ATE557425T1 - Verfahren zum trennen von materialschichten - Google Patents

Verfahren zum trennen von materialschichten

Info

Publication number
ATE557425T1
ATE557425T1 AT05731585T AT05731585T ATE557425T1 AT E557425 T1 ATE557425 T1 AT E557425T1 AT 05731585 T AT05731585 T AT 05731585T AT 05731585 T AT05731585 T AT 05731585T AT E557425 T1 ATE557425 T1 AT E557425T1
Authority
AT
Austria
Prior art keywords
material layers
separating material
substrate
layer
sections
Prior art date
Application number
AT05731585T
Other languages
English (en)
Inventor
Jongkook Park
Jeffrey Sercel
Patrick Sercel
Original Assignee
Jp Sercel Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jp Sercel Associates Inc filed Critical Jp Sercel Associates Inc
Application granted granted Critical
Publication of ATE557425T1 publication Critical patent/ATE557425T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT05731585T 2004-03-29 2005-03-29 Verfahren zum trennen von materialschichten ATE557425T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US55745004P 2004-03-29 2004-03-29
US11/008,589 US7202141B2 (en) 2004-03-29 2004-12-09 Method of separating layers of material
PCT/US2005/010412 WO2005094320A2 (en) 2004-03-29 2005-03-29 Method of separating layers of material using a laser beam

Publications (1)

Publication Number Publication Date
ATE557425T1 true ATE557425T1 (de) 2012-05-15

Family

ID=35061103

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05731585T ATE557425T1 (de) 2004-03-29 2005-03-29 Verfahren zum trennen von materialschichten

Country Status (8)

Country Link
US (3) US7202141B2 (de)
EP (1) EP1735837B1 (de)
JP (1) JP5053076B2 (de)
KR (1) KR100849779B1 (de)
CN (1) CN1973375B (de)
AT (1) ATE557425T1 (de)
TW (1) TWI278923B (de)
WO (1) WO2005094320A2 (de)

Families Citing this family (152)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
US8319150B2 (en) * 2004-07-09 2012-11-27 General Electric Company Continuous motion laser shock peening
US7238589B2 (en) * 2004-11-01 2007-07-03 International Business Machines Corporation In-place bonding of microstructures
US20060124941A1 (en) * 2004-12-13 2006-06-15 Lee Jae S Thin gallium nitride light emitting diode device
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
KR100638732B1 (ko) * 2005-04-15 2006-10-30 삼성전기주식회사 수직구조 질화물 반도체 발광소자의 제조방법
TWI248222B (en) * 2005-05-12 2006-01-21 Univ Nat Central Light emitting diode and manufacturing method thereof
US8614449B1 (en) * 2005-10-11 2013-12-24 SemiLEDs Optoelectronics Co., Ltd. Protection for the epitaxial structure of metal devices
US20070093037A1 (en) * 2005-10-26 2007-04-26 Velox Semicondutor Corporation Vertical structure semiconductor devices and method of fabricating the same
US7471455B2 (en) * 2005-10-28 2008-12-30 Cymer, Inc. Systems and methods for generating laser light shaped as a line beam
JP2007184426A (ja) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd 半導体装置の製造方法
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
US8624157B2 (en) * 2006-05-25 2014-01-07 Electro Scientific Industries, Inc. Ultrashort laser pulse wafer scribing
WO2007148866A1 (en) * 2006-06-23 2007-12-27 Lg Electronics Inc. Light emitting diode having vertical topology and method of making the same
TWI298513B (en) * 2006-07-03 2008-07-01 Au Optronics Corp Method for forming an array substrate
US20080042149A1 (en) * 2006-08-21 2008-02-21 Samsung Electro-Mechanics Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same
US20080054291A1 (en) * 2006-08-31 2008-03-06 Samsung Electronics Co., Ltd. Vertical semiconductor light-emitting device and method of manufacturing the same
US20080070378A1 (en) * 2006-09-19 2008-03-20 Jong-Souk Yeo Dual laser separation of bonded wafers
KR101615255B1 (ko) * 2006-09-20 2016-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
US8921204B2 (en) 2006-10-11 2014-12-30 SemiLEDs Optoelectronics Co., Ltd. Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses
US7508494B2 (en) * 2006-12-22 2009-03-24 Asml Netherlands B.V. Lithographic apparatus and a subtrate table for exciting a shockwave in a substrate
US7727790B2 (en) * 2007-01-30 2010-06-01 Goldeneye, Inc. Method for fabricating light emitting diodes
US20080220590A1 (en) * 2007-03-06 2008-09-11 Texas Instruments Incorporated Thin wafer dicing using UV laser
KR101364719B1 (ko) * 2007-03-29 2014-02-20 서울바이오시스 주식회사 수직형 발광 다이오드 제조방법
US8163582B2 (en) * 2007-04-23 2012-04-24 Goldeneye, Inc. Method for fabricating a light emitting diode chip including etching by a laser beam
US20080280454A1 (en) * 2007-05-09 2008-11-13 Ya-Li Chen Wafer recycling method using laser films stripping
CN101086083B (zh) * 2007-06-08 2011-05-11 中国科学院苏州纳米技术与纳米仿生研究所 一种制备三族氮化物衬底的方法
US20090140279A1 (en) * 2007-12-03 2009-06-04 Goldeneye, Inc. Substrate-free light emitting diode chip
SG153673A1 (en) * 2007-12-10 2009-07-29 Tinggi Tech Private Ltd Fabrication of semiconductor devices
TWI384658B (zh) * 2008-05-08 2013-02-01 High Power Optoelectronics Inc Laser stripping method
EP2281301A2 (de) 2008-05-30 2011-02-09 Alta Devices, Inc. Epitaxiale ablösestapel und verfahren
CN102084460A (zh) * 2008-05-30 2011-06-01 奥塔装置公司 用于化学气相沉积反应器的方法和设备
CN101599418B (zh) * 2008-06-02 2011-11-30 联胜光电股份有限公司 激光剥离方法
US7754511B2 (en) * 2008-07-08 2010-07-13 High Power Opto. Inc. Laser lift-off method
US7955951B2 (en) * 2008-07-08 2011-06-07 High Power Opto, Inc. LED-laser lift-off method
KR20100008656A (ko) * 2008-07-16 2010-01-26 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 제조 방법에의해 제조된 발광 소자 및 발광 장치
JP2010045117A (ja) * 2008-08-11 2010-02-25 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
JP2010045151A (ja) 2008-08-12 2010-02-25 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
CN102246273A (zh) * 2008-10-10 2011-11-16 奥塔装置公司 连续进给式化学气相沉积
CN102177572A (zh) * 2008-10-10 2011-09-07 奥塔装置公司 用于外延剥离的台面蚀刻方法和组成
KR101018179B1 (ko) * 2008-10-16 2011-02-28 삼성엘이디 주식회사 Ⅲ족 질화물 반도체 기판의 패턴 형성 방법 및 ⅲ족 질화물반도체 발광소자의 제조 방법
CN101740331B (zh) * 2008-11-07 2012-01-25 东莞市中镓半导体科技有限公司 利用固体激光器无损剥离GaN与蓝宝石衬底的方法
KR101025980B1 (ko) 2008-11-28 2011-03-30 삼성엘이디 주식회사 질화물계 반도체 발광소자의 제조방법
KR20110099029A (ko) * 2008-12-08 2011-09-05 알타 디바이씨즈, 인크. 에피택셜 리프트 오프를 위한 다중 스택 증착
WO2010078022A2 (en) * 2008-12-17 2010-07-08 Alta Devices, Inc. Tape-based epitaxial lift off apparatuses and methods
US8581263B2 (en) * 2008-12-17 2013-11-12 Palo Alto Research Center Incorporated Laser-induced flaw formation in nitride semiconductors
CN102414837B (zh) 2009-02-27 2016-04-20 奥塔装置公司 用于沉积和外延剥离过程的平铺衬底
KR101040012B1 (ko) * 2009-03-16 2011-06-08 엘지이노텍 주식회사 반도체 소자 제조방법
US8609512B2 (en) * 2009-03-27 2013-12-17 Electro Scientific Industries, Inc. Method for laser singulation of chip scale packages on glass substrates
CN101879657B (zh) * 2009-05-08 2016-06-29 东莞市中镓半导体科技有限公司 固体激光剥离设备和剥离方法
US8133803B2 (en) * 2009-06-23 2012-03-13 Academia Sinica Method for fabricating semiconductor substrates and semiconductor devices
JP4686625B2 (ja) 2009-08-03 2011-05-25 株式会社東芝 半導体発光装置の製造方法
CN101996943B (zh) * 2009-08-18 2013-12-04 展晶科技(深圳)有限公司 材料层分离方法
CN102005517B (zh) * 2009-08-26 2013-09-18 首尔Opto仪器股份有限公司 利用激光剥离技术制造发光二极管的方法和激光剥离装置
JP5534763B2 (ja) * 2009-09-25 2014-07-02 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
US9834860B2 (en) * 2009-10-14 2017-12-05 Alta Devices, Inc. Method of high growth rate deposition for group III/V materials
US11393683B2 (en) 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer
US8382943B2 (en) * 2009-10-23 2013-02-26 William George Clark Method and apparatus for the selective separation of two layers of material using an ultrashort pulse source of electromagnetic radiation
JP5507197B2 (ja) * 2009-10-23 2014-05-28 スタンレー電気株式会社 光半導体素子、光半導体素子の製造方法及び光半導体装置の製造方法
TWI381558B (zh) * 2009-10-27 2013-01-01 High Power Optoelectronics Inc Method of laser emitting peeling of light emitting diodes
CN102054767B (zh) * 2009-11-03 2013-02-13 联胜光电股份有限公司 发光二极管激光剥离的方法
US9669613B2 (en) 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
US8986497B2 (en) 2009-12-07 2015-03-24 Ipg Photonics Corporation Laser lift off systems and methods
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
JP5547212B2 (ja) * 2009-12-11 2014-07-09 シャープ株式会社 半導体装置の製造方法
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
DE102010009015A1 (de) * 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
JP5612336B2 (ja) * 2010-03-08 2014-10-22 スタンレー電気株式会社 半導体発光素子の製造方法
JP5185308B2 (ja) 2010-03-09 2013-04-17 株式会社東芝 半導体発光装置の製造方法
JP5174064B2 (ja) * 2010-03-09 2013-04-03 株式会社東芝 半導体発光装置および半導体発光装置の製造方法
DE102010018032A1 (de) * 2010-04-23 2011-10-27 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Bearbeitung eines Werkstückes mit einem Laser
SG185547A1 (en) 2010-05-18 2012-12-28 Agency Science Tech & Res Method of forming a light emitting diode structure and a light emitting diode structure
JP2012015150A (ja) * 2010-06-29 2012-01-19 Ushio Inc レーザリフトオフ方法及びレーザリフトオフ装置
JP5747454B2 (ja) * 2010-07-08 2015-07-15 ウシオ電機株式会社 レーザリフト方法およびレーザリフト装置
JP4948629B2 (ja) * 2010-07-20 2012-06-06 ウシオ電機株式会社 レーザリフトオフ方法
JP5653110B2 (ja) * 2010-07-26 2015-01-14 浜松ホトニクス株式会社 チップの製造方法
JP4661989B1 (ja) * 2010-08-04 2011-03-30 ウシオ電機株式会社 レーザリフトオフ装置
CN102376826B (zh) * 2010-08-06 2014-08-06 晶元光电股份有限公司 半导体光电元件及其制作方法
FR2963985A1 (fr) * 2010-08-18 2012-02-24 St Microelectronics Tours Sas Diode schottky verticale au nitrure de gallium
KR101172791B1 (ko) 2010-08-23 2012-08-09 주식회사 엘티에스 레이저 리프트오프 방법 및 레이저 리프트오프 장치
WO2012046478A1 (ja) * 2010-10-06 2012-04-12 ウシオ電機株式会社 レーザリフトオフ方法及びレーザリフトオフ装置
JP2012089709A (ja) * 2010-10-20 2012-05-10 Disco Abrasive Syst Ltd ワークの分割方法
US8154034B1 (en) 2010-11-23 2012-04-10 Invenlux Limited Method for fabricating vertical light emitting devices and substrate assembly for the same
JP5752933B2 (ja) * 2010-12-17 2015-07-22 株式会社ディスコ 光デバイスウエーハの加工方法
JP5878292B2 (ja) * 2010-12-24 2016-03-08 株式会社ディスコ 光デバイスウエーハの加工方法
JP5712700B2 (ja) * 2011-03-14 2015-05-07 ウシオ電機株式会社 レーザリフトオフ装置
JP5240318B2 (ja) * 2011-04-28 2013-07-17 ウシオ電機株式会社 レーザリフトオフ方法
WO2012164005A1 (en) * 2011-05-31 2012-12-06 Kewar Holdings S.A. Method and apparatus for fabricating free-standing group iii nitride crystals
RU2469433C1 (ru) 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
CN102956762A (zh) * 2011-08-26 2013-03-06 郑朝元 Ⅲ-ⅴ族晶圆可重复进行磊晶制程的方法与构造
CN103959465B (zh) * 2011-10-06 2019-06-07 新加坡恒立私人有限公司 用于物体的晶片级制造的方法以及相应的中间产品
JP5878330B2 (ja) * 2011-10-18 2016-03-08 株式会社ディスコ レーザー光線の出力設定方法およびレーザー加工装置
WO2013058222A1 (ja) * 2011-10-18 2013-04-25 富士電機株式会社 固相接合ウエハの支持基板の剥離方法および半導体装置の製造方法
KR101293595B1 (ko) * 2011-11-07 2013-08-13 디에이치케이솔루션(주) 웨이퍼 다이싱 방법 및 그에 의해 제조되는 소자
US8716625B2 (en) * 2012-02-03 2014-05-06 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Workpiece cutting
JP5500197B2 (ja) * 2012-03-29 2014-05-21 ウシオ電機株式会社 レーザリフトオフ方法およびレーザリフトオフ装置
US9847445B2 (en) * 2012-04-05 2017-12-19 Koninklijke Philips N.V. LED thin-film device partial singulation prior to substrate thinning or removal
JP5996250B2 (ja) * 2012-04-24 2016-09-21 株式会社ディスコ リフトオフ方法
TWI480928B (zh) * 2012-05-22 2015-04-11 Nat Univ Chung Hsing The manufacturing method of the semiconductor element and the epitaxial substrate used in the manufacturing method and the semi-finished product of the semiconductor device
US10186458B2 (en) 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
CN102800585B (zh) * 2012-07-09 2015-09-09 厦门飞德利照明科技有限公司 一种发光二极管的电铸制造方法
TWI460891B (zh) * 2012-08-17 2014-11-11 Nat Univ Chung Hsing Preparation method and product of vertical conduction type light emitting diode
JP6050075B2 (ja) * 2012-09-26 2016-12-21 株式会社オプトニクス精密 半導体デバイスの製造方法および半導体デバイス
DE102012217957B4 (de) * 2012-10-01 2014-10-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Mikro-LED-Matrix
JP6042994B2 (ja) * 2012-10-26 2016-12-14 アールエフエイチアイシー コーポレイション 信頼性および動作寿命を改善した半導体デバイスならびにその製造方法
KR101878748B1 (ko) 2012-12-20 2018-08-17 삼성전자주식회사 그래핀의 전사 방법 및 이를 이용한 소자의 제조 방법
CN103078017A (zh) * 2012-12-26 2013-05-01 光达光电设备科技（嘉兴）有限公司 Led外延结构及其制备方法
KR102077742B1 (ko) * 2013-02-27 2020-02-14 삼성전자주식회사 반도체 요소 전사 방법
DE112014002026T5 (de) 2013-04-17 2016-01-14 Panasonic Intellectual Property Management Co., Ltd. Verbundhalbleitervorrichtung, Verfahren zu ihrer Herstellung und Halbleitervorrichtung vom mit Harz versiegelten Typ
JP2015002239A (ja) * 2013-06-14 2015-01-05 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR102037259B1 (ko) * 2013-07-05 2019-10-29 삼성디스플레이 주식회사 기판 분리 장치 및 이를 이용한 기판 분리 방법
TWI610374B (zh) * 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
US9171749B2 (en) 2013-11-13 2015-10-27 Globalfoundries U.S.2 Llc Handler wafer removal facilitated by the addition of an amorphous carbon layer on the handler wafer
US9698053B2 (en) * 2013-11-25 2017-07-04 The Board Of Trustees Of The Leland Stanford Junior University Laser liftoff of epitaxial thin film structures
KR20180021926A (ko) 2013-12-02 2018-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
US9397051B2 (en) * 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry
EP3207572B1 (de) 2015-04-01 2019-06-05 Goertek. Inc Übertragungsverfahren und herstellungsverfahren einer mikro-led
DE102015006971A1 (de) 2015-04-09 2016-10-13 Siltectra Gmbh Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern
JP2017103405A (ja) * 2015-12-04 2017-06-08 株式会社ディスコ ウエーハの加工方法
JP2017103406A (ja) * 2015-12-04 2017-06-08 株式会社ディスコ ウエーハの加工方法
JP2017107921A (ja) * 2015-12-07 2017-06-15 株式会社ディスコ ウエーハの加工方法
KR102214510B1 (ko) * 2016-01-18 2021-02-09 삼성전자 주식회사 기판 씨닝 장치, 이를 이용한 기판의 씨닝 방법, 및 반도체 패키지의 제조 방법
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
JP2018042208A (ja) * 2016-09-09 2018-03-15 株式会社ディスコ 表面弾性波デバイスチップの製造方法
JP6508153B2 (ja) * 2016-09-21 2019-05-08 日亜化学工業株式会社 発光素子の製造方法
CN106328728B (zh) * 2016-10-15 2017-08-04 凯盛光伏材料有限公司 一种铜铟镓硒薄膜发电玻璃激光刻划方法
CN106654814A (zh) * 2017-03-09 2017-05-10 中国科学院合肥物质科学研究院 可用于晶化和剥离的两用准分子激光系统
JP6980421B2 (ja) * 2017-06-16 2021-12-15 株式会社ディスコ ウエーハの加工方法
EP3417982A1 (de) * 2017-06-21 2018-12-26 Heraeus Deutschland GmbH & Co. KG Laserschneiden von metall-keramik-substraten
CN107414289B (zh) * 2017-07-27 2019-05-17 京东方科技集团股份有限公司 一种激光剥离方法及激光剥离系统
JP6579397B2 (ja) 2017-08-30 2019-09-25 日亜化学工業株式会社 発光素子の製造方法
GB2572608A (en) 2018-04-03 2019-10-09 Ilika Tech Ltd Laser processing method for thin film structures
JP7258414B2 (ja) * 2018-08-28 2023-04-17 株式会社ディスコ 光デバイスウェーハの加工方法
CN110875355A (zh) * 2018-08-30 2020-03-10 上海和辉光电有限公司 一种柔性显示母板、柔性显示面板及其应用
US11819806B1 (en) 2018-10-15 2023-11-21 Ampcera Inc. Methods for manufacturing a solid state ionic conductive membrane on a macro porous support scaffold
US11177498B1 (en) 2018-10-15 2021-11-16 Ampcera Inc. Redox flow batteries, components for redox flow batteries and methods for manufacture thereof
CN111326409B (zh) * 2018-12-14 2023-01-31 云谷（固安）科技有限公司 激光剥离方法和蓝宝石衬底上发光二极管器件外延结构
CN111318810B (zh) * 2018-12-14 2021-08-24 成都辰显光电有限公司 一种激光剥离方法
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
CN109746568A (zh) * 2019-01-30 2019-05-14 大族激光科技产业集团股份有限公司 一种激光加工系统及激光加工方法
KR102167268B1 (ko) * 2019-02-11 2020-10-19 (주)에스티아이 불량 led 제거 장치
US11600853B1 (en) 2019-05-14 2023-03-07 Ampcera Inc. Systems and methods for storing, transporting, and handling of solid-state electrolytes
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US20210066547A1 (en) 2019-08-28 2021-03-04 Tslc Corporation Semiconductor Components And Semiconductor Structures And Methods Of Fabrication
TWI783233B (zh) * 2020-06-08 2022-11-11 勤友光電股份有限公司 用於分離工件的雷射剝離方法
CN114833460A (zh) * 2021-01-14 2022-08-02 大族激光科技产业集团股份有限公司 刚玉加工方法
JP7117472B1 (ja) 2021-04-30 2022-08-12 信越エンジニアリング株式会社 転写装置及び転写方法
TWI825955B (zh) * 2022-08-29 2023-12-11 錼創顯示科技股份有限公司 修整微型電子元件的方法與裝置

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808550A (en) 1969-12-15 1974-04-30 Bell Telephone Labor Inc Apparatuses for trapping and accelerating neutral particles
US3959045A (en) 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
US4345967A (en) 1980-03-04 1982-08-24 Cook Melvin S Method of producing thin single-crystal sheets
US4396456A (en) 1981-12-21 1983-08-02 Cook Melvin S Method of peeling epilayers
US4448636A (en) 1982-06-02 1984-05-15 Texas Instruments Incorporated Laser assisted lift-off
DE3508469A1 (de) 1985-03-09 1986-09-11 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zum strukturieren von auf einem transparenten substrat aufgebrachten schichtfolgen
JPS62171167A (ja) 1986-01-23 1987-07-28 Mitsubishi Electric Corp 太陽電池の製造方法
US4883561A (en) 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
US4846931A (en) 1988-03-29 1989-07-11 Bell Communications Research, Inc. Method for lifting-off epitaxial films
JP3026087B2 (ja) 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
DE3927090A1 (de) * 1989-08-17 1991-02-21 Freudenberg Carl Fa Faerbbare polyester-bmc-masse
US5151389A (en) * 1990-09-10 1992-09-29 Rockwell International Corporation Method for dicing semiconductor substrates using an excimer laser beam
JP2593960B2 (ja) 1990-11-29 1997-03-26 シャープ株式会社 化合物半導体発光素子とその製造方法
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5262347A (en) 1991-08-14 1993-11-16 Bell Communications Research, Inc. Palladium welding of a semiconductor body
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP2666228B2 (ja) 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
US5827751A (en) 1991-12-06 1998-10-27 Picogiga Societe Anonyme Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically
US5171712A (en) 1991-12-20 1992-12-15 Vlsi Technology, Inc. Method of constructing termination electrodes on yielded semiconductor die by visibly aligning the die pads through a transparent substrate
JPH05235312A (ja) 1992-02-19 1993-09-10 Fujitsu Ltd 半導体基板及びその製造方法
US5286335A (en) 1992-04-08 1994-02-15 Georgia Tech Research Corporation Processes for lift-off and deposition of thin film materials
US5401983A (en) 1992-04-08 1995-03-28 Georgia Tech Research Corporation Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices
US5465009A (en) 1992-04-08 1995-11-07 Georgia Tech Research Corporation Processes and apparatus for lift-off and bonding of materials and devices
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5552345A (en) 1993-09-22 1996-09-03 Harris Corporation Die separation method for silicon on diamond circuit structures
US5479222A (en) * 1993-11-15 1995-12-26 Volk; Donald A. Indirect ophthalmoscopy lens system and adapter lenses
US5846844A (en) 1993-11-29 1998-12-08 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor substrates using ZnO release layers
US5391257A (en) 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
FR2715501B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5454002A (en) 1994-04-28 1995-09-26 The Board Of Regents Of The University Of Oklahoma High temperature semiconductor diode laser
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5724376A (en) 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US5985687A (en) 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
JP3164016B2 (ja) 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
DE69737086T2 (de) * 1996-08-27 2007-05-16 Seiko Epson Corp. Trennverfahren, verfahren zur übertragung eines dünnfilmbauelements, und unter verwendung des übertragungsverfahrens hergestelltes flüssigkristall-anzeigebauelement
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US6210479B1 (en) 1999-02-26 2001-04-03 International Business Machines Corporation Product and process for forming a semiconductor structure on a host substrate
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6027988A (en) 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US5874147A (en) 1997-07-15 1999-02-23 International Business Machines Corporation Column III metal nitride films as phase change media for optical recording
US6013534A (en) 1997-07-25 2000-01-11 The United States Of America As Represented By The National Security Agency Method of thinning integrated circuits received in die form
US5926740A (en) 1997-10-27 1999-07-20 Micron Technology, Inc. Graded anti-reflective coating for IC lithography
US5882987A (en) 1997-08-26 1999-03-16 International Business Machines Corporation Smart-cut process for the production of thin semiconductor material films
US6033995A (en) 1997-09-16 2000-03-07 Trw Inc. Inverted layer epitaxial liftoff process
US5920764A (en) 1997-09-30 1999-07-06 International Business Machines Corporation Process for restoring rejected wafers in line for reuse as new
US5966622A (en) 1997-10-08 1999-10-12 Lucent Technologies Inc. Process for bonding crystalline substrates with different crystal lattices
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6300594B1 (en) * 1998-02-19 2001-10-09 Ricoh Microelectronics Company, Ltd. Method and apparatus for machining an electrically conductive film
US6113685A (en) 1998-09-14 2000-09-05 Hewlett-Packard Company Method for relieving stress in GaN devices
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6744800B1 (en) 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US6172325B1 (en) 1999-02-10 2001-01-09 Electro Scientific Industries, Inc. Laser processing power output stabilization apparatus and method employing processing position feedback
US6036809A (en) 1999-02-16 2000-03-14 International Business Machines Corporation Process for releasing a thin-film structure from a substrate
US6548386B1 (en) 1999-05-17 2003-04-15 Denso Corporation Method for forming and patterning film
US6214733B1 (en) 1999-11-17 2001-04-10 Elo Technologies, Inc. Process for lift off and handling of thin film materials
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6335263B1 (en) 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
US6425971B1 (en) * 2000-05-10 2002-07-30 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
US6746889B1 (en) 2001-03-27 2004-06-08 Emcore Corporation Optoelectronic device with improved light extraction
US6417019B1 (en) 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
WO2003010825A1 (en) 2001-07-24 2003-02-06 Seiko Epson Corporation Transfer method, method of manufacturing thin film element, method of manufacturing integrated circuit, circuit substrate and method of manufacturing the circuit substrate, electro-optic device and method of manufacturing the electro-optic device, and ic card and electronic equipmen
JP2003168820A (ja) * 2001-12-03 2003-06-13 Sony Corp 剥離方法、レーザー光の照射方法及びこれらを用いた素子の製造方法
US6617261B2 (en) * 2001-12-18 2003-09-09 Xerox Corporation Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
DE10203795B4 (de) 2002-01-31 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterbauelements
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
US6960813B2 (en) * 2002-06-10 2005-11-01 New Wave Research Method and apparatus for cutting devices from substrates
JP2004022901A (ja) 2002-06-18 2004-01-22 Seiko Epson Corp 光インターコネクション集積回路、光インターコネクション集積回路の製造方法、電気光学装置および電子機器
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
KR100495215B1 (ko) * 2002-12-27 2005-06-14 삼성전기주식회사 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법
CN100483612C (zh) 2003-06-04 2009-04-29 刘明哲 用于制造垂直结构的复合半导体器件的方法
KR100558436B1 (ko) 2003-06-10 2006-03-10 삼성전기주식회사 질화갈륨 단결정 기판의 제조방법
US6949449B2 (en) * 2003-07-11 2005-09-27 Electro Scientific Industries, Inc. Method of forming a scribe line on a ceramic substrate
EP1664393B1 (de) * 2003-07-14 2013-11-06 Allegis Technologies, Inc. VERFAHREN ZUR Herstellung VON GALLIUMNITRID LED
WO2007136183A1 (en) 2006-05-18 2007-11-29 Phicom Corporation Method of repairing a polymer mask
WO2007148866A1 (en) 2006-06-23 2007-12-27 Lg Electronics Inc. Light emitting diode having vertical topology and method of making the same
KR20070122120A (ko) 2006-06-23 2007-12-28 엘지전자 주식회사 수직형 발광 다이오드의 제조방법
KR100724540B1 (ko) 2006-12-26 2007-06-04 (주)큐엠씨 레이저 빔 전달 시스템 및 그 방법과 레이저 리프트 오프방법

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