WO2019080875A1 - 掩膜板 - Google Patents

掩膜板

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Publication number
WO2019080875A1
WO2019080875A1 PCT/CN2018/111670 CN2018111670W WO2019080875A1 WO 2019080875 A1 WO2019080875 A1 WO 2019080875A1 CN 2018111670 W CN2018111670 W CN 2018111670W WO 2019080875 A1 WO2019080875 A1 WO 2019080875A1
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WO
WIPO (PCT)
Prior art keywords
holes
hole
equal
effective
vapor deposition
Prior art date
Application number
PCT/CN2018/111670
Other languages
English (en)
French (fr)
Inventor
苏君海
龚建国
吴俊雄
冉应刚
柯贤军
李建华
Original Assignee
信利（惠州）智能显示有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信利（惠州）智能显示有限公司 filed Critical 信利（惠州）智能显示有限公司
Priority to US16/758,418 priority Critical patent/US20200340093A1/en
Publication of WO2019080875A1 publication Critical patent/WO2019080875A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features

Definitions

  • the present application relates to the field of organic light emitting display manufacturing technology, and in particular to a mask.
  • the most influential process of the AMOLED (Active-matrix organic light emitting diode) production process is the evaporation process.
  • the basic process of the evaporation process is to heat the organic material to evaporate the organic material.
  • the through holes etched by the high-precision fine mask are evaporated onto the glass substrate to form a light-emitting unit.
  • High-precision fine masks are usually fabricated by etching methods.
  • the high-precision fine mask thickness is ⁇ 40um. Due to its small thickness, the traditional high-precision fine mask is very soft and extremely deformable.
  • the conventional high-precision fine mask design usually requires setting a Dummy area outside the effective area of the evaporation, and reducing the high-precision fine mask through the Dummy area.
  • the deformation of the traditional high-precision fine mask is due to the fact that there is a physical part that is not etched between the effective area and the Dummy, resulting in different mechanical properties of the high-precision fine mask. Under the influence of the force of the net, wrinkles are likely to occur, and the generation of wrinkles will cause color mixing of the vapor deposition products, and the color mixture will seriously affect the yield of the AMOLED.
  • a mask is provided.
  • a mask comprising: a reserved area and at least one effective evaporation zone, the reserved area being disposed outside of the effective evaporation zone;
  • the at least one effective evaporation zone is provided with a plurality of first through holes
  • the reserved area is provided with a plurality of second through holes, the second through hole has the same shape as the first through hole, and the size of the second through hole and the size of the first through hole Equal, and the spacing between the second through holes is equal to the spacing between the first through holes.
  • each of the first through holes is disposed in a rectangular array
  • each of the second through holes is disposed in a rectangular array, and a row spacing of the second through holes and a line spacing of the first through holes Equally, a column pitch of the second through holes is equal to a column pitch of the first through holes, and at least a portion of the second through holes are aligned with the first through holes.
  • the row spacing of the first vias is equal to the column spacing.
  • the effective vapor deposition zone has a square shape.
  • the effective vapor deposition zone has a circular shape.
  • the effective evaporation zone has an irregular shape.
  • the second through hole extends through two opposite surfaces of the reserved area.
  • the first through hole and the second through hole respectively have a circular cross section, and an aperture of the first through hole and an aperture of the second through hole are equal.
  • first through hole and the second through hole respectively have a square cross section, and the width of the first through hole and the width of the second through hole are equal.
  • the first through hole and the second through hole respectively have a polygonal cross section, and a width of the first through hole and a width of the second through hole are equal.
  • each of the first through holes is disposed in a rectangular array
  • each of the second through holes is disposed in a rectangular array
  • a row spacing of the second through holes and a line spacing of the first through holes Equally, the column spacing of the second through holes is equal to the column spacing of the first through holes, and at least a portion of the second through holes are aligned with the first through holes, the first through holes
  • the row spacing is equal to the column spacing
  • the effective evaporation zone has a square shape
  • the second through hole extends through two opposite surfaces of the reserved area
  • the holes each have a circular cross section, and the apertures of the first through holes and the apertures of the second through holes are equal.
  • the mask plate is provided with a second through hole in a reserved area outside the effective vapor deposition zone. Since the shape, size and spacing of the second through hole are the same as the shape, size and spacing of the first through hole, the reservation is reserved.
  • the zone has the same mechanical properties as the effective vapor deposition zone. Therefore, the reserved zone and the effective vapor deposition zone have the same stress characteristics, so that wrinkles are not easily generated between the reserved zone and the effective vapor deposition zone, thereby effectively avoiding pixel color mixing. The evaporation effect is better and the yield of AMOLED is improved.
  • FIG. 1 is a schematic structural view of a mask according to an embodiment.
  • a mask comprising a reserved area and at least one effective evaporation zone, the reserved area being disposed outside of the effective evaporation zone; the at least one effective evaporation zone is provided with a plurality of first passes a hole having a second through hole having a shape identical to a shape of the first through hole, and a size of the second through hole and the first through hole The dimensions are equal, and the spacing between the second through holes is equal to the spacing between the first through holes.
  • the second through hole is opened in the reserved area outside the effective evaporation zone, and the shape, size, and spacing of the second through hole are the same as the shape, size, and spacing of the first through hole, so reserved
  • the zone has the same mechanical properties as the effective vapor deposition zone. Therefore, the reserved zone and the effective vapor deposition zone have the same stress characteristics, so that wrinkles are not easily generated between the reserved zone and the effective vapor deposition zone, thereby effectively avoiding pixel color mixing. The evaporation effect is better and the yield of AMOLED is improved.
  • a mask 10 including: a reserved area 120 and an effective evaporation zone 110, the reserved area 120 being disposed in the effective evaporation zone 110.
  • the plurality of first through holes 111 are defined in the effective vapor deposition zone 110; the plurality of second through holes 121 are defined in the reserved area 120, and the shape of the second through holes 121 and the first through holes 111 are The shape of the second through hole 121 is equal to the size of the first through hole 111, and the spacing between the second through holes 121 and the distance between the first through holes 111 equal.
  • the cross-sectional shape of the second through hole 121 is the same as the cross-sectional shape of the first through hole 111, and the cross-sectional shape of the second through hole 121 is the same as the cross-sectional shape of the first through hole 111.
  • the width of the second through hole 121 is equal to the width of the first through hole 111, for example, the width of the cross section of the second through hole 121 and the width of the cross section of the first through hole 111.
  • the spacing between the two of the second through holes 121 is equal to the spacing between the two of the first through holes 111.
  • the mask 10 is divided into a reserved area 120 and an effective evaporation area 110.
  • the effective evaporation area 110 is an effective evaporation area for vapor deposition to form effective pixels, for example, effective steaming.
  • the plating zone 110 is used for vapor deposition of the pixel pattern, and the evaporated organic material is evaporated onto the substrate through the first through hole 111 of the effective evaporation zone 110, and the first through hole 111 is a pixel hole for making the organic organic The material penetrates and is evaporated on the substrate.
  • the reserved area 120 is a non-vapor deposition area, and the reserved area 120 may also be referred to as a Dummy area.
  • the reserved area 120 can be regarded as an area formed by the mask sheet 10 extending outside the effective vapor deposition zone 110, and the reserved area 120 is not used for evaporation.
  • the second through hole 121 is not provided in the reserved area 120, but the second through hole 121 is not used for evaporation, that is, the second through hole 121 does not pass through the evaporated organic material, and is in use.
  • the second through hole 121 of the reserved area 120 is blocked to prevent the evaporated organic material from passing through the second through hole 121 of the reserved area 120. That is to say, in the masking process 10 in the present embodiment, the evaporation of the pixel pattern is performed only in the effective vapor deposition zone 110 during the vapor deposition process, and the reserved area 120 does not vaporize the pixel pattern.
  • the second through hole 121 is formed in the reserved area 120, since the shape of the second through hole 121 is the same as the shape of the first through hole 111, the size of the second through hole 121 is equal to the size of the first through hole 111, and the second The spacing between the through holes 121 is equal to the spacing between the first through holes 111, and therefore, the reserved area 120 has the same structure as the effective vapor deposition area 110, and therefore, the reserved area 120 has the effective evaporation area 110.
  • the reserved region 120 and the effective vapor deposition zone 110 have the same stress characteristics, so that the reserved region 120 and the effective vapor deposition zone 110 are not easily wrinkled under the influence of the tensioning force, thereby effectively avoiding pixel color mixing, thereby making it possible to avoid pixel color mixing.
  • the evaporation effect is better, and the yield of AMOLED is improved.
  • the mask 10 further includes a barrier film having the same shape as the reserved region 120.
  • the shape of the film is aligned with the reserved area 120 and abuts the reserved area 120.
  • the film is disposed in the second through hole 121.
  • the barrier film can isolate the organic material of the reserved area 120, and the organic material is prevented from passing through the second through hole 121, thereby further improving the vapor deposition effect.
  • each of the first through holes 111 is disposed in a rectangular array
  • each of the second through holes 121 is disposed in a rectangular array
  • a row spacing of the second through holes 121 and the first through holes 111 are The row spacing is equal
  • the column spacing of the second vias 121 is equal to the column spacing of the first vias 111
  • at least a portion of the second vias 121 are aligned with the first vias.
  • the first through holes 111 are aligned, for example, at least one row of the second through holes 121 is aligned with the row of the first through holes 111, for example, at least one column of the second through holes 121 is aligned with the row of the first through holes 111. That is, a portion of the second through holes 121 corresponding to the first through holes 111 in the reserved area 120, each row is aligned with a row of first through holes 111, and each column is aligned with a column of the first through holes 111.
  • each of the first through holes 111 is arranged in a plurality of rows and columns, and the row spacing between the first through holes 111 of the adjacent two rows is equal, and the first through holes of the adjacent two columns
  • the column spacings between the 111 are equal to each other;
  • the second through holes 121 are arranged in a plurality of rows and columns, and the row spacing of the second through holes 121 is equal to the row spacing of the first through holes 111, and the columns of the second through holes 121 are arranged.
  • the pitch is equal to the column pitch of the first through holes 111, and for the second through holes 121 partially aligned with the first through holes 111, each row of the second through holes 121 is aligned with the row of first through holes 111, each column
  • the two through holes 121 are aligned with the first through holes 111, so that the distribution structure of the second through holes 121 of the reserved area 120 is the same as that of the first through holes 111 of the effective vapor deposition zone 110, so that the reserved area
  • the 120 has the same structure as the effective vapor deposition zone 110, so that the reserved area 120 has the same mechanical properties as the effective vapor deposition zone 110, further making the evaporation effect better.
  • the row spacing of the first via holes 111 is equal to the column pitch, that is, the row spacing of the first via holes 111 is equal to the column pitch of the first via holes 111, and is in the effective evaporation region 110 in this embodiment.
  • the first through holes 111 are equally spaced in the lateral direction and the longitudinal direction.
  • the row spacing of the second through holes 121 is equal to the column spacing.
  • the row spacing of the second through holes 121 is equal to the spacing of the second through holes 121.
  • the column spacing, the second through holes 121 of the reserved area 120 are also equally spaced in the lateral direction and the longitudinal direction, so that the opening distances of the reserved area 120 and the effective evaporation area 110 are equal, which is advantageous for further avoiding the mask.
  • the plate 10 produces wrinkles under the influence of the tensioning force, which further makes the evaporation effect better.
  • the display screen of the mobile phone may be square or rectangular, and the electronic The display on the watch or smart meter can be rectangular or circular, and for the display such as camera and other sensors on the display panel, the display can be irregular shape, in order to adapt to different display requirements, in one implementation
  • the shape of the effective evaporation zone 110 is square.
  • the shape of the reserved area 120 is a square shape, and the reserved area 120 of the mouth shape surrounds the effective evaporation zone 110 of the square.
  • the effective evaporation zone 110 is circular in shape.
  • the reserved area 120 has a circular shape, and the annular reserved area 120 surrounds the circular effective evaporation zone 110, so that the effective evaporation zone 110 is evaporated on the substrate.
  • the display area of the corresponding display screen is circular.
  • the effective evaporation zone 110 has an irregular shape.
  • the reserved area 120 is a hollow hollow irregular shape, and the shape of the reserved area 120 matches the shape of the effective vapor deposition area 110, and the reserved area 120 surrounds the irregular shape.
  • the vapor deposition zone 110 is such that, by the vapor deposition of the effective vapor deposition zone 110, an irregularly shaped pixel region is formed on the substrate, and the display area of the corresponding display screen is irregular.
  • the positional accuracy of the first through hole 111 is less than 10 ⁇ m, for example, the width of the first through hole 111 is greater than or equal to 20 ⁇ m, for example, the first through hole 111 The width is less than or equal to 30 ⁇ m.
  • the positional accuracy of the second through hole 121 is less than 10 ⁇ m, for example, the width of the second through hole 121 is greater than or equal to 20 ⁇ m, for example, the width of the second through hole 121 is less than or equal to 30 ⁇ m.
  • the second through hole 121 penetrates through two opposite surfaces of the reserved area 120, that is, the second through hole 121 is a through hole, and both ends of the second through hole 121 are transparent.
  • the structure of the second through hole 121 is made the same as that of the first through hole 111, so that the reserved area 120 has the same mechanical properties as the effective vapor deposition zone 110, so that the reserved area 120 and the effective evaporation area 110 are It is not easy to produce wrinkles between them, effectively avoiding pixel color mixing, which makes the evaporation effect better.
  • the through holes on the mask 10 may be formed by etching.
  • the second The through hole 121 is a non-permeate hole.
  • the second through hole 121 is provided with a stopper film.
  • the two ends of the second through hole 121 are not transparent, specifically, the mask 10 is During the etching, the second via hole 121 is formed by half etching on the reserved region 120, and the effective vapor deposition region 110 is completely etched to form the first via hole 111, that is, when the reserved region 120 is etched, the second The through hole 121 is etched to form a stopper film, so that the two ends of the second through hole 121 are not transparent, and thus, the reserved area 120 is provided with a second pass having the same shape and size as the first through hole 111 of the effective vapor deposition zone 110.
  • the reserved area 120 has the same mechanical properties as the effective evaporation zone 110, effectively avoiding wrinkles, and since the second through hole 121 is not transparent, the organic material after evaporation can be effectively prevented, so , can avoid evaporation of the position on the corresponding substrate of the reserved area 120 Material, thus making vapor deposition better.
  • the first through holes 111 may be circular holes, square holes or polygonal holes for vapor deposition to form different pixel patterns.
  • the first through holes 111 and the second pass The holes 121 have a circular cross section, respectively, and the apertures of the first through holes 111 and the apertures of the second through holes 121 are equal.
  • the first through hole 111 and the second through hole 121 are respectively circular in cross section.
  • the first through hole 111 and the second through hole 121 are respectively circular holes.
  • the first through hole 111 and the second through hole 121 respectively have a square cross section, and the width of the first through hole 111 and the width of the second through hole 121 are equal.
  • the first through hole 111 and the second through hole 121 are respectively square in cross section.
  • the first through hole 111 and the second through hole 121 are respectively square holes.
  • the first through hole 111 and the second through hole 121 respectively have a polygonal cross section, and the width of the first through hole 111 and the width of the second through hole 121 are equal.
  • the first through hole 111 and the second through hole 121 are respectively polygonal in cross section.
  • the first through hole 111 and the second through hole 121 are respectively polygonal holes.
  • the first through hole 111 is a circular hole, a square hole or a polygonal hole. In other embodiments, it may also be an irregularly shaped through hole, which is not cumbersome in this embodiment, so that it can adapt to different pixel patterns.
  • the evaporation requirement since the second through hole 121 has the same shape as the first through hole 111, the reserved area 120 and the effective evaporation area 110 have the same stress characteristics, so that the reserved area 120 and the effective evaporation area 110 is not easy to produce wrinkles under the influence of the tension of the net force, effectively avoiding the color mixing of the pixels, so that the evaporation effect is better.
  • the effective evaporation zone may be multiple, for example, two effective evaporation zones, two effective evaporation zones are adjacently disposed, and the reserved zone is disposed outside the two effective evaporation zones. And between two effective evaporation zones. For another example, there are three effective vapor deposition zones, and, for example, four effective vapor deposition zones. For the implementation of the plurality of effective vapor deposition zones, it is not cumbersome to describe in the embodiment that the number of the effective vapor deposition zones can be formed by etching on the mask according to the display requirements of the display screen, and the reserved area is set and effectively steamed.
  • the first through holes of the plating zone are shaped, sized, and spaced apart by the second through holes such that the reserved regions and the effective vapor deposition zones have the same stress characteristics.
  • the entire mask has a through hole as a whole, and the conventional mask is different only in the effective vapor deposition zone.
  • the pixel opening of the effective evaporation zone portion of the entire mask is identical to the pixel opening of the non-effective area (reserved area), and the entire mask is completely filled with the through holes, so that the high-precision fine mask is entirely
  • the distribution of the through holes is relatively uniform, so that the overall mechanical properties of the mask in the effective evaporation zone and the reserved area are consistent, for example, the effective vapor deposition zone and the reserved zone have the same performance parameters in elastic modulus and shear modulus. Therefore, the high-precision fine mask is deformed uniformly under the action of the tensioning force, thereby avoiding the wrinkles of the high-precision fine mask and reducing the color mixing of the product illuminating pixels.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种掩膜板（10），包括预留区（120）和至少一个有效蒸镀区（110），预留区（120）设置于有效蒸镀区（110）的外侧；至少一个有效蒸镀区（110）开设有若干第一通孔（111）；预留区（120）开设有若干第二通孔（121），第二通孔（121）的形状与第一通孔（111）的形状相同，且第二通孔（121）的尺寸与第一通孔（111）的尺寸相等，且第二通孔（121）之间的间距与第一通孔（111）之间的间距相等。

Description

掩膜板
本申请要求于2017年10月25日提交中国专利局、申请号为201711006705.4、申请名称为“掩膜板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及有机发光显示制造技术领域，特别是涉及掩膜板。
背景技术
AMOLED(Active-matrix organic light emitting diode，有源矩阵有机发光二极体)生产制程中最影响良率的制程为蒸镀制程，蒸镀制程的基本过程即通过加热有机材料，使得有机材料蒸发，并通过高精度精细掩膜板蚀刻完成的通孔蒸镀到玻璃基板上，形成发光单元。
高精度精细掩膜板通常通过蚀刻方法制作。高精度精细掩膜板厚度≤40um，由于其厚度较小，因此，传统的高精度精细掩膜板非常柔软，极易变形。为了防止掩膜板变形，目前传统的高精度精细掩膜板的设计方案通常需要在蒸镀的有效区之外设置Dummy(预留)区，通过Dummy区来减少因高精度精细掩膜板在张网力作用下的变形；然而传统的高精度精细掩膜板的设计方案因有效区和Dummy之间会存在不被蚀刻的实体部分，导致高精度精细掩膜板整体的力学性能参数不一样，在张网受力的影响下容易产生褶皱，褶皱的产生会使得蒸镀产品产生混色，混色的产生会严重影响AMOLED的良率。
发明内容
根据本申请的各种实施例，提供一种掩膜板。
一种掩膜板，包括：预留区和至少一个有效蒸镀区，所述预留区设置于 所述有效蒸镀区的外侧；
所述至少一个有效蒸镀区开设有若干第一通孔；
所述预留区开设有若干第二通孔，所述第二通孔的形状与所述第一通孔的形状相同，且所述第二通孔的尺寸与所述第一通孔的尺寸相等，且所述第二通孔之间的间距与所述第一通孔之间的间距相等。
在其中一个实施例中，各所述第一通孔呈矩形阵列设置，各所述第二通孔呈矩形阵列设置，所述第二通孔的行间距与所述第一通孔的行间距相等，所述第二通孔的列间距与所述第一通孔的列间距相等，且至少部分所述第二通孔与所述第一所述通孔对齐设置。
在其中一个实施例中，所述第一通孔的行间距与列间距相等。
在其中一个实施例中，所述有效蒸镀区的形状为方形。
在其中一个实施例中，所述有效蒸镀区的形状为圆形。
在其中一个实施例中，所述有效蒸镀区的形状为不规则形状。
在其中一个实施例中，所述第二通孔贯穿所述预留区的两个相对的表面。
在其中一个实施例中，所述第一通孔和所述第二通孔分别具有圆形截面，且所述第一通孔的孔径和所述第二通孔的孔径相等。
在其中一个实施例中，所述第一通孔和所述第二通孔分别具有方形截面，且所述第一通孔的宽度和所述第二通孔的宽度相等。
在其中一个实施例中，所述第一通孔和所述第二通孔分别具有多边形截面，且所述第一通孔的宽度和所述第二通孔的宽度相等。
在其中一个实施例中，各所述第一通孔呈矩形阵列设置，各所述第二通孔呈矩形阵列设置，所述第二通孔的行间距与所述第一通孔的行间距相等，所述第二通孔的列间距与所述第一通孔的列间距相等，且至少部分所述第二通孔与所述第一所述通孔对齐设置，所述第一通孔的行间距与列间距相等，所述有效蒸镀区的形状为方形，所述第二通孔贯穿所述预留区的两个相对的表面，所述第一通孔和所述第二通孔分别具有圆形截面，且所述第一通孔的孔径和所述第二通孔的孔径相等。
上述掩膜板，通过在有效蒸镀区外侧的预留区开设第二通孔，由于第二通孔的形状、尺寸以及间距与第一通孔的形状、尺寸以及间距相同，因此，预留区具有与有效蒸镀区具有相同的力学性能，因此，预留区和有效蒸镀区具有相同的应力特性，使得预留区和有效蒸镀区之间不容易产生褶皱，有效避免像素混色，使得蒸镀效果更佳，提高AMOLED的良率。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他实施例的附图。
图1为一个实施例的掩膜板的结构示意图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
需要说明的是，当元件被称为“固定于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。
例如，一种掩膜板，包括预留区和至少一个有效蒸镀区，所述预留区设 置于所述有效蒸镀区的外侧；所述至少一个有效蒸镀区开设有若干第一通孔；所述预留区开设有若干第二通孔，所述第二通孔的形状与所述第一通孔的形状相同，且所述第二通孔的尺寸与所述第一通孔的尺寸相等，且所述第二通孔之间的间距与所述第一通孔之间的间距相等。
上述实施例中，通过在有效蒸镀区外侧的预留区开设第二通孔，由于第二通孔的形状、尺寸以及间距与第一通孔的形状、尺寸以及间距相同，因此，预留区具有与有效蒸镀区具有相同的力学性能，因此，预留区和有效蒸镀区具有相同的应力特性，使得预留区和有效蒸镀区之间不容易产生褶皱，有效避免像素混色，使得蒸镀效果更佳，提高AMOLED的良率。
在一个实施例中，如图1所示，提供一种掩膜板10，包括：预留区120和一个有效蒸镀区110，所述预留区120设置于所述有效蒸镀区110的外侧；所述有效蒸镀区110开设有若干第一通孔111；所述预留区120开设有若干第二通孔121，所述第二通孔121的形状与所述第一通孔111的形状相同，且所述第二通孔121的尺寸与所述第一通孔111的尺寸相等，且所述第二通孔121之间的间距与所述第一通孔111之间的间距相等。
例如，所述第二通孔121的截面形状与所述第一通孔111的截面形状相同，所述第二通孔121的横截面形状与所述第一通孔111的横截面形状相同，例如，所述第二通孔121的宽度与所述第一通孔111的宽度相等，例如，所述第二通孔121的横截面的宽度与所述第一通孔111的横截面的宽度相等，例如，两个所述第二通孔121之间的间距与两个所述第一通孔111之间的间距相等。
例如，该掩膜板10被划分为预留区120和有效蒸镀区110，具体地，该有效蒸镀区110为有效的蒸镀区，用于蒸镀形成有效的像素，例如，有效蒸镀区110用于蒸镀像素图案，蒸发后的有机材料通过有效蒸镀区110的第一通孔111蒸镀至基板上，该第一通孔111为像素孔，用于使得蒸发有的有机材料穿透，并蒸镀在基板上。
该预留区120为非蒸镀区，预留区120也可称为Dummy区。该预留区120 可以视为掩膜板10在有效蒸镀区110的外侧延伸形成的区域，该预留区120并不用于蒸镀。
值得一提的是，预留区120开设有第二通孔121，但第二通孔121不用于蒸镀，也就是说，第二通孔121不通过蒸发后的有机材料，使用中，可通过在预留区120设置挡膜，将预留区120的第二通孔121挡住，避免蒸发后的有机材料从预留区120的第二通孔121中通过。也就是说，本实施例中的掩膜板10在蒸镀过程中，仅在有效蒸镀区110进行像素图案的蒸镀，预留区120并不蒸镀像素图案。
由于预留区120开设第二通孔121，由于第二通孔121的形状与第一通孔111的形状相同，第二通孔121的尺寸与第一通孔111的尺寸相等，且第二通孔121之间的间距与第一通孔111之间的间距相等，因此，使得预留区120与有效蒸镀区110具有相同的结构，因此，预留区120具有与有效蒸镀区110具有相同的力学性能，预留区120和有效蒸镀区110具有相同的应力特性，使得预留区120和有效蒸镀区110在张网力的影响下也不容易产生褶皱，有效避免像素混色，使得蒸镀效果更佳，提高AMOLED的良率。
为了避免在蒸发后的有机材料通过预留区120的第二通孔121蒸镀到基板上，例如，掩膜板10还包括挡膜，所述挡膜具有与所述预留区120相同的形状，且所述挡膜对齐所述预留区120并抵接于所述预留区120，所述挡膜挡设于所述第二通孔121。这样，在蒸镀时，挡膜能够将预留区120的有机材料隔离，避免有机材料穿过第二通孔121，进而使得蒸镀效果更佳。
在一个实施例中，各所述第一通孔111呈矩形阵列设置，各所述第二通孔121呈矩形阵列设置，所述第二通孔121的行间距与所述第一通孔111的行间距相等，所述第二通孔121的列间距与所述第一通孔111的列间距相等，且至少部分所述第二通孔121与所述第一所述通孔对齐设置。
应该理解的是，由于预留区120形状与有效蒸镀区110形状相异，因此，预留区120中并不是每一行第二通孔121均与有效蒸镀区110的一行第一通孔111对齐，也并不是每一列第二通孔121均与有效蒸镀区110的一列第一 通孔111对齐，因此，预留区120至少部分的第二通孔121与有效蒸镀区110的第一通孔111对齐，例如，至少一行所述第二通孔121与一行所述第一通孔111对齐，例如，至少一列所述第二通孔121与一行所述第一通孔111对齐，也就是说，预留区120内的与第一通孔111对应的部分第二通孔121，每一行对齐一行第一通孔111，每一列对齐一列第一通孔111。
具体地，本实施例中，各第一通孔111呈若干行和若干列排列设置，且相邻两行的第一通孔111之间的行间距相等，相邻两列的第一通孔111之间的列间距相等；各第二通孔121呈若干行和若干列排列设置，且第二通孔121的行间距与第一通孔111的行间距相等，第二通孔121的列间距与第一通孔111的列间距相等，并且对于部分与第一通孔111对齐的第二通孔121来说，每一行第二通孔121与一行第一通孔111对齐，每一列第二通孔121与一列第一通孔111对齐，这样，使得预留区120的第二通孔121的分布结构与有效蒸镀区110的第一通孔111的分布结构相同，使得预留区120与有效蒸镀区110具有相同的结构，使得预留区120具有与有效蒸镀区110具有相同的力学性能，进一步使得蒸镀效果更佳。
在一个实施例中，所述第一通孔111的行间距与列间距相等，即第一通孔111的行间距等于第一通孔111的列间距，本实施例中有效蒸镀区110内的第一通孔111在横方向上以及纵方向上均等距设置，例如，第二通孔121的行间距与列间距相等，例如，第二通孔121的行间距等于第二通孔121的列间距，预留区120的第二通孔121同样在横方向上以及纵方向上均等距设置，使得预留区120和有效蒸镀区110上的开孔距离相等，有利于进一步避免掩膜板10在张网力的影响下产生褶皱，进一步使得蒸镀效果更佳。
应该理解的是，通过有效蒸镀区110蒸镀形成的像素区域对应的显示屏的显示区域，不同的显示屏具有不同的形状，例如，手机的显示屏可以为方形，或者为矩形，而电子表或者智能表上的显示屏则可以是矩形或者是圆形，而对于摄像头等传感器设置在显示面板上的显示屏，显示屏可以是不规则形状，为了适应不同的显示屏需求，在一个实施例中，所述有效蒸镀区110的 形状为方形，例如，所述预留区120的形状为口字型，口字型的预留区120包围所述方形的有效蒸镀区110，这样，通过该有效蒸镀区110蒸镀后在基板上形成方形的像素区域，则对应的显示屏的显示区域为方形。
在一个实施例中，所述有效蒸镀区110的形状为圆形。例如，所述预留区120的形状为圆环形，圆环形的预留区120包围所述圆形的有效蒸镀区110，这样，通过该有效蒸镀区110蒸镀后在基板上形成圆形的像素区域，则对应的显示屏的显示区域为圆形。
在一个实施例中，所述有效蒸镀区110的形状为不规则形状。例如，所述预留区120为中部空心的不规则形状，且所述预留区120的形状与所述有效蒸镀区110的形状匹配，该预留区120包围所述不规则形状的有效蒸镀区110，这样，通过该有效蒸镀区110蒸镀后在基板上形成不规则形状的像素区域，则对应的显示屏的显示区域为不规则形状。
这样，通过上述实施例，即可实现对不同显示屏的生产需求。
为了提高掩膜板10的蒸镀精度，例如，第一通孔111的位置精度小于10μm，例如，所述第一通孔111的宽度大于或等于20μm，例如，所述第一通孔111的宽度小于或等于30μm。例如，第二通孔121的位置精度小于10μm，例如，所述第二通孔121的宽度大于或等于20μm，例如，所述第二通孔121的宽度小于或等于30μm。
在一个实施例中，所述第二通孔121贯穿所述预留区120的两个相对的表面，即该第二通孔121为通透孔，该第二通孔121的两端通透，这样，使得第二通孔121的结构与第一通孔111的结构相同，使得预留区120具有与有效蒸镀区110具有相同的力学性能，使得预留区120和有效蒸镀区110之间不容易产生褶皱，有效避免像素混色，使得蒸镀效果更佳。
应该理解的是，掩膜板10上的通孔可通过蚀刻形成，在蒸镀过程中，为了避免有机材料从第二通孔121中穿透至基板，在一个实施例中，所述第二通孔121为非通透孔，例如，第二通孔121内设置有挡止薄膜，本实施例中，第二通孔121的两端并不通透，具体地，在对掩膜板10进行蚀刻时，在预留 区120上进行半蚀刻形成第二通孔121，对有效蒸镀区110进行完全蚀刻形成第一通孔111，也就是说，在预留区120蚀刻时，第二通孔121内蚀刻形成挡止薄膜，使得第二通孔121两端不通透，这样，由于预留区120设置有与有效蒸镀区110的第一通孔111相同形状尺寸的第二通孔121，因此，预留区120具有与有效蒸镀区110相同的力学性能，有效避免产生褶皱，而由于第二通孔121并不是通透的，能够有效避免蒸发后的有机材料通过，因此，能够避免在预留区120对应基板上的位置上蒸镀有机材料，进而使得蒸镀效果更佳。
应该理解的是，为了蒸镀形成不同的像素图案，第一通孔111可以是圆形孔、方形孔或者多边形孔，在一个实施例中，所述第一通孔111和所述第二通孔121分别具有圆形截面，且所述第一通孔111的孔径和所述第二通孔121的孔径相等。例如，所述第一通孔111和所述第二通孔121的横截面分别为圆形，例如，所述第一通孔111和所述第二通孔121分别为圆形孔。
在一个实施例中，所述第一通孔111和所述第二通孔121分别具有方形截面，且所述第一通孔111的宽度和所述第二通孔121的宽度相等。例如，所述第一通孔111和所述第二通孔121的横截面分别为方形，例如，所述第一通孔111和所述第二通孔121分别为方形孔。
在一个实施例中，所述第一通孔111和所述第二通孔121分别具有多边形截面，且所述第一通孔111的宽度和所述第二通孔121的宽度相等。例如，所述第一通孔111和所述第二通孔121的横截面分别为多边形，例如，所述第一通孔111和所述第二通孔121分别为多边形孔。
这样，第一通孔111为圆形孔、方形孔或者多边形孔，在其他实施例中，还可以是不规则形状的通孔，本实施例中不累赘描述，这样，能够适应不同的像素图案的蒸镀需求，此外，由于第二通孔121与第一通孔111具有相同形状，使得预留区120和有效蒸镀区110具有相同的应力特性，使得预留区120和有效蒸镀区110在张网力的影响下也不容易产生褶皱，有效避免像素混色，使得蒸镀效果更佳。
值得一提的是，该有效蒸镀区可以是多个，例如，有效蒸镀区为两个，两个有效蒸镀区相邻设置，而预留区设置于两个有效蒸镀区的外侧以及两个有效蒸镀区之间。又如，有效蒸镀区为三个，又如，有效蒸镀区为四个。对于多个有效蒸镀区的实现方式，本实施例中不累赘描述，该有效蒸镀区的数量可根据显示屏的显示需求在掩膜板上蚀刻形成，而预留区则设置与有效蒸镀区的第一通孔的形状、尺寸、间距相同的第二通孔，以使得预留区和有效蒸镀区具有相同的应力特性。
上述各实施例中，整个掩膜板整体开设通孔，而与传统的掩膜板仅在有效蒸镀区开设像素孔不同。整个掩膜板的有效蒸镀区部分的像素开孔与非有效区(预留区)的像素开孔形状一致，且整个掩膜板全部布满通孔，使得高精度精细掩膜板整体的通孔的分布比较均匀，从而使得掩膜板在有效蒸镀区以及预留区整体力学性能一致，比如有效蒸镀区与预留区在弹性模量以及剪切模量上具有相同的性能参数，从而使得高精度精细掩膜板在张网力的作用下变形一致，避免了高精度精细掩膜板产生褶皱，减少产品发光像素混色。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (20)

  1. 一种掩膜板，包括：预留区和至少一个有效蒸镀区，所述预留区设置于所述有效蒸镀区的外侧；
    所述至少一个有效蒸镀区开设有若干第一通孔；
    所述预留区开设有若干第二通孔，所述第二通孔的形状与所述第一通孔的形状相同，且所述第二通孔的尺寸与所述第一通孔的尺寸相等，且所述第二通孔之间的间距与所述第一通孔之间的间距相等。
  2. 根据权利要求1所述的掩膜板，各所述第一通孔呈矩形阵列设置，各所述第二通孔呈矩形阵列设置，所述第二通孔的行间距与所述第一通孔的行间距相等，所述第二通孔的列间距与所述第一通孔的列间距相等，且至少部分所述第二通孔与所述第一所述通孔对齐设置。
  3. 根据权利要求2所述的掩膜板，所述第一通孔的行间距与列间距相等。
  4. 根据权利要求1所述的掩膜板，所述有效蒸镀区的形状为方形。
  5. 根据权利要求2所述的掩膜板，所述有效蒸镀区的形状为方形。
  6. 根据权利要求3所述的掩膜板，所述有效蒸镀区的形状为方形。
  7. 根据权利要求1所述的掩膜板，所述有效蒸镀区的形状为圆形。
  8. 根据权利要求2所述的掩膜板，所述有效蒸镀区的形状为圆形。
  9. 根据权利要求3所述的掩膜板，所述有效蒸镀区的形状为圆形。
  10. 根据权利要求1所述的掩膜板，所述有效蒸镀区的形状为不规则形状。
  11. 根据权利要求2所述的掩膜板，所述有效蒸镀区的形状为不规则形状。
  12. 根据权利要求3所述的掩膜板，所述有效蒸镀区的形状为不规则形状。
  13. 根据权利要求1所述的掩膜板，所述第二通孔贯穿所述预留区的两个相对的表面。
  14. 根据权利要求2所述的掩膜板，所述第二通孔贯穿所述预留区的两 个相对的表面。
  15. 根据权利要求3所述的掩膜板，所述第二通孔贯穿所述预留区的两个相对的表面。
  16. 根据权利要求1所述的掩膜板，所述第一通孔和所述第二通孔分别具有圆形截面，且所述第一通孔的孔径和所述第二通孔的孔径相等。
  17. 根据权利要求2所述的掩膜板，所述第一通孔和所述第二通孔分别具有圆形截面，且所述第一通孔的孔径和所述第二通孔的孔径相等。
  18. 根据权利要求1所述的掩膜板，所述第一通孔和所述第二通孔分别具有方形截面，且所述第一通孔的宽度和所述第二通孔的宽度相等。
  19. 根据权利要求1所述的掩膜板，所述第一通孔和所述第二通孔分别具有多边形截面，且所述第一通孔的宽度和所述第二通孔的宽度相等。
  20. 根据权利要求1所述的掩膜板，各所述第一通孔呈矩形阵列设置，各所述第二通孔呈矩形阵列设置，所述第二通孔的行间距与所述第一通孔的行间距相等，所述第二通孔的列间距与所述第一通孔的列间距相等，且至少部分所述第二通孔与所述第一所述通孔对齐设置，所述第一通孔的行间距与列间距相等，所述有效蒸镀区的形状为方形，所述第二通孔贯穿所述预留区的两个相对的表面，所述第一通孔和所述第二通孔分别具有圆形截面，且所述第一通孔的孔径和所述第二通孔的孔径相等。
PCT/CN2018/111670 2017-10-25 2018-10-24 掩膜板 WO2019080875A1 (zh)

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CN108642440B (zh) * 2018-05-14 2019-09-17 昆山国显光电有限公司 掩膜板及掩膜组件
CN110396660B (zh) * 2019-08-30 2021-10-08 昆山国显光电有限公司 掩膜板及掩膜板制备方法
WO2021046807A1 (zh) * 2019-09-12 2021-03-18 京东方科技集团股份有限公司 掩膜装置及其制造方法、蒸镀方法、显示装置

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