ATE346T1 - Verfahren zur herstellung einer mehrschichtigen glaskeramischen struktur mit innen liegenden versorgungsleitungen auf kupferbasis. - Google Patents

Verfahren zur herstellung einer mehrschichtigen glaskeramischen struktur mit innen liegenden versorgungsleitungen auf kupferbasis.

Info

Publication number
ATE346T1
ATE346T1 AT80100192T AT80100192T ATE346T1 AT E346 T1 ATE346 T1 AT E346T1 AT 80100192 T AT80100192 T AT 80100192T AT 80100192 T AT80100192 T AT 80100192T AT E346 T1 ATE346 T1 AT E346T1
Authority
AT
Austria
Prior art keywords
copper
manufacturing
supply lines
layer glass
ceramic structure
Prior art date
Application number
AT80100192T
Other languages
German (de)
English (en)
Inventor
Lester Wynn Herron
Raj Navinchandra Master
Rao Ramamahara Tummala
Original Assignee
International Business Machines Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21813197&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE346(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Business Machines Corporation filed Critical International Business Machines Corporation
Application granted granted Critical
Publication of ATE346T1 publication Critical patent/ATE346T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Insulated Conductors (AREA)
  • Surface Treatment Of Glass (AREA)
  • Communication Cables (AREA)
  • Glass Compositions (AREA)
AT80100192T 1979-03-23 1980-01-16 Verfahren zur herstellung einer mehrschichtigen glaskeramischen struktur mit innen liegenden versorgungsleitungen auf kupferbasis. ATE346T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/023,112 US4234367A (en) 1979-03-23 1979-03-23 Method of making multilayered glass-ceramic structures having an internal distribution of copper-based conductors
EP80100192A EP0016307B1 (de) 1979-03-23 1980-01-16 Verfahren zur Herstellung einer mehrschichtigen glaskeramischen Struktur mit innen liegenden Versorgungsleitungen auf Kupferbasis

Publications (1)

Publication Number Publication Date
ATE346T1 true ATE346T1 (de) 1981-11-15

Family

ID=21813197

Family Applications (1)

Application Number Title Priority Date Filing Date
AT80100192T ATE346T1 (de) 1979-03-23 1980-01-16 Verfahren zur herstellung einer mehrschichtigen glaskeramischen struktur mit innen liegenden versorgungsleitungen auf kupferbasis.

Country Status (7)

Country Link
US (1) US4234367A (ko)
EP (1) EP0016307B1 (ko)
JP (1) JPS55128899A (ko)
AT (1) ATE346T1 (ko)
CA (1) CA1123115A (ko)
DE (1) DE3060057D1 (ko)
IT (1) IT1150089B (ko)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355055A (en) * 1980-02-25 1982-10-19 E. I. Du Pont De Nemours And Company Use of prolonged tack toners for the preparation of multilayer electric circuits
US4340436A (en) * 1980-07-14 1982-07-20 International Business Machines Corporation Process for flattening glass-ceramic substrates
US5271887A (en) * 1980-08-04 1993-12-21 Witec Cayman Patents, Ltd. Method of fabricating complex micro-circuit boards, substrates and microcircuits and the substrates and microcircuits
JPS5817651A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 多層回路板とその製造方法
JPS58105595A (ja) * 1981-12-17 1983-06-23 富士通株式会社 多層セラミツク回路基板の製造方法
JPS58108792A (ja) * 1981-12-23 1983-06-28 株式会社日立製作所 多層回路板とその製造方法
JPS58108793A (ja) * 1981-12-23 1983-06-28 株式会社日立製作所 多層回路板とその製造方法
US4517155A (en) * 1982-05-18 1985-05-14 Union Carbide Corporation Copper base metal termination for multilayer ceramic capacitors
JPS59995A (ja) * 1982-06-16 1984-01-06 富士通株式会社 銅導体多層構造体の製造方法
JPS59182283A (ja) * 1983-03-29 1984-10-17 株式会社東芝 導電性セラミツクス焼結体の製造方法
JPS6030196A (ja) * 1983-07-28 1985-02-15 富士通株式会社 多層回路基板の製造方法
JPS60221358A (ja) * 1984-04-13 1985-11-06 日本碍子株式会社 電気絶縁体用セラミック組成物
US4671928A (en) * 1984-04-26 1987-06-09 International Business Machines Corporation Method of controlling the sintering of metal particles
JPS60254697A (ja) * 1984-05-31 1985-12-16 富士通株式会社 多層セラミック回路基板および製法
US4594181A (en) * 1984-09-17 1986-06-10 E. I. Du Pont De Nemours And Company Metal oxide-coated copper powder
FR2575331B1 (fr) * 1984-12-21 1987-06-05 Labo Electronique Physique Boitier pour composant electronique
JPS61155243A (ja) * 1984-12-28 1986-07-14 富士通株式会社 グリ−ンシ−ト組成物
JPH0132364Y2 (ko) * 1985-03-04 1989-10-03
JPS61270897A (ja) * 1985-05-25 1986-12-01 株式会社住友金属セラミックス 多層回路基板
KR900008781B1 (ko) * 1985-06-17 1990-11-29 마쯔시다덴기산교 가부시기가이샤 후막도체조성물
FR2585181B1 (fr) * 1985-07-16 1988-11-18 Interconnexions Ceramiques Procede de fabrication d'un substrat d'interconnexion pour composants electroniques, et substrat obtenu par sa mise en oeuvre
US4627160A (en) * 1985-08-02 1986-12-09 International Business Machines Corporation Method for removal of carbonaceous residues from ceramic structures having internal metallurgy
JPS6248097A (ja) * 1985-08-28 1987-03-02 日本特殊陶業株式会社 多層回路基板の製造法
US4678683A (en) * 1985-12-13 1987-07-07 General Electric Company Process for cofiring structure comprised of ceramic substrate and refractory metal metallization
JPS62191460A (ja) * 1986-02-14 1987-08-21 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ガラス・セラミック電気回路積層板の形成方法
US4898842A (en) * 1986-03-03 1990-02-06 International Business Machines Corporation Organometallic-derived cordierite and other compounds comprising oxides of silicon
US4885038A (en) * 1986-05-01 1989-12-05 International Business Machines Corporation Method of making multilayered ceramic structures having an internal distribution of copper-based conductors
US4879156A (en) * 1986-05-02 1989-11-07 International Business Machines Corporation Multilayered ceramic substrate having solid non-porous metal conductors
US5130067A (en) * 1986-05-02 1992-07-14 International Business Machines Corporation Method and means for co-sintering ceramic/metal mlc substrates
JP2527744B2 (ja) * 1986-08-01 1996-08-28 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 電子回路パッケ−ジングに含まれる構造体、及び、製造方法
US5045402A (en) * 1986-08-01 1991-09-03 International Business Machines Corporation Zirconia toughening of glass-ceramic materials
JPS63128791A (ja) * 1986-11-12 1988-06-01 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 金属導体を有する高密度多層ガラス・セラミツク構造体の製造方法
US4766027A (en) * 1987-01-13 1988-08-23 E. I. Du Pont De Nemours And Company Method for making a ceramic multilayer structure having internal copper conductors
JPS63249394A (ja) * 1987-04-06 1988-10-17 日本電気株式会社 多層回路基板
US4778549A (en) * 1987-04-13 1988-10-18 Corning Glass Works Catalysts for accelerating burnout or organic materials
US4794048A (en) * 1987-05-04 1988-12-27 Allied-Signal Inc. Ceramic coated metal substrates for electronic applications
US4788046A (en) * 1987-08-13 1988-11-29 Ceramics Process Systems Corporation Method for producing materials for co-sintering
CA1306903C (en) * 1987-09-24 1992-09-01 Edward A. Hayduk, Jr. Process for the manufacture of copper thick-film conductors using aninfrared furnace
US5147484A (en) * 1987-10-19 1992-09-15 International Business Machines Corporation Method for producing multi-layer ceramic substrates with oxidation resistant metalization
CA1338150C (en) * 1988-02-18 1996-03-12 Edward George Howard, Jr. Ceramic/distillable binder compositions
JPH0728128B2 (ja) * 1988-03-11 1995-03-29 松下電器産業株式会社 セラミック多層配線基板とその製造方法
US5053361A (en) * 1988-07-18 1991-10-01 International Business Machines Corporation Setter tile for use in sintering of ceramic substrate laminates
US4971738A (en) * 1988-07-18 1990-11-20 International Business Machines Corporation Enhanced removal of carbon from ceramic substrate laminates
US5202154A (en) * 1988-09-19 1993-04-13 Ngk Spark Plug Co., Ltd. Method of producing thick-film gas sensor element having improved stability
US5188886A (en) * 1988-10-14 1993-02-23 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US5130280A (en) * 1988-10-14 1992-07-14 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US5070050A (en) * 1988-10-14 1991-12-03 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
CA2007199C (en) * 1989-02-03 1993-05-18 Satish S. Tamhankar Single atmosphere for firing copper compatible thick film materials
US5302412A (en) * 1989-02-03 1994-04-12 The Boc Group, Inc. Single atmosphere for firing compatible thick film material
US5278135A (en) * 1989-02-18 1994-01-11 E. I. Du Pont De Nemours And Company Ceramic/distillable binder compositions
US5194294A (en) * 1989-02-20 1993-03-16 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for preparing electrical connection means, in particular interconnection substances of hybrid circuits
DE68912932T2 (de) * 1989-05-12 1994-08-11 Ibm Deutschland Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung.
JPH02119164A (ja) * 1989-09-20 1990-05-07 Hitachi Ltd 半導体モジユール
US5102720A (en) * 1989-09-22 1992-04-07 Cornell Research Foundation, Inc. Co-fired multilayer ceramic tapes that exhibit constrained sintering
US5194196A (en) * 1989-10-06 1993-03-16 International Business Machines Corporation Hermetic package for an electronic device and method of manufacturing same
JPH03204995A (ja) * 1989-10-27 1991-09-06 Matsushita Electric Ind Co Ltd セラミック多層基板の製造方法
US5089070A (en) * 1989-12-07 1992-02-18 Pac Polymers Inc. Poly(propylene carbonate)-containing ceramic tape formulations and the green tapes resulting therefrom
KR920002589B1 (ko) * 1990-03-30 1992-03-30 삼성코닝 주식회사 금속 인쇄된 세라믹 팩키지의 제조방법
US5073180A (en) * 1991-03-20 1991-12-17 International Business Machines Corporation Method for forming sealed co-fired glass ceramic structures
US5215610A (en) * 1991-04-04 1993-06-01 International Business Machines Corporation Method for fabricating superconductor packages
JP2584911B2 (ja) * 1991-06-18 1997-02-26 富士通株式会社 ガラス−セラミック多層回路基板の製造方法
US5925443A (en) * 1991-09-10 1999-07-20 International Business Machines Corporation Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias
US5682018A (en) * 1991-10-18 1997-10-28 International Business Machines Corporation Interface regions between metal and ceramic in a metal/ceramic substrate
JPH05218654A (ja) * 1991-10-25 1993-08-27 Internatl Business Mach Corp <Ibm> マイクロ波を用いたセラミック複合構造の製造方法
DE69329357T2 (de) * 1992-05-14 2001-04-26 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung von Leitern in Kontaktlöcher in vielschichtigen Keramiksubstraten
US5336444A (en) * 1992-05-29 1994-08-09 International Business Machines Corporation Ceramic via composition, multilayer ceramic circuit containing same, and process for using same
JPH06169174A (ja) * 1992-08-17 1994-06-14 Praxair Technol Inc 多層セラミック構造物からのバインダー除去
US5260519A (en) * 1992-09-23 1993-11-09 International Business Machines Corporation Multilayer ceramic substrate with graded vias
US5293504A (en) * 1992-09-23 1994-03-08 International Business Machines Corporation Multilayer ceramic substrate with capped vias
US5302562A (en) * 1992-10-28 1994-04-12 International Business Machines Corporation Method of controlling the densification behavior of a metallic feature in a ceramic material
JPH06223623A (ja) * 1992-12-28 1994-08-12 Internatl Business Mach Corp <Ibm> 銅を素材とするペーストおよびセラミックパッケージ
JP3150479B2 (ja) * 1993-03-11 2001-03-26 株式会社日立製作所 多層配線セラミック基板の製造方法
US5686790A (en) * 1993-06-22 1997-11-11 Candescent Technologies Corporation Flat panel device with ceramic backplate
JP2570617B2 (ja) * 1994-05-13 1997-01-08 日本電気株式会社 多層配線セラミック基板のビア構造及びその製造方法
JP2606155B2 (ja) * 1994-10-13 1997-04-30 日本電気株式会社 多層配線基板とその製造方法、及びそれに用いるシリカ焼結体の製造方法
US5728470A (en) * 1994-05-13 1998-03-17 Nec Corporation Multi-layer wiring substrate, and process for producing the same
DE4443365A1 (de) * 1994-12-06 1996-06-13 Philips Patentverwaltung Brenn- und Sinterverfahren für ein keramisches elektronisches Bauteil
US5613181A (en) * 1994-12-21 1997-03-18 International Business Machines Corporation Co-sintered surface metallization for pin-join, wire-bond and chip attach
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US6002951A (en) * 1997-11-12 1999-12-14 International Business Machines Corporation Multi-layer ceramic substrate having high TC superconductor circuitry
US6258191B1 (en) * 1998-09-16 2001-07-10 International Business Machines Corporation Method and materials for increasing the strength of crystalline ceramic
US6231707B1 (en) 1998-09-22 2001-05-15 International Business Machines Corporation Method of forming a multilayer ceramic substrate with max-punched vias
US6341417B1 (en) 1999-09-23 2002-01-29 International Business Machines Corporation Pre-patterned substrate layers for being personalized as needed
US6569278B1 (en) 1999-09-29 2003-05-27 International Business Machines Corporation Powder metal polymer organic sheet punching for substrate conductors
US6395206B1 (en) 2000-06-05 2002-05-28 Praxair Technology, Inc. Method of removing an organic binder from a green ceramic form
JP2003136027A (ja) * 2001-11-01 2003-05-13 Ngk Insulators Ltd 半導体製造装置中で使用するためのセラミック部材を洗浄する方法、洗浄剤および洗浄剤の組み合わせ
KR20040008094A (ko) * 2002-07-17 2004-01-28 엔지케이 스파크 플러그 캄파니 리미티드 동 페이스트, 이것을 이용한 배선기판 및 배선기판의제조방법
KR20040008093A (ko) * 2002-07-17 2004-01-28 엔지케이 스파크 플러그 캄파니 리미티드 동 페이스트 및 그것을 이용한 배선기판
US20090238954A1 (en) * 2008-03-20 2009-09-24 Seigi Suh Large area thin film capacitors on metal foils and methods of manufacturing same
US10471418B2 (en) 2015-10-16 2019-11-12 International Business Machines Corporation Selectively functionalized porous material
WO2019191350A1 (en) 2018-03-28 2019-10-03 Corning Incorporated Boron phosphate glass-ceramics with low dielectric loss

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423517A (en) * 1966-07-27 1969-01-21 Dielectric Systems Inc Monolithic ceramic electrical interconnecting structure
US3604082A (en) * 1968-10-30 1971-09-14 Corning Glass Works Method of making a capacitor
US3637435A (en) * 1969-07-08 1972-01-25 Gen Motors Corp Metallizing process for glass-free ceramics bodies
US3770529A (en) * 1970-08-25 1973-11-06 Ibm Method of fabricating multilayer circuits
JPS4911903A (ko) * 1972-05-10 1974-02-01
US3902102A (en) * 1974-04-01 1975-08-26 Sprague Electric Co Ceramic capacitor with base metal electrodes
US4101952A (en) * 1976-08-17 1978-07-18 Sprague Electric Company Monolithic base-metal glass-ceramic capacitor

Also Published As

Publication number Publication date
DE3060057D1 (en) 1982-01-14
JPS55128899A (en) 1980-10-06
EP0016307A1 (de) 1980-10-01
EP0016307B1 (de) 1981-11-04
IT1150089B (it) 1986-12-10
CA1123115A (en) 1982-05-04
IT8020408A0 (it) 1980-03-07
US4234367A (en) 1980-11-18
JPS6245720B2 (ko) 1987-09-28

Similar Documents

Publication Publication Date Title
ATE346T1 (de) Verfahren zur herstellung einer mehrschichtigen glaskeramischen struktur mit innen liegenden versorgungsleitungen auf kupferbasis.
DE3482681D1 (de) Verfahren zur herstellung einer integrierten schaltungsanordnung mit isolierwannen.
DE3853263D1 (de) Verfahren zur Herstellung von Leiterbahnen aus Supraleitern mit hoher kritischer Temperatur.
ATA28979A (de) Mehrschichtiges, gesintertes glaskeramiksubstrat mit aus gold, silber oder kupfer bestehenden leitungsmustern und, verfahren zu dessen herstellung
DE3750684D1 (de) Verfahren zur Herstellung von keramischen Mehrschichtstrukturen mit interner Anordnung von Kupferleitern.
DE3883594D1 (de) Verfahren zur Herstellung supraleitender Artikel auf der Basis von Kupferoxidkeramik.
DE2967704D1 (de) Verfahren zur herstellung einer halbleiteranordnung mit einer isolierschicht.
DE3581947D1 (de) Vorrichtung zur steuerung der energieversorgung an einer elektronischen schaltung.
DE69122568D1 (de) Hitzebeständiger flammfester leitender Film mit einer elektrischen Isolierschicht und Verfahren zu seiner Herstellung
AT366864B (de) Leiterplatte mit permanenten leiterzuegen aus isoliertem draht und verfahren zur herstellung einer solchen leiterplatte
DE3587481D1 (de) Schaltungssubstrat mit hoher waermeleitfaehigkeit.
JPS5328266A (en) Method of producing multilayer ceramic substrate
DE3787399D1 (de) Verfahren zum Herstellen eines keramischen Mehrshictsubstrates mit massivem nicht-porösem Metall-Leiter.
DE3585729D1 (de) Verfahren zur herstellung einer keramischen mehrschichtleiterplatte mit kupfermetallisierung.
DE69207250D1 (de) Verfahren zur Herstellung mikroelektronischer Gehäuse mit Kupfersubstrat
DE3852510D1 (de) Verfahren zur Herstellung einer leitenden oder supraleitenden dünnen Schicht.
DE3484733D1 (de) Verfahren zur herstellung einer dielektrisch isolierten integrierten schaltungsanordnung.
DE3862971D1 (de) Elektronenbuendelvorrichtung mit einer elektronenkanone und verfahren zur herstellung der elektronenkanone.
GB8431525D0 (en) Forming glass layers
DE3783418D1 (de) Verfahren zur herstellung einer halbleiterschaltung mit hoher durchbruchspannung.
JPS5376366A (en) Method of producing ceramic circuit board
ATA85382A (de) Verfahren zur herstellung von weichbraunkohlenbriketts mit hoher pyrolysestandfestigkeit
JPS5349264A (en) Method of producing multilayer ceramic substrate
JPS5285362A (en) Method of producing connecting terminal of ceramic wiring substrate
DE3885517D1 (de) Verfahren zur Herstellung von Stadtgas mit hohem Heizwert aus Methanol.

Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee