WO2019138881A1 - 洗浄装置、洗浄方法及びコンピュータ記憶媒体 - Google Patents

洗浄装置、洗浄方法及びコンピュータ記憶媒体 Download PDF

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Publication number
WO2019138881A1
WO2019138881A1 PCT/JP2018/047860 JP2018047860W WO2019138881A1 WO 2019138881 A1 WO2019138881 A1 WO 2019138881A1 JP 2018047860 W JP2018047860 W JP 2018047860W WO 2019138881 A1 WO2019138881 A1 WO 2019138881A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
tool
rotating body
wafer
substrate
Prior art date
Application number
PCT/JP2018/047860
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
宗久 児玉
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to KR1020207021993A priority Critical patent/KR102629528B1/ko
Priority to JP2019564624A priority patent/JP6990720B2/ja
Priority to CN201880085394.1A priority patent/CN111566784B/zh
Publication of WO2019138881A1 publication Critical patent/WO2019138881A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

  • the present invention relates to a cleaning apparatus for cleaning an object to be processed, a cleaning method using the cleaning apparatus, and a computer storage medium.
  • the back surface of a wafer may be ground to thin the wafer with respect to a semiconductor wafer (hereinafter referred to as a wafer) on which devices such as a plurality of electronic circuits are formed on the surface. It has been done.
  • Grinding of the back surface of the wafer is performed using a grinding apparatus (processing apparatus) described in, for example, Patent Documents 1 to 3.
  • the grinding apparatus is provided with cleaning means for cleaning the surface of the wafer, the suction surface of the wafer on the transfer pad for transferring the wafer, and the like.
  • Patent Document 1 as a means for cleaning the surface of a wafer, a cleaning brush mechanism that abuts a brush on the surface of the wafer to clean the surface and a cleaning brush mechanism abuts the surface of the wafer.
  • a cleaning means comprising a brush cleaning solution supply mechanism for supplying a cleaning solution to the surface.
  • Patent Document 2 also discloses a brush cleaning apparatus that cleans the surface by bringing a brush into contact with the surface of the wafer as a means for cleaning the surface of the wafer.
  • Patent Document 3 discloses a washing means provided with a cleaning brush that is in contact with the suction surface to wash the suction surface.
  • Patent Documents 1 to 3 described above each cleans either the surface of the wafer or the suction surface of the transfer pad, there are cases where both of them may be cleaned by the grinding apparatus. , And multiple cleaning means are required. Further, there are also cases where either the surface of the wafer or the suction surface of the transfer pad is cleaned by a plurality of cleaning means. And, when a plurality of cleaning means are provided in the grinding apparatus as described above, a space for installing these cleaning means is required, but it is not considered to secure such a space in the conventional grinding apparatus. Therefore, there is room for improvement in the conventional grinding apparatus.
  • the present invention has been made in view of the above circumstances, and it is an object of the present invention to achieve space saving of a cleaning device provided with a plurality of cleaning tools when cleaning an object to be processed using a plurality of cleaning tools. Do.
  • One aspect of the present invention which solves the above-mentioned subject is a washing device which washes a processed object, and is provided in the rotating body which rotates centering on the diameter direction of the washing side of the processed object as a central axis, And a plurality of cleaning tools for cleaning the cleaning surface, wherein the plurality of cleaning tools extend in the axial direction on the surface of the rotating body and are arranged side by side in the circumferential direction of the rotating body.
  • Another aspect of the present invention is a cleaning method for cleaning an object to be treated, comprising: a rotating body rotating around a radial direction of a cleaning surface of the object to be treated; and an axis on the surface of the rotating body A cleaning tool selected from among the plurality of cleaning tools according to the object to be treated, using a cleaning device provided with a plurality of cleaning tools extending in a direction and arranged in a circumferential direction of the rotating body Then, the rotating body is rotated to place the one cleaning tool opposite to the cleaning surface, and the one cleaning tool is used to clean the cleaning surface.
  • a readable computer storage medium storing a program operating on a computer of a control unit that controls the cleaning device to cause the cleaning device to execute the cleaning method. It is.
  • a cleaning device provided with the plurality of cleaning tools Space saving can be realized.
  • FIG. 1 is a plan view schematically showing the outline of the configuration of a substrate processing system 1.
  • the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to one another are defined, and the Z-axis positive direction is the vertically upward direction.
  • the wafer W as a substrate shown in FIG. 2 is thinned.
  • the wafer W is, for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer.
  • a device (not shown) is formed on the surface W1 of the wafer W, and a protective material for protecting the device, for example, a protective tape P is attached to the surface W1.
  • predetermined processing such as grinding is performed on the back surface W2 of the wafer W to thin the wafer.
  • the substrate processing system 1 stores the wafer W before processing in the cassette C, and carries the plurality of wafers W into the substrate processing system 1 from the outside in cassette units from the outside, and the wafer W after processing in the cassette C And a processing apparatus 4 for processing and thinning the wafer W, and a post-processing wafer W.
  • It has a configuration in which a post-processing device 5 for performing processing and a transfer station 6 for transferring the wafer W among the loading station 2, the processing device 4 and the post-processing device 5 are connected.
  • the loading station 2, the transfer station 6, and the processing device 4 are arranged in this order in the Y-axis direction on the X-axis negative direction side.
  • the unloading station 3 and the post-processing device 5 are arranged side by side in this order in the Y-axis direction on the X-axis positive direction side.
  • a cassette mounting table 10 is provided at the loading station 2.
  • a plurality of, for example, two cassettes C can be mounted on the cassette mounting table 10 in a row in the X-axis direction.
  • the unloading station 3 also has the same configuration as the loading station 2.
  • a cassette mounting table 20 is provided at the unloading station 3, and for example, two cassettes C can be mounted on the cassette mounting table 20 in a row in the X-axis direction.
  • the loading station 2 and the unloading station 3 may be integrated into one loading and unloading station, and in such a case, the loading and unloading station is provided with a common cassette mounting table.
  • the processing apparatus 4 includes a rotary table 30, a conveyance unit 40, an alignment unit 50, a first cleaning unit 60, a second cleaning unit 70, a rough grinding unit 80, a middle grinding unit 90, and a finish grinding unit 100. There is.
  • the rotary table 30 is rotatably configured by a rotation mechanism (not shown).
  • a rotation mechanism not shown.
  • the chucks 31 are arranged uniformly on the same circumference as the rotary table 30, that is, every 90 degrees.
  • the four chucks 31 are movable to the delivery position A0 and the processing positions A1 to A3 by rotation of the rotary table 30.
  • the delivery position A0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the rotary table 30, and is provided inside the sink 33 on the Y-axis negative direction side of the delivery position A0.
  • the second cleaning unit 70, the alignment unit 50, and the first cleaning unit 60 are arranged side by side.
  • the alignment unit 50 and the first cleaning unit 60 are stacked and arranged in this order from above.
  • the first processing position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the rotary table 30, and the rough grinding unit 80 is disposed.
  • the second processing position A2 is a position on the X axis negative direction side and the Y axis positive direction side of the rotary table 30, and the middle grinding unit 90 is disposed.
  • the third processing position A3 is a position on the X axis negative direction side and the Y axis negative direction side of the rotary table 30, and the finish grinding unit 100 is disposed.
  • the chuck 31 is held by a chuck base 32.
  • the chuck 31 and the chuck base 32 are configured to be rotatable by a rotation mechanism (not shown).
  • the transfer unit 40 is an articulated robot including a plurality of, for example, three arms 41 to 43.
  • the three arms 41 to 43 are connected by joints (not shown), and by these joints, the first arm 41 and the second arm 42 are configured to be pivotable around their respective proximal ends.
  • a transfer pad 44 for holding the wafer W by suction is attached to the first arm 41 at the tip.
  • the transfer pad 44 has a circular shape with a diameter longer than the diameter of the wafer W in plan view, and adsorbs and holds the back surface W2 of the wafer W.
  • the transport pad 44 is configured to be rotatable by a rotating portion (not shown) provided to the first arm 41.
  • the third arm 43 at the base end is attached to a vertical movement mechanism 45 for moving the arms 41 to 43 in the vertical direction.
  • the transfer unit 40 having such a configuration can transfer the wafer W to the delivery position A0, the alignment unit 50, the first cleaning unit 60, and the second cleaning unit 70.
  • the second cleaning unit 70 constitutes the cleaning device in the present invention.
  • the alignment unit 50 adjusts the horizontal direction of the wafer W before the grinding process. For example, while the wafer W held by the spin chuck (not shown) is rotated, the position of the notch of the wafer W is detected by detecting the position of the notch of the wafer W by the detection unit (not shown). Adjust the horizontal orientation of W.
  • the back surface W2 of the wafer W after the grinding process is cleaned, more specifically, spin-cleaned.
  • the cleaning liquid is supplied from the cleaning liquid nozzle (not shown) to the back surface W2 of the wafer W. Then, the supplied cleaning liquid diffuses on the back surface W2, and the back surface W2 is cleaned.
  • the second cleaning unit 70 cleans the surface W1 of the wafer W in a state where the wafer W after the grinding processing is held by the transfer pad 44, that is, the protective tape P attached to the surface W1. The holding surface of the wafer W is cleaned.
  • the configuration of the second cleaning unit 70 will be described later.
  • the rough grinding unit 80 the back surface W2 of the wafer W is roughly ground.
  • the rough grinding unit 80 has a rough grinding portion 81 provided with a ring-shaped rotatable rough grinding wheel (not shown).
  • the rough grinding portion 81 is configured to be movable in the vertical direction and the horizontal direction along the support 82. Then, while the back surface W2 of the wafer W held by the chuck 31 is in contact with the rough grinding wheel, the chuck 31 and the rough grinding wheel are respectively rotated to roughly grind the back surface W2 of the wafer W.
  • the back surface W2 of the wafer W is middle ground.
  • the middle grinding unit 90 has a middle grinding portion 91 having an annular shape and a rotatable middle grinding wheel (not shown).
  • the middle grinding portion 91 is configured to be movable in the vertical direction and the horizontal direction along the support 92.
  • the grain size of the abrasive grains of the medium grinding wheel is smaller than the grain size of the abrasive grains of the rough grinding stone.
  • the back surface W2 of the wafer W is finish ground.
  • the finish grinding unit 100 has a finish grinding portion 101 provided with a ring-shaped rotatable finish grinding wheel (not shown).
  • the finish grinding unit 101 is configured to be movable in the vertical direction and the horizontal direction along the support 102.
  • the grain size of the abrasive grains of the finish grinding wheel is smaller than the grain size of the abrasive grains of the medium grinding wheel.
  • post-processing device In the post-processing apparatus 5, post-processing is performed on the wafer W processed by the processing apparatus 4. As the post-processing, for example, a mounting process of holding the wafer W on the dicing frame through the dicing tape, a peeling process of peeling the protective tape P attached to the wafer W, and the like are performed. Then, the post-processing apparatus 5 carries the post-processing and carries the wafer W held by the dicing frame to the cassette C of the unloading station 3. A known device is used for the mounting process and the peeling process performed by the post-processing device 5 respectively.
  • the transfer station 6 is provided with a wafer transfer area 110.
  • a wafer transfer apparatus 112 movable on the transfer path 111 extending in the X-axis direction is provided.
  • the wafer transfer apparatus 112 has a transfer fork 113 and a transfer pad 114 as a wafer holding unit for holding the wafer W.
  • the tip of the transfer fork 113 is branched into two, and the wafer W is held by suction.
  • the transfer fork 113 transfers the wafer W before the grinding process.
  • the transfer pad 114 has a circular shape with a diameter longer than that of the wafer W in plan view, and holds the wafer W by suction.
  • the transfer pad 114 transfers the wafer W after the grinding process.
  • the transfer fork 113 and the transfer pad 114 are configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis, respectively.
  • the substrate processing system 1 is provided with a control unit 120.
  • the control unit 120 is, for example, a computer and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1.
  • the program storage unit also stores a program for realizing the below-described wafer processing in the substrate processing system 1 by controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses.
  • the program is recorded on a computer readable storage medium H such as a computer readable hard disk (HD), a flexible disk (FD), a compact disc (CD), a magnet optical desk (MO), a memory card, etc. It may be one that has been installed in the control unit 120 from the storage medium H.
  • the second cleaning unit 70 has a processing container 200.
  • a transfer pad 44 of the transfer unit 40 and a loading / unloading port 201 to which the wafer W held by the transfer pad 44 is loaded and unloaded are formed.
  • the loading / unloading port 201 is provided with an open / close shutter (not shown).
  • the processing container 200 is a housing, but the shape of the processing container 200 is not limited to this.
  • the upper surface of the processing container 200 may be open, and the loading / unloading port 201 may be omitted. Further, the processing container 200 itself may be omitted.
  • the cleaning mechanism 210, the rotation mechanism 220, and the cleaning liquid tank 230, which will be described later, are respectively provided inside the sink 33.
  • a cleaning mechanism 210 for cleaning the surface W1 (protective tape P) of the wafer W and the holding surface 44a of the wafer W for the transfer pad 44, a rotation mechanism 220 for rotating the cleaning mechanism 210, and A cleaning solution tank 230 for storing the cleaning solution on the surface W1 is provided.
  • the wafer W and the transfer pad 44 constitute the object of the present invention
  • the surface W1 and the holding surface 44a constitute the cleaning surface of the present invention.
  • the cleaning mechanism 210 has a configuration in which a plurality of, for example, four cleaning tools 212 to 215 are attached to the surface of the rotating body 211.
  • the rotating body 211 rotates about the central axis in the radial direction (X-axis direction) of the surface W1 of the wafer W and the radial direction (X-axis direction) of the holding surface 44a of the transfer pad 44.
  • the rotating body 211 has, for example, a rectangular parallelepiped shape.
  • the cleaning mechanism 210 (rotary body 211) is attached to the rotating mechanism 220.
  • the rotation mechanism 220 is provided on a shaft 221 connected to both ends in the axial direction (X-axis direction) of the rotating body 211, a driving unit 222 provided on one shaft 221 for rotating the rotating body 211, and the other shaft 221 And a supporting portion 223 for supporting the rotating body 211.
  • the drive unit 222 incorporates, for example, an actuator (not shown), and can rotate the rotating body 211 via the shaft 221.
  • the four cleaning tools 212 to 215 are a sponge cleaning tool 212 as a substrate cleaning tool, an air cleaning tool 213 as a substrate drying tool, a stone cleaning tool 214 as a pad cleaning tool, and a pad cleaning tool.
  • the brush cleaner 215 of The cleaning tools 212 to 215 extend in the axial direction (X-axis direction) on the surface of the rotating body 211, respectively.
  • the cleaning tools 212 to 215 are provided on the four surfaces of the rotating body 211, that is, arranged in the circumferential direction of the rotating body 211.
  • the sponge cleaning tool 212 cleans the surface W1 (protective tape P) of the wafer W.
  • the sponge cleaner 212 has, for example, a sponge which is stretched longer than the diameter of the surface W1.
  • a cleaning solution for example, pure water, is supplied to the sponge cleaning tool 212 by a cleaning solution tank 230 shown in FIGS. 3 and 4. Then, the sponge includes the cleaning liquid, and the sponge cleaning tool 212 contacts the surface W1 of the wafer W while supplying the cleaning liquid to clean the surface W1.
  • the cleaning solution tank 230 is provided below the cleaning mechanism 210.
  • the cleaning solution tank 230 is connected to a liquid supply unit 231 that supplies the cleaning solution to the inside of the cleaning solution tank 230 and a drainage unit 232 that discharges the cleaning solution inside the cleaning solution tank 230. Then, while the cleaning liquid is supplied from the liquid supply unit 231, the cleaning liquid is discharged from the drainage section 232, and the cleaning liquid is constantly stored in the cleaning liquid tank 230.
  • the cleaning liquid may overflow from the upper surface of the cleaning liquid tank 230 and the cleaning liquid in the cleaning liquid tank 230 may be discharged at all times.
  • the cleaning solution tank 230 is configured to be able to move up and down by the lifting mechanism 233.
  • the cleaning fluid tank 230 and the rotating body 211 may be moved up and down relative to each other.
  • the rotating body 211 may be configured to be movable up and down.
  • both the cleaning fluid tank 230 and the rotating body 211 may be lifted and lowered. You may configure it.
  • the cleaning solution tank 230 and the rotating body 211 may be fixed. In such a case, it is possible to clean the object to be processed of the wafer W and the transfer pad 44 while always cleaning the cleaning tools 212 to 215 provided on the rotating body 211 by the cleaning solution stored in the cleaning solution tank 230.
  • the cleaning solution tank 230 is raised while the sponge cleaning tool 212 is positioned on the lower surface of the rotating body 211. Immerse in the cleaning solution. Thereby, the cleaning liquid is supplied to the sponge cleaning tool 212. Thereafter, the rotating body 211 is rotated, and the sponge cleaning tool 212 is brought into contact with the surface W1 of the wafer W in a state where the sponge cleaning tool 212 including the cleaning liquid is disposed on the upper surface of the rotating body 211. In this state, while the wafer W is rotated by the transfer pad 44, the sponge cleaning tool 212 is brought into contact with the surface W1 while the cleaning liquid is supplied to the surface W1, whereby the entire surface W1 is cleaned.
  • the air cleaner 213 dries the surface W 1 of the wafer W cleaned by the sponge cleaner 212.
  • the air cleaner 213 has, for example, a nozzle 213a that jets air to the surface W1.
  • the rotating body 211 is rotated, and the air cleaning tool 213 is disposed on the upper surface of the rotating body 211.
  • air is jetted from the nozzle 213a of the air cleaning tool 213 to the surface W1, whereby the entire surface W1 is dried.
  • the nozzle 213a has a circular shape in the illustrated example, the shape of the nozzle 213a is not limited to this.
  • the nozzle may have a slit shape extending in the longitudinal direction (X-axis direction) of the air cleaner 213.
  • the stone cleaning tool 214 cleans the holding surface 44 a of the transfer pad 44.
  • the stone cleaning tool 214 has, for example, a grindstone that extends longer than the diameter of the holding surface 44a. Then, the rotating body 211 is rotated, and the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211. Thereafter, while the wafer W is rotated by the transfer pad 44, the entire surface of the holding surface 44a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44a.
  • the brush cleaner 215 cleans the holding surface 44 a of the transfer pad 44.
  • the brush cleaner 215 has, for example, a brush that extends longer than the diameter of the holding surface 44a. Then, the rotating body 211 is rotated, and the brush cleaning tool 215 is disposed on the upper surface of the rotating body 211. Thereafter, while the wafer W is rotated by the transfer pad 44, the entire surface of the holding surface 44a is cleaned by bringing the brush cleaning tool 215 into contact with the holding surface 44a.
  • a cassette C containing a plurality of wafers W is placed on the cassette mounting table 10 of the loading station 2.
  • the wafer W is stored so that the surface of the wafer W to which the protective tape is attached is directed upward.
  • the wafer W in the cassette C is taken out by the transfer fork 113 of the wafer transfer apparatus 112 and transferred to the processing apparatus 4.
  • the front and back surfaces are reversed such that the back surface of the wafer W is directed upward by the transfer fork 113.
  • the wafer W transferred to the processing apparatus 4 is delivered to the alignment unit 50. Then, in the alignment unit 50, the horizontal direction of the wafer W is adjusted (step S1 in FIG. 6).
  • the wafer W is transported by the transport unit 40 from the alignment unit 50 to the delivery position A0 and delivered to the chuck 31 at the delivery position A0.
  • the chuck 31 holds the surface W1 of the wafer W.
  • the chuck 31 is moved to the first processing position A1.
  • the back surface W2 of the wafer W is roughly ground by the rough grinding unit 80 (step S2 in FIG. 6).
  • the chuck 31 is moved to the second processing position A2. Then, the back surface W2 of the wafer W is internally ground by the middle grinding unit 90 (step S3 in FIG. 6).
  • the chuck 31 is moved to the third processing position A3. Then, the back surface W2 of the wafer W is finish ground by the finish grinding unit 100 (step S4 in FIG. 6).
  • step S5 in FIG. 6 cleaning is performed to remove the dirt on the back surface W2 to a certain extent.
  • the wafer W is transferred by the transfer unit 40 from the delivery position A0 to the second cleaning unit 70.
  • the second cleaning unit 70 first, as shown in FIG. 7A, with the sponge cleaning tool 212 positioned on the lower surface of the rotating body 211, the cleaning solution tank 230 is raised to clean the sponge cleaning tool 212. Immerse in As a result, the cleaning liquid L is supplied to the sponge cleaning tool 212. Thereafter, as shown in FIG. 7B, the rotating body 211 is rotated, and the sponge cleaning tool 212 including the cleaning liquid L is disposed on the upper surface of the rotating body 211, ie, the sponge cleaning tool 212 is attached to the surface W1 of the wafer W.
  • the sponge cleaning tool 212 is brought into contact with the surface W1 in the state of being arranged opposite to each other. Then, while the cleaning liquid is supplied to the surface W1 while the wafer W is being rotated by the transfer pad 44, the sponge cleaning tool 212 is brought into contact with the surface W1 to clean the entire surface W1 (protective tape P) Step S6 in FIG.
  • the rotating body 211 is rotated, the air cleaning tool 213 is disposed on the upper surface of the rotating body 211, and the wafer W is lifted by the transfer pad 44. Then, in a state where the air cleaning tool 213 is disposed to face the surface W1 of the wafer W, the air cleaning tool 213 jets air to the surface W1 while rotating the wafer W by the transfer pad 44, whereby the entire surface W1 is obtained. It is dried (step S7 of FIG. 6).
  • Step T1 the transfer pad 44 is cleaned using the stone cleaner 214 and the brush cleaner 215 of the second cleaning unit 70 (FIG. 6).
  • Step T1 the state in which the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211, that is, the state in which the stone cleaning tool 214 is disposed opposite to the holding surface 44a of the transport pad 44
  • the entire surface of the holding surface 44 a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44 a while rotating the wafer W by the pad 44.
  • FIG. 8A the state in which the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211, that is, the state in which the stone cleaning tool 214 is disposed opposite to the holding surface 44a of the transport pad 44
  • the entire surface of the holding surface 44 a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44 a while rotating the wafer W by the pad 44.
  • the wafer W is rotated by the transfer pad 44 in a state where the brush cleaning tool 215 is disposed on the upper surface of the rotating body 211, that is, a state where the brush cleaning tool 215 is disposed opposite to the holding surface 44a.
  • the brush cleaning tool 215 By bringing the brush cleaning tool 215 into contact with the holding surface 44a while cleaning, the entire surface of the holding surface 44a is cleaned.
  • the cleaning of the transfer pad 44 may be performed by either the stone cleaning tool 214 or the brush cleaning tool 215, or may be performed by both. Further, the cleaning of the transfer pad 44 is performed at any timing up to step S6.
  • the wafer W is transferred by the transfer unit 40 from the second cleaning unit 70 to the first cleaning unit 60.
  • the back surface W2 of the wafer W is finish-cleaned by the cleaning liquid using the cleaning liquid nozzle (not shown) (step S8 in FIG. 6).
  • the back surface W2 is washed and dried to a desired cleanliness.
  • the wafer W is transferred by the wafer transfer device 112 from the first cleaning unit 60 to the post-processing device 5. Then, in the post-processing apparatus 5, post-processing such as mounting processing for holding the wafer W on the dicing frame and peeling processing for peeling the protective tape P attached to the wafer W is performed (Step S9 in FIG. 6).
  • the second cleaning unit 70 when cleaning the front surface W1 of the wafer W and the holding surface 44a of the transfer pad 44, a plurality of cleaning tools 212 to 215 are required. Even in such a case, as in the cleaning mechanism 210 of the present embodiment, since the plurality of cleaning tools 212 to 215 are attached to the surface of the rotating body 211, space saving of the second cleaning unit 70 is realized. can do. In addition, the appropriate cleaning tools 212 to 215 can be selected only by rotating the rotating body 211, and the surface W1 of the wafer W or the holding surface 44a of the transfer pad 44 can be appropriately cleaned.
  • the cleaning mechanism 210 is disposed so as to extend in the X-axis direction from the loading / unloading port 201.
  • the occupied area of the second cleaning unit 70 is increased, but according to the present embodiment, the occupied area of the second cleaning unit 70 Can be made smaller.
  • the cleaning mechanism 210 may be arranged so as to extend in the Y-axis direction.
  • the configuration of the second cleaning unit 70 is not limited to the above.
  • the rotary body 211 has a rectangular parallelepiped shape, but the shape of the rotary body 211 is not limited to this.
  • the rotator 211 may have a triangular prism shape, and the sponge cleaner 212, the stone cleaner 214, and the brush cleaner 215 may be provided on the surface of the rotator 211.
  • the air cleaner 213 is arranged to extend in the Y-axis direction on the side of the loading / unloading port 201 of the cleaning mechanism 210. Then, when the wafer W held by the transfer pad 44 passes the air cleaning tool 213, air is jetted from the air cleaning tool 213 to the surface W1, and the surface W1 is dried.
  • the air cleaning tool 213 may not have a shape extending in the Y-axis direction, but may be, for example, a single nozzle that jets air.
  • the nozzle of the air cleaner 213 is preferably movable in the Y-axis direction by a moving mechanism (not shown). Then, while the wafer W is rotated by the transfer pad 44, air is jetted from the nozzle of the air cleaning tool 213 to the surface W1, and the surface W1 is dried.
  • the rotating body 211 may have a polygonal prism shape whose side surface shape is a pentagon or more.
  • a cleaning tool that cleans, for example, the back surface W2 of the wafer W may be provided on the side surface of the rotating body 211.
  • the rotating body 211 and the cleaning tools 212 to 215 respectively extend longer than the diameter of the holding surface 44a of the transfer pad 44 (diameter of the surface W1 of the wafer W).
  • the axial length of the members 212 to 215 is not limited to this.
  • the cleaning of the surface W1 of the wafer W is performed while rotating the wafer W.
  • the sponge cleaning tool 212 and the air cleaning tool 213 can clean and dry the entire surface W1 if it is at least half the diameter of the surface W1.
  • cleaning of the holding surface 44a of the transfer pad 44 is also performed while rotating the transfer pad 44. Therefore, the stone cleaning tool 214 and the brush cleaning tool 215 each have at least a half or more of the diameter of the holding surface 44a. If so, the entire surface of the holding surface 44a can be cleaned.
  • the transfer pad 44 when cleaning the front surface W1 of the wafer W and the holding surface 44a of the transfer pad 44, the transfer pad 44 is rotated about the vertical axis, but the transfer pad 44 and the cleaning mechanism 210 rotate relatively. do it.
  • the cleaning mechanism 210 may be rotated about the vertical axis by a rotation mechanism (not shown), or both the transport pad 44 and the cleaning mechanism 210 may be rotated about the vertical axis.
  • the cleaning liquid is supplied from the cleaning liquid tank 230 to the sponge cleaning tool 212 in the above embodiment, the method of supplying the cleaning liquid to the sponge cleaning tool 212 is not limited to this.
  • the sponge cleaning tool 212 may incorporate a cleaning solution nozzle (not shown) and supply the cleaning solution to the sponge of the sponge cleaning tool 212 from the cleaning solution nozzle.
  • the protective tape P is attached to the front surface W1 of the wafer W in order to protect the device, but the protective material of the device is not limited to this.
  • a support substrate such as a support wafer or a glass substrate may be attached to the surface W1 of the wafer W, and the present invention can be applied even in such a case.
  • the cleaning tools 212 to 215 are respectively provided on the side surface of the rotating body 211, but the configuration of the cleaning mechanism 210 is not limited to this.
  • the cleaning mechanism 210 in the cleaning mechanism 210, the work drying tool 300, the chuck cleaning tool 301, and the work cleaning tool 302 are arranged in this order in the Y-axis direction.
  • the work drying tool 300 is provided with an air cleaning tool 213 which sprays air on the surface W1 of the wafer W to dry the surface W1. Further, the work drying tool 300 is configured to be movable in the X-axis direction inside the second cleaning unit 70 by the moving mechanism 303.
  • the chuck cleaning tool 301 is provided with a rotating body 211, and at least a stone cleaning tool 214 and a brush cleaning tool 215 are provided on the surface of the rotating body 211.
  • the stone cleaning tool 214 and the brush cleaning tool 215 each have, for example, a grindstone and a brush which extend longer than the diameter of the holding surface 44 a in the X-axis direction.
  • the workpiece cleaning tool 302 is provided with a sponge cleaning tool 212, a sponge cleaning nozzle 304 and a sponge cleaning roller 305.
  • the sponge cleaner 212 is attached to a rotation mechanism (not shown) incorporating an actuator (not shown), and is configured to be rotatable via a shaft (not shown). Furthermore, the workpiece cleaning tool 302 is configured to be movable up and down by a lift mechanism (not shown), and is controlled to protrude above the upper end of the chuck cleaning tool 301 when cleaning the surface W1 of the wafer W. Ru.
  • the sponge cleaning tool 212 has, for example, a sponge that extends longer than the diameter of the surface W1 of the wafer W in the X-axis direction.
  • the cleaning liquid L (for example, pure water or the like) is supplied from the sponge cleaning nozzle 304 to the sponge cleaning tool 212. Thereafter, as shown in FIG. 11A, with the sponge cleaning tool 212 and the sponge cleaning roller 305 rotated, the work cleaning tool 302 is lifted by the lifting mechanism, and the sponge cleaning tool 212 including the cleaning liquid L is transferred to the wafer W. It abuts on the surface W1. Then, the sponge cleaning tool 212 is brought into contact with the surface W1 while the wafer W is moved in the Y axis direction by the transfer pad 44, whereby the entire surface W1 (protective tape P) is cleaned.
  • the cleaning liquid L for example, pure water or the like
  • the sponge cleaning tool 212 includes the cleaning liquid L, the dirt on the surface W1 of the wafer W can be appropriately removed. Also, the dirt removed by the sponge cleaner 212 is appropriately removed from the sponge cleaner 212 by the sponge cleaning roller 305.
  • the wafer W may be rotated by the transfer pad 44 in cleaning the surface W1.
  • the wafer W is moved above the workpiece drying tool 300 by the transfer pad 44. Then, in a state where the air cleaning tool 213 is disposed to face the front surface W1 of the wafer W as shown in FIG. 11C, the air cleaning tool 213 sprays air onto the front surface W1 while rotating the wafer W by the transfer pad 44. By moving the air cleaning tool 213 in the X-axis direction in the above state, the entire surface W1 (protective tape P) is dried.
  • the transfer pad 44 is cleaned using the chuck cleaning tool 301. More specifically, as shown in FIG. 12A, the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211, that is, in the state where the stone cleaning tool 214 is disposed opposite to the holding surface 44a of the transport pad 44 The entire surface of the holding surface 44 a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44 a while rotating the pad 44. Further, as shown in FIG.
  • a cleaning solution for example, pure water or the like
  • a cleaning solution supply line (not shown) connected to the holding surface 44a of the transfer pad 44.
  • the cleaning liquid supply line is switchably connected to the suction line of the wafer W, for example, inside the transfer pad 44, and is switched from the suction line when the transfer pad 44 is cleaned.
  • the cleaning of the transfer pad 44 may be performed by either the stone cleaning tool 214 or the brush cleaning tool 215, or may be performed by both. Further, the cleaning of the transfer pad 44 is performed at an arbitrary timing until the cleaning of the surface W1 of the wafer W.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Dicing (AREA)
PCT/JP2018/047860 2018-01-09 2018-12-26 洗浄装置、洗浄方法及びコンピュータ記憶媒体 WO2019138881A1 (ja)

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KR1020207021993A KR102629528B1 (ko) 2018-01-09 2018-12-26 세정 장치, 세정 방법 및 컴퓨터 기억 매체
JP2019564624A JP6990720B2 (ja) 2018-01-09 2018-12-26 洗浄装置、洗浄方法及びコンピュータ記憶媒体
CN201880085394.1A CN111566784B (zh) 2018-01-09 2018-12-26 清洗装置、清洗方法以及计算机存储介质

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JP7481198B2 (ja) 2020-08-20 2024-05-10 株式会社ディスコ ウェーハ清掃装置、及び保持面清掃装置

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CN111566784B (zh) 2024-03-26
JPWO2019138881A1 (ja) 2020-12-17
TW201934209A (zh) 2019-09-01
KR20200101977A (ko) 2020-08-28
KR102629528B1 (ko) 2024-01-25
CN111566784A (zh) 2020-08-21
JP6990720B2 (ja) 2022-01-12

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