BR112013031160A2 - dispositivo de conversão de infravermelho para visível transparente - Google Patents

dispositivo de conversão de infravermelho para visível transparente

Info

Publication number
BR112013031160A2
BR112013031160A2 BR112013031160A BR112013031160A BR112013031160A2 BR 112013031160 A2 BR112013031160 A2 BR 112013031160A2 BR 112013031160 A BR112013031160 A BR 112013031160A BR 112013031160 A BR112013031160 A BR 112013031160A BR 112013031160 A2 BR112013031160 A2 BR 112013031160A2
Authority
BR
Brazil
Prior art keywords
conversion device
layer
transparent
visible
transparent infrared
Prior art date
Application number
BR112013031160A
Other languages
English (en)
Inventor
K Pradhan Bhabendra
Young Kim Do
So Franky
Original Assignee
Nanoholdings Llc
Univ Florida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoholdings Llc, Univ Florida filed Critical Nanoholdings Llc
Publication of BR112013031160A2 publication Critical patent/BR112013031160A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

resumo patente de invenção: "dispositivo de conversão de infravermelho para visível transparente". a presente invenção refere-se a um dispositivo de conversão transparente com dois elétrodos transparentes. nas modalidades da invenção, o dispositivo de conversão compreende uma pilha de camadas, que procedem de um substrato transparente incluindo um anódio, uma camada bloqueadora de abertura, uma camada sensível a iv, uma camada de transporte de abertura, uma camada emissora de luz, uma camada transportadora de elétrons, um catódio, e uma camada antirrefletora. em uma modalidade da invenção, o dispositivo de conversão inclui uma camada de bloqueio de passagem de iv visível. 19922479v1 1/1 19922479v1
BR112013031160A 2011-06-06 2012-06-06 dispositivo de conversão de infravermelho para visível transparente BR112013031160A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161493696P 2011-06-06 2011-06-06
PCT/US2012/040981 WO2012170457A2 (en) 2011-06-06 2012-06-06 Transparent infrared-to-visible up-conversion device

Publications (1)

Publication Number Publication Date
BR112013031160A2 true BR112013031160A2 (pt) 2017-02-07

Family

ID=47296704

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013031160A BR112013031160A2 (pt) 2011-06-06 2012-06-06 dispositivo de conversão de infravermelho para visível transparente

Country Status (12)

Country Link
US (1) US9437835B2 (pt)
EP (1) EP2718991A4 (pt)
JP (1) JP2014529090A (pt)
KR (1) KR20140048193A (pt)
CN (1) CN103597624A (pt)
AU (1) AU2012268323A1 (pt)
BR (1) BR112013031160A2 (pt)
CA (1) CA2837742A1 (pt)
MX (1) MX2013014316A (pt)
RU (1) RU2013158845A (pt)
SG (1) SG194905A1 (pt)
WO (1) WO2012170457A2 (pt)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG175565A1 (en) 2006-09-29 2011-11-28 Univ Florida Method and apparatus for infrared detection and display
CN102906886B (zh) 2010-05-24 2016-11-23 佛罗里达大学研究基金会公司 用于在红外上转换装置上提供电荷阻挡层的方法和设备
EP2728636A4 (en) * 2011-06-30 2015-05-06 Oceans King Lighting Science FLEXIBLE ORGANIC ELECTROLUMINESCENT DIODE DEVICE EMITTING UP THEREOF AND PREPARATION METHOD THEREOF
JP2014519162A (ja) * 2011-06-30 2014-08-07 オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド トップエミッション型の有機エレクトロルミネッセンスダイオード及びその製造方法
AU2012275060A1 (en) 2011-06-30 2014-01-30 Nanoholdings, Llc A method and apparatus for detecting infrared radiation with gain
WO2014178923A2 (en) * 2013-01-25 2014-11-06 University Of Florida Research Foundation, Inc. A novel ir image sensor using a solution processed pbs photodetector
CN103971629A (zh) * 2013-01-25 2014-08-06 胜华科技股份有限公司 有机电致发光显示器
KR102149937B1 (ko) * 2013-02-22 2020-09-01 삼성전자주식회사 광전 소자 및 이미지 센서
CN104576968A (zh) * 2015-02-10 2015-04-29 京东方科技集团股份有限公司 一种oled器件及其制备方法、显示基板和显示装置
CN107636431A (zh) 2015-06-11 2018-01-26 佛罗里达大学研究基金会有限公司 单分散ir 吸收纳米颗粒以及相关方法和装置
CN105261713B (zh) * 2015-11-03 2017-09-29 云南大学 一种能实现近红外到可见光转换的光上转换器件及其制备方法
KR102650330B1 (ko) * 2016-08-24 2024-03-21 엘지디스플레이 주식회사 유기 발광 표시 장치
CN106876435B (zh) * 2017-03-03 2020-03-06 京东方科技集团股份有限公司 一种发光器件、显示装置及发光器件的制造方法
JP7245611B2 (ja) * 2017-07-04 2023-03-24 三星電子株式会社 近赤外線有機光センサが組み込まれた有機発光ダイオードパネル及びこれを含む表示装置
CN109309102A (zh) * 2017-07-26 2019-02-05 Tcl集团股份有限公司 光转换的器件及其制备方法、红外成像设备
CN110197860B (zh) * 2019-05-29 2021-05-28 深圳扑浪创新科技有限公司 一种上转换光发射光电晶体管及其制备方法和用途

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885211A (en) * 1987-02-11 1989-12-05 Eastman Kodak Company Electroluminescent device with improved cathode
JP2002502128A (ja) * 1998-02-02 2002-01-22 ユニアックス コーポレイション Ｘ−ｙアドレス指定可能な電気的マイクロスイッチアレイとこれを使用したセンサマトリックス
JP2003083809A (ja) * 2001-09-10 2003-03-19 Hamamatsu Photonics Kk 赤外可視変換部材及び赤外線検出装置。
CN1498049A (zh) * 2002-10-09 2004-05-19 伊斯曼柯达公司 具有改善电压稳定性的级联有机电致发光器件
JP2005266537A (ja) * 2004-03-19 2005-09-29 Stanley Electric Co Ltd 赤外線透過フィルタ及び該赤外線透過フィルタを具備する赤外線投光器
US7300731B2 (en) * 2004-08-10 2007-11-27 E.I. Du Pont De Nemours And Company Spatially-doped charge transport layers
JP2006259124A (ja) * 2005-03-16 2006-09-28 Kawai Optical Co Ltd コールドミラー
US20060246315A1 (en) * 2005-04-27 2006-11-02 Begley William J Phosphorescent oled with mixed electron transport materials
CN100424897C (zh) 2005-09-28 2008-10-08 中国科学院上海技术物理研究所 氮化镓基红外-可见波长转换探测器
US7440157B2 (en) * 2006-03-02 2008-10-21 Fury Technologies Corporation Optically addressed spatial light modulator and method
CN102257651B (zh) * 2008-12-19 2014-11-19 皇家飞利浦电子股份有限公司 透明有机发光二极管
JP2010182633A (ja) * 2009-02-09 2010-08-19 Seiko Epson Corp 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法および電子機器
DE102009018647A1 (de) * 2009-04-23 2010-10-28 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
US8796699B2 (en) 2009-11-24 2014-08-05 University Of Florida Research Foundation, Inc. Method and apparatus for sensing infrared radiation
CN102906886B (zh) * 2010-05-24 2016-11-23 佛罗里达大学研究基金会公司 用于在红外上转换装置上提供电荷阻挡层的方法和设备

Also Published As

Publication number Publication date
RU2013158845A (ru) 2015-07-20
SG194905A1 (en) 2013-12-30
WO2012170457A2 (en) 2012-12-13
KR20140048193A (ko) 2014-04-23
EP2718991A2 (en) 2014-04-16
CN103597624A (zh) 2014-02-19
JP2014529090A (ja) 2014-10-30
US20140175410A1 (en) 2014-06-26
WO2012170457A3 (en) 2013-03-07
CA2837742A1 (en) 2012-12-13
EP2718991A4 (en) 2015-05-13
AU2012268323A1 (en) 2014-01-16
US9437835B2 (en) 2016-09-06
MX2013014316A (es) 2014-01-23

Similar Documents

Publication Publication Date Title
BR112013031160A2 (pt) dispositivo de conversão de infravermelho para visível transparente
WO2014030872A3 (ko) 유기광전자소자 및 이를 포함하는 표시장치
BR112014017440A8 (pt) vidraça com revestimento de reflexão de radiação térmica
BR112013031013A2 (pt) dispositivo para formação de imagem em infravermelho integrando um dispositivo de conversão ascendente em ir com um sensor de imagem cmos
JP2013020986A5 (pt)
JP2012156148A5 (pt)
WO2014014300A3 (ko) 반도체 발광소자
CL2013000423A1 (es) Forma de dosificacion farmaceutica con resistencia a rompimiento de al menos 500 n, que contiene un ingrediente activo, un polisacarido anionico y un oxido de polialquileno, en donde el ingrediente activo esta presente en una matriz de liberacion controlada comprendiendo el polisacarido anionico y el oxido de polialquileno.
BR112016004476A2 (pt) estrutura de substrato, emissor de luz, dispositivo de exibição, célula de bateria solar e método para a preparação da estrutura de substrato)
BR112015001743A2 (pt) encapsulamento de implante
EP2365546A3 (en) Light emitting device and light emitting device package
JP2012033510A5 (ja) 発光装置
CR20140487A (es) Peliculas de capas multiples capaces de liberar ingredientes activos por un periodo limitado de tiempo
BR112012012249A2 (pt) método e aparelho para percepção de radiação infravermelha
BR112012029738A2 (pt) método e aparelho para fornecer uma camada de bloqueio de carga em um dispositivo de conversão ascendente de infravermelho
JP2012124175A5 (pt)
WO2014020899A3 (en) Display unit with moisture proof sealing
JP2012253013A5 (ja) 発光素子
EP2657994A3 (en) Semiconductor light emitting device
BR112013021833A2 (pt) dispositivo fotodetector e de conversão com ganho (ec)
EA201390427A1 (ru) Стеклянная панель в качестве приборной панели на оконном стекле
JP2011009729A5 (ja) 発光素子
EP2634829A3 (en) Organic light-emitting display device
EP2473002A3 (en) Illumination device
BR112014033108A2 (pt) eletrodo transparente para componentes optoeletrônicos

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]