WO2019218536A1 - 掩膜板及掩膜组件 - Google Patents

掩膜板及掩膜组件 Download PDF

Info

Publication number
WO2019218536A1
WO2019218536A1 PCT/CN2018/103296 CN2018103296W WO2019218536A1 WO 2019218536 A1 WO2019218536 A1 WO 2019218536A1 CN 2018103296 W CN2018103296 W CN 2018103296W WO 2019218536 A1 WO2019218536 A1 WO 2019218536A1
Authority
WO
WIPO (PCT)
Prior art keywords
sub
mask
masks
groove
vapor deposition
Prior art date
Application number
PCT/CN2018/103296
Other languages
English (en)
French (fr)
Inventor
李金库
康梦华
王梦凡
Original Assignee
昆山国显光电有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 昆山国显光电有限公司 filed Critical 昆山国显光电有限公司
Priority to EP18918475.7A priority Critical patent/EP3623495A4/en
Priority to US16/331,987 priority patent/US20210355572A1/en
Priority to JP2019568386A priority patent/JP7029477B2/ja
Priority to KR1020207001822A priority patent/KR102257213B1/ko
Publication of WO2019218536A1 publication Critical patent/WO2019218536A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present application relates to the field of display technologies, and in particular, to a mask and a mask assembly.
  • OLED Organic Light-Emitting Diode
  • LCD liquid crystal display
  • a mask for vacuum evaporation is a vital component, and the mask can control the position where the organic material is deposited on the substrate.
  • the mask mainly includes a common metal mask (CMM) and a precision metal mask (FMM), the CMM is used for vapor deposition of a common layer, and the FMM is used for vapor deposition of a light-emitting layer.
  • CMM common metal mask
  • FMM precision metal mask
  • the inventors have found that in the process of manufacturing a special-shaped display screen (ie, a screen body that is slotted or perforated on one side of the display screen), wrinkles are likely to occur when the mask plate of the prior art is used to form a net, resulting in subsequent display.
  • the pixel pixel evaporation position accuracy is lowered.
  • the present application provides a mask and a mask assembly, which solves the problem of easy wrinkling when the mask is stretched, and improves the precision of the pixel evaporation position of the subsequent display screen.
  • the present application provides a mask.
  • the mask comprises: a mask body having a vapor deposition surface and a glass surface, the vapor deposition surface being adapted to face the evaporation source, the glass surface being adapted to face away from the evaporation source Providing at least one sub-mask disposed on the mask body, the sub-mask comprising an evaporation zone and a shielding portion; in the thickness direction of the sub-mask, the evaporation The region is provided with a first vapor deposition hole penetrating the sub-mask; the shielding portion includes an isolation region and a dummy region, the dummy region corresponding to the shaped region of the display screen, wherein the isolation region is located in the dummy region and Between the vapor deposition zones, in the thickness direction of the sub-mask, the dummy zone is provided with a second vapor deposition hole, the second vapor deposition hole penetrating through the sub-mask, and/or The dummy region is
  • the second vapor deposition hole has the same shape as the first vapor deposition hole.
  • the second vapor deposition hole includes a first half hole and a second half hole arranged and communicated along a thickness direction of the sub mask; wherein the first half hole Provided on the glass surface, the second half of the hole is disposed on the vapor deposition surface, and the first half of the hole is from one end of the mask body close to the glass surface to away from the glass surface One end gradually gathers, and the second half of the hole is gradually gathered from one end of the mask main body close to the vapor deposition surface to an end away from the vapor deposition surface and communicates with the first half of the hole.
  • the projection of the opening of the first half-hole in the thickness direction of the sub-mask is located in the opening of the second half-hole.
  • the first groove is disposed on the vapor deposition surface or the glass surface.
  • the first groove includes a second groove and a third groove
  • the second groove is disposed on the vapor deposition surface
  • the third groove is disposed on the glass surface
  • a distance (disconnected) between the bottom wall of the second groove and the bottom wall of the third groove is along the thickness direction of the sub-mask.
  • the cross-sectional shape of the first groove is polygonal, circular or elliptical.
  • the isolation region in the thickness direction of the sub-mask, is provided with at least one fourth groove, the fourth groove having a depth smaller than a thickness of the sub-mask.
  • the fourth groove is disposed on the vapor deposition surface or the glass surface.
  • the fourth groove includes a fifth groove and a sixth groove
  • the fifth groove is disposed on the vapor deposition surface
  • the sixth groove is disposed on the glass surface And a distance between a bottom wall of the fifth groove and a bottom wall of the sixth groove along a thickness direction of the sub-mask.
  • the depth of the fifth groove is greater than or equal to the depth of the sixth groove.
  • the fourth groove has a polygonal, circular or elliptical cross-sectional shape.
  • the mask body has a first centerline and a second centerline in a plan view, the first centerline being perpendicular to the second centerline; the mask body being Providing two sets of the sub-masks, each set of the sub-masks comprising at least one of the sub-masks, each adjacent one of the sub-masks having a spacing, two sets of the sub-masks
  • the mask is axially symmetric about the first centerline, and the two sets of the sub-masks are axisymmetric about the second centerline.
  • the obscuring portions of the sub-masks on the same side of the second centerline are disposed facing or facing the second centerline.
  • the mask body is provided with a plurality of sub-masks, and the plurality of sub-masks are arranged in a row or in an array;
  • the mask body has a virtual dividing line, and the virtual dividing line divides the plurality of sub-masks into two sets of sub-masks, and the two sets of sub-masks include: a first set of sub-masks on the side and a second set of sub-masks on the other side of the virtual dividing line; the first set of sub-masks and the second set of sub-masks each including at least a sub-mask;
  • Each of the sub-masks of the first group of sub-masks and the second set of sub-masks are respectively provided with the blocking portion on a side facing the virtual dividing line; or, the first group
  • the sub-masks and the sub-masks of the second set of sub-masks are respectively provided with the shielding portions on the side facing away from the virtual dividing line.
  • the virtual dividing line is a virtual straight line.
  • the mask body is provided with a plurality of sub-masks, and the plurality of sub-masks are arranged in a row or in an array;
  • each of the sub-group sub-masks are respectively provided with the shielding portion, and the opposite side is not provided with the shielding portion; or, each sub-group sub-mask
  • the shielding portions are not disposed on opposite sides of the two sub-masks of the diaphragm, and the shielding portions are respectively disposed on opposite sides.
  • the isolation region is a dummy line that matches the contour of the recess of the vapor deposition zone.
  • a mask assembly comprising a mask frame, a support strip and at least one mask according to any one of claims 1 to 19, the support strip being fixedly coupled to the mask frame, at least one The mask sheets are stacked on the support strip and fixedly connected to the mask frame.
  • the isolation region is a dummy line that matches the contour of the recess of the vapor deposition zone.
  • the mask and the mask assembly provided by the present application divide the shielding portion into two parts, wherein the dummy region is provided with a second vapor deposition hole and/or a first groove, and when the mask plate is used for evaporation, evaporation is performed.
  • the material may be evaporated from the first vapor deposition hole and the second vapor deposition hole onto the substrate, and the second vapor deposition hole and/or the first groove may be arranged to reduce the weight of the shielding portion and the shielding portion and the vapor deposition region.
  • the difference in weight is small, the stress concentration of the shielding portion is reduced, so that the mask body is evenly stressed during the web-forming process, and the wrinkle phenomenon of the mask body during the web-laying process is further reduced.
  • an isolation region is disposed between the dummy region and the vapor deposition region to facilitate cutting and packaging of the subsequently produced display screen.
  • FIG. 1 is a schematic structural view of a mask according to an embodiment of the present application.
  • FIG. 2 is a schematic structural view of a mask provided by another embodiment of the present application.
  • FIG. 3 is a schematic structural view of a mask provided by another embodiment of the present application.
  • FIG. 4 is a schematic structural view of a mask provided by another embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a mask provided by another embodiment of the present application.
  • FIG. 6 is a cross-sectional view showing a partial structure of a mask according to an embodiment of the present application.
  • FIG. 7 is a cross-sectional view showing a partial structure of a mask according to another embodiment of the present application.
  • FIG. 8 is a cross-sectional view showing a partial structure of a mask according to still another embodiment of the present application.
  • FIG. 9 is a cross-sectional view showing a partial structure of a mask according to still another embodiment of the present application.
  • FIG. 10 is a cross-sectional view showing a partial structure of a mask according to still another embodiment of the present application.
  • FIG. 11 is a cross-sectional view showing a partial structure of a mask according to still another embodiment of the present application.
  • FIG. 12 is a cross-sectional view showing a partial structure of a mask according to still another embodiment of the present application.
  • FIG. 13 is a cross-sectional view showing a partial structure of a mask according to still another embodiment of the present application.
  • FIG. 14 is a cross-sectional view showing a partial structure of a mask according to still another embodiment of the present application.
  • FIG. 15 is a schematic structural diagram of a mask assembly according to an embodiment of the present application.
  • the mask of the prior art is prone to the problem of wrinkles when the net is stretched.
  • the inventors have found that the root cause of such a problem is that the slotted screen body needs to be in the manufacturing process. Opening at the corresponding position, that is, there is a shielding portion on the mask plate, because the structure of the shielding portion and the vapor deposition region are largely different, for example, a vapor deposition hole is provided in the vapor deposition zone, and an evaporation hole is not provided in the shielding portion.
  • the difference between the weight of the shielding portion and the vapor deposition zone is large, and the stress is easily concentrated on the shielding portion. When the stress is concentrated in the shielding portion, the wrinkles are caused by the uneven force.
  • an embodiment of the present application provides a mask 100, including a mask body 10, and at least one sub-mask is disposed on the mask body 10.
  • the sub-mask 101 includes a vapor deposition zone 12 and a shielding portion 14.
  • the vapor deposition zone 12 is provided with a first vapor deposition hole 122 penetrating the sub-mask 101, and evaporation is performed.
  • the zone 12 is used to evaporate the display panel or display screen, that is, the size of the vapor deposition zone 12 is preferably exactly the same size as the display panel or display screen that needs to be evaporated.
  • the size of the evaporation zone 12 may be slightly larger than the size of the display panel or display screen that needs to be evaporated, so that other shielding structures may be added to the masking plate 100 to further reduce wrinkles.
  • the shielding portion 14 includes a dummy region 142 and an isolation region 144.
  • the shape and position of the dummy region 142 correspond to the shaped region of the shaped display screen (the shaped region is, for example, a slotted area or In the hole region).
  • the dummy region 142 is provided with a second vapor deposition hole 1422, and the second vapor deposition hole 1422 is inserted through the sub-mask.
  • Mask 101
  • the shielding portion 14 is divided into two parts, wherein the dummy region 142 is provided with a second vapor deposition hole 1422.
  • the evaporation material may be vaporized from the first vapor deposition hole 122 and the second vaporization hole 122.
  • the plating hole 1422 is vapor-deposited on the substrate, and the second vapor deposition hole 1422 is provided to reduce the weight of the shielding portion 14, and the difference in weight between the shielding portion 14 and the vapor deposition portion 12 is small, thereby reducing the stress concentration of the shielding portion 14.
  • the mask body 10 is evenly stressed during the web-forming process, further reducing the wrinkle phenomenon of the mask body 10 during the web-forming process; and an isolation region 144 is disposed between the dummy region 142 and the vapor-deposited region 12. In order to cut and package the subsequent display.
  • the shape of the mask main body 10 is not limited, and may be a regular rectangular parallelepiped shape or a circular shape. In other embodiments, other irregular shapes may also be selected, such as the mask main body 10.
  • the opposite two sides are straight lines, and the opposite two sides are curved and shaped.
  • the shape of the vapor deposition zone 12 is not limited, and may be a rectangle or a circle. When the vapor deposition zone 12 is rectangular, the recessed portion (for example, a portion surrounded by the shielding portion 14 in FIG. 1) is provided on one side or a plurality of sides of the vapor deposition zone 12.
  • the shape of the shielding portion 14 is also not limited, and may be an arc shielding portion 14 or a polygonal shielding portion 14.
  • the mask body 10 has two sets of sub-masks 101, and each set of sub-masks 101 includes at least one sub-mask 101 with a spacing between each adjacent two sub-masks 101.
  • the mask body 10 has a first centerline 11 and a second centerline 13, the first centerline 11 being perpendicular to the second centerline 13, preferably, the two sets of sub-masks 101 are each axially symmetric about the first centerline 11.
  • the two sets of sub-masks 101 are axisymmetric about the second centerline 13. It can be understood that, in FIGS. 1 to 3, a group (first group) of sub-masks 101 on the left side of the second center line 13 and another group on the right side of the second center line 13 (second Group) sub mask 101.
  • each of the sub-masks 101 in FIGS. 1 and 2 includes a sub-mask 101.
  • each set of sub-masks 101 includes four sub-masks 101 arranged in a horizontal row.
  • each set of sub-masks 101 may further include a sub-mask 101 disposed in an array (for example, not less than two rows and two columns).
  • the two sets of sub-masks 101 are disposed symmetrically about the first center line 11 and the second center line 13 , and the number of the shielding portions 14 on the two sides of the first center line 11 and the second center line 13 is the same.
  • the mask body 10 is evenly stressed on both sides of the first center line 11 and the second center line 13 when the net is stretched, further reducing the wrinkles at the position of the shielding portion 14, and the accuracy of the netting is improved, thereby also enabling subsequent display.
  • the pixel pixel evaporation position accuracy is high, and the display effect of the opening area (ie, the shaped area) of the subsequent display screen is also improved.
  • the mask The board main body 10 is provided with a row of sub-masks 101 in the lateral direction.
  • the center line of the left and right sides of the mask main body 10 in FIG. 1 is the first center line 11
  • the center line of the upper and lower sides is the second center.
  • the shielding portions 14 of the sub-mask 101 on the same side of the second center line 13 are disposed facing away from the second center line 13, or it can be said that each sub-mask located on the same side of the second center line 13
  • the shielding portions 14 on the 101 are disposed on the side of each of the sub-mask sheets 101 away from the second center line 13.
  • a mask sub-mask 101 is laterally disposed on the mask body 10, and the first center is connected to the center of the left and right sides of the mask main body 10 in FIG.
  • the shielding portions 14 of the sub-mask 101 on the same side of the second center line 13 are disposed facing the second center line 13, or it can be said that The shielding portions 14 on the respective sub-masks 101 on the same side of the two center lines 13 are disposed on the side of each of the sub-mask sheets 101 close to the second center line 13.
  • a mask sub-mask 101 is laterally disposed on the mask main body 10, and the first center is connected to the center of the left and right sides of the mask main body 10 in FIG.
  • the group of sub-masks 101 on the same side of the second center line 13 may be configured to include at least one sub-group mask 101, each sub-group
  • the sub-masks 101 respectively include two adjacent sub-masks 101, and the shielding portions 14 of the two sub-masks 101 of each sub-group sub-mask 101 are preferably disposed opposite each other.
  • a plurality of rows of masks 101 are arranged in an array on the mask body 10, that is, a plurality of sub-masks 101 are formed in multiple (horizontal) rows (longitudinal).
  • the plurality of sub-masks 101 of each row of sub-masks 101 are arranged substantially uniformly in the left-right direction, and the interval between each adjacent two rows of sub-masks 101 is substantially uniform.
  • the shielding portions 14 of the sub-mask 101 are each disposed facing the second center line 13.
  • the shielding portion 14 of the sub-mask 101 on the same side of the second center line 13 can also be disposed to face away from the second center line 13, so that the amount of web sag can be reduced to further improve The net folds.
  • the sub-mask 101 in the same side of the second center line 13 in each row may be disposed to include at least one sub-group sub-mask 101, and each sub-group sub-mask 101 includes adjacent The two sub-masks 101 are disposed opposite to the shielding portions 14 of the two sub-masks 101 of each sub-group sub-mask 101.
  • the two sets of sub-masks 101 may be symmetric only with respect to one of the center lines. It is assumed that when the line connecting the centers of the left and right sides of the mask main body 10 in FIG. 5 is the first center line 11 (not shown in FIG. 5), the line connecting the centers of the upper and lower sides is the second center line 13 (FIG. 5). When not shown in the middle, at this time, the two sets of sub-masks 101 are only axisymmetric with respect to the first center line 11, and are not axisymmetric with respect to the second center line 13. In another embodiment, the two sets of sub-masks 101 may also be axisymmetric only about the second centerline 13 and not axisymmetric about the first centerline 11.
  • the total number of sub-masks 101 may be selected to be an odd number, in which case the sub-mask 101 is only symmetrical about one of the first center line and the second center line, and about the other The centerline is asymmetrical.
  • two sets of sub-masks 101 may also be disposed asymmetrically with respect to the first center line 11 and the second center line 13.
  • the isolation region 144 may be a dummy line that matches the contour of the recess portion of the vapor deposition zone 12, and then the dummy portion 142 may occupy the entire shield portion 14.
  • the isolation region 144 occupies a portion of the shield portion 14, i.e., the isolation region 144 is no longer merely a dummy line that matches the contour of the vapor deposition zone 12, but rather an actual isolation region.
  • the ratio of the isolation region 144 occupying the shielding portion 14 is not limited, as long as the range of the cutting region corresponding to the isolation region 122 in the finally obtained display screen is ensured, and the cutting and packaging margin required for cutting can be satisfied.
  • the boundary line between the isolation region 144 and the vapor deposition zone 12 is theoretically a cutting boundary line when the display screen is cut to form a deformed region.
  • the isolation region 144 occupies a portion of the shielding portion 14
  • no vapor deposition material is vapor-deposited onto the substrate at a position corresponding to the isolation region 144 of the substrate, and after the evaporation is performed, the mask and the mask 100 are displayed on the display panel.
  • the position corresponding to the isolation region 144 can be cut and packaged (ie, the portion of the display corresponding to the dummy region 142 is cut off), since the corresponding isolation region 144 does not have the evaporation material, it will not cause water and oxygen invasion, and later The packaging effect is good.
  • the first vapor deposition hole 122 and the second vapor deposition hole 1422 have substantially the same shape, and when the first vapor deposition hole 122 and the second vapor deposition hole 1422 are plural,
  • the arrangement of the second vapor deposition holes 1422 in the dummy region 142 and the arrangement of the first vapor deposition holes 122 in the vapor deposition zone 12 are preferably the same, that is, the isolation region 144 is removed, and the dummy region 142 and the vapor deposition region 12 are removed.
  • the plurality of first vapor deposition holes 122 and the plurality of second vapor deposition holes 1422 are disposed on the whole with a space therebetween.
  • the arrangement is the arrangement of the second vapor deposition holes 1422 in the dummy region 142 in the first direction and/or the second direction, and the row of the first vapor deposition holes 122 in the vapor deposition zone 12.
  • the cloth is roughly the same.
  • the first vapor deposition holes 122 are arranged in rows in the vapor deposition zone 12
  • the second vapor deposition holes 1422 are extensions of the first vapor deposition holes 122 arranged in rows, and each adjacent two second steams on each row
  • the spacing between the plating holes 1422 is the same as the spacing between each adjacent two first vapor deposition holes 122 on each row; meanwhile, the first vapor deposition holes 122 are arranged in columns in the vapor deposition zone 12, and each column is provided.
  • the spacing between adjacent two second vapor deposition holes 1422 is the same as the spacing between each adjacent two first vapor deposition holes 122 on each column.
  • the shape and arrangement of the first vapor deposition hole 122 and the second vapor deposition hole 1422 may be different, and may be set according to actual needs, which is not limited herein.
  • the spacing between each adjacent two second vapor deposition holes 1422 on each row may be set to be different from the spacing between each adjacent two first vapor deposition holes 122 on each row, or each phase on each column may be set.
  • the spacing between the adjacent two second vapor deposition holes 1422 is different from the spacing between each adjacent two first vapor deposition holes 122 on each column.
  • the number of the first vapor deposition holes 122 and the second vapor deposition holes 1422 on one sub-mask 101 may be one.
  • the first vapor deposition hole 122 includes a first half-hole 1222 and a second half-hole 1224 disposed along the thickness direction of the vapor deposition zone 12, and the second vapor-deposited hole 1422 also includes a dummy
  • the first half-hole 1222 and the second half-hole 1224, which are disposed in the thickness direction of the region 142, are formed by two semi-etching from the glass surface 16 and the vapor deposition surface 18, respectively, to ensure formation.
  • the edge of the vapor-deposited hole is smoother, so that the evaporation effect of the subsequent organic material is better.
  • first-plate hole 1222 The shape of the longitudinal section of the second half of the hole 1224 may be the same.
  • the first half of the hole 1222 is disposed on the glass surface 16 of the mask body 10, and the second half of the hole 1224 is disposed on the vapor deposition surface 18 of the mask body 10, wherein the glass surface 18 is the mask body 10.
  • the surface of the vapor deposition surface 18 is away from the surface of the mask body 10 near the evaporation source, and the first half of the hole 1222 is gradually gathered from the end near the glass surface 16 to the end away from the glass surface 16, and the second half
  • the hole 1224 is gradually gathered from one end near the vapor deposition surface 18 to an end away from the vapor deposition surface 18, and finally the first half hole 1222 and the second half hole 1224 are at a substantially central position in the thickness direction of the mask body 10. Connected.
  • the opening of the second half of the hole 1224 covers the opening of the first half of the hole 1222 (ie, the first half of the hole 1222 is opposed to the glass)
  • the opening of the face 16 is sized to ensure that the vapor deposition material entering the first vapor deposition hole 122 from the first half of the hole 1224 can fill the first half of the hole 1222. That is, the projection of the opening of the first half of the hole 1222 in the thickness direction of the sub-mask 101 (also the thickness direction of the mask body 10) may be completely located in the opening of the second half of the hole 1224.
  • the cross-sectional shape of the first half-hole 1222 and the second half-hole 1224 (the cross-sectional shape perpendicular to the plane of the paper) is rectangular, but in other embodiments, the first half The cross-sectional shape of the engraved hole 1222 and the second semi-engraved hole 1224 may be selected to be circular or elliptical.
  • the dummy region 142 in the thickness direction of the sub-mask 101, is provided with at least one first recess 1421, and the depth of the first recess 1421 is smaller than the sub-mask 101. thickness of.
  • the shielding portion 14 is divided into two parts, wherein the dummy area 142 is provided with the first groove 1421, the first groove 1421 is disposed to reduce the weight of the shielding portion 14 so that the shielding portion 14 and the vapor deposition portion 12 are The difference in weight is small, the stress concentration of the shielding portion 14 is reduced, so that the mask body 10 is evenly stressed during the web-forming process, further reducing the wrinkle phenomenon of the mask main body 10 during the web-laying process;
  • An isolation region 144 is disposed between the 142 and the vapor deposition zone 12 to facilitate cutting and packaging of the subsequently produced display screen.
  • the first recess 1421 can be opened in the dummy area 142 in one of three ways:
  • the first recess 1421 is only opened on the glass surface 16 of the dummy area 142 (see FIG. 7);
  • the first recess 1421 is only opened in the vapor deposition surface 18 of the dummy region 142 (see FIG. 8);
  • the first recess 1421 is simultaneously opened in the vapor deposition surface 18 and the glass surface 16 of the dummy region 142 (see FIG. 9).
  • the first recess 1421 is formed on the vapor deposition surface of the dummy region 142, that is, the first recess 1421 is opened only on the vapor deposition surface of the dummy region 142. In other embodiments, the first recess 1421 may also be opened only on the glass surface of the dummy region 142 (see FIG. 7).
  • the number of the first grooves 1421 of the vapor deposition surface 18 opened in the dummy region 142 is one, and the first groove 1421 is opened on the vapor deposition surface of the dummy region 142 in a half-face manner.
  • the first recess 1421 may be disposed to cover the entire area of the vapor deposition surface of the dummy region 142, or the first recess 1421 may be disposed to cover most of the vapor deposition surface of the dummy region 142, and the first recess
  • the cross-sectional shape of the groove 1421 may be a polygon such as a triangle, a rectangle or a pentagon, or a circular or elliptical shape.
  • the bottom wall of the first recess 1421 and the vapor deposition surface of the dummy portion 142 of the shielding portion 14 are exactly the same size.
  • the bottom wall of the groove 1421 may serve as a vapor deposition surface of the shielding portion 14.
  • the number of the first grooves 1421 of the vapor deposition surface 18 of the dummy region 142 is at least two, and there is a spacing between each adjacent two first grooves 1421, the at least two A groove 1421 may be formed in the vapor deposition surface 18 of the dummy region 142 in a strip shape or a half shape.
  • the cross-sectional shape of the first groove 1421 is elongated; when the first groove 1421 adopts a point-like half-cut, the cross-sectional shape of the first groove 1421 is Round or oval.
  • the long side of the strip of the cross section of the first groove 1421 extends in the direction of the long side of the mask body 10 to further reduce the mask.
  • the web of the panel 100 is wrinkled.
  • the first recess 1421 is simultaneously opened on the vapor deposition surface 18 of the dummy region 142 and the glass surface 16 of the dummy region 142, that is, the vapor deposition surface 18 and the dummy region 142 in the dummy region 142.
  • the glass faces 16 are each provided with a first recess 1421.
  • the first recess 1421 is formed in the vapor deposition surface 18 of the dummy region 142 and the glass surface 18 of the dummy region 142. Compared with the first recess 1421 in the above embodiment, the vapor deposition is only performed in the dummy region 142.
  • the first groove 1421 includes a second groove having a bottom wall and a third groove having a bottom wall, the second groove is formed on the vapor deposition surface of the dummy region 142, and the third groove is opened in the dummy region 142.
  • the glass surface, the second groove and the third groove are disposed apart from each other in the thickness direction of the dummy region 142, that is, there is a space between the bottom wall of the second groove and the bottom wall of the third groove to ensure any one The second groove and any one of the third grooves do not exist in the thickness direction of the dummy region 142, thereby preventing the pixel from being vapor-deposited onto the substrate through the first groove.
  • the depths of the second groove and the third groove along the thickness direction of the dummy region 142 may be the same or different, and the cross-sectional shapes of the second groove and the third groove may be the same or different.
  • the depth of the second groove is greater than the depth of the third groove, or the depth of the second groove is equal to the depth of the third groove, or the depth of the second groove is less than the depth of the third groove.
  • the depth of the second groove and the third groove may both be half of the thickness of the sub-mask 101, or the depths of the second groove and the third groove are both greater than half the thickness of the sub-mask 101.
  • the number of the second groove and the third groove may be one.
  • the second groove has a first projection (projection in the thickness direction) facing the plane of the sub-mask 101
  • the third groove has a second projection (projection in the thickness direction) toward the plane of the sub-mask 101,
  • a projection and the second projection at least partially overlap, and a sum of depths of the second recess and the third recess along the thickness direction of the dummy region 142 is smaller than a thickness of the dummy region 142.
  • the second groove may cover most or all of the vapor deposition surface 18 of the dummy region 142
  • the third groove may cover most or all of the glass surface 16 of the dummy region 142, the first projection and The second projections completely overlap. It can be understood that in other embodiments, the first projection and the second projection may not completely overlap, for example, only partial overlap may be adopted.
  • the number of the second groove and the third groove may both be at least two.
  • each of the second grooves has a first projection toward a plane of the sub-mask 101
  • each of the third grooves has a second projection toward a plane of the sub-mask 101
  • the first projection and the second projection are at least partially The overlap, the sum of the depths of the second groove and the third groove along the thickness direction of the dummy region 142 is smaller than the thickness of the dummy region 142.
  • the first projection and the second projection may completely overlap. It can be understood that in other embodiments, the first projection and the second projection may not completely overlap, and only a partial overlap may be adopted.
  • the number of the second groove and the third groove may be the same or different, such as two for the second groove, two for the third groove, or the number of the second groove.
  • the number of third grooves is three.
  • the number of the second groove and the third groove may be one.
  • the second groove has a first projection toward the plane of the sub-mask 101
  • the third groove has a second projection toward the plane of the sub-mask 101
  • the first projection and the second projection are disposed not overlapping each other.
  • the first projection and the second projection are respectively a plurality of, and the first projection and the second projection are alternately arranged, that is, the second recess and the third recess are offset from each other in a plane where the sub-mask 101 is located.
  • the first projections and the second projections are preferably not coincident and separated from each other.
  • the sum of the depths of the adjacent second recesses and the third recesses may be set to be larger than the thickness of the dummy regions 142, so that the setting does not cause the dummy regions.
  • the fact that 142 penetrates in the thickness direction does not affect the subsequent vapor deposition.
  • the number of the second groove and the third groove may be at least two, the second groove has a first projection toward the plane of the dummy region 142, and the third groove faces the plane of the dummy region 142. Having a second projection, the first projection and the second projection are offset from each other, and each of the first projections and the second projections preferably do not coincide and are separated from each other. In this case, the depths of the adjacent second and third grooves may also be set. The sum is greater than the thickness of the dummy region 142. Such a setting does not cause the dummy region 142 to penetrate in the thickness direction, and thus does not affect the subsequent evaporation.
  • the second vapor deposition hole 1422 and the first groove 1421 may be simultaneously opened in the dummy region 142.
  • the second vapor deposition holes 1422 are spaced apart from the first recesses 1421 on the dummy regions 142.
  • a first recess 1421 is disposed between each adjacent two second vapor deposition holes 1422, and each adjacent A second vapor deposition hole 1422 is disposed between the two first grooves 1421.
  • At least one fourth groove 1442 is disposed in the thickness direction of the isolation region 144 of the shielding portion 14, a single concave portion.
  • the depth of the groove 1422 is smaller than the thickness of the sub-mask 101. Due to the presence of the fourth recess 1442, the thickness of the isolation region 144 is reduced, thus further reducing the weight of the shielding portion 14, and the difference in weight between the shielding portion 14 and the vapor deposition region 12 is reduced, further reducing the shielding portion 14.
  • the stress is concentrated, so that the mask body 10 is evenly stressed during the web laying process, and the wrinkle phenomenon of the mask body 10 during the web process is reduced.
  • the fourth recess 1442 can be opened in the isolation region 142 in one of three ways:
  • the fourth recess 1442 is only opened in the evaporation surface 18 of the isolation region 142;
  • the fourth recess 1442 is only opened in the glass surface 16 of the isolation region 142;
  • the fourth recess 1442 is simultaneously opened on the vapor deposition surface 18 and the glass surface 16 of the isolation region 142.
  • the vapor deposition surface of the isolation region 142 is a part of the vapor deposition surface 18 of the mask body 10, and the glass surface of the isolation region 142 is a portion of the glass surface 16 of the mask body 10.
  • the fourth recess 1442 is defined in the glass surface 16 of the isolation region 144 , that is, the fourth recess 1442 is opened only on the glass surface 16 of the isolation region 144 .
  • the number of the fourth recesses 1442 of the vapor deposition surface of the isolation region 144 is one, and the fourth recess 1442 is opened to the glass surface of the isolation region 144 by a full face and a half.
  • the number of the fourth grooves 1442 of the glass surface of the isolation region 144 may be at least two, and there is a spacing between each adjacent two fourth grooves 1442, and at least two fourth grooves.
  • the 1442 is opened in a strip-shaped half-point or a point-like half-cut manner on the glass surface 16 of the isolation region 144.
  • the fourth recess 1442 is formed in the vapor deposition surface 18 of the isolation region 144 , that is, the fourth recess 1442 is opened only on the vapor deposition surface of the isolation region 144 .
  • the number of the fourth recesses 1442 of the vapor deposition surface 18 of the isolation region 144 is one, and the fourth recess 1442 is opened to the vapor deposition surface 144 of the isolation region 144 by a full face and a half.
  • the fourth recess 1442 may be disposed to cover the entire area of the vapor deposition surface 18 of the isolation region 144, and the fourth recess 1442 may be disposed to cover most of the vapor deposition surface 18 of the isolation region 144, and
  • the cross-sectional shape of the four grooves 1442 may be a polygon such as a triangle, a rectangle or a pentagon, and may also be a circle or an ellipse.
  • the bottom wall of the fourth recess 1422 may be exactly the same size as the vapor deposition surface of the isolation region 144, and the fourth recess The bottom wall of 1422 can serve as a vapor deposition surface for isolation zone 144.
  • the number of the fourth grooves 1442 of the vapor deposition surface 18 of the isolation region 144 may be at least two, and there is a spacing between each adjacent two fourth grooves 1442, the at least two The fourth recess 1442 can be opened on the vapor deposition surface 18 of the isolation region 144 in a strip shape or a half-cut manner.
  • the cross-sectional shape of the fourth groove 1442 is elongated; when the fourth groove 1442 is in the shape of a dot, the cross-sectional shape of the fourth groove 1442 is a circle. Shape or oval.
  • the fourth groove 1442 is strip-shaped, the long side of the strip of the cross section of the fourth groove 1442 extends in the direction of the long side of the mask body 10 to further reduce the mask.
  • the web of the panel 100 is wrinkled.
  • the fourth recess 1442 is simultaneously opened on the vapor deposition surface 18 and the glass surface 16 of the isolation region 144, that is, the vapor deposition surface 18 and the glass surface 16 of the isolation region 144 are both opened.
  • the vapor deposition surface 18 of the isolation region 144 and the glass surface 16 of the isolation region 144 are both provided with a fourth recess 1442 compared to the steaming in the above embodiment, such as when the fourth recess 1442 is opened only in the isolation region 144.
  • the hardness of the vapor deposition surface or the glass surface on which the fourth groove 1442 is opened will be smaller than the hardness of the glass surface or the distillation surface without the fourth groove, at this time
  • the influence of the mask on the hardness of the mask 100 itself is further reduced, thereby further reducing the wrinkles.
  • the fourth groove 1442 includes a fifth groove having a bottom wall and a sixth groove having a bottom wall, the fifth groove is formed in the vapor deposition surface 18 of the isolation region 144, and the sixth groove is opened in the isolation region.
  • the glass surface 16 of the 144, the fifth groove and the sixth groove are preferably spaced apart from each other in the thickness direction of the isolation region 144, that is, there is a gap between the bottom wall of the fifth groove and the bottom wall of the sixth groove. In order to ensure that there is no mutual communication between any of the fifth recesses and any one of the sixth recesses in the thickness direction of the isolation region 144, thereby avoiding the occurrence of the pixel being deposited on the substrate in the isolation region 144.
  • the depths of the fifth groove and the sixth groove in the thickness direction of the isolation region 144 may be the same or different, and the cross-sectional shapes of the fifth groove and the sixth groove may be the same or different.
  • the depth of the fifth groove is greater than the depth of the sixth groove, or the depth of the fifth groove is equal to the depth of the sixth groove, or the depth of the fifth groove is less than the depth of the sixth groove.
  • the depth of the fifth groove and the sixth groove may both be half of the thickness of the sub-mask 101, or the depths of the fifth groove and the sixth groove are both greater than half the thickness of the sub-mask 101.
  • the number of the fifth groove and the sixth groove may be one.
  • the fifth groove has a first projection toward a plane of the isolation region 144
  • the sixth groove has a second projection toward a plane of the isolation region 144, the first projection and the second projection at least partially overlapping, the fifth groove
  • the sum of the depths of the sixth groove in the thickness direction of the isolation region 144 is smaller than the thickness of the isolation region 144.
  • the fifth recess may cover most or all of the evaporation surface 18 of the isolation region 144
  • the sixth recess may cover most or all of the glass surface 16 of the isolation region 144, the first projection and The second projections completely overlap. It can be understood that in other embodiments, the first projection and the second projection may not completely overlap, for example, a manner of only partially overlapping may be adopted.
  • the number of the fifth groove and the sixth groove may be both at least two.
  • each of the fifth grooves has a third projection (projection in the thickness direction) facing the plane of the isolation region 144
  • each of the sixth grooves has a fourth projection (projection in the thickness direction) toward the plane of the isolation region 144
  • the three projections and the fourth projection at least partially overlap, and the sum of the depths of the fifth recess and the sixth recess in the thickness direction of the isolation region 144 is smaller than the thickness of the isolation region 144.
  • the third projection and the fourth projection may completely overlap. It can be understood that in other embodiments, the third projection and the fourth projection may not completely overlap, and only a partial overlap may be adopted.
  • the number of the fifth groove and the sixth groove may be the same or different, for example, the number of the fifth grooves is two, and the number of the sixth grooves is also two, or the number of the fifth grooves. For two, the number of sixth grooves is three.
  • the number of the fifth groove and the sixth groove may be one.
  • the fifth groove has a third projection toward the plane of the isolation region 144
  • the sixth groove has a fourth projection toward the plane of the isolation region 144
  • the third projection is disposed not overlapping the fourth projection.
  • the third projection and the fourth projection are respectively a plurality, and the third projection and the fourth projection are alternately arranged. That is, the fifth groove and the sixth groove are offset from each other on the plane where the isolation region 144 is located, and each of the third projection and the fourth projection are preferably not coincident and separated from each other. The sum of the depths of the six grooves is larger than the thickness of the isolation region 144. Such a setting does not cause the isolation region 144 to penetrate in the thickness direction, and thus does not affect the subsequent evaporation.
  • the number of the fifth groove and the sixth groove may be at least two, the fifth groove has a first projection toward the plane of the isolation region 144, and the sixth groove faces the plane of the isolation region 144. Having a second projection, the first projection and the second projection are offset from each other, and each of the third projections and the fourth projections preferably do not coincide and are separated from each other. In this case, the depths of the adjacent fifth and sixth grooves may also be set. The sum is greater than the thickness of the isolation region 144. Such a setting does not cause the isolation region 144 to penetrate in the thickness direction, and thus does not affect the subsequent evaporation.
  • a third vapor deposition hole may be disposed in the isolation region 144; or a third vapor deposition hole and a fourth recess 1442 may be simultaneously disposed in the isolation region 144, and preferably, the third vapor deposition hole and the first
  • the four grooves 1442 are spaced apart on the isolation region 144.
  • a fourth groove 1442 is disposed between each adjacent two third vapor deposition holes, and a space is disposed between each adjacent two fourth grooves 1442. The fourth vapor deposition hole.
  • the shielding portion 14 is divided into two parts, wherein the dummy region 142 is provided with a second vapor deposition hole 1422 or a first groove 1421, and when the mask plate 100 is used for evaporation, steaming
  • the plating material may be evaporated from the first vapor deposition hole 122 and the second vapor deposition hole 1422 onto the substrate, and the second vapor deposition hole 1422 or the first groove 1421 may be disposed to reduce the weight of the shielding portion 14 so that the shielding portion 14 is shielded.
  • the difference in weight from the vapor deposition zone 12 is small, the stress concentration of the shielding portion 14 is lowered, so that the mask body 10 is uniformly stressed during the web laying process, and the wrinkles of the mask main body 10 during the web stretching process are further reduced. Phenomenon; at the same time, an isolation region 144 is disposed between the dummy region 142 and the evaporation region 12 to facilitate cutting and packaging of the subsequently produced display screen.
  • an embodiment of the present application further provides a mask assembly including a mask frame 20 , a support strip 30 , and at least one of the mask panels 100 described above.
  • the mask panel 100 includes a mask body 10 .
  • At least one sub-mask 101 is disposed on the mask body 10.
  • the support strips 30 are fixedly coupled to the mask frame 20, and at least one of the mask sheets 100 is laminated on the support strips 30 and fixedly coupled to the mask frame 30.
  • the vapor deposition surface of the mask 100 faces the evaporation source, the glass surface of the mask 100 faces the substrate, and the support strip 30 is located on the vapor deposition surface of the mask 100 to prevent the mask.
  • the 100 sag during the evaporation process further reduces the wrinkling of the mask 100 during the web.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种掩膜板及掩膜组件，掩膜板（100）包括掩膜板主体（10）；设置于掩膜板主体上的至少一个子掩膜板（101），子掩膜板包括蒸镀区（12）和遮挡部（14）；在子掩膜板的厚度方向上，蒸镀区设置有贯穿子掩膜板的第一蒸镀孔（122）；遮挡部包括隔离区（144）和虚设区（142），虚设区与显示屏的异形区对应，隔离区位于虚设区与蒸镀区之间，在子掩膜板的厚度方向上，虚设区设置有第二蒸镀孔（1422），第二蒸镀孔贯穿子掩膜板，和/或虚设区开设有至少一个第一凹槽（1421），第一凹槽的深度小于子掩膜板的厚度。如此，降低了遮挡部的应力集中，从而使掩膜板主体在张网过程中受力均匀，进一步降低了掩膜板主体在张网过程中的褶皱现象。

Description

掩膜板及掩膜组件 技术领域
本申请涉及显示技术领域，特别是涉及一种掩膜板及掩膜组件。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED)又称为有机电激光显示或有机发光半导体。OLED具有驱动电压低、主动发光、视角宽、效率高、响应速度快、易实现全彩色大面积壁挂式显示和柔性显示的许多特点而逐渐取代液晶显示器(Liquid Crystal Display，LCD)显示。
在OLED制造技术中，真空蒸镀用的掩膜板是至关重要的部件，掩膜板可以控制有机材料沉积在基板上的位置。掩膜板主要包括通用金属掩膜板(Common Metal Mask，CMM)及精密金属掩膜板(Fine Metal Mask，FMM)，CMM用于蒸镀共通层，FMM用于蒸镀发光层。
发明人发现，在异形显示屏(即在显示屏的一个侧边开槽或打孔的屏体)的制作过程中，采用现有技术中的掩膜板张网时容易出现褶皱，导致后续显示屏像素蒸镀位置精度降低。
发明内容
基于此，本申请提供了一种掩膜板及掩膜组件，解决了掩膜板张网时易褶皱的问题，提高了后续显示屏像素蒸镀位置的精度。
为实现以上目的，本申请提供了一种掩膜板。该掩膜板包括：掩膜板主体，所述掩膜板主体具有蒸镀面和玻璃面，所述蒸镀面适于面向蒸镀源地设置，所述玻璃面适于背向蒸镀源地设置；设置于所述掩膜板主体上的至少一个子掩膜板，所述子掩膜板包括蒸镀区和遮挡部；在所述子掩膜板的厚度方向上，所述蒸镀区设置有贯穿所述子掩膜板的第一蒸镀孔；所述遮挡部包括隔离区和虚设区，所述虚设区与显示屏的异形区对应，所述隔离区位于所述虚设区与所述蒸镀区之间，在所述子掩膜板的厚度方向上，所述虚设区设置有第二蒸镀孔，所述第二蒸镀孔贯穿所述子掩膜板，和/或所述虚设区开设有至少一个第一凹槽，所述第一凹槽的深度小于所述子掩膜板的厚度。
在其中一个实施例中，所述第二蒸镀孔与所述第一蒸镀孔的形状相同。
在其中一个实施例中，所述第二蒸镀孔包括沿所述子掩膜板的厚度方向设置且连通的第一半刻孔与第二半刻孔；其中，所述第一半刻孔设置于所述玻璃面，所述第二半刻孔设置于所述蒸镀面，所述第一半刻孔从所述掩膜板主体靠近所述玻璃面的一端到远离所述玻璃面的一端逐渐收拢，所述第二半刻孔从所述掩膜板主体靠近所述蒸镀面的一端到远离所述蒸镀面的一端逐渐收拢且与所述第一半刻孔连通。
在其中一个实施例中，所述第一半刻孔的开口沿子掩膜板的厚度方向上的投影位于第二半刻孔的开口中。
在其中一个实施例中，所述第一凹槽设置于所述蒸镀面或所述玻璃面。
在其中一个实施例中，所述第一凹槽包括第二凹槽与第三凹槽，所述第二凹槽设置于所述蒸镀面，所述第三凹槽设置于所述玻璃面，沿所述子掩膜板的厚度方向上，所述第二凹槽的底壁与所述第三凹槽的底壁之间具有间距(不连通)。
在其中一个实施例中，所述第一凹槽的横截面形状为多边形、圆形或椭圆形。
在其中一个实施例中，在所述子掩膜板的厚度方向上，所述隔离区开设有至少一个第四凹槽，所述第四凹槽的深度小于所述子掩膜板的厚度。
在其中一个实施例中，所述第四凹槽设置于所述蒸镀面或所述玻璃面。
在其中一个实施例中，所述第四凹槽包括第五凹槽与第六凹槽，所述第五凹槽设置于所述蒸镀面，所述第六凹槽设置于所述玻璃面，沿所述子掩膜板的厚度方向，所述第五凹槽的底壁与所述第六凹槽的底壁之间具有间距。
在其中一个实施例中，所述第五凹槽的深度大于或等于所述第六凹槽的深度。
在其中一个实施例中，所述第四凹槽的横截面形状为多边形、圆形或椭圆形。
在其中一个实施例中，所述掩膜板主体在平面图中具有第一中心线与第二中心线，所述第一中心线与所述第二中心线相垂直；所述掩膜板主体上设置有两组所述子掩膜板，每组所述子掩膜板包括至少一个所述子掩膜板，每相邻两个所述子掩膜板之间具有间距，两组所述子掩膜板关于所述第一中心线轴对称，且两组所述子掩膜板关于所述第二中心线轴对称。
在其中一个实施例中，位于所述第二中心线同侧的所述子掩膜板的所述遮挡部均背向或均面向所述第二中心线设置。
在其中一个实施例中，所述掩膜板主体上设置有多个子掩膜板，所述多个子掩膜板成排地设置或者成阵列地设置；
所述掩膜板主体具有虚拟分割线，所述虚拟分割线将所述多个子掩膜板划分为两组子掩膜板，所述两组子掩膜板包括：位于所述虚拟分割线一侧的第一组子掩膜板和位于所述虚拟分割线另一侧的第二组子掩膜板；所述第一组子掩膜板和所述第二组子掩膜板分别包括至少一个子掩膜板；
所述第一组子掩膜板和所述第二组子掩膜板的各子掩膜板在面向所述虚拟分割线的那侧分别设置有所述遮挡部；或者，所述第一组子掩膜板和所述第二组子掩膜板的各子掩膜板在背向所述虚拟分割线的那侧分别设置有所述遮挡部。
在其中一个实施例中，所述虚拟分割线为虚拟直线。
在其中一个实施例中，所述掩膜板主体上设置有多个子掩膜板，所述多个子掩膜板成排地设置或者成阵列地设置；
在同一排的偶数个依次相邻的所述子掩膜板形成多个依次相邻的子组子掩膜板，每个所述子组子掩膜板均包括两个相邻设置的子掩膜板；
其中，每个所述子组子掩膜板的两个子掩膜板的相对的一侧分别设置有所述遮挡部，相背的一侧不设置所述遮挡部；或者，每个子组子掩膜板的两个子掩膜板的相对的一侧不设置所述遮挡部，相背的一侧分别设置有所述遮挡部。
在其中一个实施例中，所述隔离区为与所述蒸镀区的凹陷部轮廓线相匹配的虚设线。
一种掩膜组件，包括掩膜板框架、支撑条及至少一个如权利要求1-19任一项所述的掩膜板，所述支撑条固定连接于所述掩膜板框架，至少一个所述掩膜板层叠设置于所述支撑条上，且与所述掩膜板框架固定连接。
在其中一个实施例中，所述隔离区为与所述蒸镀区的凹陷部轮廓线相匹配的虚设线。
本申请提供的掩膜板与掩膜组件，将遮挡部划分为两部分，其中虚设区开设有第二蒸镀孔和/或第一凹槽，当采用该掩膜板蒸镀时，蒸镀材料可以从第一蒸镀孔与第二蒸镀孔蒸镀到基板上，第二蒸镀孔和/或第一凹槽的设置，可以减轻遮挡部的重量，使遮挡部与蒸镀区的重量差异小，降低了遮挡部的应力集中，从而使掩膜板主体在张网过程中受力均匀，进一步降低了掩膜板主体在张网过程中的褶皱现象。另外，在虚设区与蒸镀区之间设置有隔离区，以便于对后续制作的显示屏进行切割与封装。
附图说明
图1为本申请一实施例提供的掩膜板的结构示意图；
图2为本申请另一实施例提供的掩膜板的结构示意图；
图3为本申请又一实施例提供的掩膜板的结构示意图；
图4为本申请又一实施例提供的掩膜板的结构示意图；
图5为本申请又一实施例提供的掩膜板的结构示意图；
图6为本申请一实施例提供的掩膜板的局部结构的剖视图；
图7为本申请另一实施例提供的掩膜板的局部结构的剖视图；
图8为本申请又一实施例提供的掩膜板的局部结构的剖视图；
图9为本申请又一实施例提供的掩膜板的局部结构的剖视图；
图10为本申请又一实施例提供的掩膜板的局部结构的剖视图；
图11为本申请又一实施例提供的掩膜板的局部结构的剖视图；
图12为本申请又一实施例提供的掩膜板的局部结构的剖视图；
图13为本申请又一实施例提供的掩膜板的局部结构的剖视图；
图14为本申请又一实施例提供的掩膜板的局部结构的剖视图；
图15为本申请一实施例提供的掩膜组件的结构示意图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
正如背景技术中所述，采用现有技术中的掩膜板，容易出现张网时褶皱的问题，发明人研究发现，出现这种问题的根本原因在于，开槽屏体在制作过程中需要在相应位置进行开口，即在掩膜板上存在遮挡部，由于遮挡部与蒸镀区的结构存在较大区别，例如在蒸镀区设置有蒸镀孔，而在遮挡部不设置有蒸镀孔，导致遮挡部与蒸镀区的重量(单位面积上的重量)差距大，应力容易集中在遮挡部。当应力在遮挡部集中时，在受力不均的驱使下会导致褶皱的发生。
基于此，参阅图1及图2，及参阅图6，本申请一实施例提供一种掩膜板100，包括掩膜板主体10，在掩膜板主体10上设置有至少一个子掩膜板101，子掩膜板101包括蒸镀区12和遮挡部14，在子掩膜板101的厚度方向上，蒸镀区12设置有贯穿子掩膜板101的第一蒸镀孔122，蒸镀区12用于蒸镀显示面板或者显示屏，也即为蒸镀区12的大小优选地正好与需要蒸镀的显示面板或显示屏的大小相同。
在其他实施例中，蒸镀区12的尺寸可以稍大于需要蒸镀的显示面板或显示屏的尺寸，以便在掩膜板100上还可增设其他遮挡结构，以进一步的减小褶皱。
继续参阅图1与图2，以及结合参阅图6，遮挡部14包括虚设区142与隔离区144，虚设区142的形状和位置对应异形显示屏的异形区(异形区例如为开槽区或打孔区)，隔离区144位于虚设区142与蒸镀区12之间，在子掩膜板101的厚度方向上，虚设区142设置有第二蒸镀孔1422，第二蒸镀孔1422贯穿子掩膜板101。
如此，将遮挡部14划分为两部分，其中虚设区142开设有第二蒸镀孔1422，当采用该掩膜板100蒸镀时，蒸镀材料可以从第一蒸镀孔122与第二蒸镀孔1422蒸镀到基板上，第二蒸镀孔1422的设置，可以减轻遮挡部14的重量，使遮挡部14与蒸镀区12的重量差异小，降低了遮挡部14的应力集中，从而使掩膜板主体10在张网过程中受力均匀，进一步降低了掩膜板主体10在张网过程中出现的褶皱现象；同时在虚设区142与蒸镀区12之间设置有隔离区144，以便于对后续制作的显示屏进行切割与封装。
在本实施例中，掩膜板主体10的形状不受限定，如可以为规则的长方体状或圆形，在其他实施例中，也可以选用其他不规则的形状，如掩膜板主体10的相对的两条边为直线，另外相对的两条边为弧形的异形。且蒸镀区12的形状也不受限定，如可以为长方形，也可以为圆 形。当蒸镀区12为长方形时，凹陷部开(例如图1中的由遮挡部14围绕而成的部分)设于蒸镀区12的一条边或多条边上。遮挡部14的形状也不受限定，如可以为弧形遮挡部14，也可以为多边形遮挡部14。
具体地，掩膜板主体10上具有两组子掩膜板101，每组子掩膜板101包括至少一个子掩膜板101，每相邻两个子掩膜板101之间具有间距。掩膜板主体10具有第一中心线11与第二中心线13，第一中心线11与第二中心线13垂直，优选地，两组子掩膜板101各自关于第一中心线11轴对称，两组子掩膜板101关于第二中心线13轴对称。可以理解，在图1至图3中，位于第二中心线13左侧的为一组(第一组)子掩膜板101，位于第二中心线13右侧的为另一组(第二组)子掩膜板101。图1和图2中每组子掩膜板101各包括一个子掩膜板101。在图3中，每组子掩膜板101各包括四个呈一横排设置的子掩膜板101。当然，在其他实施例中，每组子掩膜板101还可以包括呈阵列形式(例如不少于两排两列)设置的子掩膜板101。
优选地，两组子掩膜板101关于第一中心线11与第二中心线13均轴对称设置，则位于第一中心线11与第二中心线13两侧的遮挡部14的数量相同，则此时掩膜板主体10在张网时第一中心线11与第二中心线13两侧受力均匀，进一步降低了遮挡部14位置的褶皱，张网精度得以提高，从而也使得后续显示屏像素蒸镀位置精度较高，且也提高了后续显示屏的开口区(即异形区)的显示效果。
在其中一个实施例中，继续参阅图1，如果设置第一方向(横向或左右方向)与第一中心线11平行，第二方向(纵向或上下方向)与第二中心线13平行，掩膜板主体10在横向上设置有一排子掩膜板101，当以图1中的掩膜板主体10的左右两边中心的连线为第一中心线11，上下两边中心的连线为第二中心线13时，位于第二中心线13同侧的子掩膜板101的遮挡部14均背向第二中心线13设置，或者可以说，位于第二中心线13同侧的各个子掩膜板101上的遮挡部14均设置在各个子掩膜板101的远离第二中心线13的那侧。
在另一个实施例中，继续参阅图2，掩膜板主体10上横向设置有一排子掩膜板101，当以图2中的掩膜板主体10的左右两边中心的连线为第一中心线11，上下两边中心的连线为第二中心线13时，位于第二中心线13同侧的子掩膜板101的遮挡部14均面向第二中心线13设置，或者可以说，位于第二中心线13同侧的各个子掩膜板101上的遮挡部14均设置在各个子掩膜板101的靠近第二中心线13的那侧。
在另一个实施例中，继续参阅图3，掩膜板主体10上横向设置有一排子掩膜板101，当以图3中的掩膜板主体10的左右两边中心的连线为第一中心线11，上下两边中心的连线为第二中心线13时，位于第二中心线13同侧的一组子掩膜板101可以配置成包括至少一个子组子掩膜板101，每个子组子掩膜板101分别包括相邻的两个子掩膜板101，每个子组子掩膜板101的两个子掩膜板101的遮挡部14优选地相对设置。
在又一个实施例中，参阅图4，掩膜板主体10上以阵列的形式设置有多排子掩膜板101，也即，多个子掩膜板101形成多(横)排多(纵)列的布置形式。每一排子掩膜板101的多个子掩膜板101沿左右方向依次大体均匀地布置，每相邻两排子掩膜板101之间的间隔大体 均匀。当以图4中的掩膜板主体10的左右两边中心的连线为第一中心线11，上下两边中心的连线为第二中心线13时，优选地，位于第二中心线13同侧的子掩膜板101的遮挡部14均面向第二中心线13设置。在另一个实施例中，还可以将位于第二中心线13同侧的子掩膜板101的遮挡部14设置成均背向第二中心线13，如此可以减少张网下垂量，以进一步改善张网褶皱。在另一实施例中，还可以设置每排中位于第二中心线13同侧的子掩膜板101包括至少一个子组子掩膜板101，每个子组子掩膜板101分别包括相邻的两个子掩膜板101，每个子组子掩膜板101的两个子掩膜板101的遮挡部14相对设置。
参阅图5，在其他实施例中，当两组子掩膜板101所包含的子掩膜板101的总和仍然为偶数个时，两组子掩膜板101可以只相对于其中一条中心线对称设置，当以图5中的掩膜板主体10的左右两边中心的连线为第一中心线11(图5中未示出)，上下两边中心的连线为第二中心线13(图5中未示出)时，此时两组子掩膜板101只关于第一中心线11轴对称，而关于第二中心线13并非轴对称。在另一个实施例中，两组子掩膜板101也可以只关于第二中心线13轴对称，而关于第一中心线11并非轴对称。
在其他实施例中，子掩膜板101的总数量可以选择为奇数个，此时子掩膜板101只关于其中第一中心线和第二中心线中的一条中心线对称，而关于另一条中心线非对称。
在另一些实施例中，还可以设置两组子掩膜板101关于第一中心线11与第二中心线13均不对称设置。
在本实施例中，隔离区144可以为与蒸镀区12的凹陷部轮廓线相匹配的虚设线，则此时虚设部142可以占据整个遮挡部14。
在另一个实施例中，隔离区144占据遮挡部14的一部分，即此时隔离区144不再单单是与蒸镀区12的轮廓线相匹配的虚设线，而是一个实际存在的隔离区域，此时隔离区144占据遮挡部14的比例不受限定，只要保证最后得到的显示屏中与隔离区122相对应的切割区域的范围，满足切割时所需要的切割与封装余量即可。其中，隔离区144与蒸镀区12的分界线理论上为对显示屏进行切割操作以形成异形区时的切割边界线。当隔离区144占据遮挡部14的一部分时，在基板的与隔离区144对应的位置并不会有蒸镀材料蒸镀到基板上，当蒸镀好后，在显示屏的与掩膜板100的隔离区144对应的位置进行切割与封装即可(即将显示屏的与虚设区142对应的部分切割掉)，由于对应隔离区144没有蒸镀材料存在，则不会导致水氧入侵，后期的封装效果好。
继续参阅图6，在本实施例中，第一蒸镀孔122与第二蒸镀孔1422的形状大体相同，且当第一蒸镀孔122与第二蒸镀孔1422均为多个时，第二蒸镀孔1422在虚设区142的排布与第一蒸镀孔122在蒸镀区12的排布方式优选地相同，也即为除去隔离区144外，虚设区142与蒸镀区12可以看做一个整体，多个第一蒸镀孔122与多个第二蒸镀孔1422相互之间具有间距地设置于该整体上。
具体地，上述排布方式即为在第一方向和/或在第二方向上，第二蒸镀孔1422在虚设区 142的排布，与第一蒸镀孔122在蒸镀区12的排布大体相同。例如，第一蒸镀孔122成排设置于蒸镀区12，第二蒸镀孔1422为成排设置的第一蒸镀孔122的延伸，且每排上的每相邻两个第二蒸镀孔1422之间的间距与每排上每相邻两个第一蒸镀孔122之间的间距相同；同时，第一蒸镀孔122成列设置于蒸镀区12，且每列上每相邻两个第二蒸镀孔1422之间的间距与每列上每相邻两个第一蒸镀孔122之间的间距相同。
在其他实施例中，第一蒸镀孔122与第二蒸镀孔1422的形状与排布方式也可以选择不同，可以根据实际需要设定，在此不作限定。如可以设置每排上的每相邻两个第二蒸镀孔1422之间的间距与每排上每相邻两个第一蒸镀孔122之间的间距不同，或者设置每列上每相邻两个第二蒸镀孔1422之间的间距与每列上每相邻两个第一蒸镀孔122之间的间距不同。
同时，可以理解的是，一个子掩膜板101上的第一蒸镀孔122与第二蒸镀孔1422的数量均可以为一个。
在一种实施例中，第一蒸镀孔122包括沿蒸镀区12的厚度方向设置且连通的第一半刻孔1222与第二半刻孔1224，第二蒸镀孔1422也包括沿虚设区142的厚度方向设置且连通的第一半刻孔1222与第二半刻孔1224，即蒸镀孔分别从玻璃面16与蒸镀面18采用两次半刻蚀的方式形成，可以保证形成的蒸镀孔的边缘较光滑，使后续有机材料的蒸镀效果较好。虽然在本实施例中，沿子掩膜板101的厚度方向上，第一半刻孔1222与第二半刻孔1224的纵向截面形状不同，但是在其他实施例中，第一板刻孔1222与第二半刻孔1224的纵向截面的形状可以相同。
优选地，第一半刻孔1222设置于掩膜板主体10的玻璃面16，第二半刻孔1224设置于掩膜板主体10的蒸镀面18，其中玻璃面18为掩膜板主体10远离蒸镀源的面，蒸镀面18为掩膜板主体10靠近蒸镀源的面，第一半刻孔1222从靠近玻璃面16的一端到远离玻璃面16的一端逐渐收拢，第二半刻孔1224从靠近蒸镀面18的一端到远离蒸镀面18的一端逐渐收拢，最后第一半刻孔1222与第二半刻孔1224在掩膜板主体10沿厚度方向上的大体中心位置处连通。优选地，第二半刻孔1224的开口(即第二半刻孔1224相对于蒸镀面18的开口)大小包覆第一半刻孔1222的开口(即第一半刻孔1222相对于玻璃面16的开口)大小，以保证从第一半刻孔1224进入第一蒸镀孔122的蒸镀材料可以填充满第一半刻孔1222。也即，第一半刻孔1222的开口在沿子掩膜板101的厚度方向(也是掩膜板主体10的厚度方向)上的投影可以完全位于第二半刻孔1224的开口中。
优选地，在本实施例中，第一半刻孔1222与第二半刻孔1224的横截面形状(与纸面垂直方向的截面形状)均为矩形，但是在其他实施例中，第一半刻孔1222与第二半刻孔1224的横截面形状可以选择为圆形或椭圆形。
在其他实施例中，参阅图7-图9，在子掩膜板101的厚度方向上，虚设区142设置有至少一个第一凹槽1421，第一凹槽1421的深度小于子掩膜板101的厚度。
如此，由于遮挡部14被划分为了两部分，其中虚设区142设有第一凹槽1421，第一凹 槽1421的设置，可以减轻遮挡部14的重量，使遮挡部14与蒸镀区12的重量差异小，降低了遮挡部14的应力集中，从而使掩膜板主体10在张网过程中受力均匀，进一步降低了掩膜板主体10在张网过程中的褶皱现象；同时在虚设区142与蒸镀区12之间设置有隔离区144，以便于对后续制作的显示屏进行切割与封装。
更具体地，第一凹槽1421可以采用以下三种方式中的一种开设于虚设区142：
一、第一凹槽1421只开设于虚设区142的玻璃面16(参阅图7)；
二、第一凹槽1421只开设于虚设区142的蒸镀面18(参阅图8)；
三、第一凹槽1421同时开设于虚设区142的蒸镀面18与玻璃面16(参阅图9)。
在其中一个实施例中，第一凹槽1421开设于虚设区142的蒸镀面，即只在虚设区142的蒸镀面开设有第一凹槽1421。在其他实施例中，第一凹槽1421也可以只开设于虚设区142的玻璃面(参阅图7)。
具体地，参阅图8，开设在虚设区142的蒸镀面18的第一凹槽1421数量为一个，一个第一凹槽1421采用整面半刻的方式开设于虚设区142的蒸镀面。在本实施例中，可以设置第一凹槽1421覆盖虚设区142的蒸镀面的全部区域，也可以设置第一凹槽1421覆盖虚设区142的蒸镀面的大部分区域，且第一凹槽1421的横截面形状可以采用多边形，如三角形、长方形或者五边形等，还可以采用圆形或者椭圆形。上述当第一凹槽1421覆盖虚设区142的蒸镀面的全部区域时，第一凹槽1421的底壁与遮挡部14的虚设区142的蒸镀面的大小完全相同，此时第一凹槽1421的底壁可以充当遮挡部14的蒸镀面。
在另一个实施例中，开设在虚设区142的蒸镀面18的第一凹槽1421的数量为至少两个，每相邻两个第一凹槽1421之间具有间距，该至少两个第一凹槽1421可以采用条状半刻或点状半刻的方式开设于虚设区142的蒸镀面18。当第一凹槽1421采用条状半刻时，第一凹槽1421的横截面形状为长条状；当第一凹槽1421采用点状半刻时，第一凹槽1421的横截面形状为圆形或椭圆形。在其他实施例中，当第一凹槽1421采用条状半刻时，第一凹槽1421的横截面的条形的长边沿掩膜板主体10长边的方向延伸，以进一步减小掩膜板100的张网褶皱。
参阅图9，在又一个实施例中，第一凹槽1421同时开设于虚设区142的蒸镀面18与虚设区142的玻璃面16，即在虚设区142的蒸镀面18与虚设区142的玻璃面16均开设有第一凹槽1421。其中，在虚设区142的蒸镀面18与虚设区142的玻璃面18均开设有第一凹槽1421相较于上述实施例中的如第一凹槽1421只开设在虚设区142的蒸镀面18或玻璃面16其中一者上的情况，由于开设有第一凹槽1421的蒸镀面或玻璃面的硬度将会小于没有开设第一凹槽的玻璃面或蒸镀面的硬度，所以在该情况下一定程度上存在掩膜板主体10折断的风险，因而进一步降低了掩膜板张网后，对掩膜板100自身的硬度的影响，进而进一步减小褶皱。
优选地，第一凹槽1421包括具有底壁的第二凹槽与具有底壁的第三凹槽，第二凹槽开设于虚设区142的蒸镀面，第三凹槽开设于虚设区142的玻璃面，第二凹槽与第三凹槽沿虚设 区142的厚度方向相互隔离地设置，即第二凹槽的底壁与第三凹槽的底壁之间具有间距，以保证任何一个第二凹槽与任何一个第三凹槽在虚设区142的厚度方向上不存在相互连通的情况，从而避免像素通过第一凹槽蒸镀到基板上的情况发生。
第二凹槽与第三凹槽沿虚设区142厚度方向的深度可以相同也可以不同，且第二凹槽与第三凹槽的横截面形状可以相同也可以不同。例如，第二凹槽的深度大于第三凹槽的深度，或者第二凹槽的深度与第三凹槽的深度相等，或者第二凹槽的深度小于第三凹槽的深度。第二凹槽与第三凹槽的深度可以均为子掩膜板101的厚度的一半，或者第二凹槽与第三凹槽的深度均大于子掩膜板101的厚度的一半。
在一个实施例中，第二凹槽与第三凹槽的数量可以均为一个。优选地，第二凹槽朝向子掩膜板101所在平面具有第一投影(厚度方向的投影)，第三凹槽朝向子掩膜板101所在平面具有第二投影(厚度方向的投影)，第一投影与第二投影至少部分重叠，第二凹槽与第三凹槽沿虚设区142厚度方向的深度之和小于虚设区142的厚度。
优选地，第二凹槽可以覆盖虚设区142的蒸镀面18的大部分区域或全部区域，第三凹槽可以覆盖虚设区142的玻璃面16的大部分区域或全部区域，第一投影与第二投影完全重叠。可以理解的是，在其他实施例中，第一投影与第二投影也可不完全重叠，例如可以采用只有部分重叠的方式即可。
在又一个实施例中，第二凹槽与第三凹槽的数量可以均为至少两个。具体地，每个第二凹槽朝向子掩膜板101所在平面具有第一投影，每个第三凹槽朝向子掩膜板101所在平面具有第二投影，第一投影与第二投影至少部分重叠，第二凹槽与第三凹槽沿虚设区142厚度方向的深度之和小于虚设区142的厚度。
优选地，第一投影与第二投影可以完全重叠。可以理解的是，在其他实施例中，第一投影与第二投影也可不完全重叠，只采用部分重叠的方式即可。
在本实施例中，第二凹槽与第三凹槽的数量可以相同也可以不同，如第二凹槽为两个，第三凹槽的数量也为两个，或者第二凹槽的数量为两个，第三凹槽的数量为三个。
在又一个实施例中，第二凹槽与第三凹槽的数量可以均为一个。第二凹槽朝向子掩膜板101所在平面具有第一投影，第三凹槽朝向子掩膜板101所在平面具有第二投影，第一投影与第二投影不相重叠地设置。
优选地，第一投影与第二投影分别为多个，且第一投影与第二投影交错设置，即，第二凹槽与第三凹槽在子掩膜板101所在的平面上相互错开，各个第一投影和第二投影优选地不重合且互相分离，此时可以设置相邻第二凹槽与第三凹槽的深度之和大于虚设区142的厚度，如此设置并不会导致虚设区142在厚度方向上贯通的情况发生，从而也不会对后续的蒸镀产生影响。
在又一个实施例中，第二凹槽与第三凹槽的数量可以均为至少两个，第二凹槽朝向虚设 区142所在平面具有第一投影，第三凹槽朝向虚设区142所在平面具有第二投影，第一投影与第二投影相互错开，各第一投影和各第二投影优选地不重合且互相分离，此时也可以设置相邻第二凹槽与第三凹槽的深度之和大于虚设区142的厚度，如此设置并不会导致虚设区142在厚度方向上贯通的情况发生，从而也不会对后续的蒸镀产生影响。
在另一个实施例中，还可以在虚设区142同时开设有第二蒸镀孔1422与第一凹槽1421。具体地，第二蒸镀孔1422与第一凹槽1421在虚设区142上间隔分布，例如，每相邻两个第二蒸镀孔1422之间设置有一个第一凹槽1421，每相邻两个第一凹槽1421之间设置有一个第二蒸镀孔1422。
参阅图10，在其中一个实施例中，为了进一步保证遮挡部14与蒸镀区12的重量差异小，在遮挡部14的隔离区144沿厚度方向设置有至少一个第四凹槽1442，单个凹槽1422的深度小于子掩膜板101的厚度。由于第四凹槽1442的存在，则减轻了隔离区144的厚度，如此进一步减小了遮挡部14的重量，遮挡部14与蒸镀区12的重量差异减小，进一步降低了遮挡部14的应力集中，从而使掩膜板主体10在张网过程中受力均匀，降低了掩膜板主体10在张网过程中的褶皱现象。
具体地，第四凹槽1442可以采用以下三种方式中的一种开设于隔离区142：
一、第四凹槽1442只开设于隔离区142的蒸镀面18；
二、第四凹槽1442只开设于隔离区142的玻璃面16；
三、第四凹槽1442同时开设于隔离区142的蒸镀面18与玻璃面16。
同时需要说明的是，隔离区142的蒸镀面为掩膜板主体10的蒸镀面18的一部分，隔离区142的玻璃面为掩膜板主体10的玻璃面16的一部分。
继续参阅图10及图11，在其中一个实施例中，第四凹槽1442开设于隔离区144的玻璃面16，即只在隔离区144的玻璃面16开设有第四凹槽1442。优选地，开设在隔离区144的蒸镀面的第四凹槽1442数量为一个，一个第四凹槽1442采用整面半刻的方式开设于隔离区144的玻璃面。在其他实施例中，开设在隔离区144的玻璃面的第四凹槽1442的数量可以为至少两个，每相邻两个第四凹槽1442之间具有间距，至少两个第四凹槽1442采用条状半刻或点状半刻的方式开设于隔离区144的玻璃面16。
参阅图12及图13，在另一个实施例中，第四凹槽1442开设于隔离区144的蒸镀面18，即只在隔离区144的蒸镀面开设有第四凹槽1442。优选地，开设在隔离区144的蒸镀面18的第四凹槽1442数量为一个，一个第四凹槽1442采用整面半刻的方式开设于隔离区144的蒸镀面144。在本实施例中，设置第四凹槽1442可以覆盖隔离区144的蒸镀面18的全部区域，也可以设置第四凹槽1442覆盖隔离区144的蒸镀面18的大部分区域，且第四凹槽1442的横截面形状可以采用多边形，如三角形、长方形或者五边形，还可以采用圆形或者椭圆形。上述的当第四凹槽1422覆盖隔离区144的蒸镀面18的全部区域时，第四凹槽1422的底壁可 以与隔离区144的蒸镀面的大小完全相同，此时第四凹槽1422的底壁可以充当隔离区144的蒸镀面。
在另一个实施例中，开设在隔离区144的蒸镀面18的第四凹槽1442的数量可以为至少两个，每相邻两个第四凹槽1442之间具有间距，该至少两个第四凹槽1442可以采用条状半刻或点状半刻的方式开设于隔离区144的蒸镀面18。当第四凹槽采用条状半刻时，第四凹槽1442的横截面形状为长条状；当第四凹槽1442采用点状半刻时，第四凹槽1442的横截面形状为圆形或椭圆形。在其他实施例中，当第四凹槽1442采用条状半刻时，第四凹槽1442的横截面的条形的长边沿掩膜板主体10长边的方向延伸，以进一步减小掩膜板100的张网褶皱。
参阅图14，在又一个实施例中，第四凹槽1442同时开设于隔离区144的蒸镀面18与玻璃面16，即在隔离区144的蒸镀面18与玻璃面16均开设有第四凹槽1442。其中，在隔离区144的蒸镀面18与隔离区144的玻璃面16均开设有第四凹槽1442相较于上述实施例中的如当第四凹槽1442只开设在隔离区144的蒸镀面和玻璃面中一者上时(由于开设有第四凹槽1442的蒸镀面或玻璃面的硬度将会小于没有开设第四凹槽的玻璃面或蒸馏面的硬度，此时在一定程度上存在掩膜板主体10折断的风险)，进一步降低了掩膜板张网后，对掩膜板100自身的硬度的影响，进而进一步减小褶皱。
优选地，第四凹槽1442包括具有底壁的第五凹槽与具有底壁的第六凹槽，第五凹槽开设于隔离区144的蒸镀面18，第六凹槽开设于隔离区144的玻璃面16，第五凹槽与第六凹槽优选地沿隔离区144的的厚度方向相互隔离地设置，即第五凹槽的底壁与第六凹槽的底壁之间具有间距，以保证任何一个第五凹槽与任何一个第六凹槽在隔离区144的的厚度方向上不存在相互连通的情况，从而避免像素在隔离区144蒸镀到基板上的情况发生。
第五凹槽与第六凹槽沿隔离区144的厚度方向的深度可以相同也可以不同，且第五凹槽与第六凹槽的横截面形状可以相同也可以不同。例如，第五凹槽的深度大于第六凹槽的深度，或者第五凹槽的深度与第六凹槽的深度相等，或第五凹槽的深度小于第六凹槽的深度。第五凹槽与第六凹槽的深度可以均为子掩膜板101的厚度的一半，或者第五凹槽与第六凹槽的深度均大于子掩膜板101的厚度的一半。
在一个实施例中，第五凹槽与第六凹槽的数量可以均为一个。具体地，第五凹槽朝向隔离区144的所在平面具有第一投影，第六凹槽朝向隔离区144的所在平面具有第二投影，第一投影与第二投影至少部分重叠，第五凹槽与第六凹槽沿隔离区144的厚度方向的深度之和小于隔离区144的厚度。
优选地，第五凹槽可以覆盖隔离区144的蒸镀面18的大部分区域或全部区域，第六凹槽可以覆盖隔离区144的玻璃面16的大部分区域或全部区域，第一投影与第二投影完全重叠。可以理解的是，在其他实施例中，第一投影与第二投影也可不完全重叠，例如可以采用只有部分重叠的方式。
在又一个实施例中，第五凹槽与第六凹槽的数量可以均为至少两个。具体地，每个第五 凹槽朝向隔离区144所在平面具有第三投影(厚度方向的投影)，每个第六凹槽朝向隔离区144所在平面具有第四投影(厚度方向的投影)，第三投影与第四投影至少部分重叠，第五凹槽与第六凹槽沿隔离区144的厚度方向的深度之和小于隔离区144的厚度。
优选地，第三投影与第四投影可以完全重叠。可以理解的是，在其他实施例中，第三投影与第四投影也可不完全重叠，只采用部分重叠的方式即可。
在本实施例中，第五凹槽与第六凹槽的数量可以相同也可以不同，如第五凹槽为两个，第六凹槽的数量也为两个，或者第五凹槽的数量为两个，第六凹槽的数量为三个。
在又一个实施例中，第五凹槽与第六凹槽的数量可以均为一个。第五凹槽朝向隔离区144所在平面具有第三投影，第六凹槽朝向隔离区144所在平面具有第四投影，第三投影与第四投影不相重叠地设置。
优选地，第三投影与第四投影分别为多个，且第三投影与第四投影交错设置。即，第五凹槽与第六凹槽在隔离区144所在的平面上相互错开，各个第三投影和第四投影优选地不重合且互相分离，此时可以设置相邻第五凹槽与第六凹槽的深度之和大于隔离区144的厚度，如此设置并不会导致隔离区144在厚度方向上贯通的情况发生，从而也不会对后续的蒸镀产生影响。
在又一个实施例中，第五凹槽与第六凹槽的数量可以均为至少两个，第五凹槽朝向隔离区144所在平面具有第一投影，第六凹槽朝向隔离区144所在平面具有第二投影，第一投影与第二投影相互错开，各第三投影和各第四投影优选地不重合且互相分离，此时也可以设置相邻第五凹槽与第六凹槽的深度之和大于隔离区144的厚度，如此设置并不会导致隔离区144在厚度方向上贯通的情况发生，从而也不会对后续的蒸镀产生影响。
在其他实施例中，还可以在隔离区144设置有第三蒸镀孔；或者在隔离区144同时设置有第三蒸镀孔与第四凹槽1442，优选地，第三蒸镀孔与第四凹槽1442在隔离区144上间隔分布，例如，每相邻两个第三蒸镀孔之间设置有一个第四凹槽1442，每相邻两个第四凹槽1442之间设置有一个第四蒸镀孔。
本申请实施例提供的掩膜板，将遮挡部14划分为两部分，其中虚设区142开设有第二蒸镀孔1422或第一凹槽1421，当采用该掩膜板100蒸镀时，蒸镀材料可以从第一蒸镀孔122与第二蒸镀孔1422蒸镀到基板上，第二蒸镀孔1422或第一凹槽1421的设置，可以减轻遮挡部14的重量，使遮挡部14与蒸镀区12的重量差异小，降低了遮挡部14的应力集中，从而使掩膜板主体10在张网过程中受力均匀，进一步降低了掩膜板主体10在张网过程中的褶皱现象；同时在虚设区142与蒸镀区12之间设置有隔离区144，以便于对后续制作的显示屏进行切割与封装。
参阅图15，本申请一实施例还提供一种掩膜组件，包括掩膜板框架20、支撑条30及至少一个上述所述的掩膜板100，掩膜板100包括掩膜板主体10，在掩膜板主体10上设置有至少一个子掩膜板101。支撑条30固定连接于掩膜板框架20，至少一个掩膜板100层叠设置于 支撑条30上，且与掩膜板框架30固定连接。
掩模组件在工作过程时，掩膜板100的蒸镀面面向蒸镀源，掩膜板100的玻璃面面向基板，支撑条30位于掩膜板100的蒸镀面，以防止掩膜板100在蒸镀过程中下垂，进一步降低了掩膜板100在张网过程中的褶皱现象。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (20)

  1. 一种掩膜板，其中，包括：
    掩膜板主体，所述掩膜板主体具有蒸镀面和玻璃面，所述蒸镀面适于面向蒸镀源地设置，所述玻璃面适于背向蒸镀源地设置；
    设置于所述掩膜板主体上的至少一个子掩膜板，所述子掩膜板包括蒸镀区和遮挡部；
    在所述子掩膜板的厚度方向上，所述蒸镀区设置有贯穿所述子掩膜板的第一蒸镀孔，
    所述遮挡部包括隔离区和虚设区，所述虚设区与显示屏的异形区对应，所述隔离区位于所述虚设区与所述蒸镀区之间，
    在所述子掩膜板的厚度方向上，所述虚设区设置有第二蒸镀孔，所述第二蒸镀孔贯穿所述子掩膜板，和/或所述虚设区开设有至少一个第一凹槽，所述第一凹槽的深度小于所述子掩膜板的厚度。
  2. 根据权利要求1所述的掩膜板，其中，所述第二蒸镀孔与所述第一蒸镀孔的形状相同。
  3. 根据权利要求1或2所述的掩膜板，其中，所述第二蒸镀孔包括沿所述子掩膜板的厚度方向设置且连通的第一半刻孔与第二半刻孔；
    其中，所述第一半刻孔设置于所述玻璃面，所述第二半刻孔设置于所述蒸镀面，所述第一半刻孔从所述掩膜板主体靠近所述玻璃面的一端到远离所述玻璃面的一端逐渐收拢，所述第二半刻孔从所述掩膜板主体靠近所述蒸镀面的一端到远离所述蒸镀面的一端逐渐收拢且与所述第一半刻孔连通。
  4. 根据权利要求3所述的掩膜板，其中，所述第一半刻孔的开口沿子掩膜板的厚度方向上的投影位于第二半刻孔的开口中。
  5. 根据权利要求1所述的掩膜板，其中，所述第一凹槽设置于所述蒸镀面或所述玻璃面。
  6. 根据权利要求1所述的掩膜板，其中，所述第一凹槽包括第二凹槽与第三凹槽，所述第二凹槽设置于所述蒸镀面，所述第三凹槽设置于所述玻璃面；沿所述子掩膜板的厚度方向上，所述第二凹槽的底壁与所述第三凹槽的底壁之间具有间距。
  7. 根据权利要求1所述的掩膜板，其中，所述第一凹槽的横截面形状为多边形、圆形，或椭圆形。
  8. 根据权利要求1所述的掩膜板，其中，在所述子掩膜板的厚度方向上，所述隔离区开设有至少一个第四凹槽，所述第四凹槽的深度小于所述子掩膜板的厚度。
  9. 根据权利要求8所述的掩膜板，其中，所述第四凹槽设置于所述蒸镀面或所述玻璃面。
  10. 根据权利要求8所述的掩膜板，其中，所述第四凹槽包括第五凹槽与第六凹槽，所述第五凹槽设置于所述蒸镀面，所述第六凹槽设置于所述玻璃面；沿所述子掩膜板的厚度方 向，所述第五凹槽的底壁与所述第六凹槽的底壁之间具有间距。
  11. 根据权利要求10所述的掩膜板，其中，所述第五凹槽的深度大于或等于所述第六凹槽的深度。
  12. 根据权利要求8所述的掩膜板，其中，所述第四凹槽的横截面形状为多边形、圆形或椭圆形。
  13. 根据权利要求1所述的掩膜板，其中，所述掩膜板主体在平面图中具有第一中心线与第二中心线，所述第一中心线与所述第二中心线相垂直；
    所述掩膜板主体上设置有两组所述子掩膜板，每组所述子掩膜板包括至少一个所述子掩膜板，每相邻两个所述子掩膜板之间具有间距，两组所述子掩膜板关于所述第一中心线轴对称，且两组所述子掩膜板关于所述第二中心线轴对称。
  14. 根据权利要求13所述的掩膜板，其中，位于所述第二中心线同侧的所述子掩膜板的所述遮挡部均背向或均面向所述第二中心线设置。
  15. 根据权利要求13所述的掩膜板，其中，每组所述子掩膜板包括至少一个子组子掩膜板，每个所述子组子掩膜板包括两个相邻的所述子掩膜板，每个所述子组子掩膜板的两个相连的所述子掩膜板的所述遮挡部相对地设置。
  16. 根据权利要求1所述的掩膜板，其中，
    所述掩膜板主体上设置有多个子掩膜板，所述多个子掩膜板成排地设置或者成阵列地设置；
    所述掩膜板主体具有虚拟分割线，所述虚拟分割线将所述多个子掩膜板划分为两组子掩膜板，所述两组子掩膜板包括：位于所述虚拟分割线一侧的第一组子掩膜板和位于所述虚拟分割线另一侧的第二组子掩膜板；所述第一组子掩膜板和所述第二组子掩膜板分别包括至少一个子掩膜板；
    所述第一组子掩膜板和所述第二组子掩膜板的各子掩膜板在面向所述虚拟分割线的那侧分别设置有所述遮挡部；或者，所述第一组子掩膜板和所述第二组子掩膜板的各子掩膜板在背向所述虚拟分割线的那侧分别设置有所述遮挡部。
  17. 根据权利要求16所述的掩膜板，其中，所述虚拟分割线为虚拟直线。
  18. 根据权利要求1所述的掩膜板，其中，
    所述掩膜板主体上设置有多个子掩膜板，所述多个子掩膜板成排地设置或者成阵列地设置；
    在同一排的偶数个依次相邻的所述子掩膜板形成多个依次相邻的子组子掩膜板，每个所述子组子掩膜板均包括两个相邻设置的子掩膜板；
    其中，每个所述子组子掩膜板的两个子掩膜板的相对的一侧分别设置有所述遮挡部，相背的一侧不设置所述遮挡部；或者，每个子组子掩膜板的两个子掩膜板的相对的一侧不设置所述遮挡部，相背的一侧分别设置有所述遮挡部。
  19. 根据权利要求1所述的掩膜板，其中，所述隔离区为与所述蒸镀区的凹陷部轮廓线相匹配的虚设线。
  20. 一种掩膜组件，包括掩膜板框架、支撑条及至少一个如权利要求1-19任一项所述的掩膜板，所述支撑条固定连接于所述掩膜板框架，至少一个所述掩膜板层叠设置于所述支撑条上，且与所述掩膜板框架固定连接。
PCT/CN2018/103296 2018-05-14 2018-08-30 掩膜板及掩膜组件 WO2019218536A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP18918475.7A EP3623495A4 (en) 2018-05-14 2018-08-30 MASK PLATE AND MASK ARRANGEMENT
US16/331,987 US20210355572A1 (en) 2018-05-14 2018-08-30 Mask and mask assembly
JP2019568386A JP7029477B2 (ja) 2018-05-14 2018-08-30 マスク及びマスクコンポーネント
KR1020207001822A KR102257213B1 (ko) 2018-05-14 2018-08-30 마스크 및 마스크 어셈블리

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810454597.5 2018-05-14
CN201810454597.5A CN108642440B (zh) 2018-05-14 2018-05-14 掩膜板及掩膜组件

Publications (1)

Publication Number Publication Date
WO2019218536A1 true WO2019218536A1 (zh) 2019-11-21

Family

ID=63755074

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/103296 WO2019218536A1 (zh) 2018-05-14 2018-08-30 掩膜板及掩膜组件

Country Status (7)

Country Link
US (1) US20210355572A1 (zh)
EP (1) EP3623495A4 (zh)
JP (1) JP7029477B2 (zh)
KR (1) KR102257213B1 (zh)
CN (1) CN108642440B (zh)
TW (1) TWI690107B (zh)
WO (1) WO2019218536A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113403573A (zh) * 2021-01-08 2021-09-17 达运精密工业股份有限公司 遮罩

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11326245B2 (en) 2018-05-14 2022-05-10 Kunshan Go-Visionox Opto-Electronics Co., Ltd. Masks for fabrication of organic lighting-emitting diode devices
CN208266253U (zh) * 2018-05-14 2018-12-21 昆山国显光电有限公司 掩膜板
CN109207920B (zh) * 2018-11-12 2021-02-09 京东方科技集团股份有限公司 掩模版
CN110760791A (zh) * 2019-02-28 2020-02-07 云谷（固安）科技有限公司 掩膜板及掩膜组件
CN109943804A (zh) * 2019-03-28 2019-06-28 京东方科技集团股份有限公司 一种沉积掩膜板
CN110018610A (zh) * 2019-04-25 2019-07-16 武汉天马微电子有限公司 掩模板、显示面板、显示面板的制作方法和显示装置
CN110004407B (zh) * 2019-05-21 2021-03-02 京东方科技集团股份有限公司 掩膜版组件及其制备方法
CN110364639B (zh) * 2019-07-15 2022-03-22 云谷（固安）科技有限公司 显示面板及其制作方法、掩膜板
CN110331377B (zh) * 2019-07-24 2021-10-29 京东方科技集团股份有限公司 掩膜片及其制作方法、开口掩膜板及其使用方法、薄膜沉积设备
CN110423983B (zh) * 2019-08-30 2021-11-16 京东方科技集团股份有限公司 掩膜版
CN110699637B (zh) * 2019-10-17 2021-03-23 昆山国显光电有限公司 掩膜版的制作方法、掩膜版和显示面板的制作方法
CN210916231U (zh) * 2019-10-18 2020-07-03 昆山国显光电有限公司 一种掩膜版
CN110629158B (zh) * 2019-10-31 2021-01-05 昆山国显光电有限公司 一种掩膜版
CN110846614B (zh) * 2019-11-21 2022-03-25 昆山国显光电有限公司 一种掩膜版和蒸镀系统
TWI749533B (zh) * 2020-04-23 2021-12-11 旭暉應用材料股份有限公司 金屬掩膜
CN111647846B (zh) * 2020-05-29 2022-02-22 昆山国显光电有限公司 支撑条及掩膜版
CN111549316B (zh) * 2020-06-22 2022-07-15 京东方科技集团股份有限公司 蒸镀用掩膜版
CN111809147B (zh) * 2020-08-17 2023-04-18 昆山国显光电有限公司 掩膜板及蒸镀装置
CN111926291A (zh) * 2020-08-31 2020-11-13 合肥维信诺科技有限公司 掩膜板及掩膜板组件
KR20220055538A (ko) * 2020-10-26 2022-05-04 삼성디스플레이 주식회사 마스크 어셈블리 및 마스크 어셈블리의 제작 방법
CN112662994B (zh) * 2020-12-04 2023-04-25 合肥维信诺科技有限公司 掩膜版及其制备方法
CN113215529B (zh) * 2021-04-30 2023-05-12 合肥维信诺科技有限公司 精密掩膜板和掩膜板组件
CN114032499A (zh) * 2021-11-18 2022-02-11 昆山国显光电有限公司 精密掩膜板和掩膜板
CN114107897A (zh) * 2021-11-29 2022-03-01 合肥维信诺科技有限公司 掩膜板及掩膜组件
US20230374646A1 (en) * 2022-05-17 2023-11-23 Samsung Display Co., Ltd. Mask for depositing emission layer, method of manufacturing the mask, and display apparatus manufactured using the mask
CN114645246B (zh) * 2022-05-23 2022-10-21 浙江众凌科技有限公司 一种金属遮罩
CN115433900B (zh) * 2022-09-29 2024-02-20 昆山国显光电有限公司 掩膜板和蒸镀装置
CN115449747B (zh) * 2022-10-19 2024-02-13 云谷（固安）科技有限公司 精密掩模版及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6086305B2 (ja) * 2013-01-11 2017-03-01 大日本印刷株式会社 蒸着マスクの製造方法および蒸着マスク
CN107587106A (zh) * 2017-11-02 2018-01-16 京东方科技集团股份有限公司 掩模板、蒸镀掩模板组件、蒸镀设备及掩模板的制作方法
CN107815641A (zh) * 2017-10-25 2018-03-20 信利（惠州）智能显示有限公司 掩膜板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002084689A1 (fr) * 2001-04-09 2002-10-24 Fujitsu Limited Procede de fabrication d'un mur de cloison pour les panneaux d'affichage sur ecrans plasma au moyen du jet de sable
JP2007039777A (ja) * 2005-08-05 2007-02-15 Tohoku Pioneer Corp 成膜用マスク、自発光パネルの製造方法、および自発光パネル
KR101117645B1 (ko) * 2009-02-05 2012-03-05 삼성모바일디스플레이주식회사 마스크 조립체 및 이를 이용한 평판표시장치용 증착 장치
CN103589996A (zh) * 2013-10-09 2014-02-19 昆山允升吉光电科技有限公司 一种掩模板
CN104330954B (zh) * 2014-08-25 2016-06-01 京东方科技集团股份有限公司 掩膜版、掩膜版组、像素的制作方法及像素结构
KR102541449B1 (ko) * 2015-12-22 2023-06-09 삼성디스플레이 주식회사 박막 증착용 마스크 어셈블리
CN105549321B (zh) * 2016-02-18 2020-01-31 京东方科技集团股份有限公司 一种掩模板罩及掩模板
CN205662587U (zh) * 2016-05-27 2016-10-26 合肥鑫晟光电科技有限公司 掩膜版、掩膜组件及显示装置
WO2019038861A1 (ja) * 2017-08-23 2019-02-28 シャープ株式会社 蒸着マスク、表示パネルの製造方法、及び表示パネル
CN107740040B (zh) * 2017-09-08 2019-09-24 上海天马有机发光显示技术有限公司 掩膜版组件及蒸镀装置
CN107994054B (zh) 2017-11-07 2020-05-29 上海天马有机发光显示技术有限公司 一种有机电致发光显示面板、其制作方法及显示装置
CN108004504B (zh) * 2018-01-02 2019-06-14 京东方科技集团股份有限公司 一种掩膜板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6086305B2 (ja) * 2013-01-11 2017-03-01 大日本印刷株式会社 蒸着マスクの製造方法および蒸着マスク
CN107815641A (zh) * 2017-10-25 2018-03-20 信利（惠州）智能显示有限公司 掩膜板
CN107587106A (zh) * 2017-11-02 2018-01-16 京东方科技集团股份有限公司 掩模板、蒸镀掩模板组件、蒸镀设备及掩模板的制作方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3623495A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113403573A (zh) * 2021-01-08 2021-09-17 达运精密工业股份有限公司 遮罩

Also Published As

Publication number Publication date
JP7029477B2 (ja) 2022-03-03
KR102257213B1 (ko) 2021-05-27
EP3623495A4 (en) 2020-08-26
KR20200013782A (ko) 2020-02-07
TWI690107B (zh) 2020-04-01
EP3623495A1 (en) 2020-03-18
US20210355572A1 (en) 2021-11-18
CN108642440B (zh) 2019-09-17
JP2020523478A (ja) 2020-08-06
TW201907600A (zh) 2019-02-16
CN108642440A (zh) 2018-10-12

Similar Documents

Publication Publication Date Title
WO2019218536A1 (zh) 掩膜板及掩膜组件
WO2019218605A1 (zh) 掩膜板
US10950666B2 (en) Pixel structure, OLED display screen and evaporation mask
JP2020523478A5 (zh)
KR102130546B1 (ko) 마스크 조립체 및 이를 이용한 평판표시장치용 증착 장치
TWI637073B (zh) 蒸鍍遮罩、附有框架之蒸鍍遮罩、有機半導體元件之製造方法及圖案之製造方法
WO2017215286A1 (zh) 掩膜板以及掩膜板的组装方法
TWI595104B (zh) A method of manufacturing an imposition vapor deposition mask, and a method of manufacturing an organic semiconductor device
TWI671414B (zh) 蒸鍍遮罩、蒸鍍遮罩準備體、蒸鍍遮罩之製造方法、及有機半導體元件之製造方法
TW201445000A (zh) 蒸鍍遮罩、蒸鍍遮罩準備體、蒸鍍遮罩之製造方法、及有機半導體元件之製造方法
US20180080114A1 (en) Evaporation mask, method of patterning substrate using the same, and display substrate
WO2017117999A1 (zh) 金属掩模板及其制作方法
WO2021036301A1 (zh) 掩膜板及掩膜板制备方法
WO2018019045A1 (zh) 掩膜板及其制作方法、掩膜组件
WO2021036067A1 (zh) 掩模板及制备方法、精细金属掩模板、掩模装置及使用方法
WO2017193646A1 (zh) 一种掩膜板
WO2020113751A1 (zh) 一种掩膜板
WO2021047610A1 (zh) 掩膜装置及其制造方法、蒸镀方法、显示装置
WO2016145763A1 (zh) 一种金属掩膜板及其制作出的有机电致发光显示器件
US20210404048A1 (en) Mask sheet and pixel structure
WO2019080875A1 (zh) 掩膜板
WO2021073191A1 (zh) 一种掩膜版
US11326245B2 (en) Masks for fabrication of organic lighting-emitting diode devices
WO2021065981A1 (ja) 蒸着マスク、蒸着マスクの製造方法、および、表示装置の製造方法
JP2024509238A (ja) マスクプレート及びマスク装置

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2019568386

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18918475

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018918475

Country of ref document: EP

Effective date: 20191212

ENP Entry into the national phase

Ref document number: 20207001822

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE