ATE539346T1 - Verfahren zur enthüllung von kristallinen defekten in einem massiven substrat - Google Patents
Verfahren zur enthüllung von kristallinen defekten in einem massiven substratInfo
- Publication number
- ATE539346T1 ATE539346T1 AT07105297T AT07105297T ATE539346T1 AT E539346 T1 ATE539346 T1 AT E539346T1 AT 07105297 T AT07105297 T AT 07105297T AT 07105297 T AT07105297 T AT 07105297T AT E539346 T1 ATE539346 T1 AT E539346T1
- Authority
- AT
- Austria
- Prior art keywords
- revealing
- carried out
- heat treatment
- bulk
- stage
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 14
- 238000000034 method Methods 0.000 title abstract 5
- 239000007787 solid Substances 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 9
- 238000010438 heat treatment Methods 0.000 abstract 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 239000007789 gas Substances 0.000 abstract 5
- 230000003647 oxidation Effects 0.000 abstract 5
- 238000007254 oxidation reaction Methods 0.000 abstract 5
- 229910052786 argon Inorganic materials 0.000 abstract 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 4
- 239000001301 oxygen Substances 0.000 abstract 4
- 229910052760 oxygen Inorganic materials 0.000 abstract 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 238000004151 rapid thermal annealing Methods 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 238000009279 wet oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0602786A FR2899380B1 (fr) | 2006-03-31 | 2006-03-31 | Procede de revelation de defauts cristallins dans un substrat massif. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE539346T1 true ATE539346T1 (de) | 2012-01-15 |
Family
ID=37081642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07105297T ATE539346T1 (de) | 2006-03-31 | 2007-03-30 | Verfahren zur enthüllung von kristallinen defekten in einem massiven substrat |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7413964B2 (de) |
| EP (1) | EP1840560B1 (de) |
| JP (1) | JP5032168B2 (de) |
| KR (1) | KR100821970B1 (de) |
| CN (1) | CN101055847B (de) |
| AT (1) | ATE539346T1 (de) |
| FR (1) | FR2899380B1 (de) |
| SG (1) | SG136098A1 (de) |
| TW (1) | TWI383469B (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006054350A (ja) * | 2004-08-12 | 2006-02-23 | Komatsu Electronic Metals Co Ltd | 窒素ドープシリコンウェーハとその製造方法 |
| US8173449B2 (en) * | 2006-06-09 | 2012-05-08 | Sumco Corporation | Method for making COP evaluation on single-crystal silicon wafer |
| JP5167654B2 (ja) * | 2007-02-26 | 2013-03-21 | 信越半導体株式会社 | シリコン単結晶ウエーハの製造方法 |
| JP5728153B2 (ja) * | 2008-09-26 | 2015-06-03 | 株式会社東芝 | 半導体装置の製造方法 |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| SG166060A1 (en) | 2009-04-22 | 2010-11-29 | Semiconductor Energy Lab | Method of manufacturing soi substrate |
| US8318588B2 (en) * | 2009-08-25 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| SG178179A1 (en) * | 2009-10-09 | 2012-03-29 | Semiconductor Energy Lab | Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate |
| US8367517B2 (en) * | 2010-01-26 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| US9123529B2 (en) | 2011-06-21 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| FR2977974B1 (fr) * | 2011-07-13 | 2014-03-07 | Soitec Silicon On Insulator | Procede de mesure de defauts dans un substrat de silicium |
| JP5440564B2 (ja) | 2011-07-14 | 2014-03-12 | 信越半導体株式会社 | 結晶欠陥の検出方法 |
| US9343379B2 (en) * | 2011-10-14 | 2016-05-17 | Sunedison Semiconductor Limited | Method to delineate crystal related defects |
| FR2987682B1 (fr) | 2012-03-05 | 2014-11-21 | Soitec Silicon On Insulator | Procede de test d'une structure semi-conducteur sur isolant et application dudit test pour la fabrication d'une telle structure |
| FR2999801B1 (fr) | 2012-12-14 | 2014-12-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure |
| CN104201093B (zh) * | 2014-08-08 | 2017-02-01 | 上海华力微电子有限公司 | 湿法清洗工艺设备颗粒监控方法 |
| JP6627800B2 (ja) * | 2017-02-21 | 2020-01-08 | 信越半導体株式会社 | シリコン単結晶ウエハの欠陥領域判定方法 |
| JP6380582B1 (ja) * | 2017-03-08 | 2018-08-29 | 株式会社Sumco | エピタキシャルウェーハの裏面検査方法、エピタキシャルウェーハ裏面検査装置、エピタキシャル成長装置のリフトピン管理方法およびエピタキシャルウェーハの製造方法 |
| CN113394126A (zh) * | 2021-04-15 | 2021-09-14 | 上海新昇半导体科技有限公司 | 一种检测半导体材料中缺陷的方法 |
| CN113421944B (zh) * | 2021-05-18 | 2022-08-23 | 平煤隆基新能源科技有限公司 | 一种提高晶硅太阳能电池转换效率的氧化退火工艺 |
| CN113818079A (zh) * | 2021-08-06 | 2021-12-21 | 西南技术物理研究所 | 一种Ho：BYF单晶生长用气氛系统 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD221308A1 (de) | 1983-12-16 | 1985-04-17 | Adw Ddr | Verfahren zur charakterisierung sauerstoffinduzierter defekte in silizium |
| JPH0684925A (ja) * | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
| JPH08111444A (ja) * | 1994-10-11 | 1996-04-30 | Kawasaki Steel Corp | 半導体基板用シリコンウェハの原子空孔分布評価法 |
| US5611855A (en) * | 1995-01-31 | 1997-03-18 | Seh America, Inc. | Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth |
| JP3955674B2 (ja) * | 1998-03-19 | 2007-08-08 | 株式会社東芝 | 半導体ウェーハの製造方法及び半導体装置の製造方法 |
| WO1999057344A1 (fr) * | 1998-05-01 | 1999-11-11 | Nippon Steel Corporation | Plaquette de semi-conducteur en silicium et son procede de fabrication |
| US6413310B1 (en) * | 1998-08-31 | 2002-07-02 | Shin-Etsu Handotai Co., Ltd. | Method for producing silicon single crystal wafer and silicon single crystal wafer |
| EP1114454A2 (de) * | 1998-09-02 | 2001-07-11 | MEMC Electronic Materials, Inc. | Silizium auf isolator struktur aus einem einkristallsilizium mit niedriger fehlerdichte |
| US6573159B1 (en) * | 1998-12-28 | 2003-06-03 | Shin-Etsu Handotai Co., Ltd. | Method for thermally annealing silicon wafer and silicon wafer |
| JP2000269288A (ja) * | 1999-03-15 | 2000-09-29 | Shin Etsu Handotai Co Ltd | シリコンウエーハの結晶欠陥検出法および結晶欠陥評価法ならびに酸化膜耐圧特性評価法 |
| KR100730806B1 (ko) * | 1999-10-14 | 2007-06-20 | 신에쯔 한도타이 가부시키가이샤 | Ｓｏｉ웨이퍼의 제조방법 및 ｓｏｉ 웨이퍼 |
| TW473894B (en) * | 1999-12-24 | 2002-01-21 | Shinetsu Handotai Kk | Inspecting device for crystal defect of silicon wafer and method for detecting crystal defect of the same |
| KR100368331B1 (ko) * | 2000-10-04 | 2003-01-24 | 주식회사 실트론 | 반도체 웨이퍼의 열처리 방법 및 이를 통해 제조된 반도체 웨이퍼 |
| JP4463957B2 (ja) * | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | シリコンウエーハの製造方法およびシリコンウエーハ |
| JP2002184779A (ja) * | 2000-12-13 | 2002-06-28 | Shin Etsu Handotai Co Ltd | アニールウェーハの製造方法及びアニールウェーハ |
| JP2002353282A (ja) * | 2001-05-30 | 2002-12-06 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウェーハ中の窒素濃度の評価方法 |
| JP2003059932A (ja) * | 2001-08-08 | 2003-02-28 | Toshiba Ceramics Co Ltd | シリコン単結晶ウエハの製造方法およびシリコン単結晶ウエハ |
| US7129123B2 (en) * | 2002-08-27 | 2006-10-31 | Shin-Etsu Handotai Co., Ltd. | SOI wafer and a method for producing an SOI wafer |
| JP4380141B2 (ja) * | 2002-10-31 | 2009-12-09 | 信越半導体株式会社 | シリコンウェーハの評価方法 |
| JP4794810B2 (ja) * | 2003-03-20 | 2011-10-19 | シャープ株式会社 | 半導体装置の製造方法 |
| JP4670224B2 (ja) * | 2003-04-01 | 2011-04-13 | 株式会社Ｓｕｍｃｏ | シリコンウェーハの製造方法 |
| GB0308182D0 (en) * | 2003-04-09 | 2003-05-14 | Aoti Operating Co Inc | Detection method and apparatus |
| JP4281451B2 (ja) | 2003-07-17 | 2009-06-17 | 株式会社大真空 | 圧電振動片および圧電振動子 |
| JP4653948B2 (ja) | 2003-11-26 | 2011-03-16 | 信越半導体株式会社 | エピタキシャルウエーハ用シリコン単結晶の検査方法及びエピタキシャルウエーハ用シリコンウエーハの製造方法、並びにエピタキシャルウエーハの製造方法 |
| JP2005162599A (ja) * | 2003-12-03 | 2005-06-23 | Siltron Inc | 均一なベイカンシ欠陥を有するシリコン単結晶インゴット、シリコンウエハ、シリコン単結晶インゴットの製造装置、及びシリコン単結晶インゴットの製造方法 |
| DE102005028202B4 (de) * | 2005-06-17 | 2010-04-15 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus Silizium |
-
2006
- 2006-03-31 FR FR0602786A patent/FR2899380B1/fr active Active
- 2006-07-05 US US11/481,691 patent/US7413964B2/en active Active
-
2007
- 2007-02-09 TW TW096104923A patent/TWI383469B/zh active
- 2007-02-23 KR KR1020070018608A patent/KR100821970B1/ko active IP Right Grant
- 2007-02-26 CN CN2007100787657A patent/CN101055847B/zh active Active
- 2007-03-20 JP JP2007072478A patent/JP5032168B2/ja active Active
- 2007-03-26 SG SG200702231-2A patent/SG136098A1/en unknown
- 2007-03-30 EP EP07105297A patent/EP1840560B1/de active Active
- 2007-03-30 AT AT07105297T patent/ATE539346T1/de active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1840560B1 (de) | 2011-12-28 |
| CN101055847B (zh) | 2010-07-21 |
| TW200739801A (en) | 2007-10-16 |
| FR2899380A1 (fr) | 2007-10-05 |
| US7413964B2 (en) | 2008-08-19 |
| KR20070098489A (ko) | 2007-10-05 |
| EP1840560A2 (de) | 2007-10-03 |
| FR2899380B1 (fr) | 2008-08-29 |
| JP2007273977A (ja) | 2007-10-18 |
| KR100821970B1 (ko) | 2008-04-15 |
| CN101055847A (zh) | 2007-10-17 |
| EP1840560A3 (de) | 2009-07-01 |
| JP5032168B2 (ja) | 2012-09-26 |
| US20070231932A1 (en) | 2007-10-04 |
| SG136098A1 (en) | 2007-10-29 |
| TWI383469B (zh) | 2013-01-21 |
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