ATE475199T1 - Selbstausgerichteter stossionisations- feldeffekttransistor - Google Patents

Selbstausgerichteter stossionisations- feldeffekttransistor

Info

Publication number
ATE475199T1
ATE475199T1 AT07849110T AT07849110T ATE475199T1 AT E475199 T1 ATE475199 T1 AT E475199T1 AT 07849110 T AT07849110 T AT 07849110T AT 07849110 T AT07849110 T AT 07849110T AT E475199 T1 ATE475199 T1 AT E475199T1
Authority
AT
Austria
Prior art keywords
source
region
drain
self
field effect
Prior art date
Application number
AT07849110T
Other languages
English (en)
Inventor
Gilberto Curatola
Dal Mark Van
Jan Sonsky
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE475199T1 publication Critical patent/ATE475199T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/021—Manufacture or treatment of gated diodes, e.g. field-controlled diodes [FCD]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Measuring Fluid Pressure (AREA)
  • Surgical Instruments (AREA)
  • Thin Film Transistor (AREA)
AT07849110T 2006-11-16 2007-11-13 Selbstausgerichteter stossionisations- feldeffekttransistor ATE475199T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06124250 2006-11-16
PCT/IB2007/054607 WO2008059443A1 (en) 2006-11-16 2007-11-13 Self-aligned impact-ionization field effect transistor

Publications (1)

Publication Number Publication Date
ATE475199T1 true ATE475199T1 (de) 2010-08-15

Family

ID=39145427

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07849110T ATE475199T1 (de) 2006-11-16 2007-11-13 Selbstausgerichteter stossionisations- feldeffekttransistor

Country Status (7)

Country Link
US (1) US20100044760A1 (de)
EP (1) EP2095427B1 (de)
CN (1) CN101542737B (de)
AT (1) ATE475199T1 (de)
DE (1) DE602007007983D1 (de)
TW (1) TW200832705A (de)
WO (1) WO2008059443A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227841B2 (en) 2008-04-28 2012-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned impact-ionization field effect transistor
US8680619B2 (en) * 2010-03-16 2014-03-25 Taiwan Semiconductor Manufacturing Compnay, Ltd. Method of fabricating hybrid impact-ionization semiconductor device
CN101894866B (zh) * 2010-07-08 2012-08-22 复旦大学 凹陷沟道的碰撞电离型场效应晶体管及其制造方法
CN102104027B (zh) * 2010-12-17 2013-04-10 复旦大学 一种在单块芯片上集成高性能器件与低功耗器件的制造方法
JP5715551B2 (ja) * 2011-11-25 2015-05-07 株式会社東芝 半導体装置およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539238A (en) * 1992-09-02 1996-07-23 Texas Instruments Incorporated Area efficient high voltage Mosfets with vertical resurf drift regions
JP3395473B2 (ja) * 1994-10-25 2003-04-14 富士電機株式会社 横型トレンチｍｉｓｆｅｔおよびその製造方法
US5753555A (en) * 1995-11-22 1998-05-19 Nec Corporation Method for forming semiconductor device
JP3575908B2 (ja) * 1996-03-28 2004-10-13 株式会社東芝 半導体装置
FR2819341B1 (fr) * 2001-01-11 2003-06-27 St Microelectronics Sa Procede d'integration d'une cellule dram
US6891220B2 (en) * 2002-04-05 2005-05-10 Silicon Storage Technology, Inc. Method of programming electrons onto a floating gate of a non-volatile memory cell
US20060113612A1 (en) * 2002-06-19 2006-06-01 Kailash Gopalakrishnan Insulated-gate semiconductor device and approach involving junction-induced intermediate region
US6861689B2 (en) * 2002-11-08 2005-03-01 Freescale Semiconductor, Inc. One transistor DRAM cell structure and method for forming
US7049230B2 (en) * 2003-11-26 2006-05-23 Hynix Semiconductor Inc. Method of forming a contact plug in a semiconductor device
EP1577952B1 (de) * 2004-03-09 2018-07-04 STMicroelectronics Srl Verfahren zur Herstellung eines Hochspannungsfeldeffekttransistors mit isoliertem Gate
US7361563B2 (en) * 2004-06-17 2008-04-22 Samsung Electronics Co., Ltd. Methods of fabricating a semiconductor device using a selective epitaxial growth technique
US20060125041A1 (en) * 2004-12-14 2006-06-15 Electronics And Telecommunications Research Institute Transistor using impact ionization and method of manufacturing the same
US8466505B2 (en) * 2005-03-10 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-level flash memory cell capable of fast programming
JP2007149721A (ja) * 2005-11-24 2007-06-14 Nec Electronics Corp 不揮発性半導体記憶装置及びその製造方法
US7994010B2 (en) * 2007-12-27 2011-08-09 Chartered Semiconductor Manufacturing Ltd. Process for fabricating a semiconductor device having embedded epitaxial regions
CN101494222B (zh) * 2008-01-23 2010-08-25 苏州东微半导体有限公司 半导体存储器器件、半导体存储器阵列及写入方法
US8227841B2 (en) * 2008-04-28 2012-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned impact-ionization field effect transistor
US7829947B2 (en) * 2009-03-17 2010-11-09 Alpha & Omega Semiconductor Incorporated Bottom-drain LDMOS power MOSFET structure having a top drain strap

Also Published As

Publication number Publication date
DE602007007983D1 (de) 2010-09-02
CN101542737A (zh) 2009-09-23
EP2095427A1 (de) 2009-09-02
CN101542737B (zh) 2012-03-21
EP2095427B1 (de) 2010-07-21
WO2008059443A1 (en) 2008-05-22
TW200832705A (en) 2008-08-01
US20100044760A1 (en) 2010-02-25

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Legal Events

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