WO2021047610A1 - 掩膜装置及其制造方法、蒸镀方法、显示装置 - Google Patents

掩膜装置及其制造方法、蒸镀方法、显示装置 Download PDF

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Publication number
WO2021047610A1
WO2021047610A1 PCT/CN2020/114594 CN2020114594W WO2021047610A1 WO 2021047610 A1 WO2021047610 A1 WO 2021047610A1 CN 2020114594 W CN2020114594 W CN 2020114594W WO 2021047610 A1 WO2021047610 A1 WO 2021047610A1
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WIPO (PCT)
Prior art keywords
mask
area
strip
holes
frame
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PCT/CN2020/114594
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English (en)
French (fr)
Inventor
嵇凤丽
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Priority to CN202080002236.2A priority Critical patent/CN113015821B/zh
Publication of WO2021047610A1 publication Critical patent/WO2021047610A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Definitions

  • the embodiments of the present disclosure relate to a mask device, a manufacturing method thereof, an evaporation method, and a display device.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • the advantages of wide range, simple production process, high luminous efficiency and flexible display are becoming more and more widely used in display fields such as mobile phones, tablet computers, and digital cameras.
  • separate sub-pixel light-emitting layers are often used to achieve color display.
  • red (R) color sub-pixels use a light-emitting layer capable of emitting red light
  • green (G) color sub-pixels A light-emitting layer capable of emitting green light is used
  • a blue (B) color sub-pixel uses a light-emitting layer capable of emitting blue light.
  • Thin film deposition methods such as evaporation are usually used to prepare OLED display panels, especially small-sized OLED display panels.
  • a fine metal mask (Fine Metal Mask, FMM) is required to evaporate an independent sub-pixel light-emitting layer.
  • the quality of the FMM such as the force uniformity of the FMM and the position accuracy of the grid structure, directly determines the evaporation quality of the light-emitting layer, which in turn affects the display effect. Therefore, improving the quality of the FMM is very important for improving the quality of the display panel.
  • At least one embodiment of the present disclosure provides a mask device including: a mask frame; at least one first mask strip extending in a first direction and at least one second mask strip extending in a second direction , Fixed on the mask frame; and a first mask plate extending along the first direction, fixed on the mask frame; wherein the first direction crosses the second direction, so The at least one first mask strip and the at least one second mask strip cross each other to define at least one mask opening, the first mask plate includes a mask pattern area, and the mask pattern area includes an array arrangement
  • the mask pattern area includes a first area and a second area corresponding to the first area, the second area surrounds the first area, and each of the first areas is
  • the holes are all through holes, each of the holes in the second area is a through hole or a blind hole, and the orthographic projection of the at least one mask opening on the first mask plate at least covers the mask In the first area of the film pattern area, the orthographic projection of the at least one first mask strip and the at least one second mask strip on the first mask
  • the ratio of the depth of the blind hole to the thickness of the first mask is taken The range is [1/4, 3/4].
  • the first mask plate is located on a side of the first mask strip and the second mask strip away from the mask frame.
  • the plurality of holes are uniformly distributed in the mask pattern area.
  • the first area and the second area are continuous and jointly constitute a rectangular mask pattern area.
  • the mask pattern area includes a plurality of first regions arranged along the first direction and a plurality of first regions corresponding to the plurality of first regions one-to-one.
  • the second area, each of the second areas surrounds the corresponding first area, each of the first areas is a rectangle, and each of the second areas is of a back shape.
  • the plurality of holes have the same planar shape and the same planar size.
  • the shape of the plurality of holes includes one of a rectangle, a diamond, a circle, and a hexagon.
  • the plurality of holes are arranged in the first direction to form a plurality of rows of holes, and the first mask strip is on the first mask plate.
  • the orthographic projection covers at least 3 rows of holes in the second area away from the first area.
  • the plurality of holes are arranged in the second direction to form a plurality of rows of holes, and the second mask strip is on the first mask plate.
  • the orthographic projection covers at least 3 rows of holes in the second area away from the first area.
  • the mask device includes a plurality of the first mask plates, and the gap between adjacent first mask plates is in the first mask plate.
  • the orthographic projection on the mask strip is located in the first mask strip.
  • the first mask strip and the second mask strip are provided separately or integrally.
  • the shape of the mask opening includes one of a rectangle, a circle, an ellipse, a sector, and a polygon.
  • the first mask plate further includes an end portion located on both sides of the mask pattern area in the first direction, and the end portion The part includes an edge that is flush with the outer edge of the mask frame.
  • the size of the first area in the second direction is W1
  • the second area is located in the first area in the second direction.
  • the size of the first side of the part in the second direction is W2, and the value range of W2/W1 is [0.1%, 3.2%].
  • the first mask plate further includes a peripheral area surrounding the mask pattern area, and the size of the mask pattern area in the second direction is Is W3, the size of the portion of the peripheral area located on the first side of the mask pattern area in the second direction in the second direction is W4, and the value range of W4/W3 is [0.5% , 3.8%].
  • the size of the first area in the first direction is L1
  • the second area is located in the first area in the first direction.
  • the size of the second side of the part in the first direction is L2, and the value range of L2/L1 is [5%, 7.5%].
  • At least one embodiment of the present disclosure further provides a method for manufacturing a mask device.
  • the manufacturing method includes: fixing at least one first mask strip and at least one second mask strip on a mask frame, wherein the at least One first mask strip extends in a first direction, the at least one second mask strip extends in a second direction, and the first direction crosses the second direction, and the at least one first mask strip and The at least one second mask strip crosses each other to define at least one mask opening; and the first mask plate is fixed on the mask frame, wherein the first mask plate extends along the first direction
  • the first mask plate includes a mask pattern area, the mask pattern area includes a plurality of holes arranged in an array, and the mask pattern area includes a first area and a second area corresponding to the first area.
  • each of the holes in the first area is a through hole
  • each of the holes in the second area is a through hole or a blind hole
  • the orthographic projection of the at least one mask opening on the first mask plate at least covers the first area in the mask pattern area, the at least one first mask strip and the at least one first mask
  • the orthographic projection of the two mask strips on the first mask plate at least partially covers the second area in the mask pattern area.
  • fixing the first mask plate on the mask frame includes: fixing the first mask plate on the first mask strip And a side of the second mask strip away from the mask frame.
  • the fixing method of the first mask strip and the second mask strip or the fixing method of the first mask plate includes welding.
  • At least one embodiment of the present disclosure further provides an evaporation method.
  • the evaporation method includes: using the mask device provided in any embodiment of the present disclosure as a mask to evaporate an object to be evaporated.
  • the opening of the blind hole faces the evaporation source.
  • the object to be evaporated includes an area to be evaporated, and the orthographic projection of the first area on the object to be evaporated covers the area to be evaporated.
  • the size of the area to be evaporated in the second direction is W0, and the size of the first area in the second direction is W1,
  • the value range of W0/W1 is [99.8%, 99.9%]
  • the size of the area to be vaporized in the first direction is L0
  • the size of the first area in the first direction is L1
  • the value range of L0/L1 is [99.9%, 99.95%].
  • vaporizing the object to be vaporized includes: forming at least one functional layer of a light-emitting element on the object to be vaporized by vapor deposition.
  • the pattern of the at least one functional layer is substantially the same as the pattern of the through hole in the first region.
  • At least one embodiment of the present disclosure further provides a display device, which includes: a light-emitting element formed by the vapor deposition method provided in any embodiment of the present disclosure.
  • Figure 1 is a schematic top view of a mask device
  • FIG. 2 is a partial enlarged schematic diagram of a fine metal mask in the mask device shown in FIG. 1;
  • FIG. 3 is a schematic top view of a mask device provided by at least one embodiment of the present disclosure.
  • FIG. 4A is a schematic top view of the mask frame in the mask device shown in FIG. 3;
  • FIG. 4B is a schematic top view of the first mask strip and the second mask strip in the mask device shown in FIG. 3;
  • 4C is an enlarged schematic diagram of the first mask plate in the mask device shown in FIG. 3;
  • 4D is a schematic diagram of the size of each area on the first mask plate shown in FIG. 4C;
  • FIG. 5 is a schematic structural diagram of another mask device provided by at least one embodiment of the present disclosure.
  • FIG. 6A is a schematic top view of a second mask plate in the mask device shown in FIG. 5;
  • 6B is a schematic top view of the mask frame in the mask device shown in FIG. 5;
  • FIG. 7 is a schematic diagram of an evaporation method provided by at least one embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of a comparison of sizes of a first area and a to-be-evaporated area provided by at least one embodiment of the present disclosure.
  • FIG. 1 is a schematic top view of a mask device.
  • the mask device 1 includes a frame such as a metal frame 10, and also includes a cover 20, a support bar (Howling) 30, and a long strip of fine metal mask provided on the metal frame 10.
  • Membrane (FMM) 40 The metal frame 10 has an opening area, a plurality of fine metal masks 40 are arranged side by side with each other to substantially cover the opening area surrounded by the metal frame 10, and each fine metal mask 40 is provided with a plurality of mask pattern areas 40a,
  • the mask pattern area 40a corresponds to the mask opening 25 (as shown by the dashed frame 25 in FIG. 1) defined by the shielding bar 20 and the supporting bar 30 crossing each other.
  • FIG. 1 is a schematic top view of a mask device.
  • the mask device 1 includes a frame such as a metal frame 10, and also includes a cover 20, a support bar (Howling) 30, and a long strip of fine metal mask provided on the metal frame 10.
  • the orthographic projection of the mask pattern area 40a in the plane of the corresponding mask opening 25 is located in the corresponding opening (or, the mask pattern area 40a is in the plane of the metal frame 10).
  • the orthographic projection is in the orthographic projection of the corresponding mask opening 25 in the plane).
  • FIG. 2 is a partial enlarged schematic diagram of the fine metal mask 40 in the mask device shown in FIG. 1.
  • the fine metal mask 40 includes a mask pattern area 40a and a peripheral area 40b.
  • the mask pattern area 40a is filled with through holes 40v arranged in an array (for example, the through holes 40v are formed by etching, for example, corresponding to one or more sub-pixels of the prepared display panel), while there is no through hole 40b in the peripheral area 40b Through hole 40v.
  • the peripheral area 40 b includes a first peripheral area 40 b 1 corresponding to the shielding bar 20 and a second peripheral area 40 b 2 corresponding to the supporting bar 30.
  • the vapor deposition material can pass through the mask pattern area 40a.
  • the hole 40v is deposited in the vapor-deposition area of the object to be vapor-deposited (for example, in the sub-pixels of the display panel); the shielding strip 20 is located between the adjacent fine metal mask plates 40 and is connected to the first fine metal mask plate 40.
  • a peripheral area 40b1 overlaps, and the shielding strip 20 is used to shield the evaporation material to prevent the evaporation material from being deposited on the object to be evaporated through the gap between the adjacent fine metal masks 40; the support strip 30 Located between the adjacent mask pattern areas 40a of the fine metal mask 40 and overlaps the second peripheral area 40b2 of the fine metal mask 40, the support bar 30 is used to support the fine metal mask 40 to The sagging amount of the fine metal mask 40 is reduced, thereby improving the deposition accuracy.
  • the manufacturing process of the mask device 1 shown in FIG. 1 usually includes: preparing the metal frame 10, the shielding bar 20 and the supporting bar 30, etc. through, for example, a wire cutting process, and preparing a fine metal mask 40 through a wire cutting process and an etching process. Then the shielding strip 20 and the supporting strip 30 are welded to the metal frame 10 in sequence, and then the fine metal mask 40 is tensioned and welded to the metal frame 10. Since the fine metal mask 40 is arranged on the side of the shielding strip 20 and the support strip 30 away from the metal frame 10, in order to avoid the shielding strip 20 and the support strip 30 when the fine metal mask 40 is welded to the metal frame 10 The thickness of the fine metal mask 40 is affected by the bending of the fine metal mask 40.
  • a welding groove (not shown in FIG. 1) for accommodating the shielding bar 20 and the supporting bar 30 is usually formed on the metal frame 10.
  • the aforementioned welding groove may be located at the overlapping position of the shielding bar 20 and the supporting bar 30 and the metal frame 10 in FIG. 1.
  • the step of tensioning and welding the fine metal mask plate 40 on the metal frame 10 is called netting.
  • the netting is actually a process of unfolding and tightening the fine metal mask plate 40.
  • the center area and the edge area of the mask pattern area 40a have different surrounding topography.
  • the periphery of the central area of the mask pattern area 40a still belongs to the mask pattern area 40a where the through holes are formed; and the edge area of the mask pattern area 40a already belongs to the mask pattern area 40a where the through holes are formed.
  • the edge area of the mask pattern area 40a has the problem of uneven force, which easily leads to the masking.
  • the edge area of the film pattern area 40a is deformed and wrinkled due to uneven force during the process of web opening. Therefore, after the light-emitting unit is vapor-deposited on the display panel using the mask device shown in FIG. 1, when the display panel is lighted, there may be abnormal colors around the active area (AA) of the display panel.
  • the mask pattern area as a whole is called the "effective mask area”.
  • the entire mask pattern area 40a in FIG. 1 is an effective mask area; if a part of the mask pattern area is The orthographic projection in the plane where the corresponding mask opening is located is in the corresponding mask opening (including the case where the orthographic projection and the corresponding mask opening completely overlap), and the rest of the mask pattern area is in the corresponding mask opening.
  • the orthographic projection in the plane where the opening is located does not overlap the corresponding opening, then this part of the mask pattern area is called the "effective mask area", and correspondingly, the rest of the mask pattern area is called It is a "dummy area”.
  • the orthographic projection of the effective mask area on the display panel at least covers the effective display area of the display panel; in some embodiments of the present disclosure, if The orthographic projection of the effective mask area on the display panel overlaps the effective display area, the effective mask area as a whole is called “absolutely effective mask area”; in some embodiments of the present disclosure, if the effective mask area is A part of the orthographic projection on the display panel overlaps the effective display area, then this part of the effective mask area is called the “absolutely effective mask area", and the rest of the effective mask area is called the "relatively effective mask” Area".
  • At least one embodiment of the present disclosure provides a mask device including: a mask frame; at least one first mask strip extending in a first direction and at least one second mask strip extending in a second direction , Fixed on the mask frame; and a first mask plate extending along the first direction, fixed on the mask frame; wherein, the first direction and the second direction cross, the at least one first mask strip and the The at least one second mask strip crosses each other to define at least one mask opening;
  • the first mask includes a mask pattern area, the mask pattern area includes a plurality of holes arranged in an array;
  • the mask pattern area includes a first An area and a second area corresponding to the first area, the second area surrounds the first area, each hole in the first area is a through hole, and each hole in the second area is a through hole or a blind hole;
  • the orthographic projection of the at least one mask opening on the first mask plate covers the first area in the mask pattern area, and the at least one first mask strip and the at least one second mask strip are on the first mask
  • Some embodiments of the present disclosure also provide a manufacturing method, an evaporation method, and a display device corresponding to the above-mentioned mask device.
  • each through hole in the first area has substantially the same surrounding morphology, and at least the part near the center of the first area can be defined as an absolute effective mask area, thereby avoiding During the process of opening the screen, the absolute effective mask area deforms due to uneven forces and produces wrinkles, which can improve product color mixing and increase product yield; at the same time, the holes provided in the second area lighten the first mask.
  • the quality of the plate can reduce the sagging amount of the first mask plate during the process of opening the screen, thereby improving the deposition accuracy.
  • FIG. 3 is a schematic top view of a mask device provided by at least one embodiment of the present disclosure.
  • the mask device 2 includes a mask frame 110, at least one first mask strip 120, at least one second mask strip 130, and a first mask plate 140.
  • the mask frame 110 may be a rectangular frame; of course, in other embodiments, the mask frame 110 may be any other suitable shape. This is not limited.
  • the material of the mask frame 110 may include a metal material with high thermal stability and a small coefficient of thermal expansion, such as Invar alloy, stainless steel, etc., which is not limited in the embodiments of the present disclosure.
  • FIG. 4A is a schematic top view of the mask frame 110 in the mask device shown in FIG. 3.
  • the mask frame 110 includes a main surface 1101, a plurality of grooves 1102 and 1103 on the main surface 1101 (not shown in FIG. 3).
  • the main surface 1101 of the mask frame 110 except for the grooves 1102 and 1103 is located in the same plane.
  • FIG. 4A shows that as shown in FIG. 4A, the mask frame 110 includes a main surface 1101, a plurality of grooves 1102 and 1103 on the main surface 1101 (not shown in FIG. 3).
  • the main surface 1101 of the mask frame 110 except for the grooves 1102 and 1103 is located in the same plane.
  • the groove 1102 is located on the edge of the mask frame 110 that crosses the first direction D1 to accommodate and fix the first mask strip 120 extending along the first direction D1; the groove 1103 It is located on the side of the mask frame 110 that crosses the second direction D2 and is used to accommodate and fix the second mask strip 130 extending along the second direction D2.
  • the first mask strip 120 is located below the second mask strip 130.
  • the depth of the groove 1102 is substantially equal to or slightly Greater than the sum of the thickness of the first mask strip 120 and the second mask strip 130
  • the depth of the groove 1103 is substantially equal to or slightly larger than the thickness of the second mask strip 130, so that the second mask strip 130 can be far away from the mask.
  • the surface of the film frame 110 and the main surface 1101 of the mask frame 110 are substantially on the same plane. For example, in the actual manufacturing process, the size of the first mask strip 120 and the size of the groove 1102 both have a certain accuracy error.
  • the width of each groove 1102 may be slightly larger than the width of the corresponding first mask strip 120; in the same way, when perpendicular to the second mask strip 120 In the extending direction of the strip 130, the width of each groove 1103 may be slightly larger than the width of the corresponding second mask strip 130.
  • the positions between the adjacent grooves of the mask frame 110 (for example, the positions between the adjacent grooves 1103) can be clamped.
  • the embodiment of the present disclosure does not limit the fixing method of the mask device (including the mask device 2 shown in FIG. 3 and the mask device 3 shown in FIG. 5 which will be introduced later) during the evaporation process. .
  • the first mask strip 120 and the second mask strip 130 are both fixed on the mask frame 110, wherein the first mask strip 120 extends along the first direction D1, and the second mask strip 130 extends along the second direction D2 and crosses the first mask strip 120.
  • the first mask strip 120 and the second mask strip 130 may be fixed (for example, welded) on the mask frame 110 through the aforementioned grooves 1102 and 1103, respectively.
  • the material of the first mask strip 120 and the second mask strip 130 may include metal materials with high thermal stability and low coefficient of thermal expansion, such as Invar alloy, stainless steel, etc., which are not limited in the embodiments of the present disclosure.
  • FIGS. 3 and 4B is a schematic top view of the first mask strip 120 and the second mask strip 130 in the mask device shown in FIG. 3.
  • the first mask strip 120 and the second mask strip 130 are arranged separately, for example, the first mask strip 120 is located below the second mask strip 130, That is, the second mask strip 130 is located on the side of the first mask strip 120 away from the mask frame 110, that is, the first mask strip 120 is fixed on the mask frame 110 first, and then the second mask strip 130 It is fixed on the mask frame 110.
  • the first direction D1 and the second direction D2 intersect, so that the first mask strip 120 and the second mask strip 130 cross each other to define at least one mask opening 125 (as shown in FIG. 3 And shown in dashed box 125 in FIG. 4B).
  • the first direction D1 and the second direction D2 may be perpendicular to each other.
  • FIGS. 3 and 4B as shown in FIGS.
  • the mask opening 125 is both defined by the first mask strip 120 and the second mask strip 130; for example, in other embodiments, at least part of The mask opening 125 (for example, a mask opening adjacent to the mask frame 110, not shown in FIGS. 3 and 4B) may also be composed of the first mask strip 120, the second mask strip 130, and the mask frame 110. Commonly defined.
  • the shape of the mask opening 125 may be a rectangle (belonging to a regular polygon); for example, in other embodiments, the shape of the mask opening 125 may be a rectangle. , Circle, ellipse, sector and polygon (including regular polygon and irregular polygon).
  • the embodiment of the present disclosure does not limit the shape of the mask opening. It should be noted that, since the specific shape of the mask opening 125 is related to the shape of the first mask strip 120 and the second mask strip 130, the embodiment of the present disclosure compares the first mask strip 120 and the second mask strip The specific shape of the bar 130 is also not limited. In addition, it should be noted that the embodiment of the present disclosure does not limit the size and number of the mask opening 125 either.
  • the first mask plate 140 is fixed on the mask frame 110.
  • the first mask plate 140 is located on the side of the first mask strip 120 and the second mask strip 130 away from the mask frame 110.
  • the first mask plate 140 is also welded on the mask frame 110.
  • the material of the first mask 140 may include a metal material with high thermal stability and a small coefficient of thermal expansion, such as Invar alloy, stainless steel, etc., which is not limited in the embodiments of the present disclosure.
  • the first mask 140 extends along the first direction D1.
  • the surface of the second mask strip 130 close to the first mask plate 140 and the surface of the mask frame 110 close to the first mask plate 140 (that is, the main surface 1101 of the mask frame 110) It is substantially on the same plane, so that the second mask strip 130 can support the first mask 140 to reduce the sagging amount of the first mask 140, thereby improving the deposition accuracy.
  • the first mask plate 140 includes a mask pattern area 140a and a peripheral area 140b surrounding the mask pattern area 140a.
  • FIG. 4C is an enlarged schematic diagram of the first mask plate 140 in the mask device 2 shown in FIG. 3.
  • the mask pattern area is generally artificially defined.
  • the mask pattern area is generally defined as having a shape similar to the pattern formed by the sequential connection of the outermost through holes (for example, the central connection of the through holes) among the plurality of through holes on the first mask plate; for example, ,
  • the mask pattern area is a pattern that just includes the smallest area of the plurality of through holes. It should be noted that the embodiment of the present disclosure does not specifically limit the shape and size of the mask pattern area.
  • the mask pattern area 140a includes a plurality of holes 140v arranged in an array, but there is no hole 140v in the peripheral area 140b.
  • the mask pattern area 140a is a rectangular area with a minimum area including a plurality of holes 140v, that is, the plurality of holes 140v are all over the mask pattern area 140a.
  • the plurality of holes 140v are uniformly distributed in the mask pattern area 140a; for example, the plurality of holes 140v are periodically distributed in the mask pattern area 140a.
  • the plurality of holes 140v have the same planar shape and the same planar size.
  • the shape of the plurality of holes 140v includes, but is not limited to, a rectangle, a diamond, a circle, a hexagon, and the like. It should be noted that the embodiment of the present disclosure does not specifically limit the shape and size of the hole 140v. It should also be noted that the embodiment of the present disclosure does not limit the specific shape of the mask pattern area 140a.
  • the mask pattern area 140a includes a first area 140a1 (as shown by a solid rectangular frame 140a1 in FIG. 4C) and a second area 140a2 corresponding to the first area 140a1. (As shown in the area 140a2 between the dashed rectangular frame and the solid rectangular frame 140a1 in FIG. 4C).
  • the second area 140a2 surrounds the first area 140a1.
  • each hole 140V in the first region 140a1 is a through hole 140v1 (as shown by the white hollow ellipse in FIG. 4C).
  • each hole 140v in the second region 140a2 is a through hole 140v1 (as shown by a white hollow ellipse in FIG. 4C) or a blind hole 140v2 (as shown by a black solid ellipse in FIG. 4C) .
  • FIG. 4C each hole 140V in the first region 140a1 is a through hole 140v1 (as shown by the white hollow ellipse in FIG. 4C).
  • each hole 140v in the second region 140a2 is a through hole 140v1 (as shown by a white hollow ellipse in FIG. 4C) or a blind hole 140v2 (as shown by a black solid ellipse in FIG. 4C) .
  • FIG. 4C each hole 140V in the first region 140a1 is a through hole 140v1 (as shown by
  • a part of the holes 140v in the second region 140a2 are all through holes 140v1, and the other part of the holes 140v in the second region 140a2 are all blind holes 140v2; for example, the second region 140a2
  • the through holes 140v1 and the blind holes 140v2 can be arranged in any manner (for example, in a regular or irregular manner).
  • FIG. 4C shows an irregular arrangement, but it should not be regarded as a contradiction to the present disclosure.
  • all the holes 140v in the second region 140a2 are through holes 140v1.
  • all the holes 140v in the second region 140a2 are blind holes 140v2. It should be noted that the respective number and arrangement of the through holes 140v1 and the blind holes 140v2 in the second region can be set according to actual needs, which is not limited in the embodiment of the present disclosure.
  • the ratio of the depth of the blind hole 140v2 to the thickness of the first mask 140 ranges from [1/4, 3/4 ]. It should be noted that in the embodiments of the present disclosure, the thickness of the first mask 140 refers to the thickness of the unopened portion of the first mask 140 or the opening of the first mask 140 where the opening is open. The thickness in front of the hole.
  • the orthographic projection 125P of the mask opening 125 on the first mask plate 140 (as shown in the rectangular area 125P with a white background surrounded by the shaded portion in FIG. 4) at least covers the mask pattern
  • the first area 140a1 in the area 140a, the orthographic projection of the first mask strip 120 and the second mask strip 130 on the first mask plate 140 (as shown by the shaded part in FIG. 4) at least partially cover the mask pattern area
  • the orthographic projection of the first mask strip 120 on the first mask plate 140 extends along the first direction D1 and at least partially covers the second area 140a2; the second mask strip 130 is on the first mask plate 140
  • the orthographic projection of is extended in the second direction and at least partially covers the second area 140a2.
  • the orthographic projection 125P of the mask opening 125 on the first mask plate 140 not only covers the first area 140a1, but also covers a part of the second area 140a2 (as shown in FIG. 4).
  • the rectangular area with a white background 125P is shown in the circle-shaped area surrounding the solid rectangular frame 140a1, that is, as shown in the circle-shaped area that does not overlap the solid rectangular frame 140a1 in the rectangular area 125P with a white background in FIG. 4),
  • the orthographic projection of the first mask strip 120 and the second mask strip 130 on the first mask plate 140 covers the remaining part of the second area 140a2 (as shown in the dotted rectangle in FIG.
  • the area 125P is shown in the back-shaped area, that is, as shown in the back-shaped area where the dashed rectangular frame and the shaded part overlap in FIG.
  • the mask opening 125 is in the first mask
  • the orthographic projection 125P on the plate 140 overlaps the first area 140a1.
  • the orthographic projection of the first mask strip 120 and the second mask strip 130 on the first mask plate 140 completely covers the second area 140a2; It should be noted that the embodiments of the present disclosure do not limit this.
  • the area defined by the mask opening 125 in the mask pattern area 140a (that is, the area covered by the orthographic projection 125P of the mask opening 125 on the first mask plate 140) is an effective mask.
  • the membrane area As shown in FIG. 4C, the first area 140a1 is located in the effective mask area, and the area of the first area 140a1 is equal to or slightly smaller than the area of the effective mask area; for example, the effective mask area is far away from the first mask plate 140.
  • the edge of the mask pattern area 140 a that is, the center of the mask pattern area 140 a close to the first mask plate 140.
  • the through hole 140v1 in the effective mask area may allow the vapor deposition material to be deposited on the object to be vaporized
  • the blind hole 140v2 in the effective mask area can prevent the evaporation material from being deposited on the object to be evaporated at its location; for example, in some embodiments, the mask device 2 is used to prevent the object to be evaporated (for example , The substrate of the display panel under preparation) during evaporation, the orthographic projection of the first area 140a1 on the object to be evaporated covers the area to be evaporated of the object to be evaporated (for example, the effective display area of the display panel under preparation) Therefore, the evaporation material can be deposited on the evaporation area of the object to be evaporated (for example, deposited in the sub-pixels of the effective display area) through the through hole 140v1 in the first area 140a1.
  • the orthographic projection of the first mask strip 120 and the second mask strip 130 on the first mask plate 140 covers the mask pattern area 140a of the first mask plate 140.
  • the area other than the effective mask area (that is, the area outside the white rectangular area 125P of the mask pattern area 140a in FIG. 4C) is called a dummy area.
  • the dummy area is located in the second area 140a2, and the area of the dummy area is equal to or slightly smaller than the area of the second area 140a2.
  • the mask device 2 when the mask device 2 is used to vaporize an object to be vaporized (for example, a substrate of a display panel under preparation), the hole 140v in the dummy area is blocked by the first mask strip 120 and the second mask strip 130 Therefore, the evaporation material cannot be deposited on the object to be evaporated through the hole 140v in the dummy area (specifically, the evaporation material cannot be deposited on the object to be evaporated through the through hole 140v1 in the dummy area).
  • the first area 140a1 and the second area 140a2 are continuous and jointly constitute a rectangular mask pattern area 140a.
  • the mask pattern area 140a can be divided into a first area 140a1 and a second area 140a2 according to the types of holes allowed in each area, or according to whether each area is covered by a mask.
  • the opening 125 exposes and divides the mask pattern area 140a into an effective mask area and a dummy area. That is to say, for the mask pattern area 140a, there may be many different ways of dividing, which are not limited in the embodiment of the present disclosure.
  • the mask pattern area 140a may include a plurality of first regions 140a1 arranged along a first direction and a plurality of second regions 140a1 corresponding to the plurality of first regions 140a1 one-to-one.
  • Area 140a2 each second area 140a2 surrounds the corresponding first area 140a1.
  • the above-mentioned first area 140a1 is rectangular, and the above-mentioned second area 140a2 is in a reciprocal shape.
  • the peripheral area 140b of the first mask 140 may also include an original end 140c (as shown by a dashed frame 140c in FIG. 3).
  • the original end portion 140c includes an end portion 140c1 and a clamping portion 140c2 (shown in two parts divided by a dotted line frame 140c in FIG. 3).
  • the original end portion 140c (that is, the end portion 140c1 and the clamping portion 140c2) is located on both sides of the mask pattern area 140a in the first direction D1.
  • the end 140c1 includes an edge flush with the outer edge of the mask frame 110 (as shown by the dashed line dividing the dashed frame 140c into 140c1 and 140c2 in FIG. 3), and the clamping portion 140c2 is on the plane where the mask frame 110 is located.
  • the orthographic projection on is located outside the mask frame 110.
  • the screen stretching machine performs a screen stretching operation on the first mask plate 140 by clamping the clamping portion 140c2.
  • the original end 140c of the first mask 140 can be cut, for example, along the outer edge of the mask frame 110 (as shown in FIG.
  • the dashed frame 140c is divided Cut for 140c1 and 140c2 as shown by the dashed lines) to remove the clamping portion 140c2, leaving the end 140c1, so that the end 140c1 has an edge flush with the outer edge of the mask frame 110 (the dashed frame in Figure 3 140c is divided into 140c1 and 140c2 as shown by the dotted line).
  • the first mask plate 140 is fixed (for example, welded) on the mask frame 110 through the end 140c1.
  • the effective mask area can allow the evaporation material to be deposited on the object to be evaporated, and the blind hole 140v2 in the effective mask area can prevent the evaporation material from being deposited on the object to be evaporated at its location.
  • the blind holes 140v2 in the second region 140a2 of the mask pattern area 140a can be used to accommodate the evaporation material emitted by the evaporation source during the evaporation process.
  • the opening of the blind hole 140v2 in the second region 140a2 faces the plane where the first mask strip 120 is located and also faces the plane where the second mask strip 130 is located. The present disclosure includes but is not limited to this.
  • the orthographic projection of the first region 140a1 on the object to be vaporized covers the object to be vaporized.
  • the vapor deposition area of the vapor deposition object for example, the substrate of the effective display area of the display panel under preparation
  • the vapor deposition material can be deposited on the vapor deposition object to be vaporized through the through hole 140v1 in the first region 140a1.
  • the plating area for example, deposited in the sub-pixels of the effective display area.
  • the size of the first area 140a1 is equal to or slightly larger than the size of the area to be vaporized.
  • the first mask strip 120 may block the edge portion of the dummy area parallel to the first direction D1 (that is, the area other than the effective mask area in the mask pattern area 140a).
  • the hole 140v in the middle to prevent the evaporation material from passing through the through hole 140v1 in the edge portion of the dummy area parallel to the first direction D1 to be deposited on the object to be evaporated; for example, as shown in conjunction with FIG. 3 and FIG.
  • the orthographic projection of the gap between adjacent first mask plates 140 on the first mask strip 120 is located in the first mask strip 120, so that The first mask strip 120 can also block the gaps between the adjacent first mask plates 140 to prevent the vapor deposition material from passing through the gaps between the adjacent first mask plates 140 to be deposited on the object to be vaporized. (Refer to the role of the shielding bar 20 in the mask device 1 shown in FIG. 1).
  • the second mask strip 130 can block the holes 140v in the dummy area parallel to the second direction D2 and located between the adjacent effective mask areas to prevent the evaporation material from penetrating.
  • the through hole 140v1 in the portion of the dummy region parallel to the second direction D2 and located between the adjacent effective mask regions is deposited on the object to be evaporated.
  • the second mask strip 130 can also block the hole 140v in the edge portion of the dummy area parallel to the second direction D2, so as to prevent the evaporation material from penetrating parallel to the second direction D2.
  • the through-hole 140v1 in the edge portion of the dummy area is deposited on the object to be evaporated.
  • the second mask strip 130 can also be used to support the first mask plate 140 to reduce the amount of sagging of the first mask plate 140 (refer to the role of the support strip 30 in the mask device 1 shown in FIG. ), thereby improving the deposition accuracy.
  • first mask strip 120 the number of the first mask strip 120, the second mask strip 130, and the first mask plate 140 included in the mask device 2 shown in FIG. This is not limited.
  • FIG. 5 is a schematic structural diagram of another mask device provided by at least one embodiment of the present disclosure.
  • the first mask strip and the second mask strip may be integrated to form a mesh structure, and the embodiments of the present disclosure include but are not limited to this.
  • FIGS. 6A and 6B the differences between the mask device 3 shown in FIG. 5 and the mask device 2 shown in FIG. 3 will be described in detail with reference to FIGS. 6A and 6B. It should be noted that other structures of the mask device 3 shown in FIG. 5 are basically the same as those of the mask device 2 shown in FIG. 3, and the repetitions are not repeated here.
  • the mask device 3 includes a mask frame 110', a second mask plate 150, and a first mask plate 140.
  • the first mask 140 in the mask device 3 shown in FIG. 5 may refer to the first mask 140 in the mask device 2 shown in FIG. 3, and may also refer to the first mask 140 shown in FIG. 4C.
  • the diaphragm 140 will not be repeated here for repetition.
  • FIG. 6A is a schematic top view of the second mask plate 150 in the mask device shown in FIG. 5.
  • the second mask plate 150 includes at least one mask opening 125 (corresponding to the mask opening 125 in FIG. 3).
  • the extension strips on the second mask 150 extending along the first direction D1 can be regarded as the first mask strip 120, and the edges on the second mask 150
  • the extension strip extending in the second direction D2 (as shown by the dashed frame 130 ′ in FIG. 6A) can be regarded as the second mask strip 130.
  • the material of the second mask 140 may include a metal material with high thermal stability and a small coefficient of thermal expansion, such as Invar alloy, stainless steel, etc., which is not limited in the embodiments of the present disclosure.
  • the second mask 150 can be used to block the holes 140v in the dummy area of the first mask 140 and the gaps between adjacent first masks 140, and can also be used to support the first mask 140.
  • the second mask plate 150 may be disposed on the mask frame 110', and the first mask plate 140 is disposed on the side of the second mask plate 150 away from the mask frame 110'.
  • the orthographic projection of the second mask plate 150 in FIG. 6A on the plane of the mask frame 110' is the same as that of the first mask strip 120 and the second mask strip 130 in FIG. 3 on the plane of the mask frame 110.
  • the orthographic projection is basically the same, and the embodiments of the present disclosure include but are not limited to this.
  • FIG. 6B is a schematic top view of the mask frame 110' in the mask device shown in FIG. 5.
  • the mask frame 110' includes a main surface 1101' and a plurality of grooves 1102' and 1103' (not shown in FIG. 5) on the main surface 1101'.
  • the main surface 1101' of the mask frame 110' except for the grooves 1102' and 1103' is located in the same plane.
  • the groove 1102' is located on the edge of the mask frame 110' that crosses the first direction D1 to accommodate and fix the extension of the second mask 150 along the first direction D1. (As shown by the dashed frame 120' in FIG.
  • the groove 1103' is located on the edge of the mask frame 110' that crosses the second direction D2 for receiving and fixing the second mask 150 along the first An extension bar extending in two directions D2 (as shown by the dashed frame 130' in FIG. 6A).
  • the mask frame 110' shown in FIG. 6A is located on the edge of the mask frame 110' that crosses the second direction D2 for receiving and fixing the second mask 150 along the first An extension bar extending in two directions D2 (as shown by the dashed frame 130' in FIG. 6A).
  • the groove 1102' and the concave in the direction perpendicular to the main surface 1101' of the mask frame 110', the groove 1102' and the concave
  • the depths of the grooves 1103' are substantially the same, and the depths of the grooves 1102' and the grooves 1103' are substantially equal to or slightly greater than the thickness of the second mask 150, so that the second mask 150 can be far away from the mask frame 110'
  • the surface of and the main surface 1101' of the mask frame 110' are substantially on the same plane. For example, for other details of the mask frame 110' shown in FIG. 6B, reference may be made to the related description of the mask frame 110 shown in FIG. 4A, and the repetitions are not repeated here.
  • the shape of the second mask 150 shown in FIG. 5 is exemplary, and the embodiment of the present disclosure does not limit the specific shape of the second mask 150, as long as the second mask 150 includes The mask opening 125 is suitable, and the mask pattern area 140a of the first mask plate 140 can be appropriately shielded (that is, the dummy area in the mask pattern area 140a is blocked).
  • the embodiment of the present disclosure does not limit whether the second mask plate 150 is fixed on the mask frame 110' through a groove.
  • the second mask plate 150 can also be directly fixed on the main surface of the mask frame 110'. on.
  • the first mask strip and the second mask strip can be fixed to the mask in a suitable manner according to the specific situation.
  • the suitable way is not limited to the various ways in the above-mentioned embodiment.
  • the mask pattern area 140a of the first mask plate 140 is shielded by the first mask strip 120 and the second mask strip 130, and the mask pattern area 140a is close to the center.
  • Part (including the first area 140a1) is defined as an effective mask area; each through hole 140v1 in the first area 140a1 has basically the same surrounding morphology (each through hole 140v1 is surrounded by the area where the hole 140v is formed, and the stress is different (Smaller), at least the part close to the center of the first area 140a1 can be defined as an absolute effective mask area, so as to avoid the problem of deformation and wrinkles in the absolutely effective mask area due to uneven forces during the web opening process.
  • the mask device provided by the embodiment of the present disclosure can reduce the quality of the first mask plate 140 by providing holes 140v (through holes 140v1 and/or blind holes 140v2) in the second region 140a2, so that the quality of the first mask plate 140 can be reduced.
  • the sagging amount of the first mask 140 is reduced, thereby improving the deposition accuracy.
  • FIG. 4D is a schematic diagram of the size of each area on the first mask plate shown in FIG. 4C. It should be noted that, for clarity and conciseness, the hole 140v on the first mask plate 140 is omitted in FIG. 4D.
  • the size of the first area 140a1 in the second direction D2 is W1, and the second area 140a2 is located on the first side S1 of the first area 140a1 in the second direction D2 (
  • the size of the portion of the first side S1 shown by the black arrow S1 in FIG. 4D in the second direction D2 is W2, and the value range of W2/W1 may be [0.1%, 3.2%].
  • the present disclosure includes but does not Limited to this.
  • the size W1 of the first area 140a1 in the second direction D2 may be 65mm, and the second area 140a2 is located on the first side S1 of the first area 140a1 in the second direction D2.
  • the dimension W2 in the direction D2 may be 2mm.
  • the size W2 of the portion of the first side S1 in the direction D2 in the second direction D2 may be 0.15mm.
  • the size of the first mask 140 in the second direction D2 is generally slightly larger than the size W3 of the mask pattern area 140a in the second direction; for example, the first mask 140
  • the size in the second direction D2 may be 70 mm, and the embodiments of the present disclosure include but are not limited to this.
  • the size of the mask pattern area 140a in the second direction is W3, and the peripheral area 140b is located on the first side S1 of the mask pattern area 140a in the second direction D2 (
  • the size of the part of the first side S1 shown by the black arrow S1 in FIG. 4D in the second direction D2 is W4, and the value range of W4/W3 may be [0.5%, 3.8%].
  • the present disclosure includes but not Limited to this.
  • the size of the first mask 140 in the second direction D2 ie W3+2*W4 may be 70mm
  • the size W3 of the mask pattern area 140a in the second direction may be 69mm.
  • the peripheral area 140b located on the first side S1 of the mask pattern area 140a in the second direction D2 may have a dimension W4 of 0.5 mm in the second direction D2.
  • W4/W3 is approximately 0.7%, which lies within the value range of W4/W3; for example, in some other specific examples, the size of the first mask 140 in the second direction D2 (ie W3+2*W4) can be 70mm.
  • the size W3 of the film pattern area 140a in the second direction may be 65.3 mm, and the size W4 of the peripheral area 140b located on the first side S1 of the mask pattern area 140a in the second direction D2 in the second direction D2 may be 2.35mm, in this case, the value of W4/W3 is about 3.6%, which is also within the value range of W4/W3 above.
  • the size of the first area 140a1 in the first direction D1 is L1
  • the second area 140a2 is located on the second side S2 of the first area 140a1 in the first direction D1
  • the size of the portion of the second side S2 shown by the black arrow S2 in FIG. 4D in the first direction D1 is L2
  • the value range of L2/L1 may be [5%, 7.5%].
  • This disclosure includes but does not Limited to this.
  • the distance between adjacent first regions 140a1 is L3, and L3 is approximately twice L2.
  • the value range of L3/L1 may be [10%, 15%], and the present disclosure includes but is not limited to this.
  • the plurality of holes 140v in the mask pattern area 140a are arranged in the first direction D1 to form a plurality of rows of holes, and the plurality of holes in the mask pattern area 140a are arranged in the second direction D1.
  • a plurality of rows of holes are arranged in the direction D2.
  • the area between the edge of the dummy area parallel to the first direction D1 and the effective mask area includes at least 3 rows of holes, that is, the first mask strip 120 is formed on the first mask plate 140.
  • the orthographic projection covers at least 3 rows of holes in the second area 140a2 away from the first area 140a1.
  • the orthographic projection of the first mask strip 120 on the first mask 140 may cover 3, 4, 5 or more rows of holes in the second region 140a2 away from the first region 140a1.
  • the embodiment does not limit this.
  • the area between the edge of the dummy area parallel to the second direction D2 and the effective mask area and the area between the adjacent effective mask areas of the dummy area each include at least 3 rows of holes, That is, the orthographic projection of the second mask strip 130 on the first mask plate 140 covers at least 3 rows of holes in the second region 140a2 far from the first region 140a1.
  • the orthographic projection of the second mask strip 130 on the first mask plate 140 may cover 3, 4, 5 or more rows of holes in the second region 140a2 away from the first region 140a1.
  • the effective mask area is symmetrically distributed in the mask pattern area 140a; for example, in some embodiments, the center of the effective mask area is the same as the center of the mask pattern area 140a.
  • the line is parallel to the first direction D1, or the center of the effective mask area coincides with the center of the mask pattern area 140a.
  • the center of the effective mask area may coincide with the center of the first region 140a1.
  • row and column are not used to limit the direction, form, etc., but only for the convenience of describing a group of through holes arranged in the first direction or the second direction.
  • the center line of the group of through holes is substantially parallel to the first direction or the second direction, but the center line of the group of through holes is not required to be strictly parallel to the first direction or the second direction, and the group of through holes is not required
  • the center line of must be a straight line.
  • At least one embodiment of the present disclosure also provides a manufacturing method of the mask device.
  • This manufacturing method can be used to manufacture the masking device provided by the above-mentioned embodiments of the present disclosure (for example, the masking device 2 shown in FIG. 3 and the masking device 3 shown in FIG. 5).
  • the manufacturing method of the mask device provided by the embodiment of the present disclosure will be described in detail below in conjunction with FIG. 3, FIG. 4C, and FIG. 5.
  • the manufacturing method includes the following steps S101-S102. Before the following steps, for example, the mask frame, the first mask strip, the second mask strip, the first mask plate, etc. can be obtained through a machining process (such as cutting, stamping, etc.) and an etching process if necessary.
  • a machining process such as cutting, stamping, etc.
  • Step S101 Fix at least one first mask strip and at least one second mask strip on the mask frame, wherein the at least one first mask strip extends along the first direction, and the at least one second mask strip Extending along the second direction, the first direction and the second direction cross, the at least one first mask strip and the at least one second mask strip cross each other to define at least one mask opening.
  • fixing at least one first mask strip and at least one second mask strip on the mask frame includes: first fixing the first mask strip 120 on the mask frame 110, and then fixing the second mask strip 130 is fixed on the mask frame 110, wherein the second mask strip 130 is located on a side of the first mask strip 120 away from the mask frame 110.
  • the method of fixing the first mask strip 120 and the second mask strip 130 on the mask frame 110 includes welding.
  • a plurality of welding grooves for fixing the first mask strip 120 and the second mask strip 130 may be formed on the mask frame 110, and the first mask strip 120 and the second mask strip 130 pass through the welding grooves respectively. The groove is welded on the mask frame 110.
  • the first mask strip and the second mask strip are integrally arranged, that is, the first mask strip and the second mask strip are formed as the second mask plate 150,
  • the extension strips on the second mask 150 extending along the first direction D1 can be regarded as the first mask strip 120
  • the extension strips on the second mask 150 extending along the second direction D2 can be regarded as the first mask strip 120.
  • Two mask strips 130, the second mask plate 150 includes at least one mask opening 125.
  • fixing the at least one first mask strip and the at least one second mask strip on the mask frame includes: fixing the second mask plate 150 on the mask frame 110.
  • the method of fixing the second mask plate 150 on the mask frame 110 includes welding.
  • a welding groove for fixing the second mask plate 150 may be formed on the mask frame 110, and the second mask plate 150 is welded to the mask frame 110 through the aforementioned welding groove; for another example, the second mask plate 150 can be directly welded on the surface of the mask frame 110; the embodiment of the present disclosure does not limit this.
  • Step S102 Fix the first mask on the mask frame, where the first mask extends along the first direction, the first mask includes a mask pattern area, and the mask pattern area includes multiple arrays arranged in an array.
  • the mask pattern area includes a first area and a second area corresponding to the first area, the second area surrounds the first area, each hole in the first area is a through hole, and each of the second areas
  • the hole is a through hole or a blind hole
  • the orthographic projection of at least one mask opening on the first mask plate at least covers the first area in the mask pattern area, at least one first mask strip and at least one second mask strip The orthographic projection on the first mask at least partially covers the second area in the mask pattern area.
  • the first mask may be the first mask 140 shown in FIG. 4C, and the embodiments of the present disclosure include but are not limited to this.
  • the first mask plate 140 includes a mask pattern area 140a, and the mask pattern area 140a includes a plurality of holes 140v arranged in an array.
  • the mask pattern area 140a includes a first area 140a1 (as shown by a solid rectangular frame 140a1 in FIG. 4C) and a second area 140a2 corresponding to the first area 140a1 (as shown in FIG. 4C).
  • each hole 140V in the first region 140a1 is a through hole 140v1 (as shown by the white hollow ellipse in FIG. 4C), and each hole 140v in the second region 140a2 is a through hole 140v1. (Shown as the white hollow ellipse in Fig. 4C) or blind hole 140v2 (shown as the black solid ellipse in Fig. 4C).
  • fixing the first mask plate on the mask frame includes: fixing the first mask plate 140 to the first mask strip 120 and the second mask strip The side of 130 away from the mask frame 110.
  • the first mask plate 140 is fixed on the mask frame 110 by welding.
  • fixing the first mask on the mask frame includes: fixing the first mask 140 on the second mask 150 (the first mask The strip and the second mask strip are integrally arranged as a side of the second mask plate 150) away from the mask frame 110.
  • the first mask plate 140 is fixed on the mask frame 110 by welding.
  • step S102 it must be ensured that the orthographic projection of the mask opening 125 on the first mask plate 140 at least covers the first area 140a1 in the mask pattern area 140a, as well as the first mask strip 120 and the second mask.
  • the orthographic projection of the film strip 130 on the first mask plate 140 at least partially covers the second area 140a2 in the mask pattern area 140a.
  • At least one embodiment of the present disclosure also provides an evaporation method, which includes using the masking device provided by any of the above embodiments (for example, the masking device 2 shown in FIG. 3 or the masking device shown in FIG. 5). 3) As a mask, vapor-deposit the object to be vapor-deposited.
  • FIG. 7 is a schematic diagram of an evaporation method provided by at least one embodiment of the present disclosure. It should be noted that, for clarity and conciseness, the mask device in FIG. 7 only shows the mask pattern area 140a of the first mask plate in the mask device, and does not show other structures of the mask device. .
  • the vapor deposition source 210 is located on one side of the mask device (for example, the side of the mask frame 110 away from the first mask plate 140).
  • the vapor deposition object 220 (for example, a substrate to be vapor deposited on which a driving circuit structure, such as a driving circuit array is formed) is located on the other side of the mask device (for example, a part of the first mask plate 140 away from the mask frame 110) One side).
  • the vapor deposition direction of the vapor deposition source 210 (shown by the arrow in FIG. 7) faces the mask device and the object to be vapor deposited 220.
  • the opening of the blind hole on the mask pattern area 140a faces the vapor deposition source 210 and faces away from the object to be vaporized 220, so that the blind hole itself can be used to accommodate the vapor deposition process.
  • Evaporated evaporation material Evaporated evaporation material.
  • the object to be evaporated 220 includes an area to be evaporated 220a
  • the area to be evaporated 220a corresponds to the first area 140a1 on the mask pattern area 140a
  • the first area 140a1 is on the object to be evaporated 220
  • the above orthographic projection covers the area to be vaporized 220a. Therefore, the mask opening 125 may expose the corresponding area 220a to be vaporized.
  • the center of the first area 140a1 and the center of the area to be vaporized 220a substantially coincide.
  • the size of the first area 140a1 is equal to or slightly larger than the size of the area 220 to be evaporated in all directions parallel to the first mask or the plane where the object to be vaporized 220 is located.
  • the shape of the first area 140a1 corresponds to the shape of the area to be vaporized 220a; for example, the shape of the first area 140a1 is designed according to the shape of the area to be vaporized 220a.
  • the size of the mask opening of the mask device can also be adjusted accordingly according to product design requirements.
  • FIG. 8 is a schematic diagram of a comparison of sizes of a first area and a to-be-evaporated area provided by at least one embodiment of the present disclosure.
  • the size of the region to be vaporized 220a in the second direction D2 is W0
  • the size of the first region 140a1 in the second direction D2 is W1.
  • W0 is equal to or Slightly smaller than W1.
  • the value range of W0/W1 may be [99%, 100%], [99.5%, 100%], [99.8%, 99.9%], etc.
  • the present disclosure includes but is not limited to this.
  • the size of the region to be vaporized 220a in the first direction D1 is L0, and the size of the first region 140a1 in the first direction D1 is L1.
  • L0 is equal to or Slightly smaller than L1.
  • the value range of L0/L1 can be [99%, 100%], [99.7%, 100%], [99.85%, 99.99%], [99.9%, 99.95%], etc., The present disclosure includes but is not limited to this.
  • the orthographic projection of the first area 140a1 on the object 220 to be evaporated overlaps the area 220a to be evaporated.
  • the entire first area 140a1 is an absolute effective mask area; for example, in other embodiments, the orthographic projection of the portion of the first region 140a1 near the center on the object to be vaporized 220 overlaps with the region 220a to be vaporized. In this case, the portion of the first region 140a1 near the center is an absolute effective mask. Area, the effective mask area except the absolute effective mask area is a relatively effective mask area.
  • the evaporation material emitted by the evaporation source 210 can be deposited on the evaporation area 220a of the object to be evaporated 220 through the through hole 140v1 in the first area 140a1;
  • a mask strip 120 and a second mask strip 130 are blocked (or blocked by the second mask 150), and the evaporation material cannot pass through the through holes 140v1 in the dummy area 140a2 and be deposited on the object 220 to be evaporated.
  • using the vapor deposition method to vaporize the object to be vaporized 220 includes forming at least one functional layer of the light-emitting element on the object to be vaporized 220 by vapor deposition.
  • at least one functional layer of the light-emitting element corresponds to at least part of the through hole 140v1 of the first region 140a1, that is, at least one functional layer of the light-emitting element is formed in the vapor-deposition area of the object 220 to be vapor-deposited.
  • the light-emitting element may include an organic light-emitting element.
  • At least one functional layer of the light-emitting element may include, but is not limited to, an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, or a hole injection layer.
  • the pattern of at least one functional layer formed by vapor deposition is substantially the same as the pattern of the through hole in the first region 140a1.
  • the pattern of each functional layer is substantially the same as the pattern of the corresponding through hole, and the pattern of at least one functional layer as a whole is substantially the same as the pattern of the through hole in the first region as a whole.
  • the masking device includes a plurality of first regions 140a1.
  • the object to be vaporized 220 (for example, a substrate to be vaporized) includes a plurality of regions to be vaporized 220a.
  • the vapor deposition object 220 can be cut to obtain, for example, a plurality of display substrates, wherein each display substrate includes a vapor-deposited area 220 a to be vapor-deposited.
  • a display panel and the like can be further manufactured, which is not limited in the embodiments of the present disclosure.
  • At least one embodiment of the present disclosure further provides a display device, which includes a light-emitting element formed by the vapor deposition method provided in any of the foregoing embodiments of the present disclosure.
  • the display device may include the aforementioned display substrate, which is not limited in the embodiments of the present disclosure.
  • the display device provided by the above-mentioned embodiment of the present disclosure may be: display substrate, display panel, display, television, electronic paper display device, mobile phone, tablet computer, notebook computer, digital photo frame, navigator, etc., any product with display function Or parts.
  • the above-mentioned display device may also include other conventional components or structures.
  • those skilled in the art can set other conventional components or structures according to specific application scenarios. This is not limited.

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Abstract

一种掩膜装置及其制造方法、蒸镀方法、显示装置。该掩膜装置包括：掩膜边框；沿第一方向延伸的至少一个第一掩膜条和沿第二方向延伸的至少一个第二掩膜条，固定在掩膜边框上；以及沿第一方向延伸的第一掩膜板，固定在掩膜边框上。第一掩膜条和第二掩膜条彼此交叉限定至少一个掩膜开口，第一掩膜板包括掩膜图案区，掩膜图案区包括阵列排布的多个孔。掩膜图案区包括第一区域和对应于第一区域的第二区域，第二区域包围第一区域，第一区域中的每个孔均为通孔，第二区域中的每个孔为通孔或盲孔。掩膜开口在第一掩膜板上的正投影至少覆盖掩膜图案区中的第一区域，第一掩膜条和第二掩膜条在第一掩膜板上的正投影至少部分覆盖掩膜图案区中的第二区域。

Description

掩膜装置及其制造方法、蒸镀方法、显示装置
本申请要求于2019年9月12日递交、申请号为PCT/CN 2019/105713的PCT国际申请的优先权，在此全文引用上述PCT国际申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种掩膜装置及其制造方法、蒸镀方法、显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示面板具有厚度薄、重量轻、宽视角、主动发光、发光颜色连续可调、成本低、响应速度快、能耗小、驱动电压低、工作温度范围宽、生产工艺简单、发光效率高及可柔性显示等优点，在手机、平板电脑、数码相机等显示领域的应用越来越广泛。为了提高OLED显示面板的色域、对比度及亮度效率，往往采用独立的子像素发光层实现彩色显示，如红(R)色子像素采用能够发红光的发光层，绿(G)色子像素采用能够发绿光的发光层，蓝(B)色子像素采用能够发蓝光的发光层。
通常采用蒸镀等薄膜沉积方法制备OLED显示面板，尤其是小尺寸的OLED显示面板。蒸镀独立的子像素发光层时需要使用精细金属掩膜板(Fine Metal Mask，FMM)。FMM的质量，如FMM的受力均匀性、网格结构的位置精度等，直接决定了发光层的蒸镀质量，进而对显示效果产生影响。因此提高FMM的质量对于提升显示面板的品质很重要。
发明内容
本公开至少一实施例提供一种掩膜装置，该掩膜装置包括：掩膜边框；沿第一方向延伸的至少一个第一掩膜条和沿第二方向延伸的至少一个第二掩膜条，固定在所述掩膜边框上；以及沿所述第一方向延伸的第一掩膜板，固定在所述掩膜边框上；其中，所述第一方向与所述第二方向交叉，所述至少一个第一掩膜条和所述至少一个第二掩膜条彼此交叉限定至少一个掩膜开口，所述第一掩膜板包括掩膜图案区，所述掩膜图案区包括阵列排布的多个孔，所述掩膜图案区包括第一区域和对应于所述第一区域的第二区域，所述第二区域包围所述第一区域，所述第一区域中的每个所述孔均为通孔，所述第二区域中的每个所述孔为通孔或盲孔，所述至少一个掩膜开口在所述第一掩膜板上的正投影至少覆盖所述掩膜图案区中的所述第一区域，所述至少一个第一掩膜条和所述至少一个第二掩膜条在所述第一掩膜板上的正投影至少部分覆盖所述掩膜图案区中的所述第二区域。
例如，在本公开一些实施例提供的掩膜装置中，在垂直于所述第一掩膜板的方向上，所述盲孔的深度与所述第一掩膜板的厚度的比值的取值范围为[1/4，3/4]。
例如，在本公开一些实施例提供的掩膜装置中，所述第一掩膜板位于所述第一掩膜条 和所述第二掩膜条的远离所述掩膜边框的一侧。
例如，在本公开一些实施例提供的掩膜装置中，所述多个孔在所述掩膜图案区中均匀分布。
例如，在本公开一些实施例提供的掩膜装置中，所述第一区域和所述第二区域连续且共同构成矩形的掩膜图案区。
例如，在本公开一些实施例提供的掩膜装置中，所述掩膜图案区包括沿所述第一方向排列的多个第一区域以及与所述多个第一区域一一对应的多个第二区域，每个所述第二区域包围与之对应的所述第一区域，每个所述第一区域为矩形，每个所述第二区域为回字形。
例如，在本公开一些实施例提供的掩膜装置中，所述多个孔具有相同的平面形状和相同的平面尺寸。
例如，在本公开一些实施例提供的掩膜装置中，所述多个孔的形状包括矩形、菱形、圆形、六边形之一。
例如，在本公开一些实施例提供的掩膜装置中，所述多个孔在所述第一方向上排列形成多行孔，所述第一掩膜条在所述第一掩膜板上的正投影覆盖所述第二区域中的远离所述第一区域的至少3行孔。
例如，在本公开一些实施例提供的掩膜装置中，所述多个孔在所述第二方向上排列形成多列孔，所述第二掩膜条在所述第一掩膜板上的正投影覆盖所述第二区域中的远离所述第一区域的至少3列孔。
例如，在本公开一些实施例提供的掩膜装置中，所述掩膜装置包括多个所述第一掩膜板，相邻的所述第一掩膜板之间的缝隙在所述第一掩膜条上的正投影位于所述第一掩膜条内。
例如，在本公开一些实施例提供的掩膜装置中，所述第一掩膜条和所述第二掩膜条分立设置或一体设置。
例如，在本公开一些实施例提供的掩膜装置中，所述掩膜开口的形状包括矩形、圆形、椭圆形、扇形和多边形之一。
例如，在本公开一些实施例提供的掩膜装置中，所述第一掩膜板还包括端部，所述端部在第一方向上位于所述掩膜图案区的两侧，所述端部包括与所述掩膜边框的外边缘平齐的边缘。
例如，在本公开一些实施例提供的掩膜装置中，所述第一区域在所述第二方向上的尺寸为W1，所述第二区域位于所述第一区域在所述第二方向上的第一侧的部分在所述第二方向上的尺寸为W2，W2/W1的取值范围为[0.1％，3.2％]。
例如，在本公开一些实施例提供的掩膜装置中，所述第一掩膜板还包括围绕所述掩膜图案区的周边区，所述掩膜图案区在所述第二方向上的尺寸为W3，所述周边区位于所述掩膜图案区在所述第二方向上的第一侧的部分在所述第二方向上的尺寸为W4，W4/W3的取值范围为[0.5％，3.8％]。
例如，在本公开一些实施例提供的掩膜装置中，所述第一区域在所述第一方向上的尺寸为L1，所述第二区域位于所述第一区域在所述第一方向上的第二侧的部分在所述第一方向上的尺寸为L2，L2/L1的取值范围为[5％，7.5％]。
本公开至少一实施例还提供一种掩膜装置的制造方法，该制造方法包括：将至少一个第一掩膜条和至少一个第二掩膜条固定在掩膜边框上，其中，所述至少一个第一掩膜条沿第一方向延伸，所述至少一个第二掩膜条沿第二方向延伸，所述第一方向与所述第二方向交叉，所述至少一个第一掩膜条和所述至少一个第二掩膜条彼此交叉限定至少一个掩膜开口；以及将第一掩膜板固定在所述掩膜边框上，其中，所述第一掩膜板沿所述第一方向延伸，所述第一掩膜板包括掩膜图案区，所述掩膜图案区包括阵列排布的多个孔，所述掩膜图案区包括第一区域和对应于所述第一区域的第二区域，所述第二区域包围所述第一区域，所述第一区域中的每个所述孔均为通孔，所述第二区域中的每个所述孔为通孔或盲孔，所述至少一个掩膜开口在所述第一掩膜板上的正投影至少覆盖所述掩膜图案区中的所述第一区域，所述至少一个第一掩膜条和所述至少一个第二掩膜条在所述第一掩膜板上的正投影至少部分覆盖所述掩膜图案区中的所述第二区域。
例如，在本公开一些实施例提供的制造方法中，将所述第一掩膜板固定在所述掩膜边框上，包括：将所述第一掩膜板固定在所述第一掩膜条和所述第二掩膜条的远离所述掩膜边框的一侧。
例如，在本公开一些实施例提供的制造方法中，所述第一掩膜条和所述第二掩膜条的固定方式或所述第一掩膜板的固定方式包括焊接。
本公开至少一实施例还提供一种蒸镀方法，该蒸镀方法包括：使用本公开任一实施例提供的掩膜装置作为掩膜对待蒸镀对象进行蒸镀。
例如，在本公开一些实施例提供的蒸镀方法中，所述盲孔的开口面向蒸镀源。
例如，在本公开一些实施例提供的蒸镀方法中，所述待蒸镀对象包括待蒸镀区域，所述第一区域在所述蒸镀对象上的正投影覆盖所述待蒸镀区域。
例如，在本公开一些实施例提供的蒸镀方法中，所述待蒸镀区域在所述第二方向上的尺寸为W0，所述第一区域在所述第二方向上的尺寸为W1，W0/W1的取值范围[99.8％，99.9％]；所述待蒸镀区域在所述第一方向上的尺寸为L0，所述第一区域在所述第一方向上的尺寸为L1，L0/L1的取值范围为[99.9％，99.95％]。
例如，在本公开一些实施例提供的蒸镀方法中，对所述待蒸镀对象进行蒸镀，包括：在所述待蒸镀对象上通过蒸镀形成发光元件的至少一个功能层。
例如，在本公开一些实施例提供的蒸镀方法中，所述至少一个功能层的图案与所述第一区域中的所述通孔的图案大致相同。
本公开至少一实施例还提供一种显示装置，该显示装置包括：本公开任一实施例提供的蒸镀方法形成的发光元件。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为一种掩膜装置的俯视示意图；
图2为图1所示的掩膜装置中的精细金属掩膜板的局部放大示意图；
图3为本公开至少一实施例提供的一种掩膜装置的俯视示意图；
图4A为图3所示的掩膜装置中的掩膜边框的俯视示意图；
图4B为图3所示的掩膜装置中的第一掩膜条和第二掩膜条的俯视示意图；
图4C为图3所示的掩膜装置中的第一掩膜板的放大示意图；
图4D为图4C所示的第一掩膜板上的各个区域的尺寸示意图；
图5为本公开至少一实施例提供的另一种掩膜装置的结构示意图；
图6A为图5所示的掩膜装置中的第二掩膜板的俯视示意图；
图6B为图5所示的掩膜装置中的掩膜边框的俯视示意图；
图7为本公开至少一实施例提供的一种蒸镀方法的示意图；以及
图8为本公开至少一实施例提供的一种第一区域和待蒸镀区域的尺寸对比示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
下面通过几个具体的实施例对本公开进行说明。为了保持本公开实施例的以下说明清楚且简明，可省略已知功能和已知部(元)件的详细说明。当本公开实施例的任一部(元)件在一个以上的附图中出现时，该部(元)件在每个附图中由相同或类似的参考标号表示。
图1为一种掩膜装置的俯视示意图。如图1所示，该掩膜装置1包括例如金属边框10的边框，以及还包括设置在金属边框10上的遮挡条(Cover)20、支撑条(Howling)30和 长条状的精细金属掩膜板(FMM)40。金属边框10具有开孔区域，多个精细金属掩膜板40彼此并列布置以基本覆盖金属边框10所包围的开口区域，每个精细金属掩膜板40上设置有多个掩膜图案区40a，掩膜图案区40a与遮挡条20和支撑条30交叉限定的掩膜开口25(如图1中虚线框25所示)对应。例如，如图1所示，掩膜图案区40a在对应的掩膜开口25所在的平面内的正投影位于该对应的开口内(或者，掩膜图案区40a在金属边框10所在的平面内的正投影位于该对应的掩膜开口25在该平面内的正投影内)。
图2为图1所示的掩膜装置中的精细金属掩膜板40的局部放大示意图。如图2所示，精细金属掩膜板40包括掩膜图案区40a和周边区40b。掩膜图案区40a中布满阵列排布的通孔40v(例如，通孔40v通过刻蚀形成，例如对应于一个或多个被制备的显示面板的子像素)，而周边区40b中不存在通孔40v。周边区40b包括与遮挡条20对应的第一周边区域40b1和与支撑条30对应的第二周边区域40b2。
结合图1和图2所示，在使用该掩膜装置1对待蒸镀对象(例如，制备中的显示面板的基板)进行蒸镀时，蒸镀材料可以透过掩膜图案区40a中的通孔40v沉积在待蒸镀对象的待蒸镀区域(例如，显示面板的子像素中)；遮挡条20位于相邻的精细金属掩膜板40之间，并与精细金属掩膜板40的第一周边区域40b1交叠，遮挡条20用于对蒸镀材料进行遮挡，以防止蒸镀材料透过相邻的精细金属掩膜板40之间的缝隙沉积在待蒸镀对象上；支撑条30位于精细金属掩膜板40的相邻的掩膜图案区40a之间，并与精细金属掩膜板40的第二周边区域40b2交叠，支撑条30用于支撑精细金属掩膜板40，以减小精细金属掩膜板40的下垂量，由此提高沉积精度。
图1所示的掩膜装置1的制作过程通常包括：通过例如线切割工艺制备金属边框10、遮挡条20和支撑条30等，通过线切割工艺以及刻蚀工艺制备精细金属掩膜板40，再将遮挡条20和支撑条30依次焊接在金属边框10上，之后将精细金属掩膜板40张紧、焊接在金属边框10上。由于精细金属掩膜板40设置在遮挡条20和支撑条30的远离金属边框10的一侧，为了避免在将精细金属掩膜板40焊接在金属边框10上时因遮挡条20和支撑条30的厚度影响而造成精细金属掩膜板40弯曲，在金属边框10上通常会形成用于容纳遮挡条20和支撑条30的焊接凹槽(图1中未示出)。例如，上述焊接凹槽可以位于图1中遮挡条20和支撑条30与金属边框10的交叠位置处。
将精细金属掩膜板40张紧、焊接在金属边框10上的步骤称为张网，张网实际上是一个将精细金属掩膜板40展开并绷紧的过程。在精细金属掩膜板40中，掩膜图案区40a的中心区域和边缘区域具有不同的周围形貌。例如，掩膜图案区40a的中心区域的周围仍然均属于形成了通孔的掩膜图案区40a；而掩膜图案区40a的边缘区域的周围既存在属于形成了通孔的掩膜图案区40a的部分，又存在属于未作处理的周边区40b的部分。在张网过程中，由于精细金属掩膜板40的掩膜图案区40a和周边区40b存在较大的应力差异，掩膜图案区40a的边缘区域存在受力不均的问题，这容易导致掩膜图案区40a的边缘区域在张网过程中因受力不均而发生变形、产生褶皱。由此，使用图1所示的掩膜装置在显示面板上蒸镀发光单 元后，点亮显示面板时可能会出现显示面板的有效显示区(active area，AA)的四周存在颜色异常的现象。
在本公开的至少一个实施例中，如果一个掩膜图案区在对应的掩膜开口所在的平面内的正投影位于该对应的掩膜开口内(包括该正投影与该对应的掩膜开口完全重叠的情形)，则该掩膜图案区整体被称为“有效掩膜区”，例如，图1中的整个掩膜图案区40a均为有效掩膜区；如果一个掩膜图案区的一部分在对应的掩膜开口所在的平面内的正投影位于该对应的掩膜开口内(包括该正投影与该对应的掩膜开口完全重叠的情形)，且该掩膜图案区的其余部分在该对应的开口所在的平面内的正投影不与该对应的开口交叠，则该掩膜图案区的该一部分被称为“有效掩膜区”，相应地，该掩膜图案区的其余部分被称为“虚设区”。应当理解的是，在使用掩膜装置在显示面板上蒸镀发光单元时，有效掩膜区在显示面板上的正投影至少覆盖显示面板的有效显示区；在本公开的一些实施例中，如果有效掩膜区在显示面板上的正投影与有效显示区重叠，则该有效掩膜区整体被称为“绝对有效掩膜区”；在本公开的一些实施例中，如果有效掩膜区的一部分在显示面板上的正投影与有效显示区重叠，则该有效掩膜区的该一部分被称为“绝对有效掩膜区”，该有效掩膜区的其余部分被称为“相对有效掩膜区”。
本公开至少一实施例提供一种掩膜装置，该掩膜装置包括：掩膜边框；沿第一方向延伸的至少一个第一掩膜条和沿第二方向延伸的至少一个第二掩膜条，固定在掩膜边框上；以及沿第一方向延伸的第一掩膜板，固定在掩膜边框上；其中，第一方向与第二方向交叉，所述至少一个第一掩膜条和所述至少一个第二掩膜条彼此交叉限定至少一个掩膜开口；第一掩膜板包括掩膜图案区，该掩膜图案区包括阵列排布的多个孔；该掩膜图案区包括第一区域和对应于第一区域的第二区域，第二区域包围第一区域，第一区域中的每个孔均为通孔，第二区域中的每个孔为通孔或盲孔；所述至少一个掩膜开口在第一掩膜板上的正投影覆盖掩膜图案区中的第一区域，所述至少一个第一掩膜条和所述至少一个第二掩膜条在第一掩膜板上的正投影覆盖掩膜图案区中的第二区域。
本公开的一些实施例还提供对应于上述掩膜装置的制造方法、蒸镀方法和显示装置。
在本公开的实施例提供的掩膜装置中，第一区域中的各个通孔具有基本相同的周围形貌，可以将第一区域的至少靠近中心的部分限定为绝对有效掩膜区，从而避免张网过程中该绝对有效掩膜区因受力不均而发生变形、产生褶皱的问题，进而可以改善产品混色，提升产品良率；同时，第二区域中设置的孔减轻了第一掩膜板的质量，从而可以在张网过程中减小第一掩膜板的下垂量，由此提高沉积精度。
下面结合附图对本公开的一些实施例及其示例进行详细说明。
图3为本公开至少一实施例提供的一种掩膜装置的俯视示意图。如图3所示，该掩膜装置2包括掩膜边框110、至少一个第一掩膜条120、至少一个第二掩膜条130、第一掩膜板140。
例如，在一些实施例中，如图3所示，掩膜边框110可以为矩形边框；当然，在另一 些实施例中，掩膜边框110可以为其他任意合适的形状，本公开的实施例对此不作限制。例如，掩膜边框110的材料可以包括热稳定性高、热膨胀系数小的金属材料，例如因瓦(Invar)合金、不锈钢等，本公开的实施例对此不作限制。
图4A为图3所示的掩膜装置中的掩膜边框110的俯视示意图。例如，如图4A所示，掩膜边框110包括主表面1101、位于主表面1101上的多个凹槽1102和1103(图3中未示出)。例如，掩膜边框110的主表面1101除凹槽1102和1103之外的部分位于同一平面内。例如，如图4A所示，凹槽1102位于掩膜边框110的与第一方向D1交叉的边上，以用于容纳和固定沿第一方向D1延伸的第一掩膜条120；凹槽1103位于掩膜边框110的与第二方向D2交叉的边上，以用于容纳和固定沿第二方向D2延伸的第二掩膜条130。例如，在一些实施例中，第一掩膜条120位于第二掩膜条130下方，此时，在垂直于掩膜边框110的主表面1101的方向上，凹槽1102的深度基本等于或者略大于第一掩膜条120和第二掩膜条130的厚度之和，凹槽1103的深度基本等于或者略大于第二掩膜条130的厚度，从而可以使第二掩膜条130的远离掩膜边框110的表面与掩膜边框110的主表面1101基本位于同一平面。例如，在实际的制造过程中，第一掩膜条120的尺寸和凹槽1102的尺寸均存在一定的精度误差，为了确保第一掩膜条120的尺寸能够完全容纳和固定在对应的凹槽1102内，在垂直于第一掩膜条120的延伸方向上，每个凹槽1102的宽度可以略大于与之对应的第一掩膜条120的宽度；同理，在垂直于第二掩膜条130的延伸方向上，每个凹槽1103的宽度可以略大于与之对应的第二掩膜条130的宽度。例如，在使用掩膜装置2对待蒸镀对象进行蒸镀时，可以通过对掩膜边框110的相邻凹槽之间的位置(例如相邻的凹槽1103之间的位置)进行夹持，以对包括该掩膜边框110的掩膜装置2进行固定。需要说明的是，本公开的实施例对掩膜装置(包括图3所示的掩膜装置2及后续将要介绍的图5所示的掩膜装置3)在蒸镀过程中的固定方式不作限制。
例如，如图3所示，第一掩膜条120和第二掩膜条130均固定在掩膜边框110上，其中，第一掩膜条120沿第一方向D1延伸，第二掩膜条130沿第二方向D2延伸且与第一掩膜条120相交叉。例如，第一掩膜条120和第二掩膜条130可以分别通过上述凹槽1102和1103固定(例如，焊接)在掩膜边框110上。例如，第一掩膜条120和第二掩膜条130的材料可以包括热稳定性高、热膨胀系数小的金属材料，例如因瓦合金、不锈钢等，本公开的实施例对此不作限制。
图4B为图3所示的掩膜装置中的第一掩膜条120和第二掩膜条130的俯视示意图。例如，在一些实施例中，如图3和图4B所示，第一掩膜条120和第二掩膜条130分立设置，例如，第一掩膜条120位于第二掩膜条130下方，即第二掩膜条130位于第一掩膜条120的远离掩膜边框110的一侧，也即第一掩膜条120先被固定在掩膜边框110上，之后第二掩膜条130再被固定在掩膜边框110上。
例如，如图3和图4B所示，第一方向D1和第二方向D2交叉，从而，第一掩膜条120和第二掩膜条130彼此交叉限定至少一个掩膜开口125(如图3和图4B中虚线框125所示)。 例如，在一些实施例中，如图3和图4B所示，第一方向D1和第二方向D2可以互相垂直。例如，在一些实施例中，如图3和图4B所示，掩膜开口125均由第一掩膜条120和第二掩膜条130限定得到；例如，在另一些实施例中，至少部分掩膜开口125(例如，与掩膜边框110相邻的掩膜开口，图3和图4B中未示出)也可以由第一掩膜条120、第二掩膜条130和掩膜边框110共同限定得到。例如，在一些实施例中，如图3和图4B所示，掩膜开口125的形状可以为矩形(属于规则多边形)；例如，在另一些实施例中，掩膜开口125的形状可以为矩形、圆形、椭圆形、扇形和多边形(包括规则多边形和不规则多边形)之一。也就是说，本公开的实施例对掩膜开口的形状不作限制。需要说明的是，由于掩膜开口125的具体形状与第一掩膜条120和第二掩膜条130的形状有关，因此，本公开的实施例对第一掩膜条120和第二掩膜条130的具体形状亦不作限制。另外，还需要说明的是，本公开的实施例对掩膜开口125的尺寸和数量也不作限制。
例如，如图3所示，第一掩膜板140固定在掩膜边框110上。例如，在一些实施例中，如图3所示，第一掩膜板140位于第一掩膜条120和第二掩膜条130的远离掩膜边框110的一侧。例如，在一些实施例中，在第二掩膜条130被焊接在掩膜边框110上之后，第一掩膜板140也被焊接在掩膜边框110上。例如，第一掩膜板140的材料可以包括热稳定性高、热膨胀系数小的金属材料，例如因瓦合金、不锈钢等，本公开的实施例对此不作限制。
例如，如图3所示，第一掩膜板140沿第一方向D1延伸。例如，在一些实施例中，第二掩膜条130的靠近第一掩膜板140的表面与掩膜边框110的靠近第一掩膜板140的表面(即掩膜边框110的主表面1101)基本位于同一平面，从而第二掩膜条130可以支撑第一掩膜板140以减小第一掩膜板140的下垂量，由此提高沉积精度。
例如，如图3所示，第一掩膜板140包括掩膜图案区140a和围绕掩膜图案区140a的周边区140b。图4C为图3所示的掩膜装置2中的第一掩膜板140的放大示意图。
需要说明的是，在本公开的实施例和实际应用中，掩膜图案区一般是人为定义的。例如，掩膜图案区一般定义为具有与第一掩膜板上的多个通孔中最外围的通孔的依次连线(例如，通孔的中心连线)形成的图形相似的形状；例如，掩膜图案区为恰好包括上述多个通孔的最小面积的图形。需要说明的是，本公开的实施例对掩膜图案区的形状和尺寸不作具体限制。
例如，如图4C所示，掩膜图案区140a包括阵列排布的多个孔140v，而周边区140b中不存在孔140v。例如，在一些实施例中，如图4C所示，掩膜图案区140a为包括多个孔140v的最小面积的矩形区域，即该多个孔140v布满掩膜图案区140a。例如，该多个孔140v在掩膜图案区140a中均匀分布；例如，该多个孔140v在掩膜图案区140a中呈周期性分布。例如，该多个孔140v具有相同的平面形状和相同的平面尺寸。例如，该多个孔140v的形状包括但不限于矩形、菱形、圆形、六边形等。需要说明的是，本公开的实施例对孔140v的形状和尺寸不作具体限制。还需要说明的是，本公开的实施例对掩膜图案区140a的具体形状也不作限制。
例如，在一些实施例中，如图4C所示，掩膜图案区140a包括第一区域140a1(如图4C中的实线矩形框140a1所示)和对应于第一区域140a1的第二区域140a2(如图4C中的虚线矩形框与实线矩形框140a1之间的区域140a2所示)。例如，在一些实施例中，如图4C所示，第二区域140a2包围第一区域140a1。
例如，在一些实施例中，如图4C所示，第一区域140a1中的每个孔140V均为通孔140v1(如图4C中的白色空心椭圆所示)。例如，在一些实施例中，第二区域140a2中的每个孔140v为通孔140v1(如图4C中的白色空心椭圆所示)或盲孔140v2(如图4C中的黑色实心椭圆所示)。例如，在一些示例中，如图4C所示，第二区域140a2中的一部分孔140v均为通孔140v1，第二区域140a2中的另一部分孔140v均为盲孔140v2；例如，第二区域140a2中的通孔140v1和盲孔140v2可以按照任意方式(例如，有规律的或者无规律的方式)进行排列，例如，图4C示出了一种无规律排列的方式，但不应视作对本公开的实施例的限制。例如，在另一些示例中，第二区域140a2中的全部孔140v均为通孔140v1。例如，在再一些示例中，第二区域140a2中的全部孔140v均为盲孔140v2。需要说明的是，第二区域中通孔140v1和盲孔140v2各自的数量以及排列方式可以根据实际需要进行设置，本公开的实施例对此不作限制。
例如，在一些实施例中，在垂直于第一掩膜板140的方向上，盲孔140v2的深度与第一掩膜板140的厚度的比值的取值范围为[1/4，3/4]。需要说明的是，在本公开的实施例中，第一掩膜板140的厚度指的是第一掩膜板140的未开孔处的厚度或者第一掩膜板140的开孔处在开孔前的厚度。
例如，结合图3和图4C所示，掩膜开口125在第一掩膜板140上的正投影125P(如图4中被阴影部分包围的白底矩形区域125P所示)至少覆盖掩膜图案区140a中的第一区域140a1，第一掩膜条120和第二掩膜条130在第一掩膜板140上的正投影(如图4中阴影部分所示)至少部分覆盖掩膜图案区140a中的第二区域140a2。例如，第一掩膜条120在第一掩膜板140上的正投影沿第一方向D1延伸，并至少部分覆盖第二区域140a2,；第二掩膜条130在第一掩膜板140上的正投影沿第二方向延伸，并至少部分覆盖第二区域140a2。例如，在一些实施例中，如图4C所示，掩膜开口125在第一掩膜板140上的正投影125P不仅覆盖第一区域140a1，还覆盖第二区域140a2的一部分(如图4的白底矩形区域125P中的包围实线矩形框140a1的回字形区域所示，也即如图4的白底矩形区域125P中与实线矩形框140a1不交叠的回字形区域所示)，在此情况下，第一掩膜条120和第二掩膜条130在第一掩膜板140上的正投影覆盖第二区域140a2的剩余部分(如图4的虚线矩形框中的包围白底矩形区域125P的回字形区域所示，也即如图4中的虚线矩形框与阴影部分交叠的回字形区域所示)；例如，在另一些实施例中，掩膜开口125在第一掩膜板140上的正投影125P与第一区域140a1重叠，在此情况下，第一掩膜条120和第二掩膜条130在第一掩膜板140上的正投影完全覆盖第二区域140a2；需要说明的是，本公开的实施例对此不作限制。
例如，结合图3和图4C所示，掩膜图案区140a中由掩膜开口125限定的区域(即掩 膜开口125在第一掩膜板140上的正投影125P覆盖的区域)为有效掩膜区。例如，如图4C所示，第一区域140a1位于有效掩膜区内，第一区域140a1的面积等于或略小于有效掩膜区的面积；例如，有效掩膜区远离第一掩膜板140的掩膜图案区140a的边缘，即靠近第一掩膜板140的掩膜图案区140a的中心。例如，在使用该掩膜装置2对待蒸镀对象(例如，制备中的显示面板的基板)进行蒸镀时，有效掩膜区中的通孔140v1可以允许蒸镀材料沉积在待蒸镀对象上，而有效掩膜区中的盲孔140v2可以在其所在位置处阻止蒸镀材料沉积在待蒸镀对象上；例如，在一些实施例中，在使用该掩膜装置2对待蒸镀对象(例如，制备中的显示面板的基板)进行蒸镀时，第一区域140a1在待蒸镀对象上的正投影覆盖待蒸镀对象的待蒸镀区域(例如，制备中的显示面板的有效显示区)，从而，蒸镀材料可以透过第一区域140a1中的通孔140v1沉积在待蒸镀对象的待蒸镀区域上(例如，沉积在有效显示区的子像素中)。
例如，结合图3和图4C所示，第一掩膜条120和第二掩膜条130在第一掩膜板140上的正投影覆盖第一掩膜板140的掩膜图案区140a中的除有效掩膜区之外的区域(即图4C中掩膜图案区140a的位于白底矩形区域125P外的区域)，该区域称为虚设区。例如，如图4C所示，虚设区位于第二区域140a2内，虚设区的面积等于或略小于第二区域140a2的面积。例如，在使用该掩膜装置2对待蒸镀对象(例如，制备中的显示面板的基板)进行蒸镀时，虚设区中的孔140v被第一掩膜条120和第二掩膜条130遮挡，从而蒸镀材料不能通过虚设区中的孔140v沉积在待蒸镀对象上(具体地，蒸镀材料不能通过虚设区中的通孔140v1沉积在待蒸镀对象上)。
例如，如图4C所示，第一区域140a1和第二区域140a2连续且共同构成矩形的掩膜图案区140a。应当理解的是，在本公开的实施例中，可以根据各区域允许存在的孔的种类将掩膜图案区140a划分为第一区域140a1和第二区域140a2，也可以根据各区域是否由掩膜开口125暴露将掩膜图案区140a划分为有效掩膜区和虚设区。也就是说，对于掩膜图案区140a，可以存在多种不同的划分方式，本公开的实施例对此不作限制。
例如，在一些实施例中，如图4C所示，掩膜图案区140a可以包括沿第一方向排列的多个第一区域140a1以及与该多个第一区域140a1一一对应的多个第二区域140a2，每个第二区域140a2包围与之对应的第一区域140a1。例如，在一些实施例中，如图4C所示，上述第一区域140a1为矩形，上述第二区域140a2为回字形。
例如，如图3所示，第一掩膜板140的周边区140b还可以包括原始端部140c(如图3中虚线框140c所示)。例如，如图3所示，该原始端部140c包括端部140c1和夹持部140c2(如图3的虚线框140c被虚线划分的两个部分所示)。例如，该原始端部140c(即端部140c1和夹持部140c2)在第一方向D1上位于掩膜图案区140a的两侧。例如，端部140c1包括与与掩膜边框110的外边缘平齐的边缘(如图3中将虚线框140c划分为140c1和140c2的虚线所示)，夹持部140c2在掩膜边框110所在平面上的正投影位于掩膜边框110外。例如，在一些示例中，在掩膜装置2的制造过程中，张网机器通过夹持该夹持部140c2对第一掩膜 板140进行张网操作。例如，在一些示例中，在完成张网操作后，可以对第一掩膜板140的原始端部140c进行切割，例如沿着掩膜边框110的外边缘(如图3中将虚线框140c划分为140c1和140c2的虚线所示)进行切割，以去除夹持部140c2，保留端部140c1，从而使端部140c1具有与掩膜边框110的外边缘平齐的边缘(如图3中将虚线框140c划分为140c1和140c2的虚线所示)。例如，第一掩膜板140通过端部140c1固定(例如，焊接)在掩膜边框110上。
例如，在使用该掩膜装置2对待蒸镀对象(例如，制备中的显示面板的基板)进行蒸镀时，有效掩膜区(如图4中的白底矩形区域125P所示)中的通孔140v1可以允许蒸镀材料沉积在待蒸镀对象上，而有效掩膜区中的盲孔140v2可以在其所在位置处阻止蒸镀材料沉积在待蒸镀对象上。例如，在一些实施例中，在使用该掩膜装置2对待蒸镀对象(例如，制备中的显示面板的基板)进行蒸镀时，掩膜图案区140a的第二区域140a2中的盲孔140v2的开口面向蒸镀源而背离待蒸镀对象，盲孔140v2本身可以用于容纳蒸镀过程中蒸镀源发出的蒸镀材料。例如，在一些实施例中，第二区域140a2中的盲孔140v2的开口面向第一掩膜条120所在的平面，也面向第二掩膜条130所在的平面，本公开包括但不限于此。
例如，在一些实施例中，在使用该掩膜装置2对待蒸镀对象(例如，制备中的显示面板的基板)进行蒸镀时，第一区域140a1在待蒸镀对象上的正投影覆盖待蒸镀对象的待蒸镀区域(例如，制备中的显示面板的有效显示区的基板)，从而，蒸镀材料可以透过第一区域140a1中的通孔140v1沉积在待蒸镀对象的待蒸镀区域上(例如，沉积在有效显示区的子像素中)。例如，在平行于第一掩膜板140或待蒸镀对象所在平面的各个方向上，第一区域140a1的尺寸均等于或略大于待蒸镀区域的尺寸。
例如，结合图3和图4C所示，第一掩膜条120可以遮挡与第一方向D1平行的虚设区(即掩膜图案区140a中的除有效掩膜区之外的区域)的边缘部分中的孔140v，以防止蒸镀材料透过与第一方向D1平行的虚设区的边缘部分中的通孔140v1沉积在待蒸镀对象上；例如，结合图3和图4C所示，在掩膜装置2包括多个第一掩膜板140的情况下，相邻的第一掩膜板140之间的缝隙在第一掩膜条120上的正投影位于第一掩膜条120内，从而第一掩膜条120还可以遮挡相邻的第一掩膜板140之间的缝隙，以防止蒸镀材料透过相邻的第一掩膜板140之间的缝隙沉积在待蒸镀对象上(参考图1所示的掩膜装置1中的遮挡条20的作用)。
例如，结合图3和图4C所示，第二掩膜条130可以遮挡与第二方向D2平行且位于相邻的有效掩膜区之间的虚设区中的孔140v，以防止蒸镀材料透过与第二方向D2平行且位于相邻的有效掩膜区之间的虚设区的部分中的通孔140v1沉积在待蒸镀对象上。例如，结合图3和图4C所示，第二掩膜条130还可以遮挡与第二方向D2平行的虚设区的边缘部分中的孔140v，以防止蒸镀材料透过与第二方向D2平行的虚设区的边缘部分中的通孔140v1沉积在待蒸镀对象上。例如，第二掩膜条130还可以用于支撑第一掩膜板140，以减小第一掩膜板140的下垂量(参考图1所示的掩膜装置1中的支撑条30的作用)，由此提高沉积 精度。
需要说明的是，图3所示的掩膜装置2包括的第一掩膜条120、第二掩膜条130和第一掩膜板140的数量均是示例性的，本公开的实施例对此不作限制。
图5为本公开至少一实施例提供的另一种掩膜装置的结构示意图。图5所示的掩膜装置3与图3所示的掩膜装置2的不同之处主要在于：在图3所示的掩膜装置2中，第一掩膜条120和第二掩膜条130是分立设置的，而在图5所示的掩膜装置3中，第一掩膜条和第二掩膜条可以是一体设置的(例如第一掩膜条和第二掩膜条形成为下文中将要说明的第二掩膜板150)。例如，第一掩膜条和第二掩膜条可以一体设置形成网状结构，本公开的实施例包括但不限于此。以下，结合图6A和图6B对图5所示的掩膜装置3与图3所示的掩膜装置2的不同之处进行详细说明。需要说明的是，图5所示的掩膜装置3的其他结构与图3所示的掩膜装置2基本相同，在此重复之处不再赘述。
例如，如图5所示，该掩膜装置3包括掩膜边框110’、第二掩膜板150、第一掩膜板140。例如，图5所示的掩膜装置3中的第一掩膜板140可以参考图3所示的掩膜装置2中的第一掩膜板140，还可以参考图4C所示的第一掩膜板140，在此重复之处不再赘述。
图6A为图5所示的掩膜装置中的第二掩膜板150的俯视示意图。例如，如图6A所示，第二掩膜板150上包括至少一个掩膜开口125(与图3中掩膜开口125对应)。例如，第二掩膜板150上的沿第一方向D1延伸的延伸条(如图6A中虚线框120’所示)可以视作第一掩膜条120，第二掩膜板150上的沿第二方向D2延伸的延伸条(如图6A中虚线框130’所示)可以视作第二掩膜条130。例如，第二掩膜板140的材料可以包括热稳定性高、热膨胀系数小的金属材料，例如因瓦合金、不锈钢等，本公开的实施例对此不作限制。
第二掩膜板150可以用于遮挡第一掩膜板140的虚设区中的孔140v以及相邻的第一掩膜板140之间的缝隙，还可以用于支撑第一掩膜板140。例如，第二掩膜板150可以设置在掩膜边框110’上，而第一掩膜板140设置在第二掩膜板150的远离掩膜边框110’的一侧。例如，图6A中的第二掩膜板150在掩膜边框110’所在平面上的正投影与图3中第一掩膜条120和第二掩膜条130在掩膜边框110所在平面上的正投影基本相同，本公开的实施例包括但不限于此。
图6B为图5所示的掩膜装置中的掩膜边框110’的俯视示意图。例如，如图6B所示，该掩膜边框110’包括主表面1101’、位于主表面1101’上的多个凹槽1102’和1103’(图5中未示出)。例如，掩膜边框110’的主表面1101’除凹槽1102’和1103’之外的部分位于同一平面内。例如，如图6B所示，凹槽1102’位于掩膜边框110’的与第一方向D1交叉的边上，以用于容纳和固定第二掩膜板150的沿第一方向D1延伸的延伸条(如图6A中虚线框120’所示)；凹槽1103’位于掩膜边框110’的与第二方向D2交叉的边上，以用于容纳和固定第二掩膜板150的沿第二方向D2延伸的延伸条(如图6A中虚线框130’所示)。与图4A所示的掩膜边框110不同的是，在图6B所示的掩膜边框110’中，在垂直于掩膜边框110’的主表面1101’的方向上，凹槽1102’和凹槽1103’的深度基本相同，且凹槽1102’和凹槽1103’ 的深度基本等于或者略大于第二掩膜板150的厚度，从而可以使第二掩膜板150的远离掩膜边框110’的表面与掩膜边框110’的主表面1101’基本位于同一平面。例如，图6B所示的掩膜边框110’的其他细节可以参考图4A所示的掩膜边框110的相关描述，在此重复之处不再赘述。
需要说明的是，图5所示的第二掩膜板150的形状是示例性的，本公开的实施例对第二掩膜板150的具体形状不作限制，只要第二掩膜板150上包括合适的掩膜开口125，且可以对第一掩膜板140的掩膜图案区140a进行适当遮挡(即遮挡掩膜图案区140a中的虚设区)即可。另外，本公开的实施例对第二掩膜板150是否通过凹槽固定在掩膜边框110’上不作限制，例如，第二掩膜板150也可以直接固定在掩膜边框110’的主表面上。
综上所述，在本公开的实施例提供的掩膜装置中，可以根据具体情况采用合适的方式将第一掩膜条和第二掩膜条(或者第二掩膜板)固定在掩膜边框上，该合适的方式不限于上述实施例中的各种方式。
本公开的实施例提供的掩膜装置，通过第一掩膜条120和第二掩膜条130对第一掩膜板140的掩膜图案区140a进行遮挡，将掩膜图案区140a靠近中心的部分(包括第一区域140a1)限定为有效掩膜区；第一区域140a1中的各个通孔140v1具有基本相同的周围形貌(每个通孔140v1周围均是形成了孔140v的区域，应力差异较小)，可以将第一区域140a1的至少靠近中心的部分限定为绝对有效掩膜区，从而避免张网过程中该绝对有效掩膜区因受力不均而发生变形、产生褶皱的问题，进而可以改善产品混色，提升产品良率。同时，本公开的实施例提供的掩膜装置，通过在第二区域140a2中设置孔140v(通孔140v1和/或盲孔140v2)，可以减轻第一掩膜板140的质量，从而可以在张网过程中减小第一掩膜板140的下垂量，由此提高沉积精度。
图4D为图4C所示的第一掩膜板上的各个区域的尺寸示意图。需要说明的是，为了清晰和简洁，图4D省略了第一掩膜板140上的孔140v。
例如，在一些实施例中，如图4D所示，第一区域140a1在第二方向D2上的尺寸为W1，第二区域140a2位于第一区域140a1在第二方向D2上的第一侧S1(第一侧S1如图4D中的黑色箭头S1所示)的部分在第二方向D2上的尺寸为W2，W2/W1的取值范围可以为[0.1％，3.2％]，本公开包括但不限于此。例如，在一些具体示例中，第一区域140a1在第二方向D2上的尺寸W1可以为65mm，第二区域140a2位于第一区域140a1在第二方向D2上的第一侧S1的部分在第二方向D2上的尺寸W2可以为2mm，在此情况下，掩膜图案区140a在第二方向上的尺寸W3(W3＝W1+2*W2)为69mm，W2/W1的取值约为3.1％，位于上述W2/W1的取值范围内；例如，在另一些具体示例中，第一区域140a1在第二方向D2上的尺寸W1可以为65mm，第二区域140a2位于第一区域140a1在第二方向D2上的第一侧S1的部分在第二方向D2上的尺寸W2可以为0.15mm，在此情况下，掩膜图案区140a在第二方向上的尺寸W3(W3＝W1+2*W2)为65.3mm，W2/W1的取值约为0.2％，也位于上述W2/W1的取值范围内。应当理解的是，在上述具体示例中，第一掩膜板140在 第二方向D2上的尺寸一般略大于掩膜图案区140a在第二方向上的尺寸W3；例如，第一掩膜板140在第二方向D2上的尺寸可以为70mm，本公开的实施例包括但不限于此。
例如，在一些实施例中，如图4D所示，掩膜图案区140a在第二方向上的尺寸为W3，周边区140b位于掩膜图案区140a在第二方向D2上的第一侧S1(第一侧S1如图4D中的黑色箭头S1所示)的部分在第二方向D2上的尺寸为W4，W4/W3的取值范围可以为[0.5％，3.8％]，本公开包括但不限于此。例如，在一些具体示例中，第一掩膜板140在第二方向D2上的尺寸(即W3+2*W4)可以为70mm，掩膜图案区140a在第二方向上的尺寸W3可以为69mm，周边区140b位于掩膜图案区140a在第二方向D2上的第一侧S1的部分在第二方向D2上的尺寸W4可以为0.5mm，在此情况下，W4/W3的取值约为0.7％，位于上述W4/W3的取值范围内；例如，在另一些具体示例中，第一掩膜板140在第二方向D2上的尺寸(即W3+2*W4)可以为70mm，掩膜图案区140a在第二方向上的尺寸W3可以为65.3mm，周边区140b位于掩膜图案区140a在第二方向D2上的第一侧S1的部分在第二方向D2上的尺寸W4可以为2.35mm，在此情况下，W4/W3的取值约为3.6％，也位于上述W4/W3的取值范围内。
例如，在一些实施例中，如图4D所示，第一区域140a1在第一方向D1上的尺寸为L1，第二区域140a2位于第一区域140a1在第一方向D1上的第二侧S2(第二侧S2如图4D中的黑色箭头S2所示)的部分在第一方向D1上的尺寸为L2，L2/L1的取值范围可以为[5％，7.5％]，本公开包括但不限于此。例如，在一些实施例中，如图4D所示，相邻的第一区域140a1之间的距离为L3，L3大致为L2的两倍。例如，在一些实施例中，L3/L1的取值范围可以为[10％，15％]，本公开包括但不限于此。
例如，在一些实施例中，如图4C所示，掩膜图案区140a中的多个孔140v在第一方向D1上排列形成多行孔，掩膜图案区140a中的多个孔在第二方向D2上排列形成多列孔。例如，在一些实施例中，虚设区的平行于第一方向D1的边缘到有效掩膜区之间的区域包括至少3行孔，即第一掩膜条120在第一掩膜板140上的正投影覆盖第二区域140a2中的远离第一区域140a1的至少3行孔。例如，第一掩膜条120在第一掩膜板140上的正投影可以覆盖第二区域140a2中的远离第一区域140a1的3行、4行、5行或更多行孔，本公开的实施例对此不作限制。例如，在一些实施例中，虚设区的平行于第二方向D2的边缘到有效掩膜区之间的区域以及虚设区位于相邻的有效掩膜区之间的区域均包括至少3列孔，即第二掩膜条130在第一掩膜板140上的正投影覆盖第二区域140a2中的远离第一区域140a1的至少3列孔。例如，第二掩膜条130在第一掩膜板140上的正投影可以覆盖第二区域140a2中的远离第一区域140a1的3列、4列、5列或更多行孔，本公开的实施例对此不作限制。例如，在一些实施例中，如图4C所示，有效掩膜区在掩膜图案区140a中对称分布；例如，在一些实施例中，有效掩膜区的中心与掩膜图案区140a的中心连线与第一方向D1平行，或者有效掩膜区的中心与掩膜图案区140a的中心重合。例如，在一些实施例中，有效掩膜区的中心可以与第一区域140a1的中心重合。
需要说明的是，在本公开的实施例中，“行”、“列”并非用于限定方向、形式等，而只是为了方便描述在第一方向或第二方向上排列的一组通孔，例如该组通孔的中心连线基本平行于第一方向或第二方向，但并不要求该组通孔的中心连线严格平行于第一方向或第二方向，也不要求该组通孔的中心连线必须是一条直线。
本公开至少一实施例还提供一种掩膜装置的制造方法。使用该制造方法可以制造本公开上述实施例提供的掩膜装置(例如图3所示的掩膜装置2和图5所示的掩膜装置3)。以下结合图3、图4C和图5对本公开的实施例提供的掩膜装置的制造方法进行详细描述。
例如，该制造方法包括下述步骤S101-S102。在下述步骤之前，例如可以通过机械加工工艺(例如切割、冲压等)以及如果需要还通过刻蚀工艺得到掩膜边框、第一掩膜条、第二掩膜条以及第一掩膜板等。
步骤S101：将至少一个第一掩膜条和至少一个第二掩膜条固定在掩膜边框上，其中，该至少一个第一掩膜条沿第一方向延伸，该至少一个第二掩膜条沿第二方向延伸，第一方向与第二方向交叉，该至少一个第一掩膜条和该至少一个第二掩膜条彼此交叉限定至少一个掩膜开口。
例如，在一些实施例中，如图3所示，第一掩膜条120和第二掩膜条130分立设置。从而，将至少一个第一掩膜条和至少一个第二掩膜条固定在掩膜边框上，包括：先将第一掩膜条120固定在掩膜边框110上，再将第二掩膜条130固定在掩膜边框110上，其中，第二掩膜条130位于第一掩膜条120的远离掩膜边框110的一侧。例如，将第一掩膜条120和第二掩膜条130固定在掩膜边框110上的方式包括焊接。例如，掩膜边框110上可以形成多个用于固定第一掩膜条120和第二掩膜条130的焊接凹槽，第一掩膜条120和第二掩膜条130分别通过上述焊接凹槽焊接在掩膜边框110上。
例如，在另一些实施例中，如图5所示，第一掩膜条和第二掩膜条一体设置，即第一掩膜条和第二掩膜条形成为第二掩膜板150，其中，第二掩膜板150上的沿第一方向D1延伸的延伸条可以视作第一掩膜条120，第二掩膜板150上的沿第二方向D2延伸的延伸条可以视作第二掩膜条130，第二掩膜板150上包括至少一个掩膜开口125。从而，将至少一个第一掩膜条和至少一个第二掩膜条固定在掩膜边框上，包括：将第二掩膜板150固定在掩膜边框110上。例如，将第二掩膜板150固定在掩膜边框110上的方式包括焊接。例如，掩膜边框110上可以形成用于固定第二掩膜板150的焊接凹槽，第二掩膜板150通过上述焊接凹槽焊接在掩膜边框110上；又例如，第二掩膜板150可以直接焊接在掩膜边框110的表面上；本公开的实施例对此不作限制。
需要说明的是，掩膜边框、第一掩膜条、第二掩膜条、第二掩膜板的更多细节(例如形状、尺寸、数量和设置等)可以参考前述掩膜装置的实施例中的相关描述，在此不再赘述。
步骤S102：将第一掩膜板固定在掩膜边框上，其中，第一掩膜板沿第一方向延伸，第一掩膜板包括掩膜图案区，掩膜图案区包括阵列排布的多个孔，掩膜图案区包括第一区域 和对应于第一区域的第二区域，第二区域包围第一区域，第一区域中的每个孔均为通孔，第二区域中的每个孔为通孔或盲孔，至少一个掩膜开口在第一掩膜板上的正投影至少覆盖掩膜图案区中的第一区域，至少一个第一掩膜条和至少一个第二掩膜条在第一掩膜板上的正投影至少部分覆盖掩膜图案区中的第二区域。
例如，在一些实施例中，第一掩膜板可以为图4C所示的第一掩膜板140，本公开的实施例包括但不限于此。例如，如图4C所示，第一掩膜板140包括掩膜图案区140a，掩膜图案区140a包括阵列排布的多个孔140v。例如，如图4C所示，掩膜图案区140a包括第一区域140a1(如图4C中的实线矩形框140a1所示)和对应于第一区域140a1的第二区域140a2(如图4C中的虚线矩形框与实线矩形框140a1之间的区域140a2所示)，第二区域140a2包围第一区域140a1。例如，如图4C所示，第一区域140a1中的每个孔140V均为通孔140v1(如图4C中的白色空心椭圆所示)，第二区域140a2中的每个孔140v为通孔140v1(如图4C中的白色空心椭圆所示)或盲孔140v2(如图4C中的黑色实心椭圆所示)。
例如，在一些实施例中，如图3所示，将第一掩膜板固定在掩膜边框上，包括：将第一掩膜板140固定在第一掩膜条120和第二掩膜条130的远离掩膜边框110的一侧。例如，第一掩膜板140通过焊接的方式固定在掩膜边框110上。
例如，在另一些实施例中，如图5所示，将第一掩膜板固定在掩膜边框上，包括：将第一掩膜板140固定在第二掩膜板150(第一掩膜条和第二掩膜条一体设置为第二掩膜板150)的远离掩膜边框110的一侧。例如，第一掩膜板140通过焊接的方式固定在掩膜边框110上。
例如，在步骤S102中，还要确保掩膜开口125在第一掩膜板140上的正投影至少覆盖掩膜图案区140a中的第一区域140a1，以及第一掩膜条120和第二掩膜条130在第一掩膜板140上的正投影至少部分覆盖掩膜图案区140a中的第二区域140a2。
需要说明的是，第一掩膜板的更多细节(包括第一掩膜板的端部、掩膜图案区的形状等)可以参考前述掩膜装置的实施例中的相关描述，在此不再赘述。
本公开的实施例提供的掩膜装置的制造方法的技术效果可以参考上述实施例中关于掩膜装置的相应描述，在此不再赘述。
本公开至少一实施例还提供一种蒸镀方法，该蒸镀方法包括使用上述任一实施例提供的掩膜装置(例如图3所示的掩膜装置2或图5所示的掩膜装置3)作为掩膜对待蒸镀对象进行蒸镀。图7为本公开至少一实施例提供的一种蒸镀方法的示意图。需要说明的是，为了清晰和简洁，图7中的掩膜装置仅示出了该掩膜装置中的第一掩膜板的掩膜图案区140a，而未示出该掩膜装置的其他结构。
例如，如图7所示，在使用该蒸镀方法进行蒸镀时，蒸镀源210位于掩膜装置的一侧(例如掩膜边框110的远离第一掩膜板140的一侧)，待蒸镀对象220(例如待蒸镀的基板，该基板上例如形成有驱动电路结构，例如驱动电路阵列)位于掩膜装置的另一侧(例如第一掩膜板140的远离掩膜边框110的一侧)。蒸镀源210的蒸镀方向(如图7中箭头所示) 面向掩膜装置和待蒸镀对象220。例如，在使用该蒸镀方法进行蒸镀时，掩膜图案区140a上的盲孔的开口面向蒸镀源210而背离待蒸镀对象220，从而，盲孔本身可以用于容纳蒸镀过程中蒸发的蒸镀材料。
例如，如图7所示，待蒸镀对象220上包括待蒸镀区域220a，待蒸镀区域220a与掩膜图案区140a上的第一区域140a1对应，第一区域140a1在待蒸镀对象220上的正投影覆盖待蒸镀区域220a。因此，掩膜开口125可以暴露出对应的待蒸镀区域220a。例如，在垂直于第一掩膜板或待蒸镀对象220的方向上，第一区域140a1的中心与待蒸镀区域220a的中心基本重合。例如，在平行于第一掩膜板或待蒸镀对象220所在平面的各个方向上，第一区域140a1的尺寸均等于或略大于待蒸镀区域220的尺寸。例如，第一区域140a1的形状与待蒸镀区域220a的形状对应；例如，第一区域140a1的形状是根据待蒸镀区域220a的形状而设计的。例如，掩膜装置的掩膜开口的大小也可以根据产品设计需要而进行相应调整。
图8为本公开至少一实施例提供的一种第一区域和待蒸镀区域的尺寸对比示意图。例如，在一些实施例中，如图8所示，待蒸镀区域220a在第二方向D2上的尺寸为W0，第一区域140a1在第二方向D2上的尺寸为W1，通常，W0等于或略小于W1。例如，在一些实施例中，W0/W1的取值范围可以为[99％，100％]、[99.5％，100％]、[99.8％，99.9％]等，本公开包括但不限于此。例如，在一些实施例中，如图8所示，待蒸镀区域220a在第一方向D1上的尺寸为L0，第一区域140a1在第一方向D1上的尺寸为L1，通常，L0等于或略小于L1。例如，在一些实施例中，L0/L1的取值范围可以为[99％，100％]、[99.7％，100％]、[99.85％，99.99％]、[99.9％，99.95％]等，本公开包括但不限于此。例如，在一些实施例中，第一区域140a1在待蒸镀对象220上的正投影与待蒸镀区域220a重叠，在此情况下，第一区域140a1整体为绝对有效掩膜区；例如，在另一些实施例中，第一区域140a1靠近中心的部分在待蒸镀对象220上的正投影与待蒸镀区域220a重叠，在此情况下，第一区域140a1靠近中心的部分为绝对有效掩膜区，有效掩膜区的除绝对有效掩膜区之外的部分为相对有效掩膜区。
例如，在蒸镀过程中，蒸镀源210发出的蒸镀材料可以透过第一区域140a1中的通孔140v1沉积在待蒸镀对象220的待蒸镀区域220a；而虚设区140a2由于被第一掩膜条120和第二掩膜条130遮挡(或者被第二掩膜板150遮挡)，蒸镀材料无法透过虚设区140a2中的通孔140v1沉积在待蒸镀对象220上。
例如，在一些实施例中，使用该蒸镀方法对待蒸镀对象220进行蒸镀，包括在待蒸镀对象220上通过蒸镀形成发光元件的至少一个功能层。例如，发光元件的至少一个功能层与第一区域140a1的至少部分通孔140v1对应，即发光元件的至少一个功能层形成在待蒸镀对象220的待蒸镀区域中。例如，发光元件可以包括有机发光元件，例如，发光元件的至少一个功能层可以包括但不限于电子注入层、电子传输层、发光层、空穴传输层或空穴注入层等。例如，蒸镀形成的至少一个功能层的图案与第一区域140a1中的通孔的图案大致相同。具体地，每个功能层的图案与对应的通孔的图案大致相同，至少一个功能层就整体而 言的图案与第一区域中的通孔就整体而言的图案大致相同。
例如，在一些示例中，如图7所示，掩膜装置包括多个第一区域140a1，相应地，待蒸镀对象220(例如，待蒸镀的基板)包括多个待蒸镀区域220a。在完成蒸镀过程后，可以对该蒸镀对象220进行切割以获得例如多个显示基板，其中，每个显示基板包括一个蒸镀好的待蒸镀区域220a。例如，基于该显示基板，可以进一步制造显示面板等，本公开的实施例对此不作限制。
本公开的实施例提供的蒸镀方法的技术效果可以参考上述实施例中关于掩膜装置的相应描述，在此不再赘述。
例如，本公开至少一实施例还提供一种显示装置，该显示装置包括采用本公开上述任一实施例提供的蒸镀方法形成的发光元件。例如，该显示装置可以包括前述显示基板，本公开的实施例对此不作限制。
例如，本公开的上述实施例提供的显示装置可以为：显示基板、显示面板、显示器、电视、电子纸显示装置、手机、平板电脑、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。需要说明的是，上述显示装置还可以包括其他常规部件或结构，例如，为实现显示装置的必要功能，本领域技术人员可以根据具体应用场景设置其他的常规部件或结构，本公开的实施例对此不作限制。
本公开的实施例提供的显示装置的技术效果可以参考上述实施例中关于掩膜装置的相应描述，在此不再赘述。
对于本公开，有以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层的厚度或区域的尺寸被放大或缩小，即这些附图并非按照实际的比例绘制。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围由所附的权利要求确定。

Claims (27)

  1. 一种掩膜装置，包括：
    掩膜边框；
    沿第一方向延伸的至少一个第一掩膜条和沿第二方向延伸的至少一个第二掩膜条，固定在所述掩膜边框上；以及
    沿所述第一方向延伸的第一掩膜板，固定在所述掩膜边框上；其中，
    所述第一方向与所述第二方向交叉，所述至少一个第一掩膜条和所述至少一个第二掩膜条彼此交叉限定至少一个掩膜开口，
    所述第一掩膜板包括掩膜图案区，所述掩膜图案区包括阵列排布的多个孔，
    所述掩膜图案区包括第一区域和对应于所述第一区域的第二区域，所述第二区域包围所述第一区域，所述第一区域中的每个所述孔均为通孔，所述第二区域中的每个所述孔为通孔或盲孔，
    所述至少一个掩膜开口在所述第一掩膜板上的正投影至少覆盖所述掩膜图案区中的所述第一区域，所述至少一个第一掩膜条和所述至少一个第二掩膜条在所述第一掩膜板上的正投影至少部分覆盖所述掩膜图案区中的所述第二区域。
  2. 根据权利要求1所述的掩膜装置，其中，在垂直于所述第一掩膜板的方向上，所述盲孔的深度与所述第一掩膜板的厚度的比值的取值范围为[1/4，3/4]。
  3. 根据权利要求1或2所述的掩膜装置，其中，所述第一掩膜板位于所述第一掩膜条和所述第二掩膜条的远离所述掩膜边框的一侧。
  4. 根据权利要求1-3任一项所述的掩膜装置，其中，所述多个孔在所述掩膜图案区中均匀分布。
  5. 根据权利要求1-4任一项所述的掩膜装置，其中，所述第一区域和所述第二区域连续且共同构成矩形的掩膜图案区。
  6. 根据权利要求1-5任一项所述的掩膜装置，其中，所述掩膜图案区包括沿所述第一方向排列的多个第一区域以及与所述多个第一区域一一对应的多个第二区域，每个所述第二区域包围与之对应的所述第一区域，每个所述第一区域为矩形，每个所述第二区域为回字形。
  7. 根据权利要求1-6任一项所述的掩膜装置，其中，所述多个孔具有相同的平面形状和相同的平面尺寸。
  8. 根据权利要求7所述的掩膜装置，其中，所述多个孔的形状包括矩形、菱形、圆形、六边形之一。
  9. 根据权利要求1-8任一项所述的掩膜装置，其中，所述多个孔在所述第一方向上排列形成多行孔，
    所述第一掩膜条在所述第一掩膜板上的正投影覆盖所述第二区域中的远离所述第一区 域的至少3行孔。
  10. 根据权利要求1-9任一项所述的掩膜装置，其中，所述多个孔在所述第二方向上排列形成多列孔，
    所述第二掩膜条在所述第一掩膜板上的正投影覆盖所述第二区域中的远离所述第一区域的至少3列孔。
  11. 根据权利要求1-10任一项所述的掩膜装置，其中，所述掩膜装置包括多个所述第一掩膜板，
    相邻的所述第一掩膜板之间的缝隙在所述第一掩膜条上的正投影位于所述第一掩膜条内。
  12. 根据权利要求1-11任一项所述的掩膜装置，其中，所述第一掩膜条和所述第二掩膜条分立设置或一体设置。
  13. 根据权利要求1-12任一项所述的掩膜装置，其中，所述掩膜开口的形状包括矩形、圆形、椭圆形、扇形和多边形之一。
  14. 根据权利要求1-13任一项所述的掩膜装置，其中，所述第一掩膜板还包括端部，所述端部在第一方向上位于所述掩膜图案区的两侧，
    所述端部包括与所述掩膜边框的外边缘平齐的边缘。
  15. 根据权利要求1-14任一项所述的掩膜装置，其中，所述第一区域在所述第二方向上的尺寸为W1，所述第二区域位于所述第一区域在所述第二方向上的第一侧的部分在所述第二方向上的尺寸为W2，W2/W1的取值范围为[0.1％，3.2％]。
  16. 根据权利要求1-15任一项所述的掩膜装置，其中，所述第一掩膜板还包括围绕所述掩膜图案区的周边区，
    所述掩膜图案区在所述第二方向上的尺寸为W3，所述周边区位于所述掩膜图案区在所述第二方向上的第一侧的部分在所述第二方向上的尺寸为W4，W4/W3的取值范围为[0.5％，3.8％]。
  17. 根据权利要求1-16任一项所述的掩膜装置，其中，所述第一区域在所述第一方向上的尺寸为L1，所述第二区域位于所述第一区域在所述第一方向上的第二侧的部分在所述第一方向上的尺寸为L2，L2/L1的取值范围为[5％，7.5％]。
  18. 一种掩膜装置的制造方法，包括：
    将至少一个第一掩膜条和至少一个第二掩膜条固定在掩膜边框上，其中，所述至少一个第一掩膜条沿第一方向延伸，所述至少一个第二掩膜条沿第二方向延伸，所述第一方向与所述第二方向交叉，所述至少一个第一掩膜条和所述至少一个第二掩膜条彼此交叉限定至少一个掩膜开口；以及
    将第一掩膜板固定在所述掩膜边框上，其中，所述第一掩膜板沿所述第一方向延伸，所述第一掩膜板包括掩膜图案区，所述掩膜图案区包括阵列排布的多个孔，所述掩膜图案区包括第一区域和对应于所述第一区域的第二区域，所述第二区域包围所述第一区域，所 述第一区域中的每个所述孔均为通孔，所述第二区域中的每个所述孔为通孔或盲孔，所述至少一个掩膜开口在所述第一掩膜板上的正投影至少覆盖所述掩膜图案区中的所述第一区域，所述至少一个第一掩膜条和所述至少一个第二掩膜条在所述第一掩膜板上的正投影至少部分覆盖所述掩膜图案区中的所述第二区域。
  19. 根据权利要求18所述的制造方法，其中，将所述第一掩膜板固定在所述掩膜边框上，包括：将所述第一掩膜板固定在所述第一掩膜条和所述第二掩膜条的远离所述掩膜边框的一侧。
  20. 根据权利要求18或19所述的制造方法，其中，所述第一掩膜条和所述第二掩膜条的固定方式或所述第一掩膜板的固定方式包括焊接。
  21. 一种蒸镀方法，包括：
    使用根据权利要求1-17任一项所述的掩膜装置作为掩膜对待蒸镀对象进行蒸镀。
  22. 根据权利要求21所述的蒸镀方法，其中，所述盲孔的开口面向蒸镀源。
  23. 根据权利要求21或22所述的蒸镀方法，其中，所述待蒸镀对象包括待蒸镀区域，所述第一区域在所述蒸镀对象上的正投影覆盖所述待蒸镀区域。
  24. 根据权利要求21-23任一项所述的蒸镀方法，其中，所述待蒸镀区域在所述第二方向上的尺寸为W0，所述第一区域在所述第二方向上的尺寸为W1，W0/W1的取值范围[99.8％，99.9％]；
    所述待蒸镀区域在所述第一方向上的尺寸为L0，所述第一区域在所述第一方向上的尺寸为L1，L0/L1的取值范围为[99.9％，99.95％]。
  25. 根据权利要求21-24任一项所述的蒸镀方法。其中，对所述待蒸镀对象进行蒸镀，包括：
    在所述待蒸镀对象上通过蒸镀形成发光元件的至少一个功能层。
  26. 根据权利要求25所述的蒸镀方法，其中，所述至少一个功能层的图案与所述第一区域中的所述通孔的图案大致相同。
  27. 一种显示装置，包括：采用权利要求21-26任一项所述的蒸镀方法形成的发光元件。
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