JP2013509731A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013509731A5 JP2013509731A5 JP2012537175A JP2012537175A JP2013509731A5 JP 2013509731 A5 JP2013509731 A5 JP 2013509731A5 JP 2012537175 A JP2012537175 A JP 2012537175A JP 2012537175 A JP2012537175 A JP 2012537175A JP 2013509731 A5 JP2013509731 A5 JP 2013509731A5
- Authority
- JP
- Japan
- Prior art keywords
- drain
- region
- effect transistor
- field effect
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/611,055 US8390039B2 (en) | 2009-11-02 | 2009-11-02 | Junction field effect transistor |
| US12/611,055 | 2009-11-02 | ||
| PCT/US2010/055007 WO2011053932A1 (en) | 2009-11-02 | 2010-11-01 | Junction field effect transistor and method of manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013509731A JP2013509731A (ja) | 2013-03-14 |
| JP2013509731A5 true JP2013509731A5 (enExample) | 2013-10-24 |
| JP5481562B2 JP5481562B2 (ja) | 2014-04-23 |
Family
ID=43608374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012537175A Active JP5481562B2 (ja) | 2009-11-02 | 2010-11-01 | 接合型電界効果トランジスタおよびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8390039B2 (enExample) |
| EP (1) | EP2497117B1 (enExample) |
| JP (1) | JP5481562B2 (enExample) |
| CN (1) | CN102714225B (enExample) |
| WO (1) | WO2011053932A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8193046B2 (en) | 2009-11-02 | 2012-06-05 | Analog Devices, Inc. | Junction field effect transistor |
| US9559203B2 (en) * | 2013-07-15 | 2017-01-31 | Analog Devices, Inc. | Modular approach for reducing flicker noise of MOSFETs |
| US9202934B2 (en) * | 2013-10-16 | 2015-12-01 | Analog Devices Global | Junction field effect transistor, and method of manufacture thereof |
| US10784372B2 (en) | 2015-04-03 | 2020-09-22 | Magnachip Semiconductor, Ltd. | Semiconductor device with high voltage field effect transistor and junction field effect transistor |
| KR101975630B1 (ko) * | 2015-04-03 | 2019-08-29 | 매그나칩 반도체 유한회사 | 접합 트랜지스터와 고전압 트랜지스터 구조를 포함한 반도체 소자 및 그 제조 방법 |
| KR102406116B1 (ko) * | 2018-04-27 | 2022-06-07 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
| GB2606922A (en) * | 2020-12-09 | 2022-11-23 | Search For The Next Ltd | A transistor device |
| GB2612643A (en) * | 2021-11-08 | 2023-05-10 | Search For The Next Ltd | A novel transistor device |
| CN115995463A (zh) * | 2022-11-11 | 2023-04-21 | 天狼芯半导体(成都)有限公司 | 半导体器件、半导体器件的制备方法及电子设备 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526076B1 (enExample) | 1971-04-28 | 1977-02-18 | ||
| JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
| US4452646A (en) | 1981-09-28 | 1984-06-05 | Mcdonnell Douglas Corporation | Method of making planar III-V compound device by ion implantation |
| US4648174A (en) | 1985-02-05 | 1987-03-10 | General Electric Company | Method of making high breakdown voltage semiconductor device |
| JPS6417480A (en) * | 1987-07-13 | 1989-01-20 | Toshiba Corp | Junction type field-effect transistor |
| JPH01243475A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 半導体素子 |
| JPH0320047A (ja) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | 半導体装置 |
| US5008719A (en) * | 1989-10-20 | 1991-04-16 | Harris Corporation | Dual layer surface gate JFET having enhanced gate-channel breakdown voltage |
| JP3039200B2 (ja) | 1993-06-07 | 2000-05-08 | 日本電気株式会社 | Ｍｏｓトランジスタおよびその製造方法 |
| GB9326344D0 (en) | 1993-12-23 | 1994-02-23 | Texas Instruments Ltd | High voltage transistor for sub micron cmos processes |
| US5543643A (en) | 1995-07-13 | 1996-08-06 | Lsi Logic Corporation | Combined JFET and MOS transistor device, circuit |
| US5939752A (en) * | 1995-12-12 | 1999-08-17 | Siliconix Incorporated | Low voltage MOSFET with low on-resistance and high breakdown voltage |
| FR2776832B1 (fr) | 1998-03-31 | 2000-06-16 | Sgs Thomson Microelectronics | Procede de fabrication de transistors jfet |
| JP3454734B2 (ja) | 1998-12-08 | 2003-10-06 | 三洋電機株式会社 | 半導体集積回路の製造方法 |
| JP3812421B2 (ja) * | 2001-06-14 | 2006-08-23 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
| US6740907B2 (en) * | 2002-10-04 | 2004-05-25 | Rohm Co., Ltd. | Junction field-effect transistor |
| US6927153B2 (en) | 2003-02-25 | 2005-08-09 | Xerox Corporation | Ion implantation with multiple concentration levels |
| JP4610865B2 (ja) * | 2003-05-30 | 2011-01-12 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| JP5168773B2 (ja) * | 2005-11-14 | 2013-03-27 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
| TWI267984B (en) * | 2005-12-07 | 2006-12-01 | Richtek Technology Corp | Lateral DMOS device insensitive to the corner oxide |
| US7411231B2 (en) * | 2005-12-22 | 2008-08-12 | Analog Devices, Inc. | JFET with drain and/or source modification implant |
-
2009
- 2009-11-02 US US12/611,055 patent/US8390039B2/en active Active
-
2010
- 2010-11-01 JP JP2012537175A patent/JP5481562B2/ja active Active
- 2010-11-01 EP EP10790802.2A patent/EP2497117B1/en active Active
- 2010-11-01 WO PCT/US2010/055007 patent/WO2011053932A1/en not_active Ceased
- 2010-11-01 CN CN201080049780.9A patent/CN102714225B/zh active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013509731A5 (enExample) | ||
| JP2011191754A5 (ja) | 半導体装置 | |
| JP2013058770A5 (enExample) | ||
| JP2015164220A5 (enExample) | ||
| JP2011109079A5 (enExample) | ||
| JP2013138191A5 (enExample) | ||
| JP2011119674A5 (enExample) | ||
| JP2012199528A5 (enExample) | ||
| JP2010062536A5 (ja) | 薄膜トランジスタ、及び当該薄膜トランジスタを有する表示装置 | |
| JP2012039059A5 (enExample) | ||
| JP2010109342A5 (enExample) | ||
| SG170670A1 (en) | Method of fabricating a silicon tunneling field effect transistor (tfet) with high drive current | |
| JP2011119688A5 (enExample) | ||
| JP2011029635A5 (ja) | 半導体装置 | |
| JP2014030185A5 (ja) | 半導体装置 | |
| JP2015222807A5 (enExample) | ||
| JP2011216879A5 (enExample) | ||
| JP2013101360A5 (enExample) | ||
| JP2011204347A5 (ja) | 半導体メモリ装置 | |
| JP2009231821A5 (enExample) | ||
| JP2013038398A5 (enExample) | ||
| JP2012015502A5 (enExample) | ||
| JP2011124560A5 (enExample) | ||
| JP2012080092A5 (enExample) | ||
| SE0800764L (sv) | Insulated gate field effect transistor in series with a junction field effect transistor |