ATE544182T1 - Feldeffekttransistor des fin-typs - Google Patents

Feldeffekttransistor des fin-typs

Info

Publication number
ATE544182T1
ATE544182T1 AT06788172T AT06788172T ATE544182T1 AT E544182 T1 ATE544182 T1 AT E544182T1 AT 06788172 T AT06788172 T AT 06788172T AT 06788172 T AT06788172 T AT 06788172T AT E544182 T1 ATE544182 T1 AT E544182T1
Authority
AT
Austria
Prior art keywords
fin
finfet
gate
field effect
effect transistor
Prior art date
Application number
AT06788172T
Other languages
German (de)
English (en)
Inventor
Edward Nowak
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE544182T1 publication Critical patent/ATE544182T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6217—Fin field-effect transistors [FinFET] having non-uniform gate electrodes, e.g. gate conductors having varying doping

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
AT06788172T 2005-08-03 2006-07-21 Feldeffekttransistor des fin-typs ATE544182T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/161,442 US7348642B2 (en) 2005-08-03 2005-08-03 Fin-type field effect transistor
PCT/US2006/028465 WO2007019023A2 (en) 2005-08-03 2006-07-21 Fin-type field effect transistor

Publications (1)

Publication Number Publication Date
ATE544182T1 true ATE544182T1 (de) 2012-02-15

Family

ID=37716900

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06788172T ATE544182T1 (de) 2005-08-03 2006-07-21 Feldeffekttransistor des fin-typs

Country Status (8)

Country Link
US (4) US7348642B2 (enExample)
EP (1) EP1920467B1 (enExample)
JP (1) JP5220604B2 (enExample)
KR (1) KR101027173B1 (enExample)
CN (1) CN101443912B (enExample)
AT (1) ATE544182T1 (enExample)
TW (1) TWI397999B (enExample)
WO (1) WO2007019023A2 (enExample)

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Also Published As

Publication number Publication date
JP2009503893A (ja) 2009-01-29
TW200717805A (en) 2007-05-01
US8524547B2 (en) 2013-09-03
CN101443912B (zh) 2011-03-23
CN101443912A (zh) 2009-05-27
JP5220604B2 (ja) 2013-06-26
EP1920467A4 (en) 2011-03-02
US8129773B2 (en) 2012-03-06
US8106439B2 (en) 2012-01-31
TWI397999B (zh) 2013-06-01
EP1920467A2 (en) 2008-05-14
US20070029624A1 (en) 2007-02-08
US20080124868A1 (en) 2008-05-29
US20120129304A1 (en) 2012-05-24
US20080087968A1 (en) 2008-04-17
WO2007019023A3 (en) 2008-11-13
KR20080030110A (ko) 2008-04-03
US7348642B2 (en) 2008-03-25
WO2007019023A2 (en) 2007-02-15
EP1920467B1 (en) 2012-02-01
KR101027173B1 (ko) 2011-04-05

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