BR112013031013A2 - dispositivo para formação de imagem em infravermelho integrando um dispositivo de conversão ascendente em ir com um sensor de imagem cmos - Google Patents

dispositivo para formação de imagem em infravermelho integrando um dispositivo de conversão ascendente em ir com um sensor de imagem cmos

Info

Publication number
BR112013031013A2
BR112013031013A2 BR112013031013A BR112013031013A BR112013031013A2 BR 112013031013 A2 BR112013031013 A2 BR 112013031013A2 BR 112013031013 A BR112013031013 A BR 112013031013A BR 112013031013 A BR112013031013 A BR 112013031013A BR 112013031013 A2 BR112013031013 A2 BR 112013031013A2
Authority
BR
Brazil
Prior art keywords
image sensor
multilayer stack
transparent
infrared imaging
cmos image
Prior art date
Application number
BR112013031013A
Other languages
English (en)
Inventor
Bhabendra K Pradhan
Do Young Kim
Franky So
Original Assignee
Nanoholdings Llc
Univ Florida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoholdings Llc, Univ Florida filed Critical Nanoholdings Llc
Publication of BR112013031013A2 publication Critical patent/BR112013031013A2/pt

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/58—Photometry, e.g. photographic exposure meter using luminescence generated by light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

resumo patente de invenção: "dispositivo para formação de imagem em infravermelho integrando um dispositivo de conversão ascendente em ir com um sensor de imagem cmos". a presente invenção refere-se aos dispositivos de formação de imagem incluem um dispositivo de conversão ascendente de ir em um sensor de imagem de cmos (cis) onde o dispositivo de conversão ascendente compreende uma pilha de múltiplas camadas transparente. a pilha de múltiplas camadas inclui uma camada de sensibilização de ir e uma camada emissora de luz situadas entre um anodo transparente e um catodo transparente. em modalidades da invenção, a pilha de múltiplas camadas é formada sobre um suporte transparente que é acoplado ao cis por um fixador mecânico ou um adesivo ou por laminação. em uma outra modalidade da invenção, o cis funciona como um substrato de suporte para formação da pilha de múltiplas camadas.
BR112013031013A 2011-06-06 2012-06-06 dispositivo para formação de imagem em infravermelho integrando um dispositivo de conversão ascendente em ir com um sensor de imagem cmos BR112013031013A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161493691P 2011-06-06 2011-06-06
PCT/US2012/040980 WO2012170456A2 (en) 2011-06-06 2012-06-06 Infrared imaging device integrating an ir up-conversion device with a cmos image sensor

Publications (1)

Publication Number Publication Date
BR112013031013A2 true BR112013031013A2 (pt) 2016-11-29

Family

ID=47296703

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013031013A BR112013031013A2 (pt) 2011-06-06 2012-06-06 dispositivo para formação de imagem em infravermelho integrando um dispositivo de conversão ascendente em ir com um sensor de imagem cmos

Country Status (12)

Country Link
US (1) US20140111652A1 (pt)
EP (1) EP2718974B1 (pt)
JP (1) JP6309449B2 (pt)
KR (1) KR102031996B1 (pt)
CN (1) CN103765588B (pt)
AU (1) AU2012268322A1 (pt)
BR (1) BR112013031013A2 (pt)
CA (1) CA2837739A1 (pt)
MX (1) MX2013014311A (pt)
RU (1) RU2013158842A (pt)
SG (1) SG194906A1 (pt)
WO (1) WO2012170456A2 (pt)

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WO2017039774A2 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
CN105098095B (zh) * 2015-07-27 2017-05-31 京东方科技集团股份有限公司 一种有机发光二极管器件及其制作方法、显示装置
US10483325B2 (en) * 2015-09-11 2019-11-19 University Of Florida Research Foundation, Incorporated Light emitting phototransistor
JP2018534760A (ja) 2015-09-11 2018-11-22 ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. 縦型電界効果トランジスタ
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Also Published As

Publication number Publication date
KR102031996B1 (ko) 2019-10-14
SG194906A1 (en) 2013-12-30
EP2718974A2 (en) 2014-04-16
MX2013014311A (es) 2014-01-23
JP2014522578A (ja) 2014-09-04
CA2837739A1 (en) 2012-12-13
JP6309449B2 (ja) 2018-04-11
EP2718974B1 (en) 2019-10-09
WO2012170456A3 (en) 2013-04-25
EP2718974A4 (en) 2015-05-20
RU2013158842A (ru) 2015-07-20
US20140111652A1 (en) 2014-04-24
CN103765588B (zh) 2016-08-24
KR20140053943A (ko) 2014-05-08
AU2012268322A1 (en) 2014-01-16
WO2012170456A2 (en) 2012-12-13
CN103765588A (zh) 2014-04-30

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]