JP5994420B2 - Iii族窒化物半導体発光素子およびその製造方法 - Google Patents
Iii族窒化物半導体発光素子およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 145
- 150000004767 nitrides Chemical class 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000203 mixture Substances 0.000 claims description 42
- 229910002704 AlGaN Inorganic materials 0.000 claims description 28
- 238000000605 extraction Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 249
- 238000005253 cladding Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000002052 molecular layer Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- -1 TaTiO 2 Substances 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
11:nコンタクト層
13:nクラッド層
14:発光層
15:pクラッド層
16:pコンタクト層
17:n電極
18、118:半導体層
19:透明電極
20:p電極
Claims (3)
- pコンタクト層上に、前記pコンタクト層よりも発光波長における屈折率が小さい材料からなる透明電極を有し、この透明電極を通して透明電極側から光を外部に出力させるフェイスアップ型のIII 族窒化物半導体発光素子において、
前記pコンタクト層と前記透明電極との間であってその双方に接して位置し、前記pコンタクト層よりも発光波長における屈折率が小さく、かつ、前記透明電極よりも発光波長における屈折率が大きいとともに、MgドープのAlGaNからなる半導体層を有し、
前記pコンタクト層はGaNからなり、
前記透明電極はITOからなり、
前記発光波長は400〜500nmであり、
前記半導体層のAl組成比は10〜40%、厚さは5〜25Åであり、
前記半導体層のMg濃度は1×1020〜1×1021/cm3 であり、
前記pコンタクト層と前記半導体層との屈折率差が0.05〜0.2、前記半導体層と前記透明電極との屈折率差が0.15〜0.4の範囲であって、前記半導体層の屈折率を、前記pコンタクト層から前記透明電極に向かって段階的あるいは連続的に減少させることで、前記pコンタクト層と前記透明電極間の反射を抑制して光取り出し効率を向上させた
ことを特徴とするIII 族窒化物半導体発光素子。 - 前記半導体層の前記透明電極側表面に凹凸を有することを特徴とする請求項1に記載のIII 族窒化物半導体発光素子。
- pコンタクト層上に、前記pコンタクト層よりも発光波長における屈折率が小さい材料からなる透明電極を有し、この透明電極を通して透明電極側から光を外部に出力させるフェイスアップ型のIII 族窒化物半導体発光素子の製造方法において、
GaNからなるpコンタクト層の形成後、前記pコンタクト層上に接して、前記pコンタクト層よりも発光波長400〜500nmにおける屈折率が小さく、ITOからなる透明電極よりも発光波長における屈折率が大きく、前記pコンタクト層に対する屈折率差が0.05〜0.2、前記透明電極に対する屈折率差が0.15〜0.4の範囲内であって、かつ、屈折率が前記pコンタクト層から前記透明電極に向かって段階的あるいは連続的に減少していくとともに、Mgがドープされ、そのMg濃度が1×1020〜1×1021/cm3 であるAlGaNからなる半導体層を、Al組成比10〜40%、厚さ5〜25Å、成長温度800℃以下で形成すると共に、前記半導体層の前記透明電極側表面に凹凸を形成し、
その後、前記半導体層上に接して前記透明電極を形成する、
ことを特徴とするIII 族窒化物半導体発光素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2012139602A JP5994420B2 (ja) | 2012-06-21 | 2012-06-21 | Iii族窒化物半導体発光素子およびその製造方法 |
US13/921,094 US8816354B2 (en) | 2012-06-21 | 2013-06-18 | Group III nitride semiconductor light-emitting device and production method therefor |
CN201310244432.2A CN103515505A (zh) | 2012-06-21 | 2013-06-19 | 第iii族氮化物半导体发光器件及其制造方法 |
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JP2012139602A JP5994420B2 (ja) | 2012-06-21 | 2012-06-21 | Iii族窒化物半導体発光素子およびその製造方法 |
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JP2014007181A JP2014007181A (ja) | 2014-01-16 |
JP5994420B2 true JP5994420B2 (ja) | 2016-09-21 |
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US (1) | US8816354B2 (ja) |
JP (1) | JP5994420B2 (ja) |
CN (1) | CN103515505A (ja) |
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KR20130079873A (ko) * | 2012-01-03 | 2013-07-11 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 조명시스템 |
KR102075713B1 (ko) * | 2013-07-15 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US10804435B2 (en) * | 2016-08-25 | 2020-10-13 | Epistar Corporation | Light-emitting device |
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JP4149054B2 (ja) * | 1998-11-27 | 2008-09-10 | シャープ株式会社 | 半導体装置 |
JP2004119756A (ja) * | 2002-09-27 | 2004-04-15 | Fuji Photo Film Co Ltd | 発光ダイオード |
JP3920315B2 (ja) * | 2004-06-14 | 2007-05-30 | 三菱電線工業株式会社 | 窒化物系半導体発光素子 |
JP2006080469A (ja) * | 2004-09-13 | 2006-03-23 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光素子 |
JP2006080426A (ja) * | 2004-09-13 | 2006-03-23 | Sharp Corp | 発光ダイオード |
KR100631898B1 (ko) * | 2005-01-19 | 2006-10-11 | 삼성전기주식회사 | Esd보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법 |
KR100976268B1 (ko) * | 2005-04-04 | 2010-08-18 | 가부시키가이샤 토호쿠 테크노 아치 | GaN 단결정 성장방법, GaN 기판 제작방법, GaN계소자 제조방법 및 GaN계 소자 |
KR100609117B1 (ko) | 2005-05-03 | 2006-08-08 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
JP2007103712A (ja) | 2005-10-05 | 2007-04-19 | Arima Optoelectronics Corp | 高輝度のGaN系発光ダイオ−ド |
JP2007227832A (ja) * | 2006-02-27 | 2007-09-06 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子 |
TW200812113A (en) * | 2006-05-23 | 2008-03-01 | Alps Electric Co Ltd | Semiconductor light emitting element and method for manufacturing the same |
KR100755656B1 (ko) | 2006-08-11 | 2007-09-04 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
KR100869962B1 (ko) | 2006-12-07 | 2008-11-24 | 한국전자통신연구원 | 전류 확산층을 포함하는 발광소자의 제조방법 |
JP2009231549A (ja) * | 2008-03-24 | 2009-10-08 | Toyoda Gosei Co Ltd | 窒化物系半導体発光素子 |
US7989834B2 (en) * | 2008-04-30 | 2011-08-02 | Lg Innotek Co., Ltd. | Light emitting device and method for manufacturing the same |
JP2010040867A (ja) * | 2008-08-06 | 2010-02-18 | Showa Denko Kk | Iii族窒化物半導体積層構造体およびその製造方法 |
JP2011009502A (ja) * | 2009-06-26 | 2011-01-13 | Showa Denko Kk | 発光素子、その製造方法、ランプ、電子機器及び機械装置 |
JP5143214B2 (ja) * | 2010-11-29 | 2013-02-13 | 株式会社東芝 | 半導体発光素子 |
JP2013080827A (ja) * | 2011-10-04 | 2013-05-02 | Sharp Corp | 発光素子 |
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- 2012-06-21 JP JP2012139602A patent/JP5994420B2/ja active Active
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2013
- 2013-06-18 US US13/921,094 patent/US8816354B2/en active Active
- 2013-06-19 CN CN201310244432.2A patent/CN103515505A/zh active Pending
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US8816354B2 (en) | 2014-08-26 |
US20130341636A1 (en) | 2013-12-26 |
JP2014007181A (ja) | 2014-01-16 |
CN103515505A (zh) | 2014-01-15 |
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