JP2008103737A5 - - Google Patents

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Publication number
JP2008103737A5
JP2008103737A5 JP2007275917A JP2007275917A JP2008103737A5 JP 2008103737 A5 JP2008103737 A5 JP 2008103737A5 JP 2007275917 A JP2007275917 A JP 2007275917A JP 2007275917 A JP2007275917 A JP 2007275917A JP 2008103737 A5 JP2008103737 A5 JP 2008103737A5
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JP
Japan
Prior art keywords
region
silicide
gate electrode
channel
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007275917A
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English (en)
Japanese (ja)
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JP2008103737A (ja
JP4499774B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007275917A priority Critical patent/JP4499774B2/ja
Priority claimed from JP2007275917A external-priority patent/JP4499774B2/ja
Publication of JP2008103737A publication Critical patent/JP2008103737A/ja
Publication of JP2008103737A5 publication Critical patent/JP2008103737A5/ja
Application granted granted Critical
Publication of JP4499774B2 publication Critical patent/JP4499774B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007275917A 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置 Expired - Fee Related JP4499774B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007275917A JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007275917A JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP26921596A Division JP4103968B2 (ja) 1996-09-18 1996-09-18 絶縁ゲイト型半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009164391A Division JP4515530B2 (ja) 2009-07-13 2009-07-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2008103737A JP2008103737A (ja) 2008-05-01
JP2008103737A5 true JP2008103737A5 (de) 2009-06-04
JP4499774B2 JP4499774B2 (ja) 2010-07-07

Family

ID=39437765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007275917A Expired - Fee Related JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

Country Status (1)

Country Link
JP (1) JP4499774B2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150036786A (ko) 2003-04-09 2015-04-07 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TWI519819B (zh) 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
TWI412067B (zh) 2004-02-06 2013-10-11 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
KR101524964B1 (ko) 2005-05-12 2015-06-01 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
KR101945171B1 (ko) * 2009-12-08 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326014B2 (ja) * 1994-07-14 2002-09-17 株式会社半導体エネルギー研究所 薄膜半導体装置

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