ATE355545T1 - Maske und ein diese maske benutzendes herstellungsverfahren - Google Patents

Maske und ein diese maske benutzendes herstellungsverfahren

Info

Publication number
ATE355545T1
ATE355545T1 AT03740910T AT03740910T ATE355545T1 AT E355545 T1 ATE355545 T1 AT E355545T1 AT 03740910 T AT03740910 T AT 03740910T AT 03740910 T AT03740910 T AT 03740910T AT E355545 T1 ATE355545 T1 AT E355545T1
Authority
AT
Austria
Prior art keywords
mask
dependent
sub
production process
range
Prior art date
Application number
AT03740910T
Other languages
English (en)
Inventor
Ian D French
James Hewett
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE355545T1 publication Critical patent/ATE355545T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemically Coating (AREA)
  • Thin Film Transistor (AREA)
AT03740910T 2002-07-02 2003-06-13 Maske und ein diese maske benutzendes herstellungsverfahren ATE355545T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0215243.7A GB0215243D0 (en) 2002-07-02 2002-07-02 Mask and manufacturing method using mask

Publications (1)

Publication Number Publication Date
ATE355545T1 true ATE355545T1 (de) 2006-03-15

Family

ID=9939670

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03740910T ATE355545T1 (de) 2002-07-02 2003-06-13 Maske und ein diese maske benutzendes herstellungsverfahren

Country Status (10)

Country Link
US (1) US20060051974A1 (de)
EP (1) EP1520208B1 (de)
JP (1) JP2005531815A (de)
CN (1) CN100343757C (de)
AT (1) ATE355545T1 (de)
AU (1) AU2003281392A1 (de)
DE (1) DE60312166T2 (de)
GB (1) GB0215243D0 (de)
TW (1) TW200415447A (de)
WO (1) WO2004006016A2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604903B1 (en) * 2004-01-30 2009-10-20 Advanced Micro Devices, Inc. Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK)
US7442472B2 (en) * 2004-08-10 2008-10-28 Micron Technology, Inc. Methods of forming reticles
US8268538B2 (en) * 2004-08-31 2012-09-18 Taiwan Tft Lcd Association Method for producing a thin film transistor
TWI260774B (en) * 2005-07-19 2006-08-21 Quanta Display Inc Method for manufacturing liquid crystal display substrates
US7875483B2 (en) 2005-08-10 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of microelectromechanical system
TWI569092B (zh) * 2005-12-26 2017-02-01 Hoya Corp A mask substrate and a mask for manufacturing a flat panel display device
KR100792343B1 (ko) * 2006-08-29 2008-01-07 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조 방법
CN100397622C (zh) * 2006-09-25 2008-06-25 友达光电股份有限公司 主动组件阵列基板的制造方法
US7838174B2 (en) 2007-01-24 2010-11-23 Sharp Laboratories Of America, Inc. Method of fabricating grayscale mask using smart cut® wafer bonding process
TWI380136B (en) * 2008-02-29 2012-12-21 Nanya Technology Corp Exposing system, mask and design method thereof
TWI465856B (zh) * 2008-09-26 2014-12-21 Au Optronics Corp 製作圖案化材料層的方法
TWI390339B (zh) 2009-08-31 2013-03-21 Au Optronics Corp 用於製造薄膜電晶體的光罩及製造薄膜電晶體的源極／汲極的方法
KR101809657B1 (ko) 2011-09-22 2017-12-18 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR102252049B1 (ko) * 2014-08-04 2021-05-18 삼성디스플레이 주식회사 노광용 마스크, 이의 제조 방법 및 이를 이용한 기판의 제조 방법
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
CN106292040B (zh) * 2016-10-26 2020-01-03 武汉华星光电技术有限公司 阵列基板及其制造方法、液晶面板及液晶显示屏
DE102019216720A1 (de) * 2019-10-30 2021-05-06 Robert Bosch Gmbh Verfahren und Vorrichtung zum Erzeugen eines Elektronikmoduls
RU2745339C1 (ru) * 2020-09-02 2021-03-24 Общество с ограниченной ответственностью "Маппер" Устройство защиты структуры неохлаждаемого термочувствительного элемента и способ защиты структуры
WO2024182166A1 (en) * 2023-02-27 2024-09-06 Applied Materials, Inc. Method to modify an optical device resist

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60227235A (ja) * 1984-04-26 1985-11-12 Canon Inc 画像形成装置
JPS6318351A (ja) * 1986-07-11 1988-01-26 Hitachi Micro Comput Eng Ltd パタ−ン形成用マスク
US5015353A (en) * 1987-09-30 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy Method for producing substoichiometric silicon nitride of preselected proportions
US4863755A (en) * 1987-10-16 1989-09-05 The Regents Of The University Of California Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
JPH04299515A (ja) * 1991-03-27 1992-10-22 Shin Etsu Chem Co Ltd Ｘ線リソグラフィ−マスク用ｘ線透過膜およびその製造方法
JPH0777794A (ja) * 1991-05-30 1995-03-20 Sony Corp 位相シフトマスク
US5629115A (en) * 1993-04-30 1997-05-13 Kabushiki Kaisha Toshiba Exposure mask and method and apparatus for manufacturing the same
JP2878143B2 (ja) * 1994-02-22 1999-04-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法
US5766981A (en) * 1995-01-04 1998-06-16 Xerox Corporation Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD
KR100201040B1 (ko) * 1996-08-26 1999-06-15 다니구찌 이찌로오; 기타오카 다카시 위상 쉬프트 마스크 및 그 제조 방법
US6534242B2 (en) * 1997-11-06 2003-03-18 Canon Kabushiki Kaisha Multiple exposure device formation
US6045954A (en) * 1998-06-12 2000-04-04 Industrial Technology Research Institute Formation of silicon nitride film for a phase shift mask at 193 nm
KR20010028191A (ko) * 1999-09-18 2001-04-06 윤종용 ＣｒＡＩＯＮ을 위상 쉬프터 물질로서 사용한 위상 쉬프트 마스크 및 그 제조방법
KR100355228B1 (ko) * 2000-01-18 2002-10-11 삼성전자 주식회사 하프톤 위상반전 마스크 및 그 제조방법
US6391499B1 (en) * 2000-06-22 2002-05-21 Lg Philips Lcd Co., Ltd. Light exposure mask and method of manufacturing the same
JP3608654B2 (ja) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスク
JP3715189B2 (ja) * 2000-09-21 2005-11-09 株式会社ルネサステクノロジ 位相シフトマスク
US6653026B2 (en) * 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US7008735B2 (en) * 2003-09-02 2006-03-07 Macronix International Co., Ltd Mask for improving lithography performance by using multi-transmittance photomask
US7288366B2 (en) * 2003-10-24 2007-10-30 Chartered Semiconductor Manufacturing Ltd. Method for dual damascene patterning with single exposure using tri-tone phase shift mask
US7349101B2 (en) * 2003-12-30 2008-03-25 Asml Netherlands B.V. Lithographic apparatus, overlay detector, device manufacturing method, and device manufactured thereby
JP2005215434A (ja) * 2004-01-30 2005-08-11 Fujitsu Display Technologies Corp 表示装置用基板の製造方法及びそれを用いた表示装置の製造方法
TW200616232A (en) * 2004-08-09 2006-05-16 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film

Also Published As

Publication number Publication date
DE60312166D1 (de) 2007-04-12
JP2005531815A (ja) 2005-10-20
WO2004006016A2 (en) 2004-01-15
WO2004006016A3 (en) 2004-03-25
AU2003281392A1 (en) 2004-01-23
GB0215243D0 (en) 2002-08-14
CN100343757C (zh) 2007-10-17
US20060051974A1 (en) 2006-03-09
EP1520208B1 (de) 2007-02-28
DE60312166T2 (de) 2007-10-31
EP1520208A2 (de) 2005-04-06
TW200415447A (en) 2004-08-16
CN1666148A (zh) 2005-09-07

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