CN102714225B - 结型场效应晶体管及其制造方法 - Google Patents

结型场效应晶体管及其制造方法 Download PDF

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Publication number
CN102714225B
CN102714225B CN201080049780.9A CN201080049780A CN102714225B CN 102714225 B CN102714225 B CN 102714225B CN 201080049780 A CN201080049780 A CN 201080049780A CN 102714225 B CN102714225 B CN 102714225B
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China
Prior art keywords
drain
region
source
effect transistor
field effect
Prior art date
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Active
Application number
CN201080049780.9A
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English (en)
Chinese (zh)
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CN102714225A (zh
Inventor
D·F·鲍尔斯
A·D·贝因
P·M·达利
A·M·德格纳恩
M·T·邓巴
P·M·迈克古尼斯
B·P·斯坦森
W·A·拉尼
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Analog Devices Inc
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Analog Devices Inc
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Publication of CN102714225A publication Critical patent/CN102714225A/zh
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Publication of CN102714225B publication Critical patent/CN102714225B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201080049780.9A 2009-11-02 2010-11-01 结型场效应晶体管及其制造方法 Active CN102714225B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/611,055 US8390039B2 (en) 2009-11-02 2009-11-02 Junction field effect transistor
US12/611,055 2009-11-02
PCT/US2010/055007 WO2011053932A1 (en) 2009-11-02 2010-11-01 Junction field effect transistor and method of manufacturing the same

Publications (2)

Publication Number Publication Date
CN102714225A CN102714225A (zh) 2012-10-03
CN102714225B true CN102714225B (zh) 2015-08-05

Family

ID=43608374

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080049780.9A Active CN102714225B (zh) 2009-11-02 2010-11-01 结型场效应晶体管及其制造方法

Country Status (5)

Country Link
US (1) US8390039B2 (enExample)
EP (1) EP2497117B1 (enExample)
JP (1) JP5481562B2 (enExample)
CN (1) CN102714225B (enExample)
WO (1) WO2011053932A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193046B2 (en) 2009-11-02 2012-06-05 Analog Devices, Inc. Junction field effect transistor
US9559203B2 (en) * 2013-07-15 2017-01-31 Analog Devices, Inc. Modular approach for reducing flicker noise of MOSFETs
US9202934B2 (en) * 2013-10-16 2015-12-01 Analog Devices Global Junction field effect transistor, and method of manufacture thereof
US10784372B2 (en) 2015-04-03 2020-09-22 Magnachip Semiconductor, Ltd. Semiconductor device with high voltage field effect transistor and junction field effect transistor
KR101975630B1 (ko) * 2015-04-03 2019-08-29 매그나칩 반도체 유한회사 접합 트랜지스터와 고전압 트랜지스터 구조를 포함한 반도체 소자 및 그 제조 방법
KR102406116B1 (ko) * 2018-04-27 2022-06-07 현대자동차 주식회사 반도체 소자 및 그 제조 방법
GB2606922A (en) * 2020-12-09 2022-11-23 Search For The Next Ltd A transistor device
GB2612643A (en) * 2021-11-08 2023-05-10 Search For The Next Ltd A novel transistor device
CN115995463A (zh) * 2022-11-11 2023-04-21 天狼芯半导体(成都)有限公司 半导体器件、半导体器件的制备方法及电子设备

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US4452646A (en) * 1981-09-28 1984-06-05 Mcdonnell Douglas Corporation Method of making planar III-V compound device by ion implantation
CN1496587A (zh) * 2001-06-14 2004-05-12 ס�ѵ�����ҵ��ʽ���� 横向结型场效应晶体管
CN1574389A (zh) * 2003-05-30 2005-02-02 松下电器产业株式会社 半导体器件及其制造方法
CN101366123A (zh) * 2005-12-22 2009-02-11 模拟设备股份有限公司 漏极和/或源极上带改进的植入物的结型场效应晶体管

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JPS526076B1 (enExample) 1971-04-28 1977-02-18
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
US4648174A (en) 1985-02-05 1987-03-10 General Electric Company Method of making high breakdown voltage semiconductor device
JPS6417480A (en) * 1987-07-13 1989-01-20 Toshiba Corp Junction type field-effect transistor
JPH01243475A (ja) * 1988-03-25 1989-09-28 Hitachi Ltd 半導体素子
JPH0320047A (ja) * 1989-06-16 1991-01-29 Matsushita Electron Corp 半導体装置
US5008719A (en) * 1989-10-20 1991-04-16 Harris Corporation Dual layer surface gate JFET having enhanced gate-channel breakdown voltage
JP3039200B2 (ja) 1993-06-07 2000-05-08 日本電気株式会社 Ｍｏｓトランジスタおよびその製造方法
GB9326344D0 (en) 1993-12-23 1994-02-23 Texas Instruments Ltd High voltage transistor for sub micron cmos processes
US5543643A (en) 1995-07-13 1996-08-06 Lsi Logic Corporation Combined JFET and MOS transistor device, circuit
US5939752A (en) * 1995-12-12 1999-08-17 Siliconix Incorporated Low voltage MOSFET with low on-resistance and high breakdown voltage
FR2776832B1 (fr) 1998-03-31 2000-06-16 Sgs Thomson Microelectronics Procede de fabrication de transistors jfet
JP3454734B2 (ja) 1998-12-08 2003-10-06 三洋電機株式会社 半導体集積回路の製造方法
US6740907B2 (en) * 2002-10-04 2004-05-25 Rohm Co., Ltd. Junction field-effect transistor
US6927153B2 (en) 2003-02-25 2005-08-09 Xerox Corporation Ion implantation with multiple concentration levels
JP5168773B2 (ja) * 2005-11-14 2013-03-27 住友電気工業株式会社 横型接合型電界効果トランジスタ
TWI267984B (en) * 2005-12-07 2006-12-01 Richtek Technology Corp Lateral DMOS device insensitive to the corner oxide

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4452646A (en) * 1981-09-28 1984-06-05 Mcdonnell Douglas Corporation Method of making planar III-V compound device by ion implantation
CN1496587A (zh) * 2001-06-14 2004-05-12 ס�ѵ�����ҵ��ʽ���� 横向结型场效应晶体管
CN1574389A (zh) * 2003-05-30 2005-02-02 松下电器产业株式会社 半导体器件及其制造方法
CN101366123A (zh) * 2005-12-22 2009-02-11 模拟设备股份有限公司 漏极和/或源极上带改进的植入物的结型场效应晶体管

Also Published As

Publication number Publication date
US20110101423A1 (en) 2011-05-05
WO2011053932A1 (en) 2011-05-05
JP2013509731A (ja) 2013-03-14
JP5481562B2 (ja) 2014-04-23
CN102714225A (zh) 2012-10-03
EP2497117A1 (en) 2012-09-12
US8390039B2 (en) 2013-03-05
EP2497117B1 (en) 2019-01-02

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