DE3587481D1 - Schaltungssubstrat mit hoher waermeleitfaehigkeit. - Google Patents

Schaltungssubstrat mit hoher waermeleitfaehigkeit.

Info

Publication number
DE3587481D1
DE3587481D1 DE8585102159T DE3587481T DE3587481D1 DE 3587481 D1 DE3587481 D1 DE 3587481D1 DE 8585102159 T DE8585102159 T DE 8585102159T DE 3587481 T DE3587481 T DE 3587481T DE 3587481 D1 DE3587481 D1 DE 3587481D1
Authority
DE
Germany
Prior art keywords
high heat
circuit substrate
heat conductivity
conductivity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585102159T
Other languages
English (en)
Other versions
DE3587481T2 (de
Inventor
Nobuo Iwase
Kazuo Anzai
Kazuo Shinozaki
Akihiko Tsuge
Kazutaka Saito
Kiyoshi Riyogi
Noboru Sato
Mitsuo Kasori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3416584A external-priority patent/JPS60178688A/ja
Priority claimed from JP3416384A external-priority patent/JPS60178687A/ja
Priority claimed from JP59204101A external-priority patent/JPH0691304B2/ja
Priority claimed from JP23947184A external-priority patent/JPS61119094A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3587481D1 publication Critical patent/DE3587481D1/de
Application granted granted Critical
Publication of DE3587481T2 publication Critical patent/DE3587481T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5111—Ag, Au, Pd, Pt or Cu
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Ceramic Products (AREA)
DE85102159T 1984-02-27 1985-02-27 Schaltungssubstrat mit hoher Wärmeleitfähigkeit. Expired - Fee Related DE3587481T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3416584A JPS60178688A (ja) 1984-02-27 1984-02-27 高熱伝導性回路基板
JP3416384A JPS60178687A (ja) 1984-02-27 1984-02-27 高熱伝導性回路基板
JP59204101A JPH0691304B2 (ja) 1984-10-01 1984-10-01 高熱伝導性回路基板
JP23947184A JPS61119094A (ja) 1984-11-15 1984-11-15 高熱伝導性回路基板の製造方法

Publications (2)

Publication Number Publication Date
DE3587481D1 true DE3587481D1 (de) 1993-09-02
DE3587481T2 DE3587481T2 (de) 1993-12-16

Family

ID=27459898

Family Applications (1)

Application Number Title Priority Date Filing Date
DE85102159T Expired - Fee Related DE3587481T2 (de) 1984-02-27 1985-02-27 Schaltungssubstrat mit hoher Wärmeleitfähigkeit.

Country Status (3)

Country Link
US (1) US4659611A (de)
EP (1) EP0153737B1 (de)
DE (1) DE3587481T2 (de)

Families Citing this family (74)

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US5165983A (en) * 1984-09-30 1992-11-24 Kabushiki Kaisha Toshiba Method for production of aluminum nitride ceramic plate
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JPS6265991A (ja) * 1985-09-13 1987-03-25 株式会社東芝 高熱伝導性セラミツクス基板
JPS6273799A (ja) * 1985-09-27 1987-04-04 日本電気株式会社 多層セラミツク配線基板
US5314850A (en) * 1985-10-31 1994-05-24 Kyocera Corporation Aluminum nitride sintered body and production thereof
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US4770953A (en) * 1986-02-20 1988-09-13 Kabushiki Kaisha Toshiba Aluminum nitride sintered body having conductive metallized layer
JPS62207789A (ja) * 1986-03-08 1987-09-12 日本特殊陶業株式会社 窒化アルミニウム製基材の表面構造及びその製造法
JPH0680873B2 (ja) * 1986-07-11 1994-10-12 株式会社東芝 回路基板
KR940000729B1 (ko) * 1986-08-13 1994-01-28 히다찌 긴조꾸 가부시끼가이샤 질화 알루미늄 소결체 및 그 반도체 기판
DE3630066C1 (de) * 1986-09-04 1988-02-04 Heraeus Gmbh W C Verfahren zur Herstellung von gesinterten metallisierten Aluminiumnitrid-Keramikkoerpern
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US4908116A (en) * 1989-06-01 1990-03-13 The Board Of Trustees At The Leland Stanford Junior University Capillary electrophoretic device employing structure permitting electrical contact through ionic movement
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US6207288B1 (en) * 1991-02-05 2001-03-27 Cts Corporation Copper ink for aluminum nitride
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US5466488A (en) * 1993-02-08 1995-11-14 Mitsubishi Materials Corporation Method of making glazed AlN substrate with an Al2 O3 -SiO2 interfacial layer
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JPH07109573A (ja) * 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
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US5541145A (en) * 1993-12-22 1996-07-30 The Carborundum Company/Ibm Corporation Low temperature sintering route for aluminum nitride ceramics
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US6444297B1 (en) * 2000-07-19 2002-09-03 Electro Technik Industries, Inc. Method of producing a thick film metallization on an aluminum nitride substrate
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JP4243943B2 (ja) 2002-04-22 2009-03-25 日本碍子株式会社 窒化アルミニウム材料および半導体製造用部材
US20080131673A1 (en) * 2005-12-13 2008-06-05 Yasuyuki Yamamoto Method for Producing Metallized Ceramic Substrate
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JP2008245668A (ja) * 2007-03-29 2008-10-16 Fujinon Corp 電子内視鏡の撮像装置、および電子内視鏡
EP2155628A2 (de) * 2007-04-24 2010-02-24 CeramTec AG Bauteil mit einem metallisierten keramikkörper
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CN111484333A (zh) * 2019-01-28 2020-08-04 华中科技大学 一种兼具高热导率和高强度的氮化铝陶瓷及其制备方法
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US4539298A (en) * 1981-11-25 1985-09-03 Tokyo Shibaura Denki Kabushiki Kaisha Highly heat-conductive ceramic material
DE3248103C1 (de) * 1982-12-24 1987-11-12 W.C. Heraeus Gmbh, 6450 Hanau Tiegel zum Ziehen von Einkristallen
JPS59229843A (ja) * 1983-06-13 1984-12-24 Toshiba Corp 半導体装置
US4478785A (en) * 1983-08-01 1984-10-23 General Electric Company Process of pressureless sintering to produce dense, high thermal conductivity aluminum nitride ceramic body

Also Published As

Publication number Publication date
EP0153737B1 (de) 1993-07-28
DE3587481T2 (de) 1993-12-16
EP0153737A2 (de) 1985-09-04
US4659611A (en) 1987-04-21
EP0153737A3 (en) 1987-04-15

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