WO2019138881A1 - Cleaning device, cleaning method, and computer memory medium - Google Patents

Cleaning device, cleaning method, and computer memory medium Download PDF

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Publication number
WO2019138881A1
WO2019138881A1 PCT/JP2018/047860 JP2018047860W WO2019138881A1 WO 2019138881 A1 WO2019138881 A1 WO 2019138881A1 JP 2018047860 W JP2018047860 W JP 2018047860W WO 2019138881 A1 WO2019138881 A1 WO 2019138881A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
tool
rotating body
wafer
substrate
Prior art date
Application number
PCT/JP2018/047860
Other languages
French (fr)
Japanese (ja)
Inventor
宗久 児玉
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to CN201880085394.1A priority Critical patent/CN111566784B/en
Priority to KR1020207021993A priority patent/KR102629528B1/en
Priority to JP2019564624A priority patent/JP6990720B2/en
Publication of WO2019138881A1 publication Critical patent/WO2019138881A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

  • the present invention relates to a cleaning apparatus for cleaning an object to be processed, a cleaning method using the cleaning apparatus, and a computer storage medium.
  • the back surface of a wafer may be ground to thin the wafer with respect to a semiconductor wafer (hereinafter referred to as a wafer) on which devices such as a plurality of electronic circuits are formed on the surface. It has been done.
  • Grinding of the back surface of the wafer is performed using a grinding apparatus (processing apparatus) described in, for example, Patent Documents 1 to 3.
  • the grinding apparatus is provided with cleaning means for cleaning the surface of the wafer, the suction surface of the wafer on the transfer pad for transferring the wafer, and the like.
  • Patent Document 1 as a means for cleaning the surface of a wafer, a cleaning brush mechanism that abuts a brush on the surface of the wafer to clean the surface and a cleaning brush mechanism abuts the surface of the wafer.
  • a cleaning means comprising a brush cleaning solution supply mechanism for supplying a cleaning solution to the surface.
  • Patent Document 2 also discloses a brush cleaning apparatus that cleans the surface by bringing a brush into contact with the surface of the wafer as a means for cleaning the surface of the wafer.
  • Patent Document 3 discloses a washing means provided with a cleaning brush that is in contact with the suction surface to wash the suction surface.
  • Patent Documents 1 to 3 described above each cleans either the surface of the wafer or the suction surface of the transfer pad, there are cases where both of them may be cleaned by the grinding apparatus. , And multiple cleaning means are required. Further, there are also cases where either the surface of the wafer or the suction surface of the transfer pad is cleaned by a plurality of cleaning means. And, when a plurality of cleaning means are provided in the grinding apparatus as described above, a space for installing these cleaning means is required, but it is not considered to secure such a space in the conventional grinding apparatus. Therefore, there is room for improvement in the conventional grinding apparatus.
  • the present invention has been made in view of the above circumstances, and it is an object of the present invention to achieve space saving of a cleaning device provided with a plurality of cleaning tools when cleaning an object to be processed using a plurality of cleaning tools. Do.
  • One aspect of the present invention which solves the above-mentioned subject is a washing device which washes a processed object, and is provided in the rotating body which rotates centering on the diameter direction of the washing side of the processed object as a central axis, And a plurality of cleaning tools for cleaning the cleaning surface, wherein the plurality of cleaning tools extend in the axial direction on the surface of the rotating body and are arranged side by side in the circumferential direction of the rotating body.
  • Another aspect of the present invention is a cleaning method for cleaning an object to be treated, comprising: a rotating body rotating around a radial direction of a cleaning surface of the object to be treated; and an axis on the surface of the rotating body A cleaning tool selected from among the plurality of cleaning tools according to the object to be treated, using a cleaning device provided with a plurality of cleaning tools extending in a direction and arranged in a circumferential direction of the rotating body Then, the rotating body is rotated to place the one cleaning tool opposite to the cleaning surface, and the one cleaning tool is used to clean the cleaning surface.
  • a readable computer storage medium storing a program operating on a computer of a control unit that controls the cleaning device to cause the cleaning device to execute the cleaning method. It is.
  • a cleaning device provided with the plurality of cleaning tools Space saving can be realized.
  • FIG. 1 is a plan view schematically showing the outline of the configuration of a substrate processing system 1.
  • the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to one another are defined, and the Z-axis positive direction is the vertically upward direction.
  • the wafer W as a substrate shown in FIG. 2 is thinned.
  • the wafer W is, for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer.
  • a device (not shown) is formed on the surface W1 of the wafer W, and a protective material for protecting the device, for example, a protective tape P is attached to the surface W1.
  • predetermined processing such as grinding is performed on the back surface W2 of the wafer W to thin the wafer.
  • the substrate processing system 1 stores the wafer W before processing in the cassette C, and carries the plurality of wafers W into the substrate processing system 1 from the outside in cassette units from the outside, and the wafer W after processing in the cassette C And a processing apparatus 4 for processing and thinning the wafer W, and a post-processing wafer W.
  • It has a configuration in which a post-processing device 5 for performing processing and a transfer station 6 for transferring the wafer W among the loading station 2, the processing device 4 and the post-processing device 5 are connected.
  • the loading station 2, the transfer station 6, and the processing device 4 are arranged in this order in the Y-axis direction on the X-axis negative direction side.
  • the unloading station 3 and the post-processing device 5 are arranged side by side in this order in the Y-axis direction on the X-axis positive direction side.
  • a cassette mounting table 10 is provided at the loading station 2.
  • a plurality of, for example, two cassettes C can be mounted on the cassette mounting table 10 in a row in the X-axis direction.
  • the unloading station 3 also has the same configuration as the loading station 2.
  • a cassette mounting table 20 is provided at the unloading station 3, and for example, two cassettes C can be mounted on the cassette mounting table 20 in a row in the X-axis direction.
  • the loading station 2 and the unloading station 3 may be integrated into one loading and unloading station, and in such a case, the loading and unloading station is provided with a common cassette mounting table.
  • the processing apparatus 4 includes a rotary table 30, a conveyance unit 40, an alignment unit 50, a first cleaning unit 60, a second cleaning unit 70, a rough grinding unit 80, a middle grinding unit 90, and a finish grinding unit 100. There is.
  • the rotary table 30 is rotatably configured by a rotation mechanism (not shown).
  • a rotation mechanism not shown.
  • the chucks 31 are arranged uniformly on the same circumference as the rotary table 30, that is, every 90 degrees.
  • the four chucks 31 are movable to the delivery position A0 and the processing positions A1 to A3 by rotation of the rotary table 30.
  • the delivery position A0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the rotary table 30, and is provided inside the sink 33 on the Y-axis negative direction side of the delivery position A0.
  • the second cleaning unit 70, the alignment unit 50, and the first cleaning unit 60 are arranged side by side.
  • the alignment unit 50 and the first cleaning unit 60 are stacked and arranged in this order from above.
  • the first processing position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the rotary table 30, and the rough grinding unit 80 is disposed.
  • the second processing position A2 is a position on the X axis negative direction side and the Y axis positive direction side of the rotary table 30, and the middle grinding unit 90 is disposed.
  • the third processing position A3 is a position on the X axis negative direction side and the Y axis negative direction side of the rotary table 30, and the finish grinding unit 100 is disposed.
  • the chuck 31 is held by a chuck base 32.
  • the chuck 31 and the chuck base 32 are configured to be rotatable by a rotation mechanism (not shown).
  • the transfer unit 40 is an articulated robot including a plurality of, for example, three arms 41 to 43.
  • the three arms 41 to 43 are connected by joints (not shown), and by these joints, the first arm 41 and the second arm 42 are configured to be pivotable around their respective proximal ends.
  • a transfer pad 44 for holding the wafer W by suction is attached to the first arm 41 at the tip.
  • the transfer pad 44 has a circular shape with a diameter longer than the diameter of the wafer W in plan view, and adsorbs and holds the back surface W2 of the wafer W.
  • the transport pad 44 is configured to be rotatable by a rotating portion (not shown) provided to the first arm 41.
  • the third arm 43 at the base end is attached to a vertical movement mechanism 45 for moving the arms 41 to 43 in the vertical direction.
  • the transfer unit 40 having such a configuration can transfer the wafer W to the delivery position A0, the alignment unit 50, the first cleaning unit 60, and the second cleaning unit 70.
  • the second cleaning unit 70 constitutes the cleaning device in the present invention.
  • the alignment unit 50 adjusts the horizontal direction of the wafer W before the grinding process. For example, while the wafer W held by the spin chuck (not shown) is rotated, the position of the notch of the wafer W is detected by detecting the position of the notch of the wafer W by the detection unit (not shown). Adjust the horizontal orientation of W.
  • the back surface W2 of the wafer W after the grinding process is cleaned, more specifically, spin-cleaned.
  • the cleaning liquid is supplied from the cleaning liquid nozzle (not shown) to the back surface W2 of the wafer W. Then, the supplied cleaning liquid diffuses on the back surface W2, and the back surface W2 is cleaned.
  • the second cleaning unit 70 cleans the surface W1 of the wafer W in a state where the wafer W after the grinding processing is held by the transfer pad 44, that is, the protective tape P attached to the surface W1. The holding surface of the wafer W is cleaned.
  • the configuration of the second cleaning unit 70 will be described later.
  • the rough grinding unit 80 the back surface W2 of the wafer W is roughly ground.
  • the rough grinding unit 80 has a rough grinding portion 81 provided with a ring-shaped rotatable rough grinding wheel (not shown).
  • the rough grinding portion 81 is configured to be movable in the vertical direction and the horizontal direction along the support 82. Then, while the back surface W2 of the wafer W held by the chuck 31 is in contact with the rough grinding wheel, the chuck 31 and the rough grinding wheel are respectively rotated to roughly grind the back surface W2 of the wafer W.
  • the back surface W2 of the wafer W is middle ground.
  • the middle grinding unit 90 has a middle grinding portion 91 having an annular shape and a rotatable middle grinding wheel (not shown).
  • the middle grinding portion 91 is configured to be movable in the vertical direction and the horizontal direction along the support 92.
  • the grain size of the abrasive grains of the medium grinding wheel is smaller than the grain size of the abrasive grains of the rough grinding stone.
  • the back surface W2 of the wafer W is finish ground.
  • the finish grinding unit 100 has a finish grinding portion 101 provided with a ring-shaped rotatable finish grinding wheel (not shown).
  • the finish grinding unit 101 is configured to be movable in the vertical direction and the horizontal direction along the support 102.
  • the grain size of the abrasive grains of the finish grinding wheel is smaller than the grain size of the abrasive grains of the medium grinding wheel.
  • post-processing device In the post-processing apparatus 5, post-processing is performed on the wafer W processed by the processing apparatus 4. As the post-processing, for example, a mounting process of holding the wafer W on the dicing frame through the dicing tape, a peeling process of peeling the protective tape P attached to the wafer W, and the like are performed. Then, the post-processing apparatus 5 carries the post-processing and carries the wafer W held by the dicing frame to the cassette C of the unloading station 3. A known device is used for the mounting process and the peeling process performed by the post-processing device 5 respectively.
  • the transfer station 6 is provided with a wafer transfer area 110.
  • a wafer transfer apparatus 112 movable on the transfer path 111 extending in the X-axis direction is provided.
  • the wafer transfer apparatus 112 has a transfer fork 113 and a transfer pad 114 as a wafer holding unit for holding the wafer W.
  • the tip of the transfer fork 113 is branched into two, and the wafer W is held by suction.
  • the transfer fork 113 transfers the wafer W before the grinding process.
  • the transfer pad 114 has a circular shape with a diameter longer than that of the wafer W in plan view, and holds the wafer W by suction.
  • the transfer pad 114 transfers the wafer W after the grinding process.
  • the transfer fork 113 and the transfer pad 114 are configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis, respectively.
  • the substrate processing system 1 is provided with a control unit 120.
  • the control unit 120 is, for example, a computer and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1.
  • the program storage unit also stores a program for realizing the below-described wafer processing in the substrate processing system 1 by controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses.
  • the program is recorded on a computer readable storage medium H such as a computer readable hard disk (HD), a flexible disk (FD), a compact disc (CD), a magnet optical desk (MO), a memory card, etc. It may be one that has been installed in the control unit 120 from the storage medium H.
  • the second cleaning unit 70 has a processing container 200.
  • a transfer pad 44 of the transfer unit 40 and a loading / unloading port 201 to which the wafer W held by the transfer pad 44 is loaded and unloaded are formed.
  • the loading / unloading port 201 is provided with an open / close shutter (not shown).
  • the processing container 200 is a housing, but the shape of the processing container 200 is not limited to this.
  • the upper surface of the processing container 200 may be open, and the loading / unloading port 201 may be omitted. Further, the processing container 200 itself may be omitted.
  • the cleaning mechanism 210, the rotation mechanism 220, and the cleaning liquid tank 230, which will be described later, are respectively provided inside the sink 33.
  • a cleaning mechanism 210 for cleaning the surface W1 (protective tape P) of the wafer W and the holding surface 44a of the wafer W for the transfer pad 44, a rotation mechanism 220 for rotating the cleaning mechanism 210, and A cleaning solution tank 230 for storing the cleaning solution on the surface W1 is provided.
  • the wafer W and the transfer pad 44 constitute the object of the present invention
  • the surface W1 and the holding surface 44a constitute the cleaning surface of the present invention.
  • the cleaning mechanism 210 has a configuration in which a plurality of, for example, four cleaning tools 212 to 215 are attached to the surface of the rotating body 211.
  • the rotating body 211 rotates about the central axis in the radial direction (X-axis direction) of the surface W1 of the wafer W and the radial direction (X-axis direction) of the holding surface 44a of the transfer pad 44.
  • the rotating body 211 has, for example, a rectangular parallelepiped shape.
  • the cleaning mechanism 210 (rotary body 211) is attached to the rotating mechanism 220.
  • the rotation mechanism 220 is provided on a shaft 221 connected to both ends in the axial direction (X-axis direction) of the rotating body 211, a driving unit 222 provided on one shaft 221 for rotating the rotating body 211, and the other shaft 221 And a supporting portion 223 for supporting the rotating body 211.
  • the drive unit 222 incorporates, for example, an actuator (not shown), and can rotate the rotating body 211 via the shaft 221.
  • the four cleaning tools 212 to 215 are a sponge cleaning tool 212 as a substrate cleaning tool, an air cleaning tool 213 as a substrate drying tool, a stone cleaning tool 214 as a pad cleaning tool, and a pad cleaning tool.
  • the brush cleaner 215 of The cleaning tools 212 to 215 extend in the axial direction (X-axis direction) on the surface of the rotating body 211, respectively.
  • the cleaning tools 212 to 215 are provided on the four surfaces of the rotating body 211, that is, arranged in the circumferential direction of the rotating body 211.
  • the sponge cleaning tool 212 cleans the surface W1 (protective tape P) of the wafer W.
  • the sponge cleaner 212 has, for example, a sponge which is stretched longer than the diameter of the surface W1.
  • a cleaning solution for example, pure water, is supplied to the sponge cleaning tool 212 by a cleaning solution tank 230 shown in FIGS. 3 and 4. Then, the sponge includes the cleaning liquid, and the sponge cleaning tool 212 contacts the surface W1 of the wafer W while supplying the cleaning liquid to clean the surface W1.
  • the cleaning solution tank 230 is provided below the cleaning mechanism 210.
  • the cleaning solution tank 230 is connected to a liquid supply unit 231 that supplies the cleaning solution to the inside of the cleaning solution tank 230 and a drainage unit 232 that discharges the cleaning solution inside the cleaning solution tank 230. Then, while the cleaning liquid is supplied from the liquid supply unit 231, the cleaning liquid is discharged from the drainage section 232, and the cleaning liquid is constantly stored in the cleaning liquid tank 230.
  • the cleaning liquid may overflow from the upper surface of the cleaning liquid tank 230 and the cleaning liquid in the cleaning liquid tank 230 may be discharged at all times.
  • the cleaning solution tank 230 is configured to be able to move up and down by the lifting mechanism 233.
  • the cleaning fluid tank 230 and the rotating body 211 may be moved up and down relative to each other.
  • the rotating body 211 may be configured to be movable up and down.
  • both the cleaning fluid tank 230 and the rotating body 211 may be lifted and lowered. You may configure it.
  • the cleaning solution tank 230 and the rotating body 211 may be fixed. In such a case, it is possible to clean the object to be processed of the wafer W and the transfer pad 44 while always cleaning the cleaning tools 212 to 215 provided on the rotating body 211 by the cleaning solution stored in the cleaning solution tank 230.
  • the cleaning solution tank 230 is raised while the sponge cleaning tool 212 is positioned on the lower surface of the rotating body 211. Immerse in the cleaning solution. Thereby, the cleaning liquid is supplied to the sponge cleaning tool 212. Thereafter, the rotating body 211 is rotated, and the sponge cleaning tool 212 is brought into contact with the surface W1 of the wafer W in a state where the sponge cleaning tool 212 including the cleaning liquid is disposed on the upper surface of the rotating body 211. In this state, while the wafer W is rotated by the transfer pad 44, the sponge cleaning tool 212 is brought into contact with the surface W1 while the cleaning liquid is supplied to the surface W1, whereby the entire surface W1 is cleaned.
  • the air cleaner 213 dries the surface W 1 of the wafer W cleaned by the sponge cleaner 212.
  • the air cleaner 213 has, for example, a nozzle 213a that jets air to the surface W1.
  • the rotating body 211 is rotated, and the air cleaning tool 213 is disposed on the upper surface of the rotating body 211.
  • air is jetted from the nozzle 213a of the air cleaning tool 213 to the surface W1, whereby the entire surface W1 is dried.
  • the nozzle 213a has a circular shape in the illustrated example, the shape of the nozzle 213a is not limited to this.
  • the nozzle may have a slit shape extending in the longitudinal direction (X-axis direction) of the air cleaner 213.
  • the stone cleaning tool 214 cleans the holding surface 44 a of the transfer pad 44.
  • the stone cleaning tool 214 has, for example, a grindstone that extends longer than the diameter of the holding surface 44a. Then, the rotating body 211 is rotated, and the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211. Thereafter, while the wafer W is rotated by the transfer pad 44, the entire surface of the holding surface 44a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44a.
  • the brush cleaner 215 cleans the holding surface 44 a of the transfer pad 44.
  • the brush cleaner 215 has, for example, a brush that extends longer than the diameter of the holding surface 44a. Then, the rotating body 211 is rotated, and the brush cleaning tool 215 is disposed on the upper surface of the rotating body 211. Thereafter, while the wafer W is rotated by the transfer pad 44, the entire surface of the holding surface 44a is cleaned by bringing the brush cleaning tool 215 into contact with the holding surface 44a.
  • a cassette C containing a plurality of wafers W is placed on the cassette mounting table 10 of the loading station 2.
  • the wafer W is stored so that the surface of the wafer W to which the protective tape is attached is directed upward.
  • the wafer W in the cassette C is taken out by the transfer fork 113 of the wafer transfer apparatus 112 and transferred to the processing apparatus 4.
  • the front and back surfaces are reversed such that the back surface of the wafer W is directed upward by the transfer fork 113.
  • the wafer W transferred to the processing apparatus 4 is delivered to the alignment unit 50. Then, in the alignment unit 50, the horizontal direction of the wafer W is adjusted (step S1 in FIG. 6).
  • the wafer W is transported by the transport unit 40 from the alignment unit 50 to the delivery position A0 and delivered to the chuck 31 at the delivery position A0.
  • the chuck 31 holds the surface W1 of the wafer W.
  • the chuck 31 is moved to the first processing position A1.
  • the back surface W2 of the wafer W is roughly ground by the rough grinding unit 80 (step S2 in FIG. 6).
  • the chuck 31 is moved to the second processing position A2. Then, the back surface W2 of the wafer W is internally ground by the middle grinding unit 90 (step S3 in FIG. 6).
  • the chuck 31 is moved to the third processing position A3. Then, the back surface W2 of the wafer W is finish ground by the finish grinding unit 100 (step S4 in FIG. 6).
  • step S5 in FIG. 6 cleaning is performed to remove the dirt on the back surface W2 to a certain extent.
  • the wafer W is transferred by the transfer unit 40 from the delivery position A0 to the second cleaning unit 70.
  • the second cleaning unit 70 first, as shown in FIG. 7A, with the sponge cleaning tool 212 positioned on the lower surface of the rotating body 211, the cleaning solution tank 230 is raised to clean the sponge cleaning tool 212. Immerse in As a result, the cleaning liquid L is supplied to the sponge cleaning tool 212. Thereafter, as shown in FIG. 7B, the rotating body 211 is rotated, and the sponge cleaning tool 212 including the cleaning liquid L is disposed on the upper surface of the rotating body 211, ie, the sponge cleaning tool 212 is attached to the surface W1 of the wafer W.
  • the sponge cleaning tool 212 is brought into contact with the surface W1 in the state of being arranged opposite to each other. Then, while the cleaning liquid is supplied to the surface W1 while the wafer W is being rotated by the transfer pad 44, the sponge cleaning tool 212 is brought into contact with the surface W1 to clean the entire surface W1 (protective tape P) Step S6 in FIG.
  • the rotating body 211 is rotated, the air cleaning tool 213 is disposed on the upper surface of the rotating body 211, and the wafer W is lifted by the transfer pad 44. Then, in a state where the air cleaning tool 213 is disposed to face the surface W1 of the wafer W, the air cleaning tool 213 jets air to the surface W1 while rotating the wafer W by the transfer pad 44, whereby the entire surface W1 is obtained. It is dried (step S7 of FIG. 6).
  • Step T1 the transfer pad 44 is cleaned using the stone cleaner 214 and the brush cleaner 215 of the second cleaning unit 70 (FIG. 6).
  • Step T1 the state in which the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211, that is, the state in which the stone cleaning tool 214 is disposed opposite to the holding surface 44a of the transport pad 44
  • the entire surface of the holding surface 44 a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44 a while rotating the wafer W by the pad 44.
  • FIG. 8A the state in which the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211, that is, the state in which the stone cleaning tool 214 is disposed opposite to the holding surface 44a of the transport pad 44
  • the entire surface of the holding surface 44 a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44 a while rotating the wafer W by the pad 44.
  • the wafer W is rotated by the transfer pad 44 in a state where the brush cleaning tool 215 is disposed on the upper surface of the rotating body 211, that is, a state where the brush cleaning tool 215 is disposed opposite to the holding surface 44a.
  • the brush cleaning tool 215 By bringing the brush cleaning tool 215 into contact with the holding surface 44a while cleaning, the entire surface of the holding surface 44a is cleaned.
  • the cleaning of the transfer pad 44 may be performed by either the stone cleaning tool 214 or the brush cleaning tool 215, or may be performed by both. Further, the cleaning of the transfer pad 44 is performed at any timing up to step S6.
  • the wafer W is transferred by the transfer unit 40 from the second cleaning unit 70 to the first cleaning unit 60.
  • the back surface W2 of the wafer W is finish-cleaned by the cleaning liquid using the cleaning liquid nozzle (not shown) (step S8 in FIG. 6).
  • the back surface W2 is washed and dried to a desired cleanliness.
  • the wafer W is transferred by the wafer transfer device 112 from the first cleaning unit 60 to the post-processing device 5. Then, in the post-processing apparatus 5, post-processing such as mounting processing for holding the wafer W on the dicing frame and peeling processing for peeling the protective tape P attached to the wafer W is performed (Step S9 in FIG. 6).
  • the second cleaning unit 70 when cleaning the front surface W1 of the wafer W and the holding surface 44a of the transfer pad 44, a plurality of cleaning tools 212 to 215 are required. Even in such a case, as in the cleaning mechanism 210 of the present embodiment, since the plurality of cleaning tools 212 to 215 are attached to the surface of the rotating body 211, space saving of the second cleaning unit 70 is realized. can do. In addition, the appropriate cleaning tools 212 to 215 can be selected only by rotating the rotating body 211, and the surface W1 of the wafer W or the holding surface 44a of the transfer pad 44 can be appropriately cleaned.
  • the cleaning mechanism 210 is disposed so as to extend in the X-axis direction from the loading / unloading port 201.
  • the occupied area of the second cleaning unit 70 is increased, but according to the present embodiment, the occupied area of the second cleaning unit 70 Can be made smaller.
  • the cleaning mechanism 210 may be arranged so as to extend in the Y-axis direction.
  • the configuration of the second cleaning unit 70 is not limited to the above.
  • the rotary body 211 has a rectangular parallelepiped shape, but the shape of the rotary body 211 is not limited to this.
  • the rotator 211 may have a triangular prism shape, and the sponge cleaner 212, the stone cleaner 214, and the brush cleaner 215 may be provided on the surface of the rotator 211.
  • the air cleaner 213 is arranged to extend in the Y-axis direction on the side of the loading / unloading port 201 of the cleaning mechanism 210. Then, when the wafer W held by the transfer pad 44 passes the air cleaning tool 213, air is jetted from the air cleaning tool 213 to the surface W1, and the surface W1 is dried.
  • the air cleaning tool 213 may not have a shape extending in the Y-axis direction, but may be, for example, a single nozzle that jets air.
  • the nozzle of the air cleaner 213 is preferably movable in the Y-axis direction by a moving mechanism (not shown). Then, while the wafer W is rotated by the transfer pad 44, air is jetted from the nozzle of the air cleaning tool 213 to the surface W1, and the surface W1 is dried.
  • the rotating body 211 may have a polygonal prism shape whose side surface shape is a pentagon or more.
  • a cleaning tool that cleans, for example, the back surface W2 of the wafer W may be provided on the side surface of the rotating body 211.
  • the rotating body 211 and the cleaning tools 212 to 215 respectively extend longer than the diameter of the holding surface 44a of the transfer pad 44 (diameter of the surface W1 of the wafer W).
  • the axial length of the members 212 to 215 is not limited to this.
  • the cleaning of the surface W1 of the wafer W is performed while rotating the wafer W.
  • the sponge cleaning tool 212 and the air cleaning tool 213 can clean and dry the entire surface W1 if it is at least half the diameter of the surface W1.
  • cleaning of the holding surface 44a of the transfer pad 44 is also performed while rotating the transfer pad 44. Therefore, the stone cleaning tool 214 and the brush cleaning tool 215 each have at least a half or more of the diameter of the holding surface 44a. If so, the entire surface of the holding surface 44a can be cleaned.
  • the transfer pad 44 when cleaning the front surface W1 of the wafer W and the holding surface 44a of the transfer pad 44, the transfer pad 44 is rotated about the vertical axis, but the transfer pad 44 and the cleaning mechanism 210 rotate relatively. do it.
  • the cleaning mechanism 210 may be rotated about the vertical axis by a rotation mechanism (not shown), or both the transport pad 44 and the cleaning mechanism 210 may be rotated about the vertical axis.
  • the cleaning liquid is supplied from the cleaning liquid tank 230 to the sponge cleaning tool 212 in the above embodiment, the method of supplying the cleaning liquid to the sponge cleaning tool 212 is not limited to this.
  • the sponge cleaning tool 212 may incorporate a cleaning solution nozzle (not shown) and supply the cleaning solution to the sponge of the sponge cleaning tool 212 from the cleaning solution nozzle.
  • the protective tape P is attached to the front surface W1 of the wafer W in order to protect the device, but the protective material of the device is not limited to this.
  • a support substrate such as a support wafer or a glass substrate may be attached to the surface W1 of the wafer W, and the present invention can be applied even in such a case.
  • the cleaning tools 212 to 215 are respectively provided on the side surface of the rotating body 211, but the configuration of the cleaning mechanism 210 is not limited to this.
  • the cleaning mechanism 210 in the cleaning mechanism 210, the work drying tool 300, the chuck cleaning tool 301, and the work cleaning tool 302 are arranged in this order in the Y-axis direction.
  • the work drying tool 300 is provided with an air cleaning tool 213 which sprays air on the surface W1 of the wafer W to dry the surface W1. Further, the work drying tool 300 is configured to be movable in the X-axis direction inside the second cleaning unit 70 by the moving mechanism 303.
  • the chuck cleaning tool 301 is provided with a rotating body 211, and at least a stone cleaning tool 214 and a brush cleaning tool 215 are provided on the surface of the rotating body 211.
  • the stone cleaning tool 214 and the brush cleaning tool 215 each have, for example, a grindstone and a brush which extend longer than the diameter of the holding surface 44 a in the X-axis direction.
  • the workpiece cleaning tool 302 is provided with a sponge cleaning tool 212, a sponge cleaning nozzle 304 and a sponge cleaning roller 305.
  • the sponge cleaner 212 is attached to a rotation mechanism (not shown) incorporating an actuator (not shown), and is configured to be rotatable via a shaft (not shown). Furthermore, the workpiece cleaning tool 302 is configured to be movable up and down by a lift mechanism (not shown), and is controlled to protrude above the upper end of the chuck cleaning tool 301 when cleaning the surface W1 of the wafer W. Ru.
  • the sponge cleaning tool 212 has, for example, a sponge that extends longer than the diameter of the surface W1 of the wafer W in the X-axis direction.
  • the cleaning liquid L (for example, pure water or the like) is supplied from the sponge cleaning nozzle 304 to the sponge cleaning tool 212. Thereafter, as shown in FIG. 11A, with the sponge cleaning tool 212 and the sponge cleaning roller 305 rotated, the work cleaning tool 302 is lifted by the lifting mechanism, and the sponge cleaning tool 212 including the cleaning liquid L is transferred to the wafer W. It abuts on the surface W1. Then, the sponge cleaning tool 212 is brought into contact with the surface W1 while the wafer W is moved in the Y axis direction by the transfer pad 44, whereby the entire surface W1 (protective tape P) is cleaned.
  • the cleaning liquid L for example, pure water or the like
  • the sponge cleaning tool 212 includes the cleaning liquid L, the dirt on the surface W1 of the wafer W can be appropriately removed. Also, the dirt removed by the sponge cleaner 212 is appropriately removed from the sponge cleaner 212 by the sponge cleaning roller 305.
  • the wafer W may be rotated by the transfer pad 44 in cleaning the surface W1.
  • the wafer W is moved above the workpiece drying tool 300 by the transfer pad 44. Then, in a state where the air cleaning tool 213 is disposed to face the front surface W1 of the wafer W as shown in FIG. 11C, the air cleaning tool 213 sprays air onto the front surface W1 while rotating the wafer W by the transfer pad 44. By moving the air cleaning tool 213 in the X-axis direction in the above state, the entire surface W1 (protective tape P) is dried.
  • the transfer pad 44 is cleaned using the chuck cleaning tool 301. More specifically, as shown in FIG. 12A, the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211, that is, in the state where the stone cleaning tool 214 is disposed opposite to the holding surface 44a of the transport pad 44 The entire surface of the holding surface 44 a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44 a while rotating the pad 44. Further, as shown in FIG.
  • a cleaning solution for example, pure water or the like
  • a cleaning solution supply line (not shown) connected to the holding surface 44a of the transfer pad 44.
  • the cleaning liquid supply line is switchably connected to the suction line of the wafer W, for example, inside the transfer pad 44, and is switched from the suction line when the transfer pad 44 is cleaned.
  • the cleaning of the transfer pad 44 may be performed by either the stone cleaning tool 214 or the brush cleaning tool 215, or may be performed by both. Further, the cleaning of the transfer pad 44 is performed at an arbitrary timing until the cleaning of the surface W1 of the wafer W.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Dicing (AREA)

Abstract

This cleaning device is for cleaning a workpiece and includes: a rotating body that rotates about an axis which is the radial direction of the washing surface of the workpiece; and a plurality of washing implements that are disposed on the rotating body and that are for washing the washing surface. The plurality of washing implements extend in the axial direction on the surface of the rotating body and are disposed lined up in the circumferential direction of the rotating body.

Description

洗浄装置、洗浄方法及びコンピュータ記憶媒体Cleaning apparatus, cleaning method and computer storage medium
（関連出願の相互参照）
　本願は、２０１８年１月９日に日本国に出願された特願２０１８－０００９８１号に基づき、優先権を主張し、その内容をここに援用する。 (Cross-reference to related applications)
Priority is claimed on Japanese Patent Application No. 2018-000981, filed January 9, 2018, the content of which is incorporated herein by reference.
　本発明は、被処理体を洗浄する洗浄装置、当該洗浄装置を用いた洗浄方法及びコンピュータ記憶媒体に関する。 The present invention relates to a cleaning apparatus for cleaning an object to be processed, a cleaning method using the cleaning apparatus, and a computer storage medium.
　近年、半導体デバイスの製造工程においては、表面に複数の電子回路等のデバイスが形成された半導体ウェハ（以下、ウェハという）に対し、当該ウェハの裏面を研削して、ウェハを薄化することが行われている。 In recent years, in the semiconductor device manufacturing process, the back surface of a wafer may be ground to thin the wafer with respect to a semiconductor wafer (hereinafter referred to as a wafer) on which devices such as a plurality of electronic circuits are formed on the surface. It has been done.
　ウェハの裏面の研削は、例えば特許文献１～３に記載された研削装置（加工装置）を用いて行われる。研削装置には、ウェハの裏面を研削する研削手段に加え、ウェハの表面や、ウェハを搬送する搬送パッドにおけるウェハの吸着面などを洗浄する洗浄手段が設けられている。 Grinding of the back surface of the wafer is performed using a grinding apparatus (processing apparatus) described in, for example, Patent Documents 1 to 3. In addition to grinding means for grinding the back surface of the wafer, the grinding apparatus is provided with cleaning means for cleaning the surface of the wafer, the suction surface of the wafer on the transfer pad for transferring the wafer, and the like.
　例えば特許文献１には、ウェハの表面を洗浄する手段として、ウェハの表面にブラシを当接させて当該表面を洗浄する洗浄ブラシ機構と、洗浄ブラシ機構がウェハの表面に当接している際に当該表面に洗浄液を供給するブラシ洗浄液供給機構とを備えた洗浄手段が開示されている。例えば特許文献２にも、ウェハの表面を洗浄する手段として、ウェハの表面にブラシを当接させて当該表面を洗浄するブラシ洗浄装置が開示されている。 For example, in Patent Document 1, as a means for cleaning the surface of a wafer, a cleaning brush mechanism that abuts a brush on the surface of the wafer to clean the surface and a cleaning brush mechanism abuts the surface of the wafer. A cleaning means is disclosed comprising a brush cleaning solution supply mechanism for supplying a cleaning solution to the surface. For example, Patent Document 2 also discloses a brush cleaning apparatus that cleans the surface by bringing a brush into contact with the surface of the wafer as a means for cleaning the surface of the wafer.
　また、例えば特許文献３には、搬送パッドの吸着面を洗浄する手段として、吸着面に当接して当該吸着面を洗浄する洗浄ブラシを備えた洗浄手段が開示されている。 Further, for example, as a means for cleaning the suction surface of the transfer pad, Patent Document 3 discloses a washing means provided with a cleaning brush that is in contact with the suction surface to wash the suction surface.
日本国特開２０１１－６６１９８号公報Japan JP 2011-66198 日本国特開２００２－３４３７５６号公報Japanese Patent Application Laid-Open No. 2002-343756 日本国特開２００８－１８３６５９号公報Japanese Patent Application Laid-Open No. 2008-183659
　上述した特許文献１～３に開示された洗浄手段はそれぞれ、ウェハの表面又は搬送パッドの吸着面のいずれかを洗浄するものであるが、研削装置ではこれらを両方洗浄する場合があり、かかる場合、複数の洗浄手段が必要となる。また、ウェハの表面又は搬送パッドの吸着面のいずれかを、複数の洗浄手段で洗浄する場合もある。そして、このように研削装置に複数の洗浄手段を設ける場合、これら洗浄手段を設置するスペースが必要になるが、従来の研削装置にはこのようなスペースを確保することは考えられていない。したがって、従来の研削装置には改善の余地がある。 Although the cleaning means disclosed in Patent Documents 1 to 3 described above each cleans either the surface of the wafer or the suction surface of the transfer pad, there are cases where both of them may be cleaned by the grinding apparatus. , And multiple cleaning means are required. Further, there are also cases where either the surface of the wafer or the suction surface of the transfer pad is cleaned by a plurality of cleaning means. And, when a plurality of cleaning means are provided in the grinding apparatus as described above, a space for installing these cleaning means is required, but it is not considered to secure such a space in the conventional grinding apparatus. Therefore, there is room for improvement in the conventional grinding apparatus.
　本発明は、上記事情に鑑みてなされたものであり、複数の洗浄具を用いて被処理体を洗浄するにあたり、当該複数の洗浄具を備えた洗浄装置の省スペース化を図ることを目的とする。 The present invention has been made in view of the above circumstances, and it is an object of the present invention to achieve space saving of a cleaning device provided with a plurality of cleaning tools when cleaning an object to be processed using a plurality of cleaning tools. Do.
　上記課題を解決する本発明の一態様は、被処理体を洗浄する洗浄装置であって、前記被処理体の洗浄面の径方向を中心軸として回転する回転体と、前記回転体に設けられ、前記洗浄面を洗浄する複数の洗浄具と、を有し、前記複数の洗浄具は、前記回転体の表面において軸方向に延伸し、且つ当該回転体の周方向に並べて配置されている。 One aspect of the present invention which solves the above-mentioned subject is a washing device which washes a processed object, and is provided in the rotating body which rotates centering on the diameter direction of the washing side of the processed object as a central axis, And a plurality of cleaning tools for cleaning the cleaning surface, wherein the plurality of cleaning tools extend in the axial direction on the surface of the rotating body and are arranged side by side in the circumferential direction of the rotating body.
　別な観点による本発明の一態様は、被処理体を洗浄する洗浄方法であって、前記被処理体の洗浄面の径方向を中心軸として回転する回転体と、前記回転体の表面において軸方向に延伸し、且つ当該回転体の周方向に並べて配置された複数の洗浄具とを備えた洗浄装置を用い、前記被処理体に応じて前記複数の洗浄具のうち一の洗浄具を選択し、前記回転体を回転させて前記洗浄面に前記一の洗浄具を対向配置し、当該一の洗浄具を用いて前記洗浄面を洗浄する。 Another aspect of the present invention according to another aspect is a cleaning method for cleaning an object to be treated, comprising: a rotating body rotating around a radial direction of a cleaning surface of the object to be treated; and an axis on the surface of the rotating body A cleaning tool selected from among the plurality of cleaning tools according to the object to be treated, using a cleaning device provided with a plurality of cleaning tools extending in a direction and arranged in a circumferential direction of the rotating body Then, the rotating body is rotated to place the one cleaning tool opposite to the cleaning surface, and the one cleaning tool is used to clean the cleaning surface.
　また別な観点による本発明の一態様によれば、前記洗浄方法を洗浄装置によって実行させるように、当該洗浄装置を制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体である。 According to an aspect of the present invention according to another aspect, a readable computer storage medium storing a program operating on a computer of a control unit that controls the cleaning device to cause the cleaning device to execute the cleaning method. It is.
　本発明の一態様によれば、複数の洗浄具を用いて被処理体を洗浄するにあたり、一の回転体に複数の洗浄具を設けているので、当該複数の洗浄具を備えた洗浄装置の省スペース化を実現することができる。 According to one aspect of the present invention, in cleaning the object using a plurality of cleaning tools, since a plurality of cleaning tools are provided on one rotating body, a cleaning device provided with the plurality of cleaning tools Space saving can be realized.
第１の実施形態にかかる第２の洗浄ユニットを備えた基板処理システムの構成の概略を模式的に示す平面図である。It is a top view which shows typically the outline of a structure of the substrate processing system provided with the 2nd washing | cleaning unit concerning 1st Embodiment. ウェハの構成の概略を示す側面図である。It is a side view showing an outline of composition of a wafer. 第２の洗浄ユニットの内部構成の概略を示す平面図である。It is a top view which shows the outline of an internal structure of a 2nd washing | cleaning unit. 第２の洗浄ユニットの内部構成の概略を示す側面図である。It is a side view which shows the outline of an internal structure of a 2nd washing | cleaning unit. 洗浄機構の構成の概略を示す斜視図である。It is a perspective view which shows the outline of a structure of a washing | cleaning mechanism. ウェハ処理の主な工程を示すフローチャートである。It is a flowchart which shows the main process of wafer processing. 第２の洗浄ユニットでウェハの表面を洗浄する様子を示す説明図である。It is explanatory drawing which shows a mode that the surface of a wafer is wash | cleaned by a 2nd washing | cleaning unit. 第２の洗浄ユニットで搬送パッドの保持面を洗浄する様子を示す説明図である。It is explanatory drawing which shows a mode that the holding surface of a conveyance pad is wash | cleaned by a 2nd washing | cleaning unit. 第２の実施形態にかかる第２の洗浄ユニットの内部構成の概略を示す平面図である。It is a top view which shows the outline of an internal structure of the 2nd washing | cleaning unit concerning 2nd Embodiment. 第３の実施形態にかかる第２の洗浄ユニットの内部構成の概略を示す平面図である。It is a top view which shows the outline of an internal structure of the 2nd washing | cleaning unit concerning 3rd Embodiment. 第３の実施形態にかかる第２の洗浄ユニットでウェハの表面を洗浄する様子を示す説明図である。It is explanatory drawing which shows a mode that the surface of a wafer is wash | cleaned in the 2nd washing | cleaning unit concerning 3rd Embodiment. 第３の実施形態にかかる第２の洗浄ユニットで搬送パッドの保持面を洗浄する様子を示す説明図である。It is explanatory drawing which shows a mode that the holding | maintenance surface of a conveyance pad is wash | cleaned by the 2nd washing | cleaning unit concerning 3rd Embodiment.
　以下、本発明の実施形態について、図面を参照しながら説明する。なお、本明細書および図面において、実質的に同一の機能構成を有する要素においては、同一の符号を付することにより重複説明を省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration will be assigned the same reference numerals and redundant description will be omitted.
＜基板処理システム＞
　先ず、本実施形態にかかる基板処理システムの構成について説明する。図１は、基板処理システム１の構成の概略を模式的に示す平面図である。なお、以下においては、位置関係を明確にするために、互いに直交するＸ軸方向、Ｙ軸方向及びＺ軸方向を規定し、Ｚ軸正方向を鉛直上向き方向とする。 <Substrate processing system>
First, the configuration of a substrate processing system according to the present embodiment will be described. FIG. 1 is a plan view schematically showing the outline of the configuration of a substrate processing system 1. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to one another are defined, and the Z-axis positive direction is the vertically upward direction.
　本実施形態の基板処理システム１では、図２に示す、基板としてのウェハＷを薄化する。ウェハＷは、例えばシリコンウェハや化合物半導体ウェハなどの半導体ウェハである。ウェハＷの表面Ｗ１にはデバイス（図示せず）が形成されており、さらに当該表面Ｗ１にはデバイスを保護するための保護材、例えば保護テープＰが貼り付けられている。そして、ウェハＷの裏面Ｗ２に対して研削などの所定の処理が行われ、当該ウェハが薄化される。 In the substrate processing system 1 of the present embodiment, the wafer W as a substrate shown in FIG. 2 is thinned. The wafer W is, for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer. A device (not shown) is formed on the surface W1 of the wafer W, and a protective material for protecting the device, for example, a protective tape P is attached to the surface W1. Then, predetermined processing such as grinding is performed on the back surface W2 of the wafer W to thin the wafer.
　基板処理システム１は、処理前のウェハＷをカセットＣ内に収納し、複数のウェハＷをカセット単位で外部から基板処理システム１に搬入する搬入ステーション２と、処理後のウェハＷをカセットＣ内に収納し、複数のウェハＷをカセット単位で基板処理システム１から外部に搬出する搬出ステーション３と、ウェハＷに加工処理を行って薄化する加工装置４と、加工処理後のウェハＷの後処理を行う後処理装置５と、搬入ステーション２、加工装置４及び後処理装置５の間でウェハＷを搬送する搬送ステーション６と、を接続した構成を有している。搬入ステーション２、搬送ステーション６、及び加工装置４は、Ｘ軸負方向側においてＹ軸方向にこの順で並べて配置されている。搬出ステーション３と後処理装置５は、Ｘ軸正方向側においてＹ軸方向にこの順で並べて配置されている。 The substrate processing system 1 stores the wafer W before processing in the cassette C, and carries the plurality of wafers W into the substrate processing system 1 from the outside in cassette units from the outside, and the wafer W after processing in the cassette C And a processing apparatus 4 for processing and thinning the wafer W, and a post-processing wafer W. It has a configuration in which a post-processing device 5 for performing processing and a transfer station 6 for transferring the wafer W among the loading station 2, the processing device 4 and the post-processing device 5 are connected. The loading station 2, the transfer station 6, and the processing device 4 are arranged in this order in the Y-axis direction on the X-axis negative direction side. The unloading station 3 and the post-processing device 5 are arranged side by side in this order in the Y-axis direction on the X-axis positive direction side.
（搬入ステーション）
　搬入ステーション２には、カセット載置台１０が設けられている。図示の例では、カセット載置台１０には、複数、例えば２つのカセットＣをＸ軸方向に一列に載置自在になっている。 (Loading station)
A cassette mounting table 10 is provided at the loading station 2. In the illustrated example, a plurality of, for example, two cassettes C can be mounted on the cassette mounting table 10 in a row in the X-axis direction.
（搬出ステーション）
　搬出ステーション３も、搬入ステーション２と同様の構成を有している。搬出ステーション３にはカセット載置台２０が設けられ、カセット載置台２０には、例えば２つのカセットＣをＸ軸方向に一列に載置自在になっている。なお、搬入ステーション２と搬出ステーション３は１つの搬入出ステーションに統合されてもよく、かかる場合、搬入出ステーションには共通のカセット載置台が設けられる。 (Transportation station)
The unloading station 3 also has the same configuration as the loading station 2. A cassette mounting table 20 is provided at the unloading station 3, and for example, two cassettes C can be mounted on the cassette mounting table 20 in a row in the X-axis direction. The loading station 2 and the unloading station 3 may be integrated into one loading and unloading station, and in such a case, the loading and unloading station is provided with a common cassette mounting table.
（加工装置）
　加工装置４では、ウェハＷに対して研削や洗浄などの加工処理が行われる。加工装置４は、回転テーブル３０、搬送ユニット４０、アライメントユニット５０、第１の洗浄ユニット６０、第２の洗浄ユニット７０、粗研削ユニット８０、中研削ユニット９０、及び仕上研削ユニット１００を有している。 (Processing device)
In the processing device 4, processing such as grinding and cleaning is performed on the wafer W. The processing apparatus 4 includes a rotary table 30, a conveyance unit 40, an alignment unit 50, a first cleaning unit 60, a second cleaning unit 70, a rough grinding unit 80, a middle grinding unit 90, and a finish grinding unit 100. There is.
　回転テーブル３０は、回転機構（図示せず）によって回転自在に構成されている。回転テーブル３０上には、ウェハＷの表面Ｗ１を保護テープＰを介して吸着保持するチャック３１が４つ設けられている。チャック３１は、回転テーブル３０と同一円周上に均等、すなわち９０度毎に配置されている。４つのチャック３１は、回転テーブル３０が回転することにより、受渡位置Ａ０及び加工位置Ａ１～Ａ３に移動可能になっている。 The rotary table 30 is rotatably configured by a rotation mechanism (not shown). On the rotating table 30, four chucks 31 for attracting and holding the front surface W1 of the wafer W via the protective tape P are provided. The chucks 31 are arranged uniformly on the same circumference as the rotary table 30, that is, every 90 degrees. The four chucks 31 are movable to the delivery position A0 and the processing positions A1 to A3 by rotation of the rotary table 30.
　本実施形態では、受渡位置Ａ０は回転テーブル３０のＸ軸正方向側且つＹ軸負方向側の位置であり、当該受渡位置Ａ０のＹ軸負方向側には、シンク３３の内部に設けられた第２の洗浄ユニット７０、アライメントユニット５０及び第１の洗浄ユニット６０が並べて配置される。アライメントユニット５０と第１の洗浄ユニット６０は上方からこの順で積層されて配置される。第１の加工位置Ａ１は回転テーブル３０のＸ軸正方向側且つＹ軸正方向側の位置であり、粗研削ユニット８０が配置される。第２の加工位置Ａ２は回転テーブル３０のＸ軸負方向側且つＹ軸正方向側の位置であり、中研削ユニット９０が配置される。第３の加工位置Ａ３は回転テーブル３０のＸ軸負方向側且つＹ軸負方向側の位置であり、仕上研削ユニット１００が配置される。 In this embodiment, the delivery position A0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the rotary table 30, and is provided inside the sink 33 on the Y-axis negative direction side of the delivery position A0. The second cleaning unit 70, the alignment unit 50, and the first cleaning unit 60 are arranged side by side. The alignment unit 50 and the first cleaning unit 60 are stacked and arranged in this order from above. The first processing position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the rotary table 30, and the rough grinding unit 80 is disposed. The second processing position A2 is a position on the X axis negative direction side and the Y axis positive direction side of the rotary table 30, and the middle grinding unit 90 is disposed. The third processing position A3 is a position on the X axis negative direction side and the Y axis negative direction side of the rotary table 30, and the finish grinding unit 100 is disposed.
　チャック３１はチャックベース３２に保持されている。チャック３１及びチャックベース３２は、回転機構（図示せず）によって回転可能に構成されている。 The chuck 31 is held by a chuck base 32. The chuck 31 and the chuck base 32 are configured to be rotatable by a rotation mechanism (not shown).
　搬送ユニット４０は、複数、例えば３つのアーム４１～４３を備えた多関節型のロボットである。３つのアーム４１～４３は関節部（図示せず）によって接続され、これら関節部によって、第１のアーム４１と第２のアーム４２はそれぞれ基端部を中心に旋回自在に構成されている。３つのアーム４１～４３のうち、先端の第１のアーム４１には、ウェハＷを吸着保持する搬送パッド４４が取り付けられている。搬送パッド４４は、平面視においてウェハＷの径より長い径を備えた円形状を有し、ウェハＷの裏面Ｗ２を吸着保持する。また、搬送パッド４４は、第１のアーム４１に設けられた回転部（図示せず）によって、回転自在に構成されている。また、３つのアーム４１～４３のうち、基端の第３のアーム４３は、アーム４１～４３を鉛直方向に移動させる鉛直移動機構４５に取り付けられている。そして、かかる構成を備えた搬送ユニット４０は、受渡位置Ａ０、アライメントユニット５０、第１の洗浄ユニット６０、及び第２の洗浄ユニット７０に対して、ウェハＷを搬送できる。なお、本実施形態では第２の洗浄ユニット７０が、本発明における洗浄装置を構成している。 The transfer unit 40 is an articulated robot including a plurality of, for example, three arms 41 to 43. The three arms 41 to 43 are connected by joints (not shown), and by these joints, the first arm 41 and the second arm 42 are configured to be pivotable around their respective proximal ends. Of the three arms 41 to 43, a transfer pad 44 for holding the wafer W by suction is attached to the first arm 41 at the tip. The transfer pad 44 has a circular shape with a diameter longer than the diameter of the wafer W in plan view, and adsorbs and holds the back surface W2 of the wafer W. Further, the transport pad 44 is configured to be rotatable by a rotating portion (not shown) provided to the first arm 41. Further, among the three arms 41 to 43, the third arm 43 at the base end is attached to a vertical movement mechanism 45 for moving the arms 41 to 43 in the vertical direction. The transfer unit 40 having such a configuration can transfer the wafer W to the delivery position A0, the alignment unit 50, the first cleaning unit 60, and the second cleaning unit 70. In the present embodiment, the second cleaning unit 70 constitutes the cleaning device in the present invention.
　アライメントユニット５０では、研削処理前のウェハＷの水平方向の向きを調節する。例えばスピンチャック（図示せず）に保持されたウェハＷを回転させながら、検出部（図示せず）でウェハＷのノッチ部の位置を検出することで、当該ノッチ部の位置を調節してウェハＷの水平方向の向きを調節する。 The alignment unit 50 adjusts the horizontal direction of the wafer W before the grinding process. For example, while the wafer W held by the spin chuck (not shown) is rotated, the position of the notch of the wafer W is detected by detecting the position of the notch of the wafer W by the detection unit (not shown). Adjust the horizontal orientation of W.
　第１の洗浄ユニット６０では、研削処理後のウェハＷの裏面Ｗ２を洗浄し、より具体的にはスピン洗浄する。例えばスピンチャック（図示せず）に保持されたウェハＷを回転させながら、洗浄液ノズル（図示せず）からウェハＷの裏面Ｗ２に洗浄液を供給する。そうすると、供給された洗浄液は裏面Ｗ２上を拡散し、当該裏面Ｗ２が洗浄される。 In the first cleaning unit 60, the back surface W2 of the wafer W after the grinding process is cleaned, more specifically, spin-cleaned. For example, while rotating the wafer W held by a spin chuck (not shown), the cleaning liquid is supplied from the cleaning liquid nozzle (not shown) to the back surface W2 of the wafer W. Then, the supplied cleaning liquid diffuses on the back surface W2, and the back surface W2 is cleaned.
　第２の洗浄ユニット７０では、研削処理後のウェハＷが搬送パッド４４に保持された状態のウェハＷの表面Ｗ１、すなわち表面Ｗ１に貼り付けられた保護テープＰを洗浄するとともに、搬送パッド４４のウェハＷの保持面を洗浄する。なお、この第２の洗浄ユニット７０の構成は後述する。 The second cleaning unit 70 cleans the surface W1 of the wafer W in a state where the wafer W after the grinding processing is held by the transfer pad 44, that is, the protective tape P attached to the surface W1. The holding surface of the wafer W is cleaned. The configuration of the second cleaning unit 70 will be described later.
　粗研削ユニット８０では、ウェハＷの裏面Ｗ２を粗研削する。粗研削ユニット８０は、環状形状で回転自在な粗研削砥石（図示せず）を備えた粗研削部８１を有している。また、粗研削部８１は、支柱８２に沿って鉛直方向及び水平方向に移動可能に構成されている。そして、チャック３１に保持されたウェハＷの裏面Ｗ２を粗研削砥石に当接させた状態で、チャック３１と粗研削砥石をそれぞれ回転させることによって、ウェハＷの裏面Ｗ２を粗研削する。 In the rough grinding unit 80, the back surface W2 of the wafer W is roughly ground. The rough grinding unit 80 has a rough grinding portion 81 provided with a ring-shaped rotatable rough grinding wheel (not shown). In addition, the rough grinding portion 81 is configured to be movable in the vertical direction and the horizontal direction along the support 82. Then, while the back surface W2 of the wafer W held by the chuck 31 is in contact with the rough grinding wheel, the chuck 31 and the rough grinding wheel are respectively rotated to roughly grind the back surface W2 of the wafer W.
　中研削ユニット９０では、ウェハＷの裏面Ｗ２を中研削する。中研削ユニット９０は、環状形状で回転自在な中研削砥石（図示せず）を備えた中研削部９１を有している。また、中研削部９１は、支柱９２に沿って鉛直方向及び水平方向に移動可能に構成されている。なお、中研削砥石の砥粒の粒度は、粗研削砥石の砥粒の粒度より小さい。そして、チャック３１に保持されたウェハＷの裏面Ｗ２を中研削砥石に当接させた状態で、チャック３１と中研削砥石をそれぞれ回転させることによって、裏面Ｗ２を中研削する。 In the middle grinding unit 90, the back surface W2 of the wafer W is middle ground. The middle grinding unit 90 has a middle grinding portion 91 having an annular shape and a rotatable middle grinding wheel (not shown). The middle grinding portion 91 is configured to be movable in the vertical direction and the horizontal direction along the support 92. The grain size of the abrasive grains of the medium grinding wheel is smaller than the grain size of the abrasive grains of the rough grinding stone. Then, while the back surface W2 of the wafer W held by the chuck 31 is in contact with the middle grinding stone, the chuck 31 and the middle grinding wheel are respectively rotated to middle grind the back surface W2.
　仕上研削ユニット１００では、ウェハＷの裏面Ｗ２を仕上研削する。仕上研削ユニット１００は、環状形状で回転自在な仕上研削砥石（図示せず）を備えた仕上研削部１０１を有している。また、仕上研削部１０１は、支柱１０２に沿って鉛直方向及び水平方向に移動可能に構成されている。なお、仕上研削砥石の砥粒の粒度は、中研削砥石の砥粒の粒度より小さい。そして、チャック３１に保持されたウェハＷの裏面Ｗ２を仕上研削砥石に当接させた状態で、チャック３１と仕上研削砥石をそれぞれ回転させることによって、裏面Ｗ２を仕上研削する。 In the finish grinding unit 100, the back surface W2 of the wafer W is finish ground. The finish grinding unit 100 has a finish grinding portion 101 provided with a ring-shaped rotatable finish grinding wheel (not shown). The finish grinding unit 101 is configured to be movable in the vertical direction and the horizontal direction along the support 102. The grain size of the abrasive grains of the finish grinding wheel is smaller than the grain size of the abrasive grains of the medium grinding wheel. Then, while the back surface W2 of the wafer W held by the chuck 31 is in contact with the finish grinding wheel, the back surface W2 is finish ground by rotating the chuck 31 and the finish grinding wheel respectively.
（後処理装置）
　後処理装置５では、加工装置４で加工処理されたウェハＷに対して後処理が行われる。後処理としては、例えばウェハＷをダイシングテープを介してダイシングフレームに保持するマウント処理、ウェハＷに貼り付けられた保護テープＰを剥離する剥離処理などが行われる。そして、後処理装置５は、後処理が行われダイシングフレームに保持されたウェハＷを搬出ステーション３のカセットＣに搬送する。後処理装置５で行われるマウント処理や剥離処理はそれぞれ、公知の装置が用いられる。 (Post-processing device)
In the post-processing apparatus 5, post-processing is performed on the wafer W processed by the processing apparatus 4. As the post-processing, for example, a mounting process of holding the wafer W on the dicing frame through the dicing tape, a peeling process of peeling the protective tape P attached to the wafer W, and the like are performed. Then, the post-processing apparatus 5 carries the post-processing and carries the wafer W held by the dicing frame to the cassette C of the unloading station 3. A known device is used for the mounting process and the peeling process performed by the post-processing device 5 respectively.
（搬送ステーション）
　搬送ステーション６には、ウェハ搬送領域１１０が設けられている。ウェハ搬送領域１１０には、Ｘ軸方向に延伸する搬送路１１１上を移動自在なウェハ搬送装置１１２が設けられている。ウェハ搬送装置１１２は、ウェハＷを保持するウェハ保持部として、搬送フォーク１１３と搬送パッド１１４を有している。搬送フォーク１１３は、その先端が２本に分岐し、ウェハＷを吸着保持する。搬送フォーク１１３は、研削処理前のウェハＷを搬送する。搬送パッド１１４は、平面視においてウェハＷの径より長い径を備えた円形状を有し、ウェハＷを吸着保持する。搬送パッド１１４は、研削処理後のウェハＷを搬送する。そして、これら搬送フォーク１１３と搬送パッド１１４はそれぞれ、水平方向、鉛直方向、水平軸回り及び鉛直軸周りに移動自在に構成されている。 (Transport station)
The transfer station 6 is provided with a wafer transfer area 110. In the wafer transfer area 110, a wafer transfer apparatus 112 movable on the transfer path 111 extending in the X-axis direction is provided. The wafer transfer apparatus 112 has a transfer fork 113 and a transfer pad 114 as a wafer holding unit for holding the wafer W. The tip of the transfer fork 113 is branched into two, and the wafer W is held by suction. The transfer fork 113 transfers the wafer W before the grinding process. The transfer pad 114 has a circular shape with a diameter longer than that of the wafer W in plan view, and holds the wafer W by suction. The transfer pad 114 transfers the wafer W after the grinding process. The transfer fork 113 and the transfer pad 114 are configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis, respectively.
（制御部）
　基板処理システム１には、制御部１２０が設けられている。制御部１２０は、例えばコンピュータであり、プログラム格納部（図示せず）を有している。プログラム格納部には、基板処理システム１におけるウェハＷの処理を制御するプログラムが格納されている。また、プログラム格納部には、上述の各種処理装置や搬送装置などの駆動系の動作を制御して、基板処理システム１における後述のウェハ処理を実現させるためのプログラムも格納されている。なお、前記プログラムは、例えばコンピュータ読み取り可能なハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディク（ＣＤ）、マグネットオプティカルデスク（ＭＯ）、メモリーカードなどのコンピュータに読み取り可能な記憶媒体Ｈに記録されていたものであって、その記憶媒体Ｈから制御部１２０にインストールされたものであってもよい。 (Control unit)
The substrate processing system 1 is provided with a control unit 120. The control unit 120 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1. The program storage unit also stores a program for realizing the below-described wafer processing in the substrate processing system 1 by controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses. The program is recorded on a computer readable storage medium H such as a computer readable hard disk (HD), a flexible disk (FD), a compact disc (CD), a magnet optical desk (MO), a memory card, etc. It may be one that has been installed in the control unit 120 from the storage medium H.
＜第１の実施形態＞
　次に、上述した加工装置４の第２の洗浄ユニット７０の構成について説明する。図３及び図４に示すように第２の洗浄ユニット７０は、処理容器２００を有している。処理容器２００の側面には、搬送ユニット４０の搬送パッド４４と、搬送パッド４４に保持されたウェハＷが搬入及び搬出される搬入出口２０１が形成されている。また、搬入出口２０１には開閉シャッタ（図せず）が設けられている。 First Embodiment
Next, the configuration of the second cleaning unit 70 of the processing apparatus 4 described above will be described. As shown in FIG. 3 and FIG. 4, the second cleaning unit 70 has a processing container 200. On the side surface of the processing container 200, a transfer pad 44 of the transfer unit 40 and a loading / unloading port 201 to which the wafer W held by the transfer pad 44 is loaded and unloaded are formed. Further, the loading / unloading port 201 is provided with an open / close shutter (not shown).
　なお、図示の例においては、処理容器２００は筐体であったが、処理容器２００の形状はこれに限定されない。例えば処理容器２００の上面が開口し、搬入出口２０１が省略された形状を有していてもよい。また、処理容器２００自体を省略してもよい。かかる場合、後述する洗浄機構２１０、回転機構２２０及び洗浄液槽２３０はそれぞれ、シンク３３の内部に設けられる。 In the illustrated example, the processing container 200 is a housing, but the shape of the processing container 200 is not limited to this. For example, the upper surface of the processing container 200 may be open, and the loading / unloading port 201 may be omitted. Further, the processing container 200 itself may be omitted. In such a case, the cleaning mechanism 210, the rotation mechanism 220, and the cleaning liquid tank 230, which will be described later, are respectively provided inside the sink 33.
　処理容器２００の内部には、ウェハＷの表面Ｗ１（保護テープＰ）と搬送パッド４４のウェハＷの保持面４４ａを洗浄する洗浄機構２１０、洗浄機構２１０を回転させる回転機構２２０、及びウェハＷの表面Ｗ１の洗浄液を貯留する洗浄液槽２３０が設けられている。なお、本実施形態では、ウェハＷと搬送パッド４４が本発明の被処理体を構成し、表面Ｗ１と保持面４４ａが本発明の洗浄面を構成している。 Inside the processing vessel 200, a cleaning mechanism 210 for cleaning the surface W1 (protective tape P) of the wafer W and the holding surface 44a of the wafer W for the transfer pad 44, a rotation mechanism 220 for rotating the cleaning mechanism 210, and A cleaning solution tank 230 for storing the cleaning solution on the surface W1 is provided. In the present embodiment, the wafer W and the transfer pad 44 constitute the object of the present invention, and the surface W1 and the holding surface 44a constitute the cleaning surface of the present invention.
　図４に示すように洗浄機構２１０は、回転体２１１の表面に複数、例えば４つの洗浄具２１２～２１５が取り付けられた構成を有している。回転体２１１は、ウェハＷの表面Ｗ１の径方向（Ｘ軸方向）であって搬送パッド４４の保持面４４ａの径方向（Ｘ軸方向）を中心軸として回転する。また、回転体２１１は、例えば直方体形状を有している。 As shown in FIG. 4, the cleaning mechanism 210 has a configuration in which a plurality of, for example, four cleaning tools 212 to 215 are attached to the surface of the rotating body 211. The rotating body 211 rotates about the central axis in the radial direction (X-axis direction) of the surface W1 of the wafer W and the radial direction (X-axis direction) of the holding surface 44a of the transfer pad 44. Further, the rotating body 211 has, for example, a rectangular parallelepiped shape.
　図３及び図４に示すように洗浄機構２１０（回転体２１１）は、回転機構２２０に取り付けられている。回転機構２２０は、回転体２１１の軸方向（Ｘ軸方向）の両端部に接続されたシャフト２２１、一方のシャフト２２１に設けられ回転体２１１を回転させる駆動部２２２、及び他方のシャフト２２１に設けられ回転体２１１を支持する支持部２２３を有している。駆動部２２２は、例えばアクチュエータ（図示せず）を内蔵し、シャフト２２１を介して回転体２１１を回転させることができる。 As shown in FIGS. 3 and 4, the cleaning mechanism 210 (rotary body 211) is attached to the rotating mechanism 220. The rotation mechanism 220 is provided on a shaft 221 connected to both ends in the axial direction (X-axis direction) of the rotating body 211, a driving unit 222 provided on one shaft 221 for rotating the rotating body 211, and the other shaft 221 And a supporting portion 223 for supporting the rotating body 211. The drive unit 222 incorporates, for example, an actuator (not shown), and can rotate the rotating body 211 via the shaft 221.
　図５に示すように４つの洗浄具２１２～２１５は、基板洗浄具としてのスポンジ洗浄具２１２、基板乾燥具としてのエア洗浄具２１３、パッド洗浄具としてのストーン洗浄具２１４、及びパッド洗浄具としてのブラシ洗浄具２１５を有している。これら洗浄具２１２～２１５はそれぞれ、回転体２１１の表面において軸方向（Ｘ軸方向）に延伸している。また、洗浄具２１２～２１５は回転体２１１の４つの表面に設けられ、すなわち回転体２１１の周方向に並べて配置されている。 As shown in FIG. 5, the four cleaning tools 212 to 215 are a sponge cleaning tool 212 as a substrate cleaning tool, an air cleaning tool 213 as a substrate drying tool, a stone cleaning tool 214 as a pad cleaning tool, and a pad cleaning tool. The brush cleaner 215 of The cleaning tools 212 to 215 extend in the axial direction (X-axis direction) on the surface of the rotating body 211, respectively. The cleaning tools 212 to 215 are provided on the four surfaces of the rotating body 211, that is, arranged in the circumferential direction of the rotating body 211.
　スポンジ洗浄具２１２は、ウェハＷの表面Ｗ１（保護テープＰ）を洗浄する。スポンジ洗浄具２１２は、例えば表面Ｗ１の径よりも長く延伸するスポンジを有している。スポンジ洗浄具２１２には、図３及び図４に示す洗浄液槽２３０によって洗浄液、例えば純水が供給されるようになっている。そして、スポンジ洗浄具２１２は、そのスポンジが洗浄液を含んでおり、ウェハＷの表面Ｗ１に洗浄液を供給しつつ接触して、当該表面Ｗ１を洗浄する。 The sponge cleaning tool 212 cleans the surface W1 (protective tape P) of the wafer W. The sponge cleaner 212 has, for example, a sponge which is stretched longer than the diameter of the surface W1. A cleaning solution, for example, pure water, is supplied to the sponge cleaning tool 212 by a cleaning solution tank 230 shown in FIGS. 3 and 4. Then, the sponge includes the cleaning liquid, and the sponge cleaning tool 212 contacts the surface W1 of the wafer W while supplying the cleaning liquid to clean the surface W1.
　洗浄液槽２３０は、洗浄機構２１０の下方に設けられている。洗浄液槽２３０には、洗浄液槽２３０の内部に洗浄液を供給する給液部２３１と、洗浄液槽２３０の内部の洗浄液を排出する排液部２３２とが接続されている。そして、給液部２３１から洗浄液を供給しつつ、排液部２３２から洗浄液を排出して、洗浄液槽２３０の内部には常時、洗浄液が貯留されている。なお、洗浄液槽２３０の上面から洗浄液をオーバーフローさせて、常時、洗浄液槽２３０の内部の洗浄液を排出させてもよい。 The cleaning solution tank 230 is provided below the cleaning mechanism 210. The cleaning solution tank 230 is connected to a liquid supply unit 231 that supplies the cleaning solution to the inside of the cleaning solution tank 230 and a drainage unit 232 that discharges the cleaning solution inside the cleaning solution tank 230. Then, while the cleaning liquid is supplied from the liquid supply unit 231, the cleaning liquid is discharged from the drainage section 232, and the cleaning liquid is constantly stored in the cleaning liquid tank 230. The cleaning liquid may overflow from the upper surface of the cleaning liquid tank 230 and the cleaning liquid in the cleaning liquid tank 230 may be discharged at all times.
　また、洗浄液槽２３０は、昇降機構２３３によって昇降自在に構成されている。なお、洗浄液槽２３０と回転体２１１（スポンジ洗浄具２１２）は相対的に昇降できればよく、回転体２１１を昇降自在に構成してもよいし、あるいは洗浄液槽２３０と回転体２１１の両方を昇降自在に構成してもよい。また、洗浄液槽２３０と回転体２１１のそれぞれを固定してもよい。かかる場合、洗浄液槽２３０に貯留された洗浄液により常に、回転体２１１に設けられた洗浄具２１２～２１５を洗浄しながら、ウェハＷや搬送パッド４４の被処理体を洗浄することが可能となる。 In addition, the cleaning solution tank 230 is configured to be able to move up and down by the lifting mechanism 233. The cleaning fluid tank 230 and the rotating body 211 (sponge washing tool 212) may be moved up and down relative to each other. The rotating body 211 may be configured to be movable up and down. Alternatively, both the cleaning fluid tank 230 and the rotating body 211 may be lifted and lowered. You may configure it. In addition, the cleaning solution tank 230 and the rotating body 211 may be fixed. In such a case, it is possible to clean the object to be processed of the wafer W and the transfer pad 44 while always cleaning the cleaning tools 212 to 215 provided on the rotating body 211 by the cleaning solution stored in the cleaning solution tank 230.
　かかる場合、スポンジ洗浄具２１２でウェハＷの表面Ｗ１を洗浄する際には、先ず、スポンジ洗浄具２１２を回転体２１１の下面に位置させた状態で洗浄液槽２３０を上昇させて、スポンジ洗浄具２１２を洗浄液に浸漬させる。これにより、スポンジ洗浄具２１２に洗浄液が供給される。その後、回転体２１１を回転させ、洗浄液を含んだスポンジ洗浄具２１２を回転体２１１の上面に配置した状態で、当該スポンジ洗浄具２１２をウェハＷの表面Ｗ１に当接させる。この状態で搬送パッド４４によりウェハＷを回転させながら、表面Ｗ１に洗浄液を供給しつつ、スポンジ洗浄具２１２を表面Ｗ１に当接させることで、表面Ｗ１の全面が洗浄される。 In this case, when the front surface W1 of the wafer W is cleaned by the sponge cleaning tool 212, first, the cleaning solution tank 230 is raised while the sponge cleaning tool 212 is positioned on the lower surface of the rotating body 211. Immerse in the cleaning solution. Thereby, the cleaning liquid is supplied to the sponge cleaning tool 212. Thereafter, the rotating body 211 is rotated, and the sponge cleaning tool 212 is brought into contact with the surface W1 of the wafer W in a state where the sponge cleaning tool 212 including the cleaning liquid is disposed on the upper surface of the rotating body 211. In this state, while the wafer W is rotated by the transfer pad 44, the sponge cleaning tool 212 is brought into contact with the surface W1 while the cleaning liquid is supplied to the surface W1, whereby the entire surface W1 is cleaned.
　エア洗浄具２１３は、スポンジ洗浄具２１２で洗浄されたウェハＷの表面Ｗ１を乾燥させる。具体的には、図５に示すようにエア洗浄具２１３は、例えば表面Ｗ１にエアを噴射するノズル２１３ａを有している。そして、回転体２１１を回転させ、エア洗浄具２１３を回転体２１１の上面に配置する。その後、搬送パッド４４によりウェハＷを回転させながら、エア洗浄具２１３のノズル２１３ａから表面Ｗ１にエアを噴射することで、表面Ｗ１の全面が乾燥される。なお、図示の例では、ノズル２１３ａは円形状を有していたが、ノズル２１３ａの形状はこれに限定されない。例えばノズルは、エア洗浄具２１３の長手方向（Ｘ軸方向）に延伸するスリット形状を有していてもよい。 The air cleaner 213 dries the surface W 1 of the wafer W cleaned by the sponge cleaner 212. Specifically, as shown in FIG. 5, the air cleaner 213 has, for example, a nozzle 213a that jets air to the surface W1. Then, the rotating body 211 is rotated, and the air cleaning tool 213 is disposed on the upper surface of the rotating body 211. Thereafter, while the wafer W is rotated by the transfer pad 44, air is jetted from the nozzle 213a of the air cleaning tool 213 to the surface W1, whereby the entire surface W1 is dried. Although the nozzle 213a has a circular shape in the illustrated example, the shape of the nozzle 213a is not limited to this. For example, the nozzle may have a slit shape extending in the longitudinal direction (X-axis direction) of the air cleaner 213.
　ストーン洗浄具２１４は、搬送パッド４４の保持面４４ａを洗浄する。ストーン洗浄具２１４は、例えば保持面４４ａの径よりも長く延伸する砥石を有している。そして、回転体２１１を回転させ、ストーン洗浄具２１４を回転体２１１の上面に配置する。その後、搬送パッド４４によりウェハＷを回転させながら、ストーン洗浄具２１４を保持面４４ａに当接させることで、保持面４４ａの全面が洗浄される。 The stone cleaning tool 214 cleans the holding surface 44 a of the transfer pad 44. The stone cleaning tool 214 has, for example, a grindstone that extends longer than the diameter of the holding surface 44a. Then, the rotating body 211 is rotated, and the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211. Thereafter, while the wafer W is rotated by the transfer pad 44, the entire surface of the holding surface 44a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44a.
　ブラシ洗浄具２１５は、搬送パッド４４の保持面４４ａを洗浄する。ブラシ洗浄具２１５は、例えば保持面４４ａの径よりも長く延伸するブラシを有している。そして、回転体２１１を回転させ、ブラシ洗浄具２１５を回転体２１１の上面に配置する。その後、搬送パッド４４によりウェハＷを回転させながら、ブラシ洗浄具２１５を保持面４４ａに当接させることで、保持面４４ａの全面が洗浄される。 The brush cleaner 215 cleans the holding surface 44 a of the transfer pad 44. The brush cleaner 215 has, for example, a brush that extends longer than the diameter of the holding surface 44a. Then, the rotating body 211 is rotated, and the brush cleaning tool 215 is disposed on the upper surface of the rotating body 211. Thereafter, while the wafer W is rotated by the transfer pad 44, the entire surface of the holding surface 44a is cleaned by bringing the brush cleaning tool 215 into contact with the holding surface 44a.
＜ウェハ処理＞
　次に、以上のように構成された基板処理システム１を用いて行われるウェハ処理について説明する。 <Wafer processing>
Next, wafer processing performed using the substrate processing system 1 configured as described above will be described.
　先ず、複数のウェハＷを収納したカセットＣが、搬入ステーション２のカセット載置台１０に載置される。カセットＣ内には、保護テープが変形するのを抑制するため、当該保護テープが貼り付けられたウェハＷの表面が上側を向くようにウェハＷが収納されている。 First, a cassette C containing a plurality of wafers W is placed on the cassette mounting table 10 of the loading station 2. In the cassette C, in order to suppress the deformation of the protective tape, the wafer W is stored so that the surface of the wafer W to which the protective tape is attached is directed upward.
　次に、ウェハ搬送装置１１２の搬送フォーク１１３によりカセットＣ内のウェハＷが取り出され、加工装置４に搬送される。この際、搬送フォーク１１３によりウェハＷの裏面が上側に向くように、表裏面が反転される。 Next, the wafer W in the cassette C is taken out by the transfer fork 113 of the wafer transfer apparatus 112 and transferred to the processing apparatus 4. At this time, the front and back surfaces are reversed such that the back surface of the wafer W is directed upward by the transfer fork 113.
　加工装置４に搬送されたウェハＷは、アライメントユニット５０に受け渡される。そして、アライメントユニット５０において、ウェハＷの水平方向の向きが調節される（図６のステップＳ１）。 The wafer W transferred to the processing apparatus 4 is delivered to the alignment unit 50. Then, in the alignment unit 50, the horizontal direction of the wafer W is adjusted (step S1 in FIG. 6).
　次に、ウェハＷは搬送ユニット４０により、アライメントユニット５０から受渡位置Ａ０に搬送され、当該受渡位置Ａ０のチャック３１に受け渡される。チャック３１では、ウェハＷの表面Ｗ１が保持される。その後、チャック３１を第１の加工位置Ａ１に移動させる。そして、粗研削ユニット８０によって、ウェハＷの裏面Ｗ２が粗研削される（図６のステップＳ２）。 Next, the wafer W is transported by the transport unit 40 from the alignment unit 50 to the delivery position A0 and delivered to the chuck 31 at the delivery position A0. The chuck 31 holds the surface W1 of the wafer W. Thereafter, the chuck 31 is moved to the first processing position A1. Then, the back surface W2 of the wafer W is roughly ground by the rough grinding unit 80 (step S2 in FIG. 6).
　次に、チャック３１を第２の加工位置Ａ２に移動させる。そして、中研削ユニット９０によって、ウェハＷの裏面Ｗ２が中研削される（図６のステップＳ３）。 Next, the chuck 31 is moved to the second processing position A2. Then, the back surface W2 of the wafer W is internally ground by the middle grinding unit 90 (step S3 in FIG. 6).
　次に、チャック３１を第３の加工位置Ａ３に移動させる。そして、仕上研削ユニット１００によって、ウェハＷの裏面Ｗ２が仕上研削される（図６のステップＳ４）。 Next, the chuck 31 is moved to the third processing position A3. Then, the back surface W2 of the wafer W is finish ground by the finish grinding unit 100 (step S4 in FIG. 6).
　次に、チャック３１を受渡位置Ａ０に移動させる。ここでは、洗浄液ノズル（図示せず）を用いて、ウェハＷの裏面Ｗ２が洗浄液によって粗洗浄される（図６のステップＳ５）。このステップＳ６では、裏面Ｗ２の汚れをある程度まで落とす洗浄が行われる。 Next, the chuck 31 is moved to the delivery position A0. Here, the back surface W2 of the wafer W is roughly cleaned by the cleaning liquid using the cleaning liquid nozzle (not shown) (step S5 in FIG. 6). In this step S6, cleaning is performed to remove the dirt on the back surface W2 to a certain extent.
　次に、ウェハＷは搬送ユニット４０により、受渡位置Ａ０から第２の洗浄ユニット７０に搬送される。第２の洗浄ユニット７０では、先ず、図７（ａ）に示すようにスポンジ洗浄具２１２を回転体２１１の下面に位置させた状態で洗浄液槽２３０を上昇させて、スポンジ洗浄具２１２を洗浄液Ｌに浸漬させる。これにより、スポンジ洗浄具２１２に洗浄液Ｌが供給される。その後、図７（ｂ）に示すように回転体２１１を回転させ、洗浄液Ｌを含んだスポンジ洗浄具２１２を回転体２１１の上面に配置した状態、すなわちスポンジ洗浄具２１２をウェハＷの表面Ｗ１に対向配置した状態で、当該スポンジ洗浄具２１２を表面Ｗ１に当接させる。そして、搬送パッド４４によりウェハＷを回転させながら、表面Ｗ１に洗浄液を供給しつつ、スポンジ洗浄具２１２を表面Ｗ１に当接させることで、表面Ｗ１（保護テープＰ）の全面が洗浄される（図６のステップＳ６）。 Next, the wafer W is transferred by the transfer unit 40 from the delivery position A0 to the second cleaning unit 70. In the second cleaning unit 70, first, as shown in FIG. 7A, with the sponge cleaning tool 212 positioned on the lower surface of the rotating body 211, the cleaning solution tank 230 is raised to clean the sponge cleaning tool 212. Immerse in As a result, the cleaning liquid L is supplied to the sponge cleaning tool 212. Thereafter, as shown in FIG. 7B, the rotating body 211 is rotated, and the sponge cleaning tool 212 including the cleaning liquid L is disposed on the upper surface of the rotating body 211, ie, the sponge cleaning tool 212 is attached to the surface W1 of the wafer W. The sponge cleaning tool 212 is brought into contact with the surface W1 in the state of being arranged opposite to each other. Then, while the cleaning liquid is supplied to the surface W1 while the wafer W is being rotated by the transfer pad 44, the sponge cleaning tool 212 is brought into contact with the surface W1 to clean the entire surface W1 (protective tape P) Step S6 in FIG.
　その後、図７（ｃ）に示すように回転体２１１を回転させ、エア洗浄具２１３を回転体２１１の上面に配置するとともに、搬送パッド４４によりウェハＷを上昇させる。そして、エア洗浄具２１３をウェハＷの表面Ｗ１に対向配置した状態で、搬送パッド４４によりウェハＷを回転させながら、エア洗浄具２１３から表面Ｗ１にエアを噴射することで、表面Ｗ１の全面が乾燥される（図６のステップＳ７）。 Thereafter, as shown in FIG. 7C, the rotating body 211 is rotated, the air cleaning tool 213 is disposed on the upper surface of the rotating body 211, and the wafer W is lifted by the transfer pad 44. Then, in a state where the air cleaning tool 213 is disposed to face the surface W1 of the wafer W, the air cleaning tool 213 jets air to the surface W1 while rotating the wafer W by the transfer pad 44, whereby the entire surface W1 is obtained. It is dried (step S7 of FIG. 6).
　これらステップＳ６、Ｓ７においてウェハＷが搬送パッド４４に保持される前に、搬送パッド４４は、第２の洗浄ユニット７０のストーン洗浄具２１４とブラシ洗浄具２１５を用いて洗浄されている（図６のステップＴ１）。具体的には、図８（ａ）に示すようにストーン洗浄具２１４を回転体２１１の上面に配置した状態、すなわちストーン洗浄具２１４を搬送パッド４４の保持面４４ａに対向配置した状態で、搬送パッド４４によりウェハＷを回転させながら、ストーン洗浄具２１４を保持面４４ａに当接させることで、保持面４４ａの全面が洗浄される。また、図８（ｂ）に示すようにブラシ洗浄具２１５を回転体２１１の上面に配置した状態、すなわちブラシ洗浄具２１５を保持面４４ａに対向配置した状態で、搬送パッド４４によりウェハＷを回転させながら、ブラシ洗浄具２１５を保持面４４ａに当接させることで、保持面４４ａの全面が洗浄される。 Before the wafer W is held by the transfer pad 44 in these steps S6 and S7, the transfer pad 44 is cleaned using the stone cleaner 214 and the brush cleaner 215 of the second cleaning unit 70 (FIG. 6). Step T1). Specifically, as shown in FIG. 8A, the state in which the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211, that is, the state in which the stone cleaning tool 214 is disposed opposite to the holding surface 44a of the transport pad 44 The entire surface of the holding surface 44 a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44 a while rotating the wafer W by the pad 44. Further, as shown in FIG. 8B, the wafer W is rotated by the transfer pad 44 in a state where the brush cleaning tool 215 is disposed on the upper surface of the rotating body 211, that is, a state where the brush cleaning tool 215 is disposed opposite to the holding surface 44a. By bringing the brush cleaning tool 215 into contact with the holding surface 44a while cleaning, the entire surface of the holding surface 44a is cleaned.
　なお、搬送パッド４４の洗浄は、ストーン洗浄具２１４とブラシ洗浄具２１５のいずれか一方で行われてもよいし、あるいは両方で行われてもよい。また、搬送パッド４４の洗浄は、ステップＳ６までの任意のタイミングで行われる。 In addition, the cleaning of the transfer pad 44 may be performed by either the stone cleaning tool 214 or the brush cleaning tool 215, or may be performed by both. Further, the cleaning of the transfer pad 44 is performed at any timing up to step S6.
　次に、ウェハＷは搬送ユニット４０により、第２の洗浄ユニット７０から第１の洗浄ユニット６０に搬送される。そして、第１の洗浄ユニット６０では、洗浄液ノズル（図示せず）を用いて、ウェハＷの裏面Ｗ２が洗浄液によって仕上洗浄される（図６のステップＳ８）。このステップＳ８では、裏面Ｗ２が所望の清浄度まで洗浄し乾燥される。 Next, the wafer W is transferred by the transfer unit 40 from the second cleaning unit 70 to the first cleaning unit 60. Then, in the first cleaning unit 60, the back surface W2 of the wafer W is finish-cleaned by the cleaning liquid using the cleaning liquid nozzle (not shown) (step S8 in FIG. 6). In this step S8, the back surface W2 is washed and dried to a desired cleanliness.
　その後、ウェハＷはウェハ搬送装置１１２によって、第１の洗浄ユニット６０から後処理装置５に搬送される。そして、後処理装置５では、ウェハＷをダイシングフレームに保持するマウント処理や、ウェハＷに貼り付けられた保護テープＰを剥離する剥離処理などの後処理が行われる（図６のステップＳ９）。 Thereafter, the wafer W is transferred by the wafer transfer device 112 from the first cleaning unit 60 to the post-processing device 5. Then, in the post-processing apparatus 5, post-processing such as mounting processing for holding the wafer W on the dicing frame and peeling processing for peeling the protective tape P attached to the wafer W is performed (Step S9 in FIG. 6).
　その後、すべての処理が施されたウェハＷは、搬出ステーション３のカセット載置台２０のカセットＣに搬送される。こうして、基板処理システム１における一連のウェハ処理が終了する。 Thereafter, the wafer W subjected to all the processes is transferred to the cassette C of the cassette mounting table 20 of the unloading station 3. Thus, a series of wafer processing in the substrate processing system 1 is completed.
　以上の実施形態のとおり、第２の洗浄ユニット７０では、ウェハＷの表面Ｗ１と搬送パッド４４の保持面４４ａを洗浄するに際し、複数の洗浄具２１２～２１５が必要になる。かかる場合であっても、本実施形態の洗浄機構２１０のように、複数の洗浄具２１２～２１５が回転体２１１の表面に取り付けられているので、第２の洗浄ユニット７０の省スペース化を実現することができる。しかも、回転体２１１を回転させるだけで、適切な洗浄具２１２～２１５を選択することができ、ウェハＷの表面Ｗ１又は搬送パッド４４の保持面４４ａを適切に洗浄することができる。 As described above, in the second cleaning unit 70, when cleaning the front surface W1 of the wafer W and the holding surface 44a of the transfer pad 44, a plurality of cleaning tools 212 to 215 are required. Even in such a case, as in the cleaning mechanism 210 of the present embodiment, since the plurality of cleaning tools 212 to 215 are attached to the surface of the rotating body 211, space saving of the second cleaning unit 70 is realized. can do. In addition, the appropriate cleaning tools 212 to 215 can be selected only by rotating the rotating body 211, and the surface W1 of the wafer W or the holding surface 44a of the transfer pad 44 can be appropriately cleaned.
　また、本実施形態のように第２の洗浄ユニット７０において、洗浄機構２１０は搬入出口２０１からＸ軸方向に延伸するように配置されている。ここで、例えば４つの洗浄具２１２～２１５を平面視において並べて配置した場合、第２の洗浄ユニット７０の占有面積は大きくなるが、本実施形態によれば、第２の洗浄ユニット７０の占有面積を小さくすることができる。なお、洗浄機構２１０はＹ軸方向に延伸して配置されていてもよい。 Further, as in the present embodiment, in the second cleaning unit 70, the cleaning mechanism 210 is disposed so as to extend in the X-axis direction from the loading / unloading port 201. Here, for example, when the four cleaning tools 212 to 215 are arranged side by side in plan view, the occupied area of the second cleaning unit 70 is increased, but according to the present embodiment, the occupied area of the second cleaning unit 70 Can be made smaller. The cleaning mechanism 210 may be arranged so as to extend in the Y-axis direction.
＜第２の実施形態＞
　以上の実施形態において、第２の洗浄ユニット７０の構成は上述に限定されるものではない。 Second Embodiment
In the above embodiment, the configuration of the second cleaning unit 70 is not limited to the above.
　以上の実施形態の洗浄機構２１０において、回転体２１１は直方体形状を有していたが、回転体２１１の形状はこれに限定されない。例えば回転体２１１は三角柱形状を有し、回転体２１１の表面にはスポンジ洗浄具２１２、ストーン洗浄具２１４、及びブラシ洗浄具２１５が設けられていてもよい。かかる場合、図９に示すようにエア洗浄具２１３は、洗浄機構２１０の搬入出口２０１側において、Ｙ軸方向に延伸するように配置される。そして、搬送パッド４４に保持されたウェハＷがエア洗浄具２１３を通過する際に、エア洗浄具２１３から表面Ｗ１にエアが噴射され、当該表面Ｗ１が乾燥される。 In the cleaning mechanism 210 of the above embodiment, the rotary body 211 has a rectangular parallelepiped shape, but the shape of the rotary body 211 is not limited to this. For example, the rotator 211 may have a triangular prism shape, and the sponge cleaner 212, the stone cleaner 214, and the brush cleaner 215 may be provided on the surface of the rotator 211. In such a case, as shown in FIG. 9, the air cleaner 213 is arranged to extend in the Y-axis direction on the side of the loading / unloading port 201 of the cleaning mechanism 210. Then, when the wafer W held by the transfer pad 44 passes the air cleaning tool 213, air is jetted from the air cleaning tool 213 to the surface W1, and the surface W1 is dried.
　なお、エア洗浄具２１３は、Ｙ軸方向に延伸する形状ではなく、例えばエアを噴射する単一のノズルであってもよい。かかる場合、エア洗浄具２１３のノズルは移動機構（図示せず）によってＹ軸方向に移動自在であるのが好ましい。そして、搬送パッド４４によりウェハＷを回転させながら、エア洗浄具２１３のノズルから表面Ｗ１にエアが噴射され、当該表面Ｗ１が乾燥される。 The air cleaning tool 213 may not have a shape extending in the Y-axis direction, but may be, for example, a single nozzle that jets air. In such a case, the nozzle of the air cleaner 213 is preferably movable in the Y-axis direction by a moving mechanism (not shown). Then, while the wafer W is rotated by the transfer pad 44, air is jetted from the nozzle of the air cleaning tool 213 to the surface W1, and the surface W1 is dried.
　また、回転体２１１は、側面形状が五角形以上の、多角柱形状を有していてもよい。かかる場合、回転体２１１の側面には、４つの洗浄具２１２～２１５の他、例えばウェハＷの裏面Ｗ２を洗浄する洗浄具を設けてもよい。 In addition, the rotating body 211 may have a polygonal prism shape whose side surface shape is a pentagon or more. In such a case, in addition to the four cleaning tools 212 to 215, a cleaning tool that cleans, for example, the back surface W2 of the wafer W may be provided on the side surface of the rotating body 211.
　以上の実施形態の洗浄機構２１０において、回転体２１１及び洗浄具２１２～２１５はそれぞれ、搬送パッド４４の保持面４４ａの径（ウェハＷの表面Ｗ１の径）よりも長く延伸していたが、洗浄具２１２～２１５の軸方向の長さはこれに限定されない。上述したようにステップＳ６、Ｓ７において、ウェハＷの表面Ｗ１の洗浄は、ウェハＷを回転させながら行われる。このため、スポンジ洗浄具２１２とエア洗浄具２１３はそれぞれ、少なくとも表面Ｗ１の径の半分以上であれば、当該表面Ｗ１の全面を洗浄し、乾燥させることができる。同様に、ステップＴ１において、搬送パッド４４の保持面４４ａの洗浄も、搬送パッド４４を回転させながら行われるため、ストーン洗浄具２１４とブラシ洗浄具２１５はそれぞれ、少なくとも保持面４４ａの径の半分以上であれば、当該保持面４４ａの全面を洗浄することができる。 In the cleaning mechanism 210 according to the above-described embodiment, the rotating body 211 and the cleaning tools 212 to 215 respectively extend longer than the diameter of the holding surface 44a of the transfer pad 44 (diameter of the surface W1 of the wafer W). The axial length of the members 212 to 215 is not limited to this. As described above, in steps S6 and S7, the cleaning of the surface W1 of the wafer W is performed while rotating the wafer W. For this reason, the sponge cleaning tool 212 and the air cleaning tool 213 can clean and dry the entire surface W1 if it is at least half the diameter of the surface W1. Similarly, in step T1, cleaning of the holding surface 44a of the transfer pad 44 is also performed while rotating the transfer pad 44. Therefore, the stone cleaning tool 214 and the brush cleaning tool 215 each have at least a half or more of the diameter of the holding surface 44a. If so, the entire surface of the holding surface 44a can be cleaned.
　以上の実施形態では、ウェハＷの表面Ｗ１と搬送パッド４４の保持面４４ａを洗浄する際、搬送パッド４４を鉛直軸回りに回転させていたが、搬送パッド４４と洗浄機構２１０は相対的に回転すればよい。例えば回転機構（図示せず）によって洗浄機構２１０を鉛直軸回りに回転させてもよいし、あるいは搬送パッド４４と洗浄機構２１０の両方を鉛直軸回りに回転させてもよい。 In the above embodiment, when cleaning the front surface W1 of the wafer W and the holding surface 44a of the transfer pad 44, the transfer pad 44 is rotated about the vertical axis, but the transfer pad 44 and the cleaning mechanism 210 rotate relatively. do it. For example, the cleaning mechanism 210 may be rotated about the vertical axis by a rotation mechanism (not shown), or both the transport pad 44 and the cleaning mechanism 210 may be rotated about the vertical axis.
　以上の実施形態では、洗浄液槽２３０からスポンジ洗浄具２１２に洗浄液を供給していたが、スポンジ洗浄具２１２への洗浄液の供給方法はこれに限定されない。例えば、スポンジ洗浄具２１２は洗浄液ノズル（図示せず）を内蔵し、当該洗浄液ノズルからスポンジ洗浄具２１２のスポンジに洗浄液を供給してもよい。 Although the cleaning liquid is supplied from the cleaning liquid tank 230 to the sponge cleaning tool 212 in the above embodiment, the method of supplying the cleaning liquid to the sponge cleaning tool 212 is not limited to this. For example, the sponge cleaning tool 212 may incorporate a cleaning solution nozzle (not shown) and supply the cleaning solution to the sponge of the sponge cleaning tool 212 from the cleaning solution nozzle.
　また、以上の実施形態では、ウェハＷの表面Ｗ１にはデバイスを保護するために保護テープＰが貼り付けられていたが、デバイスの保護材はこれに限定されない。例えばウェハＷの表面Ｗ１には、支持ウェハやガラス基板などの支持基板が貼り合せられていてもよく、かかる場合でも本発明を適用することができる。 Further, in the above embodiment, the protective tape P is attached to the front surface W1 of the wafer W in order to protect the device, but the protective material of the device is not limited to this. For example, a support substrate such as a support wafer or a glass substrate may be attached to the surface W1 of the wafer W, and the present invention can be applied even in such a case.
＜第３の実施形態＞
　なお、以上の実施形態の洗浄機構２１０において、洗浄具２１２～２１５はそれぞれ回転体２１１の側面に設けられたが、洗浄機構２１０の構成はこれに限定されない。 Third Embodiment
In the cleaning mechanism 210 of the above embodiment, the cleaning tools 212 to 215 are respectively provided on the side surface of the rotating body 211, but the configuration of the cleaning mechanism 210 is not limited to this.
　図１０に示すように第３の実施形態によれば、洗浄機構２１０には、ワーク乾燥ツール３００、チャック洗浄ツール３０１及びワーク洗浄ツール３０２がＹ軸方向にこの順で並べて配置されている。 As shown in FIG. 10, according to the third embodiment, in the cleaning mechanism 210, the work drying tool 300, the chuck cleaning tool 301, and the work cleaning tool 302 are arranged in this order in the Y-axis direction.
　ワーク乾燥ツール３００には、ウェハＷの表面Ｗ１にエアを噴射して、当該表面Ｗ１を乾燥するエア洗浄具２１３が設けられている。また、ワーク乾燥ツール３００は、移動機構３０３により第２の洗浄ユニット７０の内部において、Ｘ軸方向に移動自在に構成されている。 The work drying tool 300 is provided with an air cleaning tool 213 which sprays air on the surface W1 of the wafer W to dry the surface W1. Further, the work drying tool 300 is configured to be movable in the X-axis direction inside the second cleaning unit 70 by the moving mechanism 303.
　チャック洗浄ツール３０１には回転体２１１が設けられ、当該回転体２１１の表面には、少なくともストーン洗浄具２１４及びブラシ洗浄具２１５が設けられている。なお、ストーン洗浄具２１４及びブラシ洗浄具２１５は、例えば、それぞれＸ軸方向において保持面４４ａの径よりも長く延伸する砥石及びブラシを有している。 The chuck cleaning tool 301 is provided with a rotating body 211, and at least a stone cleaning tool 214 and a brush cleaning tool 215 are provided on the surface of the rotating body 211. The stone cleaning tool 214 and the brush cleaning tool 215 each have, for example, a grindstone and a brush which extend longer than the diameter of the holding surface 44 a in the X-axis direction.
　ワーク洗浄ツール３０２には、スポンジ洗浄具２１２、スポンジ洗浄ノズル３０４及びスポンジ洗浄ローラー３０５が設けられている。また、スポンジ洗浄具２１２はアクチュエータ（図示せず）を内蔵する回転機構（図示せず）に取り付けられており、シャフト（図示せず）を介して回転自在に構成されている。また更に、ワーク洗浄ツール３０２は、昇降機構（図示せず）によって昇降自在に構成され、ウェハＷの表面Ｗ１を洗浄する際にチャック洗浄ツール３０１の上端部よりも上方に突出するように制御される。なお、スポンジ洗浄具２１２は、例えばＸ軸方向においてウェハＷの表面Ｗ１の径よりも長く延伸するスポンジを有している。 The workpiece cleaning tool 302 is provided with a sponge cleaning tool 212, a sponge cleaning nozzle 304 and a sponge cleaning roller 305. The sponge cleaner 212 is attached to a rotation mechanism (not shown) incorporating an actuator (not shown), and is configured to be rotatable via a shaft (not shown). Furthermore, the workpiece cleaning tool 302 is configured to be movable up and down by a lift mechanism (not shown), and is controlled to protrude above the upper end of the chuck cleaning tool 301 when cleaning the surface W1 of the wafer W. Ru. The sponge cleaning tool 212 has, for example, a sponge that extends longer than the diameter of the surface W1 of the wafer W in the X-axis direction.
　次に、第３の実施形態にかかる洗浄機構２１０を用いた、被処理体としてのウェハＷの表面Ｗ１及び搬送パッド４４の保持面４４ａの洗浄方法について説明する。 Next, a method of cleaning the surface W1 of the wafer W as the object to be processed and the holding surface 44a of the transfer pad 44 using the cleaning mechanism 210 according to the third embodiment will be described.
　ウェハＷの表面Ｗ１に洗浄にあたっては、先ずスポンジ洗浄ノズル３０４からスポンジ洗浄具２１２に洗浄液Ｌ（例えば純水等）を供給する。その後、図１１（ａ）に示すようにスポンジ洗浄具２１２及びスポンジ洗浄ローラー３０５を回転させた状態でワーク洗浄ツール３０２を昇降機構によって上昇させ、洗浄液Ｌを含んだスポンジ洗浄具２１２をウェハＷの表面Ｗ１に当接させる。そして、搬送パッド４４によりウェハＷをＹ軸方向に移動させながらスポンジ洗浄具２１２を表面Ｗ１に当接させることで、表面Ｗ１（保護テープＰ）の全面が洗浄される。 In cleaning the surface W 1 of the wafer W, first, the cleaning liquid L (for example, pure water or the like) is supplied from the sponge cleaning nozzle 304 to the sponge cleaning tool 212. Thereafter, as shown in FIG. 11A, with the sponge cleaning tool 212 and the sponge cleaning roller 305 rotated, the work cleaning tool 302 is lifted by the lifting mechanism, and the sponge cleaning tool 212 including the cleaning liquid L is transferred to the wafer W. It abuts on the surface W1. Then, the sponge cleaning tool 212 is brought into contact with the surface W1 while the wafer W is moved in the Y axis direction by the transfer pad 44, whereby the entire surface W1 (protective tape P) is cleaned.
　この際、スポンジ洗浄具２１２は洗浄液Ｌを含んでいるため、ウェハＷの表面Ｗ１の汚れを適切に除去することができる。また、スポンジ洗浄具２１２によって除去された汚れは、スポンジ洗浄ローラー３０５により適切にスポンジ洗浄具２１２から除去される。 At this time, since the sponge cleaning tool 212 includes the cleaning liquid L, the dirt on the surface W1 of the wafer W can be appropriately removed. Also, the dirt removed by the sponge cleaner 212 is appropriately removed from the sponge cleaner 212 by the sponge cleaning roller 305.
　なお、かかる表面Ｗ１の洗浄にあたっては、ウェハＷは搬送パッド４４により回転されていてもよい。 The wafer W may be rotated by the transfer pad 44 in cleaning the surface W1.
　その後、図１１（ｂ）に示すように搬送パッド４４によりウェハＷをワーク乾燥ツール３００の上方に移動させる。そして、図１１（ｃ）に示すようにエア洗浄具２１３をウェハＷの表面Ｗ１に対向配置した状態で、搬送パッド４４によりウェハＷを回転させながら、エア洗浄具２１３から表面Ｗ１にエアを噴射した状態で、エア洗浄具２１３をＸ軸方向に移動させることで、表面Ｗ１（保護テープＰ）の全面が乾燥される。 Thereafter, as shown in FIG. 11B, the wafer W is moved above the workpiece drying tool 300 by the transfer pad 44. Then, in a state where the air cleaning tool 213 is disposed to face the front surface W1 of the wafer W as shown in FIG. 11C, the air cleaning tool 213 sprays air onto the front surface W1 while rotating the wafer W by the transfer pad 44. By moving the air cleaning tool 213 in the X-axis direction in the above state, the entire surface W1 (protective tape P) is dried.
　これらウェハＷの表面Ｗ１（保護テープＰ）の洗浄においてウェハＷが搬送パッド４４に保持される前に、搬送パッド４４は、チャック洗浄ツール３０１を用いて洗浄されている。具体的には、図１２（ａ）に示すようにストーン洗浄具２１４を回転体２１１の上面に配置した状態、すなわちストーン洗浄具２１４を搬送パッド４４の保持面４４ａに対向配置した状態で、搬送パッド４４を回転させながら、ストーン洗浄具２１４を保持面４４ａに当接させることで、保持面４４ａの全面が洗浄される。また、図１２（ｂ）に示すようにブラシ洗浄具２１５を回転体２１１の上面に配置した状態、すなわちブラシ洗浄具２１５を保持面４４ａに対向配置した状態で、搬送パッド４４を回転させながら、ブラシ洗浄具２１５を保持面４４ａに当接させることで、保持面４４ａの全面が洗浄される。 Before the wafer W is held by the transfer pad 44 in the cleaning of the surface W 1 (protective tape P) of the wafer W, the transfer pad 44 is cleaned using the chuck cleaning tool 301. More specifically, as shown in FIG. 12A, the stone cleaning tool 214 is disposed on the upper surface of the rotating body 211, that is, in the state where the stone cleaning tool 214 is disposed opposite to the holding surface 44a of the transport pad 44 The entire surface of the holding surface 44 a is cleaned by bringing the stone cleaning tool 214 into contact with the holding surface 44 a while rotating the pad 44. Further, as shown in FIG. 12B, while the brush cleaning tool 215 is disposed on the upper surface of the rotating body 211, that is, the brush cleaning tool 215 is disposed opposite to the holding surface 44a, the transfer pad 44 is rotated. The entire surface of the holding surface 44 a is cleaned by bringing the brush cleaning tool 215 into contact with the holding surface 44 a.
　なお、搬送パッド４４の洗浄にあたっては、搬送パッド４４の保持面４４ａに接続された洗浄液供給ライン（図示せず）から洗浄液（例えば純水等）が供給されてもよい。洗浄液供給ラインは、例えば搬送パッド４４の内部においてウェハＷの吸着ラインと切り替え可能に接続され、搬送パッド４４の洗浄に際して、吸着ラインから切り替えられる。このように、搬送パッド４４に洗浄液が供給されることにより、搬送パッド４４の保持面４４ａの汚れを適切に除去することができる。 Note that when cleaning the transfer pad 44, a cleaning solution (for example, pure water or the like) may be supplied from a cleaning solution supply line (not shown) connected to the holding surface 44a of the transfer pad 44. The cleaning liquid supply line is switchably connected to the suction line of the wafer W, for example, inside the transfer pad 44, and is switched from the suction line when the transfer pad 44 is cleaned. As described above, by supplying the cleaning liquid to the transfer pad 44, the dirt on the holding surface 44a of the transfer pad 44 can be appropriately removed.
　なお、搬送パッド４４の洗浄は、ストーン洗浄具２１４とブラシ洗浄具２１５のいずれか一方で行われてもよいし、あるいは両方で行われてもよい。また、搬送パッド４４の洗浄は、ウェハＷの表面Ｗ１の洗浄までの任意のタイミングで行われる。 In addition, the cleaning of the transfer pad 44 may be performed by either the stone cleaning tool 214 or the brush cleaning tool 215, or may be performed by both. Further, the cleaning of the transfer pad 44 is performed at an arbitrary timing until the cleaning of the surface W1 of the wafer W.
　以上、本発明の実施形態について説明したが、本発明はかかる例に限定されない。当業者であれば、請求の範囲に記載された技術的思想の範疇内において、各種の変更例または修正例に想到しうることは明らかであり、それらについても当然に本発明の技術的範囲に属するものと了解される。 As mentioned above, although embodiment of this invention was described, this invention is not limited to this example. It is apparent that those skilled in the art can conceive of various modifications or alterations within the scope of the technical idea described in the claims, and they are naturally also within the technical scope of the present invention. It is understood that it belongs.
　　１　　　基板処理システム
　　２　　　搬入ステーション
　　３　　　搬出ステーション
　　４　　　加工装置
　　５　　　後処理装置
　　６　　　搬送ステーション
　　４０　　搬送ユニット
　　４４　　搬送パッド
　　４４ａ　保持面
　　７０　　第２の洗浄ユニット
　　１２０　制御部
　　２１０　洗浄機構
　　２１１　回転体
　　２１２　スポンジ洗浄具
　　２１３　エア洗浄具
　　２１４　ストーン洗浄具
　　２１５　ブラシ洗浄具
　　２２０　回転機構
　　２３０　洗浄液槽
　　３００　ワーク乾燥ツール
　　３０１　チャック洗浄ツール
　　３０２　ワーク洗浄ツール
　　Ｌ　　　洗浄液
　　Ｐ　　　保護テープ
　　Ｗ　　　ウェハ
　　Ｗ１　　表面
　　Ｗ２　　裏面 DESCRIPTION OF SYMBOLS 1 substrate processing system 2 loading station 3 unloading station 4 processing apparatus 5 post-processing apparatus 6 transfer station 40 transfer unit 44 transfer pad 44a holding surface 70 second cleaning unit 120 control unit 210 cleaning mechanism 211 rotating body 212 sponge cleaning tool 213 air Cleaning tool 214 Stone cleaning tool 215 Brush cleaning tool 220 Rotation mechanism 230 Cleaning solution tank 300 Work drying tool 301 Chuck cleaning tool 302 Work cleaning tool L Cleaning solution L Protective tape W Wafer W1 Front surface W2 Back surface

Claims (15)

  1. 被処理体を洗浄する洗浄装置であって、
    前記被処理体の洗浄面の径方向を中心軸として回転する回転体と、
    前記回転体に設けられ、前記洗浄面を洗浄する複数の洗浄具と、を有し、
    前記複数の洗浄具は、前記回転体の表面において軸方向に延伸し、且つ当該回転体の周方向に並べて配置されている。     A cleaning apparatus for cleaning an object to be treated,
    A rotating body that rotates about the radial direction of the cleaning surface of the object to be treated as a central axis;
    A plurality of cleaning tools provided on the rotating body for cleaning the cleaning surface;
    The plurality of cleaning tools extend in the axial direction on the surface of the rotating body, and are arranged side by side in the circumferential direction of the rotating body.
  2. 請求項１に記載の洗浄装置において、
    前記被処理体は、表面に保護材が設けられた基板を含み、
    前記洗浄面は、前記基板の表面に設けられた前記保護材であり、
    前記複数の洗浄具は、前記洗浄面に洗浄液を供給しつつ当接して、当該洗浄面を洗浄する基板洗浄具を含む。     In the cleaning device according to claim 1,
    The object to be treated includes a substrate provided with a protective material on the surface,
    The cleaning surface is the protective material provided on the surface of the substrate,
    The plurality of cleaning tools include a substrate cleaning tool that contacts the cleaning surface while supplying a cleaning solution and cleans the cleaning surface.
  3. 請求項２に記載の洗浄装置において、
    前記複数の洗浄具は、前記洗浄面に気体を供給して、当該洗浄面を乾燥させる基板乾燥具を含む。     In the cleaning device according to claim 2,
    The plurality of cleaning tools include a substrate drying tool that supplies a gas to the cleaning surface to dry the cleaning surface.
  4. 請求項２に記載の洗浄装置において、
    前記洗浄液を貯留し、前記基板洗浄具に当該洗浄液を供給する洗浄液槽をさらに有する。     In the cleaning device according to claim 2,
    The cleaning apparatus further includes a cleaning solution tank for storing the cleaning solution and supplying the cleaning solution to the substrate cleaning tool.
  5. 請求項１に記載の洗浄装置において、
    前記被処理体は、表面に保護材が設けられた基板を保持して搬送する搬送パッドを含み、
    前記洗浄面は、前記搬送パッドの前記基板の保持面であり、
    前記複数の洗浄具は、前記洗浄面に当接して当該洗浄面を洗浄するパッド洗浄具を含む。     In the cleaning device according to claim 1,
    The object to be processed includes a transfer pad for holding and transferring a substrate provided with a protective material on its surface,
    The cleaning surface is a holding surface of the substrate of the transfer pad,
    The plurality of cleaning tools include a pad cleaning tool that abuts on the cleaning surface to clean the cleaning surface.
  6. 請求項５に記載の洗浄装置において、
    前記被処理体は、表面に保護材が設けられた基板を含み、
    前記洗浄面は、第２の洗浄面としての前記基板の表面に設けられた前記保護材を含み、
    前記洗浄装置は、
    前記回転体とは独立して設けられ、洗浄液を含んだ状態で前記第２の洗浄面に当接して、当該第２の洗浄面を洗浄する基板洗浄具と、
    前記回転体とは独立して設けられ、前記第２の洗浄面に気体を供給して、当該第２の洗浄面を乾燥させる基板乾燥具を有する。     In the cleaning device according to claim 5,
    The object to be treated includes a substrate provided with a protective material on the surface,
    The cleaning surface includes the protective material provided on the surface of the substrate as a second cleaning surface,
    The cleaning device is
    A substrate cleaning tool which is provided independently of the rotating body and is in contact with the second cleaning surface in a state containing a cleaning solution to clean the second cleaning surface;
    The substrate drying tool is provided independently of the rotating body and supplies a gas to the second cleaning surface to dry the second cleaning surface.
  7. 請求項１に記載の洗浄装置において、
    前記洗浄具は、少なくとも前記洗浄面の径方向の半分以上の長さで、前記回転体の表面において軸方向に延伸する。     In the cleaning device according to claim 1,
    The cleaning tool extends in the axial direction on the surface of the rotating body with a length of at least half of the radial direction of the cleaning surface.
  8. 請求項１に記載の洗浄装置において、
    前記被処理体と前記洗浄具は、前記洗浄面と直交する方向を中心軸として相対的に回転する。     In the cleaning device according to claim 1,
    The object to be treated and the cleaning tool relatively rotate around a direction orthogonal to the cleaning surface as a central axis.
  9. 被処理体を洗浄する洗浄方法であって、
    前記被処理体の洗浄面の径方向を中心軸として回転する回転体と、前記回転体の表面において軸方向に延伸し、且つ当該回転体の周方向に並べて配置された複数の洗浄具とを備えた洗浄装置を用い、
    前記被処理体に応じて前記複数の洗浄具のうち一の洗浄具を選択し、
    前記回転体を回転させて前記洗浄面に前記一の洗浄具を対向配置し、当該一の洗浄具を用いて前記洗浄面を洗浄する。     A cleaning method for cleaning an object to be treated,
    A rotating body that rotates around a radial direction of the cleaning surface of the object to be treated as a central axis, and a plurality of cleaning tools axially extended on the surface of the rotating body and arranged in the circumferential direction of the rotating body; Using the equipped cleaning device,
    One cleaning tool is selected from the plurality of cleaning tools according to the object to be treated,
    The rotating body is rotated to place the one cleaning tool opposite to the cleaning surface, and the one cleaning tool is used to clean the cleaning surface.
  10. 請求項９に記載の洗浄方法において、
    前記被処理体は、表面に保護材が設けられた基板を含み、
    前記洗浄面は、前記基板の表面に設けられた前記保護材であり、
    前記一の洗浄具から前記洗浄面に洗浄液を供給しつつ、前記一の洗浄具を前記洗浄面に当接させて、当該洗浄面を洗浄する。     In the cleaning method according to claim 9,
    The object to be treated includes a substrate provided with a protective material on the surface,
    The cleaning surface is the protective material provided on the surface of the substrate,
    While supplying the cleaning solution from the one cleaning tool to the cleaning surface, the one cleaning tool is brought into contact with the cleaning surface to clean the cleaning surface.
  11. 請求項１０に記載の洗浄方法において、
    前記一の洗浄具とは異なる他の洗浄具から前記洗浄面に気体を供給して、当該洗浄面を乾燥させる。     In the cleaning method according to claim 10,
    A gas is supplied to the cleaning surface from another cleaning tool different from the one cleaning tool to dry the cleaning surface.
  12. 請求項９に記載の洗浄方法において、
    前記被処理体は、表面に保護材が設けられた基板を保持して搬送する搬送パッドを含み、
    前記洗浄面は、前記搬送パッドの前記基板の保持面であり、
    前記一の洗浄具を前記洗浄面に当接させて、当該洗浄面を洗浄する。     In the cleaning method according to claim 9,
    The object to be processed includes a transfer pad for holding and transferring a substrate provided with a protective material on its surface,
    The cleaning surface is a holding surface of the substrate of the transfer pad,
    The one cleaning tool is brought into contact with the cleaning surface to clean the cleaning surface.
  13. 請求項１２に記載の洗浄方法において、
    前記被処理体は、表面に保護材が設けられた基板を含み、
    前記洗浄面は、第２の洗浄面としての前記基板の表面に設けられた前記保護材を含み、
    前記回転体とは独立して設けられる別の洗浄具を、洗浄液を含んだ状態で前記第２の洗浄面に当接させて当該第２の洗浄面を洗浄し、
    前記回転体とは独立して設けられる更に別の洗浄具から、前記第２の洗浄面に気体を供給して、当該第２の洗浄面を乾燥させる。     In the cleaning method according to claim 12,
    The object to be treated includes a substrate provided with a protective material on the surface,
    The cleaning surface includes the protective material provided on the surface of the substrate as a second cleaning surface,
    Another cleaning tool provided independently of the rotating body is brought into contact with the second cleaning surface in a state containing the cleaning solution to clean the second cleaning surface;
    A gas is supplied to the second cleaning surface from yet another cleaning tool provided independently of the rotating body to dry the second cleaning surface.
  14. 請求項９に記載の洗浄方法において、
    前記一の洗浄具を用いて前記洗浄面を洗浄する際、前記被処理体と前記一の洗浄具を、前記洗浄面と直交する方向を中心軸として相対的に回転させる。     In the cleaning method according to claim 9,
    When the cleaning surface is cleaned using the one cleaning tool, the object to be processed and the one cleaning tool are relatively rotated around a direction orthogonal to the cleaning surface.
  15. 被処理体を洗浄する洗浄方法を洗浄装置によって実行させるように、当該洗浄装置を制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、
    前記洗浄方法は、
    前記被処理体の洗浄面の径方向を中心軸として回転する回転体と、前記回転体の表面において軸方向に延伸し、且つ当該回転体の周方向に並べて配置された複数の洗浄具とを備えた洗浄装置を用い、
    前記被処理体に応じて前記複数の洗浄具のうち一の洗浄具を選択し、
    前記回転体を回転させて前記洗浄面に前記一の洗浄具を対向配置し、当該一の洗浄具を用いて前記洗浄面を洗浄する。     A readable computer storage medium storing a program that operates on a computer of a control unit that controls the cleaning device so that the cleaning device executes a cleaning method for cleaning an object to be treated,
    The cleaning method is
    A rotating body that rotates around a radial direction of the cleaning surface of the object to be treated as a central axis, and a plurality of cleaning tools axially extended on the surface of the rotating body and arranged in the circumferential direction of the rotating body; Using the equipped cleaning device,
    One cleaning tool is selected from the plurality of cleaning tools according to the object to be treated,
    The rotating body is rotated to place the one cleaning tool opposite to the cleaning surface, and the one cleaning tool is used to clean the cleaning surface.
PCT/JP2018/047860 2018-01-09 2018-12-26 Cleaning device, cleaning method, and computer memory medium WO2019138881A1 (en)

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