WO2018196072A1 - 一种阵列基板及光罩、显示装置 - Google Patents

一种阵列基板及光罩、显示装置 Download PDF

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Publication number
WO2018196072A1
WO2018196072A1 PCT/CN2017/085840 CN2017085840W WO2018196072A1 WO 2018196072 A1 WO2018196072 A1 WO 2018196072A1 CN 2017085840 W CN2017085840 W CN 2017085840W WO 2018196072 A1 WO2018196072 A1 WO 2018196072A1
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layer
disposed
common electrode
switching element
conductive
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PCT/CN2017/085840
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English (en)
French (fr)
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赵凯祥
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武汉华星光电技术有限公司
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Priority to US15/539,810 priority Critical patent/US10553615B2/en
Publication of WO2018196072A1 publication Critical patent/WO2018196072A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/047—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using sets of wires, e.g. crossed wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to an array substrate, a photomask, and a display device.
  • the switching of each frame is realized by scanning line scanning.
  • the scan line is formed of a metal material, the metal material has a resistance.
  • the voltage on the scan line decreases, a phenomenon known as voltage drop. As shown in FIG. 1, the voltage drop is from low to high as the distance between the pixel A, the pixel B, and the pixel C and the gate line scanning signal input end is from near to far.
  • the gate line voltage drop expression in the existing liquid crystal display panel is:
  • Vp represents the voltage drop value
  • C gs represents the capacitance between the gate line and the source/drain of the switching element
  • C lc represents the liquid crystal capacitance
  • C s represents the storage capacitance
  • V ghl represents the ideal input voltage and the actual input voltage. Difference. The direction from the near end of the gate line to the far end of the output (ie, from the near and far direction of the scanning signal driving circuit), the actual input voltage of the gate line gradually decreases, and the ideal input voltage does not change, so V ghl gradually increases.
  • FIG. 2 is a schematic diagram of voltage drop of pixel A, pixel B, and pixel C.
  • the voltage drop is from low to high, that is, V. a ⁇ V b ⁇ V c
  • V a represents the voltage drop of the pixel A
  • ⁇ V a represents the pixel A feedthrough voltage
  • V b represents the voltage drop of the pixel B
  • ⁇ V b represents the pixel B feedthrough voltage
  • V c represents the pixel C
  • the voltage drop, ⁇ V c represents the pixel B feedthrough voltage
  • V gh represents the gate line ideal input voltage. It can be seen from the above expression that ⁇ Vp causes the picture near the input end of the gate line to be brighter, and the picture away from the input end of the gate line is darker, which affects the uniformity of the panel display.
  • the present invention provides an array substrate, a reticle, and a display device for improving the uniformity of the panel display.
  • an array substrate comprising:
  • a substrate including a switching element and a gate line
  • a common electrode layer disposed on the substrate, which is provided with a common electrode and is provided with a plurality of first via holes at predetermined positions on the common electrode layer;
  • a passivation layer disposed on the common electrode layer and having a plurality of second vias concentrically disposed in one-to-one correspondence with the first via holes;
  • a pixel electrode layer disposed on the passivation layer, wherein a plurality of pixel electrodes are disposed and the switching element is connected through the corresponding second via hole;
  • the area of the first via hole gradually decreases.
  • the method further includes:
  • a touch wiring layer is disposed on the dielectric layer, and the passivation layer is disposed thereon.
  • the common electrode is used as a touch electrode, and a part of the wiring in the touch wiring layer is connected.
  • the switching element further comprises:
  • a channel layer disposed on the substrate and including a plurality of conductive channels
  • a second insulating layer disposed on the first conductive layer and the exposed first insulating layer
  • a second conductive layer disposed on the second insulating layer, including a source and a drain of the switching element, for connecting the channel layer;
  • the channel layer is made of a low temperature polysilicon material, which further includes An ion heavily doped region disposed at both ends of the conductive channel, the ion heavily doped region including a drain region connecting a drain of the switching element and a source region connecting a source of the switching element.
  • an ion lightly doped region is disposed between the conductive channel and the ion heavily doped region.
  • a light shielding layer is further disposed on the substrate corresponding to the conductive channel.
  • a third insulating layer is further disposed on the light shielding layer and the exposed substrate, and the channel layer is disposed thereon.
  • a photomask for fabricating the above array substrate the photomask being provided with a light transmissive region corresponding to the plurality of first via holes, along the array substrate
  • the output of the gate line is in the direction from the proximal end to the output end, and the area of the light-transmitting region is gradually reduced.
  • a display device comprising the above array substrate.
  • the invention gradually reduces the area of the first via hole on the common electrode layer along the output proximal end of the gate line to the output distal end, thereby changing each pixel in the direction from the output proximal end of the gate line to the output distal end.
  • the capacitance of the liquid crystal capacitor in the cell makes the voltage drop across the gate line equal, which improves the uniformity of the panel display.
  • 1 is a schematic diagram of wiring of an array substrate in the prior art
  • FIG. 2 is a schematic diagram showing waveforms of driving voltages of respective pixels corresponding to FIG. 1;
  • FIG. 3 is a schematic diagram showing a first via size gradation according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of an array substrate according to an embodiment of the present invention.
  • Figure 5 is a schematic view of the structure of a reticle in accordance with one embodiment of the present invention.
  • FIG. 4 is a schematic structural view of an array substrate according to an embodiment of the present invention, and the present invention will be described in detail below with reference to FIG. 4.
  • the array substrate includes a substrate, a common electrode layer 12, a passivation layer 13, and a pixel electrode layer 14.
  • the substrate includes a switching element and a gate line (not shown).
  • the common electrode layer 12 is disposed on the substrate, which is provided with the common electrode BITO and is provided with a plurality of first via holes 121 at predetermined positions on the common electrode layer 12.
  • the passivation layer 13 is disposed on the common electrode layer 12 and has a plurality of second via holes 131 that are concentrically disposed in one-to-one correspondence with the first via holes 121.
  • the pixel electrode layer 14 is disposed on the passivation layer 13 and is provided with a plurality of pixel electrodes TITO and connected to the switching elements through the corresponding second via holes 131.
  • the area of the first via 121 is gradually reduced to change the facing area of the common electrode and the pixel electrode of the plurality of pixel units.
  • the direction from the output proximal end of the gate line to the output distal end refers to the direction from the scanning signal driving circuit in the near and far directions, and the scanning signal driving circuit is used to output the scanning signal. .
  • the liquid crystal capacitance C lc affects the voltage drop value ⁇ Vp.
  • the liquid crystal layer between the array substrate and the color filter substrate can be equivalent to a liquid crystal capacitor.
  • the liquid crystal capacitor is connected to the pixel electrode at one end and to the common electrode at the other end.
  • the pixel electrode and the common electrode correspond to two plates of the liquid crystal capacitor.
  • liquid crystal capacitance C lc dielectric constant * area between electrodes / distance between electrodes, dielectric constant is the dielectric constant of liquid crystal molecular material, and the area between electrodes is the facing area of the pixel electrode and the common electrode, the electrode The distance between the pixel electrode and the common electrode (substantially the thickness of the liquid crystal layer).
  • the area of the plurality of first via holes is gradually reduced in the direction from the output near end to the output far end of the gate line so that the output near the output line of the gate line is in the direction of the output end.
  • the facing area of the upper common electrode and each pixel electrode gradually becomes larger as shown in FIG. In this way, the liquid crystal capacitor C lc can be gradually increased along the output end of the gate line to the output end, thereby making Become smaller.
  • V ghl gradually increases due to the direction from the output proximal end of the gate line to the output distal end, and Smaller, by adjusting the area of each first via, V ghl and The product remains unchanged, so that the voltage drops across the gate lines are equal, so that the voltage drops of the pixel electrodes in the pixel units on the gate lines are equal, so that the pixel electrode voltages in the pixel units on the gate lines are the same, and the voltage is increased.
  • the array substrate further includes a dielectric layer 15 and a touch wiring layer 16.
  • the dielectric layer 15 is disposed on the common electrode layer 12 for spacing the common electrode layer 12 and the touch wiring layer 16.
  • the touch wiring layer 16 is disposed on the dielectric layer, and the passivation layer 13 is disposed thereon.
  • the common electrode BITO is used as a touch electrode, and a part of the wiring in the touch wiring layer 16 is connected. Specifically, as shown in FIG. 4, the common electrode is connected to the first wiring M161, and the second wiring M162 is connected to other structures.
  • the switching element further includes a channel layer 111, a first insulating layer, a first conductive layer 113, a second insulating layer, a second conductive layer 115, and a planarization layer 116.
  • the channel layer 111 is disposed on the substrate 10 and includes a plurality of conductive channels 1111.
  • the first insulating layer is disposed on the channel layer 111, and includes an insulating layer 1121 composed of SiOx and an insulating layer 1122 composed of SiNx.
  • the first conductive layer 113 is disposed on the first insulating layer corresponding to the conductive channel 1111, and includes a gate G of the switching element.
  • the second insulating layer is disposed on the first conductive layer 113 and the exposed first insulating layer, and includes an insulating layer 1141 composed of SiOx and an insulating layer 1142 composed of SiNx.
  • the second conductive layer 115 is disposed on the second insulating layer, and includes a source S and a drain D of the switching element for connecting the channel layer.
  • the planarization layer 116 is disposed on the second conductive layer 115 and the exposed second insulating layer on which the common electrode layer 12 is disposed.
  • the channel layer 111 is made of a low temperature polysilicon material, including an ion heavily doped region N+ disposed at both ends of the conductive channel, and the ion heavily doped region N+ includes a drain D connected to the switching element. The drain region and the source region of the source S connecting the switching elements.
  • an ion lightly doped region is disposed between the conductive channel and the ion heavily doped region.
  • an ion lightly doped region N- is disposed between the conductive channel 1111 and the ion heavily doped region N+ for reducing the influence on the on-state current of the device.
  • the array substrate further includes a light shielding layer 171.
  • the light shielding layer 171 A corresponding conductive channel 1111 is disposed on the substrate 10 for preventing the backlight from illuminating the conductive channel and affecting the performance of the switching device, as shown in FIG.
  • the array substrate further includes a third insulating layer.
  • the third insulating layer is disposed on the light shielding layer 171 and the exposed substrate 10, and includes an insulating layer 1721 composed of SiOx and an insulating layer 1722 composed of SiNx, on which the channel layer 111 is disposed, as shown in FIG.
  • the reticle 21 is provided with a light-transmitting region 211 corresponding to the plurality of first via holes, along the output proximal end of the gate line on the array substrate to the output distal end, and the transparent region The area is gradually decreasing.
  • a display device includes the array substrate described above.
  • the array substrate includes a substrate 11, a common electrode layer 12, a passivation layer 13, and a pixel electrode layer 14.
  • the substrate 11 includes a switching element and a gate line (not shown).
  • the common electrode layer 12 is disposed on the substrate 11, which is provided with the common electrode BITO and is provided with a plurality of first via holes 121 at predetermined positions on the common electrode layer 12.
  • the passivation layer 13 is disposed on the common electrode layer 12 and has a plurality of second via holes 131 that are concentrically disposed in one-to-one correspondence with the first via holes 121.
  • the pixel electrode layer 14 is disposed on the passivation layer 13 and is provided with a plurality of pixel electrodes TITO and connected to the switching elements through the second via holes 131. Wherein, along the direction from the output proximal end of the gate line to the output distal end, the area of the first via 121 is gradually reduced to change the facing area of the common electrode and the plurality of pixel electrodes, thereby making the grid lines The pressure drop is equal, which improves the uniformity of the panel display.

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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

一种阵列基板及光罩、显示装置，该阵列基板包括：衬底；公共电极层(12)，其在公共电极层(12)上的预定位置设置有多个第一过孔(121)；钝化层(13)，具有多个与第一过孔(121)一一对应同心设置的第二过孔(131)；像素电极层(14)，其设置有多个像素电极，其中，沿栅线的输出近端至输出远端的方向，第一过孔(121)的面积逐渐减小。

Description

一种阵列基板及光罩、显示装置
相关申请的交叉引用
本申请要求享有2017年4月26日提交的名称为“一种阵列基板及光罩、显示装置”的中国专利申请CN201710280444.9的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明属于显示技术领域，具体地说，尤其涉及一种阵列基板及光罩、显示装置。
背景技术
在液晶显示面板进行画面显示时，每帧画面的切换是通过扫描线扫描的方式实现的。
由于扫描线由金属材料形成，金属材料具有电阻。随着传输距离的增大，扫描线上的电压会降低，这种现象称之为压降。如图1所示，随着像素A、像素B和像素C与栅线扫描信号输人端的距离由近至远，压降由低至高。
具体的，现有液晶显示面板中的栅线压降表示式为：
Figure PCTCN2017085840-appb-000001
其中，ΔVp表示压降值，Cgs表示栅线与开关元件的源极/漏极之间的电容，Clc表示液晶电容，Cs表示存储电容，Vghl表示理想输入电压与实际输入电压的差值。沿栅线输出近端至输出远端的方向(即距离扫描信号驱动电路由近及远方向)，栅线实际输入电压逐渐降低，理想输入电压不变，因此Vghl逐渐增大。
如图2所示为像素A、像素B和像素C的压降示意图，随着像素A、像素B和像素C与栅线扫描信号输入端的距离由近至远，压降由低至高，即Va＜Vb＜Vc，Va表示像素A的压降，ΔVa表示像素A馈通电压，Vb表示像素B的压降，ΔVb表示像素B馈通电压，Vc表示像素C的压降，ΔVc表示像素B馈通电压，Vgh表示栅线理想输入电压。由上述表达式可知，ΔVp会造成靠近栅线输入端的画面较亮， 远离栅线输入端的画面较暗，影响面板显示均一性。
发明内容
为解决以上问题，本发明提供了一种阵列基板及光罩、显示装置，用以提升面板显示的均一性。
根据本发明的一个方面，提供了一种阵列基板，包括：
衬底，其包括开关元件及栅线；
公共电极层，其设置于所述衬底上，其设置有公共电极且在所述公共电极层上的预定位置设置有多个第一过孔；
钝化层，其设置于所述公共电极层上，且具有多个与所述第一过孔一一对应同心设置的第二过孔；
像素电极层，其设置于所述钝化层上，其设置有多个像素电极且通过对应的所述第二过孔连接所述开关元件；
其中，沿所述栅线的输出近端至输出远端的方向，所述第一过孔的面积逐渐减小。
根据本发明的一个实施例，还包括：
介质层，其设置于所述公共电极层上；
触控布线层，其设置于所述介质层上，其上设置有所述钝化层。
根据本发明的一个实施例，所述公共电极用作触控电极，并连接所述触控布线层中的部分布线。
根据本发明的一个实施例，所述开关元件进一步包括：
沟道层，其设置于基底上，且包括多个导电沟道；
第一绝缘层，其设置于所述沟道层上；
第一导电层，其对应所述导电沟道设置于所述第一绝缘层上，包括所述开关元件的栅极；
第二绝缘层，其设置于所述第一导电层和裸露的第一绝缘层上；
第二导电层，其设置于所述第二绝缘层上，包括所述开关元件的源极和漏极，用于连接所述沟道层；
平坦层，其设置于所述第二导电层和裸露的第二绝缘层上，其上设置有所述公共电极层。
根据本发明的一个实施例，所述沟道层采用低温多晶硅材料制成，其还包括 设置于所述导电沟道两端的离子重掺杂区，所述离子重掺杂区包括连接所述开关元件的漏极的漏极区和连接所述开关元件的源极的源极区。
根据本发明的一个实施例，在所述导电沟道与所述离子重掺杂区之间设置有离子轻掺杂区。
根据本发明的一个实施例，还包括遮光层，其对应所述导电沟道设置于所述基底上。
根据本发明的一个实施例，还包括第三绝缘层，其设置于所述遮光层和裸露的基底上，其上设置有所述沟道层。
根据本发明的另一个方面，还提供了一种用于制作以上所述阵列基板的光罩，所述光罩设置有对应多个第一过孔的透光区域，沿所述阵列基板上的栅线的输出近端至输出远端的方向，所述透光区域的面积逐渐减小。
根据本发明的再一个方面，还提供了一种显示装置，包括以上所述的阵列基板。
本发明的有益效果：
本发明通过使公共电极层上的第一过孔的面积沿栅线的输出近端至输出远端的方向逐渐减小，进而改变沿栅线的输出近端至输出远端的方向的各像素单元中的液晶电容的电容值，使得栅线上各处的压降相等，提升面板显示的均一性。
本发明的其他优点、目标，和特征在某种程度上将在随后的说明书中进行阐述，并且在某种程度上，基于对下文的考察研究对本领域技术人员而言将是显而易见的，或者可以从本发明的实践中得到教导。本发明的目标和其他优点可以通过下面的说明书，权利要求书，以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本申请的技术方案或现有技术的进一步理解，并且构成说明书的一部分。其中，表达本申请实施例的附图与本申请的实施例一起用于解释本申请的技术方案，但并不构成对本申请技术方案的限制。
图1是现有技术中的一种阵列基板布线示意图；
图2是对应图1的各像素驱动电压波形示意图；
图3是根据本发明的一个实施例的第一过孔大小渐变示意图；
图4是根据本发明的一个实施例的阵列基板结构示意图；
图5是根据本发明的一个实施例的光罩结构示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成相应技术效果的实现过程能充分理解并据以实施。本申请实施例以及实施例中的各个特征，在不相冲突前提下可以相互结合，所形成的技术方案均在本发明的保护范围之内。
如图4所示为根据本发明的一个实施例的阵列基板结构示意图，以下参考图4来对本发明进行详细说明。
该阵列基板包括衬底、公共电极层12、钝化层13和像素电极层14。衬底包括开关元件及栅线(未示出)。公共电极层12设置于衬底上，其设置有公共电极BITO且在公共电极层12上的预定位置设置有多个第一过孔121。钝化层13设置于公共电极层12上，且具有多个与第一过孔121一一对应同心设置的第二过孔131。像素电极层14设置于钝化层13上，其设置有多个像素电极TITO且通过对应的第二过孔131连接开关元件。其中，沿栅线的输出近端至输出远端的方向，第一过孔121的面积逐渐减小，用以改变公共电极与多个像素单元中的像素电极的正对面积。此处的沿栅线的输出近端至输出远端的方向(如图4中的箭头标注方向)指的是距离扫描信号驱动电路由近及远的方向，扫描信号驱动电路用于输出扫描信号。
由液晶显示面板中的栅线压降表达式可知，液晶电容Clc影响压降值ΔVp。Clc越大，ΔVp越小；Clc越小，ΔVp越大。在液晶显示面板中，可以将阵列基板和彩膜基板之间的液晶层等效为一个液晶电容。该液晶电容一端连接像素电极，另一端连接公共电极。像素电极和公共电极相当于液晶电容的两个极板。基于液晶电容计算公式：液晶电容Clc＝介电常数*电极间面积/电极间距离，介电常数为液晶分子材料的介电常数，电极间面积为像素电极和公共电极的正对面积，电极间距离为像素电极和公共电极之间的距离(实质为液晶层的厚度)。
由液晶电容Clc计算公式可知，像素电极和公共电极正对的面积越大，液晶电容Clc越大，ΔVp越小，反之亦然。因此，在本发明中，沿栅线的输出近端至输出远端的方向，将多个第一过孔的面积设置为逐渐减小，使得沿栅线的输出近端至输出远端的方向上公共电极与各像素电极的正对面积逐渐变大，如图3所示。这样就可以使得液晶电容Clc沿栅线的输出近端至输出远端的方向逐渐变大，进 而使得
Figure PCTCN2017085840-appb-000002
变小。由于沿栅线的输出近端至输出远端的方向，Vghl逐渐增大，而
Figure PCTCN2017085840-appb-000003
变小，通过调整各第一过孔的面积，可使得栅线上各处Vghl与
Figure PCTCN2017085840-appb-000004
的乘积保持不变，使得栅线上各处的压降相等，进而使得栅线上各处像素单元中像素电极的压降相等，从而使得栅线上各处像素单元中像素电极电压相同，提升面板显示的均一性。
在本发明的一个实施例中，该阵列基板还包括介质层15和触控布线层16。如图4所示，介质层15设置于公共电极层12上，用于间隔公共电极层12和触控布线层16。触控布线层16设置于介质层上，其上设置有钝化层13。
在本发明的一个实施例中，该公共电极BITO用作触控电极，并连接触控布线层16中的部分布线。具体的，如图4所示，公共电极连接第一布线M161，第二布线M162连接其他结构。
在本发明的一个实施例中，该开关元件进一步包括沟道层111、第一绝缘层、第一导电层113、第二绝缘层、第二导电层115和平坦层116。其中，沟道层111设置于基底10上，且包括多个导电沟道1111。第一绝缘层设置于沟道层111上，包括由SiOx构成的绝缘层1121和由SiNx构成的绝缘层1122。第一导电层113对应导电沟道1111设置于第一绝缘层上，包括开关元件的栅极G。第二绝缘层设置于第一导电层113和裸露的第一绝缘层上，包括由SiOx构成的绝缘层1141和由SiNx构成的绝缘层1142。第二导电层115设置于第二绝缘层上，包括开关元件的源极S和漏极D，用于连接沟道层。平坦层116设置于第二导电层115和裸露的第二绝缘层上，其上设置有公共电极层12。
在本发明的一个实施例中，该沟道层111采用低温多晶硅材料制成，包括设置于导电沟道两端的离子重掺杂区N+，离子重掺杂区N+包括连接开关元件的漏极D的漏极区和连接开关元件的源极S的源极区。
在本发明的一个实施例中，在导电沟道与离子重掺杂区之间设置有离子轻掺杂区。具体的，如图4所示，在导电沟道1111与离子重掺杂区N+之间设置有离子轻掺杂区N-，用于减小对器件开态电流的影响。
在本发明的一个实施例中，该阵列基板还包括遮光层171。其中，遮光层171 对应导电沟道1111设置于基底10上，用于防止背光照射导电沟道，影响开关器件性能，如图4所示。
在本发明的一个实施例中，该阵列基板还包括第三绝缘层。其中，第三绝缘层设置于遮光层171和裸露的基底10上，包括由SiOx构成的绝缘层1721和由SiNx构成的绝缘层1722，其上设置有沟道层111，如图4所示。
根据本发明的另一个方面，还提供了一种光罩，该光罩用于制作以上所述的阵列基板。具体的，如图5所示，该光罩21设置有对应多个第一过孔的透光区域211，沿阵列基板上的栅线的输出近端至输出远端的方向，透光区域的面积逐渐减小。
根据本发明的再一个方面，还提供了一种显示装置。该显示装置包括以上所述的阵列基板。该阵列基板包括衬底11、公共电极层12、钝化层13和像素电极层14。衬底11包括开关元件及栅线(未示出)。公共电极层12设置于衬底11上，其设置有公共电极BITO且在公共电极层12上的预定位置设置有多个第一过孔121。钝化层13设置于公共电极层12上，且具有多个与第一过孔121一一对应同心设置的第二过孔131。像素电极层14设置于钝化层13上，其设置有多个像素电极TITO且通过第二过孔131连接开关元件。其中，沿栅线的输出近端至输出远端的方向，第一过孔121的面积逐渐减小，用以改变公共电极与多个像素电极的正对面积，进而使得栅线上各处的压降相等，进而提高面板显示的均一性。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (17)

  1. 一种阵列基板，包括：
    衬底，其包括开关元件及栅线；
    公共电极层，其设置于所述衬底上，其设置有公共电极且在所述公共电极层上的预定位置设置有多个第一过孔；
    钝化层，其设置于所述公共电极层上，且具有多个与所述第一过孔一一对应同心设置的第二过孔；
    像素电极层，其设置于所述钝化层上，其设置有多个像素电极且通过对应的所述第二过孔连接所述开关元件；
    其中，沿所述栅线的输出近端至输出远端的方向，所述第一过孔的面积逐渐减小。
  2. 根据权利要求1所述的阵列基板，其中，还包括：
    介质层，其设置于所述公共电极层上；
    触控布线层，其设置于所述介质层上，其上设置有所述钝化层。
  3. 根据权利要求2所述的阵列基板，其中，所述公共电极用作触控电极，并连接所述触控布线层中的部分布线。
  4. 根据权利要求1所述的阵列基板，其中，所述开关元件包括：
    沟道层，其设置于基底上，且包括多个导电沟道；
    第一绝缘层，其设置于所述沟道层上；
    第一导电层，其对应所述导电沟道设置于所述第一绝缘层上，并包括所述开关元件的栅极；
    第二绝缘层，其设置于所述第一导电层和裸露的第一绝缘层上；
    第二导电层，其设置于所述第二绝缘层上，包括所述开关元件的源极和漏极，用于连接所述沟道层；
    平坦层，其设置于所述第二导电层和裸露的第二绝缘层上，其上设置有所述公共电极层。
  5. 根据权利要求4所述的阵列基板，其中，所述沟道层采用低温多晶硅材料制成，其还包括设置于所述导电沟道两端的离子重掺杂区，所述离子重掺杂区包括连接所述开关元件的漏极的漏极区和连接所述开关元件的源极的源极区。
  6. 根据权利要求5所述的阵列基板，其中，在所述导电沟道与所述离子重掺杂区之间设置有离子轻掺杂区。
  7. 根据权利要求6所述的阵列基板，其中，还包括遮光层，其对应所述导电沟道设置于所述基底上。
  8. 根据权利要求7所述的阵列基板，其中，还包括第三绝缘层，其设置于所述遮光层和裸露的基底上，其上设置有所述沟道层。
  9. 一种用于制作阵列基板的光罩，其中，所述光罩设置有对应多个第一过孔的透光区域，沿所述阵列基板上的栅线的输出近端至输出远端的方向，所述透光区域的面积逐渐减小。
  10. 一种显示装置，包括阵列基板，所述阵列基板包括：
    衬底，其包括开关元件及栅线；
    公共电极层，其设置于所述衬底上，其设置有公共电极且在所述公共电极层上的预定位置设置有多个第一过孔；
    钝化层，其设置于所述公共电极层上，且具有多个与所述第一过孔一一对应同心设置的第二过孔；
    像素电极层，其设置于所述钝化层上，其设置有多个像素电极且通过对应的所述第二过孔连接所述开关元件；
    其中，沿所述栅线的输出近端至输出远端的方向，所述第一过孔的面积逐渐减小。
  11. 根据权利要求10所述的显示装置，其中，还包括：
    介质层，其设置于所述公共电极层上；
    触控布线层，其设置于所述介质层上，其上设置有所述钝化层。
  12. 根据权利要求11所述的显示装置，其中，所述公共电极用作触控电极，并连接所述触控布线层中的部分布线。
  13. 根据权利要求10所述的显示装置，其中，所述开关元件包括：
    沟道层，其设置于基底上，且包括多个导电沟道；
    第一绝缘层，其设置于所述沟道层上；
    第一导电层，其对应所述导电沟道设置于所述第一绝缘层上，并包括所述开关元件的栅极；
    第二绝缘层，其设置于所述第一导电层和裸露的第一绝缘层上；
    第二导电层，其设置于所述第二绝缘层上，包括所述开关元件的源极和漏极，用于连接所述沟道层；
    平坦层，其设置于所述第二导电层和裸露的第二绝缘层上，其上设置有所述 公共电极层。
  14. 根据权利要求13所述的显示装置，其中，所述沟道层采用低温多晶硅材料制成，其还包括设置于所述导电沟道两端的离子重掺杂区，所述离子重掺杂区包括连接所述开关元件的漏极的漏极区和连接所述开关元件的源极的源极区。
  15. 根据权利要求14所述的显示装置，其中，在所述导电沟道与所述离子重掺杂区之间设置有离子轻掺杂区。
  16. 根据权利要求15所述的显示装置，其中，还包括遮光层，其对应所述导电沟道设置于所述基底上。
  17. 根据权利要求16所述的显示装置，其中，还包括第三绝缘层，其设置于所述遮光层和裸露的基底上，其上设置有所述沟道层。
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