WO2018045799A1 - 显示基板及其制作方法、以及显示装置 - Google Patents

显示基板及其制作方法、以及显示装置 Download PDF

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Publication number
WO2018045799A1
WO2018045799A1 PCT/CN2017/090822 CN2017090822W WO2018045799A1 WO 2018045799 A1 WO2018045799 A1 WO 2018045799A1 CN 2017090822 W CN2017090822 W CN 2017090822W WO 2018045799 A1 WO2018045799 A1 WO 2018045799A1
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Prior art keywords
pixel
sub
region
thickness
display substrate
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PCT/CN2017/090822
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English (en)
French (fr)
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李小龙
李艺
许晓伟
刘政
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京东方科技集团股份有限公司
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Priority to US15/737,191 priority Critical patent/US10566399B2/en
Publication of WO2018045799A1 publication Critical patent/WO2018045799A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/126Shielding, e.g. light-blocking means over the TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/351Thickness

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a display substrate, a method of fabricating the same, and a display device.
  • Embodiments of the present disclosure provide a display substrate, a method of fabricating the same, and a display device.
  • a display substrate comprising a plurality of pixel units, the pixel unit comprising a light emitting layer and a pixel defining layer surrounding the light emitting layer.
  • the pixel definition layer includes a first area and a second area.
  • the first region has a first thickness and the second region has a second thickness. The first thickness is greater than the second thickness.
  • the first region and the second region are configured to occlude the vapor deposition material during the evaporation process to form the luminescent layer of a predetermined shape.
  • the pixel unit includes a plurality of sub-pixels.
  • the light emitting layer includes portions respectively disposed in the respective sub-pixels.
  • the pixel definition layer further includes a third region between adjacent two sub-pixels, the third region having a third thickness, the third thickness being less than the first thickness and the second thickness.
  • the first region, the second region, and the third region are configured to occlude the vapor deposition material during the evaporation process to form respective portions of the luminescent layer, respectively.
  • the pixel unit includes a first sub-pixel, a second sub-pixel, and a third sub-pixel.
  • the first sub-pixel is located in one column, and the second sub-pixel and the third sub-pixel are located in another column.
  • the first sub-pixel is a blue sub-pixel
  • the second sub-pixel is a red sub-pixel
  • the third sub-pixel is a green sub-pixel
  • the first sub-pixel, the second sub-pixel, and the third sub-pixel are rectangular.
  • the area of the first sub-pixel is larger than the area of the second sub-pixel and the area of the third sub-pixel, respectively.
  • the first side of the first sub-pixel is parallel to the second sub-pixel and the third sub-pixel, and the second side of the first sub-pixel is perpendicular to the first side.
  • a region adjacent to a second side of the first subpixel is a first region
  • a region between adjacent two subpixels is the third region
  • other regions are second regions.
  • the sides of the second sub-pixel and the third sub-pixel are equal in length.
  • the set value of the first thickness is 1.8 ⁇ m or more and 2.2 ⁇ m or less
  • the set value of the second thickness is 0.7 ⁇ m or more and 1.2 ⁇ m or less
  • the set value of the third thickness is 0.1 or more. ⁇ m is less than or equal to 0.3 ⁇ m.
  • the set value of the first thickness is 2 ⁇ m
  • the set value of the second thickness is 1 ⁇ m
  • the set value of the third thickness is 0.1 ⁇ m.
  • a method of fabricating a display substrate comprising: forming a pixel defining layer of a pixel unit to surround a region for forming a light emitting layer, wherein the pixel defining layer includes a first region and a second a region, the first region having a first thickness, the second region having a second thickness, the first thickness being greater than the second thickness;
  • the light-emitting layer of the pixel unit is formed by vapor deposition, wherein the vapor deposition material is blocked by the first region and the second region during the vapor deposition process.
  • a pixel defining layer is formed using inkjet printing, or a pixel defining layer is formed using photolithography using a grayscale reticle.
  • the pixel unit includes: a first sub-pixel, a second sub-pixel, and The third sub-pixel.
  • the first sub-pixel, the second sub-pixel, and the third sub-pixel are rectangular.
  • the second sub-pixel and the third sub-pixel are disposed in the same column.
  • the area of the first sub-pixel is larger than the area of the second sub-pixel and the area of the third sub-pixel, respectively.
  • the first side of the first sub-pixel is parallel to the second sub-pixel and the third sub-pixel, and the second side of the first sub-pixel is perpendicular to the first side.
  • the pixel definition layer further includes a third region between adjacent two sub-pixels.
  • a region adjacent to a second side of the first sub-pixel is a first region
  • a region between adjacent two sub-pixels is the third region
  • other regions are second regions.
  • the third region has a third thickness, and the third thickness is less than the first thickness and the second thickness.
  • the step of forming a light-emitting layer by vapor deposition comprises: setting a position of the display substrate such that the display substrate is at a second predetermined angle from the horizontal plane, above the evaporation source and toward the evaporation source, wherein the second sub-pixel The area is above the area of the third sub-pixel; the evaporation forms a light-emitting layer in the second sub-pixel, wherein the second area occludes the area of the third sub-pixel, and the first area occludes the area of the first sub-pixel Turning the display substrate such that the display substrate is at a third predetermined angle from the horizontal plane, above the evaporation source and toward the evaporation source, wherein the region of the third sub-pixel is above the region of the second sub-pixel; and vapor deposition forms the third sub-pixel The illuminating layer, wherein the second area occludes the area of the second sub-pixel, the first area occludes the area of the first sub-
  • the second predetermined angle 90 ° - arctan (the second thickness / the length of the side of the third sub-pixel perpendicular to the horizontal direction at the time of evaporation).
  • the third predetermined angle 90 ° - arctan (the second thickness / the length of the side of the second sub-pixel perpendicular to the horizontal direction at the time of evaporation).
  • the first predetermined angle 90 ° - arctan (the second thickness / the length of the side of the third sub-pixel perpendicular to the horizontal direction at the time of evaporation).
  • the substrate is displayed at a predetermined distance from the evaporation source during vapor deposition.
  • the predetermined distance is 1 m.
  • a display panel comprising the above display substrate.
  • a display device comprising the above display panel.
  • the display substrate the method of fabricating the same, and the display device of the embodiments of the present disclosure, it is possible to perform vapor deposition of a plurality of colors of the luminescent material without using a high-precision metal mask, thereby ensuring high vapor deposition precision (for example, 3 ⁇ m) while keeping production costs low.
  • FIG. 1 is a schematic diagram of a pixel arrangement structure according to a first embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of a pixel area of a display substrate according to a second embodiment of the present disclosure
  • FIG. 3 is a flowchart of a method of fabricating a display substrate according to a third embodiment of the present disclosure
  • FIG. 4 is a schematic view of vapor deposition of the second sub-pixel shown in FIG. 1;
  • Figure 5 is a schematic view showing the positional relationship of the respective parts in Figure 4.
  • FIG. 6 is a schematic view of vapor deposition of the third sub-pixel shown in FIG. 1;
  • Figure 7 is a schematic view showing the positional relationship of the respective parts in Figure 6;
  • Figure 8 is a schematic view of vapor deposition of the third sub-pixel shown in Figure 1;
  • Fig. 9 is a schematic view showing the positional relationship of the respective portions in Fig. 8.
  • Embodiments of the present disclosure provide a display substrate including a plurality of pixel units including a light emitting layer and a pixel defining layer surrounding the light emitting layer.
  • the pixel definition layer includes a first area and a second area.
  • the first region has a first thickness and the second region has a second thickness. The first thickness is greater than the second thickness.
  • the light emitting layer may be formed by evaporation.
  • the pixel defining layer may be configured to occlude the vapor deposition material during the evaporation process to obtain a light emitting layer of a predetermined shape.
  • the first region of a larger thickness can block a larger area during evaporation, and the second area of a smaller thickness can block a smaller area during evaporation, and the shape of the light-emitting layer can be further changed by setting different thicknesses. Good control.
  • the pixel unit may include a plurality of sub-pixels.
  • the light emitting layer includes portions respectively disposed in the respective sub-pixels.
  • the pixel definition layer further includes a third region between adjacent two sub-pixels, the third region having a third thickness, the third thickness being less than the first thickness and the second thickness.
  • the first region, the second region, and the third region are configured to occlude the vapor deposition material during the evaporation process to form respective portions of the light-emitting layer, respectively.
  • the third region between adjacent two sub-pixels can effectively prevent mixing between materials of the light-emitting layers of different sub-pixels.
  • the pixels include a first sub-pixel 1, a second sub-pixel 2, and a third sub-pixel 3 of a rectangle.
  • the first sub-pixel 1, the second sub-pixel 2, and the third sub-pixel 3 are arranged in a "pin" shape.
  • the first sub-pixel 1 is located in one column, and the second sub-pixel 2 and the third sub-pixel 3 are located in another column.
  • the area of the first sub-pixel 1 is larger than the second sub-pixel 2 and the third sub-pixel 3.
  • the second sub-pixel 2 and the third sub-pixel 3 are arranged in a line and are parallel to the first side of the first sub-pixel 1.
  • the second side of the first sub-pixel 1 is perpendicular to the first side.
  • the area adjacent to the second side of the first sub-pixel 1 is the first area A1
  • the area between the adjacent two sub-pixels is the third area A3, and the other area is the second area. A2.
  • the first sub-pixel 1 is a blue sub-pixel B
  • the second sub-pixel 2 is a red sub-pixel R
  • the third sub-pixel 3 is a green sub-pixel G.
  • the area of the blue sub-pixel B is made relatively large, which can be guaranteed The intensity of blue light.
  • FIG. 2 is a schematic structural diagram of a pixel region of a display substrate according to a second embodiment of the present disclosure.
  • the display substrate includes the pixel arrangement structure described above, wherein, for the pixel defining layer for forming the light emitting layer, the third region A3 (the pixel defining layer between two adjacent sub-pixels in the pixel) has the smallest thickness, the first region The thickness of A1 (the pixel defining layer adjacent to the second side of the first sub-pixel 1) is the largest, and the thickness of the second region A2 (the remaining pixel defining layer surrounding the luminescent layer) is centered.
  • the value when the thickness of the pixel defining layer is set, the value may be: the thickness (first thickness) of the first region A1 is greater than or equal to 1.8 ⁇ m and less than or equal to 2.2 ⁇ m, and the thickness of the second region A2 (the first) The two thicknesses are 0.7 ⁇ m or more and 1.2 ⁇ m or less, and the thickness A3 (third thickness) of the third region is 0.1 ⁇ m or more and 0.3 ⁇ m or less.
  • the first thickness has an error of ⁇ 0.3 ⁇ m
  • the second thickness has an error of ⁇ 0.15 ⁇ m
  • the third thickness There is an error of ⁇ 0.05 ⁇ m.
  • the first thickness may be twice the second thickness.
  • the value when the thickness of the pixel defining layer is set, the value may be: the first thickness is 2 ⁇ m, the second thickness is 1 ⁇ m, and the third thickness is 0.1 ⁇ m.
  • the actual thickness may be: the first thickness is 2 ⁇ 0.3 ⁇ m, the second thickness is 1 ⁇ 0.15 ⁇ m, and the third thickness is 0.1 ⁇ 0.05 ⁇ m. .
  • FIG. 3 is a flow chart of a method of fabricating a display substrate according to a third embodiment of the present disclosure.
  • the manufacturing method of the display substrate is used for manufacturing the display substrate, comprising: forming a pixel defining layer; setting a substrate position, depositing a second sub-pixel by vapor deposition; flipping the substrate to form a third sub-pixel by evaporation; and flipping the substrate to form a vapor deposition One sub-pixel.
  • each region of different thicknesses of the pixel defining layer is used to occlude the vapor deposition material, and each sub-pixel at a different position is obtained. No need to use a mask, while ensuring accuracy, reducing costs and saving production time.
  • the pixel definition layer PDL may be obtained using an etching process.
  • the pixel defining layer PDL is coated, and the gray scale mask lithography is used to make different regions have different thicknesses.
  • the material removed at the location of the second region is more than the material removed at the location of the first region.
  • the thickness of the pixel defining layer PDL in the intermediate portion between the sub-pixels of the pixel is 0.1 ⁇ m
  • the thickness of the upper and lower sides of the R and G regions is 1 ⁇ m
  • the left side of the B region is 1 ⁇ m and the upper and lower sides are 2 ⁇ m.
  • Post Spacer (PS) coating and patterning can then be completed. Thereafter, the EL layer evaporation of the light-emitting layer can be performed.
  • PS Post Spacer
  • the pixel definition layer PDL may also be obtained by inkjet printing. During inkjet printing, more material is sprayed at the location of the first zone than by the location of the second zone.
  • FIG. 4 is a schematic view of vapor deposition of the second sub-pixel shown in FIG. 1.
  • Fig. 5 is a schematic view showing the positional relationship of the respective portions in Fig. 4.
  • the position of the display substrate is set such that the plane of the display substrate is at a second predetermined angle from the horizontal plane, above the evaporation source, toward the evaporation source and at a predetermined distance from the evaporation source.
  • the area of the second sub-pixel is above the area of the third sub-pixel.
  • the predetermined distance can be 1 m.
  • the vapor deposition material is evaporated from the bottom to the top. Since the vapor deposition source and the display substrate have a certain distance, the vapor deposition material can be approximately vaporized on the display substrate in the vertical direction within the error range. After the display substrate to be evaporated enters the evaporation chamber, the angle is adjusted, so that the first region 4 of the pixel defining layer below the first sub-pixel 1 blocks the region of the first sub-pixel 1, and the pixel definition below the third sub-pixel 3 The second region 6 of the layer blocks the region of the third sub-pixel 3.
  • the first region 5 of the pixel defining layer above the first sub-pixel 1 and the second region 8 of the pixel defining layer above the second sub-pixel 2 are respectively used to block the region of the first sub-pixel 1 of the adjacent pixel and the third region Subpixel 3 Area.
  • a blank region 9 is formed below the second sub-pixel 2 region.
  • the blank area 9 can further prevent color mixing and does not affect the light-emitting effect of the pixels.
  • L1 is the length of the first side of the first sub-pixel 1
  • L2 is the length of the first side of the pre-set second sub-pixel 2
  • L3 is the first of the preset third sub-pixel 3.
  • the length of the side (the length of the side perpendicular to the horizontal direction during vapor deposition).
  • L2 can be equal to L3.
  • D1 is the thickness of the pixel defining layers 4, 5 adjacent to the second side of the first sub-pixel 1 (ie, the first thickness of the first area A1)
  • D2 is the pixel defining layer 6 and the second below the third sub-pixel 3.
  • the pixel above the sub-pixel 2 defines the thickness of the layer 8 (ie, the second thickness of the second region A2), and D3 is the thickness of the pixel defining layer 7 between the second sub-pixel 2 and the third sub-pixel 3 (ie, the third The thickness of the area A3).
  • the vapor deposition material of the second sub-pixel 2 can be vapor-deposited for the length indicated by L2 in the figure. Because of the presence of the third area A3, part of the vapor deposition material is blocked, and a blank area 9 is produced, and L9 is the length of the blank area 9.
  • FIG. 6 is a schematic view of vapor deposition of the third sub-pixel shown in FIG.
  • evaporating the third sub-pixel first, flipping the display substrate such that the display substrate is at a third predetermined angle from the horizontal plane, above the evaporation source, toward the evaporation source and at a predetermined distance from the evaporation source, and the region of the third sub-pixel is in the second Above the area of the sub-pixel. Then, evaporation is performed, in which case the second region occludes the region of the second sub-pixel, and the first region occludes the region of the first sub-pixel.
  • Fig. 7 is a schematic view showing the positional relationship of the respective portions in Fig. 6.
  • the thicknesses of the pixel defining layer 6 and the pixel defining layer 8 are set to be the same, so that L2 can be equal to L3, and after flipping, the angle between the plane of the display substrate and the horizontal direction is still ⁇ , and The angle in the vertical direction is still ⁇ , except that the third sub-pixel is located above the second sub-pixel, and the other positional relationships are exactly the same as shown in FIG. This arrangement simplifies the evaporation process.
  • D1 is twice that of D2
  • L1 is twice that of L2 or L3
  • L1 is the sum of L2 and L3, which further simplifies the evaporation process and can also simplify the fabrication process of the entire pixel definition layer.
  • the lengths of the sides adjacent to the second sub-pixel 2 and the third sub-pixel 3 can be made equal, which also simplifies the process and improves efficiency.
  • the above relationship is not essential.
  • unequal L2 and L3 may be required, which may be simply changed by changing the pixel definition layer 6 and the pixel definition.
  • the thickness of layer 8 is achieved.
  • the thickness of the pixel defining layer 8 is increased, that is, more vapor deposition material can be blocked, so that L3 becomes smaller than L2.
  • L1 may not be equal to the sum of L2 and L3. That is, among the respective regions in the pixel defining layer, the values of the thicknesses of the different positions can be further adjusted and set to be different. Therefore, various values or relationships exemplified in the above embodiments may be adjusted according to an actual application environment.
  • FIG. 8 is a schematic view of vapor deposition of the third sub-pixel shown in FIG. Fig. 9 is a schematic view showing the positional relationship of the respective portions in Fig. 8.
  • the display substrate is flipped so that the display substrate is at a first predetermined angle from the horizontal plane, above the evaporation source, toward the evaporation source and at a predetermined distance from the evaporation source, and the region of the first sub-pixel is in the second sub-pixel. And above the area of the third sub-pixel.
  • the light emitting layer in the first sub-pixel is evaporated, wherein the second region blocks the regions of the second sub-pixel and the third sub-pixel.
  • ⁇ in Fig. 5 or Fig. 7 may be used.
  • the display substrate can be rotated by 90° along an axis perpendicular to itself, so that the regions of the vaporized second sub-pixel 2 and the third sub-pixel 3 are located in the vapor deposition shadow region, thereby completing The evaporation of the first sub-pixel 1 is performed.
  • the second region 10 of the pixel defining layer adjacent to the second sub-pixel 2 and the third sub-pixel 3 blocks the regions of the second sub-pixel 2 and the third sub-pixel 3.
  • the second region 11 of the pixel defining layer adjacent to the first sub-pixel 1 blocks the regions of the second sub-pixel 2 and the third sub-pixel 3 of the adjacent pixel.
  • a high-precision evaporation process is completed in combination with a pixel arrangement structure, a thickness distribution of a pixel defining layer PDL, and a form of spin evaporation, which can eliminate a high-precision metal mask FMM, and thus is largely It can save the cost and difficulty of manufacturing products, and can improve the accuracy and reduce the color mixture.
  • Embodiments of the present disclosure are applicable to products requiring an evaporation process, such as organic light-emitting diode OLED products, including low temperature polysilicon active matrix organic light emitting diodes (LTPS AMOLED) using low temperature polysilicon technology widely used in recent years. product.
  • LTPS AMOLED low temperature polysilicon active matrix organic light emitting diodes
  • a display panel including the above display substrate.
  • a display device including the above display panel.
  • the display device can be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.

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Abstract

一种显示基板及其制作方法、以及显示装置。显示基板包括多个像素单元,像素单元包括发光层及围绕发光层的像素定义层。像素定义层包括第一区域(A1)和第二区域(A2)。第一区域(A1)具有第一厚度,第二区域(A2)具有第二厚度。第一厚度大于第二厚度。故不需要使用高精度金属掩模即可以完成多种颜色的发光材料的蒸镀,在保证较高的蒸镀精度的同时保持较低的生产成本。

Description

显示基板及其制作方法、以及显示装置
相关申请的交叉引用
本申请要求2016年09月06日递交的中国专利申请第201610805295.9号的优先权,在此全文引用上述中国专利申请所公开的内容以作为本申请的一部分。
技术领域
本公开涉及显示技术领域,尤其涉及显示基板及其制作方法、以及显示装置。
背景技术
近年来,有机发光面板得到广泛应用。在制作有机发光面板时,需要蒸镀发光材料。在常规的方法中,使用高精度金属掩模(FMM)进行蒸镀。使用高精度金属掩模时,存在掩模(Mask)制作成本较高,且掩模容易受到重力影响变形而导致混色的现象。
发明内容
本公开的实施例提供了显示基板及其制作方法、以及显示装置。
根据本公开的第一方面,提供了一种显示基板,包括多个像素单元,像素单元包括发光层及围绕发光层的像素定义层。像素定义层包括第一区域和第二区域。第一区域具有第一厚度,第二区域具有第二厚度。第一厚度大于第二厚度。
在本公开的实施例中,第一区域和第二区域被配置为在蒸镀过程中对于蒸镀材料进行遮挡,以形成预定形状的发光层。
在本公开的实施例中,像素单元包括多个子像素。发光层包括分别设置于各个子像素中的部分。像素定义层还包括位于相邻两个子像素之间的第三区域,第三区域具有第三厚度,第三厚度小于第一厚度、第二厚度。
在本公开的实施例中,第一区域、第二区域和第三区域被配置为在蒸镀过程中对于蒸镀材料进行遮挡,以分别形成发光层的各个部分。
在本公开的实施例中,像素单元包括第一子像素、第二子像素和第三子像素。第一子像素位于一列,第二子像素以及第三子像素位于另一列。
在本公开的实施例中,第一子像素是蓝色子像素,第二子像素是红色子像素,第三子像素是绿色子像素。
在本公开的实施例中,第一子像素、第二子像素以及第三子像素是矩形。第一子像素的面积分别大于第二子像素的面积、第三子像素的面积。第一子像素的第一边与第二子像素、第三子像素所在列平行,第一子像素的第二边与第一边垂直。在围绕发光层的像素定义层中,与第一子像素的第二边邻接的区域是第一区域,相邻两个子像素之间的区域是所述第三区域,其它区域是第二区域。
本公开的实施例中,所述第二子像素和第三子像素相邻的边的长度相等。
在本公开的实施例中,第一厚度的设定值大于等于1.8μm小于等于2.2μm,第二厚度的设定值大于等于0.7μm小于等于1.2μm,第三厚度的设定值大于等于0.1μm小于等于0.3μm。
在本公开的实施例中,第一厚度的设定值是2μm,第二厚度的设定值是1μm,第三厚度的设定值是0.1μm。
根据本公开的第二个方面,提供了一种显示基板的制作方法,包括:形成像素单元的像素定义层,以围绕用于形成发光层的区域,其中像素定义层包括第一区域和第二区域,第一区域具有第一厚度,第二区域具有第二厚度,第一厚度大于第二厚度;以及
蒸镀形成像素单元的发光层,其中,在蒸镀过程中,利用第一区域和第二区域对蒸镀材料进行遮挡。
在本公开的实施例中,使用喷墨打印形成像素定义层,或者使用采用了灰阶掩模版的光刻法形成像素定义层。
在本公开的实施例中,像素单元包括:第一子像素、第二子像素以及 第三子像素。第一子像素、第二子像素以及第三子像素是矩形。第二子像素、第三子像素设置于同一列。第一子像素的面积分别大于第二子像素的面积、第三子像素的面积。第一子像素的第一边与第二子像素、第三子像素所在列平行,第一子像素的第二边与第一边垂直。像素定义层还包括位于相邻两个子像素之间的第三区域。在像素定义层中,与第一子像素的第二边邻接的区域是第一区域,相邻两个子像素之间的区域是所述第三区域,其它区域是第二区域。第三区域具有第三厚度,第三厚度小于第一厚度、第二厚度。
在本公开的实施例中,蒸镀形成发光层的步骤包括:设置显示基板的位置,使得显示基板与水平面成第二预定角度,位于蒸发源上方并朝向蒸发源,其中,第二子像素的区域在第三子像素的区域的上方;蒸镀形成第二子像素中的发光层,其中,第二区域对于第三子像素的区域进行遮挡,第一区域对于第一子像素的区域进行遮挡;翻转显示基板,使得显示基板与水平面成第三预定角度,位于蒸发源上方并朝向蒸发源,其中,第三子像素的区域在第二子像素的区域的上方;蒸镀形成第三子像素中的发光层,其中第二区域对于第二子像素的区域进行遮挡,第一区域对于第一子像素的区域进行遮挡;翻转显示基板,使得显示基板与水平面成第一预定角度,位于蒸发源上方并朝向蒸发源,其中,第一子像素的区域在第二子像素和第三子像素的区域的上方;以及蒸镀形成第一子像素中的发光层,其中,第二区域对于第二子像素和第三子像素的区域进行遮挡。
在本公开的实施例中,蒸镀时,第一子像素、第二子像素、第三子像素的每个的四条边中的两条与水平方向平行,另外两条垂直于水平方向。第二预定角度=90°-arctan(第二厚度/蒸镀时第三子像素垂直于水平方向的边的长度)。第三预定角度=90°-arctan(第二厚度/蒸镀时第二子像素垂直于水平方向的边的长度)。第一预定角度=90°-arctan(第二厚度/蒸镀时第三子像素垂直于水平方向的边的长度)。
在本公开的实施例中,蒸镀时,显示基板距离蒸发源预定距离。
在本公开的实施例中,预定距离是1m。
根据本公开的第三个方面,提供了一种显示面板,包括上述的显示基板。
根据本公开的第四个方面,提供了一种显示装置,包括上述的显示面板。
根据本公开的实施例的显示基板及其制作方法、以及显示装置,不需要使用高精度金属掩模即可以完成多种颜色的发光材料的蒸镀,在保证较高的蒸镀精度(例如,3μm)的同时保持较低的生产成本。
附图说明
为了更清楚地说明本公开的实施例的技术方案,下面将对实施例的附图进行简要说明,应当知道,以下描述的附图仅仅涉及本公开的一些实施例,而非对本公开的限制,其中:
图1是本公开第一实施例提供的像素排列结构的示意图;
图2是本公开第二实施例提供的显示基板的一个像素区域的结构示意图;
图3是本公开第三实施例提供的显示基板的制作方法的流程图;
图4是蒸镀图1中所示的第二子像素的示意图;
图5是图4中各个部分的位置关系的示意图;
图6是蒸镀图1中所示的第三子像素的示意图;
图7是图6中各个部分的位置关系的示意图;
图8是蒸镀图1中所示的第三子像素的示意图;
图9是图8中各个部分的位置关系的示意图。
具体实施方式
为了使本公开的实施例的技术方案和优点更加清楚,下面将结合附图,对本公开的实施例的技术方案进行清楚、完整的描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域技术人员在无需创造性劳动的前提下所获得的所有其 他实施例,也都属于本公开保护的范围。
本公开的实施例提供了一种显示基板,包括多个像素单元,像素单元包括发光层及围绕发光层的像素定义层。像素定义层包括第一区域和第二区域。第一区域具有第一厚度,第二区域具有第二厚度。第一厚度大于第二厚度。
发光层可以由蒸镀形成。像素定义层可以被配置为在蒸镀过程中对于蒸镀材料进行遮挡,以得到预定形状的发光层。较大厚度的第一区域能够在蒸镀时遮挡更大的区域,较小厚度的第二区域能够在蒸镀时遮挡较小的区域,通过不同厚度的设置,可以对于发光层的形状进行更好的控制。
像素单元可以包括多个子像素。发光层包括分别设置于各个子像素中的部分。像素定义层还包括位于相邻两个子像素之间的第三区域,第三区域具有第三厚度,第三厚度小于第一厚度、第二厚度。
在蒸镀时,第一区域、第二区域和第三区域被配置为在蒸镀过程中对于蒸镀材料进行遮挡,以分别形成所述发光层的各个部分。相邻两个子像素之间的第三区域可以有效的防止不同子像素的发光层的材料之间的混合。
图1是本公开第一实施例提供的像素排列结构的示意图。在像素排列结构中,像素包括矩形的第一子像素1、第二子像素2和第三子像素3。第一子像素1、第二子像素2以及第三子像素3呈“品”字形排列。第一子像素1位于一列,第二子像素2、第三子像素3位于另一列。第一子像素1面积大于第二子像素2、第三子像素3。第二子像素2和第三子像素3排成一列并与第一子像素1的第一边平行。第一子像素1的第二边与第一边垂直。在围绕发光层的像素定义层中,与第一子像素1的第二边邻接的区域是第一区域A1,相邻两个子像素之间的区域是第三区域A3,其它区域是第二区域A2。
在本公开的实施例中,第一子像素1是蓝色子像素B,第二子像素2是红色子像素R,第三子像素3是绿色子像素G。
根据本公开的实施例,使得蓝色子像素B的面积相对较大,能够保证 蓝色光的强度。
图2是本公开第二实施例提供的显示基板的一个像素区域的结构示意图。显示基板包括上述的像素排列结构,其中,对于用于形成发光层的像素定义层,第三区域A3(在像素中的两个相邻子像素之间的像素定义层)厚度最小,第一区域A1(邻近第一子像素1的第二边的像素定义层)的厚度最大,第二区域A2(其余围绕发光层的像素定义层)的厚度居中。
在本公开的实施例中,在设置像素定义层的厚度时,可以取值为:第一区域A1的厚度(第一厚度)大于等于1.8μm小于等于2.2μm,第二区域A2的厚度(第二厚度)大于等于0.7μm小于等于1.2μm,第三区域的厚度A3(第三厚度)是大于等于0.1μm小于等于0.3μm。
考虑到实际加工的精度和对于预设值的细微调整,实际厚度和设定厚度将存在误差,例如,第一厚度存在±0.3μm的误差,第二厚度存在±0.15μm的误差,第三厚度存在±0.05μm的误差。
在本公开的实施例中,第一厚度可以是第二厚度的2倍。
在本公开的实施例中,在设置像素定义层的厚度时,可以取值为:第一厚度是2μm,第二厚度是1μm,第三厚度是0.1μm。
此时,考虑到实际加工的精度和对于预设值的细微调整,实际的厚度可能是:第一厚度是2±0.3μm,第二厚度是1±0.15μm,第三厚度是0.1±0.05μm。
图3是本公开第三实施例提供的显示基板的制作方法的流程图。显示基板的制作方法用于制作上述的显示基板,包括:形成像素定义层;设置基板位置,蒸镀形成第二子像素;翻转基板,蒸镀形成第三子像素;翻转基板,蒸镀形成第一子像素。
根据本公开的实施例提供的制作方法,在形成了预定的像素定义层之后。在蒸镀过程中,利用像素定义层的不同厚度的各个区域对于蒸镀材料进行遮挡,得到了不同位置的各个子像素。无需使用掩模,在保证精度的同时,减少了成本,并节约了制作时间。
在本公开的实施例中,可以使用刻蚀工艺得到像素定义层PDL。在玻 璃基板完成像素电极层(Pixel Layer,PXL)沉积及图案化后,涂覆像素定义层PDL,并且使用灰阶掩模光刻,使得不同区域具有不同的厚度。在光刻的过程中,在第二区域的位置去除的材料多于在第一区域的位置去除的材料。其中像素的各子像素之间的中间区域的像素定义层PDL厚度为0.1μm,R和G区域的上下及右侧厚度为1μm,B区域左侧为1μm上下两侧为2μm。随后还可以完成柱状隔垫物(Post Spacer,PS)涂覆及图案化。之后,即可以进行发光层EL材料蒸镀。
在本公开的实施例中,也可以采用喷墨打印得到像素定义层PDL。在喷墨打印的过程中,在第一区域的位置喷涂的材料多于在第二区域的位置喷涂的材料。
以下结合图4~9,对于各个子像素的蒸镀过程进行具体的说明。
图4是蒸镀图1中所示的第二子像素的示意图。图5是图4中各个部分的位置关系的示意图。
首先,设置显示基板的位置,使得显示基板所在平面与水平面成第二预定角度,位于蒸发源上方、朝向蒸发源并距离蒸发源预定距离。第二子像素的区域在第三子像素的区域的上方。预定距离可以是1m。
所述第一子像素、所述第二子像素、所述第三子像素的每个的四条边中的两条(为了便于描述,在以下的说明中称为第二边)与水平方向平行,另外两条(为了便于描述,在以下的说明中称为第一边)垂直于水平方向;
然后,进行蒸镀,像素定义层的第二区域对于第三子像素的区域进行遮挡,第一区域对于第一子像素的区域进行遮挡。
如图4和图5所示,蒸镀材料从下向上蒸发,由于蒸镀源与显示基板存在一定距离,在误差范围内可近似认为蒸镀材料沿竖直方向蒸镀到显示基板上。待蒸镀的显示基板进入蒸镀腔室后调整角度,使得第一子像素1下方的像素定义层的第一区域4遮挡第一子像素1的区域,第三子像素3的下方的像素定义层的第二区域6遮挡第三子像素3的区域。第一子像素1上方的像素定义层的第一区域5,第二子像素2的上方的像素定义层的第二区域8分别用于遮挡相邻像素的第一子像素1的区域和第三子像素3 的区域。
此外,由于第二子像素2和第三子像素3之间的像素定义层的第三区域7的遮挡,在第二子像素2区域的下方会形成空白区域9。空白区域9能够进一步防止混色,并且也不会影响像素的发光效果。
在图5中,L1为第一子像素1的第一边的长度,L2为预设定的第二子像素2第一边的长度,L3为预设定的第三子像素3的第一边的长度(蒸镀时与水平方向垂直的边的长度)。L2可以等于L3。D1为邻近第一子像素1的第二边的像素定义层4、5的厚度(即第一区域A1的第一厚度),D2为第三子像素3的下方的像素定义层6和第二子像素2的上方的像素定义层8的厚度(即第二区域A2的第二厚度),D3为第二子像素2和第三子像素3之间的像素定义层7的厚度(即第三区域A3的厚度)。
如果没有第三区域A3,则图中L2所指示的长度上均可以被蒸镀上第二子像素2的蒸镀材料。因为第三区域A3的存在,遮挡了部分的蒸镀材料,产生了空白区域9,L9是空白区域9的长度。
显示基板所在平面与水平面的夹角为α,与竖直方向的夹角为β,这些角度与像素定义层厚度以及像素区域的长度之间具有固定的关系,可以用下式表示:α=90°-β=90°-arctan(D2/L3)=90°-arctan(D3/L9),其中,当L1=40μm,L2=L3=20μm,D1=2μm,D2=1μm,D3=0.1μm时,L9=2μm,α=90°-arctan0.05。即,如图4和图5所示,α与第二厚度、第三子像素3的平行于第一子像素1延伸方向的边的长度相关。
图6是蒸镀图1中所示的第三子像素的示意图。在蒸镀第三子像素时,首先,翻转显示基板,使得显示基板与水平面成第三预定角度,位于蒸发源上方、朝向蒸发源并距离蒸发源预定距离,第三子像素的区域在第二子像素的区域的上方。然后,进行蒸镀,此时第二区域对于第二子像素的区域进行遮挡,第一区域对于第一子像素的区域进行遮挡。
图7是图6中各个部分的位置关系的示意图。如图5和图7所示,作为示例,像素定义层6和像素定义层8的厚度设定为相同,使得L2可以等于L3,并且翻转后,显示基板所在平面与水平方向的夹角仍然为α,与 竖直方向的夹角仍然为β,区别仅在于第三子像素位于第二子像素的上方,其它位置关系与图5中所示完全相同。这样的设置可以简化蒸镀的过程。同理,设定D1是D2的两倍,L1为L2或者L3的两倍,L1为L2和L3之和,这样可以进一步简化蒸镀的过程,并且也可以简化整个像素定义层的制作过程。另外可以使第二子像素2和第三子像素3相邻的边的长度相等,这样也可以简化工艺,提高效率。
应当理解,上述关系并不是必须的,例如,在第二子像素2与第三子像素3形状不同时,可能需要不相等的L2和L3,这可以简单的通过改变像素定义层6和像素定义层8的厚度来实现。例如,参考图7,增加像素定义层8的厚度,即可以遮挡更多的蒸镀材料,使得L3变小而小于L2。同理,L1也可以不等于L2和L3之和。即,在像素定义层中的各个区域之中,不同位置的厚度的值可以进一步的被调整,而被设置为不同。因此,上述实施例中举例列出的各种值或者关系均可以根据实际的应用环境而调整。
图8是蒸镀图1中所示的第三子像素的示意图。图9是图8中各个部分的位置关系的示意图。如图8和图9所示,翻转显示基板,使得显示基板与水平面成第一预定角度,位于蒸发源上方、朝向蒸发源并距离蒸发源预定距离,第一子像素的区域在第二子像素和第三子像素的区域的上方。蒸镀第一子像素中的发光层,其中,第二区域对于第二子像素和第三子像素的区域进行遮挡。第一预定角度也可以取值为α’=90°-β’=90°-arctan(第二厚度/蒸镀时第三子像素垂直于水平方向的边的长度)。或者,α’=90°-β’=90°-arctan(第二厚度/蒸镀时第二子像素垂直于水平方向的边的长度)。即,如图8和图9所示,α’与第二厚度、第三子像素3的垂直于第一子像素1延伸方向的边的长度相关。
作为示例,在第二子像素2以及第三子像素3为正方形时,可以有图5或者图7中的α=图9中的α’。
在本公开的实施例中,可使显示基板沿垂直于自身的轴线旋转90°,使已蒸镀的第二子像素2和第三子像素3的区域位于蒸镀阴影区,从而完 成第一子像素1的蒸镀。像素定义层的邻近第二子像素2和第三子像素3的第二区域10遮挡第二子像素2和第三子像素3的区域。像素定义层的邻近第一子像素1的第二区域11遮挡相邻像素的第二子像素2和第三子像素3的区域。
根据本公开的实施例,结合像素排列结构、像素定义层PDL的厚度分布以及旋转蒸镀的形式完成高精度的蒸镀过程,此过程可以省去高精度金属掩模FMM,因此在很大程度可以节约制造产品的成本及难度,并且可以提高精度,减少混色。本公开的实施例适用于需要进行蒸镀工艺的产品,例如有机发光二极体OLED产品,包括采用了近年来广泛应用的低温多晶硅技术的低温多晶硅有源矩阵有机发光二极体(LTPS AMOLED)产品。
根据本公开的第四实施例,提供了一种显示面板,包括上述的显示基板。
根据本公开的第五实施例,提供了一种显示装置,包括上述的显示面板。显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是,以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式,然而本公开并不局限于此。对于本领域内的普通技术人员而言,在不脱离本公开的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本公开的保护范围。

Claims (18)

  1. 一种显示基板,包括多个像素单元,其中,所述像素单元包括发光层及围绕所述发光层的像素定义层;
    其中,所述像素定义层包括第一区域和第二区域;所述第一区域具有第一厚度,所述第二区域具有第二厚度;所述第一厚度大于所述第二厚度。
  2. 根据权利要求1所述的显示基板,其中,
    所述第一区域和所述第二区域被配置为在蒸镀过程中对于蒸镀材料进行遮挡,以形成预定形状的所述发光层。
  3. 根据权利要求1所述的显示基板,其中,所述像素单元包括多个子像素;所述发光层包括分别设置于各个子像素中的部分;
    所述像素定义层还包括位于相邻两个子像素之间的第三区域,所述第三区域具有第三厚度,所述第三厚度小于第一厚度、第二厚度。
  4. 根据权利要求3所述的显示基板,其中,
    所述第一区域、所述第二区域和所述第三区域被配置为在蒸镀过程中对于蒸镀材料进行遮挡,以分别形成所述发光层的各个部分。
  5. 根据权利要求3所述的显示基板,其中,所述像素单元包括第一子像素、第二子像素和第三子像素;所述第一子像素位于一列,所述第二子像素以及所述第三子像素位于另一列。
  6. 根据权利要求5所述的显示基板,其中,所述第一子像素是蓝色子像素,所述第二子像素是红色子像素,所述第三子像素是绿色子像素。
  7. 根据权利要求5至6中任一项所述的显示基板,其中,
    所述第一子像素、第二子像素以及第三子像素是矩形;所述第一子像素的面积分别大于所述第二子像素的面积、所述第三子像素的面积;
    所述第一子像素的第一边与第二子像素、第三子像素所在列平行,所述第一子像素的第二边与第一边垂直;
    在所述像素定义层中,与所述第一子像素的第二边邻接的区域是所述第一区域,相邻两个子像素之间的区域是所述第三区域,其它区域是所述第二区域。
  8. 根据权利要求7所述的显示基板,其中,所述第二子像素和第三子像素相邻的边的长度相等。
  9. 根据权利要求7所述的显示基板,其中,所述第一厚度的设定值大于等于1.8μm小于等于2.2μm,所述第二厚度的设定值大于等于0.7μm小于等于1.2μm,所述第三厚度的设定值大于等于0.1μm小于等于0.3μm。
  10. 根据权利要求9所述的显示基板,其中,所述第一厚度的设定值是2μm,所述第二厚度的设定值是1μm,所述第三厚度的设定值是0.1μm。
  11. 一种显示基板的制作方法,包括:
    形成像素单元的像素定义层,以围绕用于形成发光层的区域;其中,所述像素定义层包括第一区域和第二区域;所述第一区域具有第一厚度,所述第二区域具有第二厚度;所述第一厚度大于所述第二厚度;以及
    蒸镀形成像素单元的发光层;其中,在蒸镀过程中,利用所述第一区域和所述第二区域对蒸镀材料进行遮挡。
  12. 根据权利要求11所述的显示基板的制作方法,其中,使用喷墨打印形成所述像素定义层,或者使用采用了灰阶掩模版的光刻法形成所述像素定义层。
  13. 根据权利要求11所述的显示基板的制作方法,其中,所述像素单元包括:第一子像素、第二子像素以及第三子像素;
    所述第一子像素、第二子像素以及第三子像素是矩形;所述第二子像素、第三子像素设置于同一列;所述第一子像素的面积分别大于所述第二子像素的面积、所述第三子像素的面积;所述第一子像素的第一边与第二子像素、第三子像素所在列平行,所述第一子像素的第二边与第一边垂直;
    所述像素定义层还包括位于相邻两个子像素之间的第三区域;
    在所述像素定义层中,与所述第一子像素的第二边邻接的区域是所述第一区域,相邻两个子像素之间的区域是所述第三区域,其它区域是所述第二区域;所述第三区域具有第三厚度,所述第三厚度小于所述第一厚度、所述第二厚度。
  14. 根据权利要求13所述的显示基板的制作方法,其中,
    蒸镀形成像素单元的发光层的步骤包括:
    设置显示基板的位置,使得所述显示基板与水平面成第二预定角度,位于蒸发源上方并朝向蒸发源;所述第二子像素的区域在所述第三子像素的区域的上方;
    蒸镀形成第二子像素中的发光层,其中,所述第二区域对于所述第三子像素的区域进行遮挡,所述第一区域对于所述第一子像素的区域进行遮挡;
    翻转所述显示基板,使得所述显示基板与水平面成第三预定角度,位于蒸发源上方并朝向蒸发源,所述第三子像素的区域在所述第二子像素的区域的上方;
    蒸镀形成第三子像素中的发光层,其中,所述第二区域对于所述第二子像素的区域进行遮挡,所述第一区域对于所述第一子像素的区域进行遮挡;
    翻转所述显示基板,使得所述显示基板与水平面成第一预定角度,位于蒸发源上方并朝向蒸发源,所述第一子像素的区域在所述第二子像素和第三子像素的区域的上方;以及
    蒸镀形成第一子像素中的发光层,其中,所述第二区域对于所述第二子像素和所述第三子像素的区域进行遮挡。
  15. 根据权利要求14所述的显示基板的制作方法,其中,
    蒸镀时,所述第一子像素、所述第二子像素、所述第三子像素的每个的四条边中的两条与水平方向平行,另外两条垂直于水平方向;
    所述第二预定角度=90°-arctan(第二厚度/蒸镀时第三子像素垂直于水平方向的边的长度);
    所述第三预定角度=90°-arctan(第二厚度/蒸镀时第二子像素垂直于水平方向的边的长度);
    所述第一预定角度=90°-arctan(第二厚度/蒸镀时第三子像素垂直于水平方向的边的长度)。
  16. 根据权利要求14或15中任一项所述的显示基板的制作方法,其 中,蒸镀时,所述显示基板距离蒸发源预定距离。
  17. 根据权利要求16所述的显示基板的制作方法,其中,所述预定距离是1m。
  18. 一种显示装置,包括权利要求1-10任一项所述的显示基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109182964A (zh) * 2018-08-31 2019-01-11 云谷(固安)科技有限公司 掩膜板排版方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106373982B (zh) * 2016-09-06 2017-11-24 京东方科技集团股份有限公司 显示基板及其制作方法、以及显示装置
US10790338B2 (en) * 2017-07-05 2020-09-29 Sakai Display Products Corporation Organic EL display apparatus and method of manufacturing organic EL display apparatus
CN108062185B (zh) * 2018-01-31 2022-02-01 京东方科技集团股份有限公司 触控组件及其制造方法、显示装置
CN110085623B (zh) * 2018-05-09 2021-04-06 广东聚华印刷显示技术有限公司 像素结构及其制备方法和显示装置
CN108630734B (zh) * 2018-05-11 2021-01-15 京东方科技集团股份有限公司 像素界定结构及其制备方法以及显示面板和显示装置
CN109023257B (zh) * 2018-09-19 2021-02-23 京东方科技集团股份有限公司 蒸镀薄膜的蒸镀方法及制作设备、蒸镀薄膜、显示装置
CN110265456B (zh) 2019-06-27 2022-03-08 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN110473988B (zh) * 2019-08-02 2020-11-10 武汉华星光电半导体显示技术有限公司 一种显示面板制程用掩模版及其应用
CN111710696B (zh) * 2020-06-04 2023-06-30 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
CN112258986B (zh) * 2020-10-21 2023-03-24 合肥维信诺科技有限公司 透光显示面板、制备方法和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294869A (en) * 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
CN1874000A (zh) * 2006-06-26 2006-12-06 友达光电股份有限公司 全彩有机电致发光显示面板及其制造方法
CN103378126A (zh) * 2012-04-24 2013-10-30 三星显示有限公司 有机发光二极管显示器及其制造方法
CN104659069A (zh) * 2014-12-17 2015-05-27 上海天马有机发光显示技术有限公司 一种有机发光显示装置及其制作方法
CN105870158A (zh) * 2016-06-02 2016-08-17 京东方科技集团股份有限公司 Oled面板、oled器件制作方法、用于oled的像素布图的掩膜结构
CN106373982A (zh) * 2016-09-06 2017-02-01 京东方科技集团股份有限公司 显示基板及其制作方法、以及显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4572821B2 (ja) * 2005-11-30 2010-11-04 セイコーエプソン株式会社 グレイスケールマスク、マイクロレンズの製造方法
KR100836471B1 (ko) * 2006-10-27 2008-06-09 삼성에스디아이 주식회사 마스크 및 이를 이용한 증착 장치
US10333066B2 (en) * 2013-06-28 2019-06-25 Boe Technology Group Co., Ltd. Pixel definition layer and manufacturing method thereof, display substrate and display device
JP2016091953A (ja) * 2014-11-10 2016-05-23 株式会社ジャパンディスプレイ 表示装置
CN104465671B (zh) * 2014-12-26 2016-08-31 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN104617128B (zh) * 2015-01-23 2017-08-11 京东方科技集团股份有限公司 一种显示面板及其制作方法和显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294869A (en) * 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
CN1874000A (zh) * 2006-06-26 2006-12-06 友达光电股份有限公司 全彩有机电致发光显示面板及其制造方法
CN103378126A (zh) * 2012-04-24 2013-10-30 三星显示有限公司 有机发光二极管显示器及其制造方法
CN104659069A (zh) * 2014-12-17 2015-05-27 上海天马有机发光显示技术有限公司 一种有机发光显示装置及其制作方法
CN105870158A (zh) * 2016-06-02 2016-08-17 京东方科技集团股份有限公司 Oled面板、oled器件制作方法、用于oled的像素布图的掩膜结构
CN106373982A (zh) * 2016-09-06 2017-02-01 京东方科技集团股份有限公司 显示基板及其制作方法、以及显示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109182964A (zh) * 2018-08-31 2019-01-11 云谷(固安)科技有限公司 掩膜板排版方法
CN109182964B (zh) * 2018-08-31 2019-11-15 云谷(固安)科技有限公司 掩膜板排版方法
US11021784B2 (en) 2018-08-31 2021-06-01 Yungu (Gu'an) Technology Co., Ltd. Method of mask layout

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