WO2020001387A1 - 掩膜版及其制作方法、蒸镀方法、显示屏 - Google Patents

掩膜版及其制作方法、蒸镀方法、显示屏 Download PDF

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Publication number
WO2020001387A1
WO2020001387A1 PCT/CN2019/092398 CN2019092398W WO2020001387A1 WO 2020001387 A1 WO2020001387 A1 WO 2020001387A1 CN 2019092398 W CN2019092398 W CN 2019092398W WO 2020001387 A1 WO2020001387 A1 WO 2020001387A1
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WIPO (PCT)
Prior art keywords
opening
area
shielding portion
display
display screen
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Application number
PCT/CN2019/092398
Other languages
English (en)
French (fr)
Inventor
白珊珊
孙阔
韩乔楠
谢东妹
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to EP19826522.5A priority Critical patent/EP3816321A4/en
Priority to US16/619,277 priority patent/US11355707B2/en
Priority to JP2019563193A priority patent/JP7437159B2/ja
Publication of WO2020001387A1 publication Critical patent/WO2020001387A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/82—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a mask plate, a manufacturing method thereof, a vapor deposition method, and a display screen.
  • full screen is a hot spot in the mobile phone industry.
  • full screen means that the front of the phone is a screen.
  • the four bezel positions of the phone are frameless designs, pursuing a screen ratio close to 100%.
  • the so-called “full screen” in the industry is not a full screen in the true sense, but only a screen with a high screen ratio.
  • the upper end of this screen is provided with a specific area in which a handset and a front camera are set. , Sensors and other components need to be set on the front of the screen, and this area is not normally displayed, this is commonly known as “full bangs screen”.
  • the embodiments of the present disclosure provide a mask plate, a manufacturing method thereof, a vapor deposition method, and a display substrate, so as to achieve normality around the components such as the earpiece, front camera, and sensor on the front of the display Display, increase screen ratio.
  • an embodiment of the present disclosure provides a mask plate, the mask plate includes: a substrate, the substrate has at least one opening, and the opening is in an orthographic projection with a display plane of a display screen to be produced and The display areas of the display screen to be produced are overlapped; a shielding portion is provided inside the opening, and the orthographic projection of the shielding portion on the display plane and the components to be shielded in the display screen to be produced are The orthographic projections on the display plane overlap; a connecting portion is located between the shielding portion and a side wall of the opening, and the connecting portion is used to connect the shielding portion and a side wall of the opening.
  • the connecting portion has a mesh structure.
  • an orthographic projection of each mesh of the mesh structure on the display plane covers at least one sub-pixel on the display screen to be produced, and a solid part of the mesh structure is on the display
  • the orthographic projection on the plane is in a gap region between the sub-pixels on the display screen to be produced.
  • a solid portion between two adjacent meshes in the mesh structure has a gap penetrating the adjacent two meshes.
  • the connecting portion is an integrated structure and is an axisymmetric structure, and the axis of symmetry of the connecting portion passes through the center of the shielding portion and is perpendicular to the side wall of the opening to which the connecting portion is connected; the connecting portion and The width of the end connected to the shielding portion is less than or equal to the maximum width of the shielding portion in a direction perpendicular to the axis of symmetry of the connection portion, and the width of the end connected to the opening sidewall is greater than or It is equal to the width of the end of the connecting portion connected to the shielding portion.
  • connection portion includes at least two independent sub-connection portions and is an axisymmetric structure, and the axis of symmetry of the connection portion passes through the center of the shielding portion and is perpendicular to the side wall of the opening to which the connection portion is connected. ;
  • the at least two sub-connecting portions are symmetrically arranged with respect to the axis of symmetry; a width of an end of each of the sub-connecting portions connected to the opening sidewall is greater than or equal to that of the sub-connecting portion connected to the shielding portion; The width of one end.
  • the connecting portion is connected to an opening side wall closest to the shielding portion.
  • the substrate, the shielding portion, and the connection portion are integrated structures.
  • the shape of the orthographic projection of the blocking portion on the display plane is the same as the shape of the orthographic projection of the component to be blocked in the display screen to be produced on the display plane, and the blocking portion
  • the area of the orthographic projection on the display plane is equal to or slightly larger than the area of the orthographic projection of the component to be shielded on the display plane to be produced.
  • an embodiment of the present disclosure provides a method for manufacturing a mask, the manufacturing method includes: providing a substrate; removing a specific portion of the substrate to form at least one opening on the substrate; and A shielding portion and a connecting portion are formed inside the opening; wherein the orthographic projection of the opening on the display plane of the display screen to be produced coincides with the display area of the display screen to be produced, and the shielding portion is in the opening.
  • the orthographic projection on the display plane coincides with the orthographic projection of the component to be shielded in the display screen to be produced on the display plane, and the connecting portion is connected between the shielding portion and the side wall of the opening.
  • the step of removing a specific portion of the substrate to form at least one opening in the substrate and forming a shielding portion and a connecting portion inside the opening includes: using a wet Method or laser etching process, removing the part of the substrate except the shielding part and the connection part to be formed in the opening area to be formed, and forming a mesh in the area of the connection part to be formed to form the At least one opening, the shielding portion, and the connection portion having a mesh structure.
  • a wet etching process is used to remove a portion of the substrate in the region to be formed except the shielding portion and the connection portion to be formed, to form the at least one opening, the shielding portion, and the connection portion.
  • a prototype of the connection portion is etched by a laser etching process, and a mesh is made in the prototype of the connection portion to obtain a connection portion having a mesh structure.
  • an embodiment of the present disclosure provides a vapor deposition method.
  • the vapor deposition method includes at least two vapor depositions.
  • Each of the vapor deposition methods in the first, second, and third alternatives of the first aspect is used.
  • the mask plate After each vapor deposition, before the next vapor deposition, the mask plate is moved by a set distance in a set direction; wherein the set direction and the set distance are determined according to the The arrangement of the meshes in the mesh structure of the connection portion in the mask plate is determined so that after the at least two evaporations are completed, the vapor-deposited film layers formed through the meshes can communicate with each other and pass through the connection
  • the vapor-deposited film layer formed in the portion can communicate with the vapor-deposited film layer formed in a region other than the connection portion and the shielding portion in the opening.
  • the sum of the thickness of the film layer deposited by the at least two evaporations is the design thickness of the film layer.
  • the vapor deposition method includes two vapor depositions, and the film thickness of each vapor deposition is half of the designed film thickness of the film layer.
  • an embodiment of the present disclosure provides a display screen, the display screen includes a conventional display area and a functional component area; the functional component of the display screen is provided in the functional component area, and the functional component area
  • the shape is the same as the orthographic projection shape of the functional components set inside on the display plane, and the area of the functional component area is equal to or slightly larger than the orthographic projection area of the functional components set inside on the display plane; the general A display area surrounds the function area.
  • an electrode layer is provided in the conventional display area; the conventional display area includes a connection transition zone, and the connection transition zone is located on the side of the conventional display area closest to the functional component area.
  • the electrode layer includes at least two sub-electrode layers that are arranged in a stack, each of the sub-electrode layers in the connection transition zone includes a plurality of electrodes spaced apart from each other, and a plurality of the same sub-electrode layer
  • An electrode is disposed in a gap between a plurality of electrodes in a sub-electrode layer adjacent to the sub-electrode layer, so that the electrodes in the connection transition zone are electrically connected to each other; or, in the connection transition zone, all electrodes
  • the electrode layer includes a plurality of electrodes spaced apart from each other, and adjacent electrodes are electrically connected through electrode segments, so that the plurality of electrodes are electrically connected to each other.
  • FIG. 1 is a plan view of a display screen mother board with a full screen envisaged
  • FIG. 2 is a plan structural view of a masked version of a full screen in the assumption
  • FIG. 3 is a plan structural view of a mask plate provided by an embodiment of the present disclosure.
  • 4a to 4d are plan structural views of a single display unit in a mask plate provided by an embodiment of the present disclosure
  • FIG. 5a to FIG. 5c are plan views of the layout of the meshes of the connection part in the mask plate provided by the embodiment of the present disclosure.
  • FIG. 6 is a plan structural view of a connecting portion of a mesh structure in a mask plate according to an embodiment of the present disclosure
  • FIGS. 7a to 7c are schematic diagrams of three implementation manners of a vapor deposition method provided by an embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of another evaporation method provided by an embodiment of the present disclosure.
  • FIG. 9 is a plan structural view of a display screen provided by an embodiment of the present disclosure.
  • FIG. 10 is a partial enlarged view of the connection transition area AA1 in FIG. 9; FIG.
  • FIG. 11 is a cross-sectional view taken along a section line aa ′ of FIG. 10;
  • FIG. 12 is another partial enlarged view of the connection transition area AA1 in FIG. 9.
  • FIG. 1 illustrates a display mother board 100.
  • the display mother board 100 is an OLED (Organic Light-Emitting Diode) display device as an example, where 2 is a vapor deposition area and corresponds to a display.
  • OLED Organic Light-Emitting Diode
  • a through-hole area 3 needs to be provided in the evaporation area 2 and the functional components (such as a camera) on the front of the screen are set in the through-hole area 3.
  • FIG. 2 shows a mask of a vapor-deposited EL material, in which 4 is a metal frame, 5 is a substrate, and 6 is an opening, corresponding to an effective display area of the screen, that is, the vapor-deposition area 2.
  • the area corresponding to the through-hole area 3 in the opening 6 needs to be shielded, that is, the shielding area 7 shown in FIG. 2.
  • this requires that the part to be shielded is suspended in the opening 6, and this technical requirement cannot be realized at present.
  • an embodiment of the present disclosure proposes a mask plate 300, which includes a substrate 5, a shielding portion 8, and a connection portion 9.
  • the substrate 5 has at least one opening 6.
  • the orthographic projection of the opening 6 on the display plane of the display screen to be produced coincides with the display area of the display screen to be produced during evaporation.
  • the orthographic projection of the shielding part 8 on the display plane of the display screen to be produced during plating coincides with the orthographic projection of the parts to be shielded on the display plane to be produced, such as camera, earpiece, sensor and other functional components;
  • the connecting portion 9 is connected between the shielding portion 8 and a side wall of the opening 6, and is used for supporting the shielding portion 8.
  • a shielding portion 8 is provided inside the opening 6 of the mask plate 300, and the shielding portion 8 is fixed in the opening 6 by the connecting portion 9.
  • the shielding portion 8 can shield components (such as a camera, an earpiece, a sensor, and the like) in the display screen that need to be shielded, thereby avoiding deposition of vapor deposition materials on these components. Since the surrounding areas of these components are not shielded, the evaporation of the film layer can be performed normally, so that the areas around these components can be displayed, the screen ratio is increased, and a full-screen design is realized.
  • the mask 300 provided in this embodiment is suitable for vapor-depositing various functional film layers of the light emitting device in the OLED display device, for example, an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. , Cathode layer, etc., the evaporation materials required for these functional film layers can be collectively referred to as EL materials.
  • these functional film layers are usually a whole layer of thin film, so the mask plate 300 in this embodiment can be used for vapor deposition; the mask plate 300 in this embodiment is called Open Mask.
  • connection portion 9 in the mask 300 may have a mesh structure, so that the shielding area of the connection portion 9 can be reduced, and the evaporation can be performed.
  • the material can be vapor-deposited on the display area corresponding to the connection portion 9 through the mesh of the mesh structure of the connection portion 9 to achieve normal display in the display area corresponding to the connection portion 9 and further increase the screen ratio.
  • the connecting portion 9 is an integrated structure and is an axisymmetric structure.
  • the symmetry axis L of the connecting portion 9 passes through the center of the shielding portion 8 and is perpendicular to the side of the opening 6 to which the connecting portion 9 is connected.
  • the width d1 of the end of the connecting portion 9 connected to the shielding portion 8 is smaller than or equal to the maximum width of the shielding portion 8 in a direction perpendicular to the symmetry axis L of the connecting portion 9, and the width of the end d2 of the connecting portion 9 connected to the side wall of the opening 6 is The width is larger than the width of one end d1 of the connecting portion 9 connected to the shielding portion 8.
  • the connecting portion 9 is an axisymmetric structure and can be regarded as a trapezoidal shape, so that the supporting force provided by the connecting portion 9 for the shielding portion 8 is relatively symmetrical, and between the shielding portion 8 and the side wall of the opening 6 The connection is relatively stable.
  • the connecting portion 9 is an integrated structure and is an axisymmetric structure.
  • the symmetry axis L of the connecting portion 9 passes through the center of the shielding portion 8 and is perpendicular to the side of the opening 6 to which the connecting portion 9 is connected.
  • the width d1 of the end of the connecting portion 9 connected to the shielding portion 8 is smaller than or equal to the maximum width of the shielding portion 8 in a direction perpendicular to the symmetry axis L of the connecting portion 9, and the width of the end d2 of the connecting portion 9 connected to the side wall of the opening 6 is The width is equal to the width of one end d1 of the connecting portion 9 connected to the shielding portion 8.
  • the connecting portion 9 is an axisymmetric structure and can be regarded as a rectangular shape, so that the supporting force provided by the connecting portion 9 to the shielding portion 8 is relatively symmetrical, and the shielding area of the connecting portion 9 to the display area is relatively small. small.
  • the connecting portion 9 includes at least two sub-connecting portions 91, 92, and the symmetry axis L of the connecting portion 9 passes through the center of the shielding portion 8 and is perpendicular to the side of the opening 6 to which the connecting portion 9 is connected; All the sub-connecting portions (for example, the sub-connecting portions 91 and 92) included in the connecting portion 9 are symmetrically arranged with respect to the symmetry axis L.
  • the width d1 of the end of each sub-connecting portion connected to the side wall of the opening 6 is greater than the width d2 of the end of the sub-connecting portion connected to the shielding portion 8.
  • all the sub-connecting portions 9 are symmetrically arranged with respect to the symmetry axis L, and each of the sub-connecting portions 9 can be regarded as a trapezoid-like shape, so that the supporting force provided by the connecting portion 9 as a whole as the shielding portion 8 is relatively symmetrical.
  • the connection between the shielding portion 8 and the side wall of the opening 6 is relatively stable, and the shielding area of the display portion by the connecting portion 9 as a whole is small.
  • the connecting portion 9 includes at least two sub-connecting portions 91 and 92.
  • the symmetry axis L of the connecting portion 9 passes through the center of the shielding portion 8 and is perpendicular to the side of the opening 6 connected by the connecting portion 9. All the sub-connecting portions (for example, the sub-connecting portions 91 and 92) included in the connecting portion 9 are symmetrically arranged with respect to the symmetry axis L.
  • the width d1 of the end of each sub-connecting portion connected to the side wall of the opening 6 is equal to the width d2 of the end of the sub-connecting portion connected to the shielding portion 8.
  • all the sub-connecting portions 9 are symmetrically arranged with respect to the axis of symmetry L, and each of the sub-connecting portions 9 can be regarded as a rectangular shape, so that the supporting force provided by the connecting portion 9 as a whole as the shielding portion 8 is relatively symmetrical.
  • the connection between the shielding portion 8 and the side wall of the opening 6 is relatively stable, and the shielding area of the display portion by the connecting portion 9 as a whole is small.
  • each mesh 93 of the mesh structure of the connecting portion 9 on the display plane of the display screen to be produced covers the corresponding area of the display screen to be produced.
  • At least one sub-pixel, and the orthographic projection of the solid portion 94 of the mesh structure on the display plane of the display screen to be produced is in the gap region between the sub-pixels of the corresponding area on the display screen to be produced.
  • 5a to 5c respectively show three different arrangements of the sub-pixels.
  • the mesh structure of the connecting portion 9 can be correspondingly designed.
  • each mesh 93 is internally solid.
  • the portions 94 are separated, so that the cathode layers vapor-deposited in each mesh may not be able to communicate with each other.
  • a gap 95 may be provided in the solid portion 94 between two adjacent meshes 93 in the mesh structure of the connecting portion 9 so that the gap 95 penetrates the two adjacent ones.
  • a mesh 93 may be provided in the solid portion 94 between two adjacent meshes 93 in the mesh structure of the connecting portion 9 so that the gap 95 penetrates the two adjacent ones.
  • the cathode material is also deposited in the notch 95 while being deposited in the mesh 93, thereby realizing the electrical connection of the cathode layers in each mesh 93.
  • a gap can be provided in the solid portion 94 between the mesh 93 and the opening 6 located at the edge in the mesh structure to achieve the communication between the meshes 93 and the opening 6 of the mesh structure.
  • the vapor-deposited film layer formed through the mesh structure can communicate with the film layer in a region other than the mesh structure, thereby achieving electrical connection of the entire film layer.
  • the connecting portion 9 may be connected to the side wall of the opening 6 closest to the shielding portion 8 to reduce the shielding area of the display portion by the connecting portion 9.
  • the substrate 5, the shielding portion 8, and the connection portion 9 may be formed as an integrated structure, and the materials of the three may be all Invar alloys.
  • the shape of the orthographic projection of the shielding portion 8 on the display plane is the same as the shape of the corresponding orthographic projection of the corresponding component to be shielded on the display plane.
  • the area of the orthographic projection on the display plane is equal to or slightly larger than the area of the orthographic projection of the corresponding component to be shielded on the display plane, which enables the shielding portion 8 to ensure that the screen needs to be shielded during the evaporation process. While the components are effectively shielded, it is also possible to avoid as much as possible from blocking the area around the components in the display screen that need to be shielded.
  • the number of the shielding portions 8 and the corresponding connecting portions 9 included in each opening 6 is not limited to one, and the number of the two depends on the components of the display screen to be shielded. Quantity.
  • the mask 300 in this embodiment may further include a metal frame 4 for supporting the substrate 5 to prevent the substrate 5 from being deformed.
  • an embodiment of the present disclosure further provides a method for manufacturing a mask plate.
  • the manufacturing method includes the following steps:
  • the provided substrate may be a complete substrate, and the material of the substrate may be Invar or other materials that can be used to make a mask.
  • S2 Please refer to FIG. 3 again to remove a specific portion of the substrate to form at least one opening 6, a shielding portion 8, and a connecting portion 9 on the substrate; wherein, the opening 6 is directly on the display plane of the display screen to be produced.
  • the projection coincides with the display area of the display screen to be produced.
  • the shielding portion 8 and the connecting portion 9 are located inside the opening 6.
  • the orthographic projection of the shielding portion 8 on the display plane of the display screen to be produced and the display screen to be produced need to be shielded.
  • the orthographic projections of the components on the display plane coincide, and the connecting portion 9 is connected between the shielding portion 8 and the side wall of the opening 6.
  • step S2 "removing a specific portion in the substrate” may be a wet etching process, a laser etching process, or a combination of a wet etching process and a laser etching process.
  • the above step S2 may specifically include: using a wet etching process or a laser etching process to remove a part of the substrate in the region to be formed in the opening 6 except for the shielding part 8 and the connection part 9 to be formed.
  • a mesh is made in the region where the connection portion 9 is to be formed, and at least one opening 6, a shielding portion 8, and a connection portion 9 having a mesh structure are formed. That is, the opening 6, the shielding portion 8, and the connection portion 9 having a mesh structure can be formed under the same etching process.
  • the above-mentioned step S2 may specifically include: first, using a wet etching process to remove a portion of the substrate except the shielding portion 8 and the connecting portion 9 in the region of the opening 6 to be formed, to form at least An opening 6, a shielding portion 8, and a prototype of the connecting portion 9; then, a prototype of the connecting portion 9 is etched by a laser etching process, and a mesh is formed in the prototype of the connecting portion 9 to obtain a connecting portion 9 having a mesh structure. That is to say, a prototype of the opening 6, the shielding portion 8, and the connecting portion 9 can be formed by an etching process, and then the mesh structure of the connecting portion 9 can be formed by an etching process.
  • the solid portion 94 between two adjacent meshes 93 in the mesh structure has a notch 95, and the notch 95 can be made by laser drilling.
  • an embodiment of the present disclosure further provides a vapor deposition method.
  • the vapor deposition method includes at least two vapor depositions, and each time In this case, a mask plate having a mesh structure in the connection portion is used, and the mask plate is moved in a set direction by a set distance before each next vapor deposition after the vapor deposition.
  • the setting direction and the setting distance are determined according to the arrangement of the meshes 93 in the mesh structure of the connection portion in the mask, so that after the at least two evaporations are completed,
  • the vapor-deposited film layer (the vapor-deposited film layer formed through the respective meshes 93) can communicate with each other, and the film layer (the vapor-deposited film layer formed through the connection section) in the area corresponding to the connection portion can be opened with the mask.
  • the film layers in the area other than the connecting portion and the shielding portion are connected, thereby avoiding the problem that the vapor-deposited film layers in the meshes 93 cannot be connected to each other, which may be caused by only one evaporation, and ensures that the corresponding portions of the connecting portion Normal display of the display area.
  • the row direction with the meshes 93 arranged in the figure is the X direction
  • the direction perpendicular to the X direction is the Y direction
  • two evaporations may be performed.
  • the mask is translated by a certain distance in the X direction so that the positions of the meshes 93 after the translation correspond to the gaps between the meshes 93 before the translation.
  • each row of the vapor-deposited film layer communicates with a film layer (a vapor-deposited film layer formed in a region other than the connection portion and the shielding portion in the opening except the connection portion and the shielding portion) in the opening of the mask plate, thereby achieving Communication between the vapor-deposited film layers in all the meshes 93 is achieved.
  • the row direction in which the meshes 93 are arranged is the X direction, and the direction perpendicular to the X direction is the Y direction.
  • Two evaporations may be performed. Before the first vapor deposition is completed and the second vapor deposition is completed, the mask is translated by a certain distance in the Y direction, so that the positions of the meshes 93 after translation correspond to the gaps between the meshes 93 before translation, so that After the second vapor deposition, along the Y direction, the vapor-deposited film layers in two adjacent meshes 93 in the first vapor deposition are communicated through the vapor-deposited film layers in the meshes 93 in the second vapor deposition, thereby achieving each The vapor-deposited film layers in the meshes 93 communicate with each other.
  • the row direction with the meshes 93 arranged in the figure is the X direction
  • the direction perpendicular to the X direction is the Y direction
  • two evaporations may be performed.
  • the mask is translated by a certain distance in the illustrated direction (one direction between the X direction and the Y direction), so that the positions of the meshes 93 are translated correspondingly after the translation.
  • the above evaporation method is applicable to a film layer, such as a cathode layer, which needs to be interconnected in a vapor deposition display screen.
  • a mask shown in FIG. 6 can also be used, that is, between two adjacent meshes 93 in the mesh structure.
  • the solid part 94 has a notch 95, so that during evaporation, the vapor deposition material is deposited in the notch 95 at the same time as the vapor deposition material is deposited in the notch 95, thereby realizing the vapor-deposited film layer in each mesh 93 and each mesh 93
  • the vapor-deposited film layer in the substrate and the vapor-deposited film layer other than the network structure communicate with each other.
  • a mask without a gap 95 in a solid portion 94 between two adjacent meshes 93 in a mesh structure may also be used, as shown in FIG. 5a to
  • the mesh structure shown in FIG. 5c can directly utilize the diffusion effect of the vapor deposition material on the edge of the mesh 93 during the vapor deposition (known as Shadow in the industry), so that the vapor deposition film layers in the adjacent meshes 93 can communicate with each other.
  • the total thickness of the vapor-deposited film layer can be made the design thickness of the film layer to ensure the display screen's Yield.
  • the above-mentioned evaporation method may include two evaporations, and the film thickness of each evaporation is half of the designed film thickness of the film layer.
  • this embodiment further provides a display screen.
  • the display screen includes a conventional display area AA and a functional component area BB.
  • the functional component area BB is provided with functional components of a display screen, such as a camera, a handset, a sensor, etc.
  • the shape of the functional component area BB is the same as the shape of the orthographic projection of the functional components provided therein on the display plane, and the functional component area
  • the area of BB is equal to or slightly larger than the normal projection area of the functional components set on the display plane;
  • the normal display area AA has sub-pixels to achieve normal display functions, and the normal display area AA surrounds the functional component area BB, thereby
  • the area around the functional component area B can be displayed normally.
  • the above display screen may use the mask plate in any of the above embodiments to make an evaporation film layer, wherein the functional component area BB is an area shielded by the shielding portion 8 during the evaporation process, and the conventional display area AA is an evaporation process.
  • the evaporation area formed through the area inside the opening 6; the above display screen can realize the normal display of the area around the functional component area BB, so that the display screen has a relatively high screen occupation and can achieve a "full screen" design.
  • the conventional display area AA corresponds to the opening 6 area of the mask 300, which may include a connected transition area AA1 and a non-connected transition area AA2: the non-connected transition area AA2 is the main display area; the connected transition area AA1 is located between the functional component area BB and the side of the conventional display area AA adjacent to it, and corresponds to the connection portion 9 of the mask 300.
  • the functional component area BB corresponds to the shielding portion 8 of the mask plate 300.
  • An electrode layer is provided in the conventional display area AA, and the electrode layer may be a cathode layer.
  • the electrode layer 10 includes a stacked arrangement At least two sub-electrode layers, such as the sub-electrode layers 101 and 102 shown in FIG. 10 and FIG. 11, in the connection transition area AA1, each sub-electrode layer includes a plurality of electrodes spaced apart from each other, and the same sub-layer The plurality of electrodes included in the electrode layer are disposed in a gap between the plurality of electrodes in the sub-electrode layer adjacent to the sub-electrode layer.
  • FIGS. 10 and 11 For example, a plurality of electrodes in the sub-electrode layer 101 are shown in FIGS. 10 and 11.
  • the electrodes are arranged in the gaps between the plurality of electrodes in the sub-electrode layer 102.
  • the electrodes in the connection transition section AA1 are electrically connected to each other.
  • the sub-electrode layer 101 may be formed by using the mask 300 for the first vapor deposition, and its thickness is denoted as x1; the sub-electrode layer 102 may be performed by using the mask 300 for the second vapor deposition.
  • the thickness formed by plating is denoted as x2; x1 + x2 may be equal to the overall design thickness x of the electrode layer 10, and x1 and x2 may be equal. It can be seen from FIG. 11 that after two evaporations, the thickness of the electrode layer in the connection transition area AA1 is not uniform.
  • the thickness of the electrode layer in some areas is x1 or x2, and the thickness in some areas is x. .
  • the electrode layer 10 includes a plurality of spaced apart from each other.
  • the electrodes 103 and adjacent electrodes 103 are electrically connected through an electrode segment 104 so that the plurality of electrodes 103 are electrically connected to each other.
  • the plurality of electrodes 103 are formed by the electrode material passing through the meshes 93 of the mask 300, and the electrode segments 104 are formed by the electrode material passing through the notches 95 in the solid portion 94 of the mask 300.

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Abstract

一种掩膜版（300），包括：基板（5），具有至少一个开口（6），开口（6）在待制作的显示屏的显示平面上的正投影与待制作的显示屏的显示区重合；遮挡部（8），设置于开口（6）内部，遮挡部（8）在显示平面上的正投影与待制作的显示屏中需进行遮挡的部件在显示平面上的正投影重合；连接部（9），位于遮挡部（8）和开口（6）的侧壁之间，连接部（9）用于连接遮挡部（8）和开口（6）的侧壁。还包括一种掩膜版（300）的制作方法、蒸镀方法、显示屏。

Description

掩膜版及其制作方法、蒸镀方法、显示屏
本公开要求在2018年06月29日提交中国专利局、公开号为201810713053.6、公开名称为“掩膜版及其制作方法、蒸镀方法、显示屏”的中国专利公开的优先权，该公开的全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，尤其涉及一种掩膜版及其制作方法、蒸镀方法、显示屏。
背景技术
目前，“全面屏”是手机业界的一大热点，理论上“全面屏”是指手机的正面都是屏幕，手机的四个边框位置采用无边框设计，追求接近100％的屏占比。但是，实际上目前业界所谓的“全面屏”并非真正意义上的全面屏，而仅仅是高屏占比的屏幕，这种屏幕的上端设有一块特定区域，该区域内设置听筒、前置摄像头、传感器等需设置在屏幕正面显示的部件，而该区域并非可正常显示的，这就是俗称的“全面刘海屏”。
从审美和技术角度考虑，未来必然要将“刘海”消除。想要实现屏占比99％或者更高的真正“全面屏”设计，那就需要把听筒、前置摄像头、及包括距离传感器在内的各式传感器放置在手机屏幕底下，使这些器件周围的屏幕区域能够正常显示，但是这种技术在目前看来还很难实现。
发明内容
针对上述现有技术的现状，本公开的实施例提供一种掩膜版及其制作方法、蒸镀方法、显示基板，以在显示屏正面的听筒、前置摄像头、及传感器等部件周围实现正常显示，提高屏占比。
为达到上述目的，本公开的实施例采用如下技术方案：
第一方面，本公开实施例提供了一种掩膜版，所述掩膜版包括：基板， 所述基板具有至少一个开口，所述开口在待制作的显示屏的显示平面上的正投影与所述待制作的显示屏的显示区重合；遮挡部，设置于所述开口内部，所述遮挡部在所述显示平面上的正投影与所述待制作的显示屏中需进行遮挡的部件在所述显示平面上的正投影重合；连接部，位于所述遮挡部和所述开口的侧壁之间，所述连接部用于连接所述遮挡部和所述开口的侧壁。
基于上述技术方案，可选的，所述连接部具有网状结构。
可选的，所述网状结构的每个网眼在所述显示平面上的正投影覆盖所述待制作的显示屏上的至少一个子像素，且所述网状结构的实体部分在所述显示平面上的正投影处于所述待制作的显示屏上的子像素之间的间隙区域内。
可选的，所述网状结构中相邻的两个网眼之间的实体部分具有贯通该相邻的两个网眼的缺口。
可选的，所述连接部为一体结构且为轴对称结构，所述连接部的对称轴经过所述遮挡部的中心且垂直于所述连接部所连接的开口侧壁；所述连接部与所述遮挡部相连的一端的宽度小于或等于所述遮挡部沿垂直于所述连接部的对称轴的方向上的最大宽度，所述连接部与所述开口侧壁相连的一端的宽度大于或等于所述连接部与所述遮挡部相连的一端的宽度。
可选的，所述连接部包括至少两个独立的子连接部且为轴对称结构，所述连接部的对称轴经过所述遮挡部的中心且垂直于所述连接部所连接的开口侧壁；所述至少两个子连接部相对于所述对称轴对称布置；每个所述子连接部与所述开口侧壁相连的一端的宽度大于或等于所述子连接部与所述遮挡部相连的一端的宽度。
可选的，所述连接部与最靠近所述遮挡部的开口侧壁相连接。
可选的，所述基板、所述遮挡部和所述连接部为一体结构。
可选的，所述遮挡部在所述显示平面上的正投影的形状与所述待制作的显示屏中需进行遮挡的部件在所述显示平面上的正投影的形状相同，所述遮挡部在所述显示平面上的正投影的面积等于或略大于所述待制作的显示屏中需进行遮挡的部件在所述显示平面上的正投影的面积。
第二方面，本公开的实施例提供了一种掩膜版的制作方法，所述制作方 法包括：提供基板；去除所述基板中的特定部分，以在所述基板上形成至少一个开口、并在所述开口内部形成遮挡部及连接部；其中，所述开口在待制作的显示屏的显示平面上的正投影与所述待制作的显示屏的显示区重合，所述遮挡部在所述显示平面上的正投影与所述待制作的显示屏中需进行遮挡的部件在所述显示平面上的正投影重合，所述连接部连接于所述遮挡部和所述开口的侧壁之间。
基于上述技术方案，可选的，所述去除所述基板中的特定部分，以在所述基板上形成至少一个开口、并在所述开口内部形成遮挡部及连接部的步骤，包括：采用湿法刻蚀工艺或激光刻蚀工艺，去除所述基板中待形成开口区域内除待形成遮挡部及连接部以外的区域的部分，并且在待形成连接部区域内制作出网眼，以形成所述至少一个开口、所述遮挡部、及具有网状结构的所述连接部。或者，采用湿法刻蚀工艺，去除所述基板中待形成开口区域内除待形成遮挡部及连接部以外的区域的部分，形成所述至少一个开口、所述遮挡部、及所述连接部的雏形；采用激光刻蚀工艺刻蚀所述连接部的雏形，在所述连接部的雏形中制作网眼，得到具有网状结构的连接部。
第三方面，本公开的实施例提供了一种蒸镀方法，该蒸镀方法包括至少两次蒸镀，每次蒸镀时采用如第一方面的第一、二、三个可选方案中所述的掩膜版，每次蒸镀后进行下一次蒸镀前，将所述掩膜版沿设定方向移动设定距离；其中，所述设定方向和所述设定距离根据所述掩膜版中连接部的网状结构中网眼的排列情况而定，以使完成所述至少两次蒸镀后，透过各网眼所形成的蒸镀膜层能够相互连通，且透过所述连接部所形成的蒸镀膜层能够与所述开口内除连接部及遮挡部以外的区域所形成的蒸镀膜层连通。
基于上述技术方案，可选的，所述至少两次蒸镀所蒸镀的膜层厚度之和为该膜层的设计厚度。
可选的，所述蒸镀方法包括两次蒸镀，每次蒸镀的膜厚为该膜层的设计膜厚的一半。
第四方面，本公开的实施例提供了一种显示屏，所述显示屏包括常规显示区及功能部件区；所述功能部件区内设置有所述显示屏的功能部件，所述 功能部件区的形状与其内部所设置的功能部件在显示平面上的正投影形状相同，且所述功能部件区的面积等于或略大于其内部所设置的功能部件在显示平面上的正投影面积；所述常规显示区包围所述功能部件区。
基于上述技术方案，可选的，所述常规显示区内设有电极层；所述常规显示区包括连接过渡分区，所述连接过渡分区处于所述功能部件区与其最靠近的常规显示区的边之间；所述电极层包括层叠设置的至少两层子电极层，在所述连接过渡分区内，每层所述子电极层包括相互间隔的多个电极，同一层子电极层中的多个电极设置于与该子电极层相邻的子电极层中的多个电极之间的间隙，以使所述连接过渡分区内的各电极相互电连接；或者，在所述连接过渡分区内，所述电极层包括相互间隔的多个电极，相邻的电极之间通过电极段电连接，以使所述多个电极相互电连接。
附图说明
为了更清楚地说明本公开实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为设想中全面屏的显示屏母板的平面示图；
图2为设想中全面屏的掩膜版的平面结构图；
图3为本公开实施例所提供的掩膜版的平面结构图；
图4a～图4d为本公开实施例所提供的掩膜版中单个显示单元的平面结构图；
图5a～图5c为本公开实施例所提供的掩膜版中连接部的网眼的布置平面图；
图6为本公开实施例所提供的掩膜版中网状结构的连接部的平面结构图；
图7a～图7c为本公开实施例所提供的一种蒸镀方法的三种实施方式示意图；
图8为本公开实施例所提供的另一种蒸镀方法的示意图；
图9为本公开实施例所提供的显示屏的平面结构图；
图10为图9中连接过渡分区AA1的一种局部放大图；
图11为图10沿截面线aa＇的截面图；
图12为图9中连接过渡分区AA1的另一种局部放大图。
具体实施方式
为使本公开的上述目的、特征和优点能够更加明显易懂，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其它实施例，均属于本公开保护的范围。
正如背景技术所述，目前业内所谓的“全面屏”并非真正意义上的全面屏，而是“全面刘海屏”，将“刘海”消除是目前亟待解决的问题。在一种设想的方案中，要想将“刘海”消除，需要将屏幕正面的功能部件，例如摄像头，设置于屏幕正面的有效显示区内。请参见图1，示出了一种显示屏母板100，以该显示屏母板100为OLED(Organic Light-Emitting Diode，有机发光二极管)显示器件为例，其中2为蒸镀区，对应显示屏的有效显示区，需要在蒸镀区2中设置一通孔区3，将屏幕正面的功能部件(例如摄像头)设置于该通孔区3内，这就要求OLED发光器件所需要的EL(Electro Luminescence，电致发光)材料在蒸镀过程中不可以蒸镀在通孔区3内。
基于此，请参见图2，示出了一种蒸镀EL材料的掩膜版，其中4为金属框架，5为基板，6为开口，对应屏幕的有效显示区，也即蒸镀区2。为了不使EL材料蒸镀在有效显示区内，需要在开口6内将对应通孔区3的区域遮挡，即图2中所示出的遮挡区7。但是这就需要进行遮挡的部件悬空设置于开口6中，这种技术需求目前无法实现。
基于上述设想，如图3所示，本公开的实施例提出了一种掩膜版300，该掩膜版300包括：基板5、遮挡部8及连接部9。其中，基板5具有至少一个开口6，蒸镀时该开口6在待制作的显示屏的显示平面上的正投影与待制作的 显示屏的显示区重合；遮挡部8设置于开口6内部，蒸镀时遮挡部8在待制作的显示屏的显示平面上的正投影与待制作的显示屏中需进行遮挡的部件在显示平面上的正投影重合，例如，摄像头、听筒、传感器等功能部件；连接部9连接于遮挡部8与开口6的侧壁之间，用于支撑遮挡部8。
在本实施例所提供的掩膜版300中，通过在掩膜版300的开口6内部设置遮挡部8，并用连接部9将遮挡部8固定于开口6内。当采用上述掩膜版300进行蒸镀时，遮挡部8可将显示屏中需进行遮挡的部件(如摄像头、听筒、传感器等部件)进行遮挡，从而避免了蒸镀材料沉积在这些部件上，而这些部件的周围区域由于没有遮挡，因此能够正常进行膜层的蒸镀，从而这些部件周围的区域能够实现显示，提高了屏占比，实现了全面屏设计。
需要说明的是，本实施例所提供的掩膜版300适用于蒸镀OLED显示器件中发光器件的各功能膜层，例如，电子注入层、电子传输层、空穴注入层、空穴传输层、阴极层等，这些功能膜层所需要的蒸镀材料可统称为EL材料。在常规设计中，这些功能膜层通常为一整层的薄膜，因此可用本实施例中的掩膜版300进行蒸镀；本实施例中的掩膜版300称为Open Mask。
基于上述技术方案，如图4a～图4d所示，作为一种可选的方案，掩膜版300中的连接部9可具有网状结构，从而可减小连接部9的遮挡面积，蒸镀材料可透过连接部9网状结构的网眼蒸镀至连接部9对应的显示区上，实现了连接部9所对应的显示区内的正常显示，进一步提高了屏占比。
示例性的，如图4a所示，连接部9为一体结构且为轴对称结构，连接部9的对称轴L过遮挡部8的中心且垂直于连接部9所连接的开口6的边。连接部9与遮挡部8相连的一端的宽度d1小于或等于遮挡部8沿垂直于连接部9的对称轴L的方向上的最大宽度，且连接部9与开口6侧壁相连的一端d2的宽度大于连接部9与遮挡部8相连的一端d1的宽度。在这种结构中，连接部9为轴对称结构，且可视为类似梯形的形状，使得连接部9为遮挡部8所提供的支撑力比较对称，并且遮挡部8与开口6侧壁之间的连接比较稳固。
示例性的，如图4b所示，连接部9为一体结构且为轴对称结构，连接部9的对称轴L过遮挡部8的中心且垂直于连接部9所连接的开口6的边。连接 部9与遮挡部8相连的一端的宽度d1小于或等于遮挡部8沿垂直于连接部9的对称轴L的方向上的最大宽度，且连接部9与开口6侧壁相连的一端d2的宽度等于连接部9与遮挡部8相连的一端d1的宽度。在这种结构中，连接部9为轴对称结构，且可视为类似矩形的形状，使得连接部9为遮挡部8所提供的支撑力比较对称，并且连接部9对显示区的遮挡面积较小。
示例性的，如图4c所示，连接部9包括至少两个子连接部91、92，连接部9的对称轴L过遮挡部8的中心且垂直于连接部9所连接的开口6的边；连接部9所包括的全部子连接部(例如，子连接部91、92)相对于对称轴L对称布置。每个子连接部与开口6侧壁相连的一端的宽度d1大于子连接部与遮挡部8相连的一端的宽度d2。在这种结构中，全部子连接部9相对于对称轴L对称布置，且各子连接部9可视为类似梯形的形状，使得连接部9整体为遮挡部8所提供的支撑力比较对称，遮挡部8与开口6侧壁之间的连接比较稳固，并且连接部9整体对显示区的遮挡面积较小。
示例性的，如图4d所示，连接部9包括至少两个子连接部91、92，连接部9的对称轴L过遮挡部8的中心且垂直于连接部9所连接的开口6的边；连接部9所包括的全部子连接部(例如，子连接部91、92)相对于对称轴L对称布置。每个子连接部与开口6侧壁相连的一端的宽度d1等于子连接部与遮挡部8相连的一端的宽度d2。在这种结构中，全部子连接部9相对于对称轴L对称布置，且各子连接部9可视为类似矩形的形状，使得连接部9整体为遮挡部8所提供的支撑力比较对称，遮挡部8与开口6侧壁之间的连接比较稳固，并且连接部9整体对显示区的遮挡面积较小。
作为一种可能的设计，请参见图5a～图5c，连接部9的网状结构的每个网眼93在待制作的显示屏的显示平面上的正投影覆盖待制作的显示屏上相应区域的至少一个子像素，且网状结构的实体部分94在待制作的显示屏的显示平面上的正投影处于待制作的显示屏上相应区域的各子像素之间的间隙区域内。图5a～图5c中，分别示出了三种不同的子像素排列情况，针对每种子像素排列情况，可对连接部9的网状结构进行相应的设计。通过上述设计，可进一步减小连接部9对于显示区中子像素开口区域的遮挡，可提高连接部9 所对应的显示区域的显示效果。
若本实施例中的掩膜版300用于蒸镀显示屏中需要实现连接的膜层时，例如蒸镀阴极层时，由于连接部9具有网状结构，其各个网眼93之间内被实体部分94隔开，因此各个网眼中所蒸镀的阴极层可能会出现无法相互连通的情况。针对这一问题，如图6所示，可在连接部9的网状结构中相邻的两个网眼93之间的实体部分94中设置缺口95，使该缺口95贯通其所相邻的两个网眼93。通过这样的设计，在蒸镀阴极层时，阴极材料在沉积在网眼93中的同时，还会沉积在缺口95中，从而实现了各网眼93中阴极层的相互电连接。进一步的，还可在网状结构中位于边缘的网眼93与开口6之间的实体部分94中设置缺口，以实现网状结构的各网眼93与开口6之间的连通，这样的设计，在蒸镀时，透过网状结构所形成的蒸镀膜层能够与网状结构以外的区域中的膜层连通，从而实现整层膜层的电连接。
请再次参见图3，本实施例中，连接部9可与遮挡部8最靠近的开口6的侧壁相连接，以减少连接部9对显示区的遮挡面积。
在本实施例中，基板5、遮挡部8和连接部9可形成为一体结构，三者的材料可均为因瓦合金。
另外，在本实施例中，作为一种可能的设计，遮挡部8在显示平面上的正投影的形状与其所对应的需进行遮挡的部件在显示平面上的正投影的形状相同，遮挡部8在显示平面上的正投影的面积等于或略大于其所对应的需进行遮挡的部件在显示平面上的正投影的面积，这使得遮挡部8能够保证在蒸镀过程中对显示屏中需遮挡部件进行有效遮挡的同时，还能够尽量避免对显示屏中需遮挡部件周围区域造成遮挡。
需要说明的是，在本实施例中，每一开口6内所包含的遮挡部8及相应的连接部9的数量不限定为一个，二者的数量取决于显示屏中需进行遮挡的部件的数量。
另外，本实施例中的掩膜版300还可包括以金属框架4，用于支撑基板5，防止基板5发生形变。
基于上述掩膜版，本公开的实施例还提供了一种掩膜版的制作方法，该 制作方法包括如下步骤：
S1：提供基板。
在上述步骤S1中，所提供的基板可为一完整的基板，基板的材料可为因瓦合金或其它可用于制作掩膜版的材料。
S2：请再次参见图3，去除基板中的特定部分，以在基板上形成至少一个开口6、遮挡部8、及连接部9；其中，开口6在待制作的显示屏的显示平面上的正投影与待制作的显示屏的显示区重合，遮挡部8和连接部9位于开口6内部，遮挡部8在待制作的显示屏的显示平面上的正投影与待制作的显示屏中需进行遮挡的部件在显示平面上的正投影重合，连接部9连接于遮挡部8与开口6的侧壁之间。
在上述步骤S2中，“去除基板中的特定部分”可采用湿法刻蚀工艺，激光刻蚀工艺，或者湿法刻蚀工艺和激光刻蚀工艺的结合。
对于连接部9具有网状结构的技术方案：
作为一种可能的设计，上述步骤S2具体可包括：采用湿法刻蚀工艺或激光刻蚀工艺，去除基板中待形成开口6区域内除待形成遮挡部8及连接部9以外的区域的部分，并且在待形成连接部9区域内制作网眼，形成至少一个开口6、遮挡部8、及具有网状结构的连接部9。也就是说，可在同一道刻蚀工艺下形成开口6、遮挡部8、及具有网状结构的连接部9。
作为一种可能的设计，上述步骤S2具体可包括：首先，采用湿法刻蚀工艺，去除基板中待形成开口6区域内除待形成遮挡部8及连接部9以外的区域的部分，形成至少一个开口6、遮挡部8、及连接部9的雏形；然后，采用激光刻蚀工艺刻蚀连接部9的雏形，在连接部9的雏形中制作网眼，得到具有网状结构的连接部9。也就是说，可先用一道刻蚀工艺形成开口6、遮挡部8、及连接部9的雏形，再用一道刻蚀工艺形成连接部9的网状结构。
需要指出的是，采用激光刻蚀工艺刻蚀基板，具有刻蚀精准度高和精细度的优点。
对于图6所示出的连接部的网状结构的方案，网状结构中相邻的两个网眼93之间的实体部分94中具有缺口95，缺口95可采用激光打孔的方式制 作。
基于上述连接部具有网状结构的掩膜版，本公开的实施例还提供了一种蒸镀方法，请参见图7a～图7c，该蒸镀方法包括至少两次蒸镀，每次蒸镀时采用上述连接部具有网状结构的掩膜版，且每次蒸镀后进行下一次蒸镀前，将掩膜版沿设定方向移动设定距离。其中，所述设定方向和所述设定距离根据掩膜版中连接部的网状结构中网眼93的排列情况而定，以使完成所述至少两次蒸镀后，各网眼93中的蒸镀膜层(透过各网眼93所形成的蒸镀膜层)能够相互连通，且连接部所对应的区域内的膜层(透过连接部所形成的蒸镀膜层)能够与掩膜版的开口内除连接部及遮挡部以外的区域中的膜层连通，从而避免了仅进行一次蒸镀可能会带来的各网眼93中的蒸镀膜层不能相互连通的问题，保证了连接部所对应的显示区域的正常显示。
示例性的，请参见图7a，图中以网眼93排列的行方向为X方向，垂直于X方向的为Y方向，可进行两次蒸镀。在完成第一次蒸镀进行第二次蒸镀前，将掩膜版沿X方向平移一定的距离，使平移后各网眼93的位置对应平移前各网眼93之间的间隙，从而在进行第二次蒸镀后，同一行的蒸镀膜层中，第一次蒸镀的相邻两个网眼93中的蒸镀膜层之间通过第二次蒸镀的网眼93中的蒸镀膜层实现连通；并且每一行蒸镀膜层，与掩膜版的开口内除连接部及遮挡部以外的区域中的膜层(开口内除连接部及遮挡部以外的区域所形成的蒸镀膜层)连通，从而实现了所有网眼93中的蒸镀膜层之间的相互连通。
示例性的，请参见图7b，图中以网眼93排列的行方向为X方向，垂直于X方向的为Y方向，可进行两次蒸镀。在完成第一次蒸镀进行第二次蒸镀前，将掩膜版沿Y方向平移一定的距离，使平移后各网眼93的位置对应平移前各网眼93之间的间隙，从而在进行第二次蒸镀后，沿Y方向，第一次蒸镀的相邻两个网眼93中的蒸镀膜层之间通过第二次蒸镀的网眼93中的蒸镀膜层实现连通，从而实现了各网眼93中的蒸镀膜层之间的相互连通。
示例性的，请参见图7c，图中以网眼93排列的行方向为X方向，垂直于X方向的为Y方向，可进行两次蒸镀。在完成第一次蒸镀进行第二次蒸镀前，将掩膜版沿图示方向(X方向与Y方向之间的一个方向)平移一定的距 离，使平移后各网眼93的位置对应平移前各网眼93之间的间隙，从而在进行第二次蒸镀后，沿图示的掩膜板移动方向，第一次蒸镀的相邻两个网眼93中的蒸镀膜层之间通过第二次蒸镀的网眼93中的蒸镀膜层实现连通，从而实现了各网眼93中的蒸镀膜层之间的相互连通。
上述蒸镀方法适用于蒸镀显示屏中需要实现相互连通的膜层，如阴极层等。
此外，值的一提的是，要使各网眼93中的蒸镀膜层实现相互连通，也可采用图6所示出的掩膜版，即网状结构中相邻的两个网眼93之间的实体部分94中具有缺口95，这样在蒸镀时，蒸镀材料在沉积在网眼93中的同时，还会沉积在缺口95中，从而实现各网眼93中的蒸镀膜层、以及各网眼93中的蒸镀膜层与网状结构以外的蒸镀膜层之间的相互连通。
此外，要使各网眼93中的蒸镀膜层实现相互连通，也可采用网状结构中相邻的两个网眼93之间的实体部分94中不具有缺口95的掩膜版，如图5a～图5c所示出的网状结构，蒸镀时可直接利用蒸镀材料在网眼93边缘的扩散作用(业内称为Shadow)，使相邻的网眼93中的蒸镀膜层实现相互连通。
为了保证上述蒸镀方法所蒸镀的膜层的整体厚度符合该膜层的设计膜厚，可使每次所蒸镀的膜层厚度之和为该膜层的设计厚度，以保证显示屏的良率。示例性的，上述蒸镀方法可包括两次蒸镀，每次蒸镀的膜厚为该膜层的设计膜厚度的一半。
基于上述掩膜版，本实施例还提供了一种显示屏，如图9所示，该显示屏包括常规显示区AA及功能部件区BB。其中，功能部件区BB内设置有显示屏的功能部件，例如摄像头、听筒、传感器等，功能部件区BB的形状与其内部所设置的功能部件在显示平面上的正投影形状相同，且功能部件区BB的面积等于或略大于其内部所设置的功能部件在显示平面上的正投影面积；常规显示区AA内设置有子像素，可实现正常显示功能，常规显示区AA包围功能部件区BB，从而功能部件区B周围的区域能够正常显示。
上述显示屏可采用上述任一实施例中的掩膜版制作蒸镀膜层，其中，功能部件区BB为蒸镀过程中所述遮挡部8进行遮挡的区域，所述常规显示区 AA为蒸镀过程中透过所述开口6内区域所形成的蒸镀区域；上述显示屏能够实现功能部件区BB周围区域的正常显示，从而显示屏的屏占比较高，可实现“全面屏”设计。
在上述显示屏中，常规显示区AA对应掩膜版300的开口6区域，其可包括连接过渡分区AA1和非连接过渡分区AA2：非连接过渡分区AA2为主要的进行显示的区域；连接过渡分区AA1处于功能部件区BB与其所靠近的常规显示区AA的边之间，对应掩膜版300的连接部9。功能部件区BB对应掩膜版300的遮挡部8。
常规显示区AA内设有电极层，该电极层具体可为阴极层。
若制作上述显示屏所采用的掩膜版300为连接部9具有网状结构的掩膜版，则电极层在结构上存在如下特点：如图10和图11所示，电极层10包括层叠设置的至少两层子电极层，例如：图10和图11中所示出的子电极层101、102，在连接过渡分区AA1内，每层子电极层包括相互间隔的多个电极，同一层子电极层所包括的多个电极设置于与该子电极层相邻的子电极层中的多个电极之间的间隙，例如：图10和图11中示出了子电极层101中的多个电极设置于子电极层102中的多个电极之间的间隙，通过这样的结构设计使得连接过渡分区AA1内的各电极相互电连接。
作为一种可能的设计，子电极层101可为采用掩膜版300进行第一次蒸镀所形成的，其厚度记为x1；子电极层102可为采用掩膜版300进行第二次蒸镀所形成的，其厚度记为x2；x1+x2可以等于电极层10的整体设计厚度x，此外，x1与x2可以相等。从图11中可以看出，进行两次蒸镀后，处于连接过渡分区AA1内的电极层的厚度并非均匀的，其在某些区域的厚度为x1或x2，在某些区域的厚度为x。
若制作上述显示屏所采用的掩膜版300为连接部9具有网状结构的掩膜版，且连接部9的网状结构中相邻网眼93之间的实体部分94具有缺口95(可参见图6)，则直接采用该掩膜版进行一次性的蒸镀后，电极层在结构上存在如下特点：如图12所示，在连接过渡分区AA1内，电极层10包括相互间隔的多个电极103，相邻的电极103之间通过电极段104电连接，以使所述多个 电极103相互电连接。其中，所述多个电极103为电极材料透过掩膜版300的网眼93所形成的，电极段104为电极材料透过掩膜版300的实体部分94中的缺口95所形成的。
以上所述仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (16)

  1. 一种掩膜版，包括：
    基板，所述基板具有至少一个开口，所述开口在待制作的显示屏的显示平面上的正投影与所述待制作的显示屏的显示区重合；
    遮挡部，设置于所述开口内部，所述遮挡部在所述显示平面上的正投影与所述待制作的显示屏中需进行遮挡的部件在所述显示平面上的正投影重合；
    连接部，位于所述遮挡部和所述开口的侧壁之间，所述连接部用于连接所述遮挡部和所述开口的侧壁。
  2. 根据权利要求1所述的掩膜版，其中，所述连接部具有网状结构。
  3. 根据权利要求2所述的掩膜版，其中，所述网状结构的每个网眼在所述显示平面上的正投影覆盖所述待制作的显示屏上的至少一个子像素，且所述网状结构的实体部分在所述显示平面上的正投影处于所述待制作的显示屏上的子像素之间的间隙区域内。
  4. 根据权利要求3所述的掩膜版，其中，所述网状结构中相邻的两个网眼之间的实体部分具有贯通该相邻的两个网眼的缺口。
  5. 根据权利要求1-4任一项所述的掩膜版，其中，所述连接部为一体结构且为轴对称结构，所述连接部的对称轴经过所述遮挡部的中心且垂直于所述连接部所连接的开口侧壁；
    所述连接部与所述遮挡部相连的一端的宽度小于或等于所述遮挡部沿垂直于所述连接部的对称轴的方向上的最大宽度，所述连接部与所述开口侧壁相连的一端的宽度大于或等于所述连接部与所述遮挡部相连的一端的宽度。
  6. 根据权利要求1-4任一项所述的掩膜版，其中，所述连接部包括至少两个独立的子连接部且为轴对称结构，所述连接部的对称轴经过所述遮挡部的中心且垂直于所述连接部所连接的开口侧壁；所述至少两个子连接部相对于所述对称轴对称布置；
    每个所述子连接部与所述开口侧壁相连的一端的宽度大于或等于所述子连接部与所述遮挡部相连的一端的宽度。
  7. 根据权利要求1-4任一项所述的掩膜版，其中，所述连接部与最靠近所述遮挡部的开口侧壁相连接。
  8. 根据权利要求1-4任一项所述的掩膜版，其中，所述基板、所述遮挡部和所述连接部为一体结构。
  9. 根据权利要求1-4任一项所述的掩膜版，其中，所述遮挡部在所述显示平面上的正投影的形状与所述待制作的显示屏中需进行遮挡的部件在所述显示平面上的正投影的形状相同，所述遮挡部在所述显示平面上的正投影的面积等于或略大于所述待制作的显示屏中需进行遮挡的部件在所述显示平面上的正投影的面积。
  10. 一种掩膜版的制作方法，所述制作方法包括：
    提供基板；
    去除所述基板中的特定部分，以在所述基板上形成至少一个开口、并在所述开口内部形成遮挡部及连接部；
    其中，所述开口在待制作的显示屏的显示平面上的正投影与所述待制作的显示屏的显示区重合，所述遮挡部在所述显示平面上的正投影与所述待制作的显示屏中需进行遮挡的部件在所述显示平面上的正投影重合，所述连接部连接于所述遮挡部和所述开口的侧壁之间。
  11. 根据权利要求10所述的掩膜版的制作方法，其中，所述去除所述基板中的特定部分，以在所述基板上形成至少一个开口、并在所述开口内部形成遮挡部及连接部的步骤，包括：
    采用湿法刻蚀工艺或激光刻蚀工艺，去除所述基板中待形成开口区域内除待形成遮挡部及连接部以外的区域的部分，并且在待形成连接部区域内制作出网眼，以形成所述至少一个开口、所述遮挡部、及具有网状结构的所述连接部；或者，
    采用湿法刻蚀工艺，去除所述基板中待形成开口区域内除待形成遮挡部及连接部以外的区域的部分，形成所述至少一个开口、所述遮挡部、及所述连接部的雏形；
    采用激光刻蚀工艺刻蚀所述连接部的雏形，在所述连接部的雏形中制作 网眼，得到具有网状结构的连接部。
  12. 一种蒸镀方法，包括至少两次蒸镀，每次蒸镀时采用如权利要求2～4任一项所述的掩膜版，每次蒸镀后进行下一次蒸镀前，将所述掩膜版沿设定方向移动设定距离；其中，
    所述设定方向和所述设定距离根据所述掩膜版中连接部的网状结构中网眼的排列情况而定，以使完成所述至少两次蒸镀后，透过各网眼所形成的蒸镀膜层能够相互连通，且透过所述连接部所形成的蒸镀膜层能够与透过所述开口内除连接部及遮挡部以外的区域所形成的蒸镀膜层连通。
  13. 根据权利要求12所述的蒸镀方法，其中，所述至少两次蒸镀所蒸镀的膜层厚度之和为该膜层的设计厚度。
  14. 根据权利要求13所述的蒸镀方法，其中，所述蒸镀方法包括两次蒸镀，每次蒸镀的膜厚为该膜层的设计膜厚的一半。
  15. 一种显示屏，包括常规显示区及功能部件区；
    所述功能部件区内设置有所述显示屏的功能部件，所述功能部件区的形状与其内部所设置的功能部件在显示平面上的正投影形状相同，且所述功能部件区的面积等于或略大于其内部所设置的功能部件在显示平面上的正投影面积；
    所述常规显示区包围所述功能部件区。
  16. 根据权利要求15所述的显示屏，其中，所述常规显示区内设有电极层；
    所述常规显示区包括连接过渡分区，所述连接过渡分区处于所述功能部件区与其最靠近的常规显示区的边之间；
    所述电极层包括层叠设置的至少两层子电极层，在所述连接过渡分区内，每层所述子电极层包括相互间隔的多个电极，同一层子电极层中的多个电极设置于与该子电极层相邻的子电极层中的多个电极之间的间隙，以使所述连接过渡分区内的各电极相互电连接；或者，
    在所述连接过渡分区内，所述电极层包括相互间隔的多个电极，相邻的电极之间通过电极段电连接，以使所述多个电极相互电连接。
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US11355707B2 (en) 2022-06-07
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JP7437159B2 (ja) 2024-02-22
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