WO2022165992A1 - 金属粉芯集成芯片电感的制备方法 - Google Patents
金属粉芯集成芯片电感的制备方法 Download PDFInfo
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- WO2022165992A1 WO2022165992A1 PCT/CN2021/087837 CN2021087837W WO2022165992A1 WO 2022165992 A1 WO2022165992 A1 WO 2022165992A1 CN 2021087837 W CN2021087837 W CN 2021087837W WO 2022165992 A1 WO2022165992 A1 WO 2022165992A1
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- WIPO (PCT)
- Prior art keywords
- electroplating
- metal powder
- chamfering
- product
- integrated chip
- Prior art date
Links
- 239000000843 powder Substances 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000009713 electroplating Methods 0.000 claims abstract description 41
- 238000004804 winding Methods 0.000 claims abstract description 39
- 238000000576 coating method Methods 0.000 claims abstract description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000011248 coating agent Substances 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 28
- 238000009413 insulation Methods 0.000 claims abstract description 27
- 238000000227 grinding Methods 0.000 claims abstract description 22
- 238000000748 compression moulding Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 46
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 18
- 238000000465 moulding Methods 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 210000001161 mammalian embryo Anatomy 0.000 claims description 15
- 238000007731 hot pressing Methods 0.000 claims description 13
- 238000004806 packaging method and process Methods 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 1
- 239000003973 paint Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000011161 development Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 31
- 239000010410 layer Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 11
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000005469 granulation Methods 0.000 description 3
- 230000003179 granulation Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- -1 iron silicon aluminum Chemical compound 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEVZIAVUCQDJFL-UHFFFAOYSA-N [Cr].[Fe].[Si] Chemical compound [Cr].[Fe].[Si] XEVZIAVUCQDJFL-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- AGXUVMPSUKZYDT-UHFFFAOYSA-L barium(2+);octadecanoate Chemical compound [Ba+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O AGXUVMPSUKZYDT-UHFFFAOYSA-L 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 210000002257 embryonic structure Anatomy 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 2
- 239000010985 leather Substances 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002707 nanocrystalline material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000007619 statistical method Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0206—Manufacturing of magnetic cores by mechanical means
- H01F41/0246—Manufacturing of magnetic circuits by moulding or by pressing powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/001—Magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/02—Casings
- H01F27/022—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/24—Magnetic cores
- H01F27/255—Magnetic cores made from particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F3/00—Cores, Yokes, or armatures
- H01F3/08—Cores, Yokes, or armatures made from powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/06—Coil winding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/10—Connecting leads to windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
- H01F2017/048—Fixed inductances of the signal type with magnetic core with encapsulating core, e.g. made of resin and magnetic powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/005—Impregnating or encapsulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/06—Coil winding
- H01F41/064—Winding non-flat conductive wires, e.g. rods, cables or cords
Definitions
- the invention relates to inductance technology, in particular to a preparation method of a metal powder core integrated chip inductance.
- Traditional inductors include paste-terminated electroplating type integrated inductors, copper terminal electrode type one-piece inductors, and built-in T-shaped magnetic core leaf-swing winding electrode type one-piece inductors; the paste-terminated electroplating type one-piece inductors are due to Both sides are integrally capped, and the large area of tin stacking on the side during SMD installation is likely to cause the electrodes to be exposed and lead to circuit conduction, which reduces the density of integrated circuits and wastes the space of the circuit board.
- the slurry-terminated electroplating type integrated inductor has 4 metal layers including copper/silver/nickel/tin at the electrode welding position, which are copper/silver/nickel/tin.
- Parasitic capacitance is easily formed between the 4 metal layers, which increases the DC resistance of the inductor.
- the self-resonant frequency of the inductor is reduced; the lead copper sheet of the copper sheet terminal electrode type integrated inductor is bent from the side of the product to the bottom.
- the bending width and thickness of the copper sheet will increase the size of the product and limit the coil design, resulting in limited product characteristics.
- the density of integrated circuits is reduced; the built-in T-shaped magnetic core leaf is placed on the wire-wound electrode type one-piece inductor, the production investment is large, the investment is large, and the product production cost is high, which is not conducive to large-scale production. Production cannot meet market demand.
- the purpose of the present invention is to provide a metal powder core integrated chip inductor that only retains the bottom electrode or "L"-shaped electrode and is covered with insulation.
- the chip-end electrode type integrated inductor and the technology of the built-in T-shaped magnetic core leaf swing on the wire-wound electrode type product reduce the installation size of the product on the circuit board and increase the installation space of the integrated circuit PCB board, which is an excellent tool for the integrated circuit industry.
- the highly integrated development of the product creates favorable conditions; the overall performance of the product is greatly improved under the same size.
- the technical solution provided by the present invention is: a preparation method of a metal powder core integrated chip inductor, which includes the following main steps: winding coil, molding, chamfering, curing, insulating coating, grinding, electroplating .
- the process of the present invention can also adopt the following steps: winding hollow coil, molding, green embryo chamfering, hot pressing curing, cooked embryo chamfering, insulation coating, grinding, electrode nickel plating, electrode plating Copper, secondary insulation coating, secondary grinding, electroplating metallized electrodes, testing packaging.
- the winding method of the hollow coil is multi-axis winding on a winding jig, and corresponding technical standards must be referred to.
- the compression molding is performed by placing the winding jig containing the hollow coil into the mold of the molding machine, then placing the coil into the mold cavity at a fixed point, and filling the mold cavity with metal powder. ;
- the molding density is not less than 3g/cm 3 .
- the green embryo chamfering is to press the molded product, mix it with the chamfering medium in a certain proportion according to the weight of the product, and then put it into the chamfering equipment to complete the chamfering operation.
- the hot-pressing curing is to place the product neatly into the cavity of the hot-pressing equipment, the temperature of the hot-pressing equipment cavity is controlled to be not less than 100 ° C, and the pressure of not less than 0.5MPa is used to carry out not less than 5 minutes of holding pressure to complete the hot press curing operation.
- the cooked embryo chamfering is to mix the hot-pressed solidified product with the chamfering medium in a certain proportion and then put it into the chamfering equipment to complete the cooked embryo chamfering operation.
- the insulation coating is to use polyimide material to perform insulation coating treatment on the surface of the product, the thickness of the insulating layer is not less than 3um, and the product is coated at a temperature of 100 °C or more after baking for 0.5 um. The insulating layer is cured for more than one hour.
- the grinding is to arrange the products neatly into the jig, and use a high-precision grinder to grind the products.
- the single side of the product is not less than 3um (the thickness of the insulating layer), and the end of the product is exposed after grinding. Enamelled copper wire section.
- the electrode copper plating is to electroplate the ground product with a copper layer of not less than 1um.
- the secondary insulation coating is to use polyimide material to conduct insulation coating treatment on the surface of the product, the thickness of the insulation layer is not less than 3um, and the product is coated and baked at above 100 °C Bake for more than 0.5 hours to cure the insulating layer.
- the secondary grinding is to arrange the products neatly into the jig, and use a high-precision grinder to grind the products.
- the single side of the products is not less than 3um and exposes the copper conductor plating at the bottom of the products.
- the electroplating metallized electrode is to combine the product with one or both of the vacuum coating process (PVD technology) and the traditional electroplating process, and then increase the amount of copper on the surface of the original one-time copper plating.
- PVD technology vacuum coating process
- Metal and alloy material coatings are required to increase product solderability, solder resistance and adhesion.
- the inspection and packaging is to inspect the products to remove defective products in size, appearance and characteristics, and then package them.
- the technical advantage of the present invention is to provide a metal magnetic powder core integrated chip inductor that only retains the bottom electrode or the "L"-shaped electrode and uses insulating materials to cover the product body, saving the paste-terminated electroplating type integrated chip inductor,
- the size of the tin stacking on the side of the copper terminal electrode type integrated inductor reduces the installation size of the product on the circuit board, increases the installation space of the integrated circuit PCB board, and greatly reduces the production cost.
- the product has high reliability and high cost performance. Create favorable conditions for the highly integrated development of the integrated circuit industry; under the condition of the same size, the overall performance of the product is greatly improved.
- the manufacturing process uses vacuum coating technology (PVD technology) or traditional electroplating process, thereby saving manufacturing costs and improving process yield.
- PVD technology vacuum coating technology
- electroplating process traditional electroplating process
- the thickness of the insulating coating of the product is more than 3um by adopting a new insulating coating material and insulating coating process, and the insulating coating material is a thermosetting environment-friendly polyimide material.
- the inductive device prepared by this scheme has the advantages of high frequency, low loss, chipization, miniaturization, high voltage resistance, and high reliability, which fully conforms to the development trend of high-end electronic components and has a wide range of applications. It can meet the needs of smart terminals, 5G, industrial Internet, data centers, new energy vehicles, smart grids, aerospace, high-speed rail and other industries.
- Fig. 1 is a process flow diagram of the present invention.
- FIG. 2 is a comparison diagram of the load current characteristics of the present invention and products on the market.
- Fig. 3 is the characteristic comparison diagram of the present invention and the product on the market.
- Fig. 4 is the characteristic measurement data of the product of the present invention.
- FIG. 5 is a schematic diagram of the bottom electrode product of the present invention.
- Figure 6 is a schematic diagram of an "L"-shaped electrode product of the present invention.
- Figure 7 is a front X-ray perspective view of the product of the present invention.
- Figure 8 is a side X-ray perspective view of the product of the present invention.
- FIG. 9 is a graph of aging load test data of the present invention.
- Figure 10 is a graph of solderability data of the present invention.
- Figure 11 is a graph of thermal weldability data of the present invention.
- FIG. 12 is a graph of thrust test data of the present invention.
- Figure 13 is a graph of the hundred grid test data of the present invention.
- Figure 14 is a graph of the hydrochloric acid test data of the present invention.
- Figure 15 is a graph of high temperature storage data of the present invention.
- Figure 16 is a graph of steam aging test data of the present invention.
- FIG. 17 is a data chart of the metallographic section test data of the present invention.
- Figure 18 is a graph of interlayer test data of the present invention.
- Example 1 The bottom electrode prepared in this example
- the preparation method of the metal powder core integrated chip inductor includes the following steps: winding hollow coil, molding, green embryo chamfering, hot pressing and curing, cooked embryo chamfering, insulation coating, grinding, electrode nickel plating, electrode copper plating, two Secondary insulation coating, secondary grinding, electroplating metallized electrodes, testing packaging;
- the selection and winding of enamelled copper wire have undergone repeated tests, and the parameters of the winding equipment and wire specifications that can be mass-produced have been obtained.
- the winding method adopts multi-axis winding on the winding jig, which saves the material and increases the winding speed.
- the second step Compression molding: using carbonyl iron powder or alloy materials (iron silicon, iron silicon chromium, iron nickel, iron silicon aluminum and amorphous nanocrystalline material systems) molding, the R & D team has undergone many tests, recorded data, After statistical analysis, the best carbonyl powder ingredient formula is screened out as follows:
- D90 is a cumulative distribution of particles of 90 % particle size. That is, the volume content of particles smaller than this particle size accounts for 90% of all particles.
- Epoxy resin is used as a binder. After powder granulation is completed, zinc stearate, barium stearate or other mold release lubricants are added. agent;
- the winding jig containing the hollow coil into the mold of the molding machine, then place the coil into the mold cavity at a fixed point, and fill the mold cavity with metal powder to stamp and form the product, and the molding density is not less than 3g/cm 3 .
- the third step raw embryo chamfering: add no less than one thousandth of the chamfering medium to the molded product according to the weight of the product and put it into the chamfering equipment to complete the chamfering operation.
- the chamfering time is not less than 5 minutes.
- the chamfering medium is one or more of high-density and high-hardness powders such as alumina, zirconia, and silicon carbide.
- Step 5 Chamfering of cooked embryos: Add the chamfering medium larger than the weight of the product to the hot-pressed product and put it into the chamfering equipment to complete the chamfering of the cooked embryo.
- the chamfering time is not less than 5 minutes.
- the chamfering medium is a special chamfering stone (such as one or more of granular zirconia, granular alumina and other high-density and high-hardness particles).
- Step 6 Insulation coating: Use polyimide material to conduct insulation coating on the surface of the product, the thickness of the insulation layer is not less than 3um, and bake the insulation layer above 100 °C for more than 0.5 hours after coating the product to cure the insulation layer.
- Step 7 Grinding: Arrange the products neatly into the fixture, and use a high-precision grinder to grind the products.
- the single side of the product is not less than 3um, and the enameled copper wire section at the end of the product is exposed after grinding.
- the eighth step Electrode nickel plating: Electroplate the ground product with a nickel layer of not less than 0.3um.
- the ninth step Electrode copper plating: Electroplate the nickel-plated product with a copper layer of not less than 1um.
- the electrode nickel plating in the eighth step can be electrode copper plating, and then the electrode copper plating in the ninth step is changed to electrode nickel plating; other conventional metals on the market can also be used for electroplating as required.
- the tenth step secondary insulation coating: use polyimide series nanomaterials to conduct insulation coating treatment on the surface of the product, the thickness of the insulating layer is not less than 3um, and bake the product at 100 °C for more than 0.5 hours after coating to cure. Insulation.
- the eleventh step Secondary grinding: Arrange the products neatly into the fixture, and use a high-precision grinder to grind the products.
- the single side of the products is not less than 3um and the copper conductor plating on the bottom of the products is exposed.
- the thirteenth step inspection and packaging: the products are inspected to remove defective products in size, appearance and characteristics, and then packaged.
- Example 2 The "L-shaped" electrode prepared in this example
- the preparation method of the metal powder core integrated chip inductor comprises the following steps: winding hollow coil, molding, green embryo chamfering, hot pressing and curing, cooked embryo chamfering, insulation coating, grinding, electroplating, testing and packaging;
- the selection and winding of enamelled copper wire have undergone repeated tests, and the parameters of the winding equipment and wire specifications that can be mass-produced have been obtained.
- the winding method adopts multi-axis winding on the winding jig, which saves the material and increases the winding speed.
- the second step Compression molding: using carbonyl iron powder or alloy materials (iron silicon, iron silicon chromium, iron nickel, iron silicon aluminum and amorphous nanocrystalline material systems) molding, the R & D team has undergone many tests, recorded data, After statistical analysis, the best carbonyl powder ingredient formula is screened out as follows:
- D90 is the cumulative distribution of the particles as 90% particle size. That is, the volume content of particles smaller than this particle size accounts for 90% of all particles.)
- Epoxy resin is used as a binder. After powder granulation is completed, zinc stearate, barium stearate or other mold release is added. lubricant;
- the winding jig containing the hollow coil into the mold of the molding machine, then place the coil into the mold cavity at a fixed point, and fill the mold cavity with metal powder to stamp and form the product, and the molding density is not less than 3g/cm 3 .
- the third step raw embryo chamfering: add no less than one thousandth of the chamfering medium to the molded product according to the weight of the product and put it into the chamfering equipment to complete the chamfering operation.
- the chamfering time is not less than 5 minutes.
- the chamfering medium is one or more of high-density and high-hardness powders such as alumina, zirconia, and silicon carbide.
- Step 5 Chamfering of cooked embryos: Add the chamfering medium larger than the weight of the product to the hot-pressed product and put it into the chamfering equipment to complete the chamfering of the cooked embryo.
- the chamfering time is not less than 5 minutes.
- the chamfering medium is a special chamfering stone (such as one or more of granular zirconia, granular alumina and other high-density and high-hardness particles).
- Step 6 Insulation coating: Use polyimide material to conduct insulation coating on the surface of the product, the thickness of the insulation layer is not less than 3um, and bake the insulation layer above 100 °C for more than 0.5 hours after coating the product to cure the insulation layer.
- Step 7 Grinding: Arrange the products neatly into the fixture, and use a high-precision grinder to grind the products.
- the single side of the product is not less than 3um, and the enameled copper wire section at the end of the product is exposed after grinding.
- the eighth step the first electroplating: the products after grinding are electroplated with nickel bottom by traditional process, and the thickness of the coating is not less than 0.3um to increase the electrode adhesion.
- the ninth step the second electroplating: on the basis of the nickel-plated bottom, the copper layer is electroplated by the traditional process, and the thickness of the coating is not less than 1.0um to increase the conductivity.
- the electrode nickel plating in the eighth step can be electrode copper plating, and then the electrode copper plating in the ninth step is changed to electrode nickel plating; other conventional metals on the market can also be used for electroplating as required.
- the eleventh step inspection and packaging: the products are inspected to eliminate defective products in size, appearance and characteristics, and then packaged.
- the electroplating process of this embodiment may also adopt one or a combination of vacuum coating process (PVD technology) and traditional electroplating process as required.
- PVD technology vacuum coating process
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Abstract
本发明提供的金属粉芯集成芯片电感的制备方法,它包括有以下步骤:绕制线圈、模压成型、倒角、固化、绝缘包覆、研磨、电镀。本次发明的集成芯片电感迭代了现行业的浆料封端电镀型一体成型电感、铜片端电极型一体成型电感及内置T字型磁芯叶摆上缠线电极型产品的技术,从而减小产品在电路板上的安装尺寸,增加了集成电路PCB板的安装空间,本发明可以实现智能制造,做到资源节约,环境友好,可以为世界电子产业发展创造独特价值。
Description
本发明涉及电感技术,尤其是指金属粉芯集成芯片电感的制备方法。
传统电感包括有浆料封端电镀型一体成型电感、铜片端电极型一体成型电感、内置T字型磁芯叶摆上缠线电极型一体成型电感;其中浆料封端电镀型一体成型电感因两侧整体封端,贴片安装时侧面堆锡面积大容易造成电极外露引起电路导通,减小了集成电路密集度,浪费了电路板的空间。同时浆料封端电镀型一体成型电感在电极焊接位置包括本体有4个金属层,分别是铜/银/镍/锡,4个金属层之间容易形成寄生电容,增加了电感的直流电阻,降低了电感的自谐振频率;铜片端电极型一体成型电感的引线铜片是从产品侧边折弯到底部,折弯幅度和铜片厚度会加大产品尺寸并限制线圈设计导致产品特性受限,浪费了电路板空间的同时,减小了集成电路密集度;内置T字型磁芯叶摆上缠线电极型一体成型电感的生产投资大,投资大、产品生产成本高,不利于大规模生产,满足不了市场需求。
本发明的目的在于提供一种只保留底部电极或“L”型电极并采用绝缘包覆,本次发明的金属粉芯集成芯片电感迭代了现行业的浆料封端电镀型一体成型电感、铜片端电极型一体成型电感及内置T字型磁芯叶摆上缠线电极型产品的技术,从而减小产品在电路板上的安装尺寸,增加了集成电路PCB板的安装空间,为集成电路产业的高度集成化发展创造有利条件;在尺寸相同情况下产品综合性能大幅提升。
为实现上述目的,本发明所提供的技术方案为:金属粉芯集成芯片电感的制备方法,它包括有以下主要步骤:绕制线圈、模压成型、倒角、固化、绝缘包覆、研磨、电镀。
作为上述工艺的扩充,本发明的工艺还可以采用以下步骤:绕制空心线圈、模压成型、生胚倒角、热压固化、熟胚倒角、绝缘包覆、研磨、电极镀镍、电极镀铜、二次绝缘包覆、二次研磨、电镀金属化电极、检测包装。
作为上述工艺的优选步骤:所述空心线圈的绕制,其绕制方式采用在绕线治具上多轴绕制,必须参照相应的技术标准。
作为上述工艺的优选步骤:所述模压成型是通过将含空心线圈的绕线治具放入成型机的模具中,再将线圈定点植入模腔,在模腔中注满金属粉末冲压成型制品;成型密度不小于3g/cm
3。
作为上述工艺的优选步骤:所述的生胚倒角是将模压成型制品,按制品重量与倒角介质以一定比例混合后放入倒角设备完成倒角作业。
作为上述工艺的优选步骤:所述热压固化是将制品整齐排版放入热压设备型腔内,热压设备型腔的温度控制不小于100℃,使用不小于0.5MPa的压力进行不低于5分钟的保压完成热压固化作业。
作为上述工艺的优选步骤:所述的熟胚倒角是将热压固化后的制品按制品重量与倒角介质以一定比例混合后放入倒角设备完成熟胚倒角作业。
作为上述工艺的优选步骤:所述的绝缘包覆是使用聚酰亚胺系材料对制品表面进行绝缘包覆处理,绝缘层厚度为不低于3um,制品包覆后在100℃以上烘烤0.5小时以上固化绝缘层。
作为上述工艺的优选步骤:所述的研磨是将制品整齐排列到治具内,使用高精密磨床对制品进行研磨作业,制品单边研磨不小于3um(绝缘层厚度),研磨后露出制品端部漆包铜线截面。
作为上述工艺的优选步骤:所述的电极镀铜是将研磨后的制品电镀一层不小于1um的铜层。
作为上述工艺的优选步骤:所述的二次绝缘包覆是使用聚酰亚胺系材料对制品表面进行绝缘包覆处理,绝缘层厚度为不低于3um,制品包覆后在100℃以上烘烤0.5小时以上固化绝缘层。
作为上述工艺的优选步骤:所述的二次研磨是将制品整齐排列到治具内,使用高精密磨床对制品进行研磨作业,制品单边研磨不小于3um并露出制品底部铜导体镀层。
作为上述工艺的优选步骤:所述的电镀金属化电极是将制品采用真空镀膜工艺(PVD技术)、传统电镀工艺中的一种或两种工艺结合,在原一次镀好铜的表面上再增加所需要的金属及合金材料镀层,以增加制品可焊性,耐焊性和附着力。
作为上述工艺的优选步骤:所述的检测包装是将制品进行检测以剔除尺寸、外观及特性不良品,然后进行包装。
本发明的技术优势在于:
1)、本发明的技术优势在于提供一种只保留底部电极或“L”型电极并采用绝缘材料包覆产品本体的金属磁粉芯集成芯片电感,节省了浆料封端电镀型一体成型电感、铜片端电极型一体成型电感的侧面堆锡尺寸,从而减小产品在电路板上的安装尺寸,增加了集成电路PCB板的安装空间,并大幅降低生产成本,产品具有高可靠性,高性价比,为集成电路产业的高度集成化发展创造有利条件;在尺寸相同情况下产品综合性能大幅提升。
2)、制造过程使用真空镀膜技术(PVD技术)或传统的电镀工艺,从而节约制造成本,提高制程良率。
3)、采用新的绝缘包覆材料和绝缘包覆工艺将产品绝缘涂层厚度做到3um以上,绝缘包覆材料为热固型环保聚酰亚胺系材料。
4)、采用本方案制备的电感器件具备高频率、低损耗、芯片化、小型化、耐高压、高可靠的优点,完全符合电子元器件高端产品发展趋势,其应用范围广,此类传感器件能满足智能终端、5G、工业互联网、数据中心、新能源汽车、智能电网、航空航天、高铁等行业的需求。
图1为本发明的工艺流程图。
图2为本发明与市面产品的负载电流特性对比图。
图3为本发明与市面产品的特性对比图。
图4为本发明产品的特性实测数据。
图5为本发明的底部电极产品示意图。
图6为本发明的“L”型电极产品示意图。
图7为本发明的产品正面X光透视图。
图8为本发明的产品侧面X光透视图。
图9为本发明的老化负载试验数据图表。
图10为本发明的可焊性数据图表。
图11为本发明的热焊性数据图表。
图12为本发明的推力试验数据图表。
图13为本发明的百格试验数据图表。
图14为本发明的盐酸试验数据图表。
图15为本发明的高温储存数据图表。
图16为本发明的蒸汽老化试验数据图表。
图17为本发明的金相切片试验数据图表。
图18为本发明的层间试验数据图表。
下面结合所有附图对本发明作进一步说明,参见附图1至附图5,本发明的较佳实施例为:
实施例1:本实施例制备的是底部电极
金属粉芯集成芯片电感的制备方法包括以下步骤:绕制空心线圈、模压成型、生胚倒角、热压固化、熟胚倒角、绝缘包覆、研磨、电极镀镍、电极镀铜、二次绝缘包覆、二次研磨、电镀金属化电极、检测包装;
其中,
第一步骤:绕制空心线圈:根据制品规格设定要求制作空心线圈;其绕制方式采用在绕线治具上多轴绕制,必须达到相应的技术标准。漆包铜线的选取及绕制经过反复试验,取得了可以批量生产的绕线设备参数及线材的规格数据。绕线方式采用在绕线治具上多轴绕制,在节省料片的同时提升绕线速度。
第二步骤:模压成型:采用羰基铁粉或合金材料(铁硅,铁硅铬,铁镍,铁硅铝及非晶纳米晶等材料体系)成型、研发团队经过多次的试验,记录数据,统计分析后筛选出最佳的羰基粉末成份配方如下:
将羰基铁粉/合金材料/铁氧体材料:环氧树脂:丙酮按照重量比例100:≤7:≤20混合均匀,然后在温度为≤80℃条件下保温1-3小时,然后进行研磨造粒,制备的粉末需要满足球形度≥60%,且粉末粒径满足:D50≤30μm,D90≤90μm,D10≤20μm;(D10是颗粒累积分布为10%的粒径,即小于此粒径的颗粒体积含量占全部颗粒的10%,D50是颗粒累积分布为50%的粒径。也叫中位径或中值粒径,这是一个表示粒度大小的典型值。D90是颗粒累积分布为90%的粒径。即小于此粒径的颗粒体积含量占全部颗粒的90%。)环氧树脂作为粘结剂,粉末造粒完成后添加硬脂酸锌、硬脂酸钡或其他脱模润滑剂;
将含空心线圈的绕线治具放入成型机的模具中,再将线圈定点植入模腔,在模腔中注满金属粉末冲压成型制品,成型的密度为不小于3g/cm
3。
成型机具体压力的选取:压力大了会把线圈的漆皮刮伤或压伤,压力不够,生产出来的制品密度不足,会导致制品缺角、电感值低等不良,经过大量的试验,统计数据筛选出既能满足制品质量,生产效率及良品率最好的参数。
第三步骤:生胚倒角:将模压成型制品按制品重量添加不小于千分之一的倒角介质后放入倒角设备完成倒角作业,倒角时间不低于5分钟,所述的倒角介质为氧化铝、氧化锆、碳化硅等高密度高硬度粉末中的一种或多种。
第四步骤:热压固化:将制品整齐排版放入热压设备型腔内,热压设备型腔的温度控制不小于100℃,使用不小于0.5MPa的压力进行不低于5分钟的保压完成热压固化作业。
第五步骤:熟胚倒角:将热压后的制品按制品重量添加大于制品重量的倒角介质后放入倒角设备完成熟胚倒角作业,倒角时间不低于5分钟,所述的倒角介质为专用倒角石(如颗粒状氧化锆、颗粒状氧化铝等高密度高硬度颗粒物中的一种或多种)。
第六步骤:绝缘包覆:使用聚酰亚胺系材料对制品表面进行绝缘包覆处理,绝缘层厚度为不低于3um,制品包覆后在100℃以上烘烤0.5小时以上固化绝缘层。
第七步骤:研磨:将制品整齐排列到治具内,使用高精密磨床对制品进行研磨作业,制品单边研磨不小于3um,研磨后露出制品端部漆包铜线截面。
第八步骤:电极镀镍:将研磨后的制品电镀一层不小于0.3um的镍层。
第九步骤:电极镀铜:将镀镍后的制品电镀一层不小于1um的铜层。
上述第八步骤的电极镀镍可以采用电极镀铜,再将第九步骤的电极镀铜改为电极镀镍;也可以根据需要采用市面其它常规金属进行电镀。
第十步骤:二次绝缘包覆:使用聚酰亚胺系纳米材料对制品表面进行绝缘包覆处理,绝缘层厚度为不低于3um,制品包覆后在100℃以上烘烤0.5小时以上固化绝缘层。
第十一步骤:二次研磨:将制品整齐排列到治具内,使用高精密磨床对制品进行研磨作业,制品单边研磨不小于3um并露出制品底部铜导体镀层。
第十二步骤:电镀金属化电极:将制品采用真空镀膜工艺(PVD技术)、传统电镀工艺中的一种或两种工艺结合,在镀好镍底铜层(铜底镍层)的表面上再增加所需要的金属及合金材料镀层,所述的金属为镍、铝、铜、银、镁、钼、锰、锌、钛、钴、钒、铬、钢、锡、金中的一种或多种混合形成的合金材料镀层,以增加制品可焊性,耐焊性和附着力。
第十三步骤:检测包装:将制品进行检测以剔除尺寸、外观及特性不良品,然后进行包装。
按上述工艺制成的产品实测数据参照附图4,按上述工艺制成的产品示意图参照附图5,与市面标杆企业产品进行特性对比(附图3),综合对比本申请的产品的负载电流、工作电流、能量损耗均明显优于同行标杆企业产品。
按上述工艺制成的产品各项测试数据见附图9至附图18。
实施例2:本实施例制备的是“L型”电极
金属粉芯集成芯片电感的制备方法包括以下步骤:绕制空心线圈、模压成型、生胚倒角、热压固化、熟胚倒角、绝缘包覆、研磨、电镀、检测包装;
其中,
第一步骤:绕制空心线圈:根据制品规格设定要求制作空心线圈;其绕制方式采用在绕线治具上多轴绕制,必须达到相应的技术标准。漆包铜线的选取及绕制经过反复试验,取得了可以批量生产的绕线设备参数及线材的规格数据。绕线方式采用在绕线治具上多轴绕制,在节省料片的同时提升绕线速度。
第二步骤:模压成型:采用羰基铁粉或合金材料(铁硅,铁硅铬,铁镍,铁硅铝及非晶纳米晶等材料体系)成型、研发团队经过多次的试验,记录数据,统计分析后筛选出最佳的羰基粉末成份配方如下:
将羰羰基铁粉/合金材料/铁氧体材料:环氧树脂:丙酮按照重量比例100:≤7:≤20混合均匀,然后在温度为≤80℃条件下保温1-3小时,然后进行研磨造粒,制备的粉末需要满足球形度≥60%,且粉末粒径满足:D50≤30μm,D90≤90μm,D10≤20μm;(D10是颗粒累积分布为10%的粒径,即小于此粒径的颗粒体积含量占全部颗粒的10%,D50是颗粒累积分布为50%的粒径。也叫中位径或中值粒径,这是一个表示粒度大小的典型值。D90是颗粒累积分布为90%的粒径。即小于此粒径的颗粒体积含量占全部颗粒的90%。)环氧树脂作为粘结剂,粉末造粒完成后添加硬脂酸锌、硬脂酸钡或其他脱模润滑剂;
将含空心线圈的绕线治具放入成型机的模具中,再将线圈定点植入模腔,在模腔中注满金属粉末冲压成型制品,成型的密度为不小于3g/cm
3。
成型机具体压力的选取:压力大了会把线圈的漆皮刮伤或压伤,压力不够,生产出来的制品密度不足,会导致制品缺角、电感值低等不良,经过大量的试验,统计数据筛选出既能满足制品质量,生产效率及良品率最好的参数。
第三步骤:生胚倒角:将模压成型制品按制品重量添加不小于千分之一的倒角介质后放入倒角设备完成倒角作业,倒角时间不低于5分钟,所述的倒角介质为氧化铝、氧化锆、碳化硅等高密度高硬度粉末中的一种或多种。
第四步骤:热压固化:将制品整齐排版放入热压设备型腔内,热压设备型腔的温度控制不小于100℃,使用不小于0.5MPa的压力进行不低于5分钟的保压完成热压固化作业。
第五步骤:熟胚倒角:将热压后的制品按制品重量添加大于制品重量的倒角介质后放入倒角设备完成熟胚倒角作业,倒角时间不低于5分钟,所述的倒角介质为专用倒角石(如颗粒状氧化锆、颗粒状氧化铝等高密度高硬度颗粒物中的一种或多种)。
第六步骤:绝缘包覆:使用聚酰亚胺系材料对制品表面进行绝缘包覆处理,绝缘层厚度为不低于3um,制品包覆后在100℃以上烘烤0.5小时以上固化绝缘层。
第七步骤:研磨:将制品整齐排列到治具内,使用高精密磨床对制品进行研磨作业,制品单边研磨不小于3um,研磨后露出制品端部漆包铜线截面。
第八步骤:第一次电镀:将研磨后制品采用传统工艺电镀镍底,镀层厚度不小于0.3um,增加电极附着力。
第九步骤:第二次电镀:在镀镍底的基础上采用传统工艺电镀铜层,镀层厚度不小于1.0um,增加导电性能。
上述第八步骤的电极镀镍可以采用电极镀铜,再将第九步骤的电极镀铜改为电极镀镍;也可以根据需要采用市面其它常规金属进行电镀。
第十步骤:第三次电镀:将镀铜后的制品采用传统工艺电镀锡层,镀层厚度不小于1.0um,增加抗氧化及可焊性能。
第十一步骤:检测包装:将制品进行检测以剔除尺寸、外观及特性不良品,然后进行包装。
本实施例的电镀工艺也可根据需要采用真空镀膜工艺(PVD技术)、传统电镀工艺中的一种或两种工艺结合。
按上述工艺制成的产品示意图参照附图6。
以上所述之实施例只为本发明之较佳实施例,并非以此限制本发明的实施范围,故凡依本发明之形状、原理所作的变化,均应涵盖在本发明的保护范围内。
Claims (9)
- 金属粉芯集成芯片电感的制备方法,其特征在于:它包括有以下步骤:绕制线圈、模压成型、倒角、固化、绝缘包覆、研磨、电镀。
- 根据权利要求1所述的金属粉芯集成芯片电感的制备方法,其特征在于:所述的步骤包括有:绕制空心线圈、模压成型、生胚倒角、热压固化、熟胚倒角、绝缘包覆、研磨、电极镀镍、电极镀铜、二次绝缘包覆、二次研磨、电镀金属化电极、检测包装。
- 根据权利要求1所述的金属粉芯集成芯片电感的制备方法,其特征在于:所述线圈的绕制是在绕线治具上多轴绕制形成空心线圈。
- 根据权利要求1所述的金属粉芯集成芯片电感的制备方法,其特征在于:所述模压成型是通过将含线圈的绕线治具放入成型机的模具中,再将线圈定点植入模腔,在模腔中注满金属粉末冲压成型制品。
- 根据权利要求1所述的金属粉芯集成芯片电感的制备方法,其特征在于:所述的倒角是将模压成型制品,按制品重量与倒角介质以一定比例混合后放入倒角设备完成倒角作业。
- 根据权利要求1所述的金属粉芯集成芯片电感的制备方法,其特征在于:所述固化是将制品整齐排版放入固化设备型腔内固化成型。
- 根据权利要求1所述的金属粉芯集成芯片电感的制备方法,其特征在于:所述的绝缘包覆是对制品表面进行绝缘包覆处理。
- 根据权利要求1所述的金属粉芯集成芯片电感的制备方法,其特征在于:所述的研磨是将制品整齐排列到治具内,使用磨床对制品进行研磨作业,研磨后露出制品端部漆包铜线截面。
- 根据权利要求1所述的金属粉芯集成芯片电感的制备方法,其特征在于:所述的电镀包括有电镀镍、电镀铝、电镀铜、电镀银、电镀镁、电镀钼、电镀锰、电镀锌、电镀钛、电镀钴、电镀钒、电镀铬、电镀钢、电镀锡、电镀金中的一种或多种。
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