ATE547794T1 - Wartungsarbeiten für mehrstufige datenspeicherzellen - Google Patents

Wartungsarbeiten für mehrstufige datenspeicherzellen

Info

Publication number
ATE547794T1
ATE547794T1 AT10164179T AT10164179T ATE547794T1 AT E547794 T1 ATE547794 T1 AT E547794T1 AT 10164179 T AT10164179 T AT 10164179T AT 10164179 T AT10164179 T AT 10164179T AT E547794 T1 ATE547794 T1 AT E547794T1
Authority
AT
Austria
Prior art keywords
data values
memory cells
data storage
level data
maintenance work
Prior art date
Application number
AT10164179T
Other languages
German (de)
English (en)
Inventor
Michael J Cornwell
Christopher P Dudte
Original Assignee
Apple Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apple Inc filed Critical Apple Inc
Application granted granted Critical
Publication of ATE547794T1 publication Critical patent/ATE547794T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
AT10164179T 2006-05-15 2007-05-14 Wartungsarbeiten für mehrstufige datenspeicherzellen ATE547794T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80035706P 2006-05-15 2006-05-15
US11/694,739 US7639542B2 (en) 2006-05-15 2007-03-30 Maintenance operations for multi-level data storage cells

Publications (1)

Publication Number Publication Date
ATE547794T1 true ATE547794T1 (de) 2012-03-15

Family

ID=38684942

Family Applications (2)

Application Number Title Priority Date Filing Date
AT10164179T ATE547794T1 (de) 2006-05-15 2007-05-14 Wartungsarbeiten für mehrstufige datenspeicherzellen
AT07762158T ATE475183T1 (de) 2006-05-15 2007-05-14 Wartungsarbeiten für mehrstufige datenspeicherzellen

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT07762158T ATE475183T1 (de) 2006-05-15 2007-05-14 Wartungsarbeiten für mehrstufige datenspeicherzellen

Country Status (9)

Country Link
US (3) US7639542B2 (enExample)
EP (10) EP2330597A1 (enExample)
JP (1) JP5358431B2 (enExample)
KR (16) KR101155751B1 (enExample)
CN (3) CN102768853B (enExample)
AT (2) ATE547794T1 (enExample)
DE (1) DE602007007938D1 (enExample)
ES (2) ES2392334T3 (enExample)
WO (1) WO2007134277A2 (enExample)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100877609B1 (ko) * 2007-01-29 2009-01-09 삼성전자주식회사 버퍼 메모리의 플래그 셀 어레이를 이용하여 데이터 오류 정정을 수행하는 반도체 메모리 시스템 및 그 구동 방법
US7460398B1 (en) * 2007-06-19 2008-12-02 Micron Technology, Inc. Programming a memory with varying bits per cell
US7800951B2 (en) * 2007-08-20 2010-09-21 Marvell World Trade Ltd. Threshold voltage digitizer for array of programmable threshold transistors
US7948802B2 (en) 2007-12-04 2011-05-24 Micron Technology, Inc. Sensing memory cells
US8938655B2 (en) * 2007-12-20 2015-01-20 Spansion Llc Extending flash memory data retension via rewrite refresh
KR101092823B1 (ko) * 2008-01-16 2011-12-12 후지쯔 가부시끼가이샤 반도체 기억 장치, 제어 장치, 및 제어 방법
KR101378365B1 (ko) * 2008-03-12 2014-03-28 삼성전자주식회사 하이브리드 메모리 데이터 검출 장치 및 방법
JP5057340B2 (ja) * 2008-03-31 2012-10-24 株式会社ジャパンディスプレイウェスト 光検出装置、電気光学装置及び電子機器
US7768832B2 (en) * 2008-04-07 2010-08-03 Micron Technology, Inc. Analog read and write paths in a solid state memory device
KR101407361B1 (ko) * 2008-04-14 2014-06-13 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US8365039B2 (en) * 2008-05-21 2013-01-29 Intel Corporation Adjustable read reference for non-volatile memory
US20090292971A1 (en) * 2008-05-21 2009-11-26 Chun Fung Man Data recovery techniques
US8276028B2 (en) * 2008-05-23 2012-09-25 Intel Corporation Using error information from nearby locations to recover uncorrectable data in non-volatile memory
JP2010009548A (ja) * 2008-06-30 2010-01-14 Toshiba Corp 記憶装置、制御装置、記憶システム、および記憶方法
US8406048B2 (en) * 2008-08-08 2013-03-26 Marvell World Trade Ltd. Accessing memory using fractional reference voltages
CN102187400A (zh) * 2008-10-20 2011-09-14 国立大学法人东京大学 集成电路装置
JP5422976B2 (ja) * 2008-11-19 2014-02-19 富士通株式会社 半導体記憶装置
US8645792B2 (en) * 2008-12-16 2014-02-04 Micron Technology, Inc. Memory with guard value dependent error correction
US7653779B1 (en) 2009-02-04 2010-01-26 Gene Fein Memory storage using a look-up table
US8161355B2 (en) * 2009-02-11 2012-04-17 Mosys, Inc. Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process
US8259506B1 (en) * 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8732389B2 (en) 2009-06-23 2014-05-20 Seagate Technology Llc Memory wear control
US8321727B2 (en) * 2009-06-29 2012-11-27 Sandisk Technologies Inc. System and method responsive to a rate of change of a performance parameter of a memory
US8407564B2 (en) * 2009-07-15 2013-03-26 Intel Corporation Prediction and cancellation of systematic noise sources in non-volatile memory
US20110271032A1 (en) * 2009-07-30 2011-11-03 Panasonic Corporation Access device and memory controller
US8189357B2 (en) * 2009-09-09 2012-05-29 Macronix International Co., Ltd. Memory with multiple reference cells
US9003153B2 (en) * 2010-11-08 2015-04-07 Greenliant Llc Method of storing blocks of data in a plurality of memory devices in a redundant manner, a memory controller and a memory system
US8446786B2 (en) * 2011-01-20 2013-05-21 Micron Technology, Inc. Outputting a particular data quantization from memory
CN102222099A (zh) * 2011-06-21 2011-10-19 中兴通讯股份有限公司 一种数据存储、查找方法及装置
US8713404B2 (en) * 2011-07-01 2014-04-29 Apple Inc. Controller interface providing improved data reliability
KR101824068B1 (ko) * 2011-07-28 2018-03-15 삼성전자주식회사 메모리 컨트롤러 구동방법, 및 메모리 컨트롤러를 포함하는 메모리 시스템, 메모리 카드 및 휴대용 전자장치
KR101882853B1 (ko) * 2011-12-21 2018-08-27 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
US8884679B2 (en) 2012-05-10 2014-11-11 Sandisk Technologies Inc. Apparatus and method for high voltage switches
US8910000B2 (en) * 2012-05-17 2014-12-09 Micron Technology, Inc. Program-disturb management for phase change memory
US9064575B2 (en) 2012-08-03 2015-06-23 Micron Technology, Inc. Determining whether a memory cell state is in a valley between adjacent data states
US8848453B2 (en) * 2012-08-31 2014-09-30 Micron Technology, Inc. Inferring threshold voltage distributions associated with memory cells via interpolation
US9063879B2 (en) 2012-12-13 2015-06-23 Sandisk Technologies Inc. Inspection of non-volatile memory for disturb effects
KR102089613B1 (ko) * 2013-01-02 2020-03-16 삼성전자주식회사 불 휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
US9367246B2 (en) * 2013-03-15 2016-06-14 Sandisk Technologies Inc. Performance optimization of data transfer for soft information generation
US9367391B2 (en) * 2013-03-15 2016-06-14 Micron Technology, Inc. Error correction operations in a memory device
US9324438B2 (en) 2013-08-05 2016-04-26 Jonker Llc Method of operating incrementally programmable non-volatile memory
US9342401B2 (en) 2013-09-16 2016-05-17 Sandisk Technologies Inc. Selective in-situ retouching of data in nonvolatile memory
US9570198B2 (en) * 2014-05-16 2017-02-14 SK Hynix Inc. Read disturb detection
US10552043B2 (en) * 2014-09-09 2020-02-04 Toshiba Memory Corporation Memory system
US11783898B2 (en) 2014-09-18 2023-10-10 Jonker Llc Ephemeral storage elements, circuits, and systems
US10115467B2 (en) 2014-09-30 2018-10-30 Jonker Llc One time accessible (OTA) non-volatile memory
US10061738B2 (en) 2014-09-30 2018-08-28 Jonker Llc Ephemeral peripheral device
US10839086B2 (en) 2014-09-30 2020-11-17 Jonker Llc Method of operating ephemeral peripheral device
US20160225459A1 (en) * 2015-01-30 2016-08-04 Micron Technology, Inc. Apparatuses operable in multiple power modes and methods of operating the same
US9502129B1 (en) 2015-09-10 2016-11-22 Kabushiki Kaisha Toshiba Memory system and method of controlling nonvolatile memory
US10241701B2 (en) * 2015-09-16 2019-03-26 Samsung Electronics Co., Ltd. Solid state memory system with power management mechanism and method of operation thereof
US11216323B2 (en) 2015-09-16 2022-01-04 Samsung Electronics Co., Ltd. Solid state memory system with low power error correction mechanism and method of operation thereof
KR102643916B1 (ko) * 2016-10-18 2024-03-08 삼성전자주식회사 스토리지 장치, 메모리 시스템, 및 그것의 읽기 전압 결정 방법
US9747158B1 (en) * 2017-01-13 2017-08-29 Pure Storage, Inc. Intelligent refresh of 3D NAND
FR3065826B1 (fr) * 2017-04-28 2024-03-15 Patrick Pirim Procede et dispositif associe automatises aptes a memoriser, rappeler et, de maniere non volatile des associations de messages versus labels et vice versa, avec un maximum de vraisemblance
US10354732B2 (en) * 2017-08-30 2019-07-16 Micron Technology, Inc. NAND temperature data management
US20190102105A1 (en) * 2017-09-29 2019-04-04 Burlywood, LLC Variable configuration media controller
US10446246B2 (en) * 2018-03-14 2019-10-15 Silicon Storage Technology, Inc. Method and apparatus for data refresh for analog non-volatile memory in deep learning neural network
KR102532084B1 (ko) * 2018-07-17 2023-05-15 에스케이하이닉스 주식회사 데이터 저장 장치 및 동작 방법, 이를 포함하는 스토리지 시스템
US10573390B1 (en) * 2018-11-30 2020-02-25 Samsung Electronics Co., Ltd. High-density storage system
JP2020113347A (ja) 2019-01-08 2020-07-27 キオクシア株式会社 半導体記憶装置
US10983852B2 (en) * 2019-01-30 2021-04-20 Micron Technology, Inc. Power management component for memory sub-system voltage regulation
US10742227B1 (en) 2019-02-25 2020-08-11 Intel Corporation Differential source follower with current steering devices
WO2020237637A1 (zh) * 2019-05-26 2020-12-03 华为技术有限公司 一种数据读取方法、存储控制器及电子设备
US11886987B2 (en) * 2019-06-25 2024-01-30 Arm Limited Non-volatile memory-based compact mixed-signal multiply-accumulate engine
US11923017B2 (en) * 2019-07-02 2024-03-05 Rohm Co., Ltd. Non-volatile storage device
CN110333770B (zh) 2019-07-10 2023-05-09 合肥兆芯电子有限公司 存储器管理方法、存储器存储装置及存储器控制电路单元
TWI722490B (zh) 2019-07-16 2021-03-21 大陸商合肥兆芯電子有限公司 記憶體管理方法、記憶體儲存裝置及記憶體控制電路單元
KR102678472B1 (ko) * 2019-07-17 2024-06-27 삼성전자주식회사 메모리 컨트롤러 및 이를 포함하는 저장 장치
CN110706735B (zh) * 2019-09-30 2021-09-14 中国科学院微电子研究所 一种NAND Flash存储器读阈值电压修复方法
CN112906071B (zh) * 2020-12-01 2023-07-14 深圳安捷丽新技术有限公司 一种基于页温动态冷热切换的数据保护方法和装置
JP2022146460A (ja) * 2021-03-22 2022-10-05 キオクシア株式会社 半導体回路、受信装置及びメモリシステム
KR20230096554A (ko) * 2021-12-23 2023-06-30 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법
WO2023177582A1 (en) * 2022-03-14 2023-09-21 Micron Technology, Inc. Host controlled media testing of memory
CN115527587A (zh) * 2022-10-18 2022-12-27 长江存储科技有限责任公司 存储系统及其操作方法、存储器控制器和存储器
US12468374B2 (en) * 2023-06-27 2025-11-11 Western Digital Technologies, Inc. Storage power reduction in battery-operated devices

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5570986A (en) 1978-11-24 1980-05-28 Hitachi Ltd Semiconductor intergrated circuit device
DE3341564A1 (de) 1983-11-17 1985-05-30 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Gekruemmtes flaechenbauteil, insbesondere fuer luftfahrzeuge und vorrichtung zu deren herstellung
JPS61137846A (ja) * 1984-11-21 1986-06-25 アトランテイツク・リツチフイールド・カンパニー アルコキシル化第四級アンモニウム化合物
US4831403A (en) 1985-12-27 1989-05-16 Minolta Camera Kabushiki Kaisha Automatic focus detection system
DE69034227T2 (de) 1989-04-13 2007-05-03 Sandisk Corp., Sunnyvale EEprom-System mit Blocklöschung
US5109496A (en) 1989-09-27 1992-04-28 International Business Machines Corporation Most recently used address translation system with least recently used (LRU) replacement
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5663901A (en) 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
WO1993022770A1 (en) 1992-05-01 1993-11-11 Motorola, Inc. Method and apparatus for storage of digital information
US5412601A (en) 1992-08-31 1995-05-02 Nippon Steel Corporation Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell
US5812814A (en) 1993-02-26 1998-09-22 Kabushiki Kaisha Toshiba Alternative flash EEPROM semiconductor memory system
US5424978A (en) 1993-03-15 1995-06-13 Nippon Steel Corporation Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same
US5394450A (en) 1993-04-13 1995-02-28 Waferscale Integration, Inc. Circuit for performing arithmetic operations
US7137011B1 (en) 1993-09-01 2006-11-14 Sandisk Corporation Removable mother/daughter peripheral card
JP3205658B2 (ja) 1993-12-28 2001-09-04 新日本製鐵株式会社 半導体記憶装置の読み出し方法
US5563838A (en) * 1994-02-01 1996-10-08 Micron Electronics, Inc. Module having voltage control circuit to reduce surges in potential
US5440524A (en) 1994-02-01 1995-08-08 Integrated Device Technology, Inc. Method and apparatus for simuilataneous long writes of multiple cells of a row in a static ram
US5629890A (en) 1994-09-14 1997-05-13 Information Storage Devices, Inc. Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
US5590104A (en) * 1994-09-30 1996-12-31 Martin Marietta Energy Systems, Inc. Method of pedestal and common-mode noise correction for switched-capacitor analog memories
US5838603A (en) * 1994-10-11 1998-11-17 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip
US5541886A (en) 1994-12-27 1996-07-30 Intel Corporation Method and apparatus for storing control information in multi-bit non-volatile memory arrays
US5867721A (en) 1995-02-07 1999-02-02 Intel Corporation Selecting an integrated circuit from different integrated circuit array configurations
KR100239870B1 (ko) * 1995-09-28 2000-03-02 다카노 야스아키 기억 분해능을 가변할 수 있는 불휘발성 다치 메모리 장치
US5745409A (en) 1995-09-28 1998-04-28 Invox Technology Non-volatile memory with analog and digital interface and storage
KR0157122B1 (ko) 1995-12-23 1999-02-18 김광호 디지탈 보상형 아날로그 디지탈 변환기
JPH09205615A (ja) 1996-01-25 1997-08-05 Canon Inc 記録装置
US5726934A (en) 1996-04-09 1998-03-10 Information Storage Devices, Inc. Method and apparatus for analog reading values stored in floating gate structures
US5712815A (en) 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
US5946257A (en) * 1996-07-24 1999-08-31 Micron Technology, Inc. Selective power distribution circuit for an integrated circuit
JP3709246B2 (ja) 1996-08-27 2005-10-26 株式会社日立製作所 半導体集積回路
US5754566A (en) 1996-09-06 1998-05-19 Intel Corporation Method and apparatus for correcting a multilevel cell memory by using interleaving
US6023781A (en) 1996-09-18 2000-02-08 Nippon Steel Corporation Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
JPH10124381A (ja) 1996-10-21 1998-05-15 Mitsubishi Electric Corp 半導体記憶装置
US6097638A (en) 1997-02-12 2000-08-01 Kabushiki Kaisha Toshiba Semiconductor memory device
US5828592A (en) 1997-03-12 1998-10-27 Information Storage Devices, Inc. Analog signal recording and playback integrated circuit and message management system
JP3189740B2 (ja) * 1997-06-20 2001-07-16 日本電気株式会社 不揮発性半導体メモリのデータ修復方法
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
US5909449A (en) 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
JP4074697B2 (ja) 1997-11-28 2008-04-09 株式会社ルネサステクノロジ 半導体装置
JPH11176178A (ja) * 1997-12-15 1999-07-02 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
US6072676A (en) * 1998-04-13 2000-06-06 Analog Devices, Inc. Protection circuit for an excitation current source
US6208542B1 (en) 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
EP1005213A3 (en) 1998-11-02 2000-07-05 Information Storage Devices, Inc. Multiple message multilevel analog signal recording and playback system containing configurable analog processing functions
FR2787601A1 (fr) * 1998-12-22 2000-06-23 Gemplus Card Int Systeme de memorisation comprenant des moyens de gestion d'une memoire avec anti-usure et procede de gestion anti-usure d'une memoire
US6058060A (en) 1998-12-31 2000-05-02 Invox Technology Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to noise ratio
US6134141A (en) 1998-12-31 2000-10-17 Sandisk Corporation Dynamic write process for high bandwidth multi-bit-per-cell and analog/multi-level non-volatile memories
US7139196B2 (en) * 1999-01-14 2006-11-21 Silicon Storage Technology, Inc. Sub-volt sensing for digital multilevel flash memory
TW417381B (en) 1999-04-01 2001-01-01 Mustek Systems Inc Conversion method for increasing the bits of scanning signals of scanner
JP2000298992A (ja) 1999-04-13 2000-10-24 Hitachi Ltd 多値記憶不揮発性半導体メモリの制御装置
JP2001006374A (ja) * 1999-06-17 2001-01-12 Hitachi Ltd 半導体記憶装置及びシステム
JP2001052476A (ja) 1999-08-05 2001-02-23 Mitsubishi Electric Corp 半導体装置
JP2001067884A (ja) 1999-08-31 2001-03-16 Hitachi Ltd 不揮発性半導体記憶装置
AU7313600A (en) * 1999-09-17 2001-04-24 Hitachi Limited Storage where the number of error corrections is recorded
US6166960A (en) 1999-09-24 2000-12-26 Microchip Technology, Incorporated Method, system and apparatus for determining that a programming voltage level is sufficient for reliably programming an eeprom
JP2001110184A (ja) 1999-10-14 2001-04-20 Hitachi Ltd 半導体装置
US6259627B1 (en) 2000-01-27 2001-07-10 Multi Level Memory Technology Read and write operations using constant row line voltage and variable column line load
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6297988B1 (en) * 2000-02-25 2001-10-02 Advanced Micro Devices, Inc. Mode indicator for multi-level memory
US6424569B1 (en) 2000-02-25 2002-07-23 Advanced Micro Devices, Inc. User selectable cell programming
JP2002074999A (ja) 2000-08-23 2002-03-15 Sharp Corp 不揮発性半導体記憶装置
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US6552929B1 (en) 2001-02-08 2003-04-22 Advanced Micro Devices, Inc. Piggyback programming using an extended first pulse for multi-level cell flash memory designs
US6577535B2 (en) 2001-02-16 2003-06-10 Sandisk Corporation Method and system for distributed power generation in multi-chip memory systems
US6434044B1 (en) * 2001-02-16 2002-08-13 Sandisk Corporation Method and system for generation and distribution of supply voltages in memory systems
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
US6785180B2 (en) 2001-03-15 2004-08-31 Micron Technology, Inc. Programmable soft-start control for charge pump
JP3829088B2 (ja) 2001-03-29 2006-10-04 株式会社東芝 半導体記憶装置
JP3828376B2 (ja) * 2001-05-07 2006-10-04 株式会社東芝 記憶システム
US7554842B2 (en) 2001-09-17 2009-06-30 Sandisk Corporation Multi-purpose non-volatile memory card
US6643169B2 (en) * 2001-09-18 2003-11-04 Intel Corporation Variable level memory
GB0123422D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Improved memory controller
US6678192B2 (en) 2001-11-02 2004-01-13 Sandisk Corporation Error management for writable tracking storage units
US6850441B2 (en) 2002-01-18 2005-02-01 Sandisk Corporation Noise reduction technique for transistors and small devices utilizing an episodic agitation
US6871257B2 (en) 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
JP3796457B2 (ja) * 2002-02-28 2006-07-12 富士通株式会社 不揮発性半導体記憶装置
US7031196B2 (en) * 2002-03-29 2006-04-18 Macronix International Co., Ltd. Nonvolatile semiconductor memory and operating method of the memory
US6721820B2 (en) 2002-05-15 2004-04-13 M-Systems Flash Disk Pioneers Ltd. Method for improving performance of a flash-based storage system using specialized flash controllers
US6751766B2 (en) 2002-05-20 2004-06-15 Sandisk Corporation Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
JP4086583B2 (ja) 2002-08-08 2008-05-14 シャープ株式会社 不揮発性半導体メモリ装置およびデータ書き込み制御方法
JP2004086991A (ja) 2002-08-27 2004-03-18 Renesas Technology Corp 不揮発性記憶装置
US6963505B2 (en) * 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
JP4129170B2 (ja) * 2002-12-05 2008-08-06 シャープ株式会社 半導体記憶装置及びメモリセルの記憶データ補正方法
US6735114B1 (en) * 2003-02-04 2004-05-11 Advanced Micro Devices, Inc. Method of improving dynamic reference tracking for flash memory unit
JP4550439B2 (ja) * 2003-02-28 2010-09-22 東芝メモリシステムズ株式会社 Ｅｃｃ制御装置
EP1609048A4 (en) * 2003-03-27 2009-01-14 Milsys Ltd DATA STORAGE DEVICE HAVING COMPLETE ACCESS FOR ALL USERS
JP2004310650A (ja) 2003-04-10 2004-11-04 Renesas Technology Corp メモリ装置
US7240219B2 (en) 2003-05-25 2007-07-03 Sandisk Il Ltd. Method and system for maintaining backup of portable storage devices
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7752380B2 (en) * 2003-07-31 2010-07-06 Sandisk Il Ltd SDRAM memory device with an embedded NAND flash controller
US7212067B2 (en) 2003-08-01 2007-05-01 Sandisk Corporation Voltage regulator with bypass for multi-voltage storage system
US6970395B2 (en) * 2003-09-08 2005-11-29 Infineon Technologies Ag Memory device and method of reading data from a memory device
US7019998B2 (en) 2003-09-09 2006-03-28 Silicon Storage Technology, Inc. Unified multilevel cell memory
US6937513B1 (en) 2003-10-16 2005-08-30 Lsi Logic Corporation Integrated NAND and nor-type flash memory device and method of using the same
JP2005141811A (ja) 2003-11-05 2005-06-02 Renesas Technology Corp 不揮発性メモリ
US7085152B2 (en) 2003-12-29 2006-08-01 Intel Corporation Memory system segmented power supply and control
US7389465B2 (en) 2004-01-30 2008-06-17 Micron Technology, Inc. Error detection and correction scheme for a memory device
US7164561B2 (en) 2004-02-13 2007-01-16 Sandisk Corporation Voltage regulator using protected low voltage devices
US8019928B2 (en) 2004-02-15 2011-09-13 Sandisk Il Ltd. Method of managing a multi-bit-cell flash memory
DE102005009700B4 (de) * 2004-02-26 2009-02-05 Samsung Electronics Co., Ltd., Suwon Programmierverfahren und nichtflüchtiger Speicher
US7233532B2 (en) 2004-04-30 2007-06-19 Xilinx, Inc. Reconfiguration port for dynamic reconfiguration-system monitor interface
US7109750B2 (en) 2004-04-30 2006-09-19 Xilinx, Inc. Reconfiguration port for dynamic reconfiguration-controller
US7218137B2 (en) 2004-04-30 2007-05-15 Xilinx, Inc. Reconfiguration port for dynamic reconfiguration
US7222224B2 (en) 2004-05-21 2007-05-22 Rambus Inc. System and method for improving performance in computer memory systems supporting multiple memory access latencies
CN100595923C (zh) * 2004-05-27 2010-03-24 株式会社瑞萨科技 集成半导体非易失性存储器的控制方法
US7535759B2 (en) 2004-06-04 2009-05-19 Micron Technology, Inc. Memory system with user configurable density/performance option
JPWO2005122177A1 (ja) 2004-06-09 2008-04-10 松下電器産業株式会社 半導体集積回路
JP2006031795A (ja) 2004-07-14 2006-02-02 Renesas Technology Corp 不揮発性半導体記憶装置
US7817469B2 (en) 2004-07-26 2010-10-19 Sandisk Il Ltd. Drift compensation in a flash memory
US7493457B2 (en) 2004-11-08 2009-02-17 Sandisk Il. Ltd States encoding in multi-bit flash cells for optimizing error rate
US7218570B2 (en) 2004-12-17 2007-05-15 Sandisk 3D Llc Apparatus and method for memory operations using address-dependent conditions
US7391193B2 (en) 2005-01-25 2008-06-24 Sandisk Corporation Voltage regulator with bypass mode
KR100704628B1 (ko) * 2005-03-25 2007-04-09 삼성전자주식회사 다수의 스트링을 사용하여 상태 정보를 저장하는 방법 및비휘발성 저장 장치
JP4772363B2 (ja) 2005-04-12 2011-09-14 株式会社東芝 不揮発性半導体記憶装置
WO2006129339A1 (ja) * 2005-05-30 2006-12-07 Spansion Llc 記憶装置、および記憶装置の制御方法
US20060294295A1 (en) 2005-06-24 2006-12-28 Yukio Fukuzo DRAM chip device well-communicated with flash memory chip and multi-chip package comprising such a device
US7317630B2 (en) * 2005-07-15 2008-01-08 Atmel Corporation Nonvolatile semiconductor memory apparatus
US7631245B2 (en) 2005-09-26 2009-12-08 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7954037B2 (en) 2005-10-25 2011-05-31 Sandisk Il Ltd Method for recovering from errors in flash memory
KR101224919B1 (ko) 2006-02-07 2013-01-22 삼성전자주식회사 온도 변화에 따라 고전압 발생 회로의 출력 전압 레벨을조절하는 반도체 메모리 장치
US7483327B2 (en) 2006-03-02 2009-01-27 Freescale Semiconductor, Inc. Apparatus and method for adjusting an operating parameter of an integrated circuit
CN102394101B (zh) * 2006-05-12 2014-12-31 苹果公司 具有自适应容量的存储设备
US7672161B2 (en) * 2007-04-30 2010-03-02 Spansion Llc Adaptive detection of threshold levels in memory

Also Published As

Publication number Publication date
KR101155751B1 (ko) 2012-06-12
ES2383588T3 (es) 2012-06-22
KR101217416B1 (ko) 2013-01-02
EP2337030A1 (en) 2011-06-22
EP2221827A1 (en) 2010-08-25
EP2330595A1 (en) 2011-06-08
KR20110073561A (ko) 2011-06-29
US20070263454A1 (en) 2007-11-15
KR101283145B1 (ko) 2013-07-05
EP2221823A1 (en) 2010-08-25
EP2022058B1 (en) 2010-07-21
KR101206630B1 (ko) 2012-11-29
KR20120001815A (ko) 2012-01-04
KR101151597B1 (ko) 2012-05-31
KR101116468B1 (ko) 2012-03-07
EP2330597A1 (en) 2011-06-08
KR20110069159A (ko) 2011-06-22
KR101184557B1 (ko) 2012-09-19
ATE475183T1 (de) 2010-08-15
KR20120098965A (ko) 2012-09-05
KR101116512B1 (ko) 2012-02-28
KR101184554B1 (ko) 2012-09-20
KR20120098964A (ko) 2012-09-05
KR20120001816A (ko) 2012-01-04
US20100070801A1 (en) 2010-03-18
KR20110073562A (ko) 2011-06-29
ES2392334T3 (es) 2012-12-07
US8116133B2 (en) 2012-02-14
WO2007134277A2 (en) 2007-11-22
DE602007007938D1 (de) 2010-09-02
JP5358431B2 (ja) 2013-12-04
EP2333781A1 (en) 2011-06-15
US7639542B2 (en) 2009-12-29
US7881108B2 (en) 2011-02-01
CN101484947B (zh) 2012-08-15
EP2022058A2 (en) 2009-02-11
KR20110073558A (ko) 2011-06-29
KR20120098962A (ko) 2012-09-05
CN102768853A (zh) 2012-11-07
CN102779554A (zh) 2012-11-14
CN101484947A (zh) 2009-07-15
KR20120098963A (ko) 2012-09-05
KR101193696B1 (ko) 2012-10-22
KR101121493B1 (ko) 2012-02-28
EP2330593A1 (en) 2011-06-08
EP2221823B1 (en) 2012-02-29
EP2333780B1 (en) 2013-03-27
EP2337030B1 (en) 2016-03-23
HK1127155A1 (en) 2009-09-18
EP2330592B1 (en) 2012-08-22
JP2009537935A (ja) 2009-10-29
KR20110073560A (ko) 2011-06-29
KR20120001814A (ko) 2012-01-04
HK1159307A1 (en) 2012-07-27
WO2007134277A3 (en) 2008-08-14
KR101116554B1 (ko) 2012-02-28
EP2333780A1 (en) 2011-06-15
EP2221827B1 (en) 2013-09-25
KR20110069160A (ko) 2011-06-22
CN102768853B (zh) 2015-07-15
KR20120098961A (ko) 2012-09-05
KR101173721B1 (ko) 2012-08-13
KR20090026283A (ko) 2009-03-12
US20100070798A1 (en) 2010-03-18
HK1159305A1 (en) 2012-07-27
KR101206714B1 (ko) 2012-11-29
KR101133897B1 (ko) 2012-04-09
KR20110073559A (ko) 2011-06-29
EP2330592A1 (en) 2011-06-08
CN102779554B (zh) 2015-12-16
KR101217438B1 (ko) 2013-01-02

Similar Documents

Publication Publication Date Title
ATE475183T1 (de) Wartungsarbeiten für mehrstufige datenspeicherzellen
WO2007134253A3 (en) Use of alternative value in cell detection
US9922706B2 (en) Solid state storage device using state prediction method
KR101097510B1 (ko) 고체 상태 메모리에서의 프로그래밍 레이트의 식별 및 제어
US8913437B2 (en) Inter-cell interference cancellation
US9607692B2 (en) Threshold voltage distribution determination
CN113383386B (zh) 用于存储器子系统电压调节的电源管理组件
WO2009070406A3 (en) Method and apparatus for reading data from flash memory
US20200285419A1 (en) Memory system and method
ATE476741T1 (de) Testvorrichtung und testverfahren
WO2009095902A3 (en) Systems and methods for handling immediate data errors in flash memory
KR20120051606A (ko) 저장 디바이스 내에 에러 데이터를 추적하는 시스템 및 방법
WO2009129174A3 (en) Apparatus and method for identifying disk drives with unreported data corruption
KR20120062818A (ko) 메모리 디바이스들에서 임계 전압 변화를 처리하는 방법들, 디바이스들, 및 시스템들
US8514633B2 (en) Method for operating semiconductor memory device
Attard et al. Ecological disturbance influences adaptive divergence despite high gene flow in golden perch (Macquaria ambigua): implications for management and resilience to climate change
EP1847999A3 (en) Circuit and a method of determining the resistive state of a resistive memory cell
WO2007134301A3 (en) Iterative memory cell charging based on reference cell value
CN104112477B (zh) 用于固态储存装置中晶体单元的群组区分方法
CN103811072B (zh) 一种高可靠性NAND Flash的读取方法及其系统
EP2669895A3 (en) Stress-based techniques for detecting an imminent readfailure in a non-volatile memory array
TW201715399A (zh) 資料儲存裝置及其資料維護方法
US7580297B2 (en) Readout of multi-level storage cells
GB2491495A (en) Reference cells for spin torque based memory device
US20130262942A1 (en) Flash memory lifetime evaluation method