WO2016145763A1 - 一种金属掩膜板及其制作出的有机电致发光显示器件 - Google Patents

一种金属掩膜板及其制作出的有机电致发光显示器件 Download PDF

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WO2016145763A1
WO2016145763A1 PCT/CN2015/085758 CN2015085758W WO2016145763A1 WO 2016145763 A1 WO2016145763 A1 WO 2016145763A1 CN 2015085758 W CN2015085758 W CN 2015085758W WO 2016145763 A1 WO2016145763 A1 WO 2016145763A1
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region
strip
same
condition
slits
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PCT/CN2015/085758
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English (en)
French (fr)
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林治明
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京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Priority to US14/905,397 priority Critical patent/US20170092861A1/en
Publication of WO2016145763A1 publication Critical patent/WO2016145763A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Definitions

  • the present invention relates to the field of display technology, and more particularly to a metal mask and an organic electroluminescent display device produced thereby.
  • OLEDs organic electroluminescence display devices
  • Evaporation technology is a key technology in the manufacturing process of OLED displays.
  • OLED mainly uses red, green and blue light-emitting layers to achieve better luminous efficiency, while evaporation technology is mainly applied in the film formation process of red, green and blue light-emitting organic light-emitting materials.
  • the high-precision metal mask (FMM) is used for evaporation, and the red, green and blue organic light-emitting materials are plated side by side in each pixel unit of the OLED panel. In each of the pixel units of the red, green, and blue color organic light-emitting materials are respectively formed.
  • the metal mask consisting of the strip slit 001 is During the upward movement of the magnetic separator 002, it is susceptible to being affected by the magnetic force of the magnetic separator 002, since the shortest distance m of the strip slit 001 and the side frame 003 parallel thereto in the metal mask is generally larger than the adjacent strip.
  • the distance n between the slits 001 is large, and the generated magnetic force is large, which causes deformation of the plurality of strip slits 001 which are close to the side frame 003, which is disadvantageous for preparing a high-resolution OLED display. Therefore, as shown in FIG. 1b, at least three strip slits adjacent to the side borders are disposed in the corresponding non-display area A, so that the strip slits corresponding to the display area B are not deformed, but the OLED is limited thereby.
  • the width of the display border is provided.
  • an embodiment of the present invention provides a metal mask and an organic device thereof.
  • the electroluminescent display device allows the second area to occupy less area and achieve a narrow border in space.
  • an embodiment of the present invention provides a metal mask including: a substrate, a first region disposed on the substrate for forming a display image, and a second portion respectively located at left and right sides of the first region a first strip-shaped slit extending in the column direction and equidistantly parallel to each other, and at least three strips and the first strip-shaped slit are disposed in each of the second regions Sewing a second strip of slits parallel to each other;
  • Condition 1 the width of the second strip slit is smaller than the width of the first strip slit
  • Condition 3 the width of the side region is narrowed, and the side region is between the second strip slit and the side frame of the second region in the second region which is adjacent to the side frame of the metal mask
  • the side frame is a frame parallel to the extending direction of the second strip slit.
  • the width of each of the second strip slits is the same.
  • the distance between the adjacent second strip slits in the same second region is the same; Or, the distance between the adjacent second strip slits in the same second region is sequentially increased or decreased along the direction in which the side regions are directed to the first region.
  • the width of the second strip slits in the same second region sequentially increases in a direction in which the side regions point toward the first region.
  • a distance between the adjacent second strip slits in the same second region is sequentially increased in a direction in which the side regions are directed toward the first region.
  • the above metal provided in one embodiment of the present invention
  • the widths of the second strip slits are the same;
  • the distance between the adjacent second strip slits in the same second region is the same; or between the adjacent second strip slits in the same second region The distance is sequentially increased along the direction in which the side regions point to the first region.
  • the distance between the adjacent second strip slits in the same second region is the same; or between the adjacent second strip slits in the same second region The distance is sequentially increased along the direction in which the side regions point to the first region.
  • the width of the second strip slit is greater than 5 ⁇ m and less than 35 ⁇ m.
  • the second strip when the condition 2 is satisfied, narrow in the same second region
  • the distance between the slits is less than 70 ⁇ m.
  • the width of the side region is less than 2.45 mm.
  • Another embodiment of the present invention further provides an organic electroluminescent display device fabricated using the above metal mask according to an embodiment of the present invention.
  • the invention provides a metal mask and an organic electroluminescent display device thereof, the metal mask comprising: a substrate, a first region disposed on the substrate for forming a display image, and respectively located a second region on the left and right sides of the first region; a plurality of first slits extending in the column direction and equidistantly parallel to each other are disposed in the first region, and at least three and first are disposed in each of the second regions a second strip slit parallel to the strip slits; wherein at least two of the following three conditions are satisfied: the width of the second strip slit is smaller than the width of the first strip slit; and the phase in the same second region The distance between the adjacent second slits is smaller than the distance between the adjacent first slits; the width of the side regions is narrowed, and the side regions are the nearest metal masks in the second region Second strip slit and side edge of the side border The area between the boxes.
  • the second strip slit can be relieved of the influence of the magnetic field, and the second Areas with a small area occupying a narrow border in space.
  • 1a is a schematic structural view of a metal mask and a magnetic separator in the prior art
  • 1b is a schematic structural view of a metal mask in the prior art
  • FIGS. 2a to 2d are schematic structural views of a metal mask provided by an embodiment of the present invention.
  • FIG. 3a is a schematic structural view of the metal mask shown in FIG. 2d combined with a magnetic separator;
  • Figure 3b is a partial enlarged view of Figure 3a.
  • the metal mask includes: a substrate 100, a first region C disposed on the substrate 100 for forming a display image, and a second region D located on the left and right sides of the first region C; a plurality of first slits 101 extending in the column direction and equidistantly parallel to each other are disposed in the first region C, and in each of the second regions D Providing at least three second strip slits 102 parallel to the first strip slits 101; wherein
  • Condition 1 the width a of the second strip slit 102 is smaller than the width b of the first strip slit 101;
  • the side frame 103 is a region parallel to the extending direction of the second strip slit 102, which is the region between the second strip slit 102 of the side frame 103 of the metal mask and the side frame 103.
  • the above metal mask provided by one embodiment of the present invention passes through the width a of the second strip slit 102, the distance c between the adjacent second strip slits 102 in the same second region D, and the side.
  • the width e of the edge region E is adjusted.
  • the width a of the second strip slit 102 is smaller than the first one.
  • the width b of the strip slit 101, the distance c between the adjacent second strip slits 102 in the same second region D is smaller than the distance d between the adjacent first strip slits 101, and the side
  • the width a of each of the second strip slits 102 may be the same, that is, the width of each of the second strip slits 102 may be adjusted, and each second strip may be The width of the slits 102 are all reduced by the same amount of values.
  • the distance c between the adjacent second strip slits 102 in the two regions D may be the same, that is, the distance between the adjacent second strip slits 102 in the same second region D may be performed. Adjustment, the distance between the adjacent second strip slits 102 in the same second region D can be reduced by the same amount value.
  • the distance c between the adjacent second strip slits 102 in the same second region D may be sequentially increased or decreased along the direction of the side region E pointing to the first region C, that is, the same second
  • the distance between adjacent second strip slits 102 in the region D is adjusted, assuming that the second strip slits 102 adjacent in the same second region D along the direction of the side region E pointing to the first region C
  • the distance between them is c 1 , c 2 , and c 3 respectively .
  • c 1 can be reduced by 3 ⁇ m, c 2 by 2 ⁇ m, c 3 by 1 ⁇ m, or It is possible to reduce c 1 by 1 ⁇ m, c 2 by 2 ⁇ m, and c 3 by 3 ⁇ m.
  • the width a of the second strip slit 102 is smaller than the first one.
  • the width b of the strip slit 101, the distance e of the side region E is narrowed, and the distance c between the adjacent second strip slits 102 in the same second region D is still equal to the adjacent first strip
  • the width a of each of the second strip slits 102 may be the same, that is, the width of each of the second strip slits 102 may be adjusted, and each second strip may be
  • the widths of the slits 102 are all reduced by the same number of values; or, the width a of the second strip slits 102 in the same second region D may be sequentially increased along the direction of the side regions E pointing to the first region C.
  • the width of the second strip slit 102 in the same second region D is adjusted, assuming a second strip in the same second region D along the direction in which the side region E points toward the first region C
  • the widths of the slits 102 are a 1 , a 2 , and a 3 , respectively.
  • a 1 can be reduced by 3 ⁇ m, a 2 by 2 ⁇ m, and a 3 by 1 ⁇ m.
  • the distance c between the slits 102 is smaller than the distance d between the adjacent first strip slits 101, the width e of the side region E is narrowed, and the width a of the second strip slit 102 is still equal to the first
  • the distance c between the adjacent second strip slits 102 in the same second region D may be the same, that is, the inner phase in the same second region D
  • the distance between the adjacent second strip slits 102 is adjusted to reduce the distance between the adjacent second strip slits 102 in the same second region D by the same amount.
  • the distance c between the adjacent second strip slits 102 in the same second region D may be sequentially increased along the direction in which the side region E points toward the first region C. That is, the distance between the adjacent second strip slits 102 in the same second region D is adjusted, and it is assumed that the direction along the side region E pointing to the first region C is in the same second region D.
  • the distance between the adjacent second strip slits 102 is c 1 , c 2 , and c 3 , respectively.
  • the width a of the second strip slit 102 is smaller than the distance d between the adjacent first strip slits 101
  • the width e of the side area E is narrowed
  • the width a of each of the second strip slits 102 may be the same and the distance c between the adjacent second strip slits 102 in the same second area D All can be the same, that is, the width of each second strip slit 102 and the distance between adjacent second strip slits 102 in the same second region D can be adjusted, and each second strip can be The width of the slit 102 is reduced by the same number value and the distance between the adjacent second strip slits 102 in the same second
  • each of the second strip slits 102 and the distance between the adjacent second strip slits 102 in the same second region D are adjusted, and each of the second strip slits 102 can be The widths are all reduced by the same number of values, and it is assumed that the distance between the adjacent second strip slits 102 in the same second region D in the direction in which the side region E points toward the first region C is c 1 when, c 2, c 3, of c 1, c 2, c 3 is adjusted, c 1 can be reduced 3 ⁇ m, c 2 decreases 2 ⁇ m, c 3 is reduced 1 ⁇ m.
  • the width of the second strip slit 102 in the same second region D a direction along the side area E pointing to the first area C may be sequentially increased and the distance c between the adjacent second strip slits 102 in the same second area D may be the same, that is, for each The width of the two slits 102 and the distance between the adjacent second strips 102 in the same second region D are adjusted, assuming that the direction along the side region E pointing to the first region C is the same in the second
  • the width of the second strip slit 102 in the region D is a 1 , a 2 , a 3 , respectively.
  • a 1 can be reduced by 3 ⁇ m
  • a 2 can be reduced by 2 ⁇ m
  • a 3 is reduced by 1 ⁇ m
  • the distance between the adjacent second strip slits 102 in the same second region D can be reduced by the same amount value; or, in the same second region D
  • the width a of the second strip slit 102 may be sequentially increased along the direction of the side region E directed to the first region C and may be in the same second region D.
  • Distance c along a direction of the side areas E between the second slit 102 towards the first strip-shaped region C may be sequentially incremented.
  • the width between each second strip slit 102 and the distance between the adjacent second strip slits 102 in the same second region D are adjusted, assuming that the side region E points to the first region
  • the width of the second strip slit 102 in the same second region D in the direction of C is a 1 , a 2 , a 3 , respectively, and when a 1 , a 2 , a 3 are adjusted, a 1 can be reduced. 3 ⁇ m, a 2 is reduced by 2 ⁇ m, a 3 is decreased by 1 ⁇ m, and the distance between adjacent second strip slits 102 in the same second region D in the direction in which the side region E is directed to the first region C is assumed.
  • c 1 can be reduced 3 ⁇ m
  • c 2 decreases 2 ⁇ m
  • c 3 is reduced 1 ⁇ m.
  • the width b of the first strip slit 101 is generally 35 ⁇ m to 45. ⁇ m, when the width a of the second strip slit 102 is smaller than the width b of the first strip slit 101, the width a of the second strip slit 102 may be greater than 5 ⁇ m and less than 35 ⁇ m.
  • the width d of the second strip slit 102 is generally 70 ⁇ m to 80.5 ⁇ m, when the same second region D
  • the distance c between the adjacent second strip slits 102 is smaller than the distance d between the adjacent first strip slits 101, the second strip slits adjacent in the same second region D
  • the distance c between 102 may be less than 70 ⁇ m.
  • the width of the side region is generally 2.45 mm to 2.55 mm, when the width of the side region is narrowed, The width of the side areas can be less than 2.45 mm.
  • the metal mask provided by the embodiment of the present invention is described in detail below by two specific examples.
  • the width b of the first strip slit 101 of the metal mask is 35 ⁇ m, and the distance d between the adjacent first strip slits 101 is 80.5 ⁇ m, and the second strip slit
  • the width a of the 102 is 25 ⁇ m
  • the distance c between the adjacent second strip slits 102 in the same second region D is 80.5 ⁇ m
  • the width e of the side region E is less than 2.45 mm.
  • the frame of the device product is reduced by 0.06mm.
  • the width b of the first strip slit 101 of the metal mask is 35 ⁇ m, and the distance d between the adjacent first strip slits 101 is 80.5 ⁇ m, and the second strip slit
  • the width a of 102 is less than 35 ⁇ m
  • the distance c between adjacent second strip slits 102 in the same second region D is less than 80.5 ⁇ m
  • the width e of the side region E is less than 2.45 mm.
  • the metal mask of this design is combined with the magnetic spacer 104, and in the process of being moved upward by the magnetic spacer 104, it is assumed that three strips are provided in each of the second regions D.
  • a second strip slit 102 in which the strip slits 101 are parallel to each other, and regions between the adjacent second strip slits 102 are respectively R 1 , R 2 , and R 3 , and the dotted line is set to be adjacent to the second slit
  • the center of the region between the strip slits 102 is subjected to a force line.
  • the interaction force F 3 , R 2 imparted by the right-hand side region E is the interaction force FD 23 , and the left-hand force is close to the region between the adjacent first slits 101 of R 3 .
  • the direction along the side area E pointing to the first area C may be sequentially increased, that is, when R 1 ⁇ R 2
  • the sum of F 3 and FD 23 is small, and the amount of enthalpy is left for the subsequent increase of F 3 , so that the balance of the forces on both sides of R 3 is made possible, and R 3 is not deformed, and is not deformed.
  • the width a of the second strip slit 102 is narrowed, and the distance c between the adjacent second strip slits 102 in the same second region D is correspondingly reduced, and finally the outermost two are The second strip slit is brought closer to the effective display area, and the metal mask is used for vapor deposition, and the fabricated device has the effect of forming a narrow bezel.
  • another embodiment of the present invention provides an organic electroluminescent display device fabricated by using the above metal mask according to an embodiment of the present invention.
  • the invention provides a metal mask and an organic electroluminescent display device thereof, the metal mask comprising: a substrate, a first region disposed on the substrate for forming a display image, and respectively located a second region on the left and right sides of the first region; a plurality of first slits extending in the column direction and equidistantly parallel to each other are disposed in the first region, and at least three and first are disposed in each of the second regions a second strip slit parallel to the strip slits; wherein at least two of the following three conditions are satisfied: the width of the second strip slit is smaller than the width of the first strip slit; and the phase in the same second region The distance between the adjacent second slits is smaller than the distance between the adjacent first slits; the width of the side regions is narrowed, and the side regions are the nearest metal masks in the second region The area between the second strip of the side border and the side border.
  • the prior art can not only alleviate the influence of the magnetic field of the second slit, but also It is possible to make the second area occupy less area and achieve a narrow border in space.

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Abstract

一种金属掩模板，包括：基板(100)，设置在基板(100)上的第一区域(C)和分别位于第一区域(C)左右两侧的第二区域(D)；在第一区域(C)内设置有多条沿列方向延伸且相互平行的第一条状狭缝(101)，在各第二区域(D)内设置有至少三条与第一条状狭缝(101)相互平行的第二条状狭缝(102)；其中，至少满足以下三个条件之二：第二条状狭缝(102)的宽度(a)小于第一条状狭缝(101)的宽度(b)；在同一第二区域(D)内相邻的第二条状狭缝(102)之间的距离(c)小于相邻的第一条状狭缝(101)之间的距离(d)；侧边区域(E)的宽度(e)变窄。以及一种使用该金属掩模板制作出的有机电致发光显示器件。

Description

一种金属掩膜板及其制作出的有机电致发光显示器件 技术领域
本发明涉及显示技术领域，尤指一种金属掩膜板及其制作出的有机电致发光显示器件。
背景技术
目前，有机电致发光显示器件(Organic Electroluminesecent Display，OLED)凭借其低功耗、高色饱和度、广视角、薄厚度、能实现柔性化等优异性能，已经逐渐成为显示领域的主流。
蒸镀技术是OLED显示屏制造过程中的关键技术。OLED主要是采用红、绿、蓝三色发光层来达到比较好的发光效率，而蒸镀技术主要是应用在红、绿、蓝三色发光层有机发光材料的成膜过程中。在成膜过程中，主要采用高精度金属掩膜板(Fine Metal Mask，FMM)进行蒸镀，一次一色分别将红、绿、蓝三种颜色有机发光材料并排镀在OLED面板的每个像素单元中，分别形成沉积红、绿、蓝三种颜色有机发光材料的各像素单元中。在OLED的蒸镀工艺中，通常需要采用磁隔板吸附整个金属掩膜板来改善金属掩膜板的下垂量，而如图1a所示，由条状狭缝001组成的金属掩膜板在被磁隔板002吸附向上移动的过程中，易受到被磁隔板002磁力的影响，由于金属掩膜板中条状狭缝001与其平行的侧边框003的最短距离m一般比相邻的条状狭缝001之间的距离n大，产生的磁力大，导致与侧边框003的距离相近的多条条状狭缝001发生变形，不利于制备高分辨率的OLED显示屏。因此，如图1b所示，在对应非显示区域A需设置有与侧边框相邻的至少三条条状狭缝，使对应显示区域B的条状狭缝不会发生变形，但这样限制了OLED显示屏边框的宽度。
因此，如何在满足对应显示区域的条状狭缝在磁场的作用下不会发生变形的同时，减小OLED显示屏的边框，实现窄边框，是本领域技术人员亟需解决的技术问题。
发明内容
有鉴于此，本发明实施例提供一种金属掩膜板及其制作出的有机 电致发光显示器件，使第二区域占用较少的区域，在空间上实现窄边框。
因此，本发明一个实施例提供了一种金属掩膜板，包括：基板，设置在所述基板上的用于形成显示图像的第一区域和分别位于所述第一区域左右两侧的第二区域；在所述第一区域内设置有多条沿列方向延伸且等间距相互平行的第一条状狭缝，在各所述第二区域内设置有至少三条与所述第一条状狭缝相互平行的第二条状狭缝；其中，
至少满足以下三个条件之二：
条件一：所述第二条状狭缝的宽度小于所述第一条状狭缝的宽度；
条件二：在同一所述第二区域内相邻的所述第二条状狭缝之间的距离小于相邻的所述第一条状狭缝之间的距离；
条件三：侧边区域的宽度变窄，所述侧边区域为所述第二区域内最邻近所述金属掩膜板的侧边框的所述第二条状狭缝与所述侧边框之间的区域，所述侧边框为与所述第二条状狭缝延伸方向平行的边框。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属掩膜板中，当同时满足所述条件一和所述条件二时，各所述第二条状狭缝的宽度均相同。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属掩膜板中，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离均相同；或，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离沿所述侧边区域指向所述第一区域的方向依次递增或递减。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属掩膜板中，当同时满足所述条件一和所述条件三时，各所述第二条状狭缝的宽度均相同；或，
在同一所述第二区域内的所述第二条状狭缝的宽度沿所述侧边区域指向所述第一区域的方向依次递增。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属掩膜板中，当同时满足所述条件二和所述条件三时，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离均相同；或，
在同一所述第二区域内相邻的所述第二条状狭缝之间的距离沿所述侧边区域指向所述第一区域的方向依次递增。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属 掩膜板中，当同时满足所述条件一、所述条件二和所述条件三时，各所述第二条状狭缝的宽度均相同；
在同一所述第二区域内相邻的所述第二条状狭缝之间的距离均相同；或，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离沿所述侧边区域指向所述第一区域的方向依次递增。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属掩膜板中，当同时满足所述条件一、所述条件二和所述条件三时，在同一所述第二区域内的所述第二条状狭缝的宽度沿所述侧边区域指向所述第一区域的方向依次递增；
在同一所述第二区域内相邻的所述第二条状狭缝之间的距离均相同；或，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离沿所述侧边区域指向所述第一区域的方向依次递增。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属掩膜板中，在满足所述条件一时，所述第二条状狭缝的宽度大于5μm且小于35μm。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属掩膜板中，在满足所述条件二时，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离小于70μm。
在一种可能的实现方式中，在本发明一个实施例提供的上述金属掩膜板中，在满足所述条件三时，所述侧边区域的宽度小于2.45mm。
本发明另一个实施例还提供了一种本发明一个实施例提供的使用上述金属掩膜板制作出的有机电致发光显示器件。
本发明实施例的有益效果包括：
本发明实施例提供的一种金属掩膜板及其制作出的有机电致发光显示器件，该金属掩膜板包括：基板，设置在基板上的用于形成显示图像的第一区域和分别位于第一区域左右两侧的第二区域；在第一区域内设置有多条沿列方向延伸且等间距相互平行的第一条状狭缝，在各第二区域内设置有至少三条与第一条状狭缝相互平行的第二条状狭缝；其中，至少满足以下三个条件之二：第二条状狭缝的宽度小于第一条状狭缝的宽度；在同一第二区域内相邻的第二条状狭缝之间的距离小于相邻的第一条状狭缝之间的距离；侧边区域的宽度变窄，侧边区域为第二区域内最邻近金属掩膜板的侧边框的第二条状狭缝与侧边 框之间的区域。通过对第二条状狭缝的宽度、同一第二区域内相邻的第二条状狭缝之间的距离以及侧边区域的宽度进行调整，当满足以上至少两个条件时，在第一区域内的第一条状狭缝在磁场的作用下受力平衡，不会发生变形的基础上，相比现有技术不仅可以缓解第二条状狭缝受磁场的影响，还可以使第二区域占用较少的区域，在空间上实现窄边框。
附图说明
图1a为现有技术中金属掩膜板与磁隔板组合后的结构示意图；
图1b为现有技术中金属掩膜板的结构示意图；
图2a至图2d分别为本发明实施例提供的金属掩膜板的结构示意图；
图3a为图2d所示的金属掩膜板与磁隔板组合后的结构示意图；
图3b为图3a中局部放大图。
具体实施方式
下面结合附图，对本发明实施例提供的金属掩膜板及其制作出的有机电致发光显示器件的具体实施方式进行详细地说明。
其中，附图均采用非常简化的形式且均使用非精准的比率，目的只是示意说明本发明内容。
本发明一个实施例提供了一种金属掩膜板，如图2a至图2d所示，该金属掩膜板包括：基板100，设置在基板100上的用于形成显示图像的第一区域C和分别位于第一区域C左右两侧的第二区域D；在第一区域C内设置有多条沿列方向延伸且等间距相互平行的第一条状狭缝101，在各第二区域D内设置有至少三条与第一条状狭缝101相互平行的第二条状狭缝102；其中，
至少满足以下三个条件之二：
条件一：第二条状狭缝102的宽度a小于第一条状狭缝101的宽度b；
条件二：在同一第二区域D内相邻的第二条状狭缝102之间的距离c小于相邻的第一条状狭缝101之间的距离d；
条件三：侧边区域E的宽度变窄，该侧边区域E为第二区域D内 最邻近金属掩膜板的侧边框103的第二条状狭缝102与侧边框103之间的区域，侧边框103为与第二条状狭缝102延伸方向平行的边框。
在本发明一个实施例提供的上述金属掩膜板，通过对第二条状狭缝102的宽度a、同一第二区域D内相邻的第二条状狭缝102之间的距离c以及侧边区域E的宽度e进行调整，当满足以上至少两个条件时，在第一区域C中第一条状狭缝101在磁场的作用下受力平衡，不会发生变形的基础上，相比现有技术不仅可以缓解第二条状狭缝102受磁场的影响，还可以使第二区域D占用较少的区域，在空间上实现窄边框。
在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，如图2a所示，当同时满足条件一和条件二时，即第二条状狭缝102的宽度a小于第一条状狭缝101的宽度b，在同一第二区域D内相邻的第二条状狭缝102之间的距离c小于相邻的第一条状狭缝101之间的距离d，以及侧边区域E的宽度e不变时，各第二条状狭缝102的宽度a均可以相同，也就是说，对各第二条状狭缝102的宽度进行调整，可以将各第二条状狭缝102的宽度均减小相同的数量值。
进一步地，在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，当同时满足条件一和条件二且各第二条状狭缝102的宽度a均相同时，在同一第二区域D内相邻的第二条状狭缝102之间的距离c均可以相同，也就是说，对在同一第二区域D内相邻的第二条状狭缝102之间的距离进行调整，可以将在同一第二区域D内相邻的第二条状狭缝102之间的距离均减小相同的数量值。或者，在同一第二区域D内相邻的第二条状狭缝102之间的距离c沿侧边区域E指向第一区域C的方向可以依次递增或递减，也就是说，对同一第二区域D内相邻的第二条状狭缝102之间的距离进行调整，假设沿侧边区域E指向第一区域C的方向在同一第二区域D内相邻的第二条状狭缝102之间的距离分别为c1、c2、c3，对c1、c2、c3进行调整时，可以将c1减小3μm，c2减小2μm，c3减小1μm，或者也可以将c1减小1μm，c2减小2μm，c3减小3μm。
在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，如图2b所示，当同时满足条件一和条件三时，即第二条状狭缝102的宽度a小于第一条状狭缝101的宽度b，侧边区域E的距离e变窄，以 及在同一第二区域D内相邻的第二条状狭缝102之间的距离c仍等于相邻的第一条状狭缝101之间的距离d时，各第二条状狭缝102的宽度a均可以相同，也就是说，对各第二条状狭缝102的宽度进行调整，可以将各第二条状狭缝102的宽度均减小相同的数量值；或者，在同一第二区域D内的第二条状狭缝102的宽度a沿侧边区域E指向第一区域C的方向可以依次递增。也就是说，对在同一第二区域D内的第二条状狭缝102的宽度进行调整，假设沿侧边区域E指向第一区域C的方向在同一第二区域D内的第二条状狭缝102的宽度分别为a1、a2、a3，对a1、a2、a3进行调整时，可以将a1减小3μm，a2减小2μm，a3减小1μm。
在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，如图2c所示，当同时满足条件二和条件三时，即在同一第二区域D内相邻的第二条状狭缝102之间的距离c小于相邻的第一条状狭缝101之间的距离d，侧边区域E的宽度e变窄，以及第二条状狭缝102的宽度a仍等于第一条状狭缝101的宽度b时，在同一第二区域D内相邻的第二条状狭缝102之间的距离c均可以相同，也就是说，对在同一第二区域D内相邻的第二条状狭缝102之间的距离进行调整，可以将在同一第二区域D内相邻的第二条状狭缝102之间的距离均减小相同的数量值。或者，在同一第二区域D内相邻的第二条状狭缝102之间的距离c沿侧边区域E指向第一区域C的方向可以依次递增。也就是说，对在同一第二区域D内相邻的第二条状狭缝102之间的距离进行调整，假设沿侧边区域E指向第一区域C的方向在同一第二区域D内相邻的第二条状狭缝102之间的距离分别为c1、c2、c3，对c1、c2、c3进行调整时，可以将c1减小3μm，c2减小2μm，c3减小1μm。
在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，如图2d所示，当同时满足条件一、条件二和条件三时，即第二条状狭缝102的宽度a小于第一条状狭缝101的宽度b，在同一第二区域D内相邻的第二条状狭缝102之间的距离c小于相邻的第一条状狭缝101之间的距离d，以及侧边区域E的宽度e变窄时，各第二条状狭缝102的宽度a均可以相同且在同一第二区域D内相邻的第二条状狭缝102之间的距离c均可以相同，也就是说，对各第二条状狭缝102的宽度和在同一第二区域D内相邻的第二条状狭缝102之间的距离进行调整， 可以将各第二条状狭缝102的宽度均减小相同的数量值和在同一第二区域D内相邻的第二条状狭缝102之间的距离均减小相同的数量值；或，各第二条状狭缝102的宽度a均可以相同且在同一第二区域D内相邻的第二条状狭缝102之间的距离c沿侧边区域E指向第一区域C的方向可以依次递增。也就是说，对各第二条状狭缝102的宽度和在同一第二区域D内相邻的第二条状狭缝102之间的距离进行调整，可以将各第二条状狭缝102的宽度均减小相同的数量值，并且，假设沿侧边区域E指向第一区域C的方向在同一第二区域D内相邻的第二条状狭缝102之间的距离分别为c1、c2、c3，对c1、c2、c3进行调整时，可以将c1减小3μm，c2减小2μm，c3减小1μm。
在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，当同时满足条件一、条件二和条件三时，在同一第二区域D内的第二条状狭缝102的宽度a沿侧边区域E指向第一区域C的方向可以依次递增且在同一第二区域D内相邻的第二条状狭缝102之间的距离c均可以相同，也就是说，对各第二条状狭缝102的宽度和在同一第二区域D内相邻的第二条状狭缝102之间的距离进行调整，假设沿侧边区域E指向第一区域C的方向在同一第二区域D内的第二条状狭缝102的宽度分别为a1、a2、a3，对a1、a2、a3进行调整时，可以将a1减小3μm，a2减小2μm，a3减小1μm，并且，可以将在同一第二区域D内相邻的第二条状狭缝102之间的距离均减小相同的数量值；或，在同一第二区域D内的第二条状狭缝102的宽度a沿侧边区域E指向第一区域C的方向可以依次递增且在同一第二区域D内相邻的第二条状狭缝102之间的距离c沿侧边区域E指向第一区域C的方向可以依次递增。也就是说，对各第二条状狭缝102的宽度和在同一第二区域D内相邻的第二条状狭缝102之间的距离进行调整，假设沿侧边区域E指向第一区域C的方向在同一第二区域D内的第二条状狭缝102的宽度分别为a1、a2、a3，对a1、a2、a3进行调整时，可以将a1减小3μm，a2减小2μm，a3减小1μm，并且，假设沿侧边区域E指向第一区域C的方向在同一第二区域D内相邻的第二条状狭缝102之间的距离分别为c1、c2、c3，对c1、c2、c3进行调整时，可以将c1减小3μm，c2减小2μm，c3减小1μm。
在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，在满足条件一时，由于第一条状狭缝101的宽度b一般为35μm至45 μm，当第二条状狭缝102的宽度a小于第一条状狭缝101的宽度b时，第二条状狭缝102的宽度a可以大于5μm且小于35μm。
在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，在满足条件二时，由于第二条状狭缝102的宽度d一般为70μm至80.5μm，当同一第二区域D内相邻的第二条状狭缝102之间的距离c小于相邻的第一条状狭缝101之间的距离d时，在同一第二区域D内相邻的第二条状狭缝102之间的距离c可以小于70μm。
在具体实施时，在本发明一个实施例提供的上述金属掩膜板中，在满足条件三时，由于侧边区域的宽度一般为2.45mm至2.55mm，当侧边区域的宽度变窄时，侧边区域的宽度可以小于2.45mm。
下面以两个具体的实例详细的说明本发明实施例提供的金属掩膜板。
实例一：
如图2b所示，该金属掩膜板的第一条状狭缝101的宽度b为35μm，相邻的第一条状狭缝101之间的距离d为80.5μm，第二条状狭缝102的宽度a为25μm，在同一第二区域D内相邻的第二条状狭缝102之间的距离c为80.5μm，侧边区域E的宽度e小于2.45mm。
这时候若是把此种设计的金属掩膜板用于蒸镀，那么蒸镀的有机物总宽度比原来缩小60μm(由于6*(35-25)＝60μm)，若是封装之后形成有机电致发光显示器件产品的边框会减小了0.06mm。
实例二：
如图2d所示，该金属掩膜板的第一条状狭缝101的宽度b为35μm，相邻的第一条状狭缝101之间的距离d为80.5μm，第二条状狭缝102的宽度a小于35μm，在同一第二区域D内相邻的第二条状狭缝102之间的距离c小于80.5μm，侧边区域E的宽度e小于2.45mm。
如图3a和图3b所示，此种设计的金属掩膜板与磁隔板104结合，在被磁隔板104吸附向上移动的过程中，假设在各第二区域D内设置有三条与第一条状狭缝101相互平行的第二条状狭缝102，相邻的第二条状狭缝102之间区域分别为R1、R2、R3，虚线设定为相邻的第二条状狭缝102之间区域的中心受力线。对于R3，右侧受力侧边区域E给予的相互作用力F3，R2给予的相互作用力FD23，左侧受力靠近R3的相邻的第一条狭缝101之间区域给予的相互作用力FS1；对于R2，右侧 受力侧边区域E给予的相互作用力F2，R1给予的相互作用力FD12，左侧受力R3给予的相互作用力FD23；对于R1，右侧受力侧边区域E给予的相互作用力F1，左侧受力R2给予的相互作用力FD12；当侧边区域E的宽度e变窄时，对R1、R2、R3的相互作用力会变小，即F1，F2，F3会变小，当在同一第二区域D内相邻的第二条状狭缝102之间的距离c沿侧边区域E指向第一区域C的方向可以依次递增，即R1＜R2＜R3时，R1与R2，R2与R3之间产生的相互作用力变小，所以对于R3的受力，R3右侧的力F3与FD23之和变小(与之前没有变化时总力相比)，但是当第二条状狭缝102的宽度a变小的时候，侧边区域E会向内靠近，导致侧边区域E与R3之间相互作用力增大，虽然侧边区域E与R3之间相互作用力增大，但是在没考虑第二条状狭缝102的宽度a变小的情况下，F3与FD23之和是变小的，为以后F3增大留有佘量，使R3两侧力的平衡成为可能，进而R3不变形，在不变形的情况下，第二条状狭缝102的宽度a变窄，在同一第二区域D内相邻的第二条状狭缝102之间的距离c相应的也减小，最后使最外侧的两条第二条状狭缝向有效显示区域靠拢，用此种金属掩膜板进行蒸镀，制作的器件会形成窄边框的效果。
基于同一发明构思，本发明另一实施例还提供了一种本发明一个实施例提供的上述金属掩膜板制作的有机电致发光显示器件。
本发明实施例提供的一种金属掩膜板及其制作出的有机电致发光显示器件，该金属掩膜板包括：基板，设置在基板上的用于形成显示图像的第一区域和分别位于第一区域左右两侧的第二区域；在第一区域内设置有多条沿列方向延伸且等间距相互平行的第一条状狭缝，在各第二区域内设置有至少三条与第一条状狭缝相互平行的第二条状狭缝；其中，至少满足以下三个条件之二：第二条状狭缝的宽度小于第一条状狭缝的宽度；在同一第二区域内相邻的第二条状狭缝之间的距离小于相邻的第一条状狭缝之间的距离；侧边区域的宽度变窄，侧边区域为第二区域内最邻近金属掩膜板的侧边框的第二条状狭缝与侧边框之间的区域。通过对第二条状狭缝的宽度、同一第二区域内相邻的第二条状狭缝之间的距离以及以及侧边区域的宽度进行调整，当满足以上至少两个条件时，在第一区域内的第一条状狭缝不会发生变形的基础上，相比现有技术不仅可以缓解第二条状狭缝受磁场的影响，还 可以使第二区域占用较少的区域，在空间上实现窄边框。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (11)

  1. 一种金属掩膜板，包括：基板，设置在所述基板上的用于形成显示图像的第一区域和分别位于所述第一区域左右两侧的第二区域；在所述第一区域内设置有多条沿列方向延伸且等间距相互平行的第一条状狭缝，在各所述第二区域内设置有至少三条与所述第一条状狭缝相互平行的第二条状狭缝；其特征在于，其中，
    至少满足以下三个条件之二：
    条件一：所述第二条状狭缝的宽度小于所述第一条状狭缝的宽度；
    条件二：在同一所述第二区域内相邻的所述第二条状狭缝之间的距离小于相邻的所述第一条状狭缝之间的距离；
    条件三：侧边区域的宽度变窄，所述侧边区域为所述第二区域内最邻近所述金属掩膜板的侧边框的所述第二条状狭缝与所述侧边框之间的区域，所述侧边框为与所述第二条状狭缝延伸方向平行的边框。
  2. 如权利要求1所述的金属掩膜板，其特征在于，当同时满足所述条件一和所述条件二时，各所述第二条状狭缝的宽度均相同。
  3. 如权利要求2所述的金属掩膜板，其特征在于，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离均相同；或，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离沿所述侧边区域指向所述第一区域的方向依次递增或递减。
  4. 如权利要求1所述的金属掩膜板，其特征在于，当同时满足所述条件一和所述条件三时，各所述第二条状狭缝的宽度均相同；或，
    在同一所述第二区域内的所述第二条状狭缝的宽度沿所述侧边区域指向所述第一区域的方向依次递增。
  5. 如权利要求1所述的金属掩膜板，其特征在于，当同时满足所述条件二和所述条件三时，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离均相同；或，
    在同一所述第二区域内相邻的所述第二条状狭缝之间的距离沿所述侧边区域指向所述第一区域的方向依次递增。
  6. 如权利要求1所述的金属掩膜板，其特征在于，当同时满足所述条件一、所述条件二和所述条件三时，各所述第二条状狭缝的宽度均相同；
    在同一所述第二区域内相邻的所述第二条状狭缝之间的距离均相同；或，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离沿所述侧边区域指向所述第一区域的方向依次递增。
  7. 如权利要求1所述的金属掩膜板，其特征在于，当同时满足所述条件一、所述条件二和所述条件三时，在同一所述第二区域内的所述第二条状狭缝的宽度沿所述侧边区域指向所述第一区域的方向依次递增；
    在同一所述第二区域内相邻的所述第二条状狭缝之间的距离均相同；或，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离沿所述侧边区域指向所述第一区域的方向依次递增。
  8. 如权利要求1-7任一项所述的金属掩膜板，其特征在于，在满足所述条件一时，所述第二条状狭缝的宽度大于5μm且小于35μm。
  9. 如权利要求1-7任一项所述的金属掩膜板，其特征在于，在满足所述条件二时，在同一所述第二区域内相邻的所述第二条状狭缝之间的距离小于70μm。
  10. 如权利要求1-7任一项所述的金属掩膜板，其特征在于，在满足所述条件三时，所述侧边区域的宽度小于2.45mm。
  11. 一种使用如权利要求1-10任一项所述金属掩膜板制作出的有机电致发光显示器件。
PCT/CN2015/085758 2015-03-13 2015-07-31 一种金属掩膜板及其制作出的有机电致发光显示器件 WO2016145763A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN104651778B (zh) * 2015-03-13 2016-04-27 京东方科技集团股份有限公司 一种金属掩膜板及其制作出的有机电致发光显示器件
CN107248520B (zh) 2017-06-07 2019-10-01 京东方科技集团股份有限公司 一种掩模板、有机电致发光显示面板及其封装方法
CN107742472B (zh) * 2017-09-25 2021-03-26 昆山国显光电有限公司 封装掩膜板、封装方法及显示面板
CN109182964B (zh) * 2018-08-31 2019-11-15 云谷（固安）科技有限公司 掩膜板排版方法
CN110896051B (zh) * 2018-09-13 2022-06-21 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法和半导体器件
CN114613930B (zh) * 2022-03-17 2023-11-10 京东方科技集团股份有限公司 一种掩膜组件及显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1510971A (zh) * 2002-11-29 2004-07-07 �����ձ������ƶ���ʾ��ʽ���� 蒸发掩模和采用此掩模来制造有机场致发光器件的方法
TW200425775A (en) * 2003-03-19 2004-11-16 Pioneer Tohoku Corp Film formation mask, organic EL panel, and method of manufacturing the organic EL panel
CN103390728A (zh) * 2012-05-08 2013-11-13 三星显示有限公司 单位掩模板及包括该单位掩模板的掩模板组装体
US20140312318A1 (en) * 2013-04-18 2014-10-23 Samsung Display Co., Ltd. Patterning slit sheet, deposition apparatus including the same, method of manufacturing organic light-emitting display apparatus using the same, organic light-emitting display apparatus manufactured by using the method
CN104651778A (zh) * 2015-03-13 2015-05-27 京东方科技集团股份有限公司 一种金属掩膜板及其制作出的有机电致发光显示器件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6454895B1 (en) * 1999-08-11 2002-09-24 Southpac Trust International, Inc. Process for producing holographic material
KR101994838B1 (ko) * 2012-09-24 2019-10-01 삼성디스플레이 주식회사 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1510971A (zh) * 2002-11-29 2004-07-07 �����ձ������ƶ���ʾ��ʽ���� 蒸发掩模和采用此掩模来制造有机场致发光器件的方法
TW200425775A (en) * 2003-03-19 2004-11-16 Pioneer Tohoku Corp Film formation mask, organic EL panel, and method of manufacturing the organic EL panel
CN103390728A (zh) * 2012-05-08 2013-11-13 三星显示有限公司 单位掩模板及包括该单位掩模板的掩模板组装体
US20140312318A1 (en) * 2013-04-18 2014-10-23 Samsung Display Co., Ltd. Patterning slit sheet, deposition apparatus including the same, method of manufacturing organic light-emitting display apparatus using the same, organic light-emitting display apparatus manufactured by using the method
CN104651778A (zh) * 2015-03-13 2015-05-27 京东方科技集团股份有限公司 一种金属掩膜板及其制作出的有机电致发光显示器件

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