WO2020199308A1 - 有机发光器件及其制作方法 - Google Patents

有机发光器件及其制作方法 Download PDF

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Publication number
WO2020199308A1
WO2020199308A1 PCT/CN2019/086583 CN2019086583W WO2020199308A1 WO 2020199308 A1 WO2020199308 A1 WO 2020199308A1 CN 2019086583 W CN2019086583 W CN 2019086583W WO 2020199308 A1 WO2020199308 A1 WO 2020199308A1
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Prior art keywords
semiconductor layer
layer
organic light
tin oxide
emitting device
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PCT/CN2019/086583
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English (en)
French (fr)
Inventor
刘华龙
吴聪原
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/605,398 priority Critical patent/US11552248B2/en
Publication of WO2020199308A1 publication Critical patent/WO2020199308A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the invention relates to the field of display, in particular to an organic light-emitting device and a manufacturing method thereof.
  • Organic light emitting devices (Organic Light Emitting Diode, OLED) have been widely used in the display field, lighting field, and smart wear field due to their good self-luminous characteristics, high contrast, and fast response.
  • evaporation method There are two main methods for preparing organic light-emitting devices: evaporation method and printing method.
  • the technology of preparing organic light-emitting devices of large, medium and small size by full evaporation method is quite mature compared with printing technology, and has been used in commercial production.
  • the full-evaporation technology has the problem of low material utilization rate and difficulty in preparing high-resolution devices.
  • the material utilization rate of the device prepared by the printing technology is as high as 90%, and the cost of the device preparation is about 17% lower than that of the full evaporation technology, and no mask is required during the printing process, which can be used for the preparation of high-resolution display devices. Therefore, the preparation of large-size and high-resolution organic light-emitting devices is a research hotspot in the display field.
  • FIG. 1 it is a schematic diagram of the structure of the process of manufacturing an organic light-emitting device by printing in the prior art.
  • the printing process is as follows: forming an indium tin oxide layer 2 on a substrate 1, and patterning the indium tin oxide layer 2 to prepare a barrier structure 41 (bank ), the indium tin oxide layer 2 at the bottom is a hydrophilic substance, the surrounding retaining wall structure 41 is a hydrophobic substance, and the area of the edge of the indium tin oxide layer 2 overlaps with the retaining wall structure 41.
  • the purpose of the present invention is to provide an organic light-emitting device and a manufacturing method thereof, which can solve the problem of uneven brightness of bright or dark spots at the foreign particles caused by foreign particles in the indium tin oxide layer, and avoid the overall brightness unevenness of the organic light-emitting device .
  • the present invention provides an organic light-emitting device including a substrate; an indium tin oxide layer disposed on the substrate; a semiconductor layer disposed on the indium tin oxide layer; and a pixel definition layer disposed on the substrate On the semiconductor layer; wherein the semiconductor layer covers the indium tin oxide layer so that the thickness of the indium tin oxide layer is uniform.
  • the thickness of the semiconductor layer ranges from 3 nm to 10 um.
  • the light transmittance of the semiconductor layer is greater than 80%.
  • the material of the semiconductor layer is indium zinc oxide or indium germanium zinc oxide.
  • the semiconductor layer is prepared by chemical vapor deposition, physical vapor deposition, spin coating or printing.
  • the substrate is a thin film transistor substrate.
  • the pixel definition layer includes: a barrier wall structure surrounding the semiconductor layer; and a functional layer disposed on the semiconductor layer surrounded by the barrier wall structure.
  • the functional layer is produced by inkjet printing.
  • a method for manufacturing an organic light emitting device which includes the steps:
  • the step of producing an indium tin oxide layer is to provide a substrate on which an indium tin oxide layer is produced;
  • the step of producing a semiconductor layer is to produce a semiconductor layer on the indium tin oxide layer by chemical vapor deposition, physical vapor deposition, spin coating or printing, and the material of the semiconductor layer is indium zinc oxide or indium germanium zinc oxide ,
  • the thickness of the material film of the semiconductor layer is in the range of 3nm-10um;
  • a patterning processing step is to perform patterning processing on the indium tin oxide layer and the semiconductor layer, and the patterned area of the indium tin oxide layer and the semiconductor layer is opposite to the light emitting area of the organic light emitting device ;
  • the step of fabricating a pixel definition layer is to fabricate the pixel definition layer on the semiconductor layer.
  • the step of making a pixel definition layer includes:
  • the step of manufacturing a retaining wall structure includes forming a retaining wall structure around the semiconductor layer, and the retaining wall structure partially overlaps the semiconductor layer;
  • the step of producing a functional layer is to produce the functional layer on the semiconductor layer surrounded by the barrier structure by inkjet printing.
  • the beneficial effect of the present invention is to provide an organic light-emitting device and a manufacturing method thereof.
  • the semiconductor layer on the indium tin oxide layer By fabricating the semiconductor layer on the indium tin oxide layer, the foreign particles existing in the indium tin oxide layer can be covered, and the occurrence of foreign particles is avoided.
  • the problem of uneven brightness of bright spots or dark spots ensures that the overall brightness of the organic light-emitting device is uniform.
  • FIG. 1 is a schematic diagram of the structure of the process of manufacturing an organic light emitting device in the prior art
  • FIG. 2 is a schematic diagram of the structure of an organic light emitting device in an embodiment of the present invention.
  • Fig. 3 is a production flow chart of an organic light emitting device in an embodiment of the present invention.
  • FIG. 4 is a production flow chart of the steps of producing the pixel definition layer in FIG. 3;
  • FIG. 5 is a schematic diagram of the structure of the manufacturing method in FIG. 3.
  • Substrate 2. Indium tin oxide layer, 3. Semiconductor layer, 4. Pixel definition layer,
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present invention, “plurality” means two or more than two, unless specifically defined otherwise.
  • the organic light emitting device of the present invention includes a substrate 1, an indium tin oxide layer 2, a semiconductor layer 3, and a pixel definition layer 4 from bottom to top.
  • the indium tin oxide layer 2 is disposed on the substrate 1;
  • the semiconductor layer 3 is disposed on the indium tin oxide layer 2;
  • the pixel definition layer 4 is disposed on the semiconductor layer 4;
  • the semiconductor layer 3 is used to cover the foreign particles 21 on the indium tin oxide layer 2 to make the thickness of the indium tin oxide layer 2 uniform, so as to avoid uneven brightness of bright spots or dark spots caused by the foreign particles 21
  • the problem is to ensure that the overall brightness of the organic light-emitting device is uniform.
  • the thickness of the semiconductor layer 3 ranges from 3nm-10um.
  • the material of the semiconductor layer 3 is a transparent or semi-transparent substance, and its light transmittance is above 80%, for the purpose of not affecting the light transmittance of the device, such as indium zinc oxide (IZO), indium germanium zinc oxide (IGZO) etc.
  • IZO indium zinc oxide
  • IGZO indium germanium zinc oxide
  • the semiconductor layer 3 is prepared by chemical vapor deposition (CVD), physical vapor deposition (PVD), spin coating or printing.
  • the substrate 1 is a thin film transistor substrate.
  • the pixel definition layer 4 includes: a retaining wall structure 41 and a functional layer 42, the retaining wall structure 41 surrounds the semiconductor layer 3; the functional layer 42 is arranged on the entire area surrounded by the retaining wall structure 41 Mentioned on the semiconductor layer 3.
  • the material of the retaining wall structure 41 is a photoresist material to prevent light leakage.
  • the functional layer 42 is produced by inkjet printing.
  • the manufacturing method of the organic light emitting device of the present invention includes the steps:
  • the step of making an indium tin oxide layer specifically, a substrate 1 is provided, and the indium tin oxide layer 2 is fabricated on the substrate 1;
  • the step of fabricating a semiconductor layer specifically, the semiconductor layer 3 is fabricated on the indium tin oxide layer 2 by chemical vapor deposition (CVD), physical vapor deposition (PVD), spin coating or printing, and the semiconductor
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • spin coating or printing and the semiconductor
  • the material of layer 3 is a transparent or semi-transparent substance, and the thickness of the semiconductor layer 3 is in the range of 3nm-10um; the semiconductor layer 3 can cover the foreign particles 21 on the indium tin oxide layer 2 so that the indium tin oxide layer 2 The thickness tends to be more uniform;
  • Patterning processing step specifically, patterning the indium tin oxide layer 2 and the semiconductor layer 3, the patterned area of the indium tin oxide layer 2 and the semiconductor layer 3
  • the light emitting area of the organic light emitting device of the present invention is relatively opposite;
  • the steps of making the pixel definition layer include:
  • a step of fabricating a retaining wall structure which is to form the retaining wall structure 41 around the semiconductor layer 3, and the retaining wall structure 41 partially overlaps the semiconductor layer 3;
  • the beneficial effect of the present invention is to provide an organic light-emitting device and a manufacturing method thereof.
  • the semiconductor layer on the indium tin oxide layer By fabricating the semiconductor layer on the indium tin oxide layer, the foreign particles existing in the indium tin oxide layer can be covered and the foreign particles are avoided.
  • the uneven brightness of bright spots or dark spots caused by the problem ensures that the overall brightness of the organic light-emitting device is uniform.

Abstract

本发明提供一种有机发光器件及其制作方法。有机发光器件从下至上依次包括基板、氧化铟锡层、半导体层以及像素定义层，其中所述半导体层用以覆盖所述氧化铟锡层上的异物颗粒使所述氧化铟锡层厚度均匀。有机发光器件的制作方法包括步骤：制作氧化铟锡层、制作半导体层、图形化处理和制作像素定义层。本发明通过在所述氧化铟锡层上制作所述半导体层，可覆盖住氧化铟锡层存在的异物颗粒，避免异物颗粒处引起的亮点或暗点的亮度不均（mura）问题，保证了有机发光器件整体亮度均匀。

Description

有机发光器件及其制作方法 技术领域
本发明涉及显示领域，尤其涉及一种有机发光器件及其制作方法。
 背景技术
有机发光器件(Organic Light Emitting Diode，OLED)以其良好的自发光特性、高的对比度、快速响应等优势，在显示领域、照明领域以及智能穿戴领域等都得到了广泛的应用。
制备有机发光器件的主要方法有蒸镀法和打印法两种，现在利用全蒸镀方法制备大中小尺寸的有机发光器件的技术相对于打印技术来说已相当成熟，目前已经用于商业化生产，但全蒸镀技术存在材料利用率低，难用于制备高分辨率的器件的问题。打印技术制备器件的材料利用率高达90%以上，其制备器件的成本较全蒸镀技术低17%左右，且打印过程中无需掩模板，可用于高分辨率显示器件的制备。所以制备出大尺寸、高分辨率的有机发光器件是现在显示领域的研究热点。
如图1所示，为现有技术采用打印制作有机发光器件过程结构示意图，打印制程为：在基板1上制作氧化铟锡层2,氧化铟锡层2图形化后制备挡墙结构41（bank），底部的氧化铟锡层2为亲水性物质，周围挡墙结构41为疏水性物质，氧化铟锡层2边缘部分的面积与挡墙结构41重合。但在打印过程中发现，氧化铟锡层2表面有部分像素内有微米级的异物颗粒21，这样在打印完成后干燥就会造成较薄的功能层42出现异物凸起，从而引起器件在发光时出现异物颗粒21处亮点或暗点的亮度不均（mura）问题，带来有机发光器件整体亮度不均情况。
 技术问题
本发明的目的在于，提供一种有机发光器件及其制作方法，可解决氧化铟锡层存在异物颗粒引起的异物颗粒处亮点或暗点的亮度不均问题，避免有机发光器件整体亮度不均情况。
 技术解决方案
为了解决上述问题，本发明提供一种有机发光器件，包括基板；氧化铟锡层，设置于所述基板上；半导体层，设置于所述氧化铟锡层上；以及像素定义层，设置于所述半导体层上；其中，所述半导体层覆盖所述氧化铟锡层使所述氧化铟锡层厚度均匀。
进一步的，其中所述半导体层的厚度范围为3nm-10um。
进一步的，其中所述半导体层的透光率大于80%。
进一步的，其中所述半导体层的材料为铟锌氧化物或铟锗锌氧化物。
进一步的，其中所述半导体层通过化学气相沉积、物理气相沉积、旋涂或打印方式制备。
进一步的，其中所述基板为薄膜晶体管基板。
进一步的，其中所述像素定义层包括：挡墙结构，围绕所述半导体层；以及功能层，设置于由所述挡墙结构围绕的所述半导体层上。
进一步的，其中所述功能层通过喷墨打印方式制作。
本发明又一实施例中提供一种有机发光器件的制作方法，包括步骤：
制作氧化铟锡层步骤，其为提供一基板，在所述基板上制作氧化铟锡层；
制作半导体层步骤，其为在所述氧化铟锡层上采用化学气相沉积、物理气相沉积、旋涂或打印方式制作半导体层，所述半导体层的材料为铟锌氧化物或铟锗锌氧化物，所述半导体层物质膜层的厚度范围为3nm-10um；
图形化处理步骤，其为对所述氧化铟锡层及所述半导体层进行图形化处理，所述氧化铟锡层和所述半导体层图形化后的区域与所述有机发光器件的发光区域相对；
制作像素定义层步骤，其为在所述半导体层上制作所述像素定义层。
进一步的，其中所述制作像素定义层步骤包括：
制作挡墙结构步骤，其为在所述半导体层周围形成挡墙结构，所述挡墙结构与所述半导体层部分重叠；
制作功能层步骤，其为在由所述挡墙结构围绕的所述半导体层上通过喷墨打印方式制作所述功能层。
 有益效果
本发明的有益效果是：提供一种有机发光器件及其制作方法，通过在所述氧化铟锡层上制作所述半导体层，可覆盖住氧化铟锡层存在的异物颗粒，避免异物颗粒处引起的亮点或暗点的亮度不均问题，保证了有机发光器件整体亮度均匀。
 附图说明
图1为现有技术制作有机发光器件过程结构示意图；
图2为本发明一实施例中一种有机发光器件的结构示意图；
图3为本发明一实施例中一种有机发光器件的制作流程图；
图4为图3中制作像素定义层步骤的制作流程图；
图5为图3中制作方法过程的结构示意图。
图中部件标识如下：
1、基板，2、氧化铟锡层，3、半导体层，4、像素定义层，
21、异物颗粒，41、挡墙结构，42、功能层。
 本发明的实施方式
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
请参阅图2所示，在一实施例中，本发明有机发光器件从下至上依次包括基板1、氧化铟锡层2、半导体层3和像素定义层4。具体地讲，所述氧化铟锡层2设置于所述基板1上；所述半导体层3设置于所述氧化铟锡层2上；所述像素定义层4设置于所述半导体层4上；其中，所述半导体层3用以覆盖所述氧化铟锡层2上的异物颗粒21使所述氧化铟锡层2厚度均匀，从而避免在异物颗粒21处引起的亮点或暗点的亮度不均问题，保证了有机发光器件整体亮度均匀。
其中，所述半导体层3的厚度范围为3nm-10um。
其中，所述半导体层3的材料为透明或半透明物质，其透光率在80%以上，以不影响器件透光性为目的，如铟锌氧化物（IZO）、铟锗锌氧化物（IGZO）等。
其中，所述半导体层3通过化学气相沉积（CVD）、物理气相沉积（PVD）、旋涂或打印方式制备。
其中，所述基板1为薄膜晶体管基板。
其中，所述像素定义层4包括：挡墙结构41及功能层42，所述挡墙结构41围绕所述半导体层3；所述功能层42设置于由所述挡墙结构41所围绕的所述半导体层3上。所述挡墙结构41的材料选用光阻物质，防止漏光。
其中，所述功能层42通过喷墨打印方式制作。
请同时参阅图3和图5所示，本发明有机发光器件的制作方法，包括步骤：
S1、制作氧化铟锡层步骤；具体地讲，提供一基板1，在所述基板1上制作所述氧化铟锡层2；
S2、制作半导体层步骤；具体地讲，在所述氧化铟锡层2上采用化学气相沉积（CVD）、物理气相沉积（PVD）、旋涂或打印方式制作所述半导体层3，所述半导体层3的材料为透明或半透明物质，所述半导体层3的厚度范围为3nm-10um；所述半导体层3能够覆盖所述氧化铟锡层2上的异物颗粒21使所述氧化铟锡层2厚度更趋于均匀；
S3、图形化处理步骤；具体地讲，对所述氧化铟锡层2及所述半导体层3进行图形化处理，所述氧化铟锡层2和所述半导体层3被图形化后的区域与本发明有机发光器件的发光区域相对；
S4、制作像素定义层步骤；具体地讲，在所述半导体层3上制作所述像素定义层4。
请参阅图4所示，所述制作像素定义层的步骤包括：
S41、制作挡墙结构步骤，其为在所述半导体层3的周围形成所述挡墙结构41，所述挡墙结构41与所述半导体层3部分重叠；
S42、制作功能层步骤，其为由所述挡墙结构41围绕的所述半导体层3上通过喷墨打印方式制作所述功能层42。
本发明的有益效果是：提供一种有机发光器件及其制作方法，通过在所述氧化铟锡层上制作所述半导体层，可覆盖住所述氧化铟锡层存在的异物颗粒，避免异物颗粒处引起的亮点或暗点的亮度不均问题，保证了有机发光器件整体亮度均匀。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种有机发光器件，其中，包括：
    基板；
    氧化铟锡层，设置于所述基板上；
    半导体层，设置于所述氧化铟锡层上；以及
    像素定义层，设置于所述半导体层上；
    其中，所述半导体层覆盖所述氧化铟锡层使所述氧化铟锡层厚度均匀。
  2. 根据权利要求1所述的有机发光器件，其中，所述半导体层的厚度范围为3nm-10um。
  3. 根据权利要求1所述的有机发光器件，其中，所述半导体层的透光率大于80%。
  4. 根据权利要求1所述的有机发光器件，其中，所述半导体层的制作材料为铟锌氧化物或铟锗锌氧化物。
  5. 根据权利要求1所述的有机发光器件，其中，所述半导体层通过化学气相沉积、物理气相沉积、旋涂或打印方式制备。
  6. 根据权利要求1所述的有机发光器件，其中，所述基板为薄膜晶体管基板。
  7. 根据权利要求1所述的有机发光器件，其中，所述像素定义层包括：
    挡墙结构，围绕所述半导体层；以及
    功能层，设置于由所述挡墙结构围绕的所述半导体层上。
  8. 根据权利要求7所述的有机发光器件，其中，所述功能层通过喷墨打印方式制作。
  9. 一种如权利要求1所述的有机发光器件的制作方法，包括步骤：
    制作氧化铟锡层步骤，其为提供一基板，在所述基板上制作所述氧化铟锡层，所述氧化铟锡层的厚度范围为1um-5um；
    制作半导体层步骤，其为在所述氧化铟锡层上采用化学气相沉积、物理气相沉积、旋涂或打印方式制作所述半导体层，所述半导体层的材料为铟锌氧化物或铟锗锌氧化物，所述半导体层物质膜层的厚度范围为3nm-10um；
    图形化处理步骤，其为对所述氧化铟锡层及所述半导体层进行图形化处理，所述氧化铟锡层和所述半导体层图形化后的区域与所述有机发光器件的发光区域相对；
    制作像素定义层步骤，其为在所述半导体层上制作所述像素定义层。
  10. 根据权利要求9所述的有机发光器件的制作方法，其中，所述制作像素定义层步骤包括：
    制作挡墙结构步骤，其为在所述半导体层周围形成挡墙结构，所述挡墙结构与所述半导体层部分重叠；
    制作功能层步骤，其为在由所述挡墙结构围绕的所述半导体层上通过喷墨打印方式制作所述功能层。
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