KR101027173B1 - 핀형 전계 효과 트랜지스터 - Google Patents

핀형 전계 효과 트랜지스터 Download PDF

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Publication number
KR101027173B1
KR101027173B1 KR1020087004466A KR20087004466A KR101027173B1 KR 101027173 B1 KR101027173 B1 KR 101027173B1 KR 1020087004466 A KR1020087004466 A KR 1020087004466A KR 20087004466 A KR20087004466 A KR 20087004466A KR 101027173 B1 KR101027173 B1 KR 101027173B1
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South Korea
Prior art keywords
gate conductor
drain region
fin
source region
semiconductor
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Expired - Fee Related
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Korean (ko)
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KR20080030110A (ko
Inventor
에드워드 제이 노왁
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인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6217—Fin field-effect transistors [FinFET] having non-uniform gate electrodes, e.g. gate conductors having varying doping

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
KR1020087004466A 2005-08-03 2006-07-21 핀형 전계 효과 트랜지스터 Expired - Fee Related KR101027173B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/161,442 US7348642B2 (en) 2005-08-03 2005-08-03 Fin-type field effect transistor
US11/161,442 2005-08-03

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KR20080030110A KR20080030110A (ko) 2008-04-03
KR101027173B1 true KR101027173B1 (ko) 2011-04-05

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KR1020087004466A Expired - Fee Related KR101027173B1 (ko) 2005-08-03 2006-07-21 핀형 전계 효과 트랜지스터

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US (4) US7348642B2 (enExample)
EP (1) EP1920467B1 (enExample)
JP (1) JP5220604B2 (enExample)
KR (1) KR101027173B1 (enExample)
CN (1) CN101443912B (enExample)
AT (1) ATE544182T1 (enExample)
TW (1) TWI397999B (enExample)
WO (1) WO2007019023A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101859587B1 (ko) 2016-12-30 2018-05-18 서울시립대학교 산학협력단 네거티브 캐패시턴스 핀펫 소자 및 제조 방법

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JP2009503893A (ja) 2009-01-29
TW200717805A (en) 2007-05-01
US8524547B2 (en) 2013-09-03
ATE544182T1 (de) 2012-02-15
CN101443912B (zh) 2011-03-23
CN101443912A (zh) 2009-05-27
JP5220604B2 (ja) 2013-06-26
EP1920467A4 (en) 2011-03-02
US8129773B2 (en) 2012-03-06
US8106439B2 (en) 2012-01-31
TWI397999B (zh) 2013-06-01
EP1920467A2 (en) 2008-05-14
US20070029624A1 (en) 2007-02-08
US20080124868A1 (en) 2008-05-29
US20120129304A1 (en) 2012-05-24
US20080087968A1 (en) 2008-04-17
WO2007019023A3 (en) 2008-11-13
KR20080030110A (ko) 2008-04-03
US7348642B2 (en) 2008-03-25
WO2007019023A2 (en) 2007-02-15
EP1920467B1 (en) 2012-02-01

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