SG10201408141WA - Floating body field-effect transistors, and methods of forming floating body field-effect transistors - Google Patents

Floating body field-effect transistors, and methods of forming floating body field-effect transistors

Info

Publication number
SG10201408141WA
SG10201408141WA SG10201408141WA SG10201408141WA SG10201408141WA SG 10201408141W A SG10201408141W A SG 10201408141WA SG 10201408141W A SG10201408141W A SG 10201408141WA SG 10201408141W A SG10201408141W A SG 10201408141WA SG 10201408141W A SG10201408141W A SG 10201408141WA
Authority
SG
Singapore
Prior art keywords
floating body
effect transistors
body field
region
channel region
Prior art date
Application number
SG10201408141WA
Inventor
Jun Liu
Di Li
Michael P Violette
Chandra Mouli
Howard Kirsh
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG10201408141WA publication Critical patent/SG10201408141WA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

28 FLOATING BODY FIELD-EFFECT TRANSISTORS, AND METHODS OF FORMING FLOATING BODY In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1_X)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1_X)-comprising region and the gate dielectric. The semiconductor SixGe(1_X)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field- effect transistors. FIGURE 5
SG10201408141WA 2007-10-26 2008-09-19 Floating body field-effect transistors, and methods of forming floating body field-effect transistors SG10201408141WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/925,573 US7948008B2 (en) 2007-10-26 2007-10-26 Floating body field-effect transistors, and methods of forming floating body field-effect transistors

Publications (1)

Publication Number Publication Date
SG10201408141WA true SG10201408141WA (en) 2015-01-29

Family

ID=40580312

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012077806A SG185319A1 (en) 2007-10-26 2008-09-19 Floating body field-effect transistors, and methods of forming floating body field-effect transistors
SG10201408141WA SG10201408141WA (en) 2007-10-26 2008-09-19 Floating body field-effect transistors, and methods of forming floating body field-effect transistors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012077806A SG185319A1 (en) 2007-10-26 2008-09-19 Floating body field-effect transistors, and methods of forming floating body field-effect transistors

Country Status (6)

Country Link
US (3) US7948008B2 (en)
EP (1) EP2206143B1 (en)
KR (1) KR101145043B1 (en)
SG (2) SG185319A1 (en)
TW (1) TWI384624B (en)
WO (1) WO2009055173A2 (en)

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Also Published As

Publication number Publication date
US20110193165A1 (en) 2011-08-11
EP2206143A2 (en) 2010-07-14
WO2009055173A2 (en) 2009-04-30
US8716075B2 (en) 2014-05-06
TW200926411A (en) 2009-06-16
EP2206143A4 (en) 2012-04-18
WO2009055173A3 (en) 2009-06-11
SG185319A1 (en) 2012-11-29
KR20100084562A (en) 2010-07-26
EP2206143B1 (en) 2018-08-08
US8395214B2 (en) 2013-03-12
TWI384624B (en) 2013-02-01
KR101145043B1 (en) 2012-05-11
US20090108292A1 (en) 2009-04-30
US20140051214A1 (en) 2014-02-20
US7948008B2 (en) 2011-05-24

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