JP5481562B2 - 接合型電界効果トランジスタおよびその製造方法 - Google Patents
接合型電界効果トランジスタおよびその製造方法 Download PDFInfo
- Publication number
- JP5481562B2 JP5481562B2 JP2012537175A JP2012537175A JP5481562B2 JP 5481562 B2 JP5481562 B2 JP 5481562B2 JP 2012537175 A JP2012537175 A JP 2012537175A JP 2012537175 A JP2012537175 A JP 2012537175A JP 5481562 B2 JP5481562 B2 JP 5481562B2
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- JP
- Japan
- Prior art keywords
- drain
- region
- source
- field effect
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000002353 field-effect transistor method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 33
- 230000005669 field effect Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 21
- 239000002019 doping agent Substances 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 3
- 108091006146 Channels Proteins 0.000 description 32
- 238000000034 method Methods 0.000 description 15
- 239000008186 active pharmaceutical agent Substances 0.000 description 11
- 230000005684 electric field Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 101000635799 Homo sapiens Run domain Beclin-1-interacting and cysteine-rich domain-containing protein Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102100030852 Run domain Beclin-1-interacting and cysteine-rich domain-containing protein Human genes 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/051—Manufacture or treatment of FETs having PN junction gates
- H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/611,055 US8390039B2 (en) | 2009-11-02 | 2009-11-02 | Junction field effect transistor |
| US12/611,055 | 2009-11-02 | ||
| PCT/US2010/055007 WO2011053932A1 (en) | 2009-11-02 | 2010-11-01 | Junction field effect transistor and method of manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013509731A JP2013509731A (ja) | 2013-03-14 |
| JP2013509731A5 JP2013509731A5 (enExample) | 2013-10-24 |
| JP5481562B2 true JP5481562B2 (ja) | 2014-04-23 |
Family
ID=43608374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012537175A Active JP5481562B2 (ja) | 2009-11-02 | 2010-11-01 | 接合型電界効果トランジスタおよびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8390039B2 (enExample) |
| EP (1) | EP2497117B1 (enExample) |
| JP (1) | JP5481562B2 (enExample) |
| CN (1) | CN102714225B (enExample) |
| WO (1) | WO2011053932A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8193046B2 (en) | 2009-11-02 | 2012-06-05 | Analog Devices, Inc. | Junction field effect transistor |
| US9559203B2 (en) * | 2013-07-15 | 2017-01-31 | Analog Devices, Inc. | Modular approach for reducing flicker noise of MOSFETs |
| US9202934B2 (en) * | 2013-10-16 | 2015-12-01 | Analog Devices Global | Junction field effect transistor, and method of manufacture thereof |
| US10784372B2 (en) | 2015-04-03 | 2020-09-22 | Magnachip Semiconductor, Ltd. | Semiconductor device with high voltage field effect transistor and junction field effect transistor |
| KR101975630B1 (ko) * | 2015-04-03 | 2019-08-29 | 매그나칩 반도체 유한회사 | 접합 트랜지스터와 고전압 트랜지스터 구조를 포함한 반도체 소자 및 그 제조 방법 |
| KR102406116B1 (ko) * | 2018-04-27 | 2022-06-07 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
| GB2606922A (en) * | 2020-12-09 | 2022-11-23 | Search For The Next Ltd | A transistor device |
| GB2612643A (en) * | 2021-11-08 | 2023-05-10 | Search For The Next Ltd | A novel transistor device |
| CN115995463A (zh) * | 2022-11-11 | 2023-04-21 | 天狼芯半导体(成都)有限公司 | 半导体器件、半导体器件的制备方法及电子设备 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526076B1 (enExample) | 1971-04-28 | 1977-02-18 | ||
| JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
| US4452646A (en) | 1981-09-28 | 1984-06-05 | Mcdonnell Douglas Corporation | Method of making planar III-V compound device by ion implantation |
| US4648174A (en) | 1985-02-05 | 1987-03-10 | General Electric Company | Method of making high breakdown voltage semiconductor device |
| JPS6417480A (en) * | 1987-07-13 | 1989-01-20 | Toshiba Corp | Junction type field-effect transistor |
| JPH01243475A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 半導体素子 |
| JPH0320047A (ja) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | 半導体装置 |
| US5008719A (en) * | 1989-10-20 | 1991-04-16 | Harris Corporation | Dual layer surface gate JFET having enhanced gate-channel breakdown voltage |
| JP3039200B2 (ja) | 1993-06-07 | 2000-05-08 | 日本電気株式会社 | Ｍｏｓトランジスタおよびその製造方法 |
| GB9326344D0 (en) | 1993-12-23 | 1994-02-23 | Texas Instruments Ltd | High voltage transistor for sub micron cmos processes |
| US5543643A (en) | 1995-07-13 | 1996-08-06 | Lsi Logic Corporation | Combined JFET and MOS transistor device, circuit |
| US5939752A (en) * | 1995-12-12 | 1999-08-17 | Siliconix Incorporated | Low voltage MOSFET with low on-resistance and high breakdown voltage |
| FR2776832B1 (fr) | 1998-03-31 | 2000-06-16 | Sgs Thomson Microelectronics | Procede de fabrication de transistors jfet |
| JP3454734B2 (ja) | 1998-12-08 | 2003-10-06 | 三洋電機株式会社 | 半導体集積回路の製造方法 |
| JP3812421B2 (ja) * | 2001-06-14 | 2006-08-23 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
| US6740907B2 (en) * | 2002-10-04 | 2004-05-25 | Rohm Co., Ltd. | Junction field-effect transistor |
| US6927153B2 (en) | 2003-02-25 | 2005-08-09 | Xerox Corporation | Ion implantation with multiple concentration levels |
| JP4610865B2 (ja) * | 2003-05-30 | 2011-01-12 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| JP5168773B2 (ja) * | 2005-11-14 | 2013-03-27 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
| TWI267984B (en) * | 2005-12-07 | 2006-12-01 | Richtek Technology Corp | Lateral DMOS device insensitive to the corner oxide |
| US7411231B2 (en) * | 2005-12-22 | 2008-08-12 | Analog Devices, Inc. | JFET with drain and/or source modification implant |
-
2009
- 2009-11-02 US US12/611,055 patent/US8390039B2/en active Active
-
2010
- 2010-11-01 JP JP2012537175A patent/JP5481562B2/ja active Active
- 2010-11-01 EP EP10790802.2A patent/EP2497117B1/en active Active
- 2010-11-01 WO PCT/US2010/055007 patent/WO2011053932A1/en not_active Ceased
- 2010-11-01 CN CN201080049780.9A patent/CN102714225B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20110101423A1 (en) | 2011-05-05 |
| WO2011053932A1 (en) | 2011-05-05 |
| JP2013509731A (ja) | 2013-03-14 |
| CN102714225A (zh) | 2012-10-03 |
| EP2497117A1 (en) | 2012-09-12 |
| US8390039B2 (en) | 2013-03-05 |
| CN102714225B (zh) | 2015-08-05 |
| EP2497117B1 (en) | 2019-01-02 |
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