JP4499774B2 - 絶縁ゲイト型半導体装置 - Google Patents
絶縁ゲイト型半導体装置 Download PDFInfo
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- JP4499774B2 JP4499774B2 JP2007275917A JP2007275917A JP4499774B2 JP 4499774 B2 JP4499774 B2 JP 4499774B2 JP 2007275917 A JP2007275917 A JP 2007275917A JP 2007275917 A JP2007275917 A JP 2007275917A JP 4499774 B2 JP4499774 B2 JP 4499774B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007275917A JP4499774B2 (ja) | 2007-10-24 | 2007-10-24 | 絶縁ゲイト型半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007275917A JP4499774B2 (ja) | 2007-10-24 | 2007-10-24 | 絶縁ゲイト型半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26921596A Division JP4103968B2 (ja) | 1996-09-18 | 1996-09-18 | 絶縁ゲイト型半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009164391A Division JP4515530B2 (ja) | 2009-07-13 | 2009-07-13 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008103737A JP2008103737A (ja) | 2008-05-01 |
| JP2008103737A5 JP2008103737A5 (de) | 2009-06-04 |
| JP4499774B2 true JP4499774B2 (ja) | 2010-07-07 |
Family
ID=39437765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007275917A Expired - Fee Related JP4499774B2 (ja) | 2007-10-24 | 2007-10-24 | 絶縁ゲイト型半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4499774B2 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4735258B2 (ja) | 2003-04-09 | 2011-07-27 | 株式会社ニコン | 露光方法及び装置、並びにデバイス製造方法 |
| TW201834020A (zh) | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
| TW201809801A (zh) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
| TW201809727A (zh) | 2004-02-06 | 2018-03-16 | 日商尼康股份有限公司 | 偏光變換元件 |
| KR101504765B1 (ko) | 2005-05-12 | 2015-03-30 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
| JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| KR101945171B1 (ko) * | 2009-12-08 | 2019-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9673823B2 (en) | 2011-05-18 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0832081A (ja) * | 1994-07-14 | 1996-02-02 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置 |
-
2007
- 2007-10-24 JP JP2007275917A patent/JP4499774B2/ja not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0832081A (ja) * | 1994-07-14 | 1996-02-02 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008103737A (ja) | 2008-05-01 |
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