WO2019124031A1 - 基板処理システム、基板処理方法及びコンピュータ記憶媒体 - Google Patents
基板処理システム、基板処理方法及びコンピュータ記憶媒体 Download PDFInfo
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- WO2019124031A1 WO2019124031A1 PCT/JP2018/044363 JP2018044363W WO2019124031A1 WO 2019124031 A1 WO2019124031 A1 WO 2019124031A1 JP 2018044363 W JP2018044363 W JP 2018044363W WO 2019124031 A1 WO2019124031 A1 WO 2019124031A1
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- Prior art keywords
- peripheral edge
- substrate
- grinding
- wafer
- substrate processing
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- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 238000003672 processing method Methods 0.000 title claims description 14
- 238000003860 storage Methods 0.000 title description 5
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Definitions
- the present invention relates to a substrate processing system for processing a substrate, a substrate processing method using the substrate processing system, and a computer storage medium.
- the back surface of the wafer is ground and polished to thin the wafer with respect to a semiconductor wafer (hereinafter referred to as a wafer) on which devices such as a plurality of electronic circuits are formed on the surface.
- a wafer a semiconductor wafer
- the wafer may be warped or broken.
- the wafer is attached to a support substrate.
- peripheral portion of the wafer is usually chamfered, if the wafer is subjected to grinding and polishing as described above, the peripheral portion of the wafer becomes sharp and sharp. As a result, chipping may occur at the periphery of the wafer, and the wafer may be damaged. Therefore, so-called edge trimming is performed in which the peripheral portion of the wafer is cut in advance before the grinding process.
- Patent Document 1 discloses a vertical surface type grinding apparatus as an apparatus for performing edge trimming.
- the wafer is fixed to a table, and the table is rotated about an axis parallel to the vertical axis. Then, the spindle is rotated to rotate the cup wheel, and then the spindle is moved in the vertical direction to bring the grinding surface of the cup wheel into contact with the wafer to grind the peripheral portion of the wafer.
- the peripheral portion of the wafer is ground using a cup wheel.
- the particle diameter of the abrasive grains of the cup wheel it is necessary to increase the particle diameter of the abrasive grains of the cup wheel.
- the surface of the wafer exposed hereinafter referred to as an exposed surface
- the present invention has been made in view of the above circumstances, and in grinding and removing the peripheral portion of a substrate, the substrate surface exposed by grinding the peripheral portion while shortening the time taken for the peripheral portion removal.
- the purpose is to improve the surface quality of
- One aspect of the present invention which solves the above-mentioned subject is a substrate processing system which processes a substrate, and it has the 1st whetstone which contacts the peripheral part of the substrate, and grinds the peripheral part to the 1st depth.
- a second peripheral removal portion for removing by grinding to a second depth deeper than the depth, and the grain size of the abrasive provided in the second grindstone is greater than that of the abrasive provided in the first grindstone small.
- Another aspect of the present invention is a substrate processing method for processing a substrate, wherein a first grinding stone is brought into contact with a peripheral edge of the substrate, and the peripheral edge is ground to a first depth.
- a first peripheral edge removing step of removing, and thereafter, a second grinding stone is brought into contact with the peripheral edge portion of the substrate, and the peripheral edge portion is ground and removed to a second depth deeper than the first depth.
- a peripheral edge removing step and the particle size of the abrasive provided in the second grindstone is smaller than the particle size of the abrasive provided in the first grindstone.
- a readable computer storing a program operating on a computer of a control unit that controls the substrate processing system to cause the substrate processing system to execute the substrate processing method. It is a storage medium.
- the time taken to remove the peripheral portion can be shortened by using the first grindstone to improve the throughput of the substrate processing. it can. Further, by using the second grindstone, it is also possible to improve the surface texture of the substrate surface exposed by grinding the peripheral portion.
- FIG. 1 is a plan view schematically showing the outline of the configuration of a substrate processing system 1.
- the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to one another are defined, and the Z-axis positive direction is the vertically upward direction.
- the superposed wafer T in which the processing target wafer W as a substrate and the supporting wafer S are joined is processed via the adhesive G, for example. Thin W.
- the surface to be processed ground (surface opposite to the surface to which the adhesive G is bonded)
- processing surface W1 the surface on the opposite side to the processing surface W1 is “non-processed It is called a processing surface W2.
- the surface bonded to the processing target wafer W via the adhesive G is referred to as “bonding surface S1”, and the surface opposite to the bonding surface S1 is referred to as “non-bonding surface S2”.
- the processing target wafer W and the support wafer S are bonded via the adhesive G, but the bonding method is not limited to this.
- the processing target wafer W is, for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer, and a plurality of devices are formed on the non-processed surface W2.
- the peripheral portion of the processing target wafer W is chamfered, and the cross section of the peripheral portion has a thickness decreasing toward its tip.
- the support wafer S is a wafer that supports the processing wafer W. Further, the support wafer S functions as a protective material for protecting the device on the non-processed surface W2 of the processing target wafer W together with the adhesive G. Although the case where a wafer is used as a supporting substrate is described in this embodiment, another substrate such as a glass substrate may be used, for example.
- the substrate processing system 1 performs a predetermined process on the superposed wafer T, for example, the loading / unloading station 2 to which a cassette C capable of accommodating a plurality of superposed wafers T is carried in / out with the outside. It has the structure which connected the processing station 3 provided with various processing apparatuses.
- a cassette mounting table 10 is provided at the loading / unloading station 2.
- a plurality of, for example, four cassettes C can be mounted on the cassette mounting table 10 in a row in the X-axis direction.
- a wafer transfer area 20 is provided adjacent to the cassette mounting table 10.
- a wafer transfer apparatus 22 movable on the transfer path 21 extending in the X-axis direction is provided.
- the wafer transfer apparatus 22 has, for example, two transfer arms 23 for holding and transferring the superposed wafer T.
- Each transfer arm 23 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis.
- the structure of the conveyance arm 23 is not limited to this embodiment, An arbitrary structure can be taken.
- the processing station 3 is provided with a wafer transfer area 30.
- a wafer transfer apparatus 32 movable on the transfer path 31 extending in the Y-axis direction is provided.
- the wafer transfer apparatus 32 has, for example, two transfer arms 33 for holding and transferring the superposed wafer T.
- Each transfer arm 33 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis.
- the structure of the conveyance arm 33 is not limited to this embodiment, An arbitrary structure can be taken.
- a processing device 40 At the processing station 3, around the wafer transfer area 30, a processing device 40, a CMP device 41 (CMP: Chemical Mechanical Polishing, chemical mechanical polishing), a first edge removing device 42, a second edge removing device 43, a first One cleaning device 44 and a second cleaning device 45 are provided.
- the processing apparatus 40 and the CMP apparatus 41 are arranged side by side in the negative direction from the Y-axis positive direction on the X-axis negative direction side of the wafer transfer region 30.
- a first peripheral edge removing device 42 and a second peripheral edge removing device 43 are arranged side by side from the Y-axis positive direction to the negative direction on the X-axis positive direction side of the wafer transfer area 30.
- a first cleaning device 44 and a second cleaning device 45 are arranged side by side in the negative direction from the Y-axis positive direction above the wafer transfer region 30 and on the Y-axis negative direction side. Under the second cleaning device 45, a transition device (not shown) for delivering the superposed wafer T between the wafer transfer device 22 and the wafer transfer device 32 is provided.
- the control unit 50 is provided in the substrate processing system 1 described above.
- the control unit 50 is, for example, a computer and has a program storage unit (not shown).
- the program storage unit stores a program for controlling processing of the superposed wafer T in the substrate processing system 1.
- the program storage unit also stores a program for realizing the below-described wafer processing in the substrate processing system 1 by controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses.
- the program is recorded in a computer readable storage medium H such as a computer readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical desk (MO), and a memory card. It may be one that has been installed in the control unit 50 from the storage medium H.
- the processing apparatus 40 includes a rotary table 100, a transfer unit 110, an alignment unit 120, a cleaning unit 130, a rough grinding unit 140, a middle grinding unit 150, and a finish grinding unit 160.
- the rotary table 100 is configured to be rotatable by a rotation mechanism (not shown).
- Four chucks 101 for holding the superposed wafer T by suction are provided on the rotary table 100.
- the chucks 101 are arranged uniformly on the same circumference as the rotary table 100, that is, every 90 degrees.
- the four chucks 101 are movable to the delivery position A0 and the processing positions A1 to A3 by rotation of the rotary table 100.
- the delivery position A0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the rotary table 100, and the alignment unit 120 and the cleaning unit 130 are arranged on the Y-axis negative direction side of the delivery position A0. Be done.
- the first processing position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the rotary table 100, and the rough grinding unit 140 is disposed.
- the second processing position A2 is a position on the X axis negative direction side and the Y axis positive direction side of the rotary table 100, and the middle grinding unit 150 is disposed.
- the third processing position A3 is a position on the X axis negative direction side and the Y axis negative direction side of the rotary table 100, and the finish grinding unit 160 is disposed.
- the chuck 101 is held by a chuck base 102.
- the chuck 101 and the chuck base 102 are configured to be rotatable by a rotation mechanism (not shown).
- the transport unit 110 is an articulated robot including a plurality of, for example, three arms 111 to 113.
- the three arms 111 to 113 are connected by joints (not shown), and by these joints, the first arm 111 and the second arm 112 are configured to be pivotable around their respective proximal ends.
- a transfer pad 114 for attracting and holding the superposed wafer T is attached to the first arm 111 at the tip.
- the third arm 113 at the proximal end is attached to a vertical movement mechanism 115 for moving the arms 111 to 113 in the vertical direction.
- the transfer unit 110 having such a configuration can transfer the superposed wafer T to the delivery position A0, the alignment unit 120, and the cleaning unit 130.
- the alignment unit 120 adjusts the horizontal direction of the superposed wafer T before the grinding process. For example, while rotating the superposed wafer T held by a spin chuck (not shown), the position of the notched portion is adjusted by detecting the position of the notched portion of the superposed wafer T with a detection unit (not shown). Thus, the horizontal direction of the superposed wafer T is adjusted.
- the non-bonded surface S2 of the support wafer S in a state where the superposed wafer T after the grinding process is held by the transfer pad 114 is cleaned, and the transfer pad 114 is cleaned.
- the rough grinding unit 140 roughly grinds the processing surface W1 of the processing target wafer W.
- the rough grinding unit 140 has a rough grinding portion 141 provided with a ring-shaped rotatable rough grinding wheel (not shown).
- the rough grinding portion 141 is configured to be movable in the vertical direction and the horizontal direction along the support 142. Then, while the processing target wafer W held by the chuck 101 is in contact with the rough grinding stone, the processing surface W1 of the processing target wafer W is roughly ground by rotating the chuck 101 and the rough grinding stone.
- the processing surface W1 of the processing target wafer W is middle ground.
- the middle grinding unit 150 has a middle grinding portion 151 having an annular shape and a rotatable middle grinding wheel (not shown).
- the middle grinding portion 151 is configured to be movable in the vertical direction and the horizontal direction along the support column 152.
- the grain size of the abrasive grains of the medium grinding wheel is smaller than the grain size of the abrasive grains of the rough grinding stone.
- the processing surface W1 of the processing target wafer W is finish ground.
- the finish grinding unit 160 has a finish grinding portion 161 provided with a ring-shaped rotatable finish grinding wheel (not shown).
- the finish grinding unit 161 is configured to be movable in the vertical direction and the horizontal direction along the support column 162.
- the grain size of the abrasive grains of the finish grinding wheel is smaller than the grain size of the abrasive grains of the medium grinding wheel.
- the CMP apparatus 41 shown in FIG. 1 includes, for example, two polishing units (not shown) for polishing the processing surface W1 of the processing target wafer W.
- the particle size of the abrasive used in the first polishing section is larger than the particle size of the abrasive used in the second polishing section.
- the processing surface W1 is roughly polished in the first polishing section, and the processing surface W1 is finish-polished in the second polishing section.
- the general structure which performs a chemical polishing process is employable as a structure of the CMP apparatus 41.
- FIG. For example, processing may be performed in a so-called face-up state with the processing surface W1 of the processing target wafer W facing upward, or processing may be performed in a so-called face-down state with the processing surface W1 facing downward. .
- the first periphery removing device 42 and the second periphery removing device 43 remove the periphery of the processing target wafer W, respectively. That is, in the substrate processing system 1, the peripheral portion of the processing target wafer W is removed in two steps.
- the first peripheral edge removing device 42 has a chuck 200 as a substrate holding unit that holds the superposed wafer T (the processing target wafer W).
- the chuck 200 is supported by the chuck table 201, and is configured to be movable on the conveyance path 202 extending in the X-axis direction.
- the chuck 200 is configured to be rotatable by a rotation mechanism (not shown).
- the chuck table 201 and the transport path 202 constitute a moving mechanism of the present invention.
- the moving mechanism of the present invention may move the chuck 200 and the first grinding wheel 211 described later in the horizontal direction relatively, and may move the first grinding wheel 211 in the horizontal direction.
- both the chuck 200 and the first grinding wheel 211 may be moved in the horizontal direction.
- the first peripheral edge removing device 42 has a first peripheral edge removing portion 210 which is disposed above the chuck 200 and removes the peripheral edge portion of the processing target wafer W held by the chuck 200.
- the first peripheral edge removing unit 210 includes a first grinding wheel 211, a support wheel 212, a spindle 213, and a drive unit 214.
- the support wheel 212 to which the first grinding wheel 211 is fixed is supported by the spindle flange 213 a of the spindle 213, and the spindle 213 is provided with a driving unit 214.
- the drive unit 214 incorporates, for example, a motor (not shown) and rotates the first grinding wheel 211 and the support wheel 212 via the spindle 213.
- the spindle 213 and the drive unit 214 are configured to be able to move up and down by means of an elevation mechanism 215.
- each of the first grinding wheel 211 and the support wheel 212 has an annular shape (ring shape) in plan view.
- the first grinding wheel 211 includes abrasive grains, and abuts on the peripheral portion We of the processing target wafer W, and the peripheral portion We is ground and removed.
- the first grinding wheel 211 is provided in an annular shape, but the present invention is not limited to this.
- the first grinding wheel 211 may be divided and provided along the support wheel 212.
- the wafer to be processed W is moved in the horizontal direction so that the range in which the first grinding wheel 211 abuts on the wafer to be processed W matches the predetermined width determined in advance.
- the first grinding wheel 211 is disposed on the
- the first grinding wheel 211 and the superposed wafer T are respectively rotated while the first grinding wheel 211 is lowered and in contact with the peripheral portion We of the processing target wafer W. Grind and remove the peripheral portion We.
- the first grinding wheel 211 is moved vertically downward from the state in which the first grinding wheel 211 is in contact with the processing surface W1 of the processing target wafer W, whereby the peripheral edge portion We is lowered from above. Grind and remove.
- the second peripheral edge removing device 43 also has the same configuration as the first peripheral edge removing device 42. That is, as shown in FIGS. 1 and 4, the second peripheral edge removing device 43 includes the chuck 220, the chuck table 221, the transport path 222, and the second peripheral edge removing portion 230 (the second grinding wheel 231 and the support wheel 232). , Spindle 233, drive unit 234, and lifting mechanism 235). However, the grain size of the abrasive grains of the second grinding wheel 231 is smaller than the grain size of the abrasive grains of the first grinding wheel 211.
- the first cleaning device 44 has a spin chuck 300 for holding and rotating the superposed wafer T, and a scrub cleaning tool 301 provided with a brush, for example. Then, while rotating the superposed wafer T held by the spin chuck 300, the processing surface W1 is cleaned by bringing the scrub cleaning tool 301 into contact with the processing surface W1 of the processing target wafer W.
- the second cleaning apparatus 45 has a spin chuck 310 for holding and rotating the superposed wafer T, and a nozzle 311 for supplying a cleaning liquid, for example, pure water, to the processing surface W1 of the processing target wafer W. Then, while rotating the superposed wafer T held by the spin chuck 310, the cleaning liquid is supplied from the nozzle 311 to the processing surface W1 of the processing target wafer W. Then, the supplied cleaning liquid diffuses on the processing surface W1, and the processing surface W1 is cleaned.
- a cleaning liquid for example, pure water
- a cassette C containing a plurality of superposed wafers T is placed on the cassette mounting table 10 of the loading / unloading station 2.
- a superposed wafer T is stored such that the processing surface W1 of the processing target wafer W faces upward.
- the superposed wafer T in the cassette C is taken out by the wafer transfer apparatus 22 and the superposed wafer T is further transferred to the wafer transfer apparatus 32 through the transition apparatus (not shown), and the first processing station 3 is It is conveyed to the edge removing device 42.
- the peripheral edge portion We of the processing target wafer W is removed, but in the following description, the peripheral edge portion We removed by the first peripheral edge removing device 42 is referred to as a first peripheral edge portion We1. There is a case.
- the superposed wafer T transferred to the first edge removing device 42 is held by the chuck 200. Then, as shown in FIG. 7A, the first grinding wheel 211 is moved vertically downward, and while the first grinding wheel 211 is rotated, the first grinding wheel 211 contacts the first peripheral edge We1 of the processing target wafer W. Let At this time, in the first grinding wheel 211, the range in which the first grinding wheel 211 abuts on the processing target wafer W matches a first circumferential width L1 (the distance from the end of the processing target wafer W). Be placed.
- the first grinding wheel 211 and the overlapping wafer T are respectively rotated, as shown in FIG.
- the first grinding wheel 211 is further moved vertically downward.
- the first peripheral edge We1 is ground.
- the first grindstone wheel 211 moves to a predetermined first depth H1 (the distance from the processing surface W1 of the processing target wafer W).
- the first depth H1 is a depth at which the lower surface of the first grinding wheel 211 does not reach the adhesive G.
- the grinding speed (falling speed) of the first peripheral portion We1 by the first grinding wheel 211 can be increased. As a result, it is possible to grind the first peripheral edge We1 in a short time.
- the first grinding wheel 211 is raised while being rotated. At this time, the superposed wafer T is moved in the horizontal direction so as to be separated from the first grinding wheel 211.
- the first grinding wheel 211 is used. When the lower end of the wafer W is in contact with the upper end of the processing target wafer W, these may be hooked and a crack may be generated on the upper end of the processing target wafer W.
- the first peripheral edge We1 in the range of the first width L1 and the first depth H1 is removed, and the first peripheral edge removal processing is performed.
- the process ends (step P1 in FIG. 6).
- the superposed wafer T is transferred by the wafer transfer unit 32 to the second edge removing unit 43.
- the second edge removing device 43 also removes the edge portion We of the processing target wafer W, but in the following description, the edge portion We removed by the second edge removing device 43 is referred to as a second edge portion We2. There is a case.
- the superposed wafer T transferred to the second edge removing device 43 is held by the chuck 220. Then, as shown in FIG. 7E, the second grinding wheel 231 is moved vertically downward, and while the second grinding wheel 231 is rotated, the second grinding wheel 231 is in contact with the second peripheral portion We2 of the processing target wafer W. Let At this time, in the second grinding wheel 231, the range in which the second grinding wheel 231 abuts on the processing target wafer W matches the second width L2 in the circumferential direction (the distance from the end of the processing target wafer W). Be placed.
- the second grinding wheel 231 and the superposed wafer T are respectively rotated, as shown in FIG. 7 (f).
- the second grinding wheel 231 is further moved vertically downward.
- the second peripheral edge We2 is ground.
- the second grindstone wheel 231 moves to a predetermined second depth H2 (the distance from the processing surface W1 of the processing target wafer W).
- the second depth H2 is a depth at which the lower surface of the second grinding wheel 231 reaches the bonding surface S1 of the support wafer S.
- the second depth H2 can be set arbitrarily.
- the second depth H2 may be set to the height of the adhesive G, and the bonding surface S1 of the support wafer S may not be cut.
- the second width L2 of the second peripheral edge We2 to be ground for the second time is smaller than the first width L1 of the first peripheral edge We1 to be ground for the first time. That is, the second grinding wheel 231 is disposed outside the first grinding wheel 211 with respect to the peripheral edge portion We of the processing target wafer W. Then, on the outer side in the circumferential direction, the peripheral edge portion We remains by the range of the depth (H2-H1) and the width (L1-L2). As described above, since the grain size of the abrasive grains of the second grindstone wheel 231 is smaller than the grain size of the abrasive grains of the first grindstone wheel 211, the grinding speed by the second grindstone wheel 231 is determined by the first grindstone wheel 211.
- the side surface (hereinafter referred to as an exposed side surface) of the processing target wafer W exposed by removing the first peripheral edge portion We1 is together when grinding the processing surface W1 by the processing device 40 as described later. Removed. For this reason, even if the surface quality of the exposed side surface of the processing target wafer W is bad, the quality is not affected because it is finally removed.
- the second peripheral edge We2 in the range of the second width L2 and the second depth H2 is removed, and the second peripheral edge removal processing is performed.
- the process ends (step P2 in FIG. 6).
- the superposed wafer T is transferred by the wafer transfer unit 32 to the processing unit 40.
- the superposed wafer T transferred to the processing apparatus 40 is delivered to the alignment unit 120.
- the horizontal direction of the superposed wafer T is adjusted (Step P3 in FIG. 6).
- the superposed wafer T is transported by the transport unit 110 from the alignment unit 120 to the delivery position A0 and delivered to the chuck 101 at the delivery position A0. Thereafter, the rotary table 100 is rotated 90 degrees counterclockwise to move the chuck 101 to the first processing position A1. Then, the rough grinding unit 140 roughly grinds the processing surface W1 of the processing target wafer W (Step P4 in FIG. 6).
- the rotary table 100 is rotated 90 degrees counterclockwise to move the chuck 101 to the second processing position A2. Then, the processing surface W1 of the processing target wafer W is internally ground by the middle grinding unit 150 (Step P5 in FIG. 6).
- the finish grinding unit 160 performs finish grinding on the processing surface W1 of the processing target wafer W (Step P6 in FIG. 6).
- the processing surface W1 of the processing target wafer W is ground.
- the range of dotted lines illustrated in FIG. 7I is a range in which the processing surface W1 of the processing target wafer W is ground by the grinding units 140, 150, and 160, and corresponds to the first peripheral edge We1 described above. Exposure side is included.
- the depth to which the processing surface W1 of the processing target wafer W is ground is between the first depth H1 and the second depth H2.
- the rotary table 100 is rotated 90 degrees counterclockwise, or the rotary table 100 is rotated 270 degrees clockwise to move the chuck 101 to the delivery position A0.
- the processing surface W1 of the processing target wafer W is cleaned by the cleaning liquid discharged from the cleaning liquid nozzle (not shown) (Step P7 in FIG. 6).
- the superposed wafer T is transferred by the transfer unit 110 from the delivery position A0 to the cleaning unit 130. Then, in the cleaning unit 130, the non-bonding surface S2 of the support wafer S is cleaned and dried in a state where the superposed wafer T is held by the transfer pad 114 (Step P8 in FIG. 6).
- the superposed wafer T is transferred by the wafer transfer apparatus 32 to the CMP apparatus 41.
- the processing surface W1 of the processing target wafer W is polished (rough CMP) by the first polishing unit (not shown), and the processing of the processing target wafer W is further performed by the second polishing unit (not shown).
- the surface W1 is polished (finish CMP) (step P9 in FIG. 6).
- the superposed wafer T is transferred by the wafer transfer unit 32 to the first cleaning unit 44.
- the superposed wafer T transferred to the first cleaning device 44 is held by the spin chuck 300.
- the scrub cleaning tool 301 is brought into contact with the processing surface W1 of the processing target wafer W to clean the processing surface W1 (step P10 in FIG. 6).
- the cleaning in step P10 is to physically remove particles and the like on the processing surface W1, and is rough cleaning.
- the superposed wafer T is transferred by the wafer transfer unit 32 to the second cleaning unit 45.
- the superposed wafer T transferred to the second cleaning device 45 is held by the spin chuck 310.
- the cleaning liquid is supplied from the nozzle to the processing surface W1 of the processing target wafer W, and the processing surface W1 is cleaned (Step P11 in FIG. 6).
- the cleaning in this step P11 is a final finishing cleaning.
- the superposed wafer T subjected to all the processes is delivered from the wafer transfer device 32 to the wafer transfer device 22 and transferred to the cassette C of the cassette mounting table 10.
- a series of wafer processing in the substrate processing system 1 is completed.
- the peripheral portion We of the processing target wafer W is removed in two steps of step P1 and step P2.
- Step P1 since the particle size of the abrasive grains of the first grinding wheel 211 is large, the removal time of the first peripheral edge We1 can be shortened, and the throughput of wafer processing can be improved.
- the subsequent step P2 since the particle size of the abrasive grains of the second grinding wheel 231 is small, the surface roughness of the finished surface of the removed second peripheral edge portion We2 can be reduced.
- the time taken to remove the peripheral edge We is shortened, and the second peripheral edge We2 is exposed to grinding to expose the processing target wafer W.
- the surface texture of the surface can be improved.
- a series of processes can be continuously performed on a plurality of wafers W to be processed, and throughput can be improved.
- the bottom surface of the second peripheral edge We2 is The corner portion N (portion surrounded by a dotted line in the drawing) may be curved.
- a curved portion will remain on the end face of the processing target wafer W, and the peripheral portion We of the processing target wafer W becomes sharp. Chipping may occur at the peripheral portion We of the wafer W, and the processed wafer W may be damaged.
- step P2 by controlling the grinding speed by the second grinding wheel 231, the rotational speed of the second grinding wheel 231, and the like, the corner portion N of the second peripheral portion We2 shown in FIG. Curvature can be suppressed to some extent.
- the ground surface of the second grindstone wheel 231 wears, and the corner portion N of the second peripheral edge portion We2 tends to be curved.
- a dress board 400 as an adjustment unit is used.
- the dress board 400 has a circular shape in plan view, and has a step 401 at its peripheral edge.
- the dress board 400 is provided, for example, on the X-axis positive direction side of the second peripheral edge removing portion 230 inside the second peripheral edge removing device 43.
- a moving mechanism 410 is provided on the lower surface side of the dress board 400 to move and rotate the dress board 400 in the horizontal direction and the vertical direction.
- the moving mechanism 410 includes, for example, a shaft 411, two arms 412 and 413, and a driving unit 414.
- the shaft 411 is provided between the lower surface of the dress board 400 and the tip of the first arm 412.
- a rotating portion (not shown) is provided at the tip of the first arm 412, and the dressboard 400 is configured to be rotatable via the shaft 411 by this rotating portion.
- the first arm 412 and the second arm 413 are connected by a joint (not shown), by which the first arm 412 is configured to be pivotable around the proximal end.
- the second arm 413 is attached to the drive unit 414, and the second arm 413 is pivotable about the proximal end by the drive unit 414 and is configured to be movable in the vertical direction.
- the dress board 400 can be moved forward and backward with respect to the second peripheral edge removing unit 230 by the moving mechanism 410 having such a configuration.
- the dress board 400 is not limited to the inside of the 2nd periphery removal apparatus 43 mentioned above, It can install in arbitrary positions.
- the dress board 400 is placed on an installation site (not shown) such as a shelf provided outside the second peripheral edge removing device 43, and dressing is performed in a state of being held by the chuck 200. It is also good.
- the step portion 401 of the dressboard 400 is brought into contact with the peripheral edge portion of the second grindstone wheel 231 while rotating the second grindstone wheel 231 and the dressboard 400 respectively.
- the lower surface 231a and the outer side surface 231b are ground and flattened at the peripheral edge of the second grinding wheel 231. That is, in the second grinding wheel 231, the lower end of the second peripheral edge We2 shown in FIG.
- the corner portion N of the second peripheral edge We2 can be formed at a right angle, and the curve It can be suppressed.
- the surface condition of the lower surface 231a and the outer surface 231b in the peripheral portion of the second grinding wheel 231 may be inspected in advance using, for example, a laser displacement meter. Specifically, for example, the heights of the lower surface 231a and the outer surface 231b are measured. Then, when wear or an abnormal protrusion or the like is found on either or both of the lower surface 231a and the outer surface 231b as a result of the inspection, the dressing of the second grinding wheel 231 may be performed.
- the second grindstone wheel 231 may have a tapered shape in a side view.
- the diameter of the lower surface of the second grinding wheel 231 is made larger than the diameter of the upper surface, that is, the lower surface is protruded outward. In such a case, even if the second grindstone wheel 231 is worn, the lower end of the second grindstone wheel 231 has an acute angle in a side view, and the corner portion N of the second peripheral edge We2 is difficult to curve.
- the dressing of the second grindstone wheel 231 has been described, but it is preferable to perform dressing on the first grindstone wheel 211 using the same dress board 400.
- the configuration of the substrate processing system 1 is not limited to the above embodiment.
- the second peripheral edge removing unit 230 is provided in the second peripheral edge removing device 43 outside the processing device 40.
- the second peripheral edge removing portion 230 is disposed at the first processing position A1
- the rough grinding unit 140 and the finish grinding unit 160 are respectively disposed at the second processing position A2 and the third processing position A3.
- the middle grinding unit 150 is omitted.
- the first peripheral edge removing device 42 removes the first peripheral edge We1 of the processing target wafer W, but the range (the first width L1 and the first depth H1) is usually large. For this reason, even if the first grinding wheel 211 having a large particle size is used, it may take some time to remove the first peripheral edge We1.
- the range (the second width L2 and the second depth H2) of the second peripheral edge We2 to be removed by the second peripheral edge removing device 43 is usually small. Therefore, even if the second peripheral edge removing portion 230 is provided inside the processing device 40, the throughput in the processing device 40 is not reduced. Therefore, by providing the second peripheral edge removing portion 230 inside the processing apparatus 40 as in the present embodiment, it is also possible to improve the throughput of the entire wafer processing.
- the processing apparatus 40 In the substrate processing system 1 of the above embodiment, the processing apparatus 40, the CMP apparatus 41, the first peripheral edge removing apparatus 42, the second peripheral edge removing apparatus 43, the first cleaning apparatus 44, and the second cleaning apparatus 45.
- the number and arrangement can be designed arbitrarily.
- the first peripheral edge removing unit 210 and the second peripheral edge removing unit 230 are separately provided, but they may be combined.
- the first grinding wheel 211 and the second grinding wheel 231 are doubly concentrically attached to a common support wheel (not shown).
- the second grinding wheel 231 is disposed inside the first grinding wheel 211.
- the processing target wafer W and the support wafer S are bonded via the adhesive G.
- the adhesive G for example, the processing target wafer W is used by using a double-sided tape.
- the support wafer S may be bonded.
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Abstract
Description
先ず、本実施形態にかかる基板処理システムの構成について説明する。図1は、基板処理システム1の構成の概略を模式的に示す平面図である。なお、以下においては、位置関係を明確にするために、互いに直交するX軸方向、Y軸方向及びZ軸方向を規定し、Z軸正方向を鉛直上向き方向とする。
図3に示すように加工装置40は、回転テーブル100、搬送ユニット110、アライメントユニット120、洗浄ユニット130、粗研削ユニット140、中研削ユニット150、及び仕上研削ユニット160を有している。
図1に示したCMP装置41は、被処理ウェハWの加工面W1を研磨する研磨部(図示せず)を例えば2つ備えている。第1の研磨部で使用される砥粒の粒度は、第2の研磨部で使用される砥粒の粒度より大きい。そして、第1の研磨部において加工面W1を粗研磨し、第2の研磨部において加工面W1を仕上研磨する。なお、CMP装置41の構成には、化学研磨処理を行う一般的な構成を採用できる。例えば被処理ウェハWの加工面W1を上方に向けて、いわゆるフェイスアップの状態で処理を行ってもよいし、加工面W1を下方に向けて、いわゆるフェイスダウンの状態で処理を行ってもよい。
第1の周縁除去装置42と第2の周縁除去装置43は、それぞれ被処理ウェハWの周縁部を除去するものである。すなわち、基板処理システム1において、被処理ウェハWの周縁部は2段階で除去される。
図1に示すように第1の洗浄装置44では被処理ウェハWの加工面W1を粗洗浄し、第2の洗浄装置45では被処理ウェハWの加工面W1を仕上洗浄する。
次に、以上のように構成された基板処理システム1を用いて行われるウェハ処理について説明する。
以上の実施形態のステップP2において、第2の砥石ホイール231を用いて被処理ウェハWの第2の周縁部We2を除去した際、図8に示すように、第2の周縁部We2の底面のコーナー部N(図中の点線で囲った部分)が湾曲する場合がある。かかる場合、被処理ウェハWから支持ウェハSを剥離した後に、被処理ウェハWの端面に湾曲部分が残ることになり、被処理ウェハWの周縁部Weが鋭く尖った形状になるため、被処理ウェハWの周縁部Weでチッピングが発生し、被処理ウェハWが損傷を被るおそれがある。
基板処理システム1の構成は、上記実施形態に限定されるものではない。例えば上記実施形態の基板処理システム1では、第2の周縁除去部230は、加工装置40の外部の第2の周縁除去装置43に設けられていたが、図10に示すように加工装置40の内部に設けてもよい。かかる場合、第2の周縁除去部230は第1の加工位置A1に配置され、第2の加工位置A2と第3の加工位置A3にはそれぞれ粗研削ユニット140と仕上研削ユニット160が配置される。なお、この場合は、中研削ユニット150が省略される。
2 搬入出ステーション
3 処理ステーション
40 加工装置
41 CMP装置
42 第1の周縁除去装置
43 第2の周縁除去装置
50 制御部
140 粗研削ユニット
141 粗研削部
150 中研削ユニット
151 中研削部
160 仕上研削ユニット
161 仕上研削部
200 チャック
201 チャックテーブル
202 搬送路
210 第1の周縁除去部
211 第1の砥石ホイール
212 支持ホイール
213 スピンドル
214 駆動部
215 昇降機構
220 チャック
221 チャックテーブル
222 搬送路
230 第2の周縁除去部
231 第2の砥石ホイール
232 支持ホイール
233 スピンドル
234 駆動部
235 昇降機構
400 ドレスボード
G 接着剤
S 支持ウェハ
T 重合ウェハ
W 被処理ウェハ
W1 加工面
W2 非加工面
We(We1、We2) 周縁部(第1の周縁部、第2の周縁部)
Claims (17)
- 基板を処理する基板処理システムであって、
前記基板の周縁部に当接する第1の砥石を備え、前記周縁部を第1の深さまで研削して除去する第1の周縁除去部と、
前記基板の周縁部に当接する第2の砥石を備え、前記第1の周縁除去部によって前記周縁部を除去した後、さらに当該周縁部を前記第1の深さより深い第2の深さまで研削して除去する第2の周縁除去部と、を有し、
前記第2の砥石が備える砥粒の粒度は、前記第1の砥石が備える砥粒の粒度より小さい。 - 請求項1に記載の基板処理システムにおいて、
前記第2の周縁除去部によって前記周縁部を除去した後、前記基板の加工面を前記第1の深さと前記第2の深さの間まで研削する研削部を有する。 - 請求項1に記載の基板処理システムにおいて、
前記第1の周縁除去部によって前記周縁部を除去する前の前記基板の非加工面には、デバイスが形成されるとともに、当該デバイスを保護する保護材が設けられている。 - 請求項1に記載の基板処理システムにおいて、
前記第2の周縁除去部による前記周縁部の研削速度は、前記第1の周縁除去部による前記周縁部の研削速度よりも小さい。 - 請求項1に記載の基板処理システムにおいて、
前記第2の周縁除去部で除去される前記周縁部の周方向の幅は、前記第1の周縁除去部で除去される前記周縁部の周方向の幅よりも小さい。 - 請求項1に記載の基板処理システムにおいて、
前記第1の周縁除去部で前記周縁部を除去する際、前記基板を保持する基板保持部と、
前記第1の砥石を昇降させる昇降機構と、
前記第1の砥石と前記基板保持部を相対的に水平方向に移動させる移動機構と、を有する。 - 請求項1に記載の基板処理システムにおいて、
前記第2の周縁除去部で前記周縁部を除去する際、前記基板を保持する基板保持部と、
前記第2の砥石を昇降させる昇降機構と、
前記第2の砥石と前記基板保持部を相対的に水平方向に移動させる移動機構と、を有する。 - 請求項1に記載の基板処理システムにおいて、
前記第1の砥石の研削面又は前記第2の砥石の研削面を調整する調整部を有する。 - 基板を処理する基板処理方法であって、
前記基板の周縁部に第1の砥石を当接させて、前記周縁部を第1の深さまで研削して除去する第1の周縁除去工程と、
その後、前記基板の周縁部に第2の砥石を当接させて、前記周縁部を前記第1の深さより深い第2の深さまで研削して除去する第2の周縁除去工程と、を有し、
前記第2の砥石が備える砥粒の粒度は、前記第1の砥石が備える砥粒の粒度より小さい。 - 請求項9に記載の基板処理方法において、
前記第2の周縁除去工程の後、前記基板の加工面を前記第1の深さと前記第2の深さの間まで研削する研削工程を有する。 - 請求項9に記載の基板処理方法において、
前記第1の周縁除去工程の前の前記基板の非加工面には、デバイスが形成されるとともに、当該デバイスを保護する保護材が設けられている。 - 請求項9に記載の基板処理方法において、
前記第2の周縁除去工程における前記周縁部の研削速度は、前記第1の周縁除去工程における前記周縁部の研削速度よりも小さい。 - 請求項9に記載の基板処理方法において、
前記第2の周縁除去工程で除去される前記周縁部の周方向の幅は、前記第1の周縁除去工程で除去される前記周縁部の周方向の幅よりも小さい。 - 請求項9に記載の基板処理方法において、
前記第1の周縁除去工程において、
基板保持部に保持された前記基板の周縁部に前記第1の砥石を当接させた状態で、当該第1の砥石を下降させて前記周縁部を前記第1の深さまで研削し、
その後、前記第1の砥石を上昇させるとともに、前記第1の砥石と前記基板保持部を相対的に水平方向に移動させて離間させる。 - 請求項9に記載の基板処理方法において、
前記第2の周縁除去工程において、
基板保持部に保持された前記基板の周縁部に前記第2の砥石を当接させた状態で、当該第2の砥石を下降させて前記周縁部を前記第2の深さまで研削し、
その後、前記第2の砥石を上昇させるとともに、前記第2の砥石と前記基板保持部を相対的に水平方向に移動させて離間させる。 - 請求項9に記載の基板処理方法において、
前記第1の砥石の研削面又は前記第2の砥石の研削面を調整する調整工程を有する。 - 基板を処理する基板処理方法を基板処理システムによって実行させるように、当該基板処理システムを制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータであって、
前記基板処理方法は、
前記基板の周縁部に第1の砥石を当接させて、前記周縁部を第1の深さまで研削して除去する第1の周縁除去工程と、
その後、前記基板の周縁部に第2の砥石を当接させて、前記周縁部を前記第1の深さより深い第2の深さまで研削して除去する第2の周縁除去工程と、を有し、
前記第2の砥石が備える砥粒の粒度は、前記第1の砥石が備える砥粒の粒度より小さい。
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JPWO2019124031A1 (ja) | 2020-12-10 |
TW201927469A (zh) | 2019-07-16 |
TWI790319B (zh) | 2023-01-21 |
KR20200095564A (ko) | 2020-08-10 |
CN111480216B (zh) | 2023-09-29 |
KR102607483B1 (ko) | 2023-11-29 |
CN111480216A (zh) | 2020-07-31 |
JP6877585B2 (ja) | 2021-05-26 |
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