WO2019178030A1 - Plasma etching chemistries of high aspect ratio features in dielectrics - Google Patents

Plasma etching chemistries of high aspect ratio features in dielectrics Download PDF

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Publication number
WO2019178030A1
WO2019178030A1 PCT/US2019/021761 US2019021761W WO2019178030A1 WO 2019178030 A1 WO2019178030 A1 WO 2019178030A1 US 2019021761 W US2019021761 W US 2019021761W WO 2019178030 A1 WO2019178030 A1 WO 2019178030A1
Authority
WO
WIPO (PCT)
Prior art keywords
etch
recited
stack
etching
etch gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2019/021761
Other languages
English (en)
French (fr)
Inventor
Keren J. KANARIK
Samantha Siam-Hwa TAN
Yang Pan
Jeffrey Marks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US16/979,372 priority Critical patent/US11594429B2/en
Priority to KR1020247008302A priority patent/KR20240037371A/ko
Priority to KR1020247008294A priority patent/KR20240037369A/ko
Priority to KR1020247008299A priority patent/KR20240037370A/ko
Priority to CN202410561129.3A priority patent/CN118588550A/zh
Priority to CN202410561073.1A priority patent/CN118588549A/zh
Priority to CN202410561177.2A priority patent/CN118588551A/zh
Priority to JP2020547224A priority patent/JP7366918B2/ja
Priority to CN201980019733.0A priority patent/CN111886678B/zh
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to KR1020207029723A priority patent/KR20200123481A/ko
Priority to CN202410212576.8A priority patent/CN118263107A/zh
Priority to CN202410560920.2A priority patent/CN118588548A/zh
Priority to KR1020247005584A priority patent/KR20240027863A/ko
Priority to KR1020247008297A priority patent/KR20240039207A/ko
Publication of WO2019178030A1 publication Critical patent/WO2019178030A1/en
Anticipated expiration legal-status Critical
Priority to US18/163,522 priority patent/US12119243B2/en
Priority to JP2023175617A priority patent/JP7626818B2/ja
Priority to US18/431,669 priority patent/US20240178014A1/en
Priority to JP2024016041A priority patent/JP7854461B2/ja
Priority to US18/592,994 priority patent/US12550660B2/en
Priority to US18/593,286 priority patent/US20240258128A1/en
Priority to US18/592,853 priority patent/US20240258127A1/en
Priority to US18/593,113 priority patent/US20240203760A1/en
Priority to JP2024036439A priority patent/JP7775354B2/ja
Priority to JP2024036441A priority patent/JP7775355B2/ja
Priority to JP2024036438A priority patent/JP7775353B2/ja
Priority to JP2024036440A priority patent/JP7787928B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Definitions

  • FIG. 2 is a schematic view of an etch reactor 200 that may be used in an embodiment.
  • an etch reactor 200 comprises a gas distribution plate 206 providing a gas inlet and an electrostatic chuck (ESC) 208, within an etch chamber 209, enclosed by a chamber wall 252.
  • a stack 204 is positioned over the ESC 208.
  • the ESC 208 may provide a bias from the ESC source 248.
  • An etch gas source 210 is connected to the etch chamber 209 through the gas distribution plate 206.
  • An ESC temperature controller 250 is connected to a chiller 214, which chills a coolant 215.

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • ing And Chemical Polishing (AREA)
PCT/US2019/021761 2018-03-16 2019-03-12 Plasma etching chemistries of high aspect ratio features in dielectrics Ceased WO2019178030A1 (en)

Priority Applications (26)

Application Number Priority Date Filing Date Title
KR1020247008297A KR20240039207A (ko) 2018-03-16 2019-03-12 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
KR1020247008294A KR20240037369A (ko) 2018-03-16 2019-03-12 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
KR1020247008299A KR20240037370A (ko) 2018-03-16 2019-03-12 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
CN202410561129.3A CN118588550A (zh) 2018-03-16 2019-03-12 在电介质中的高深宽比特征的等离子体蚀刻化学过程
CN202410561073.1A CN118588549A (zh) 2018-03-16 2019-03-12 在电介质中的高深宽比特征的等离子体蚀刻化学过程
CN202410561177.2A CN118588551A (zh) 2018-03-16 2019-03-12 在电介质中的高深宽比特征的等离子体蚀刻化学过程
JP2020547224A JP7366918B2 (ja) 2018-03-16 2019-03-12 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
CN201980019733.0A CN111886678B (zh) 2018-03-16 2019-03-12 在电介质中的高深宽比特征的等离子体蚀刻化学过程
KR1020247008302A KR20240037371A (ko) 2018-03-16 2019-03-12 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
KR1020207029723A KR20200123481A (ko) 2018-03-16 2019-03-12 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
CN202410212576.8A CN118263107A (zh) 2018-03-16 2019-03-12 在电介质中的高深宽比特征的等离子体蚀刻化学过程
CN202410560920.2A CN118588548A (zh) 2018-03-16 2019-03-12 在电介质中的高深宽比特征的等离子体蚀刻化学过程
KR1020247005584A KR20240027863A (ko) 2018-03-16 2019-03-12 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
US16/979,372 US11594429B2 (en) 2018-03-16 2019-03-12 Plasma etching chemistries of high aspect ratio features in dielectrics
US18/163,522 US12119243B2 (en) 2018-03-16 2023-02-02 Plasma etching chemistries of high aspect ratio features in dielectrics
JP2023175617A JP7626818B2 (ja) 2018-03-16 2023-10-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
US18/431,669 US20240178014A1 (en) 2018-03-16 2024-02-02 Plasma etching chemistries of high aspect ratio features in dielectrics
JP2024016041A JP7854461B2 (ja) 2018-03-16 2024-02-06 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
US18/592,994 US12550660B2 (en) 2018-03-16 2024-03-01 Plasma etching chemistries of high aspect ratio features in dielectrics
US18/593,113 US20240203760A1 (en) 2018-03-16 2024-03-01 Plasma etching chemistries of high aspect ratio features in dielectrics
US18/593,286 US20240258128A1 (en) 2018-03-16 2024-03-01 Plasma etching chemistries of high aspect ratio features in dielectrics
US18/592,853 US20240258127A1 (en) 2018-03-16 2024-03-01 Plasma etching chemistries of high aspect ratio features in dielectrics
JP2024036439A JP7775354B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036441A JP7775355B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036438A JP7775353B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036440A JP7787928B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862644095P 2018-03-16 2018-03-16
US62/644,095 2018-03-16

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US16/979,372 A-371-Of-International US11594429B2 (en) 2018-03-16 2019-03-12 Plasma etching chemistries of high aspect ratio features in dielectrics
US18/163,522 Continuation US12119243B2 (en) 2018-03-16 2023-02-02 Plasma etching chemistries of high aspect ratio features in dielectrics

Publications (1)

Publication Number Publication Date
WO2019178030A1 true WO2019178030A1 (en) 2019-09-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2019/021761 Ceased WO2019178030A1 (en) 2018-03-16 2019-03-12 Plasma etching chemistries of high aspect ratio features in dielectrics

Country Status (5)

Country Link
US (7) US11594429B2 (https=)
JP (6) JP7366918B2 (https=)
KR (6) KR20240037371A (https=)
CN (6) CN118263107A (https=)
WO (1) WO2019178030A1 (https=)

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KR20210027099A (ko) * 2019-08-28 2021-03-10 도쿄엘렉트론가부시키가이샤 에칭 처리 방법 및 에칭 처리 장치
KR20210056241A (ko) * 2019-11-08 2021-05-18 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치
KR20210057061A (ko) * 2019-11-08 2021-05-20 도쿄엘렉트론가부시키가이샤 에칭 방법
WO2021138006A1 (en) * 2019-12-31 2021-07-08 Mattson Technology, Inc. Systems and methods for removal of hardmask
US11127600B2 (en) * 2019-02-18 2021-09-21 Tokyo Electron Limited Etching method
JP2021153170A (ja) * 2019-11-08 2021-09-30 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2021207286A1 (en) * 2020-04-08 2021-10-14 Lam Research Corporation Selective etch using deposition of a metalloid or metal containing hardmask
JP2021166252A (ja) * 2020-04-07 2021-10-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN113594032A (zh) * 2020-04-30 2021-11-02 东京毅力科创株式会社 基板处理方法及等离子体处理装置
JP2022036899A (ja) * 2020-08-24 2022-03-08 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2022051045A1 (en) * 2020-09-03 2022-03-10 Applied Materials, Inc. Selective anisotropic metal etch
JP2022077710A (ja) * 2020-11-12 2022-05-24 東京エレクトロン株式会社 エッチング方法
WO2022132818A1 (en) * 2020-12-17 2022-06-23 Tokyo Electron Limited Selective etching with fluorine, oxygen and noble gas containing plasmas
CN114830299A (zh) * 2019-11-12 2022-07-29 应用材料公司 减少氢沉积工艺
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
JP2022172753A (ja) * 2021-05-07 2022-11-17 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2022552963A (ja) * 2019-10-18 2022-12-21 アプライド マテリアルズ インコーポレイテッド 撓み可能なプラテン及び関連する方法
JP2023505782A (ja) * 2019-12-13 2023-02-13 ラム リサーチ コーポレーション 反り制御とマスク選択比とのバランスを達成するための多状態パルス化
US20230135998A1 (en) * 2021-11-01 2023-05-04 Tokyo Electron Limited Plasma processing method and plasma processing system
JP2023063526A (ja) * 2021-04-28 2023-05-09 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2023101915A1 (en) * 2021-12-01 2023-06-08 Lam Research Corporation Selective etch using fluorocarbon-based deposition of a metalloid or metal
US11792987B2 (en) 2018-10-26 2023-10-17 Lam Research Corporation Self-aligned vertical integration of three-terminal memory devices
JP2024177528A (ja) * 2019-11-25 2024-12-19 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
US20240429063A1 (en) * 2021-11-16 2024-12-26 Lam Research Corporation Silicon etch with organochloride
US12406852B2 (en) 2021-01-21 2025-09-02 Lam Research Corporation Profile optimization for high aspect ratio memory using an etch front metal catalyst

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US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
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