ATE544182T1 - Feldeffekttransistor des fin-typs - Google Patents
Feldeffekttransistor des fin-typsInfo
- Publication number
- ATE544182T1 ATE544182T1 AT06788172T AT06788172T ATE544182T1 AT E544182 T1 ATE544182 T1 AT E544182T1 AT 06788172 T AT06788172 T AT 06788172T AT 06788172 T AT06788172 T AT 06788172T AT E544182 T1 ATE544182 T1 AT E544182T1
- Authority
- AT
- Austria
- Prior art keywords
- fin
- finfet
- gate
- field effect
- effect transistor
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000006378 damage Effects 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7856—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with an non-uniform gate, e.g. varying doping structure, shape or composition on different sides of the fin, or different gate insulator thickness or composition on opposing fin sides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/161,442 US7348642B2 (en) | 2005-08-03 | 2005-08-03 | Fin-type field effect transistor |
PCT/US2006/028465 WO2007019023A2 (en) | 2005-08-03 | 2006-07-21 | Fin-type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE544182T1 true ATE544182T1 (de) | 2012-02-15 |
Family
ID=37716900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06788172T ATE544182T1 (de) | 2005-08-03 | 2006-07-21 | Feldeffekttransistor des fin-typs |
Country Status (8)
Country | Link |
---|---|
US (4) | US7348642B2 (de) |
EP (1) | EP1920467B1 (de) |
JP (1) | JP5220604B2 (de) |
KR (1) | KR101027173B1 (de) |
CN (1) | CN101443912B (de) |
AT (1) | ATE544182T1 (de) |
TW (1) | TWI397999B (de) |
WO (1) | WO2007019023A2 (de) |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US7268058B2 (en) * | 2004-01-16 | 2007-09-11 | Intel Corporation | Tri-gate transistors and methods to fabricate same |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US7332439B2 (en) * | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US7858481B2 (en) * | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) * | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
US7348642B2 (en) * | 2005-08-03 | 2008-03-25 | International Business Machines Corporation | Fin-type field effect transistor |
US7595245B2 (en) * | 2005-08-12 | 2009-09-29 | Texas Instruments Incorporated | Semiconductor device having a gate electrode material feature located adjacent a gate width side of its gate electrode and a method of manufacture therefor |
DE102005039365B4 (de) * | 2005-08-19 | 2022-02-10 | Infineon Technologies Ag | Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
JP2008177278A (ja) * | 2007-01-17 | 2008-07-31 | Toshiba Corp | スタティック型半導体記憶装置 |
KR100887007B1 (ko) | 2007-10-12 | 2009-03-04 | 주식회사 동부하이텍 | Ldi의 알-스트링내 폴리 패턴 형성 방법 및 구조 |
US7994612B2 (en) * | 2008-04-21 | 2011-08-09 | International Business Machines Corporation | FinFETs single-sided implant formation |
WO2009130629A1 (en) * | 2008-04-23 | 2009-10-29 | Nxp B.V. | A fin fet and a method of manufacturing a fin fet |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US7979836B2 (en) * | 2008-08-15 | 2011-07-12 | International Business Machines Corporation | Split-gate DRAM with MuGFET, design structure, and method of manufacture |
US7781283B2 (en) * | 2008-08-15 | 2010-08-24 | International Business Machines Corporation | Split-gate DRAM with MuGFET, design structure, and method of manufacture |
US8331068B2 (en) | 2009-02-19 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD protection for FinFETs |
US8184472B2 (en) | 2009-03-13 | 2012-05-22 | International Business Machines Corporation | Split-gate DRAM with lateral control-gate MuGFET |
US8202780B2 (en) * | 2009-07-31 | 2012-06-19 | International Business Machines Corporation | Method for manufacturing a FinFET device comprising a mask to define a gate perimeter and another mask to define fin regions |
US8946028B2 (en) * | 2009-10-06 | 2015-02-03 | International Business Machines Corporation | Merged FinFETs and method of manufacturing the same |
US8716797B2 (en) | 2009-11-03 | 2014-05-06 | International Business Machines Corporation | FinFET spacer formation by oriented implantation |
US8174055B2 (en) * | 2010-02-17 | 2012-05-08 | Globalfoundries Inc. | Formation of FinFET gate spacer |
US8513102B2 (en) | 2010-11-08 | 2013-08-20 | Leonard Forbes | Reduction of random telegraph signal (RTS) and 1/f noise in silicon MOS devices, circuits, and sensors |
JP2012243971A (ja) * | 2011-05-20 | 2012-12-10 | Sony Corp | ブートストラップ回路、インバータ回路、走査回路、表示装置、及び、電子機器 |
TWI636526B (zh) * | 2011-06-21 | 2018-09-21 | 鈺創科技股份有限公司 | 動態記憶體結構 |
US8595661B2 (en) * | 2011-07-29 | 2013-11-26 | Synopsys, Inc. | N-channel and p-channel finFET cell architecture |
US8466027B2 (en) | 2011-09-08 | 2013-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide formation and associated devices |
KR101805634B1 (ko) * | 2011-11-15 | 2017-12-08 | 삼성전자 주식회사 | Ⅲ-ⅴ족 배리어를 포함하는 반도체 소자 및 그 제조방법 |
CN103165428B (zh) * | 2011-12-14 | 2015-12-09 | 中芯国际集成电路制造(上海)有限公司 | 制作半导体器件的方法 |
US8901659B2 (en) | 2012-02-09 | 2014-12-02 | International Business Machines Corporation | Tapered nanowire structure with reduced off current |
US8637371B2 (en) | 2012-02-16 | 2014-01-28 | International Business Machines Corporation | Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the same |
US8927432B2 (en) * | 2012-06-14 | 2015-01-06 | International Business Machines Corporation | Continuously scalable width and height semiconductor fins |
KR20140040543A (ko) * | 2012-09-26 | 2014-04-03 | 삼성전자주식회사 | 핀 구조의 전계효과 트랜지스터, 이를 포함하는 메모리 장치 및 그 반도체 장치 |
CN103779217A (zh) * | 2012-10-18 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | 一种鳍片型场效应晶体管及其制作方法 |
CN103811338B (zh) * | 2012-11-08 | 2016-12-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
US9123654B2 (en) * | 2013-02-15 | 2015-09-01 | International Business Machines Corporation | Trilayer SIT process with transfer layer for FINFET patterning |
US9231106B2 (en) * | 2013-03-08 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET with an asymmetric source/drain structure and method of making same |
CN104103319B (zh) * | 2013-04-11 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | 反熔丝电路及其编程方法、反熔丝结构 |
KR102089682B1 (ko) | 2013-07-15 | 2020-03-16 | 삼성전자 주식회사 | 반도체 장치 및 이의 제조 방법 |
US9484460B2 (en) | 2013-09-19 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric |
US9190466B2 (en) | 2013-12-27 | 2015-11-17 | International Business Machines Corporation | Independent gate vertical FinFET structure |
US9691763B2 (en) | 2013-12-27 | 2017-06-27 | International Business Machines Corporation | Multi-gate FinFET semiconductor device with flexible design width |
US9633906B2 (en) * | 2014-01-24 | 2017-04-25 | International Business Machines Corporation | Gate structure cut after formation of epitaxial active regions |
KR20160134655A (ko) * | 2014-03-24 | 2016-11-23 | 인텔 코포레이션 | 단일 다이 상에 다수의 트랜지스터 핀 치수들을 얻기 위한 기술들 |
US9318574B2 (en) * | 2014-06-18 | 2016-04-19 | International Business Machines Corporation | Method and structure for enabling high aspect ratio sacrificial gates |
US9281065B2 (en) | 2014-08-11 | 2016-03-08 | Empire Technology Development Llc | Low-power nonvolatile memory cells with select gates |
JP6373686B2 (ja) | 2014-08-22 | 2018-08-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10559690B2 (en) | 2014-09-18 | 2020-02-11 | International Business Machines Corporation | Embedded source/drain structure for tall FinFET and method of formation |
KR102168302B1 (ko) | 2014-11-21 | 2020-10-22 | 삼성전자주식회사 | 3차원 채널을 이용하는 반도체 장치 |
KR102320049B1 (ko) | 2015-02-26 | 2021-11-01 | 삼성전자주식회사 | 경사진 활성 영역을 갖는 반도체 소자 |
US10018515B2 (en) * | 2015-09-16 | 2018-07-10 | Qualcomm Incorporated | Transistor temperature sensing |
US9484306B1 (en) | 2015-11-17 | 2016-11-01 | International Business Machines Corporation | MOSFET with asymmetric self-aligned contact |
TWI594421B (zh) * | 2016-06-28 | 2017-08-01 | 瑞昱半導體股份有限公司 | 鰭式場效電晶體及其製造方法 |
CN107579116A (zh) * | 2016-07-05 | 2018-01-12 | 瑞昱半导体股份有限公司 | 鳍式场效晶体管及其制造方法 |
KR101859587B1 (ko) | 2016-12-30 | 2018-05-18 | 서울시립대학교 산학협력단 | 네거티브 캐패시턴스 핀펫 소자 및 제조 방법 |
US10475790B2 (en) | 2017-09-28 | 2019-11-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Asymmetric gate pitch |
JP6612937B2 (ja) * | 2018-07-18 | 2019-11-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US11060846B2 (en) | 2018-12-19 | 2021-07-13 | Kla Corporation | Scatterometry based methods and systems for measurement of strain in semiconductor structures |
KR20210039772A (ko) | 2019-10-02 | 2021-04-12 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
US11670675B2 (en) | 2020-12-04 | 2023-06-06 | United Semiconductor Japan Co., Ltd. | Semiconductor device |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US539896A (en) * | 1895-05-28 | John graves | ||
JPS6226665A (ja) | 1985-07-26 | 1987-02-04 | Hitachi Ltd | 磁気デイスク駆動装置 |
JPS6226865A (ja) | 1985-07-29 | 1987-02-04 | New Japan Radio Co Ltd | 電界効果トランジスタ |
JPS62132366A (ja) | 1985-12-04 | 1987-06-15 | Nec Corp | 縦型電界効果トランジスタの製造方法 |
JPS63308962A (ja) * | 1987-06-11 | 1988-12-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US4907041A (en) * | 1988-09-16 | 1990-03-06 | Xerox Corporation | Intra-gate offset high voltage thin film transistor with misalignment immunity |
US5399896A (en) * | 1992-09-29 | 1995-03-21 | Mitsubishi Denki Kabushiki Kaisha | FET with a T-shaped gate of a particular structure |
US5985724A (en) * | 1996-10-01 | 1999-11-16 | Advanced Micro Devices, Inc. | Method for forming asymmetrical p-channel transistor having nitrided oxide patterned to selectively form a sidewall spacer |
US20020036328A1 (en) * | 1998-11-16 | 2002-03-28 | William R. Richards, Jr. | Offset drain fermi-threshold field effect transistors |
US6291325B1 (en) * | 1998-11-18 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Asymmetric MOS channel structure with drain extension and method for same |
JP3543946B2 (ja) * | 2000-04-14 | 2004-07-21 | 日本電気株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP2003533050A (ja) * | 2000-05-10 | 2003-11-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体デバイス |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
JP3729082B2 (ja) * | 2001-04-25 | 2005-12-21 | 日本電信電話株式会社 | 半導体保護回路 |
US6525354B2 (en) * | 2001-04-27 | 2003-02-25 | Fujitsu Limited | FET circuit block with reduced self-heating |
JP2002343806A (ja) * | 2001-05-15 | 2002-11-29 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6492212B1 (en) * | 2001-10-05 | 2002-12-10 | International Business Machines Corporation | Variable threshold voltage double gated transistors and method of fabrication |
US6967351B2 (en) * | 2001-12-04 | 2005-11-22 | International Business Machines Corporation | Finfet SRAM cell using low mobility plane for cell stability and method for forming |
JP3605086B2 (ja) * | 2002-03-29 | 2004-12-22 | 株式会社東芝 | 電界効果トランジスタ |
US6664582B2 (en) * | 2002-04-12 | 2003-12-16 | International Business Machines Corporation | Fin memory cell and method of fabrication |
US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
US6706571B1 (en) * | 2002-10-22 | 2004-03-16 | Advanced Micro Devices, Inc. | Method for forming multiple structures in a semiconductor device |
US6864519B2 (en) * | 2002-11-26 | 2005-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS SRAM cell configured using multiple-gate transistors |
US7259425B2 (en) * | 2003-01-23 | 2007-08-21 | Advanced Micro Devices, Inc. | Tri-gate and gate around MOSFET devices and methods for making same |
US6800885B1 (en) * | 2003-03-12 | 2004-10-05 | Advance Micro Devices, Inc. | Asymmetrical double gate or all-around gate MOSFET devices and methods for making same |
US6764884B1 (en) * | 2003-04-03 | 2004-07-20 | Advanced Micro Devices, Inc. | Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device |
US7456476B2 (en) * | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US6897111B2 (en) | 2003-07-28 | 2005-05-24 | Chartered Semiconductor Manufacturing Ltd. | Method using quasi-planar double gated fin field effect transistor process for the fabrication of a thyristor-based static read/write random-access memory |
JP2005086024A (ja) * | 2003-09-09 | 2005-03-31 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2005142289A (ja) * | 2003-11-05 | 2005-06-02 | Toshiba Corp | 半導体記憶装置 |
JP3962009B2 (ja) * | 2003-12-05 | 2007-08-22 | 株式会社東芝 | 半導体装置の製造方法 |
US7115947B2 (en) * | 2004-03-18 | 2006-10-03 | International Business Machines Corporation | Multiple dielectric finfet structure and method |
US7154118B2 (en) * | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
US7176092B2 (en) * | 2004-04-16 | 2007-02-13 | Taiwan Semiconductor Manufacturing Company | Gate electrode for a semiconductor fin device |
US7148540B2 (en) * | 2004-06-28 | 2006-12-12 | Agere Systems Inc. | Graded conductive structure for use in a metal-oxide-semiconductor device |
US20060071270A1 (en) * | 2004-09-29 | 2006-04-06 | Shibib Muhammed A | Metal-oxide-semiconductor device having trenched diffusion region and method of forming same |
EP1693898B1 (de) * | 2005-02-21 | 2008-04-16 | Interuniversitair Microelektronica Centrum ( Imec) | Halbleiterspeicherbauelement mit schwebendem Körper und Herstellungsverfahren desselben |
US7176537B2 (en) * | 2005-05-23 | 2007-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance CMOS with metal-gate and Schottky source/drain |
US7348642B2 (en) * | 2005-08-03 | 2008-03-25 | International Business Machines Corporation | Fin-type field effect transistor |
-
2005
- 2005-08-03 US US11/161,442 patent/US7348642B2/en active Active
-
2006
- 2006-07-21 CN CN2006800285758A patent/CN101443912B/zh active Active
- 2006-07-21 EP EP06788172A patent/EP1920467B1/de active Active
- 2006-07-21 KR KR1020087004466A patent/KR101027173B1/ko active IP Right Grant
- 2006-07-21 JP JP2008525007A patent/JP5220604B2/ja not_active Expired - Fee Related
- 2006-07-21 WO PCT/US2006/028465 patent/WO2007019023A2/en active Application Filing
- 2006-07-21 AT AT06788172T patent/ATE544182T1/de active
- 2006-08-02 TW TW095128273A patent/TWI397999B/zh active
-
2007
- 2007-12-13 US US11/955,579 patent/US8129773B2/en active Active
-
2008
- 2008-01-10 US US11/972,412 patent/US8106439B2/en active Active
-
2012
- 2012-01-30 US US13/361,050 patent/US8524547B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP5220604B2 (ja) | 2013-06-26 |
EP1920467A4 (de) | 2011-03-02 |
WO2007019023A3 (en) | 2008-11-13 |
EP1920467A2 (de) | 2008-05-14 |
KR101027173B1 (ko) | 2011-04-05 |
US20080124868A1 (en) | 2008-05-29 |
CN101443912A (zh) | 2009-05-27 |
US20080087968A1 (en) | 2008-04-17 |
EP1920467B1 (de) | 2012-02-01 |
WO2007019023A2 (en) | 2007-02-15 |
US8524547B2 (en) | 2013-09-03 |
KR20080030110A (ko) | 2008-04-03 |
US20120129304A1 (en) | 2012-05-24 |
US7348642B2 (en) | 2008-03-25 |
US8129773B2 (en) | 2012-03-06 |
US8106439B2 (en) | 2012-01-31 |
JP2009503893A (ja) | 2009-01-29 |
CN101443912B (zh) | 2011-03-23 |
TWI397999B (zh) | 2013-06-01 |
US20070029624A1 (en) | 2007-02-08 |
TW200717805A (en) | 2007-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE544182T1 (de) | Feldeffekttransistor des fin-typs | |
WO2005057615A3 (en) | Closed cell trench metal-oxide-semiconductor field effect transistor | |
TW200715562A (en) | Thin film transistor substrate and fabrication thereof | |
ATE461526T1 (de) | Hochdichtes finfet-integrationsverfahren | |
WO2009012295A3 (en) | Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure | |
JP6109931B2 (ja) | 高電圧接合型電界効果トランジスタ | |
WO2009055173A3 (en) | Floating body field-effect transistors, and methods of forming floating body field-effect transistors | |
WO2007007273A3 (en) | Ldmos transistor | |
WO2008033982A3 (en) | Field effect transistor with raised source/drain fin straps | |
ATE534140T1 (de) | Finfet-basierte nichtflüchtige speichervorrichtung | |
JP2004241755A5 (de) | ||
ATE463840T1 (de) | Transistor mit verbessertem spitzenprofil und herstellungsverfahren dafür | |
US20130193513A1 (en) | Multi-Gate Field Effect Transistor with a Tapered Gate Profile | |
WO2009105466A3 (en) | Reduced leakage current field-effect transistor having asymmetric doping and fabrication method therefor | |
WO2006138404A3 (en) | Short channel semiconductor device fabrication | |
TWI268557B (en) | Semiconductor device, accumulation mode multiple-gate transistor and methods of fabricating the same | |
TW200629427A (en) | Transistor structure and method of manufacturing thereof | |
JP2008103737A5 (de) | ||
JP2013509731A5 (de) | ||
TW200608580A (en) | Semiconductor device | |
WO2006040548A3 (en) | Organic transistor | |
TW200723549A (en) | Dual gate electrode metal oxide semiconductor transistors | |
JP2006173538A (ja) | 半導体装置 | |
TW200733386A (en) | Semiconductor device | |
TW200634996A (en) | Method of fabricating flash memory device |