Classifications

• • H10P90/1916—
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
• • H10P34/40—
• • H10W10/181—

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• High Energy & Nuclear Physics (AREA)
• Toxicology (AREA)
• Health & Medical Sciences (AREA)
• Pressure Welding/Diffusion-Bonding (AREA)
• Element Separation (AREA)
• Recrystallisation Techniques (AREA)
• Electrodes Of Semiconductors (AREA)
• Plasma Technology (AREA)
• Drying Of Semiconductors (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=35708624

Family Applications (1)

Country Status (9)

Families Citing this family (27)

Family Cites Families (8)

• 2005
  • 2005-04-22 FR FR0504093A patent/FR2884966B1/fr not_active Expired - Lifetime
  • 2005-11-23 US US11/285,009 patent/US7419884B2/en active Active
• 2006
  • 2006-04-18 AT AT06743328T patent/ATE545151T1/de active
  • 2006-04-18 EP EP06743328A patent/EP1872388B1/de active Active
  • 2006-04-18 KR KR1020077021882A patent/KR100904873B1/ko active Active
  • 2006-04-18 WO PCT/EP2006/061647 patent/WO2006111533A1/en not_active Ceased
  • 2006-04-18 JP JP2008503535A patent/JP4976372B2/ja active Active
  • 2006-04-18 CN CN200680007529XA patent/CN101138071B/zh active Active
  • 2006-04-21 TW TW095114205A patent/TWI305010B/zh active

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