JP7366918B2 - 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 - Google Patents

誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 Download PDF

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JP7366918B2
JP7366918B2 JP2020547224A JP2020547224A JP7366918B2 JP 7366918 B2 JP7366918 B2 JP 7366918B2 JP 2020547224 A JP2020547224 A JP 2020547224A JP 2020547224 A JP2020547224 A JP 2020547224A JP 7366918 B2 JP7366918 B2 JP 7366918B2
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etching
stack
etching gas
gas
plasma
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JP2021515988A5 (https=
JPWO2019178030A5 (https=
JP2021515988A (ja
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カナリク・ケレン・ジェイ．
タン・サマンサ・シャム－ファ
パン・ヤン
マークス・ジェフリー
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Lam Research Corp
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Lam Research Corp
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Priority to JP2024036439A priority patent/JP7775354B2/ja
Priority to JP2024036440A priority patent/JP7787928B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • ing And Chemical Polishing (AREA)
JP2020547224A 2018-03-16 2019-03-12 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 Active JP7366918B2 (ja)

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Application Number Priority Date Filing Date Title
JP2023175617A JP7626818B2 (ja) 2018-03-16 2023-10-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024016041A JP7854461B2 (ja) 2018-03-16 2024-02-06 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036441A JP7775355B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036440A JP7787928B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036439A JP7775354B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036438A JP7775353B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質

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US201862644095P 2018-03-16 2018-03-16
US62/644,095 2018-03-16
PCT/US2019/021761 WO2019178030A1 (en) 2018-03-16 2019-03-12 Plasma etching chemistries of high aspect ratio features in dielectrics

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JP2021515988A JP2021515988A (ja) 2021-06-24
JP2021515988A5 JP2021515988A5 (https=) 2022-03-11
JPWO2019178030A5 JPWO2019178030A5 (https=) 2022-03-11
JP7366918B2 true JP7366918B2 (ja) 2023-10-23

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JP2023175617A Active JP7626818B2 (ja) 2018-03-16 2023-10-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036441A Active JP7775355B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036440A Active JP7787928B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036439A Active JP7775354B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036438A Active JP7775353B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質

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JP2024036441A Active JP7775355B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036440A Active JP7787928B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036439A Active JP7775354B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
JP2024036438A Active JP7775353B2 (ja) 2018-03-16 2024-03-11 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質

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Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
JP7366918B2 (ja) 2018-03-16 2023-10-23 ラム リサーチ コーポレーション 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
TWI887009B (zh) 2018-10-26 2025-06-11 美商蘭姆研究公司 三端子記憶體元件的自對準垂直集成
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
JP7390134B2 (ja) * 2019-08-28 2023-12-01 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
US11302536B2 (en) * 2019-10-18 2022-04-12 Applied Materials, Inc. Deflectable platens and associated methods
SG10202010798QA (en) * 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus
JP7343461B2 (ja) * 2019-11-08 2023-09-12 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
WO2021090798A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
WO2021096914A1 (en) * 2019-11-12 2021-05-20 Applied Materials, Inc. Reduced hydrogen deposition processes
JP7604145B2 (ja) * 2019-11-25 2024-12-23 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
US11342194B2 (en) * 2019-11-25 2022-05-24 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
WO2021118862A2 (en) * 2019-12-13 2021-06-17 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
CN115039209A (zh) * 2019-12-31 2022-09-09 玛特森技术公司 用于硬掩模去除的系统和方法
KR102668527B1 (ko) * 2022-03-24 2024-05-23 성균관대학교산학협력단 소모성 금속 부재를 포함하는 식각용 플라즈마 처리 장치
JP7296912B2 (ja) * 2020-04-07 2023-06-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20220166316A (ko) * 2020-04-08 2022-12-16 램 리써치 코포레이션 준금속 (metalloid) 또는 금속 함유 하드마스크의 증착을 사용한 선택적인 에칭
KR102459129B1 (ko) * 2020-04-30 2022-10-26 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 플라즈마 처리 장치
TWI899193B (zh) * 2020-04-30 2025-10-01 日商東京威力科創股份有限公司 基板處理方法及電漿處理裝置
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
TWI893186B (zh) * 2020-08-24 2025-08-11 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
JP7715462B2 (ja) * 2020-08-24 2025-07-30 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11658043B2 (en) 2020-09-03 2023-05-23 Applied Materials, Inc. Selective anisotropic metal etch
JP7565194B2 (ja) * 2020-11-12 2024-10-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12131914B2 (en) * 2020-12-17 2024-10-29 Tokyo Electron Limited Selective etching with fluorine, oxygen and noble gas containing plasmas
CN114695107B (zh) * 2020-12-30 2025-08-08 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀方法
KR102944730B1 (ko) 2021-01-21 2026-03-26 램 리써치 코포레이션 에칭 프론트 금속 촉매를 사용하는 고 종횡비 메모리를 위한 프로파일 최적화
WO2022163182A1 (ja) * 2021-01-27 2022-08-04 昭和電工株式会社 金属酸化物のパターン形成方法及び半導体素子の製造方法
JP7577012B2 (ja) * 2021-03-26 2024-11-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11764215B2 (en) 2021-03-31 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture
CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法
JP7767024B2 (ja) * 2021-05-07 2025-11-11 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2024521260A (ja) * 2021-05-25 2024-05-30 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の高アスペクト比エッチングのための化学物質
CN114121644B (zh) * 2021-09-30 2026-03-24 北京北方华创微电子装备有限公司 一种碳化硅沟槽结构及其制造方法和半导体器件
KR20230052079A (ko) 2021-10-12 2023-04-19 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP7674223B2 (ja) * 2021-11-01 2025-05-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP2024537515A (ja) * 2021-11-03 2024-10-10 ラム リサーチ コーポレーション 高アスペクト比プラズマエッチングにおける金属含有表面の修正
KR20240100436A (ko) * 2021-11-16 2024-07-01 램 리써치 코포레이션 유기 클로라이드를 사용한 실리콘 에칭
WO2023101915A1 (en) * 2021-12-01 2023-06-08 Lam Research Corporation Selective etch using fluorocarbon-based deposition of a metalloid or metal
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR20230111394A (ko) 2022-01-18 2023-07-25 삼성전자주식회사 저온 식각용 공정 가스, 플라즈마 식각 장치, 및 이들을 이용한 반도체 소자의 제조 방법
JP7257088B1 (ja) * 2022-03-24 2023-04-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
WO2023215385A1 (en) * 2022-05-05 2023-11-09 Lam Research Corporation Organochloride etch with passivation and profile control
KR20230162551A (ko) * 2022-05-20 2023-11-28 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 시스템
KR102938468B1 (ko) 2022-06-21 2026-03-11 세메스 주식회사 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법
US20240112919A1 (en) * 2022-09-29 2024-04-04 Tokyo Electron Limited Low-Temperature Etch
CN117810077A (zh) * 2022-09-29 2024-04-02 中微半导体设备(上海)股份有限公司 一种基片的刻蚀方法及其半导体器件
JP2024053900A (ja) * 2022-10-04 2024-04-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12469715B2 (en) * 2022-10-13 2025-11-11 Applied Materials, Inc. Dry etching with etch byproduct self-cleaning
CN115818580B (zh) * 2022-11-28 2024-07-26 华中科技大学 用介质阻挡放电等离子体来制备纳米硫材料的方法及产品
US20240347346A1 (en) * 2023-04-14 2024-10-17 Tokyo Electron Limited Semiconductor devices and methods of manufacturing the same
WO2024263467A1 (en) * 2023-06-23 2024-12-26 Lam Research Corporation Selective etch of a stack with a carbon containing mask
CN119340234A (zh) * 2023-07-20 2025-01-21 中微半导体设备(上海)股份有限公司 用于等离子体刻蚀的气体、气体组合、刻蚀方法及设备
US12575353B2 (en) * 2023-07-31 2026-03-10 Tokyo Electron Limited Method for lateral etch with bottom passivation
WO2025075828A1 (en) * 2023-10-05 2025-04-10 Lam Research Corporation Selective etch of stack below metal mask using oxygen and fluorine
US20250149337A1 (en) * 2023-11-07 2025-05-08 Applied Materials, Inc. High selectivity cryogenic tungsten-boron-carbide etch
WO2025106306A1 (en) * 2023-11-17 2025-05-22 Lam Research Corporation Selective etch of stack using hf and another fluorine containing component
US20260096364A1 (en) * 2024-09-27 2026-04-02 Tokyo Electron Limited Low-temperature etching of carbon-containing layers

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007110112A (ja) 2005-10-12 2007-04-26 Samsung Electronics Co Ltd 炭素含有膜エッチング方法及びこれを利用した半導体素子の製造方法
JP2014532988A (ja) 2011-10-27 2014-12-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低ｋ及びその他の誘電体膜をエッチングするための処理チャンバ
JP2017050529A (ja) 2015-08-12 2017-03-09 セントラル硝子株式会社 ドライエッチング方法
JP2017163032A (ja) 2016-03-10 2017-09-14 東芝メモリ株式会社 半導体装置の製造方法
JP2017220649A (ja) 2016-06-10 2017-12-14 東京エレクトロン株式会社 エッチング処理方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2669460B2 (ja) * 1986-10-29 1997-10-27 株式会社日立製作所 エツチング方法
US5643473A (en) * 1987-07-31 1997-07-01 Hitachi, Ltd. Dry etching method
US5147500A (en) * 1987-07-31 1992-09-15 Hitachi, Ltd. Dry etching method
JP2650970B2 (ja) * 1987-07-31 1997-09-10 株式会社日立製作所 ドライエッチング方法
JPH06326060A (ja) * 1993-05-12 1994-11-25 Hitachi Ltd 固体表面加工方法
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
JP5041696B2 (ja) 2005-11-15 2012-10-03 パナソニック株式会社 ドライエッチング方法
US20070232070A1 (en) * 2006-03-31 2007-10-04 Stephan Wege Method and device for depositing a protective layer during an etching procedure
JP5913830B2 (ja) 2011-04-21 2016-04-27 株式会社アルバック シリコン基板のエッチング方法
JP6056136B2 (ja) * 2011-09-07 2017-01-11 セントラル硝子株式会社 ドライエッチング方法
TWI642809B (zh) 2013-09-09 2018-12-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用蝕刻氣體蝕刻半導體結構的方法
TWI695423B (zh) 2014-06-18 2020-06-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於tsv/mems/功率元件蝕刻的化學物質
US9299580B2 (en) * 2014-08-19 2016-03-29 Applied Materials, Inc. High aspect ratio plasma etch for 3D NAND semiconductor applications
US9728422B2 (en) * 2015-01-23 2017-08-08 Central Glass Company, Limited Dry etching method
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
JP6604833B2 (ja) 2015-12-03 2019-11-13 東京エレクトロン株式会社 プラズマエッチング方法
JP6604911B2 (ja) 2016-06-23 2019-11-13 東京エレクトロン株式会社 エッチング処理方法
US10692880B2 (en) * 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10903109B2 (en) * 2017-12-29 2021-01-26 Micron Technology, Inc. Methods of forming high aspect ratio openings and methods of forming high aspect ratio features
US10361092B1 (en) * 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
JP7366918B2 (ja) 2018-03-16 2023-10-23 ラム リサーチ コーポレーション 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
TWI893186B (zh) 2020-08-24 2025-08-11 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007110112A (ja) 2005-10-12 2007-04-26 Samsung Electronics Co Ltd 炭素含有膜エッチング方法及びこれを利用した半導体素子の製造方法
JP2014532988A (ja) 2011-10-27 2014-12-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低ｋ及びその他の誘電体膜をエッチングするための処理チャンバ
JP2017050529A (ja) 2015-08-12 2017-03-09 セントラル硝子株式会社 ドライエッチング方法
JP2017163032A (ja) 2016-03-10 2017-09-14 東芝メモリ株式会社 半導体装置の製造方法
JP2017220649A (ja) 2016-06-10 2017-12-14 東京エレクトロン株式会社 エッチング処理方法

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