ATE109593T1 - Photoelektrisches umwandlungselement und verfahren zu seiner herstellung. - Google Patents

Photoelektrisches umwandlungselement und verfahren zu seiner herstellung.

Info

Publication number
ATE109593T1
ATE109593T1 AT87300853T AT87300853T ATE109593T1 AT E109593 T1 ATE109593 T1 AT E109593T1 AT 87300853 T AT87300853 T AT 87300853T AT 87300853 T AT87300853 T AT 87300853T AT E109593 T1 ATE109593 T1 AT E109593T1
Authority
AT
Austria
Prior art keywords
insulating layer
forming
manufacture
electrode
photoelectric conversion
Prior art date
Application number
AT87300853T
Other languages
English (en)
Inventor
Junichi Hoshi
Tamotsu Satoh
Shiro Arikawa
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61023282A external-priority patent/JPS62179760A/ja
Priority claimed from JP61125937A external-priority patent/JPH0691234B2/ja
Priority claimed from JP61156266A external-priority patent/JPS6313369A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE109593T1 publication Critical patent/ATE109593T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photovoltaic Devices (AREA)
AT87300853T 1986-02-04 1987-01-30 Photoelektrisches umwandlungselement und verfahren zu seiner herstellung. ATE109593T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61023282A JPS62179760A (ja) 1986-02-04 1986-02-04 光電変換装置の製造方法
JP61125937A JPH0691234B2 (ja) 1986-06-02 1986-06-02 光電変換装置
JP61156266A JPS6313369A (ja) 1986-07-04 1986-07-04 光電変換装置

Publications (1)

Publication Number Publication Date
ATE109593T1 true ATE109593T1 (de) 1994-08-15

Family

ID=27284192

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87300853T ATE109593T1 (de) 1986-02-04 1987-01-30 Photoelektrisches umwandlungselement und verfahren zu seiner herstellung.

Country Status (4)

Country Link
US (1) US5089425A (de)
EP (1) EP0232148B1 (de)
AT (1) ATE109593T1 (de)
DE (1) DE3750300T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3061891B2 (ja) * 1991-06-21 2000-07-10 キヤノン株式会社 半導体装置の製造方法
US5416344A (en) * 1992-07-29 1995-05-16 Nikon Corporation Solid state imaging device and method for producing the same
US5552619A (en) * 1995-05-10 1996-09-03 National Semiconductor Corporation Capacitor coupled contactless imager with high resolution and wide dynamic range
JP2004134514A (ja) * 2002-10-09 2004-04-30 Canon Inc 裏面入射型撮像センサ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533158A (en) * 1967-10-30 1970-10-13 Hughes Aircraft Co Method of utilizing an ion beam to form custom circuits
US3816769A (en) * 1969-12-17 1974-06-11 Integrated Photomatrix Ltd Method and circuit element for the selective charging of a semiconductor diffusion region
US3624428A (en) * 1970-03-20 1971-11-30 Rca Corp Electric signal processing circuit employing capacitively scanned phototransistor array
JPS49105490A (de) * 1973-02-07 1974-10-05
NL7308240A (de) * 1973-06-14 1974-12-17
JPS6057714B2 (ja) * 1978-01-27 1985-12-16 株式会社日立製作所 光半導体装置
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
JPS5795769A (en) * 1980-12-05 1982-06-14 Fuji Photo Film Co Ltd Semiconductor image pickup device
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS60142561A (ja) * 1983-12-28 1985-07-27 Matsushita Electric Ind Co Ltd 撮像装置の製造方法
JPS60251657A (ja) * 1984-05-28 1985-12-12 Canon Inc 半導体装置
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
JPH0760888B2 (ja) * 1985-06-12 1995-06-28 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
EP0232148A2 (de) 1987-08-12
DE3750300T2 (de) 1994-12-15
DE3750300D1 (de) 1994-09-08
EP0232148B1 (de) 1994-08-03
US5089425A (en) 1992-02-18
EP0232148A3 (en) 1988-04-20

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties