DE68912932T2 - Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung. - Google Patents

Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung.

Info

Publication number
DE68912932T2
DE68912932T2 DE68912932T DE68912932T DE68912932T2 DE 68912932 T2 DE68912932 T2 DE 68912932T2 DE 68912932 T DE68912932 T DE 68912932T DE 68912932 T DE68912932 T DE 68912932T DE 68912932 T2 DE68912932 T2 DE 68912932T2
Authority
DE
Germany
Prior art keywords
manufacture
glass
ceramic article
ceramic
article
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68912932T
Other languages
English (en)
Other versions
DE68912932D1 (de
Inventor
Manfred Dr Sammet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Publication of DE68912932D1 publication Critical patent/DE68912932D1/de
Application granted granted Critical
Publication of DE68912932T2 publication Critical patent/DE68912932T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00—Nature of the non-vitreous component
    • C03C2214/04—Particles; Flakes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00—Nature of the non-vitreous component
    • C03C2214/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00—Nature of the non-vitreous component
    • C03C2214/20—Glass-ceramics matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/086—Using an inert gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/087—Using a reactive gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
DE68912932T 1989-05-12 1989-05-12 Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung. Expired - Fee Related DE68912932T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89108540A EP0396806B1 (de) 1989-05-12 1989-05-12 Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
DE68912932D1 DE68912932D1 (de) 1994-03-17
DE68912932T2 true DE68912932T2 (de) 1994-08-11

Family

ID=8201349

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68912932T Expired - Fee Related DE68912932T2 (de) 1989-05-12 1989-05-12 Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung.

Country Status (4)

Country Link
US (1) US5029242A (de)
EP (1) EP0396806B1 (de)
JP (1) JP2531830B2 (de)
DE (1) DE68912932T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245136A (en) * 1989-10-06 1993-09-14 International Business Machines Corporation Hermetic package for an electronic device
JPH04234147A (ja) * 1990-12-28 1992-08-21 Sony Corp 多層配線構造体
JPH05116985A (ja) * 1991-05-22 1993-05-14 Ngk Spark Plug Co Ltd セラミツク基板
US5306874A (en) * 1991-07-12 1994-04-26 W.I.T. Inc. Electrical interconnect and method of its manufacture
EP0569799B1 (de) * 1992-05-14 2000-09-06 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung von Leitern in Kontaktlöcher in vielschichtigen Keramiksubstraten
US5293504A (en) * 1992-09-23 1994-03-08 International Business Machines Corporation Multilayer ceramic substrate with capped vias
US5260519A (en) * 1992-09-23 1993-11-09 International Business Machines Corporation Multilayer ceramic substrate with graded vias
JP3015621B2 (ja) * 1993-05-10 2000-03-06 松下電器産業株式会社 導体ペ−スト組成物
US5459923A (en) * 1993-07-28 1995-10-24 E-Systems, Inc. Method of marking hermetic packages for electrical device
JP2783751B2 (ja) * 1993-12-21 1998-08-06 富士通株式会社 多層セラミック基板の製造方法
US5618611A (en) * 1994-06-30 1997-04-08 Lucent Technologies Inc. Metallization of ferrites through surface reduction
CA2223099A1 (en) * 1995-06-06 1996-12-12 David Sarnoff Research Center, Inc. Electrokinetic pumping
US6388272B1 (en) * 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
US5700549A (en) * 1996-06-24 1997-12-23 International Business Machines Corporation Structure to reduce stress in multilayer ceramic substrates
US5937514A (en) * 1997-02-25 1999-08-17 Li; Chou H. Method of making a heat-resistant system
US6270601B1 (en) * 1998-11-02 2001-08-07 Coorstek, Inc. Method for producing filled vias in electronic components
US6303500B1 (en) * 1999-02-24 2001-10-16 Micron Technology, Inc. Method and apparatus for electroless plating a contact pad
US6284079B1 (en) 1999-03-03 2001-09-04 International Business Machines Corporation Method and structure to reduce low force pin pull failures in ceramic substrates
US6402156B1 (en) * 1999-04-16 2002-06-11 Eltron Research, Inc. Glass-ceramic seals for ceramic membrane chemical reactor application
US6136419A (en) * 1999-05-26 2000-10-24 International Business Machines Corporation Ceramic substrate having a sealed layer
JP4270792B2 (ja) * 2002-01-23 2009-06-03 富士通株式会社 導電性材料及びビアホールの充填方法
JP3945446B2 (ja) * 2003-04-24 2007-07-18 株式会社デンソー セラミック担体とその製造方法
US8569142B2 (en) * 2003-11-28 2013-10-29 Blackberry Limited Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same
JP4518885B2 (ja) * 2004-09-09 2010-08-04 京セラ株式会社 セラミック電子部品及びその製造方法
US20080001288A1 (en) * 2004-11-25 2008-01-03 Yoshimichi Sogawa Semiconductor Device and Manufacturing Method Thereof, Semiconductor Package, and Electronic Apparatus
AT503706B1 (de) * 2006-06-07 2011-07-15 Mikroelektronik Ges Mit Beschraenkter Haftung Ab Schaltungsträger
WO2008133612A1 (en) * 2007-04-26 2008-11-06 E. I. Du Pont De Nemours And Company Electrically conductive composition for via-holes
US7736544B2 (en) * 2007-04-26 2010-06-15 E. I. Du Pont De Nemours And Company Electrically conductive composition for via-holes
JP5501745B2 (ja) * 2009-12-01 2014-05-28 株式会社ニデック 視覚再生補助装置
US9374892B1 (en) * 2011-11-01 2016-06-21 Triton Microtechnologies Filling materials and methods of filling through holes for improved adhesion and hermeticity in glass substrates and other electronic components
US9236274B1 (en) * 2011-11-01 2016-01-12 Triton Microtechnologies Filling materials and methods of filling through holes for improved adhesion and hermeticity in glass substrates and other electronic components
US9337060B1 (en) * 2011-11-01 2016-05-10 Triton Microtechnologies Filling materials and methods of filling through holes for improved adhesion and hermeticity in glass substrates and other electronic components
CN105377479B (zh) * 2013-03-15 2018-07-31 肖特公司 玻璃-金属复合材料和制造方法
US20230005834A1 (en) * 2014-08-18 2023-01-05 Samtec, Inc. Electrically conductive vias and methods for producing same
KR102093157B1 (ko) * 2014-12-01 2020-03-25 삼성전기주식회사 다층 세라믹 기판
US10297521B2 (en) * 2015-04-27 2019-05-21 Kyocera Corporation Circuit substrate, and electronic device including same
WO2018140972A1 (en) * 2017-01-30 2018-08-02 TBT Group, Inc. Multilayer devices and methods of manufacturing
JP7280059B2 (ja) * 2018-05-29 2023-05-23 日本特殊陶業株式会社 電極埋設部材の製造方法
IT201800020944A1 (it) * 2018-12-21 2020-06-21 Luca Toncelli Metodo per la produzione di manufatti colorati in lastra vetroceramica a partire da un impasto base, fritta vetrosa per la realizzazione dell’impasto base e manufatto colorato in lastra vetroceramica così ottenuto
JP2022156320A (ja) * 2021-03-31 2022-10-14 Tdk株式会社 積層電子部品
CN114171479B (zh) * 2022-02-14 2022-05-24 潮州三环（集团）股份有限公司 一种陶瓷封装基座及其制备方法和应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR996899A (fr) * 1949-07-21 1951-12-27 Nouveaux produits de céramique
US3640906A (en) * 1969-06-16 1972-02-08 Owens Illinois Inc Electroconductive sintered glass
FR2296988A1 (fr) * 1974-12-31 1976-07-30 Ibm France Perfectionnement aux procedes de fabrication d'un module de circuits multicouches en ceramique
JPS5484270A (en) * 1977-12-16 1979-07-05 Fujitsu Ltd Method of making ceramic multiilayer circuit base board
US4301324A (en) * 1978-02-06 1981-11-17 International Business Machines Corporation Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
US4293325A (en) * 1978-05-22 1981-10-06 Corning Glass Works Method of forming hermetic seals
US4234367A (en) * 1979-03-23 1980-11-18 International Business Machines Corporation Method of making multilayered glass-ceramic structures having an internal distribution of copper-based conductors
US4799983A (en) * 1987-07-20 1989-01-24 International Business Machines Corporation Multilayer ceramic substrate and process for forming therefor
US4806188A (en) * 1988-03-04 1989-02-21 E. I. Du Pont De Nemours And Company Method for fabricating multilayer circuits

Also Published As

Publication number Publication date
DE68912932D1 (de) 1994-03-17
EP0396806A1 (de) 1990-11-14
JPH0319295A (ja) 1991-01-28
US5029242A (en) 1991-07-02
EP0396806B1 (de) 1994-02-02
JP2531830B2 (ja) 1996-09-04

Similar Documents

Publication Publication Date Title
DE68912932D1 (de) Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung.
DE3880869T2 (de) Verstärkter Glasgegenstand und Verfahren zu dessen Herstellung.
DE69022920T2 (de) Greifmittel für Artikel und Verfahren zu dessen Herstellung.
DE59007338D1 (de) Optisches Bauelement und Verfahren zu dessen Herstellung.
DE3879320T2 (de) Copolyester und verfahren zu dessen herstellung.
DE68905735D1 (de) Synthetisches geschmolzenes quarzglas und verfahren zu dessen herstellung.
DE69006318T2 (de) Glasiertes Metallrohr und Verfahren zu dessen Herstellung.
DE69017348T2 (de) Thyristor und Verfahren zu dessen Herstellung.
DE69127949T2 (de) Thyristor und Verfahren zu dessen Herstellung
DE59201840D1 (de) Mikroventil und Verfahren zu dessen Herstellung.
DE3884069D1 (de) Polysilazan und Verfahren zu dessen Herstellung.
DE3852150D1 (de) Polysilazan und Verfahren zu dessen Herstellung.
DE69021221T2 (de) Kohlebindemittel und Verfahren zu dessen Herstellung.
DE69117231T2 (de) 1-Kestose und Verfahren zu dessen Herstellung
DE69111327D1 (de) Block von Mikroverbindungsstiften und Verfahren zu dessen Herstellung.
DE69004740T2 (de) Stapelfasern und Verfahren zu deren Herstellung.
DE3851192D1 (de) Hologon und Verfahren zu seiner Herstellung.
DE69016375D1 (de) Orthodontisches Bracket und Verfahren und dessen Herstellung.
DE69005063D1 (de) Synthetisches Quarzglas und Verfahren zu dessen Herstellung.
DE69228509D1 (de) Copolymer und Verfahren zu dessen Herstellung
DE59009107D1 (de) 1-E3-(2-Hydroxy-3-alkylaminopropoxy)-2-thienyl]-3-phenyl-1-propanone und Verfahren zu deren Herstellung.
DE69031260T2 (de) Elektrophotoempfindliches Material und Verfahren zu dessen Herstellung
DE69018027D1 (de) Syndiotaktisches alpha-Olefin-Alkenylsilancopolymer und Verfahren zur Herstellung desselben.
DE69103125D1 (de) Hitzebeständiger Herapathit und Verfahren zu dessen Herstellung.
DE69123384T2 (de) Kupplungsbestandteil und Verfahren zu dessen Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee