ZA200602267B - Solvent-modified resin compositions and methods of use thereof - Google Patents

Solvent-modified resin compositions and methods of use thereof Download PDF

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Publication number
ZA200602267B
ZA200602267B ZA200602267A ZA200602267A ZA200602267B ZA 200602267 B ZA200602267 B ZA 200602267B ZA 200602267 A ZA200602267 A ZA 200602267A ZA 200602267 A ZA200602267 A ZA 200602267A ZA 200602267 B ZA200602267 B ZA 200602267B
Authority
ZA
South Africa
Prior art keywords
suspension concentrate
oil suspension
herbicidal composition
group
hydrocarbons
Prior art date
Application number
ZA200602267A
Other languages
English (en)
Inventor
Rubinsztajn Slawomir
Gibson David Alexander Iii
Prabhakumar Ananth
Tonapi Sandeep
Campbell John Robert
Mills Ryan Christopher
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of ZA200602267B publication Critical patent/ZA200602267B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/04—Ingredients treated with organic substances
    • C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28—Compounds of silicon
    • C09C1/30—Silicic acid
    • C09C1/3081—Treatment with organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
ZA200602267A 2003-09-03 2006-03-17 Solvent-modified resin compositions and methods of use thereof ZA200602267B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/654,378 US20050049334A1 (en) 2003-09-03 2003-09-03 Solvent-modified resin system containing filler that has high Tg, transparency and good reliability in wafer level underfill applications

Publications (1)

Publication Number Publication Date
ZA200602267B true ZA200602267B (en) 2007-07-25

Family

ID=34218078

Family Applications (2)

Application Number Title Priority Date Filing Date
ZA200602267A ZA200602267B (en) 2003-09-03 2006-03-17 Solvent-modified resin compositions and methods of use thereof
ZA200602266A ZA200602266B (en) 2003-09-03 2006-03-17 Solvent-modified resin system containing filler that has high Tg, transparency and good reliability in wafer level underfill applications

Family Applications After (1)

Application Number Title Priority Date Filing Date
ZA200602266A ZA200602266B (en) 2003-09-03 2006-03-17 Solvent-modified resin system containing filler that has high Tg, transparency and good reliability in wafer level underfill applications

Country Status (14)

Country Link
US (2) US20050049334A1 (de)
EP (1) EP1665376A1 (de)
JP (1) JP2007504321A (de)
KR (1) KR20060093707A (de)
CN (2) CN100490130C (de)
AT (1) ATE446589T1 (de)
AU (1) AU2004271534A1 (de)
BR (1) BRPI0413778A (de)
CA (1) CA2537828A1 (de)
DE (1) DE602004023734D1 (de)
MX (1) MXPA06002522A (de)
RU (1) RU2358353C2 (de)
WO (1) WO2005024939A1 (de)
ZA (2) ZA200602267B (de)

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US20050266263A1 (en) * 2002-11-22 2005-12-01 General Electric Company Refractory solid, adhesive composition, and device, and associated method
US20040102529A1 (en) * 2002-11-22 2004-05-27 Campbell John Robert Functionalized colloidal silica, dispersions and methods made thereby
US7022410B2 (en) * 2003-12-16 2006-04-04 General Electric Company Combinations of resin compositions and methods of use thereof
US20060147719A1 (en) * 2002-11-22 2006-07-06 Slawomir Rubinsztajn Curable composition, underfill, and method
US7405246B2 (en) * 2005-04-05 2008-07-29 Momentive Performance Materials Inc. Cure system, adhesive system, electronic device
US7446136B2 (en) * 2005-04-05 2008-11-04 Momentive Performance Materials Inc. Method for producing cure system, adhesive system, and electronic device
US7339834B2 (en) 2005-06-03 2008-03-04 Sandisk Corporation Starting program voltage shift with cycling of non-volatile memory
DE102005040126A1 (de) * 2005-08-25 2007-03-01 Altana Electrical Insulation Gmbh Überzugsmasse
TWI305389B (en) * 2005-09-05 2009-01-11 Advanced Semiconductor Eng Matrix package substrate process
US7551482B2 (en) 2006-12-27 2009-06-23 Sandisk Corporation Method for programming with initial programming voltage based on trial
US7570520B2 (en) 2006-12-27 2009-08-04 Sandisk Corporation Non-volatile storage system with initial programming voltage based on trial
JPWO2009008509A1 (ja) * 2007-07-11 2010-09-09 日産化学工業株式会社 無機粒子を含有した液状エポキシ樹脂形成用製剤
ES2644759T3 (es) * 2008-07-18 2017-11-30 Evonik Degussa Gmbh Dispersión de partículas de dióxido de silicio hidrofobizadas y granulado de la misma
DE102008048874A1 (de) * 2008-09-25 2010-04-08 Siemens Aktiengesellschaft Beschichtungen für elektronische Schaltungen
WO2010043638A2 (en) * 2008-10-15 2010-04-22 Basf Se Curable epoxide formulation containing silica
JP5353629B2 (ja) * 2008-11-14 2013-11-27 信越化学工業株式会社 熱硬化性樹脂組成物
JP5638812B2 (ja) * 2010-02-01 2014-12-10 株式会社ダイセル 硬化性エポキシ樹脂組成物
BR112012032981A2 (pt) * 2010-06-25 2016-11-22 Dow Global Technologies Llc composição de resina epóxi curável livre de diluente para preparar um compósito, processo para preparar uma composição ou sistema de resina curável, livre de diluente, produto compósito curado e processo para preparar produto compósito curado
US8070045B1 (en) * 2010-12-02 2011-12-06 Rohm And Haas Electronic Materials Llc Curable amine flux composition and method of soldering
US8070046B1 (en) * 2010-12-02 2011-12-06 Rohm And Haas Electronic Materials Llc Amine flux composition and method of soldering
JP5598343B2 (ja) * 2011-01-17 2014-10-01 信越化学工業株式会社 半導体封止用液状エポキシ樹脂組成物及び半導体装置
US8531821B2 (en) * 2011-01-28 2013-09-10 Raytheon Company System for securing a semiconductor device to a printed circuit board
JP5685451B2 (ja) * 2011-02-01 2015-03-18 アイカ工業株式会社 難燃化用組成物及び化粧板
CN102876179B (zh) * 2011-07-13 2015-03-11 中国科学院化学研究所 用于喷墨打印直接制版用铝版基的涂料及其制法和应用
US9085685B2 (en) 2011-11-28 2015-07-21 Nitto Denko Corporation Under-fill material and method for producing semiconductor device
CN106029803A (zh) 2014-02-24 2016-10-12 汉高知识产权控股有限责任公司 导热性预涂底部填充配制物及其用途
EP3258930B1 (de) * 2015-02-19 2020-12-09 Lixte Biotechnology, Inc. Oxabicycloheptane und oxabicycloheptene zur behandlung von depressiven und stressbedingten störungen
CN109564903B (zh) * 2016-08-10 2022-11-15 松下知识产权经营株式会社 密封用丙烯酸类组合物、片材、层叠片、固化物、半导体装置及半导体装置的制造方法
TWI606565B (zh) * 2016-08-31 2017-11-21 金寶電子工業股份有限公司 封裝結構及其製作方法
TWI654218B (zh) 2018-01-08 2019-03-21 財團法人工業技術研究院 樹脂組合物與導熱材料的形成方法
CN109504327A (zh) * 2018-11-13 2019-03-22 烟台德邦科技有限公司 一种高Tg高可靠性的环氧树脂封装导电胶及其制备方法
CN114149725B (zh) * 2021-11-25 2022-07-08 中国船舶重工集团公司第七二五研究所 一种破冰船用破冰涂料及其制备方法
CN116814174B (zh) * 2023-08-24 2023-11-28 佛山市奥川顺新材料实业有限公司 一种复合型pet保护膜及其制备方法

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Also Published As

Publication number Publication date
CN1875478A (zh) 2006-12-06
CN100490130C (zh) 2009-05-20
EP1665376A1 (de) 2006-06-07
RU2358353C2 (ru) 2009-06-10
CN1875477A (zh) 2006-12-06
AU2004271534A1 (en) 2005-03-17
JP2007504321A (ja) 2007-03-01
US20050049334A1 (en) 2005-03-03
CA2537828A1 (en) 2005-03-17
BRPI0413778A (pt) 2006-10-31
KR20060093707A (ko) 2006-08-25
ATE446589T1 (de) 2009-11-15
MXPA06002522A (es) 2006-06-20
DE602004023734D1 (de) 2009-12-03
RU2006110520A (ru) 2007-10-10
ZA200602266B (en) 2007-07-25
WO2005024939A1 (en) 2005-03-17
US20050049352A1 (en) 2005-03-03

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