JP4827587B2 - シリコンウェーハの製造方法 - Google Patents
シリコンウェーハの製造方法 Download PDFInfo
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- JP4827587B2 JP4827587B2 JP2006100921A JP2006100921A JP4827587B2 JP 4827587 B2 JP4827587 B2 JP 4827587B2 JP 2006100921 A JP2006100921 A JP 2006100921A JP 2006100921 A JP2006100921 A JP 2006100921A JP 4827587 B2 JP4827587 B2 JP 4827587B2
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- silicon wafer
- hydrofluoric acid
- back surface
- treatment
- cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Description
図2は、半導体ウェーハ(シリコン単結晶ウェーハ)12のオモテ面側にエピタキシャル層を形成する方法を模式的に図解する。成長用のガスが左から右へと主に半導体ウェーハ12のオモテ面側を流れる。また、半導体ウェーハはランプ8によりオモテ面より加熱される。従って、成長用ガスの代わりに水素を流す水素熱処理では、オモテ面側の反応は促進されるが、ウラ面は、サセプタその他の器具により覆われやすく、反応性ガスの水素供給及び反応速度を上昇させる熱量がオモテ面に比べ少ないことが予想される。
次に、実際に行った実験の内容を説明する。径が200mm及び300mmの両面を鏡面に仕上げたシリコン単結晶ウェーハを準備し、図3及び4に示す工程をそれぞれ行った。ここで、図3のフッ酸(HF)処理(S8)は、1%程度の希フッ酸中にシリコンウェーハを数秒から数十秒間浸漬することにより行った。また、純水(DIW)処理(S10)は、純水をシリコンウェーハにシャワーして洗い流すことにより行った。ステップ12では、上述するような条件でエピタキシャル層の成長を行った。尚、上述のフッ酸処理(S8)は、シリコンウェーハのウラ面に1%程度の希フッ酸をかけるスピン洗浄によっても行っており、以下の評価結果には具体的にプロットしていないが、ほぼ同様な結果を得ている。
4 サセプタ
8、9 熱源
12 半導体ウェーハ
13 ポケット
31 テーパ面
32 棚
Claims (3)
- オモテ面及びウラ面が鏡面仕上げされたシリコンウェーハを洗浄する前洗浄工程と、急速昇降温加熱(RTP)炉工程又はエピタキシャル成長工程と、を含むシリコンウェーハの製造方法において、
前記前洗浄工程は、
前記鏡面仕上げ後、前記シリコンウェーハを浸漬によりオゾン水処理する工程と、
前記シリコンウェーハを浸漬によりフッ酸処理する第1のフッ酸処理工程と、
前記シリコンウェーハを浸漬によりオゾン水処理する工程と、
前記シリコンウェーハのウラ面のみをフッ酸(HF)処理する第2のフッ酸処理工程と、
前記シリコンウェーハのウラ面のみをシャワーにより純水(DIW)処理する工程と、を含み、この順で処理されるが、
前記フッ酸(HF)処理する第2のフッ酸処理工程及び引き続く前記純水(DIW)処理する工程を前記前洗浄工程の最終工程とし、
前記急速昇降温加熱(RTP)炉工程又はエピタキシャル成長工程を続けて行うことを特徴とするシリコンウェーハの製造方法。 - 前記フッ酸(HF)処理する第2のフッ酸処理工程は、ウラ面にフッ酸の蒸気を吹き付けることにより行うことを特徴とする請求項1記載のシリコンウェーハの製造方法。
- 前記前洗浄工程に続き、前記前洗浄工程において形成された保護酸化膜を急速昇高温条件下にて除去してから前記急速昇降温加熱(RTP)炉工程を行うことを特徴とする請求項1又は2のシリコンウェーハの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006100921A JP4827587B2 (ja) | 2006-03-31 | 2006-03-31 | シリコンウェーハの製造方法 |
TW096109741A TW200741852A (en) | 2006-03-31 | 2007-03-21 | Method of manufacturing epitaxial silicon wafer |
US11/731,268 US7993452B2 (en) | 2006-03-31 | 2007-03-30 | Method of manufacturing epitaxial silicon wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006100921A JP4827587B2 (ja) | 2006-03-31 | 2006-03-31 | シリコンウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007273911A JP2007273911A (ja) | 2007-10-18 |
JP4827587B2 true JP4827587B2 (ja) | 2011-11-30 |
Family
ID=38557582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006100921A Active JP4827587B2 (ja) | 2006-03-31 | 2006-03-31 | シリコンウェーハの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7993452B2 (ja) |
JP (1) | JP4827587B2 (ja) |
TW (1) | TW200741852A (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8741066B2 (en) | 2007-02-16 | 2014-06-03 | Akrion Systems, Llc | Method for cleaning substrates utilizing surface passivation and/or oxide layer growth to protect from pitting |
US7727782B2 (en) * | 2007-06-25 | 2010-06-01 | Applied Materials, Inc. | Apparatus for improving incoming and outgoing wafer inspection productivity in a wafer reclaim factory |
US20080318343A1 (en) * | 2007-06-25 | 2008-12-25 | Krishna Vepa | Wafer reclaim method based on wafer type |
US7775856B2 (en) * | 2007-09-27 | 2010-08-17 | Applied Materials, Inc. | Method for removal of surface films from reclaim substrates |
US8664092B2 (en) | 2009-06-26 | 2014-03-04 | Sumco Corporation | Method for cleaning silicon wafer, and method for producing epitaxial wafer using the cleaning method |
JP4831216B2 (ja) * | 2009-07-28 | 2011-12-07 | 株式会社Sumco | ウェーハ表面処理方法 |
JP5589968B2 (ja) * | 2011-06-17 | 2014-09-17 | 信越半導体株式会社 | 半導体ウェーハの洗浄方法 |
CN103745925A (zh) * | 2013-11-14 | 2014-04-23 | 上海和辉光电有限公司 | 一种平坦化多晶硅薄膜的制造方法 |
CN104779139A (zh) * | 2015-03-31 | 2015-07-15 | 深超光电(深圳)有限公司 | 半导体薄膜的制造方法及薄膜晶体管的制造方法 |
CN108269733A (zh) * | 2017-12-19 | 2018-07-10 | 君泰创新(北京)科技有限公司 | 一种硅片清洗方法 |
JP6988761B2 (ja) * | 2018-10-11 | 2022-01-05 | 信越半導体株式会社 | 半導体シリコンウェーハの洗浄処理装置および洗浄方法 |
CN113658851A (zh) * | 2021-07-27 | 2021-11-16 | 上海中欣晶圆半导体科技有限公司 | 一种单片式硅片使用有机酸的清洗方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103678B2 (ja) * | 1987-11-28 | 1994-12-14 | 株式会社東芝 | 半導体基板の加工方法 |
US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
TW350112B (en) * | 1996-12-27 | 1999-01-11 | Komatsu Denshi Kinzoku Kk | Silicon wafer evaluation method |
JPH11168106A (ja) * | 1997-09-30 | 1999-06-22 | Fujitsu Ltd | 半導体基板の処理方法 |
JPH11274162A (ja) | 1998-03-19 | 1999-10-08 | Sumitomo Metal Ind Ltd | 半導体基板とその製造方法 |
JP4573282B2 (ja) | 2000-07-03 | 2010-11-04 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
DE60115078T2 (de) * | 2000-09-19 | 2006-07-27 | Memc Electronic Materials, Inc. | Mit stickstoff dotiertes silizium das wesentlich frei von oxidationsinduzierten stapelfehlern ist |
JP2004119446A (ja) | 2002-09-24 | 2004-04-15 | Shin Etsu Handotai Co Ltd | アニールウエーハの製造方法及びアニールウエーハ |
JP4292872B2 (ja) | 2003-05-29 | 2009-07-08 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
WO2005057640A1 (ja) * | 2003-12-11 | 2005-06-23 | Sumco Corporation | エピタキシャルウェーハおよびその製造方法 |
JP4228914B2 (ja) | 2003-12-26 | 2009-02-25 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
JP4164816B2 (ja) | 2004-02-27 | 2008-10-15 | 株式会社Sumco | エピタキシャルウェーハの製造方法 |
JP2005311053A (ja) | 2004-04-21 | 2005-11-04 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハの製造方法及び洗浄装置 |
JP4824926B2 (ja) * | 2004-12-24 | 2011-11-30 | Sumco Techxiv株式会社 | エピタキシャルシリコンウェハの製造方法 |
-
2006
- 2006-03-31 JP JP2006100921A patent/JP4827587B2/ja active Active
-
2007
- 2007-03-21 TW TW096109741A patent/TW200741852A/zh unknown
- 2007-03-30 US US11/731,268 patent/US7993452B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200741852A (en) | 2007-11-01 |
US20070228524A1 (en) | 2007-10-04 |
US7993452B2 (en) | 2011-08-09 |
JP2007273911A (ja) | 2007-10-18 |
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