DE60305856D1 - Verfahren zum Schneiden von Halbleiterwafern - Google Patents

Verfahren zum Schneiden von Halbleiterwafern

Info

Publication number
DE60305856D1
DE60305856D1 DE60305856T DE60305856T DE60305856D1 DE 60305856 D1 DE60305856 D1 DE 60305856D1 DE 60305856 T DE60305856 T DE 60305856T DE 60305856 T DE60305856 T DE 60305856T DE 60305856 D1 DE60305856 D1 DE 60305856D1
Authority
DE
Germany
Prior art keywords
semiconductor wafers
cutting semiconductor
cutting
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60305856T
Other languages
English (en)
Other versions
DE60305856T2 (de
Inventor
Td Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Publication of DE60305856D1 publication Critical patent/DE60305856D1/de
Application granted granted Critical
Publication of DE60305856T2 publication Critical patent/DE60305856T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
DE60305856T 2002-12-27 2003-11-11 Verfahren zum Schneiden von Halbleiterwafern Expired - Fee Related DE60305856T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002381129 2002-12-27
JP2002381129A JP2004214359A (ja) 2002-12-27 2002-12-27 基板加工方法および基板加工装置

Publications (2)

Publication Number Publication Date
DE60305856D1 true DE60305856D1 (de) 2006-07-20
DE60305856T2 DE60305856T2 (de) 2007-03-15

Family

ID=32463650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60305856T Expired - Fee Related DE60305856T2 (de) 2002-12-27 2003-11-11 Verfahren zum Schneiden von Halbleiterwafern

Country Status (7)

Country Link
US (1) US7098118B2 (de)
EP (1) EP1433582B1 (de)
JP (1) JP2004214359A (de)
KR (1) KR100567040B1 (de)
DE (1) DE60305856T2 (de)
SG (1) SG115583A1 (de)
TW (1) TWI252561B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101862904B (zh) * 2004-03-30 2011-11-30 浜松光子学株式会社 激光加工方法及半导体芯片
JP2006073690A (ja) * 2004-09-01 2006-03-16 Disco Abrasive Syst Ltd ウエーハの分割方法
JP4854060B2 (ja) * 2004-12-24 2012-01-11 日東電工株式会社 レーザー加工用保護シートを用いたレーザー加工品の製造方法
JP2007134454A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
WO2014113508A2 (en) 2013-01-15 2014-07-24 Microfabrica Inc. Methods of forming parts using laser machining
JP6156509B2 (ja) * 2013-10-15 2017-07-05 三菱電機株式会社 半導体素子の製造方法
JP6262006B2 (ja) * 2014-02-10 2018-01-17 株式会社ディスコ ウエーハの加工方法および加工装置
JP6521695B2 (ja) * 2015-03-27 2019-05-29 株式会社ディスコ ウエーハの加工方法
JP6740081B2 (ja) * 2016-10-20 2020-08-12 株式会社ディスコ ウエーハの加工方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355457A (en) * 1980-10-29 1982-10-26 Rca Corporation Method of forming a mesa in a semiconductor device with subsequent separation into individual devices
JPS63293939A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd 半導体集積回路装置の製造方法
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
US5543365A (en) * 1994-12-02 1996-08-06 Texas Instruments Incorporated Wafer scribe technique using laser by forming polysilicon
JP3496347B2 (ja) * 1995-07-13 2004-02-09 株式会社デンソー 半導体装置及びその製造方法
US6271102B1 (en) * 1998-02-27 2001-08-07 International Business Machines Corporation Method and system for dicing wafers, and semiconductor structures incorporating the products thereof
US6420245B1 (en) * 1999-06-08 2002-07-16 Kulicke & Soffa Investments, Inc. Method for singulating semiconductor wafers
EP1269535B1 (de) * 2000-04-04 2007-10-10 Synova S.A. Verfahren zum schneiden eines gegenstands und zur weiterverarbeitung des schnittguts sowie träger zum halten des gegenstands bzw. des schnittguts
US6804086B2 (en) * 2000-04-27 2004-10-12 Seagate Technology Llc Unitary crystalline slider with edges rounded by laser ablation
JP2002075919A (ja) 2000-08-30 2002-03-15 Sharp Corp 半導体ウエハのダイシング方法
TW504774B (en) * 2001-07-05 2002-10-01 Chipbond Technology Corp System and method of laser die-sintering and the die sintered by laser
JP2003151924A (ja) * 2001-08-28 2003-05-23 Tokyo Seimitsu Co Ltd ダイシング方法およびダイシング装置
SG139508A1 (en) * 2001-09-10 2008-02-29 Micron Technology Inc Wafer dicing device and method
US6838299B2 (en) * 2001-11-28 2005-01-04 Intel Corporation Forming defect prevention trenches in dicing streets
US7041578B2 (en) * 2003-07-02 2006-05-09 Texas Instruments Incorporated Method for reducing stress concentrations on a semiconductor wafer by surface laser treatment including the backside

Also Published As

Publication number Publication date
US7098118B2 (en) 2006-08-29
TWI252561B (en) 2006-04-01
KR100567040B1 (ko) 2006-04-04
EP1433582B1 (de) 2006-06-07
US20040126996A1 (en) 2004-07-01
TW200419717A (en) 2004-10-01
EP1433582A1 (de) 2004-06-30
DE60305856T2 (de) 2007-03-15
SG115583A1 (en) 2005-10-28
JP2004214359A (ja) 2004-07-29
KR20040060731A (ko) 2004-07-06

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee