Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/01—Manufacture or treatment
  • H10W72/019—Manufacture or treatment of bond pads
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/90—Bond pads, in general
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/01—Manufacture or treatment
  • H10W72/019—Manufacture or treatment of bond pads
  • H10W72/01904—Manufacture or treatment of bond pads using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/01—Manufacture or treatment
  • H10W72/0198—Manufacture or treatment batch processes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/90—Bond pads, in general
  • H10W72/941—Dispositions of bond pads
  • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/90—Bond pads, in general
  • H10W72/951—Materials of bond pads
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/90—Bond pads, in general
  • H10W72/951—Materials of bond pads
  • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/011—Manufacture or treatment of pads or other interconnections to be direct bonded
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/011—Manufacture or treatment of pads or other interconnections to be direct bonded
  • H10W80/016—Cleaning
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/011—Manufacture or treatment of pads or other interconnections to be direct bonded
  • H10W80/031—Changing or setting shapes of the pads
  • H10W80/033—Changing or setting shapes of the pads by chemical means, e.g. etching
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/211—Direct bonding of chips, wafers or substrates using auxiliary members, e.g. aids for protecting the bonding area
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/301—Bonding techniques, e.g. hybrid bonding
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/301—Bonding techniques, e.g. hybrid bonding
  • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/301—Bonding techniques, e.g. hybrid bonding
  • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/20—Configurations of stacked chips
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
  • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Definitions

• the field relates to direct bonding methods and structures.
• Semiconductor elements such as semiconductor wafers or integrated device dies, can be stacked and directly bonded to one another without an adhesive.
• non-conductive field regions of the elements can be directly bonded to one another, and corresponding conductive contact structures can be directly bonded to one another.
• a bonding method can include: preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; and after the preparing, providing a protective layer over the prepared first bonding surface of the first element, the protective layer having a thickness less than 3 microns.
• preparing the first bonding surface comprises activating the first bonding surface.
• activating the first bonding surface comprises plasma activating the first bonding surface.
• plasma activating the first bonding surface comprises exposing the first bonding surface to a nitrogen- containing plasma.
• the thickness of the protective layer is less than 2 microns. In some embodiments, the thickness of the protective layer is less than 0.25 microns. In some embodiments, the thickness of the protective layer is in a range of 0.05 microns to 2 microns. In some embodiments, the thickness of the protective layer is in a range of 0.1 microns to 0.25 microns. In some embodiments, the protective layer comprises an organic layer.
• the protective layer comprises a hydrophobic coating and/or a hydrophilic coating.
• the protective layer comprises a photoresist.
• providing the protective layer comprises blanket depositing the protective layer over the first bonding surface.
• the bonding method includes removing the blanket deposited protective layer using a reactive ion etching (RIE) process.
• RIE reactive ion etching
• the bonding method includes, before the removing, cleaning particles from the first element.
• the bonding method includes, before providing the protective layer, selectively providing a passivation layer over a plurality of contact pads, and wherein providing the protective layer comprises providing the protective layer over the passivation layer.
• providing the protective layer comprises selectively providing the protective layer over conductive contact pads of the first bonding surface.
• the first bonding surface includes a plurality of contact pads, the contact pads protruding above a first non-conductive region of the first bonding surface, wherein providing the protective layer comprises providing the protective layer over at least the protruding contact pads.
• providing the protective layer comprises blanket depositing the protective layer over the first bonding surface.
• the bonding method includes planarizing the first element such that the plurality of contact pads are flush with or recessed below the first non-conductive region.
• the first bonding surface includes a first plurality of conductive contact pads and a first non- conductive bonding region, the first plurality of conductive contact pads recessed below the first non-conductive bonding region. In some embodiments, the first plurality of conductive contact pads are recessed below the first non-conductive bonding region by no more than 10 nm. In some embodiments, a variation in recess depth of the first plurality of contact pads across the first element is less than 25%. In some embodiments, the variation in recess depth of the first plurality of contact pads across the first element is less than 10%. In some embodiments, the variation in recess depth of the first plurality of contact pads across the first element is less than 5%.
• the bonding method includes comprising removing the protective layer.
• the first element comprises a wafer, the method further comprising, before removing the protective layer, singulating the wafer to form a plurality of singulated elements.
• the bonding method includes, after removing the protective layer, directly bonding the first bonding surface of the first element to the second bonding surface of the second element without an intervening adhesive.
• the first bonding surface comprises a first plurality of conductive contact pads and a first non-conductive bonding region
• the second bonding surface comprises a second plurality of conductive contact pads and a second non-conductive bonding region
• directly bonding comprise hybrid direct bonding, including directly bonding the first and second pluralities of conductive contact pads to one another without an adhesive and directly bonding the first and second non-conductive bonding regions to one another without an adhesive.
• the first non-conductive bonding region comprises a silicon-containing dielectric layer.
• the bonding method includes activating the second bonding surface before directly bonding.
• preparing the first bonding surface and providing the protective layer are performed in a first facility, and wherein directly bonding is performed at a second facility that is in a different location from the first facility. In some embodiments, directly bonding is performed more than twenty-four (24) hours after activating the first bonding layer.
• a bonding method includes: preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; after the preparing, selectively providing a passivation layer over a plurality of contact pads of the first bonding surface; and after providing the passivation layer, providing the protective layer over the passivation layer.
• providing the protective layer comprises blanket depositing the protective layer over the first bonding surface.
• the protective layer has a thickness less than 3 microns. In some embodiments, the thickness of the protective layer is less than 2 microns. In some embodiments, the thickness of the protective layer is less than 0.25 microns. In some embodiments, the thickness of the protective layer is in a range of 0.05 microns to 2 microns. In some embodiments, the thickness of the protective layer is in a range of 0.1 microns to 0.25 microns.
• the protective layer comprises an organic layer. In some embodiments, the protective layer comprises a hydrophobic coating and/or a hydrophilic coating.
• the method can include removing the protective layer.
• the first element comprises a wafer, the method further comprising, before removing the protective layer, singulating the wafer to form a plurality of singulated elements.
• the method can include, after removing the protective layer, directly bonding the first bonding surface of the first element to the second bonding surface of the second element without an intervening adhesive.
• the first plurality of conductive contact pads are recessed below a first non-conductive bonding region of the first bonding surface.
• the first plurality of conductive contact pads are recessed below the first non- conductive bonding region by no more than 10 nm.
• a variation in recess depth of the first plurality of contact pads is less than 25%.
• the variation in recess depth of the first plurality of contact pads is less than 10%, for example, less than 5%.
• a bonding method can include: preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; and after the preparing, selectively providing a protective layer over a plurality of contact pads of the first bonding surface.
• the first bonding surface further includes a first non- conductive material, wherein no protective layer is provided over an entirety of the first non- conductive material.
• the protective layer has a thickness less than 3 microns. In some embodiments, the thickness of the protective layer is less than 2 microns. In some embodiments, the thickness of the protective layer is less than 0.25 microns. In some embodiments, the thickness of the protective layer is in a range of 0.05 microns to 2 microns. In some embodiments, the thickness of the protective layer is in a range of 0.1 microns to 0.25 microns. In some embodiments, the protective layer comprises an organic layer.
• the protective layer comprises a hydrophobic coating and/or a hydrophilic coating.
• the method can include providing a passivation layer comprising oxidizing surfaces of the contact pads.
• the method can include removing the protective layer.
• the first element comprises a wafer, the method further comprising, before removing the protective layer, singulating the wafer to form a plurality of singulated elements.
• the method can include, after removing the protective layer, directly bonding the first bonding surface of the first element to the second bonding surface of the second element without an intervening adhesive.
• a bonding method can include: preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element, the first bonding surface including a first non-conductive region and a first plurality of contact pads protruding above the first non-conductive region; and after the preparing, providing a protective layer over at least the first plurality of contact pads.
• providing the protective layer comprises blanket depositing the protective layer over the first bonding surface.
• the method can include planarizing the first element such that the first plurality of contact pads are recessed below the first non-conductive region.
• the method can include removing the protective material.
• a bonding method can include: preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; and after the preparing, selectively providing a passivation layer over a plurality of contact pads of the first bonding surface.
• the method can include singulating the first element with the passivation layer over the plurality of contact pads, wherein the passivation layer is exposed at an upper surface of the element during the singulating.
• a semiconductor element comprises: a device region; a bonding layer over the device region, the bonding layer having a bonding surface prepared for direct hybrid bonding to a second element; and a protective layer over at least a portion of the prepared first bonding surface, the protective layer having a thickness less than 3 microns.
• the protective layer comprises a photoresist.
• the semiconductor element is in wafer form.
• the thickness of the protective layer is in a range of 0.05 microns to 2 microns.
• the bonding layer comprises a plurality of conductive contact pads and a non-conductive bonding region.
• the semiconductor element further comprises a passivation layer over the plurality of conductive contact pads between the plurality of contact pads and the protective layer.
• the protective layer is selectively provided over the plurality of conductive contact pads.
• the plurality of conductive contact pads protrudes above the bonding layer.
• the plurality of conductive contact pads is recessed below an upper surface of the bonding layer.
• the protective layer is blanket deposited over the bonding surface.
• a semiconductor element comprises: a device region; a bonding layer over the device region, the bonding layer having a bonding surface prepared for direct hybrid bonding to a second element and including a plurality of conductive contact pads and a non-conductive bonding region, the plurality of conductive contact pads each having a recess depth by which the conductive contact pads are recessed below the bonding surface, wherein a variation in recess depth of the plurality of contact pads is less than 25%.
• the variation in recess depth of the plurality of conductive contact pads is less than 10%.
• the variation in recess depth of the plurality of conductive contact pads is in a range of 0.5% to 10%, or in a range of 0.1% to 5%.
• a semiconductor element comprises: a device region; a bonding layer over the device region, the bonding layer having a bonding surface prepared for direct hybrid bonding; and a conductive layer exposed at a portion of the prepared bonding surface, the conductive layer having a recess variation less than 5 nm within the bonding surface of the device.
• the recess variation is less than 3 nm within the bonding surface of the device.
• the recess variation is less than 2 nm within the bonding surface of the device.
• the recess variation is less than 1 nm within the bonding surface of the device.
• the recess variation is between 0.5 nm and 5 nm within the bonding surface of the device.
• the conductive layer includes a plurality of conductive contact pads, the plurality of conductive contact pads each having a recess depth by which they are recessed below the bonding surface.
• the bonding layer includes a non-conductive layer in which the conductive layer is at least partially embedded. In some embodiments, the non-conductive layer is polished.
• FIGS la- lb schematically illustrate a direct bonding process according to some embodiments.
• FIG. 2 is a diagram plotting maximum recess distances from a bonding plane versus temperature, for different thicknesses of a thermally expanding metal contact.
• FIG. 3 is a diagram showing an example process for protecting a surface of a semiconductor element during processing according to some embodiments.
• FIG. 4 is a diagram showing an example process for protecting a surface of a semiconductor element during processing according to some embodiments.
• FIG. 5 is a diagram showing an example process for protecting a surface of a semiconductor element during processing according to some embodiments.
• FIG. 6 is a diagram showing an example process for protecting a surface of a semiconductor element during processing according to some embodiments.
• FIG. 7 is a diagram showing an example process for protecting a surface of a semiconductor element during processing according to some embodiments.
• FIGS la and lb schematically illustrate a process for forming a directly bonded structure without intervening adhesive according to some embodiments.
• a directly bonded structure 100 comprises two elements 102 and 104 that can be directly bonded to one another without an intervening adhesive.
• Two or more semiconductor elements (such as integrated device dies, wafers, etc.) 102 and 104 may be stacked on or bonded to one another to form a bonded structure 100.
• Conductive contact pads 106a of a first element 102 may be electrically connected to corresponding conductive contact pads 106b of a second element 104.
• any suitable number of elements can be stacked in the bonded structure 100.
• a third element (not shown) can be stacked on the second element 104
• a fourth element (not shown) can be stacked on the third element, and so forth.
• one or more additional elements can be stacked laterally adjacent one another along the first element 102.
• the laterally stacked additional element may be smaller than the second element.
• the laterally stacked additional element may be two times smaller than the second element.
• the elements 102 and 104 are directly bonded to one another without an adhesive.
• a non-conductive or dielectric material can serve as a first bonding layer 108a of the first element 102 which can be directly bonded to a corresponding non-conductive or dielectric field region serving as a second bonding layer 108b of the second element 104 without an adhesive.
• the non-conductive bonding layers 108a and 108b can be disposed on respective front sides 114a and 114b of device portions 110a and 110b, such as a semiconductor (e.g ., silicon) portion of the elements 2, 3.
• Active devices and/or circuitry can be patterned and/or otherwise disposed in or on the device portions 110a and 110b.
• Active devices and/or circuitry can be disposed at or near the front sides 114a and 114b of the device portions 110a and 110b, and/or at or near opposite backsides 116a and 116b of the device portions 110a and 110b.
• the non-conductive material can be referred to as a non-conductive bonding region or bonding layer 108a of the first element 102.
• the non-conductive bonding layer 108a of the first element 102 can be directly bonded to the corresponding non-conductive bonding layer 108b of the second element 104 using dielectric-to-dielectric bonding techniques.
• non-conductive or dielectric - to-dielectric bonds may be formed without an adhesive using the direct bonding techniques disclosed at least in U.S.
• the bonding layers 108a and/or 108b can comprise a non-conductive material such as a dielectric material, such as silicon oxide, or an undoped semiconductor material, such as undoped silicon.
• direct hybrid bonds can be formed without an intervening adhesive.
• dielectric bonding surfaces 112a and 112b can be polished to a high degree of smoothness.
• the bonding surfaces 112a and 112b can be cleaned and exposed to a plasma and/or etchants to activate the surfaces 112a and 112b.
• the surfaces 112a and 112b can be terminated with a species after activation or during activation (e.g., during the plasma and/or etch processes).
• the activation process can be performed to break chemical bonds at the bonding surface 112a and 112b, and the termination process can provide additional chemical species at the bonding surface 112a and 112b that improves the bonding energy during direct bonding.
• the activation and termination are provided in the same step, e.g., a plasma to activate and terminate the surfaces 112a and 112b.
• the bonding surface 112a and 112b can be terminated in a separate treatment to provide the additional species for direct bonding.
• the terminating species can comprise nitrogen.
• the bonding surfaces 112a and 112b can be exposed to fluorine.
• the bonding interface 118 between two non-conductive materials can comprise a very smooth interface with higher nitrogen content and/or fluorine peaks at the bonding interface 118. Additional examples of activation and/or termination treatments may be found throughout U.S. Patent Nos. 9,564,414; 9,391,143; and 10,434,749, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.
• conductive contact pads 106a of the first element 102 can also be directly bonded to corresponding conductive contact pads 106b of the second element 104.
• a hybrid bonding technique can be used to provide conductor-to- conductor direct bonds along the bond interface 118 that includes covalently direct bonded non-conductive-to-non-conductive (e.g., dielectric-to-dielectric) surfaces, prepared as described above.
• the conductor-to-conductor (e.g., contact pad 106a to contact pad 106b) direct bonds and the dielectric-to-dielectric hybrid bonds can be formed using the direct bonding techniques disclosed at least in U.S. Patent Nos. 9,716,033 and 9,852,988, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.
• non-conductive (e.g., dielectric) bonding surfaces 112a, 112b can be prepared and directly bonded to one another without an intervening adhesive as explained above.
• Conductive contact pads 106a and 106b (which may be surrounded by non- conductive dielectric field regions within the bonding layers 108a, 108b) may also directly bond to one another without an intervening adhesive.
• the respective contact pads 106a and 106b can be recessed below exterior (e.g., upper) surfaces 112a and 112b of the dielectric field or non-conductive bonding layers 108a and 108b, for example, recessed by less than 30 nm, less than 20 nm, less than 15 nm, or less than 10 nm, for example, recessed in a range of 2 nm to 20 nm, or in a range of 4 nm to 10 nm.
• the recesses in the opposing elements can be sized such that the total gap between opposing contact pads is less than 15 nm, or less than 10 nm.
• the non-conductive bonding layers 108a and 108b can be directly bonded to one another without an adhesive at room temperature in some embodiments and, subsequently, the bonded structure 100 can be annealed. Upon annealing, the contact pads 106a and 106b can expand and contact one another to form a metal-to-metal direct bond.
• DBI ® Direct Bond Interconnect
• the pitch of the bonding pads 106a and 106b, or conductive traces embedded in the bonding surface of one of the bonded elements may be less than 40 microns or less than 10 microns or even less than 2 microns.
• the ratio of the pitch of the bonding pads 106a and 106b to one of the dimensions (e.g., a diameter) of the bonding pad is less than 5, or less than 3 and sometimes desirably less than 2.
• the width of the conductive traces embedded in the bonding surface of one of the bonded elements may range between 0.3 to 20 microns, e.g., in a range of 0.3 to 3 microns.
• the contact pads 106a and 106b and/or traces can comprise copper, although other metals may be suitable.
• a first element 102 can be directly bonded to a second element 104 without an intervening adhesive.
• the first element 102 can comprise a singulated element, such as a singulated integrated device die.
• the first element 102 can comprise a carrier or substrate (e.g., a wafer) that includes a plurality (e.g., tens, hundreds, or more) of device regions that, when singulated, form a plurality of integrated device dies.
• the second element 104 can comprise a singulated element, such as a singulated integrated device die, as shown in FIGS la- la.
• the second element 104 can comprise a carrier or substrate (e.g., a wafer).
• a carrier or substrate e.g., a wafer.
• the embodiments disclosed herein can accordingly apply to wafer- to-wafer, die-to-die, or die-to-wafer bonding processes.
• the first and second elements 102 and 104 can be directly bonded to one another without an adhesive, which is different from a deposition process.
• a width of the first element 102 in the bonded structure is similar to a width of the second element 104.
• a width of the first element 102 in the bonded structure 100 is different from a width of the second element 104.
• the width or area of the larger element in the bonded structure may be at least 10% larger than the width or area of the smaller element.
• the first and second elements 102 and 104 can accordingly comprise non-deposited elements.
• directly bonded structures 100 can include a defect region along the bond interface 118 in which nanometer- scale voids (nanovoids) are present.
• the nanovoids may be formed due to activation of the bonding surfaces 112a and 112b (e.g., exposure to a plasma).
• the bond interface 118 can include concentration of materials from the activation and/or last chemical treatment processes. For example, in embodiments that utilize a nitrogen plasma for activation, a nitrogen peak can be formed at the bond interface 118. In embodiments that utilize an oxygen plasma for activation, an oxygen peak can be formed at the bond interface 118.
• the bond interface 118 can comprise silicon oxynitride, silicon oxycarbonitride, or silicon carbonitride.
• the direct bond can comprise a covalent bond, which is stronger than van Der Waals bonds.
• the bonding layers 108a and 108b can also comprise polished surfaces that are planarized to a high degree of smoothness.
• the metal-to-metal bonds between the contact pads 106a and 106b can be joined such that copper grains grow into each other across the bond interface 118.
• the copper can have grains oriented along the 111 crystal plane for improved copper diffusion across the bond interface 118.
• the bond interface 118 can extend substantially entirely to at least a portion of the bonded contact pads 106a and 106b, such that there is substantially no gap between the non-conductive bonding layers 108a and 108b at or near the bonded contact pads 106a and 106b.
• a barrier layer may be provided under the contact pads 106a and 106b (e.g., which may include copper). In other embodiments, however, there may be no barrier layer under the contact pads 106a and 106b, for example, as described in U.S. Patent No. 11,195,748, which is incorporated by reference herein in its entirety and for all purposes.
• the use of the hybrid bonding techniques described herein can enable extremely fine pitch between adjacent contact pads 106a and 106b, and/or small pad sizes.
• the pitch p i.e., the distance from edge-to-edge or center- to-center, as shown in Figure la
• the pitch p can be in a range of 0.5 microns to 50 microns, in a range of 0.75 microns to 25 microns, in a range of 1 micron to 25 microns, in a range of 1 micron to 10 microns, or in a range of 1 micron to 5 microns.
• a major lateral dimension (e.g., a pad diameter) can be small as well, e.g., in a range of 0.25 microns to 30 microns, in a range of 0.25 microns to 5 microns, or in a range of 0.5 microns to 5 microns.
• the second element 104 can comprise a singulated device die, and the first element 102 can comprise a wafer. In other embodiments, both elements 102 and 104 can comprise a singulated device die. In such an embodiment, the second element 104 may be initially provided in wafer form or larger substrate and singulated to form the singulated first element 104. However, the singulation process and/or other processing steps may produce debris that can contaminate the planar bonding surface, which can leave voids and/or defects when two elements are bonded. Accordingly, prior to singulation, a protective layer can be provided over the bonding surface before activation and direct bonding in order to prevent debris from contaminating the bonding surface.
• the protective layer can comprise an organic or inorganic layer (e.g. , a photoresist) that is deposited onto the bonding surface (for example, by spin coating, atomic layer deposition, vapor coating, and so forth). Additional details of the protective layer may be found throughout U.S. Patent No. 10,714,449, the entire contents of which are incorporated by reference herein in their entirety and for all purposes.
• the wafer containing the first element can be singulated using any suitable method.
• the protective layer over the bonding surface can beneficially protect the bonding surface from debris. Before direct bonding, the protective layer can be removed from the bonding surface with a cleaning agent, for example with a suitable solvent, such as an alkaline solution or other suitable cleaning agent as recommended by the supplier of the protective layer.
• the protective layer cleaning agent can be selected such that it does not substantially roughen the smooth bonding surface of the bonding layer and does not substantially etch or contaminate the metal of the contact pad to increase the recess of the pad metal after subsequent cleaning operations.
• An excessive pad recess may form a recess that is too deep, which may prevent (or reduce the strength of) pad-to-pad bonding at the appropriate annealing conditions (e.g., annealing temperature and times).
• the cleaning agent can be applied by a fan spray of the liquid cleaning agent or other known methods.
• the cleaned bonding surface can be ashed (e.g., using an oxygen plasma) and cleaned with deionized water (DIW).
• DIW deionized water
• the cleaned element can be activated before direct bonding.
• a prebond metal recess can be less than 10 nm, for example, in a range of 1 to 5 nm/pm for metallic structures less than about 4 pm in width.
• the prebond metal recess can be between 15 and 4100 nm, for example in a range of about 0.2 to 4 nm/pm depth, depending on the depth of the TSV and the bonding temperature.
• chemical mechanical polishing can result in pads with recesses of about 0.5 nm to about 100 nm.
• the pads 106a or 106b may be protruded. The height of the protruded pads 106a or 106b with respect to the bonding surface 112a or 112b may be in a range from about 0.5 nm to about 20 nm, depending on the process specifications.
• various embodiments disclosed herein can beneficially reduce the recess depths structures that are to be hybrid direct bonded. Moreover, various embodiments can reduce within-wafer and wafer-to-wafer variability of recesses. Providing reduced and/or consistent recesses can enable the formation of very reliable metal-to-metal direct bonds at comparatively lower anneal temperatures (e.g ., less than 275 °C, preferably less than 200°C, more preferably below about 180°C, even more preferably below about 150 °C) for micron scale and submicron features. The thermal budget and/or cost of fabrication can also be reduced for the fabrication of direct hybrid bonded devices.
• Figure 2 illustrates a chart showing anneal temperatures for copper pad recesses for pads with different thicknesses. As shown, increasing recess depth utilizes higher anneal temperatures, which increases the thermal budget for the direct bonding process. Further, degradation of the copper pads can increase the recess and, accordingly, increase the anneal temperature for the opposing copper pads to partially or fully contact each other to form a metallurgical bond.
• a metallurgical bond may be formed, for example, according to the methods, structures, and apparatuses disclosed in U.S. Patent No. 11,011,494, which is incorporated by reference herein in its entirety and for all purposes.
• FIG. 3 shows a typical process that uses a thick protective coating or layer (e.g . , greater than 3 microns thick).
• a protective coating 312 is applied over a bonding surface 310 of a semiconductor element 302 having a non-conductive region 306 and conductive contact regions 308 which on top of a semiconductor region 314 (e.g., a device portion) and affixed on a dicing tape 304.
• the semiconductor region 314 can comprise a device portion having active circuitry patterned therein.
• the protective coating 312 may be applied by spin coating for example.
• the protective coating 312 may comprise, for example, a polymer such as a photoresist.
• the material used for the protective coating 312 may include a solvent.
• the semiconductor element 302 is typically baked at 135°C for about 180s to harden the protective coating 312 (e.g., photoresist) and ensure good adhesion between the protective coating 312 and the semiconductor element 302 beneath.
• the protective coating 312 can be deposited over the semiconductor element 302, and at block 322, the semiconductor element 302 can be singulated to form singulated elements 302a-302d having non-conductive regions 306a-306d and conductive contact regions 308a-308d. At block 324, the protective coating 312 can be removed.
• the process depicted in FIG. 3 can work well for interconnect processes that use ball grid arrays, controlled collapse chip connection (C4), and so forth, which use surfaces with relatively large topographic features (for example, a typical C4 process may use solder spheres that are several microns to tens of microns in diameter).
• C4 controlled collapse chip connection
• the cleaning fluid used to remove the protective layer 312 may unacceptably increase a recess 309 of the copper pads used in direct bonding.
• the relatively thick coating can have longer coating removal times (for example, from about 300 seconds to about 1200 seconds) and longer exposure to the cleaning medium which can lead to a higher degree of recess 309.
• Non-uniform removal of the protective coating 312 across the substrate can also cause an increase in the recess non-uniformity across the semiconductor element 302.
• various embodiments disclosed herein e.g ., embodiments of FIGS. 4-7) can beneficially ensure that the recess variation among the pads of the die is less than 25%, less than 10%, less than 5%, less than 2%, or less than 1%, or less than about 0.5%.
• the recess variation among the pads of the due can be in a range of 0.1% to 10%, in a range of 0.1% to 5%, or in a range of 0.5% to 5%.
• the recess variation can be less than 5 nm, less than 3 nm, less than 2 nm, or less than 1 nm, for example in a range of 0.5 nm to 5 nm in some embodiments.
• the recess variation can comprise a maximum difference between recess depths among the plurality of conductive contact features.
• the recess variation can comprise an average difference between recess depths among the plurality of conductive contact features.
• Residue management may also be challenging, as the thick protective coating 312 may result in a relatively large amount of residue, which may be difficult to fully remove from the semiconductor elements 302a-302d. Additionally, higher baking temperatures may make it more difficult to strip the protective layer 312 from the semiconductor elements 302a-302d. Additionally, at higher temperatures the protective layer 312 may react with metallic pads 308a-308d, and such a reaction may tend to roughen the metallic bonding pads 308a-308d and increase the recess of the metallic bonding pads 308a-308d.
• the recess of pads 308a-308d may range from about 60 nm to about 200 nm or more for a 2 micrometer thick metal pad, for example.
• some of the pads 308a-308d disposed at various portions of the bonding surface 310 may be clean, for example, after 180s, while pads at other portions of the bonding surface 310 may still be contaminated with the hard baked protective layer 312. Additional cleaning times of, for example, 180s or longer, may be used to strip the protective layer from the surface of pads 308a-308d or the bonding surface 310. Thus, some clean pads may be exposed to solvent action for a significant additional time.
• large variations in recess may be formed within a given die and/or between dies located at different portions of the substrate 314, for example dies located at the center and those disposed close the edge of the substrate 314.
• the recess variation i.e., the maximum difference between recess depths from the bonding surface 310 for any two pads
• the recess variation in pads within any given die may vary by an amount greater than 10 nm, e.g., 15 nm or greater.
• These large variations in recess 309 within a given die and across the substrate 314 can be problematic, because a higher bonding temperature may be needed to form adequate metal-to -metal bonds in the bonded substrates 100 of Fig. lb for pads with deeper recesses, as shown in FIG. 2.
• a thinner protective coating 412 can instead be applied over the bonding surface 310 of the semiconductor element 302, for example by spin coating, atomic layer deposition, or vapor coating.
• the thin protective coating can have a thickness of less than 3 microns, less than 2 microns, less than 0.25 microns, or less than 0.1 microns.
• the thickness of the protective coating can be in a range of 0.05 microns to 2 microns, or in a range of 0.1 microns to 0.25 microns.
• the thin protective coating can comprise, for example, an organic layer in some embodiments.
• the thin protective layer may be baked at a temperature lower than 130°C and preferably at a temperature lower than 110°C and even lower than 70°C.
• the protective layer can comprise a hydrophobic coating and/or a hydrophilic coating or combination of both.
• the protective layer can comprise a photoresist.
• the protective layer can be blanket deposited across the semiconductor element, including over contact pads 308 and over non-conductive bonding region(s) 306.
• the thinner protective layer can have less variance in coating thickness compared to a thicker layer.
• the bonding surface can be prepared for direct bonding prior to providing the protective layer 312.
• the bonding surface can be planarized before providing the protective layer 312.
• the bonding surface can be activated before providing the protective layer 312.
• Activating the first bonding surface can comprise plasma activating the first bonding surface.
• Plasma activating the first bonding surface can comprise exposing the first bonding surface to a nitrogen-containing plasma.
• the bonding surface of the semiconductor element 302 to be singulated may be briefly exposed to oxygen plasma (ashing), to form a very thin oxide (for example, a few nanometers thick) on the surface of the pads 308, before applying the protective layer 312.
• the semiconductor element 302 can remain covered with the protective layer 312 for any suitable time period.
• the semiconductor element 302 can be prepared for direct bonding and coated with the protective layer 312, and subsequently stored and/or transported to a different location or facility.
• the protected semiconductor element 302 can remain protected by the protective layer 312 for a period greater than 24 hours, or for a period of a week or longer, or a month or longer.
• the semiconductor element may be singulated into a plurality of semiconductor elements having bonding surfaces 310a- 3 lOd, non-conductive regions 306a-306d and conductive contact regions 308a-308d.
• the protective layer 312 can be removed in any suitable manner before direct bonding.
• the protective layer 312 can be removed with any suitable cleaning process.
• a first cleaning process can utilize a highly alkaline solution, for example dilute tetramethylammonium hydroxide, or other suitable solvents recommended by the supplier of the protective layer (such as blends of polygycols, or a modified ketone, for example) to strip the protective coating 412.
• the modified ketone can have minimal interaction with a dicing tape (unlike acetone, which may readily attack the dicing tape) and/or the metal of the contact pads 306a and 306b.
• the coated photoresist protective layer may be exposed to UV light to degrade the resist layer, thus reducing the cleaning times to strip the protective layer from the bonding surface of the semiconductor element.
• the protective layer 312 may be removed more quickly (e.g., in about 60 s or less) than a thick protective layer as depicted in FIG. 3. Overstripping times can also be significantly shorter, for example less than 30 seconds, less than 20 seconds, or less than 15 seconds, whereas overstripping times for thicker layers can often exceed 1 minute, 2 minutes, or more. Additionally, less debris may remain.
• a second cleaning process can additionally or alternatively be used.
• the second cleaning process can be used for cleaning dicing particles and other debris from dies and dicing sheet.
• the first cleaning step may strip the protective layer 312 from the bonding surface of the semiconductor element and the second cleaning step may comprise a cleaning solution tailored to remove unwanted organic materials and unwanted particulates from the plurality of semiconductor elements and the dicing lanes of the dicing tape.
• the first cleaning step may comprise a dry process, for example applying oxygen plasma to strip the very thin organic protective layer from the surface of the singulated semiconductor elements.
• the second cleaning step may comprise a wet cleaning solution.
• a suitable solvent containing a suitable surfactant or particulate removing agent may be used to clean the ashed surface of the semiconductor element.
• DI deionized
• the thin protective coating can utilize a cleaning fluid, as explained above, that is more amenable to the materials used in the semiconductor element.
• the shorter duration of the removal process and overall cleaning times can beneficially reduce the degree to which the copper pads are degraded by the cleaning process, as compared to processes using a thicker protection layer and longer cleaning processes.
• the embodiment of FIG. 4 can accordingly provide shallower recesses 309 and more consistent recess depths (i.e., less recess variation), which can improve direct bond reliability in hybrid bonded structures.
• no two pads may have a difference in recess depths of greater than 5 nm, greater than 3 nm, greater than 1 nm, or greater than 0.5 nm.
• the recess variation among the pads of the die is less than 25%, less than 10%, less than 5%, less than 2%, or less than 1%, or less than about 0.5%.
• the recess variation among the pads of the due can be in a range of 0.1% to 10%, in a range of 0.1% to 5%, or in a range of 0.5% to 5%.
• the recess variation can be less than 5 nm, less than 3 nm, less than 2 nm, or less than 1 nm, for example in a range of 0.5 nm to 5 nm in some embodiments.
• the recess variation can comprise a maximum difference between recess depths among the plurality of conductive contact features.
• the recess variation can comprise an average difference between recess depths among the plurality of conductive contact features.
• FIG. 5 illustrates another example process 500 in which a thin protective layer 512 is provided over a passivation layer 514 according to some embodiments.
• a passivation layer 514 can be selectively provided over the contact pads 308.
• a wet chemical process and/or a plasma process can be used to selectively oxidize the contact pads 308.
• a few monolayers of a metal complexing agent such as benzotriazole or a similar compound may be selectively coated on the contact pads 308 by known methods.
• a thin protective layer 512 (e.g., a protective layer less than about 2 pm thick, and preferably less than about 0.2 pm thick) can be provided over the pads 308 and the non-conductive bonding region 306 of the element.
• the protective layer 512 is blanket deposited over the element.
• the element 302 can be singulated, and, at step 526, the protective layer 512 can be removed as explained above.
• the protective layer may be striped in less than about three minutes
• the passivation layer 514 can be selectively removed from the contact pads 308 by a wet etch, a foaming gas, or other suitable means. Additional cleaning may be performed for particle management.
• FIG. 6 illustrates another example process 600 according to some embodiments, in which the contact pads 308 protrude above the non-conductive bonding material 306 before application of the protective layer 612.
• the contact pads 308 may protrude above the bonding surface 310 of the non-conductive bonding material 306 (for example, if the non-conductive bonding material 306 has been etched previously or as the result of a chemical-mechanical-polished or CMP process).
• a protective layer 612 (which may be the same as the protective layer 412) can be provided over the protruding contact pads 308 and the non-conductive bonding material 306, and the element 302 can be singulated.
• the protective layer 612 can be removed.
• removing the protective layer 612 also causes some removal of the surface of the contact pads 308, reducing the protrusion of the contact pads 308 above the surface of the non-conductive bonding material 306.
• the bonding surface can be planarized (for example, by a chemical-mechanical-polishing or CMP process) such that the contact pads 308 are recessed relative to the surface of the non-conductive bonding material 306. Pad recess may also be controlled by managing the copper/oxygen interaction.
• unwanted protrusion on the pads 308 may be removed by cleaning the bonding surface 310 and pads 308 with a dilute pad cleaning agent to form a known or desired recess in the pads 308.
• the cleaning may form a known recess without degrading the bonding surface 310 or the bonding surface of the recessed pads.
• the cleaning agent may not result in significant roughening of the bonding surface 310 or the pads 308 and may not result in the formation of unwanted particulates on the bonding surfaces that could impair direct between opposing substrates without adhesive material.
• FIG. 7 illustrates an example process 700 according to some embodiments, in which a protective coating is selectively provided over the contact pads, as opposed to being deposited as a blanket coating.
• a passivation layer 714 (which may be similar to or the same as passivation layer 514) can be applied on the pads 308, and a protective layer 712 can be applied over the passivation layer 714.
• only a passivation layer 714 may be selectively applied to protect the pads without the use of a protective layer 712, which can reduce recess variation and recess increases due to removal of the protective layer 712.
• no organic blanket layer may be provided over the entire surface of the semiconductor element.
• the passivation layer 714 can serve as the protective layer to protect the pads during singulation, such that a separate protective layer 712 may not be applied.
• the passivation layer 714 can be provided to oxidize the pads, which can resist cleaning chemicals better than copper.
• the element 302 can be diced while maintaining a wet surface. After dicing, the element 302 can be cleaned, for example, using water and surfactants.
• the passivation layer on the pad can be removed using any suitable method. For example, the passivation layer can be removed using a dilute acid or base solution, and/or by an oxidizer/caustic to remove the hydrophobic coated region without substantially attacking the copper pads.
• RIE reactive ion etching
• a saw can be used to singulate the element.
• RTF can be used to singulate the semiconductor element into a plurality of singulated device dies.
• the protective layer can be provided to a thickness of approximately 1 micron, e.g., in a range of 1 micron to 3 microns.
• the RTF process may be used to singulate the element, and the protective layer can protect the pads during RIE.
• the RIE process may reduce the thickness of the protective layer sufficiently such that a subsequent cleaning process can be used to remove the remaining thin protective layer without causing an excessively large recess.
• the protective layer 712 if present, can be removed and, at block 726, the passivation layer 714 can be removed to expose the surface of the conductive contact regions 308a-d.
• conductive pads 308 having varying dimensions may be formed in dielectric layer 306 and the conductive pads 308 may have exposed bonding surfaces.
• the various conductive features within a die may comprise pads with a width of 2 to 4 microns, 5 to 8 microns, or 10 to 15 microns.
• Conductive pads may be arranged in arrays having defined pitches. In some embodiments, the pitch of smaller pads may be smaller than the pitch of larger pads.
• the methods described herein can result in recesses formed on the various pads with varying width and pitch being the same or similar.
• the variation in recess induced by protective layer coating, singulation, protective layer stripping, and other surface preparation steps may be less than about 3 nm across a given die, for example, less than 2 nm or less than 1 nm across a die.
• the recess variation across a die can be in a range of 0.3 nm to 3 nm, in a range of 0.5 nm to 3 nm, or in a range of 1 nm to 3 nm.
• a bonded structure (such as the bonded structure 100) can be formed at a comparatively lower temperature compared to dies with deeper recesses and/or large variation in recesses with a given die.
• dies having larger differences in thermal expansion may be directly bonded without an adhesive layer.
• the thermal expansion of semiconductor element 104 may be different from that of semiconductor element 102.
• the difference between the thermal expansion of the bonded semiconductor elements 102 and 104 may be at least 10%.
• the words “comprise,” “comprising,” “include,” “including” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.”
• the word “coupled,” as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements.
• the word “connected,” as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements.
• the words “herein,” “above,” “below,” and words of similar import when used in this application, shall refer to this application as a whole and not to any particular portions of this application.
• first element when a first element is described as being “on” or “over” a second element, the first element may be directly on or over the second element, such that the first and second elements directly contact, or the first element may be indirectly on or over the second element such that one or more elements intervene between the first and second elements.
• words in the above Detailed Description using the singular or plural number may also include the plural or singular number respectively.
• the word “or” in reference to a list of two or more items that word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.
• conditional language used herein such as, among others, “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states. Thus, such conditional language is not generally intended to imply that features, elements and/or states are in any way required for one or more embodiments.

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