WO2020255975A1 - 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 - Google Patents

半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 Download PDF

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Publication number
WO2020255975A1
WO2020255975A1 PCT/JP2020/023647 JP2020023647W WO2020255975A1 WO 2020255975 A1 WO2020255975 A1 WO 2020255975A1 JP 2020023647 W JP2020023647 W JP 2020023647W WO 2020255975 A1 WO2020255975 A1 WO 2020255975A1
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WIPO (PCT)
Prior art keywords
protective film
temporary protective
adhesive layer
lead frame
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/023647
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English (en)
French (fr)
Japanese (ja)
Inventor
友宏 名児耶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Showa Denko Materials Co Ltd
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Filing date
Publication date
Application filed by Showa Denko Materials Co Ltd filed Critical Showa Denko Materials Co Ltd
Priority to PH1/2021/552880A priority Critical patent/PH12021552880A1/en
Priority to JP2021528275A priority patent/JP7803713B2/ja
Priority to CN202080036328.2A priority patent/CN113874989A/zh
Priority to KR1020217036713A priority patent/KR102833268B1/ko
Priority to US17/613,933 priority patent/US12451367B2/en
Publication of WO2020255975A1 publication Critical patent/WO2020255975A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/14—Polyamide-imides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D65/00—Wrappers or flexible covers; Packaging materials of special type or form
    • B65D65/38—Packaging materials of special type or form
    • B65D65/40—Applications of laminates for particular packaging purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
    • B65H18/00—Winding webs
    • B65H18/28—Wound package of webs
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7436—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/047—Attaching leadframes to insulating supports, e.g. for tape automated bonding [TAB]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/442—Shapes or dispositions of multiple leadframes in a single chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/105—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
    • C—CHEMISTRY; METALLURGY
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • C09J2479/086—Presence of polyamine or polyimide polyimide in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07502—Connecting or disconnecting of bond wires using an auxiliary member
    • H10W72/07504—Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/50—Bond wires
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    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
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    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • H10W74/00—Encapsulations, e.g. protective coatings
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present invention relates to a temporary protective film for semiconductor encapsulation molding, a lead frame with a temporary protective film, an encapsulation molded body with a temporary protective film, and a method for manufacturing a semiconductor device.
  • a semiconductor package has a structure in which a semiconductor element is bonded to a die pad with an adhesive such as silver paste, the semiconductor element is joined to a lead frame with a wire, and the entire is sealed leaving an outer lead for external connection.
  • an adhesive such as silver paste
  • the semiconductor element is joined to a lead frame with a wire
  • the entire is sealed leaving an outer lead for external connection.
  • semiconductor packages having various structures have been proposed. Examples thereof include LOC (leadonchip) and COL (chiponlead) structures, but these also have limitations in terms of area reduction and thinning.
  • Patent Document 1 and 2 a package having a structure in which only one side (semiconductor element side) of the package is sealed and the exposed lead frame on the back side is used for external connection has been developed (Patent Document 1 and). 2). Since the lead frame of the package having this structure does not protrude from the sealing resin, the area can be reduced and the thickness can be reduced.
  • a manufacturing method including the following steps.
  • a temporary protective film is attached to the back surface of the lead frame as an adhesive film for semiconductors to protect the back surface of the lead frame, and the film is mounted on the surface opposite to the back surface of the lead frame.
  • the temporary protective film used in the manufacture of semiconductor devices needs to withstand the heat of the semiconductor assembly process, so a polyimide film is often used as the base material (support film).
  • a resin film such as a polyimide film
  • a transfer problem may occur in the manufacturing process due to poor slippage during transfer by the apparatus.
  • one aspect of the present invention is to provide a temporary protective film for semiconductor encapsulation molding that can suppress a transfer failure on a stage in a manufacturing process of a semiconductor device.
  • the temporary protective film includes a support film, an adhesive layer provided on one surface of the support film, and a non-adhesive layer provided on a surface opposite to the surface on which the adhesive layer of the support film is provided. , Equipped with.
  • the thickness of the non-adhesive layer is 10 ⁇ m or less.
  • the surface roughness of the surface of the non-adhesive layer opposite to the surface in contact with the support film is 0.1 ⁇ m or more.
  • the surface roughness Ra is a value measured by a laser microscope under the condition that the magnification of the objective lens is 50 times.
  • the surface roughness Ra can be a value calculated in accordance with the JIS B0601: 2001 standard.
  • the 90 degree peel strength between the adhesive layer and the lead frame is 5 N / at 25 ° C. It may be m or more.
  • the temporary protective film is attached to the lead frame having the die pad and the inner lead so that the adhesive layer is in contact with the lead frame, and the semiconductor element is mounted on the surface of the die pad opposite to the temporary protective film and is in contact with the adhesive layer.
  • the 90-degree peel strength between the adhesive layer and the lead frame and the sealing layer is at least a part of the temperature range of 0 to 250 ° C., 80 to 250. At least a part of the temperature range of ° C., or the temperature at which the temporary protective film is peeled from the lead frame and the sealing layer, may be 1000 N / m or less.
  • the glass transition temperature of the adhesive layer may be 100 to 300 ° C.
  • the elastic modulus of the adhesive layer at 230 ° C. may be 1 MPa or more.
  • the 5% weight loss temperature of the adhesive layer may be 300 ° C. or higher.
  • the adhesive layer is made of a thermoplastic resin having at least one functional group selected from the group consisting of an amide group, an ester group, an imide group, an ether group and a sulfone group, or an amide group, an ester group, an imide group and an ether group. It may contain a thermoplastic resin having at least one functional group selected from the above group.
  • the support film is made from aromatic polyimide, aromatic polyamide, aromatic polyamideimide, aromatic polysulfone, aromatic polyethersulfone, polyphenylene sulfide, aromatic polyetherketone, polyarylate, aromatic polyetheretherketone and polyethylene naphthalate. It may be a film containing a polymer selected from the group.
  • the ratio of the thickness of the adhesive layer to the thickness of the support film may be 0.5 or less.
  • the elastic modulus of the non-adhesive layer at 230 ° C. may be 10 MPa or more.
  • Another aspect of the present invention relates to a reel body including a winding core and the temporary protective film wound around the winding core.
  • Another aspect of the present invention includes a lead frame having a die pad and an inner lead, and the temporary protective film, and the temporary protective film is attached to the lead frame so that the adhesive layer is in contact with one side of the lead frame. Regarding the attached lead frame with temporary protective film.
  • One aspect of the present invention is a lead frame having a die pad and an inner lead, a semiconductor element mounted on the die pad, a wire connecting the semiconductor element and the inner lead, and a sealing that seals the semiconductor element and the wire.
  • a temporary protective film which comprises a layer and the temporary protective film, wherein the temporary protective film is attached to a surface opposite to the surface on which the semiconductor element of the lead frame is mounted.
  • a sealed molded body Regarding a sealed molded body.
  • One aspect of the present invention is a step of attaching the temporary protective film to one side of a lead frame having a die pad and an inner lead so that the adhesive layer is in contact with the lead frame, and a side opposite to the temporary protective film of the die pad.
  • a step of mounting the semiconductor element on the surface of the surface, a step of providing a wire for connecting the semiconductor element and the inner lead, and a sealing layer for sealing the semiconductor element and the wire are formed to form a lead frame, a semiconductor element, and a seal.
  • the present invention relates to a method for manufacturing a semiconductor device, comprising a step of obtaining a sealed molded body having a stop layer and a step of peeling a temporary protective film from the sealed molded body in this order.
  • the method of manufacturing a semiconductor device may further include a step of connecting the semiconductor element mounted on the die pad and the inner lead with a conductive material by reflow.
  • a temporary protective film for semiconductor encapsulation molding capable of suppressing a transfer failure on a stage in a manufacturing process of a semiconductor device.
  • the temporary protective film for semiconductor encapsulation molding of the present invention According to the temporary protective film for semiconductor encapsulation molding of the present invention, the possibility of jamming can be suppressed by suppressing the transfer failure. Therefore, if the temporary protective film for semiconductor encapsulation molding of the present invention is used, the productivity of the semiconductor device can be improved. Further, the temporary protective film for sealing molding of the present invention also has various characteristics required for semiconductor applications, such as curling and warpage of the lead frame being suppressed.
  • FIG. 1 is a cross-sectional view showing a temporary protective film according to an embodiment.
  • the temporary protective film 10 of FIG. 1 is provided on the support film 1, the adhesive layer 2 provided on one main surface of the support film 1, and on the other main surface of the support film 1 while being in contact with the support film 1. It has a non-adhesive layer 3 (a resin layer having substantially no adhesiveness).
  • These temporary protective films are used on the back surface of the lead frame (the surface opposite to the surface on which the semiconductor element is mounted) in the sealing molding step of forming the sealing layer for sealing the semiconductor element mounted on the lead frame. ),
  • the lead frame can be used as a temporary protective film for semiconductor sealing molding for temporary protection during sealing molding.
  • the 90-degree peel strength between the adhesive layer and the lead frame when the temporary protective film is attached to the lead frame having the die pad and the inner lead so that the adhesive layer is in contact with the lead frame is At 25 ° C., it may be 5 N / m or more, 10 N / m or more, 50 N / m or more, 100 N / m or more, or 150 N / m or more.
  • the peel strength after sticking is 5 N / m or more at 25 ° C
  • the temporary protective film is hard to peel off from the lead frame, and the sealing resin gets into between the lead frame and the adhesive layer during sealing molding. The problem tends to be suppressed.
  • the peel strength after application may be 2000 N / m or less, 1500 N / m or less, or 1000 N / m or less at 25 ° C.
  • the peel strength after sticking is measured by peeling the temporary protective film in the 90 degree direction with respect to the lead frame according to, for example, the 90 degree peeling method of JIS Z 0237.
  • the 90-degree peel strength when the temporary protective film is peeled off at a speed of 270 to 330 mm / min or 300 mm / min at 25 ° C. is a 90-degree peeling tester (manufactured by Tester Sangyo Co., Ltd.). Is measured using.
  • the peel strength after application depends on the glass transition temperature (Tg) of the adhesive layer, the adhesive temperature, the material of the adherend, the wettability of the adhesive layer, and the like. Therefore, the conditions should be appropriately selected in consideration of the glass transition temperature (Tg) of the adhesive layer, the adhesive temperature, the material of the lead frame, the wettability of the adhesive layer, etc. so that the peel strength after application is 5 N / m or more. Can be done. Among these, the glass transition temperature (Tg) and the attachment (adhesion) temperature of the adhesive layer have a large influence on the peel strength. Usually, an adhesive temperature that is about 0 to 30 ° C. higher than the glass transition temperature (Tg) of the adhesive layer is adopted. Appropriate conditions may be determined in consideration of the material of the lead frame, the wettability of the adhesive layer, and the like.
  • the conditions for adhering the temporary protective film and the lead frame in order to measure the peel strength after application may be used.
  • the lead frame a copper lead frame, a copper lead frame coated with palladium, or a 42 alloy lead frame is used, (1) temperature 230 ° C., pressure 6 MPa, time 10 seconds, (2) temperature 350 ° C., pressure 3 MPa, It can be attached under any of the bonding conditions of (3) temperature 250 ° C., pressure 8 MPa, and time 10 seconds.
  • the 90-degree peel strength between the adhesive layer and the lead frame immediately before the sealing step may be 5 N / m or more, 10 N / m or more, or 50 N / m or more at 25 ° C.
  • the 90-degree peel strength immediately before the sealing step is 5 N / m or more at 25 ° C., problems such as the sealing resin getting into the lead frame and the adhesive layer during the sealing step are suppressed. Tend.
  • immediately before the sealing step is performed before the sealing step and when all the steps performed before the sealing step are completed.
  • a heating step of heating the lead frame with the temporary protective film may be performed before performing the sealing step.
  • the heating temperature in the heating step is not particularly limited, but may be 100 ° C. or higher in order to improve the adhesive strength between the adhesive layer and the lead frame.
  • the heating temperature may be 400 ° C. or lower from the viewpoint of heat resistance of the lead frame and the temporary protective film.
  • the heating temperature may be 130 ° C. or higher and 350 ° C. or lower.
  • the heating time is not particularly limited, but may be 10 seconds or more in order to sufficiently improve the adhesive strength between the adhesive layer and the lead frame.
  • the heating time may be 1 minute or more and 2 hours or less.
  • various steps before moving the above heating step to the sealing step (for example, curing step of adhesive such as silver paste (bonding step of semiconductor element), reflow connection step, wire bond step, etc.) It may be done by heating in.
  • curing step of adhesive such as silver paste (bonding step of semiconductor element), reflow connection step, wire bond step, etc.
  • heating is usually performed at 140 to 200 ° C. for 30 minutes to 2 hours in order to cure the adhesive used for bonding. Therefore, the above heating step can be performed by heating in these various steps.
  • the temporary protective film is attached to the lead frame so that the adhesive layer is in contact with the lead frame, the semiconductor element is mounted on the surface of the die pad opposite to the temporary protective film, and the semiconductor element is sealed while being in contact with the adhesive layer.
  • the 90-degree peel strength between the adhesive layer and the lead frame and the sealing layer (hereinafter, also referred to as “post-sealing peel strength”) is in the temperature range of 0 to 250 ° C. At least a part of the above may be 1000 N / m or less, 800 N / m or less, or 500 N / m or less.
  • the peel strength after sealing When the peel strength after sealing is 1000 N / m or less, the problem of breakage tends to be suppressed when stress is applied to the lead frame and the sealing layer.
  • the peel strength after sealing usually decreases as the measured temperature increases.
  • the peel strength after sealing may be 0 N / m or more, 3 N / m or more, or 5 N / m or more in at least a part of the temperature range of 0 to 250 ° C.
  • the peel strength after sealing may be in the above-mentioned range in at least a part of the temperature range of 80 to 250 ° C., and is in the above-mentioned range in the temperature at which the temporary protective film is peeled from the lead frame and the sealing layer. You can.
  • the peel strength after sealing is 90 degrees in accordance with the 90 degree peeling method of JIS Z 0237, with a temporary protective film against the lead frame and sealing layer at room temperature or on a stage at 0 to 250 ° C. Peel off and measure.
  • the 90 degree peel strength when peeling the temporary protective film at a speed of 270 to 330 mm / min or 300 mm / min is a 90 degree peeling tester. Measured using (manufactured by Testa Sangyo Co., Ltd.).
  • the measurement temperature range of this peel strength may be 80 to 240 ° C. or 140 to 230 ° C.
  • the temperature at which the temporary protective film is peeled off from the lead frame and the sealing layer may usually be between 0 and 250 ° C.
  • the sealing conditions with the sealing material for measuring the peel strength after sealing in at least a part of the temperature range of 0 to 250 ° C. are not particularly limited, but the sealing layer in the method for manufacturing a semiconductor device described later is used. It may be a condition to be formed.
  • CEL-9200 trade name, biphenyl sealing material manufactured by Hitachi Chemical Co., Ltd.
  • the sealing layer is formed under the conditions of a temperature of 180 ° C., a pressure of 10 MPa, and a time of 3 minutes. It may include forming and curing the encapsulant forming the encapsulating layer by heating at 180 ° C. for 5 hours.
  • the adhesive layer may contain a resin.
  • the resin used to form the adhesive layer (hereinafter, also referred to as "resin (a)") is an amide group (-NHCO-), an ester group (-CO-O-), an imide group (-NR 2 , but R). each is -CO-), ether group (-O-) or a sulfone group (-SO 2 - may be a thermoplastic resin having a).
  • the resin (a) may be a thermoplastic resin having an amide group, an ester group, an imide group or an ether group.
  • the resin (a) include aromatic polyamide, aromatic polyester, aromatic polyimide, aromatic polyamideimide, aromatic polyether, aromatic polyetheramideimide, aromatic polyetheramide, aromatic polyesterimide and the like.
  • Aromatic polyetherimides can be mentioned.
  • the resin (a) may be at least one selected from the group consisting of aromatic polyetherimide imide, aromatic polyetherimide and aromatic polyetheramide.
  • the resin (a) is obtained by polycondensing, for example, an aromatic diamine or bisphenol which is a basic component with a dicarboxylic acid, a tricarboxylic acid, a tetracarboxylic acid or an aromatic chloride which is an acid component, or a reactive derivative thereof.
  • an aromatic diamine or bisphenol which is a basic component with a dicarboxylic acid, a tricarboxylic acid, a tetracarboxylic acid or an aromatic chloride which is an acid component, or a reactive derivative thereof.
  • a usual method is used for the polycondensation reaction of an aromatic dicarboxylic acid, an aromatic tricarboxylic acid or a reactive derivative thereof with a diamine.
  • Aromatic polyetherimide, aromatic polyetheramide imide and aromatic polyetheramide may contain a structural unit derived from a base component used for synthesizing these polymers.
  • base component used for synthesizing these polymers.
  • basic components include 2,2-bis [4- (4-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] sulfone, 4,4'-diaminodiphenyl ether, and bis [4.
  • Aromatic amines with ether groups such as-(4-aminophenoxy) phenyl] ether, 2,2-bis [4- (4-aminophenoxy)] hexafluoropropane; 4,4'-methylenebis (2,6-methylenebis) Aromatic diamines having no ether group such as diisopropylamine); siloxane diamines such as 1,3-bis (3-aminopropyl) -tetramethyldisiloxane; and 1,12-diaminododecane, 1,6-diaminohexane and the like. ⁇ , ⁇ -diaminoalkane can be mentioned.
  • the proportion of aromatic diamines having an ether group is 40 to 100 mol% or 50 to 97 mol%, and aromatic diamines, siloxane diamines and ⁇ , ⁇ - without ether groups are used.
  • the proportion of at least one selected from the diaminoalkanes may be in an amount of 0-60 mol%, or 3-50 mol%.
  • combinations of base components include (1) 60 to 89 mol% or 68 to 82 mol% of aromatic diamine having an ether group, 1 to 10 mol% of siloxane diamine, or 3 to 7 mol%, and ⁇ .
  • Aromatic polyetherimide, aromatic polyetheramide imide and aromatic polyetheramide may contain a structural unit derived from an acid component used for the synthesis of these polymers.
  • the acid component include (A) reactive derivatives of trimellitic anhydride such as trimellitic anhydride, trimellitic anhydride chloride, mononuclear aromatic tricarboxylic acid anhydride or mononuclear such as pyromellitic dianhydride.
  • Aromatic tetracarboxylic dianhydride (B) Bisphenol A bistrimericate dianhydride, Polynuclear aromatic tetracarboxylic dianhydride such as oxydiphthalic anhydride, (C) terephthalic acid, isophthalic acid, terephthalic acid chloride, Examples include aromatic dicarboxylic acids such as reactive derivatives of phthalic acid such as isophthalic anhydride.
  • aromatic polyetheramide for example, 0.95 to 1.05 mol or 0.98 to 1.02 mol of the acid component (A) is reacted per 1 mol of the above-mentioned base component (1) or (2). It may be obtained by The aromatic polyetherimide is obtained by reacting, for example, 0.95 to 1.05 mol or 0.98 to 1.02 mol of the acid component (B) per 1 mol of the above-mentioned base component (3). It may be.
  • the adhesive layer may contain a filler such as ceramic powder, glass powder, silver powder, copper powder, resin particles, rubber particles, a coupling agent, and the like.
  • a filler such as ceramic powder, glass powder, silver powder, copper powder, resin particles, rubber particles, a coupling agent, and the like.
  • the content of the filler may be 1 to 30 parts by weight or 5 to 15 parts by weight with respect to 100 parts by weight of the resin (a).
  • the coupling agent may be, for example, vinylsilane, epoxysilane, mercaptosilane, titanate, aluminum chelate, zircoaluminate or a combination thereof.
  • the coupling agent may be a silane coupling agent.
  • silane coupling agents include vinyltrimethoxysilane, vinyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyl.
  • the silane coupling agent may be an epoxy silane coupling agent having an epoxy group.
  • the adhesive layer contains a silane coupling agent, the adhesion of the adhesive layer to the support film can be improved, so that when the temporary protective film is peeled off, it is peeled off at the interface between the adhesive layer and the support film. Is less likely to occur.
  • the content of the coupling agent may be 1 to 15 parts by weight or 2 to 10 parts by weight with respect to 100 parts by weight of the resin (a).
  • the glass transition temperature of the adhesive layer may be 100 to 300 ° C, 130 to 280 ° C, or 150 to 250 ° C.
  • the glass transition temperature is 100 ° C. or higher, when the temporary protective film is peeled off from the lead frame and the sealing material, peeling does not easily occur at the interface between the adhesive layer and the support film, and the adhesive layer tends to be less likely to coagulate and break. .. Further, in the wire bonding step, the adhesive layer does not soften too much, the dispersion of the force at the time of wire connection is suppressed, and the wire connection failure tends to be less likely to occur.
  • the glass transition temperature is 300 ° C.
  • the adhesive layer is sufficiently softened during bonding, so that a decrease in 90-degree peel strength between the adhesive layer and the lead frame at 25 ° C. tends to be suppressed. Therefore, leakage of the sealing material is unlikely to occur during peeling and sealing in the transport process.
  • the 5% weight loss temperature of the adhesive layer may be 300 ° C. or higher, 350 ° C. or higher, or 400 ° C. or higher.
  • the 5% weight loss temperature of the adhesive layer can be determined by measuring with a differential thermal balance (manufactured by Seiko Instruments Inc., TG / DTA220) at a heating rate of 10 ° C./min.
  • the elastic modulus of the adhesive layer at 230 ° C. may be 1 MPa or more, or 3 MPa or more.
  • the wire bond temperature is not particularly limited, but is generally about 180 to 260 ° C., and is often around 230 ° C. Therefore, when the elastic modulus at 230 ° C. is 1 MPa or more, the adhesive layer is not excessively softened by the heat in the wire bonding process, and there is a tendency that wire bonding failure does not easily occur.
  • the upper limit of the elastic modulus of the adhesive layer at 230 ° C. is not particularly limited, but may be 2000 MPa or less, 1500 MPa or less, or 1000 MPa or less.
  • a dynamic viscoelasticity measuring device (Rheogel-E4000, manufactured by UBM Co., Ltd.) at a distance between chucks of 20 mm, and has a sine wave, a temperature rise rate of 5 ° C./min, and a frequency of 10 Hz. Measured by the tensile mode of.
  • the thickness (A) of the adhesive layer may be 1 to 20 ⁇ m, 3 to 15 ⁇ m, or 4 to 10 ⁇ m.
  • the thickness (A) of the adhesive layer is 1 ⁇ m or more, the adhesiveness is excellent and the sealing material tends to be less likely to leak during sealing.
  • the thickness (A) of the adhesive layer is 20 ⁇ m or less, it tends to be more economical.
  • the support film is not particularly limited, but may be a film containing a resin (heat resistant resin) that can withstand heat during the coating, drying, and semiconductor device assembly processes of the resin used for forming the adhesive layer or the non-adhesive layer.
  • Supporting films include, for example, aromatic polyimides, aromatic polyamides, aromatic polyamideimides, aromatic polysulfones, aromatic polyethersulfones, polyphenylene sulfides, aromatic polyetherketones, polyarylates, aromatic polyetheretherketones and polyethylenena. It may be a film of at least one polymer selected from the group consisting of phthalate, that is, a film containing the polymer.
  • the glass transition temperature of the support film may be 200 ° C. or higher, or 250 ° C. or higher in order to improve heat resistance.
  • the support film can be used in heat-applied steps such as a step of adhering a semiconductor element to a die pad, a wire bonding step, a sealing step, and a step of peeling a temporary protective film from a sealed molded body. Work can be done efficiently without softening.
  • the coefficient of linear expansion of the support film at 20 to 200 ° C. is 3.0 ⁇ 10-5 / ° C. or less, 2.5 ⁇ 10 -5 / ° C. or less, or 2.0 ⁇ 10 -5 / °C may be less.
  • the coefficient of linear expansion of the support film at 20 to 200 ° C. is performed according to JIS K 7197.
  • the measurement uses a thermomechanical analyzer (TMA). The distance between the chucks is set to 20 mm, and the coefficient of thermal expansion at 20 to 200 ° C. is calculated.
  • the heat shrinkage rate when the support film is heated at 200 ° C. for 2 hours is 0.15% or less and 0.13% or less. , Or 0.10% or less.
  • the heat shrinkage rate can be measured according to JIS K 7133.
  • a universal measuring microscope MF-U manufactured by Mitutoyo Co., Ltd. is used for measuring the heat shrinkage rate.
  • the heat shrinkage rate can be determined by measuring the difference in dimensions of the support film before and after the heat treatment in the MD direction (longitudinal direction) or the TD direction (direction perpendicular to the MD direction).
  • the heat treatment conditions are a temperature of 200 ° C. and a time of 2 hours.
  • the heat shrinkage rate is a measured value in the larger of the MD direction and the TD direction.
  • the support film may have sufficiently high adhesion to the adhesive layer. If the adhesiveness is high, when the temporary protective film is peeled off from the lead frame and the sealing material at a temperature of 100 to 300 ° C., peeling does not easily occur at the interface between the adhesive layer and the supporting film, and the lead frame and the sealing material are not easily peeled off. Resin does not easily remain on the surface.
  • the support film may be a polyimide film from the viewpoint of heat resistance and adhesion to the adhesive layer.
  • the support film may be surface-treated in order to sufficiently enhance the adhesion to the adhesive layer.
  • the surface treatment method of the support film is not particularly limited, and examples thereof include chemical treatment such as alkali treatment and silane coupling treatment, physical treatment such as sand mat treatment, plasma treatment, and corona treatment.
  • the thickness of the support film is not particularly limited, but may be 5 to 100 ⁇ m or 5 to 50 ⁇ m or less. When the thickness of the support film is 5 ⁇ m or more, the temporary protective film is less likely to wrinkle, so that workability tends to be high. When the thickness of the support film is 100 ⁇ m or less, the warp of the lead frame after the temporary protective film is attached to the lead frame tends to be suppressed.
  • the material of the support film may be a metal selected from the group consisting of copper, aluminum, stainless steel and nickel.
  • the support film contains these metals, the linear expansion coefficients of the lead frame and the support film are close to each other, so that the warp of the lead frame after the temporary protective film is attached to the lead frame can be reduced.
  • the ratio T 2 / T 1 of the thickness T 2 of the adhesive layer to the thickness T 1 of the support film may be 0.5 or less, 0.3 or less, or 0.2 or less.
  • T 2 / T 1 is 0.5 or less, curling of the film due to the volume reduction of the adhesive layer at the time of removing the solvent after coating is suppressed, and the workability when attaching to the lead frame tends to be high.
  • the non-adhesive layer is a resin layer that does not substantially have adhesiveness (or pressure-sensitive adhesiveness) to the lead frame at 0 to 270 ° C.
  • the volume of the adhesive layer is reduced when the solvent is removed, or the curl of the temporary protective film is caused by the volume reduction of the adhesive layer due to imidization and shrinkage during curing of the thermosetting resin. Can be offset.
  • the non-adhesive layer may be a resin layer that does not easily soften at a high temperature.
  • a resin layer having a high glass transition temperature can function as a non-adhesive layer.
  • the non-adhesive layer may contain a resin.
  • the composition of the resin used for forming the non-adhesive layer (hereinafter, also referred to as “resin (b)”) is not particularly limited, and may be either a thermoplastic resin or a thermosetting resin.
  • the thermoplastic resin is not particularly limited, but may be a thermoplastic resin having at least one functional group selected from the group consisting of an amide group, an ester group, an imide group, an ether group and a sulfone group.
  • the thermosetting resin is not particularly limited, and may be, for example, an epoxy resin, a phenol resin, a bismaleimide resin (for example, a bismaleimide resin having bis (4-maleimidephenyl) methane as a monomer) or the like.
  • a thermoplastic resin and a thermosetting resin may be combined.
  • the amount of the thermosetting resin may be 5 to 100 parts by mass or 20 to 70 parts by mass with respect to 100 parts by mass of the thermoplastic resin.
  • the non-adhesive layer may contain a filler such as ceramic powder, glass powder, silver powder, copper powder, resin particles, rubber particles, a coupling agent, and the like.
  • a filler such as ceramic powder, glass powder, silver powder, copper powder, resin particles, rubber particles, a coupling agent, and the like.
  • the content of the filler may be 1 to 30 parts by mass with respect to 100 parts by mass of the resin (b), and may be 5 to 15 parts by mass.
  • the content of the coupling agent may be 1 to 20 parts by mass and 2 to 15 parts by mass with respect to 100 parts by mass of the resin (b).
  • the elastic modulus of the non-adhesive layer at 230 ° C. may be 10 MPa or more, 100 MPa or more, or 1000 MPa or more.
  • the elastic modulus of the non-adhesive layer at 230 ° C. may be 2000 MPa or less, or 1500 MPa or less.
  • the elastic modulus of the non-adhesive layer at 230 ° C. is set in a dynamic viscoelasticity measuring device (Rheogel-E4000, manufactured by UBM Co., Ltd.) at a distance between chucks of 20 mm, and has a sine wave, a temperature rise rate of 5 ° C./min, and a frequency. It can be measured in a 10 Hz tensile mode.
  • a dynamic viscoelasticity measuring device Heogel-E4000, manufactured by UBM Co., Ltd.
  • the adhesive strength of the non-adhesive layer to the mold and the jig is not particularly limited as long as it is low enough not to stick to the mold and / or the jig in the process, but between the non-adhesive layer and the mold and the jig at 25 ° C.
  • the 90 degree peel strength of is less than 5 N / m, or less than 1 N / m. This peel strength is measured, for example, after crimping a brass die at a temperature of 250 ° C. and a pressure of 8 MPa for 10 seconds.
  • the glass transition temperature of the non-adhesive layer is difficult to soften in the process of adhering the semiconductor element to the die pad, the wire bonding process, the sealing process, the process of peeling the temporary protective film from the encapsulating molded body, etc., and the mold and jig
  • the temperature may be 150 ° C. or higher, 200 ° C. or higher, or 250 ° C. or higher in order to prevent sticking to.
  • the glass transition temperature of the non-adhesive layer may be 350 ° C. or lower, or 300 ° C. or lower.
  • the thickness of the non-adhesive layer may be, for example, 10 ⁇ m or less, 9 ⁇ m or less, 8 ⁇ m or less, or 7 ⁇ m or less.
  • the thickness of the non-adhesive layer may be, for example, 1 ⁇ m or more, 2 ⁇ m or more, 3 ⁇ m or more, 4 ⁇ m or more, 5 ⁇ m or more, or 6 ⁇ m or more.
  • the thickness of the non-adhesive layer is not particularly limited, but may be, for example, 1 to 10 ⁇ m or 1 to 8 ⁇ m.
  • the surface roughness Ra of the surface of the non-adhesive layer opposite to the surface in contact with the support film may be 0.1 ⁇ m, 0.15 ⁇ m or more, or 0.2 ⁇ m or more.
  • the surface roughness Ra here is a value measured by a laser microscope under the condition of a magnification of 50 times that of the objective lens.
  • the surface roughness Ra is obtained, for example, by analyzing an image in which images of 11 vertical sections and 9 horizontal sections are connected.
  • the surface roughness Ra is 0.1 ⁇ m or more, it is excellent in sliding with the stage in the apparatus, less likely to cause jamming problems, and also excellent in sliding between lead frames to which a temporary protective film is attached. , It is hard to cause a problem that it sticks and cannot be peeled off.
  • the surface roughness Ra can be measured with a shape measurement laser microscope VK-X100 manufactured by KEYENCE CORPORATION, which is a laser microscope.
  • the surface roughness (Ra) of the surface of the non-adhesive layer opposite to the surface in contact with the support film may be, for example, 3 ⁇ m or less, 2 ⁇ m or less, or 1 ⁇ m or less.
  • the surface roughness Ra of the surface of the non-adhesive layer opposite to the surface in contact with the support film is 0.4 ⁇ m or more when measured by a laser microscope under the condition of 10 times the magnification of the objective lens. , 0.5 ⁇ m or more, or 0.6 ⁇ m or more, and may be 8 ⁇ m or less, or 6 ⁇ m or less.
  • the resin (a) used for forming the adhesive layer is used as a solvent such as N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, and dimethylformamide.
  • a solvent such as N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, and dimethylformamide.
  • the method for forming the temporary protective film is to prepare a precursor varnish in which a resin (a) precursor (for example, polyamic acid) that produces a resin (a) (for example, polyimide resin) by heat treatment or the like is dissolved in a solvent. It may include coating one side of the support film with the precursor varnish and forming an adhesive layer containing the resin (a) by heat-treating the coated precursor varnish. Also by this method, a temporary protective film having a two-layer structure can be obtained. When the resin (a) precursor is used, the solvent is removed by heat treatment after coating, and the resin (a) is produced from the precursor by, for example, imidization. An adhesive varnish may be used from the viewpoint of the surface condition of the coated surface and the like.
  • a resin (a) precursor for example, polyamic acid
  • a resin (a) for example, polyimide resin
  • the temperature of the heat treatment may differ depending on whether an adhesive varnish is used or a precursor varnish is used.
  • the temperature may be such that the solvent can be removed, and in the case of the precursor varnish, the treatment temperature may be higher than the glass transition temperature of the adhesive layer for imidization.
  • the varnish can be applied using a roll coat, a reverse roll coat, a gravure coat, a bar coat, or a comma coat.
  • These varnishes may be applied by passing a support film through an adhesive varnish or a precursor varnish.
  • the method for forming the non-adhesive layer is not particularly limited, but for example, the resin (b) is dissolved in a solvent such as N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, and dimethylformamide.
  • a solvent such as N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, and dimethylformamide.
  • the method of forming the non-adhesive layer is to prepare a precursor varnish by dissolving a resin (b) precursor (for example, polyamic acid) that produces a resin (b) (for example, a polyimide resin) by heating or the like in a solvent. It may include coating the precursor varnish on the support film and heating the coated precursor varnish. In this case, the solvent is removed by heat treatment after coating, and the resin (b) is produced from the precursor by, for example, imidization.
  • a resin varnish may be used from the viewpoint of the surface condition of the coating film and the like.
  • the temperature of the heat treatment may differ depending on whether a resin varnish is used or a precursor varnish is used.
  • the temperature may be such that the solvent can be removed, and when a precursor varnish is used, the treatment temperature may be higher than the glass transition temperature of the non-adhesive layer for imidization.
  • the varnish can be applied using a roll coat, a reverse roll coat, a gravure coat, a bar coat, a comma coat, or the like. These varnishes may be applied by passing a support film through a resin varnish or a precursor varnish.
  • a semiconductor device can be manufactured by a method including a sealing molding step of a semiconductor element using a temporary protective film according to an embodiment.
  • the semiconductor device includes, for example, a temporary protective film, a lead frame bonded to the adhesive layer of the temporary protective film, a semiconductor element bonded to a die pad of the lead frame, a wire connecting the semiconductor element and the inner lead of the lead frame, or It is manufactured by peeling the temporary protective film from a conductive material such as a metal plate and a semiconductor device with a temporary protective film provided with an exposed surface of a lead frame, a semiconductor element, and a sealing layer for sealing a wire.
  • the manufactured semiconductor device has, for example, a lead frame, a semiconductor element mounted on the lead frame, and a sealing layer for sealing the semiconductor element on the semiconductor element side of the lead frame, and the back surface of the lead frame is for external connection. It may be a Non Lead Type Package that is exposed to the surface. Specific examples thereof include QFN (QuadFlat Non-readed Package) and SON (Small Outline Non-readed Package).
  • FIGS. 2 and 3 are cross-sectional views showing a method of manufacturing a semiconductor device according to an embodiment.
  • FIG. 4 is a cross-sectional view showing an embodiment of a semiconductor device obtained by the manufacturing methods of FIGS. 2 and 3.
  • each process will be described with reference to each drawing as necessary.
  • the method for manufacturing a semiconductor device includes a step of attaching a temporary protective film 10 to one side (back surface) of a lead frame 11 having a die pad 11a and an inner lead 11b so that the adhesive layer is in contact with the lead frame, and a die pad.
  • the steps are provided in this order.
  • the temporary protective film 10 may be attached to the lead frame 11 under heating, or at room temperature (for example, 5 to 35 ° C.).
  • the method of pasting is not particularly limited, but may be, for example, a roll laminating method.
  • the lead frame with a temporary protective film according to one embodiment includes a lead frame 11 having a die pad 11a and an inner lead 11b, and a temporary protective film 10.
  • the temporary protective film 10 is attached to the lead frame 11 so that the adhesive layer 2 is in contact with one side of the lead frame 11.
  • the conditions for adhering the temporary protective film 10 to the lead frame 11 are not particularly limited, but the adhesive temperature may be 150 to 400 ° C, 180 to 350 ° C, or 200 to 300 ° C.
  • the bonding temperature is 150 ° C. or higher, the bonding strength between the lead frame 11 and the bonding layer 2 tends to be further improved.
  • the bonding temperature is 400 ° C. or lower, the deterioration of the lead frame 11 tends to be further suppressed.
  • the adhesive pressure of the temporary protective film 10 to the lead frame 11 may be 0.5 to 30 MPa, 1 to 20 MPa, or 3 to 15 MPa.
  • the adhesive pressure is 0.5 MPa or more, the adhesive strength between the adhesive layer 2 and the lead frame 11 tends to be further improved.
  • the adhesive pressure is 30 MPa or less, damage to the lead frame 11 tends to be more easily suppressed.
  • the adhesion time of the temporary protective film 10 to the lead frame 11 may be 0.1 to 60 seconds, 1 to 30 seconds, or 3 to 20 seconds.
  • the bonding time is 0.1 seconds or more, the bonding strength between the bonding layer 2 and the lead frame 11 tends to be further improved.
  • the bonding time is 60 seconds or less, workability and productivity tend to be improved more easily.
  • Preheating may be performed for about 5 to 60 seconds before applying pressure.
  • the material of the lead frame 11 is not particularly limited, but may be, for example, an iron-based alloy such as 42 alloy, copper, or a copper-based alloy. When copper and a copper-based alloy are used, the surface of the lead frame may be coated with palladium, gold, silver or the like.
  • the semiconductor element 14 is usually mounted (adhered) to the die pad 11a via an adhesive (for example, silver paste).
  • the adhesive may be cured by heat treatment (for example, 140 to 200 ° C., 30 minutes to 2 hours).
  • the semiconductor element and the inner lead may be connected by solder reflow using a conductive material such as a copper plate. That is, the method of manufacturing a semiconductor device may further include a step of connecting the semiconductor element mounted on the die pad and the inner lead with a conductive material by reflow.
  • the reflow connection may be performed, for example, in a temperature range of a maximum temperature of 250 to 420 ° C. and for 1 to 30 minutes.
  • the connection by reflow is performed, for example, before the step of obtaining the sealed molded body 20 and after the step of mounting (adhering) the semiconductor element 14.
  • the connection by reflow may be performed, for example, after the step of mounting (adhering) the semiconductor element 14 and before the step of providing the wire 12.
  • the wire 12 is not particularly limited, but may be, for example, a gold wire, a copper wire, a palladium-coated copper wire, or an aluminum wire.
  • the semiconductor element and the inner lead may be joined to the wire 12 by heating at 200 to 300 ° C. for 3 minutes to 3 hours.
  • the sealing layer 13 is formed using the sealing material.
  • a sealing molded body 20 having a plurality of semiconductor elements 14 and a sealing layer 13 for collectively sealing them can be obtained. Since the temporary protective film 10 is provided during the sealing molding, it is possible to prevent the sealing material from wrapping around to the back surface side of the lead frame 11.
  • the sealing molded body with a temporary protective film connects a lead frame 11 having a die pad 11a and an inner lead 11b, a semiconductor element 14 mounted on the die pad 11a, and the semiconductor element 14 and the inner lead 11b.
  • a wire 12, a sealing layer 13 that seals the semiconductor element 14 and the wire 12, and a temporary protective film 10 are provided.
  • the temporary protective film 10 is attached to the surface of the lead frame 11 whose adhesive layer 2 is opposite to the surface on which the semiconductor element 14 is mounted.
  • the temperature (sealing temperature) during the formation of the sealing layer 13 may be, for example, 150 to 200 ° C.
  • the pressure (sealing pressure) during the formation of the sealing layer may be 6 to 15 MPa or 7 to 10 MPa.
  • the heating time (sealing time) in the sealing molding may be 1 to 5 minutes or 2 to 3 minutes.
  • the formed sealing layer 13 may be heat-cured if necessary.
  • the heating temperature for curing the sealing layer 13 (sealing curing temperature) may be 150 to 200 ° C.
  • the heating time for curing the sealing layer 13 may be, for example, 4 to 6 hours.
  • the encapsulant is not particularly limited, but may be a curable resin composition containing an epoxy resin such as a cresol novolac epoxy resin, a phenol novolac epoxy resin, a biphenyl diepoxy resin, or a naphthol novolac epoxy resin.
  • the encapsulant may contain, for example, a flame-retardant substance such as a filler or a brom compound, or an additive such as a wax component.
  • the temporary protective film 10 is peeled off from the lead frame 11 and the sealing layer 13 of the obtained sealing molded body 20.
  • the temporary protective film 10 may be peeled off at any time before or after the curing of the sealing layer 13.
  • the temperature at which the temporary protective film 10 is peeled from the sealed molded product may be between 0 and 250 ° C.
  • peeling temperature When the peeling temperature is 0 ° C. or higher, the adhesive layer is less likely to remain on the lead frame 11 and the sealing layer 13.
  • the peeling temperature When the peeling temperature is 250 ° C. or lower, deterioration of the lead frame 11 and the sealing layer 13 tends to be more easily suppressed.
  • the peeling temperature may be 80-240 ° C or 140-230 ° C.
  • the method for manufacturing the semiconductor device may further include a step of removing the adhesive layer (adhesive residue) remaining on the lead frame 11 and the sealing layer 13 after the peeling step.
  • the adhesive layer 2 may not remain on the lead frame 11 and the sealing layer 13.
  • the adhesive layer remaining on the lead frame 11 and the sealing layer 13 may be removed by mechanical brushing, a solvent, or the like.
  • the solvent is not particularly limited, and may be, for example, N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methylethylketone, dimethylformamide, or a combination thereof.
  • the encapsulating molded body 20 may be divided to obtain a plurality of semiconductor devices 100 of FIG. 4 each having one semiconductor element, if necessary. it can.
  • the manufacturing method according to one embodiment is to enclose the temporary protective film 10 from the sealing molded body 20.
  • a step of dividing the sealing molded body 20 before or after peeling to obtain a semiconductor device 100 having one die pad 11a and a semiconductor element 14 may be further provided.
  • a semiconductor device may be manufactured by winding a long temporary protective film around a winding core and unwinding the temporary protective film from the obtained reel body.
  • the reel body in this case has a winding core and a temporary protective film wound around the winding core according to the above-described embodiment.
  • FIG. 6 is a perspective view showing an embodiment of the reel body.
  • the reel body 30 shown in FIG. 6 includes a winding core 31, a temporary protective film 10 wound around the winding core 31, and a side plate 32.
  • the width of the winding core 31 and the temporary protective film 10 may be, for example, 10 mm or more, 40 mm or more, 60 mm or more, or 80 mm or more, and may be 350 mm or less.
  • the width of the winding core 31 and the temporary protective film 10 (the length in the direction orthogonal to the winding direction) may be, for example, 10 mm or more and 350 mm or less, 40 mm or more and 350 mm or less, or 80 mm or more and 350 mm or less.
  • the temporary protective film according to the above-described embodiment may be provided as a packaging body in which the reel body is housed in a packaging bag.
  • FIG. 7 shows an embodiment of the package.
  • the packaging body 50 includes the reel body 30 and a packaging bag 40 containing the reel body 30.
  • the reel bodies 30 are usually individually housed in a packaging bag, but a plurality of (for example, 2 to 3) reel bodies 30 may be housed in one packaging bag 40.
  • the packaging bag 40 may be formed of a resin film, or may be formed of a composite film which is a resin film having an aluminum layer. Specific examples of the packaging bag 40 include an aluminum-coated plastic bag and the like. Examples of the material of the resin film include plastics such as polyethylene, polyester, vinyl chloride, and polyethylene terephthalate.
  • the reel body 30 may be housed in a packaging bag in a vacuum-packed state, for example.
  • the package 50 is not limited to the vacuum-packed one.
  • the packaging bag 40 may contain a desiccant together with the reel body 30.
  • the desiccant include silica gel.
  • the packaging body 50 may be a packaging bag 40 containing the reel body 30 further wrapped with a cushioning material.
  • the package 50 may be provided as a package housed in a package box.
  • FIG. 8 shows an embodiment of the package.
  • the package 70 includes the package 50 and a packaging box 60 containing the package 50.
  • the packing box 60 contains one or more packaging bodies 50.
  • the packing box 60 for example, corrugated cardboard can be used.
  • the semiconductor device manufactured by using the temporary protective film according to one embodiment is excellent in terms of high density, small area, thinning, and the like.
  • electronic devices such as mobile phones, smartphones, personal computers, and tablets. Can be suitably used for.
  • Varnish A-1 (varnish for forming adhesive layer) 270.9 g (0.) Propane 2,2-bis [-(4-aminophenoxy) phenyl] propane in a 5-liter four-necked flask equipped with a thermometer, agitator, nitrogen introduction pipe and fractional distillation tower under a nitrogen atmosphere. 66 mol), 8.7 g (0.035 mol) of 1,3-bis (3-aminopropyl) -tetramethyldisiloxane was added, and this was dissolved in 1950 g of N-methyl-2-pyrrolidone. The solution was cooled to 0 ° C.
  • trimellitic anhydride chloride 149.5 g (0.71 mol) of trimellitic anhydride chloride was added to the solution at this temperature.
  • 100 g of triethylamine was added to the solution.
  • the temperature was raised to 180 ° C. and the reaction for 5 hours completed imidization.
  • the reaction solution was put into methanol to precipitate a polymer.
  • the precipitated polymer was dried and then dissolved in N-methyl-2-pyrrolidone.
  • the solution was poured into methanol to precipitate the polymer again.
  • the precipitated polymer was dried under reduced pressure to obtain a purified powdery polyetheramideimide.
  • Varnish A-2 (Varnish for forming an adhesive layer) 258.6 g (0) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane in a 5-liter four-necked flask equipped with a thermometer, agitator, nitrogen introduction pipe and fractional distillation tower under a nitrogen atmosphere. .63 mol), 1,3-bis (3-aminopropyl) tetramethyldisiloxane 67.0 g (0.27 mol) was added, and this was dissolved in 1550 g of N-methyl-2-pyrrolidone.
  • the solution was cooled to 0 ° C., and 187.3 g (0.89 mol) of trimellitic anhydride chloride was added to the solution at this temperature.
  • trimellitic acid chloride was dissolved, 100 g of triethylamine was added to the solution.
  • the temperature was raised to 180 ° C. and the reaction for 5 hours completed imidization.
  • the reaction solution was put into methanol to precipitate a polymer.
  • the precipitated polymer was dried and then dissolved in N-methyl-2-pyrrolidone.
  • the solution was poured into methanol to precipitate the polymer again.
  • the precipitated polymer was dried under reduced pressure to obtain a purified powdery polyetheramideimide.
  • Varnish B-1 (varnish for forming a non-adhesive layer) 172.4 g (0) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane in a 5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen introduction tube and a fractionation tower under a nitrogen atmosphere. .42 mol), 153.7 g (0.42 mol) of 4,4′-methylenebis (2,6-diisopropylaniline) was added, and this was dissolved in 1550 g of N-methyl-2-pyrrolidone.
  • the solution was cooled to 0 ° C., and 174.7 g (0.83 mol) of trimellitic anhydride chloride was added to the solution at this temperature.
  • trimellitic acid chloride was dissolved, 130 g of triethylamine was added to the solution.
  • the temperature was raised to 180 ° C. and the reaction for 5 hours completed imidization.
  • the reaction solution was put into methanol to precipitate a polymer.
  • the precipitated polymer was dried and then dissolved in N-methyl-2-pyrrolidone.
  • the solution was poured into methanol to precipitate the polymer again.
  • the precipitated polymer was dried under reduced pressure to obtain a purified powdery polyetheramideimide.
  • Varnish B containing 120 g of the obtained polyether amide imide and 6 g of a silane coupling agent (trade name: SH6040 manufactured by Shin-Etsu Chemical Industry Co., Ltd.) dissolved in 360 g of N-methyl-2-pyrrolidone and containing an aromatic polyether amide imide. I got -1.
  • a silane coupling agent trade name: SH6040 manufactured by Shin-Etsu Chemical Industry Co., Ltd.
  • Varnish B-2 (varnish for forming a non-adhesive layer) 40 g of the polyether amide imide synthesized in Production Example 3 and 2 g of a silane coupling agent (manufactured by Shinetsu Chemical Industry Co., Ltd., trade name: SH6040) were dissolved in 500 g of N-methyl-2-pyrrolidone to obtain an aromatic polyether amide imide. A varnish B-2 containing was obtained.
  • Example 1 A polyimide film having a thickness of 25 ⁇ m (Kapton 100EN, manufactured by Toray DuPont Co., Ltd.) was used as a support film. Varnish A-1 was cast on one side of this polyimide film to a thickness of 25 ⁇ m. The coating film was dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to obtain a temporary protective film having an adhesive layer having a thickness of 3 ⁇ m on one side of the support film. The adhesive layer was a layer having a glass transition temperature of 230 ° C., a 5% weight loss temperature of 451 ° C., and an elastic modulus of 150 MPa at 230 ° C.
  • the varnish B-1 was poured to a thickness of 20 ⁇ m on the surface opposite to the surface on which the adhesive layer of the polyimide film was provided.
  • the coating film was dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a non-adhesive layer having a thickness of 2 ⁇ m.
  • This non-adhesive layer was a layer having a glass transition temperature of 260 ° C., a 5% weight loss temperature of 421 ° C., and an elastic modulus of 1700 MPa at 230 ° C. As a result, as shown in FIG.
  • Example 1 a temporary protective film of Example 1 in which an adhesive layer was provided on one surface of the support film and a non-adhesive layer was provided on the other surface was obtained.
  • the ratio of the thickness (A) of the adhesive layer to the thickness (C) of the support film was 0.12.
  • the surface roughness (Ra) of the surface (the back surface of the temporary protective film) opposite to the surface of the non-adhesive layer in contact with the support film is 0.26 ⁇ m under condition 1 and 0 under condition 2. It was 0.6 ⁇ m.
  • the temporary protective film of Example 1 was adhered to a copper lead frame (50 mm ⁇ 200 mm) coated with palladium at a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and a 90-degree peel strength between the adhesive layer and the lead frame at 25 ° C.
  • peeling speed 300 mm per minute, the same applies hereinafter
  • FIG. 5 is a schematic view showing a method for evaluating warpage. As shown in FIG. 5, a lead frame with a temporary protective film to which the temporary protective film 10 is attached to the lead frame 11 is placed on a table 200, and the warp (X) of the lead frame with the temporary protective film in the longitudinal direction is measured. It was measured. As a result of measuring the warp (X) by the temporary protective film of Example 1, the warp (X) was about 0.1 mm.
  • the obtained package has the structure shown in FIG.
  • a silver paste was used to bond the semiconductor elements, and the silver paste was cured by heating at 150 ° C. for 60 minutes.
  • the wire bond was carried out by using a gold wire as a wire and heating at 260 ° C. for 5 minutes.
  • a biphenyl encapsulant (manufactured by Hitachi Kasei Co., Ltd., trade name: CEL9200) was used as the encapsulant in the encapsulation step.
  • a sealing layer was formed at a temperature of 180 ° C., a pressure of 10 MPa, and a time of 3 minutes, and then the sealing layer was cured by heating at 180 ° C. for 5 hours. No problem occurred in any of the steps.
  • the 90 degree peel strength was 150 N / m and it could be easily peeled off, and the resin remained almost on the lead frame and the sealing resin. I didn't. A very small amount of residual resin could also be removed by washing with N-methyl-2-pyrrolidone. Further, this package was divided to produce a package having one semiconductor element each as shown in FIG. There were no problems during the process.
  • Example 2 A polyimide film having a thickness of 25 ⁇ m (UPILEX SPA manufactured by Ube Industries, Ltd.) was used as a support film. Varnish A-1 was cast on one side of this polyimide film to a thickness of 40 ⁇ m. The coating film was dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to obtain a temporary protective film having an adhesive layer having a thickness of 6 ⁇ m on one side of the support film. The adhesive layer was a layer having a glass transition temperature of 230 ° C., a 5% weight loss temperature of 451 ° C., and an elastic modulus of 150 MPa at 230 ° C.
  • UPILEX SPA manufactured by Ube Industries, Ltd.
  • the varnish B-2 was poured to a thickness of 100 ⁇ m on the surface opposite to the surface on which the adhesive layer of the polyimide film was provided.
  • the coating film was dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a non-adhesive layer having a thickness of 5 ⁇ m.
  • This non-adhesive layer was a layer having a glass transition temperature of 260 ° C., a 5% weight loss temperature of 421 ° C., and an elastic modulus of 1700 MPa at 230 ° C. As a result, as shown in FIG.
  • the temporary protective film of Example 2 in which the adhesive layer was provided on one surface of the support film and the non-adhesive layer was provided on the other surface was obtained.
  • the ratio of the thickness (A) of the adhesive layer to the thickness (C) of the support film was 0.24.
  • the surface roughness (Ra) of the surface (the back surface of the temporary protective film) opposite to the surface of the non-adhesive layer in contact with the support film is 0.22 ⁇ m under condition 1 and 0 under condition 2. It was 0.8 ⁇ m.
  • Example 3 A polyimide film having a thickness of 25 ⁇ m (UPILEX SGA, manufactured by Ube Industries, Ltd.) was used as a support film. Varnish A-1 is cast on one side of this polyimide film to a thickness of 60 ⁇ m, dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes, and an adhesive layer having a thickness of 9 ⁇ m is provided on one side of the support film. A temporary protective film was obtained. The adhesive layer had an elastic modulus of 150 MPa at a glass transition temperature of 230 ° C., a 5% weight loss temperature of 451 ° C., and 230 ° C.
  • the varnish B-2 for forming the non-adhesive layer produced in Production Example 2 was poured to a thickness of 180 ⁇ m on the surface opposite to the surface on which the adhesive layer of the polyimide film was provided, and 100 It was dried at ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a non-adhesive layer having a thickness of 9 ⁇ m.
  • the glass transition temperature of this non-adhesive layer was 260 ° C.
  • the 5% weight loss temperature was 421 ° C.
  • the elastic modulus at 230 ° C. was 1700 MPa.
  • the temporary protective film of Example 3 in which the adhesive layer was provided on one surface of the support film and the non-adhesive layer was provided on the other surface was obtained.
  • the ratio of the thickness (A) of the adhesive layer to the thickness (C) of the support film was 0.36.
  • the surface roughness (Ra) of the surface (the back surface of the temporary protective film) opposite to the surface of the non-adhesive layer in contact with the support film is 0.67 ⁇ m under condition 1 and 1 under condition 2. It was .1 ⁇ m.
  • Comparative Example 1 As the support film, a polyimide film (UPIREX SPA manufactured by Ube Industries, Ltd.) having a 25 ⁇ m-thick surface subjected to plasma treatment was used. Varnish A-2 was cast on one side of this polyimide film to a thickness of 50 ⁇ m. The coating film was dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form an adhesive layer having a thickness of 10 ⁇ m. This adhesive layer was a layer having a glass transition temperature of 187 ° C., a 5% weight loss temperature of 429 ° C., and an elastic modulus of 5 MPa at 230 ° C.
  • UPIREX SPA manufactured by Ube Industries, Ltd.
  • varnish B-1 was cast on the opposite surface of the polyimide film to a thickness of 50 ⁇ m.
  • the coating film was dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a non-adhesive layer having a thickness of 10 ⁇ m.
  • This non-adhesive layer was a layer having an elastic modulus of 1700 MPa at a glass transition temperature of 260 ° C. and a 5% weight loss temperature of 421 ° C. and 230 ° C.
  • a temporary protective film of Comparative Example 1 in which an adhesive layer was provided on one surface of the support film and a non-adhesive layer was provided on the other surface was obtained.
  • the surface roughness (Ra) of the surface (the back surface of the temporary protective film) opposite to the surface of the non-adhesive layer in contact with the support film is 0.05 ⁇ m under condition 1 and 0 under condition 2. It was .3 ⁇ m.
  • the semiconductor element bonding, wire bonding step, and sealing step were performed in the same manner as in Example 1, but the lead frame and the stage slipped in the lead frame transfer step. Due to the bad condition, a transportation problem was seen.
  • the temporary protective film of the example in which the surface roughness (Ra) of the back surface is 0.1 ⁇ m or more under condition 1 and 0.4 ⁇ m or more under condition 2 has high adhesion to the lead frame at 25 ° C. and is sealed with a resin. Since it can be peeled off from the lead frame and the sealing material after being stopped, the semiconductor package can be manufactured with high workability and productivity.
  • the semiconductor adhesive film of the comparative example in which the surface roughness (Ra) of the back surface is less than 0.1 ⁇ m under condition 1 and less than 0.4 ⁇ m under condition 2 has poor slippage on the stage in the semiconductor assembly process. Transport defects are observed, and workability and productivity are inferior to those of the temporary protective film of the example.
  • Comparative Example 2 A polyimide film having a thickness of 25 ⁇ m (UPILEX SPA manufactured by Ube Industries, Ltd.) was used as a support film. Varnish A-1 was cast on one side of this polyimide film to a thickness of 40 ⁇ m. The coating film was dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to obtain a temporary protective film having an adhesive layer having a thickness of 6 ⁇ m on one side of the support film. The adhesive layer was a layer having a glass transition temperature of 230 ° C., a 5% weight loss temperature of 451 ° C., and an elastic modulus of 150 MPa at 230 ° C.
  • the varnish B-1 was poured to a thickness of 35 ⁇ m on the surface opposite to the surface on which the adhesive layer of the polyimide film was provided.
  • the coating film was dried at 100 ° C. for 10 minutes and at 300 ° C. for 10 minutes to form a non-adhesive layer having a thickness of 5 ⁇ m.
  • This non-adhesive layer was a layer having an elastic modulus of 1700 MPa at a glass transition temperature of 260 ° C. and a 5% weight loss temperature of 421 ° C. and 230 ° C. As a result, as shown in FIG.
  • a temporary protective film of Comparative Example 2 in which an adhesive layer was provided on one surface of the support film and a non-adhesive layer was provided on the other surface was obtained.
  • the ratio of the thickness (A) of the adhesive layer to the thickness (C) of the support film was 0.24.
  • the surface roughness (Ra) of the surface (the back surface of the temporary protective film) opposite to the surface of the non-adhesive layer in contact with the support film is 0.06 ⁇ m under condition 1 and 0 under condition 2. It was .3 ⁇ m.
  • the temporary protective film of the example had a lower maximum stress value in the friction test than the temporary protective film of the comparative example.
  • the temporary protective film of Example 1 When the temporary protective film of Example 1 was used, it was confirmed that there was no transport defect.
  • the temporary protective film of Comparative Example 1 when the temporary protective film of Comparative Example 1 was used, a transport problem occurred. It can be said that even in the case of the temporary protective films of Examples 1 and 2 showing the maximum stress value equal to or less than the maximum stress value of the temporary protective film of Example 1 in the friction test, the transfer failure is sufficiently suppressed.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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  • Laminated Bodies (AREA)
PCT/JP2020/023647 2019-06-19 2020-06-16 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 Ceased WO2020255975A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PH1/2021/552880A PH12021552880A1 (en) 2019-06-19 2020-06-16 Temporary protective film for semiconductor encapsulation molding, lead frame with temporary protective film, encapsulation molded body with temporary protective film, and method for manufacturing semiconductor device
JP2021528275A JP7803713B2 (ja) 2019-06-19 2020-06-16 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法
CN202080036328.2A CN113874989A (zh) 2019-06-19 2020-06-16 半导体密封成形用临时保护膜、带有临时保护膜的引线框、带有临时保护膜的密封成形体以及制造半导体装置的方法
KR1020217036713A KR102833268B1 (ko) 2019-06-19 2020-06-16 반도체 밀봉 성형용 임시 보호 필름, 임시 보호 필름 부착 리드 프레임, 임시 보호 필름 부착 밀봉 성형체, 및 반도체 장치를 제조하는 방법
US17/613,933 US12451367B2 (en) 2019-06-19 2020-06-16 Temporary protective film for semiconductor encapsulation molding, lead frame with temporary protective film, encapsulation molded body with temporary protective film, and method for manufacturing semiconductor device

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