WO2019184205A1 - 掩膜板及其制备方法 - Google Patents

掩膜板及其制备方法 Download PDF

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Publication number
WO2019184205A1
WO2019184205A1 PCT/CN2018/101549 CN2018101549W WO2019184205A1 WO 2019184205 A1 WO2019184205 A1 WO 2019184205A1 CN 2018101549 W CN2018101549 W CN 2018101549W WO 2019184205 A1 WO2019184205 A1 WO 2019184205A1
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Prior art keywords
region
mask
size
pixel opening
auxiliary pixel
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PCT/CN2018/101549
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English (en)
French (fr)
Inventor
李伟丽
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昆山国显光电有限公司
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Publication date
Application filed by 昆山国显光电有限公司 filed Critical 昆山国显光电有限公司
Priority to EP18912788.9A priority Critical patent/EP3640365A4/en
Priority to JP2020501465A priority patent/JP6977140B2/ja
Priority to KR1020207005442A priority patent/KR20200028483A/ko
Priority to US16/524,190 priority patent/US20190345599A1/en
Publication of WO2019184205A1 publication Critical patent/WO2019184205A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present application relates to the field of display technologies, and in particular, to a mask and a method for preparing the same.
  • the AM-OLED active-matrix organic light emitting diode
  • FMM fine metal mask
  • the process of chamber magnetic bonding, alignment, mask cleaning, handling, and stretching of the vapor deposition technology has high requirements on the strength of the mask, and the difference in strength may result in the use of FMM. easily damaged.
  • it is necessary to etch more material on the FMM but in particular, on the FMM having a large size in the AA area (Active Area). A large amount may cause FMM to be damaged during production and operation.
  • the present application provides a mask and a preparation method thereof, which can balance the strength and uniformity of the FMM.
  • the application provides a mask comprising:
  • the mask is provided with a first region having a plurality of pixel openings for display, and a second region having a plurality of first auxiliary pixel openings disposed around the first region, the first The size of the first auxiliary pixel opening in the two regions is smaller than the size of the pixel opening for display in the first region.
  • the first auxiliary pixel opening in the second region is regularly arranged around the first region, and the size of the first auxiliary pixel opening regularly arranged around the first region is close to The first region gradually decreases outward.
  • the first auxiliary pixel opening in the second region is disposed around the first region as a plurality of first auxiliary pixel openings, and the plurality of first auxiliary pixel openings are The size decreases from the first region toward the outside.
  • the mask further includes a third region disposed between the first region and the second region, the third region having a plurality of second auxiliary pixel openings.
  • the size of the second auxiliary pixel opening in the third region is the same as the size of the pixel opening for display in the first region.
  • a size of the second auxiliary pixel opening in the third region is smaller than a size of a pixel opening for display in the first region, and a second in the third region The size of the auxiliary pixel opening gradually decreases from the first region toward the outside.
  • the pixel opening in the first region is a through hole
  • the first auxiliary pixel opening in the second region is a through hole or a non-through hole.
  • the second auxiliary pixel opening in the third region is a through hole or a non-through hole.
  • the thickness of the mask gradually increases from the first region to the outside.
  • the application also provides a method for preparing a mask, comprising:
  • the mask is fixedly disposed on the mask frame to form the mask.
  • the first auxiliary pixel opening etched in the second region is regularly arranged around the first region, and the size of the first auxiliary pixel opening regularly arranged around the first region Gradually decreasing from the first region toward the outside.
  • the first auxiliary pixel opening in the second region is disposed around the first region as a plurality of first auxiliary pixel openings, and the plurality of first auxiliary pixel openings are The size decreases from the first region toward the outside.
  • the method further includes: etching a third region disposed between the first region and the second region on the mask, wherein the third region is etched with a plurality of second auxiliary pixels Open the hole.
  • the size of the second auxiliary pixel opening in the third region is the same as the size of the pixel opening for display in the first region.
  • a size of the second auxiliary pixel opening in the third area is smaller than a size of a pixel opening for display in the first area, and a location in the third area The size of the second auxiliary pixel opening gradually decreases from the first region toward the outside.
  • the method further includes etching the mask to gradually increase a thickness of the mask from the first region to the outside.
  • the second region is disposed around the first region on the mask, and the size of the first auxiliary pixel opening in the second region is smaller than the size of the pixel opening in the first region, thereby
  • the intensity of the FMM from the etched area to the full etched area is between the two, thereby causing the stress to gradually change, gradually slowing down after the AA area (including the first area and the second area), thereby preventing the AA
  • the area is fractured to achieve the purpose of balancing the strength and uniformity of the FMM.
  • FIG. 1 is a schematic structural view of a mask in an embodiment
  • Figure 2 is a partially enlarged schematic view of the portion C corresponding to Figure 1 in an embodiment
  • Figure 3 is a further detailed schematic view of Figure 2;
  • FIG. 4 is a partially enlarged schematic view showing a portion C corresponding to FIG. 1 in another embodiment
  • Figure 5 is a partial cross-sectional view taken along line X-X of Figure 3;
  • FIG. 6 is a schematic flow chart of a method for preparing a mask in an embodiment.
  • 122 a pixel opening for display
  • the second auxiliary pixel is opened.
  • the embodiment of the present application provides a mask.
  • the mask may be used to fabricate a display panel.
  • the display panel may be an OLED (Organic Light-Emitting Diode) display panel or an AMOLED. Display panel.
  • the mask may specifically be a high precision metal mask (FMM).
  • FMM high precision metal mask
  • the organic light-emitting layer in the display region of the display panel can be formed by the mask, and the organic light-emitting layer herein can be a light-emitting layer in the organic light-emitting diode for displaying an image in the display panel.
  • film layers in the organic display panel such as an electron transport layer, an electron injection layer, a hole transport layer, and a hole injection, may be fabricated by using the mask provided by the present application as needed. Layers, etc.
  • the mask 100 may include a mask frame 11 and a mask 12 fixedly disposed on the mask frame 11.
  • the mask 12 may have a strip structure, which enables the organic light emitting material to be evaporated to a specified position corresponding to the array substrate or a position corresponding to the pixels in the display area.
  • the array substrate may be a TFT (Thin Film Transistor) substrate.
  • the mask 12 is provided with at least one region C corresponding to the array substrate (TFT substrate) or a region C corresponding to the pixels in the display region.
  • FIG. 2 is a partially enlarged schematic view showing a portion C of the corresponding region of FIG. 1.
  • a first area 121 may be disposed in the area C, and the first area 121 has a plurality of pixel openings 122 for display.
  • Each pixel opening 122 on the mask 12 is an opening corresponding to each pixel electrode on the array substrate or an opening corresponding to the pixels in the display area.
  • the organic light-emitting material can be evaporated onto each anode through each pixel opening 122 to form an organic light-emitting layer on each anode.
  • the second region 123 is further disposed around the first region 121 on the region C. 2 is a partial schematic view, and it should be understood by those skilled in the art that the second region 123 is disposed around the first region 121, that is, the second region 123 may surround the first region 121.
  • the second area 123 has a plurality of first auxiliary pixel openings 124.
  • the first auxiliary pixel openings 124 can be formed by using a glass surface in a half-cut form, thereby increasing the tensile strength of the mask. Specifically, the size of the first auxiliary pixel opening 124 in the second region 123 is smaller than the size of the pixel opening 122 in the first region 121.
  • the second region is disposed around the first region on the mask such that the size of the first auxiliary pixel opening in the second region is smaller than the size of the pixel opening for display in the first region.
  • the intensity of the FMM from the unetched region to the full etched region may be between the two, thereby causing the stress to gradually change, that is, the stress gradually slows down after the AA region (including the first region and the second region), Therefore, the AA area is prevented from being damaged, so as to balance the strength and uniformity of the FMM.
  • the first auxiliary pixel openings 124 in the second region 123 may be regularly arranged around the first region 121, wherein the first auxiliary pixel opening 124 may surround
  • the first region 121 is provided with a plurality of turns, and the size of the first auxiliary pixel opening 124 regularly arranged around the first region 121 is reduced from the first region 121 toward the outside. That is, the size of the first auxiliary pixel opening 124 in the second region 123 is designed to be a gradual form such that the size of the first auxiliary pixel opening 124 gradually decreases from the first region 121 toward the outside, thereby gradually increasing the intensity of the FMM.
  • first auxiliary pixel openings are provided around the first region 121, that is, the first circle of auxiliary pixel openings 1241 and the second as shown in FIG.
  • the circle assists the pixel opening 1242.
  • the first auxiliary pixel opening 1241 is adjacent to the first area 121, and the size of the pixel opening 122 in the first area 121 is larger than the size of the first auxiliary pixel opening in the first auxiliary pixel opening 1241.
  • the size of the first auxiliary pixel opening in one turn of the auxiliary pixel opening 1241 is larger than the size of the first auxiliary pixel opening in the second turn auxiliary pixel opening 1242. Therefore, the size of the first auxiliary pixel opening is reduced from the first region 121 to the outside.
  • the size of the first auxiliary pixel opening in the first auxiliary pixel opening 1241 of the first region 121 may be set. (X-x1) and (Y-y1), and the size of the first auxiliary pixel opening in the second auxiliary pixel opening 1242 may be set to (X-x1-x2) and (Y-y1-y2). Where x1 and x2 are 10% of X, respectively, and y1 and y2 are 10% of Y, respectively.
  • x1 and x2 may be 5%-40% of X, respectively, and x1 and x2 may be different, and y1 and y2 may be 5%-40% of Y, respectively, and y1 and y2 may be different.
  • the setting may be performed in the same manner as long as the size of the first auxiliary pixel opening is gradually decreased from the first region 121 to the outside. Gradually increase the strength of the FMM, and gradually change the stress to prevent the mask from being damaged; and make the uniformity of the entire FMM better, therefore, it will not produce a large net and fit wrinkles to meet the product design specifications. .
  • the mask 12 may further include a third region 125 disposed between the first region 121 and the second region 123, wherein the third region 125 has a plurality of second auxiliary Pixel opening 126.
  • the size of the second auxiliary pixel opening 126 in the third region 125 may be the same as the size of the pixel opening 122 in the first region 121 for display, of course, the second in the third region 125.
  • the size of the auxiliary pixel opening 126 may also be different from the size of the pixel opening 122 for display in the first area 121.
  • the size of the second auxiliary pixel opening 126 in the third region 125 may be smaller than the size of the pixel opening 122 for display in the first region 121, and gradually decrease from the first region toward the outside.
  • the pixel opening 122 for display in the first region 121 and the second auxiliary pixel opening 126 in the third region 125 may be through holes, and the first auxiliary pixel opening 124 in the second region 123 may be adopted.
  • Through or non-through holes If the second auxiliary pixel opening 126 is a non-through hole, the glass surface can be formed in a half-cut form, and the first auxiliary pixel opening 124 in the second area 123 is designed in the form of the embodiment shown in FIG. That is, the size of its opening is designed to be a gradual form.
  • the size of the first auxiliary pixel opening 124 in the second region 123 can also be designed in a graded form and etched to form a through hole to increase its strength while maintaining the overall uniformity of the FMM.
  • the thickness of the mask 12 may also be etched such that the thickness of the mask 12 gradually increases from the first region 121, thereby increasing the thickness of the residual sheet. . Therefore, the intensity of the FMM gradually increases from the first region 121, and since the intensity of the FMM changes gradually, the uniformity of the FMM as a whole is further improved.
  • the thickness of the first region 121 is measured as H, and the thickness of the first ring auxiliary pixel opening 1241 near the first region 121 is measured.
  • H1 the thickness of the second auxiliary pixel opening 1242 along the first circle 1241 is H2
  • H2>H1>H the thickness of the first region 121, that is, H, may be between 10 and 25 ⁇ m, and the thickness of the thickest mask, that is, the thickness of the unetched region, does not exceed 30 ⁇ m. Under this condition, the thickness of the mask is gradually increased from the first region 121 to the outside, and the strength and uniformity of the FMM can be further improved, and the risk of folding of the AA region of the FMM is greatly reduced.
  • the embodiment of the present application further provides a method for preparing a mask. As shown in FIG. 6, the method may include the following steps:
  • Step S601 providing a mask, etching a plurality of pixel openings on the mask to form a first region.
  • the mask may have a strip structure. Specifically, a metal material may be used, and the organic light emitting material may be evaporated to a predetermined position corresponding to the array substrate (TFT substrate) or a position corresponding to the pixels in the display area.
  • TFT substrate array substrate
  • Each of the pixel openings on the mask is an opening corresponding to each pixel electrode on the array substrate or an opening corresponding to the pixels in the display area, thereby evaporating the organic light-emitting material through the opening of each pixel to On each anode, an organic light-emitting layer was formed on each anode.
  • Step S602 etching a plurality of first auxiliary pixel openings around the first region to form a second region, wherein a size of the first auxiliary pixel opening in the second region is smaller than a size of the pixel opening in the first region.
  • the pixel opening in the first region is etched into the through hole, and the first auxiliary pixel opening in the second region may be formed by using a glass surface in a half-cut form, and the first auxiliary pixel in the second region The size of the opening is smaller than the size of the pixel opening in the first area, thereby increasing the tensile strength of the mask.
  • step S603 the mask is fixedly disposed on the mask frame to form a mask.
  • the mask frame can also be made of a metal material.
  • the mask is formed by fixing the mask on the mask frame, so that the display panel can be fabricated through the mask.
  • the second region is formed by etching around the first region on the mask, and the size of the first auxiliary pixel opening in the second region is smaller than the size of the pixel opening in the first region, thereby
  • the intensity of the FMM is gradually changed from the etched area to the full etched area, and the stress is gradually changed, that is, the stress is gradually slowed down after the AA area (including the first area and the second area), thereby preventing the AA area from being folded.
  • the first auxiliary pixel openings etched in the second region are regularly arranged around the first region, wherein the size of the regularly arranged first auxiliary pixel openings decreases from the first region toward the outside.
  • the first auxiliary pixel opening may be disposed in a plurality of turns around the first region, and the size of the first auxiliary pixel opening arranged in a circle is reduced from the first region to the outside. That is, the size of the first auxiliary pixel opening in the second region is designed to be in a gradual form such that the size of the first auxiliary pixel opening gradually becomes smaller from the first region toward the outside, so that the intensity of the FMM is gradually increased.
  • the mask further includes a third region disposed between the first region and the second region, wherein the plurality of second auxiliary pixel openings are etched on the third region.
  • the size of the second auxiliary pixel opening in the third area may be the same as the pixel opening in the first area.
  • the pixel opening in the first region is a through hole
  • the second auxiliary pixel opening in the third region is a non-through hole. That is, the second auxiliary pixel opening can be formed by using a glass surface in a half-cut form.
  • the design of the first auxiliary pixel opening in the second region the design can be performed in two ways: the first method is to design the first auxiliary pixel opening in the second region into the form of the above embodiment.
  • the size of the opening is designed to be a gradual form; the other method is to design the size of the first auxiliary pixel opening in the second area to be the same as the pixel opening in the first area, and the glass surface can be used.
  • the semi-engraved form forms a non-through hole to increase the strength while maintaining the overall uniformity of the FMM.
  • the thickness of the mask may also be etched such that the thickness of the mask gradually increases from the first region to the outside, thereby increasing the thickness of the residual sheet. Therefore, the strength of the FMM gradually increases from the first region to the outside because the intensity of the FMM is a gradual change, thereby further improving the overall uniformity of the FMM.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

本申请涉及一种掩膜板及其制备方法。其中掩膜板包括掩膜框架和固定设置在掩膜框架上的掩膜，掩膜上设置有具有多个用于显示的像素开孔的第一区域、以及围绕第一区域设置的具有多个第一辅助像素开孔的第二区域，而第二区域中的第一辅助像素开孔的尺寸小于第一区域中的像素开孔的尺寸。本申请通过在掩膜上围绕第一区域设置第二区域，并使得第二区域中第一辅助像素开孔的尺寸小于第一区域中的像素开孔的尺寸，从而使得FMM从未刻蚀区到全刻蚀区之间的强度介于两者之间，进而使应力发生渐变，在AA区(包括第一区域和第二区域)之后逐渐地减缓，从而防止AA区发生折伤，以达到平衡FMM的强度和均匀性的目的。

Description

掩膜板及其制备方法 技术领域
本申请涉及显示技术领域，特别是涉及一种掩膜板及其制备方法。
背景技术
由于被称为下一代显示技术的AMOLED(Active-matrix organic light emitting diode，中文全称是有源矩阵有机发光二极体或主动矩阵有机发光二极体)具有驱动电压低、发光元件寿命长等优点，因此受到了青睐。AMOLED通过蒸镀技术实现全彩时需要使用到FMM(fine metal mask，高精度金属掩模板)，来保证蒸镀有机材料的位置及尺寸。
然而，蒸镀技术中的腔室磁贴合、对位以及掩模板(mask)的清洗、搬运、张网等等过程，对掩模板的强度有较高要求，强度差可能导致使用过程中FMM容易损坏。而且基于FMM的结构特殊性，以及蒸镀位置精度的要求，需要对FMM刻蚀掉较多的材料，然而尤其是在AA区(Active Area，有效显示区域)尺寸较大的FMM上，刻蚀量较多可能导致FMM在生产运营过程中产生折伤。
发明内容
基于此，本申请提供一种掩膜板及其制备方法，能够兼顾FMM强度及均匀性。
本申请提供一种掩膜板，包括：
掩膜框架；以及
固定设置在所述掩膜框架上的掩膜，
其中，所述掩膜上设置有具有多个用于显示的像素开孔的第一区域、以及围绕所述第一区域设置的具有多个第一辅助像素开孔的第二区域，所述第二区域中的第一辅助像素开孔的尺寸小于所述第一区域中用于显示的像素开孔的尺寸。
在其中一个实施例中，所述第二区域中的第一辅助像素开孔围绕所述第一 区域规则排列，所述围绕所述第一区域规则排列的第一辅助像素开孔的尺寸从靠近所述第一区域往外逐渐减小。
在其中一个实施例中，所述第二区域中的所述第一辅助像素开孔围绕所述第一区域设置为多圈第一辅助像素开孔，所述多圈第一辅助像素开孔的尺寸从靠近所述第一区域往外逐圈减小。
在其中一个实施例中，所述掩膜上还包括设置在所述第一区域和第二区域之间的第三区域，所述第三区域具有多个第二辅助像素开孔。
在其中一个实施例中，所述第三区域中的第二辅助像素开孔的尺寸与所述第一区域中用于显示的像素开孔的尺寸相同。
在其中一个实施例中，所述第三区域中的所述第二辅助像素开孔的尺寸小于所述第一区域中用于显示的像素开孔的尺寸，并且所述第三区域中第二辅助像素开孔的尺寸从靠近所述第一区域往外逐渐减小。
在其中一个实施例中，所述第一区域中的像素开孔为贯穿孔，所述第二区域中的第一辅助像素开孔为贯穿孔或非贯穿孔。
在其中一个实施例中，所述第三区域中的第二辅助像素开孔为贯穿孔或非贯穿孔。
在其中一个实施例中，所述掩膜的厚度从所述第一区域往外逐渐增大。
本申请还提供一种掩膜板的制备方法，包括：
提供一掩膜，在所述掩膜上刻蚀多个用于显示的像素开孔以形成第一区域；
围绕所述第一区域刻蚀多个第一辅助像素开孔形成第二区域，所述第二区域中的第一辅助像素开孔的尺寸小于所述第一区域中的像素开孔的尺寸；以及
将所述掩膜固定设置在掩膜框架上，以形成所述掩膜板。
在其中一个实施例中，所述第二区域中刻蚀的第一辅助像素开孔围绕所述第一区域规则排列，所述围绕所述第一区域规则排列的第一辅助像素开孔的尺寸从靠近所述第一区域往外逐渐减小。
在其中一个实施例中，所述第二区域中的所述第一辅助像素开孔围绕所述第一区域设置为多圈第一辅助像素开孔，所述多圈第一辅助像素开孔的尺寸从靠近所述第一区域往外逐圈减小。
在其中一个实施例中，还包括：在所述掩膜上刻蚀设置在所述第一区域和第二区域之间的第三区域，所述第三区域刻蚀有多个第二辅助像素开孔。
在其中一个实施例中，所述第三区域中的所述第二辅助像素开孔的尺寸与所述第一区域中用于显示的像素开孔的尺寸相同。
在其中一个实施例中，所述第三区域中的所述第二辅助像素开孔的尺寸小于所述第一区域中用于显示的像素开孔的尺寸，并且所述第三区域中的所述第二辅助像素开孔的尺寸从靠近所述第一区域往外逐渐减小。
在其中一个实施例中，还包括，对所述掩膜进行刻蚀，以使所述掩膜的厚度从所述第一区域往外逐渐增大。
上述掩膜板及其制备方法，通过在掩膜上围绕第一区域设置第二区域，并使得第二区域中第一辅助像素开孔的尺寸小于第一区域中的像素开孔的尺寸，从而使得FMM从未刻蚀区到全刻蚀区之间的强度介于两者之间，进而使应力发生渐变，在AA区(包括第一区域和第二区域)之后逐渐地减缓，从而防止AA区发生折伤，以达到平衡FMM的强度和均匀性的目的。
附图说明
图1为一个实施例中掩膜板的结构示意图；
图2为一个实施例中图1对应C部的局部放大示意图；
图3为图2的进一步细化示意图；
图4为另一个实施例中图1对应C部的局部放大示意图；
图5为图3沿X－X线的局部剖面示意图；
图6为一个实施例中掩膜板的制备方法的流程示意图。
附图中，各标号所代表的部件列表如下：
100：掩膜板；
11：掩膜框架；
12：掩膜；
121：第一区域；
122：用于显示的像素开孔；
123：第二区域；
124：第一辅助像素开孔；
1241：第一圈辅助像素开孔；
1242：第二圈辅助像素开孔；
125：第三区域；
126：第二辅助像素开孔。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
本申请实施例提供了一种掩膜板，需要说明的是，该掩膜板可以用于制作显示面板，其中，显示面板可以是OLED(Organic Light-Emitting Diode，有机发光二极管)显示面板或AMOLED显示面板。掩膜板具体可以是高精度金属掩模板(FMM)。在本实施例中，通过该掩膜板可以制作显示面板的显示区域中的有机发光层，这里所说的有机发光层可以是显示面板中用于显示图像的有机发光二极管中的发光层。当然，在本申请的其他实施例中，也可以根据需要采用本申请提供的掩膜板制作有机显示面板中的其他膜层，例如电子传输层、电子注入层、空穴传输层、空穴注入层等。
在一个实施例中，如图1所示，掩膜板100可以包括掩膜框架11和固定设置在掩膜框架11上的掩膜12。其中，掩膜12可以呈条状结构，其能够使有机发光材料蒸镀到与阵列基板对应的指定位置或与显示区域中的像素一一对应的位置。阵列基板可以是TFT(Thin Film Transistor，薄膜晶体管)基板。在本实施例中，掩膜12上设置有至少一个与阵列基板(TFT基板)对应的区域C或与显示区域中的像素一一对应的区域C。
图2为图1对应区域C部的局部放大示意图。如图2所示，区域C中可以设置有第一区域121，第一区域121上具有多个用于显示的像素开孔122。其中，掩膜12上的每个像素开孔122为与阵列基板上的各像素电极相对应的开孔或与 显示区域中的像素一一对应的开孔。具体的，有机发光材料可通过各像素开孔122蒸镀到各阳极上，以在各阳极上形成有机发光层。
在本实施例中，在区域C上围绕第一区域121还设置有第二区域123。图2给出的是局部示意图，本领域技术人员应当可以理解，第二区域123是围绕第一区域121设置，即第二区域123可以包围第一区域121。第二区域123上具有多个第一辅助像素开孔124，该第一辅助像素开孔124可以采用玻璃面半刻形式形成，从而提高掩膜的张网强度。具体的，第二区域123中的第一辅助像素开孔124的尺寸小于第一区域121中的像素开孔122的尺寸。
在本实施例中，通过在掩膜上围绕第一区域设置第二区域，并使得第二区域中的第一辅助像素开孔的尺寸小于第一区域中用于显示的像素开孔的尺寸，可以使得FMM从未刻蚀区到全刻蚀区之间的强度介于两者之间，进而使应力发生渐变，即在AA区(包括第一区域和第二区域)之后应力逐渐地减缓，从而防止AA区发生折伤，以达到平衡FMM的强度和均匀性的目的。
在一个实施例中，为了进一步平衡FMM的强度和均匀性，可以使第二区域123中的第一辅助像素开孔124围绕第一区域121规则排列，其中，第一辅助像素开孔124可以围绕第一区域121设置有多圈，并且使得围绕第一区域121规则排列的第一辅助像素开孔124的尺寸从靠近第一区域121往外逐圈减小。即，将第二区域123中的第一辅助像素开孔124的尺寸设计成渐变形式，使得第一辅助像素开孔124的尺寸从靠近第一区域121往外逐渐变小，从而使得FMM的强度逐渐增强。
具体的，在一个实施例中，如图3所示，假设围绕第一区域121设置有两圈第一辅助像素开孔，即如图3所示的第一圈辅助像素开孔1241以及第二圈辅助像素开孔1242。其中，第一圈辅助像素开孔1241靠近第一区域121，第一区域121中的像素开孔122的尺寸大于第一圈辅助像素开孔1241中的第一辅助像素开孔的尺寸，且第一圈辅助像素开孔1241中的第一辅助像素开孔的尺寸大于第二圈辅助像素开孔1242中的第一辅助像素开孔的尺寸。因此，实现第一辅助像素开孔的尺寸从第一区域121往外逐圈变小。
在本实施例中，假设第一区域121中像素开孔122的尺寸为X和Y，则靠 近第一区域121的第一圈辅助像素开孔1241中的第一辅助像素开孔的尺寸可以设置为(X-x1)和(Y-y1)，且第二圈辅助像素开孔1242中第一辅助像素开孔的尺寸可以设置为(X-x1-x2)和(Y-y1-y2)。其中，x1和x2分别为10％的X，y1和y2分别为10％的Y。需要说明的是，x1和x2可以分别为5％-40％的X，x1和x2可以不同，y1和y2可以分别为5％-40％的Y，y1和y2也可以不同。若要围绕第一区域121设置多圈的第一辅助像素开孔，则可以依此类推进行设置，只要保证第一辅助像素开孔的尺寸从靠近第一区域121往外逐渐变小即可，从而逐渐增强FMM的强度，并且使应力形成渐变，以防止掩膜折伤；并且使得整个FMM的均匀性较好，因此，不会产生较大的张网及贴合皱褶，以符合产品设计规格。
在一个实施例中，如图4所示，掩膜12上还可以包括设置在第一区域121和第二区域123之间的第三区域125，其中，第三区域125具有多个第二辅助像素开孔126。在本实施例中，第三区域125中的第二辅助像素开孔126的尺寸可以与第一区域121中用于显示的像素开孔122的尺寸相同，当然，第三区域125中的第二辅助像素开孔126的尺寸也可以与第一区域121中用于显示的像素开孔122的尺寸不同。具体的，第三区域125中的第二辅助像素开孔126的尺寸可以小于第一区域121中用于显示的像素开孔122的尺寸，且从靠近第一区域往外逐渐减小。
另外，第一区域121中用于显示的像素开孔122以及第三区域125中的第二辅助像素开孔126可以为贯穿孔，而第二区域123中的第一辅助像素开孔124可以采用贯穿孔或非贯穿孔。若第二辅助像素开孔126采用非贯穿孔时，则可以采用玻璃面半刻形式形成，同时将第二区域123中的第一辅助像素开孔124设计成如图3所示实施例的形式，即，将其开孔的尺寸设计成渐变形式。也可以将第二区域123中的第一辅助像素开孔124的尺寸设计成渐变形式，且对其刻蚀形成贯穿孔，从而在保持FMM的整体均匀性的同时增加了其强度。
在一个实施例中，为了进一步提高FMM的强度和均匀性，还可以对掩膜12的厚度进行刻蚀，使得掩膜12的厚度从第一区域121往外逐渐增大，从而增加残留板材的厚度。因此，FMM的强度从第一区域121往外逐渐加强，因为FMM 的强度是呈渐变变化，因此也进一步提高了FMM整体的均匀性。
如图5所示，假设沿图3中X－X线对掩膜进行剖切后，测得第一区域121的厚度为H，靠近第一区域121的第一圈辅助像素开孔1241的厚度为H1，沿第一圈1241往外的第二圈辅助像素开孔1242的厚度为H2，且H2>H1>H。具体的，在本实施例中，第一区域121的厚度即H具体可以在10～25um之间，而掩膜上最厚的厚度、即未刻蚀区域的厚度不超过30um。在此条件下使得掩膜的厚度从第一区域121往外逐渐变厚即可，可以进一步提高了FMM的强度和均匀性，并大大减少了FMM的AA区的折伤风险。
本申请实施例还提供了一种掩膜板的制备方法，如图6所示，该方法可以包括如下步骤：
步骤S601，提供掩膜，在掩膜上刻蚀多个像素开孔以形成第一区域。
其中，掩膜可以呈条状结构，具体可以采用金属材料，能够使有机发光材料蒸镀到与阵列基板(TFT基板)对应的指定位置或与显示区域中的像素一一对应的位置。掩膜上的每个像素开孔为与阵列基板上的各像素电极相对应的开孔或与显示区域中的像素一一对应的开孔，从而将有机发光材料通过各像素开孔蒸镀到各阳极上，以在各阳极上形成有机发光层。
步骤S602，围绕第一区域刻蚀多个第一辅助像素开孔形成第二区域，其中，第二区域中的第一辅助像素开孔的尺寸小于第一区域中的像素开孔的尺寸。
在本实施例中，第一区域中的像素开孔被刻蚀为贯穿孔，第二区域中第一辅助像素开孔可以采用玻璃面半刻形式形成，且第二区域中的第一辅助像素开孔的尺寸小于第一区域中的像素开孔的尺寸，从而提高掩膜的张网强度。
步骤S603，将掩膜固定设置在掩膜框架上，以形成掩膜板。
其中，掩膜框架也可以选用金属材料。通过将掩膜固定设置在掩膜框架上，以形成掩膜板，从而可以通过该掩膜板制作显示面板。
在本实施例中，通过在掩膜上围绕第一区域刻蚀形成第二区域，并使得第二区域中第一辅助像素开孔的尺寸小于第一区域中的像素开孔的尺寸，从而使得FMM从未刻蚀区到全刻蚀区之间的强度形成渐变，进而使应力发生渐变，即在AA区(包括第一区域和第二区域)之后应力逐渐地减缓，从而防止AA区发 生折伤，以达到平衡FMM的强度和均匀性的目的。
在一个实施例中，第二区域中刻蚀的第一辅助像素开孔围绕第一区域规则排列，其中，规则排列的第一辅助像素开孔的尺寸从靠近第一区域往外逐圈减小。具体的，第一辅助像素开孔围绕第一区域可以设置有多圈，则按圈规则排列的第一辅助像素开孔的尺寸从靠近第一区域往外逐圈减小。即将第二区域中的第一辅助像素开孔的尺寸设计成渐变形式，使得第一辅助像素开孔的尺寸从靠近第一区域往外逐渐变小，从而使得FMM的强度逐渐增强。
在一个实施例中，掩膜上还包括设置在第一区域和第二区域之间的第三区域，其中，在第三区域上刻蚀有多个第二辅助像素开孔。具体的，第三区域中第二辅助像素开孔的尺寸可以与第一区域中的像素开孔相同。其不同之处在于，第一区域中的像素开孔为贯穿孔，第三区域中的第二辅助像素开孔为非贯穿孔。即第二辅助像素开孔可以采用玻璃面半刻形式形成。而对于第二区域中的第一辅助像素开孔的设计，则可以按照如下两种方法进行设计：第一种方法是将第二区域中的第一辅助像素开孔设计成上述实施例的形式，即将其开孔的尺寸设计成渐变形式；另一种方法则可以将第二区域中的第一辅助像素开孔的尺寸设计成与第一区域中的像素开孔相同，且可以采用玻璃面半刻形式形成非贯穿孔，从而在保持FMM的整体均匀性的同时增加其强度。
在一个实施例中，为了进一步提高FMM的强度和均匀性，还可以对掩膜的厚度进行刻蚀，使得掩膜的厚度从第一区域往外逐渐增大，从而增加残留板材的厚度。因此，FMM的强度从第一区域往外逐渐加强，因为是FMM的强度是渐变变化，从而也进一步提高了FMM整体的均匀性。
以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改 进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (16)

  1. 一种掩膜板，其中，包括：
    掩膜框架；以及
    固定设置在所述掩膜框架上的掩膜，
    其中，所述掩膜上设置有具有用于显示的多个像素开孔的第一区域、以及围绕所述第一区域设置的具有多个第一辅助像素开孔的第二区域，所述第二区域中的所述第一辅助像素开孔的尺寸小于所述第一区域中的用于显示的所述像素开孔的尺寸。
  2. 根据权利要求1所述的掩膜板，其中，所述第二区域中的所述第一辅助像素开孔围绕所述第一区域规则排列，所述围绕所述第一区域规则排列的所述第一辅助像素开孔的尺寸从靠近所述第一区域往外逐渐减小。
  3. 根据权利要求1所述的掩膜板，其中，所述第二区域中的所述第一辅助像素开孔围绕所述第一区域设置为多圈第一辅助像素开孔，所述多圈第一辅助像素开孔的尺寸从靠近所述第一区域往外逐圈减小。
  4. 根据权利要求1所述的掩膜板，其中，所述掩膜上还包括设置在所述第一区域和所述第二区域之间的第三区域，所述第三区域具有多个第二辅助像素开孔。
  5. 根据权利要求4所述的掩膜板，其中，所述第三区域中的所述第二辅助像素开孔的尺寸与所述第一区域中的用于显示的所述像素开孔的尺寸相同。
  6. 根据权利要求4所述的掩膜板，其中，所述第三区域中的所述第二辅助像素开孔的尺寸小于所述第一区域中的用于显示的所述像素开孔的尺寸，并且所述第三区域中的所述第二辅助像素开孔的尺寸从靠近所述第一区域往外逐渐减小。
  7. 根据权利要求1所述的掩膜板，其中，所述第一区域中的所述像素开孔为贯穿孔，所述第二区域中的所述第一辅助像素开孔采用贯穿孔或非贯穿孔。
  8. 根据权利要求4所述的掩膜板，其中，所述第三区域中的所述第二辅助像素开孔为贯穿孔或非贯穿孔。
  9. 根据权利要求1～8任一项所述的掩膜板，其中，所述掩膜的厚度从所述第一区域往外逐渐增大。
  10. 一种掩膜板的制备方法，其中，包括：
    提供掩膜，在所述掩膜上刻蚀用于显示的多个像素开孔以形成第一区域；
    围绕所述第一区域刻蚀多个第一辅助像素开孔以形成第二区域，所述第二区域中的所述第一辅助像素开孔的尺寸小于所述第一区域中的用于显示的所述像素开孔的尺寸；以及
    将所述掩膜固定设置在掩膜框架上，以形成所述掩膜板。
  11. 根据权利要求10所述的掩膜板的制备方法，其中，所述第二区域中刻蚀的所述第一辅助像素开孔围绕所述第一区域规则排列，围绕所述第一区域规则排列的所述第一辅助像素开孔的尺寸从靠近所述第一区域往外逐渐减小。
  12. 根据权利要求10所述的掩膜板的制备方法，其中，所述第二区域中的所述第一辅助像素开孔围绕所述第一区域设置为多圈第一辅助像素开孔，所述多圈第一辅助像素开孔的尺寸从靠近所述第一区域往外逐圈减小。
  13. 根据权利要求10所述的掩膜板的制备方法，其中，还包括：在所述掩膜上刻蚀设置在所述第一区域和第二区域之间的第三区域，所述第三区域刻蚀有多个第二辅助像素开孔。
  14. 根据权利要求13所述的掩膜板，其中，所述第三区域中的所述第二辅助像素开孔的尺寸与所述第一区域中用于显示的像素开孔的尺寸相同。
  15. 根据权利要求13所述的掩膜板，其中，所述第三区域中的所述第二辅助像素开孔的尺寸小于所述第一区域中用于显示的像素开孔的尺寸，并且所述第三区域中的所述第二辅助像素开孔的尺寸从靠近所述第一区域往外逐渐减小。
  16. 根据权利要求10～15任一项所述的掩膜板的制备方法，其中，还包括，对所述掩膜进行刻蚀，以使所述掩膜的厚度从所述第一区域往外逐渐增大。
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