ATE522643T1 - Verfahren zum züchten eines gan-einzelkristalls, verfahren zur herstellung eines gan-substrats, verfahren zur herstellung eines elements auf gan- basis und element auf gan-basis - Google Patents

Verfahren zum züchten eines gan-einzelkristalls, verfahren zur herstellung eines gan-substrats, verfahren zur herstellung eines elements auf gan- basis und element auf gan-basis

Info

Publication number
ATE522643T1
ATE522643T1 AT10156004T AT10156004T ATE522643T1 AT E522643 T1 ATE522643 T1 AT E522643T1 AT 10156004 T AT10156004 T AT 10156004T AT 10156004 T AT10156004 T AT 10156004T AT E522643 T1 ATE522643 T1 AT E522643T1
Authority
AT
Austria
Prior art keywords
gan
substrate
grown
producing
based element
Prior art date
Application number
AT10156004T
Other languages
English (en)
Inventor
Meoung-Whan Cho
Takafumi Yao
Original Assignee
Tohoku Techno Arch Co Ltd
Furukawa Co Ltd
Mitsubishi Chem Corp
Dowa Holdings Co Ltd
Epivalley Co Ltd
Wavesquare Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Techno Arch Co Ltd, Furukawa Co Ltd, Mitsubishi Chem Corp, Dowa Holdings Co Ltd, Epivalley Co Ltd, Wavesquare Inc filed Critical Tohoku Techno Arch Co Ltd
Application granted granted Critical
Publication of ATE522643T1 publication Critical patent/ATE522643T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
AT10156004T 2005-04-04 2006-03-31 Verfahren zum züchten eines gan-einzelkristalls, verfahren zur herstellung eines gan-substrats, verfahren zur herstellung eines elements auf gan- basis und element auf gan-basis ATE522643T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005108072 2005-04-04

Publications (1)

Publication Number Publication Date
ATE522643T1 true ATE522643T1 (de) 2011-09-15

Family

ID=37451762

Family Applications (5)

Application Number Title Priority Date Filing Date
AT10156004T ATE522643T1 (de) 2005-04-04 2006-03-31 Verfahren zum züchten eines gan-einzelkristalls, verfahren zur herstellung eines gan-substrats, verfahren zur herstellung eines elements auf gan- basis und element auf gan-basis
AT10156008T ATE545959T1 (de) 2005-04-04 2006-03-31 Verfahren zum züchten eines gan-einkristalls, verfahren zur herstellung eines gan-substrats, verfahren zur herstellung eines elements auf gan- basis und element auf gan-basis
AT10156009T ATE519232T1 (de) 2005-04-04 2006-03-31 Verfahren zur herstellung eines elements auf gan- basis
AT10156002T ATE527696T1 (de) 2005-04-04 2006-03-31 Verfahren zur herstellung eines elements auf gan- basis
AT06730906T ATE483043T1 (de) 2005-04-04 2006-03-31 Verfahren zur zucht von gan-einkristallen

Family Applications After (4)

Application Number Title Priority Date Filing Date
AT10156008T ATE545959T1 (de) 2005-04-04 2006-03-31 Verfahren zum züchten eines gan-einkristalls, verfahren zur herstellung eines gan-substrats, verfahren zur herstellung eines elements auf gan- basis und element auf gan-basis
AT10156009T ATE519232T1 (de) 2005-04-04 2006-03-31 Verfahren zur herstellung eines elements auf gan- basis
AT10156002T ATE527696T1 (de) 2005-04-04 2006-03-31 Verfahren zur herstellung eines elements auf gan- basis
AT06730906T ATE483043T1 (de) 2005-04-04 2006-03-31 Verfahren zur zucht von gan-einkristallen

Country Status (9)

Country Link
US (3) US20080261378A1 (de)
EP (8) EP2204477A1 (de)
JP (1) JP4172657B2 (de)
KR (1) KR100976268B1 (de)
CN (2) CN101180420B (de)
AT (5) ATE522643T1 (de)
DE (1) DE602006017195D1 (de)
TW (1) TWI390587B (de)
WO (1) WO2006126330A1 (de)

Families Citing this family (295)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4852755B2 (ja) * 2006-09-20 2012-01-11 国立大学法人東北大学 化合物半導体素子の製造方法
US7777240B2 (en) * 2006-10-17 2010-08-17 Epistar Corporation Optoelectronic device
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
JP4757834B2 (ja) * 2007-04-27 2011-08-24 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体およびその製造方法、ｉｉｉ族窒化物半導体製造用基板
JP4786587B2 (ja) * 2007-04-27 2011-10-05 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体およびその製造方法、ｉｉｉ族窒化物半導体製造用基板
JP5076094B2 (ja) * 2007-06-12 2012-11-21 株式会社 東北テクノアーチ Ｉｉｉ族窒化物単結晶の製造方法、金属窒化物層を有する下地結晶基板、および多層構造ウエハ
JP5060875B2 (ja) * 2007-08-28 2012-10-31 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体とその製造方法
KR101510377B1 (ko) * 2008-01-21 2015-04-06 엘지이노텍 주식회사 질화물 반도체 및 수직형 발광 소자의 제조방법
JP5014217B2 (ja) * 2008-03-18 2012-08-29 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体およびその製造方法
JP4247413B1 (ja) 2008-03-19 2009-04-02 株式会社 東北テクノアーチ デバイスの製造方法
KR101428719B1 (ko) * 2008-05-22 2014-08-12 삼성전자 주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을이용하여 제조한 발광 소자 및 발광 장치
KR101428088B1 (ko) * 2008-08-12 2014-08-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN102326228B (zh) 2008-12-26 2014-03-05 同和控股（集团）有限公司 第ⅲ族氮化物半导体生长基板、第ⅲ族氮化物半导体外延基板、第ⅲ族氮化物半导体元件、第ⅲ族氮化物半导体自立基板及它们的制造方法
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JP4461227B1 (ja) * 2009-03-31 2010-05-12 株式会社 東北テクノアーチ 半導体基板の製造方法
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