WO2018188448A1 - 一种交联纳米颗粒薄膜及制备方法与薄膜光电子器件 - Google Patents

一种交联纳米颗粒薄膜及制备方法与薄膜光电子器件 Download PDF

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WO2018188448A1
WO2018188448A1 PCT/CN2018/079025 CN2018079025W WO2018188448A1 WO 2018188448 A1 WO2018188448 A1 WO 2018188448A1 CN 2018079025 W CN2018079025 W CN 2018079025W WO 2018188448 A1 WO2018188448 A1 WO 2018188448A1
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film
nanoparticle
thin film
crosslinked
nanoparticle film
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PCT/CN2018/079025
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English (en)
French (fr)
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陈崧
钱磊
杨一行
曹蔚然
向超宇
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Tcl集团股份有限公司
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Priority claimed from CN201710233270.0A external-priority patent/CN108695137B/zh
Priority claimed from CN201710232650.2A external-priority patent/CN108695376B/zh
Priority claimed from CN201710232916.3A external-priority patent/CN108695413B/zh
Priority claimed from CN201710232917.8A external-priority patent/CN108695406B/zh
Priority claimed from CN201710232910.6A external-priority patent/CN108695405B/zh
Application filed by Tcl集团股份有限公司 filed Critical Tcl集团股份有限公司
Priority to US16/603,772 priority Critical patent/US20200313089A1/en
Priority to EP18784835.3A priority patent/EP3611756A4/en
Priority to JP2020502747A priority patent/JP7075476B2/ja
Priority to KR1020197028863A priority patent/KR102260236B1/ko
Publication of WO2018188448A1 publication Critical patent/WO2018188448A1/zh
Priority to US17/874,934 priority patent/US11778891B2/en

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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/0259—Microstructure
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
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    • H10K71/10—Deposition of organic active material
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    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers

Definitions

  • the invention relates to the field of device film preparation, in particular to a crosslinked nano particle film, a preparation method and a film optoelectronic device.
  • Oxide nanoparticles (or spherical oxide nanocrystals) have a good degree of crystallization, which ensures optical and electrical properties similar to those of bulk materials (low-dimensional materials); on the other hand, due to the self-assembly of nanoparticles into films Very good, enabling a low cost coating preparation process to be applied.
  • nanoparticles are one of the important solutions for forming corresponding oxide films.
  • Common examples include zinc oxide (ZnO x ) nanoparticles, thin films of titanium oxide (TiO x ) particles as light-emitting diodes, thin film solar cells, thin film transistors as semiconductor materials for transporting electrons; nickel oxide (NiO x ) in the same device As a semiconductor material that transports holes.
  • the present invention aims to provide a crosslinked nanoparticle film, a preparation method thereof and a thin film optoelectronic device, which aims to solve a high carrier transport barrier of a conventional device film, and carrier migration. The problem is lower.
  • a method for preparing a crosslinked nanoparticle film comprising:
  • Step A dispersing the nanoparticles in a solvent and uniformly mixing to obtain a nanoparticle solution
  • Step B forming a nanoparticle film by a solution method, and introducing a combined gas to promote a crosslinking reaction to obtain a crosslinked nanoparticle film.
  • the method for preparing a crosslinked nanoparticle film wherein the combined gas comprises a reducing gas, oxygen, water vapor, and carbon dioxide.
  • the method for preparing a crosslinked nanoparticle film wherein the reducing gas bias is controlled between 1 and 100 Pa, the oxygen bias is controlled between 0 and 2 ⁇ 10 4 Pa, and the water vapor bias is controlled at 0 to 2. Between ⁇ 10 3 Pa, the carbon dioxide bias is controlled between 0 and 100 Pa.
  • the method for preparing a crosslinked nanoparticle film wherein the mass concentration of the nanoparticle solution in the step A is 1 to 100 mg/ml.
  • the method for preparing a crosslinked nanoparticle film wherein the nanoparticle is one or more of an oxide nanoparticle, a sulfide nanoparticle, a selenide nanoparticle, a nitride nanoparticle, and a fluoride nanoparticle. .
  • the method for preparing a crosslinked nanoparticle film wherein the solvent is an alcohol solvent.
  • step B specifically comprises:
  • Step B1 First, the nanoparticle solution is placed in a closed environment, and the nanoparticle solution is formed into a nanoparticle film by a solution method;
  • step B2 a combined gas is introduced into the closed environment to cause a crosslinking reaction to occur, thereby obtaining a crosslinked nanoparticle film.
  • step B specifically comprises:
  • Step B1' first placing the nanoparticle solution in an inert gas environment, and forming the nanoparticle solution into a nanoparticle film by a solution method;
  • step B2' the nanoparticle film is then placed in a closed environment, and a combined gas is introduced into the closed environment to cause a crosslinking reaction to occur, thereby obtaining a crosslinked nanoparticle film.
  • the method for producing a crosslinked nanoparticle film wherein the reducing gas is one of carbon monoxide, hydrogen, and ammonia.
  • the method for preparing a crosslinked nanoparticle film wherein in the step B, the crosslinked nanoparticle film has a thickness of 15 to 60 nm.
  • a thin film optoelectronic device comprising a crosslinked nanoparticle film as described above.
  • the thin film optoelectronic device wherein the thin film optoelectronic device is any one of an electroluminescent device, a thin film photovoltaic, a thin film photodetector, and a thin film transistor.
  • the thin film optoelectronic device wherein the electroluminescent device comprises: a first electrode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a second electrode; the material of the electron transport layer is The crosslinked nanoparticle film formed by the cross-linking treatment of the nanoparticle film.
  • the thin film photovoltaic device wherein the thin film photovoltaic device comprises: a first electrode, a light-emitting layer, an electron extraction layer, and a second electrode; and the material of the electron extraction layer is a cross-linking treatment of the nano-particle film Combined with nanoparticle film.
  • the thin film photoelectron device wherein the thin film photodetector comprises: an anode, an electron blocking layer, a light absorbing layer, a hole blocking layer and a cathode; and the material of the hole blocking layer is a nanoparticle film subjected to crosslinking treatment A crosslinked nanoparticle film.
  • the thin film optoelectronic device wherein the semiconductor layer material of the thin film transistor is a crosslinked nanoparticle film formed by cross-linking a nanoparticle film.
  • the invention has the beneficial effects that the invention cross-links the particles when the nanoparticles are formed, so as to increase the electrical coupling between the particles, reduce the barrier of carrier transport, increase the carrier mobility, and greatly improve the electrical performance.
  • the nanoparticle film thus prepared can significantly improve the performance of the thin film optoelectronic device.
  • FIG. 1 is a schematic view showing the structure of a conventional uncrosslinked zinc oxide nanoparticle film.
  • FIG. 2 is a schematic view showing the structure of a crosslinked zinc oxide nanoparticle film prepared by the method of the present invention.
  • Figure 3 is a schematic diagram of current-voltage curves for different thin film pairs of ITO/NPB/MoO x /Al devices.
  • FIG. 4 is a schematic structural view of a preferred embodiment of an electroluminescent device in an embodiment of a thin film optoelectronic device of the present invention.
  • FIG. 5 is a schematic structural view of a preferred embodiment of a thin film photovoltaic device in an embodiment of a thin film optoelectronic device of the present invention.
  • FIG. 6 is a schematic structural view of a preferred embodiment of a thin film photodetector in an embodiment of a thin film optoelectronic device of the present invention.
  • FIG. 7a is a first schematic structural view of a preferred embodiment of a thin film transistor in an embodiment of a thin film optoelectronic device of the present invention.
  • 7b is a second schematic structural view of a preferred embodiment of a thin film transistor in an embodiment of a thin film optoelectronic device of the present invention.
  • FIG. 8 is a third schematic structural diagram of a preferred embodiment of a thin film transistor in an embodiment of a thin film optoelectronic device of the present invention.
  • FIG. 9 is a fourth schematic structural view of a preferred embodiment of a thin film transistor in an embodiment of a thin film optoelectronic device of the present invention.
  • the present invention provides a crosslinked nanoparticle film, a preparation method thereof and a thin film optoelectronic device.
  • the present invention will be further described in detail below in order to make the objects, technical solutions and effects of the present invention more clear and clear. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
  • a preferred embodiment of a method for preparing a crosslinked nanoparticle film of the present invention comprising:
  • Step A dispersing the nanoparticles in a solvent and uniformly mixing to obtain a nanoparticle solution
  • the step A is specifically: dispersing the nanoparticles in a solvent at a mass concentration of 1 to 100 mg/ml, mixing and mixing until uniform, and preparing a nanoparticle solution for film formation by a solution method.
  • the nanoparticles may be one or more of a wide band gap oxide nanoparticle, a sulfide nanoparticle, a selenide nanoparticle, a nitride nanoparticle, and a fluoride nanoparticle
  • the oxide nanoparticle may Is, but not limited to, one of ZnO x (such as ZnO), TiO x (such as TiO 2 ), and the like
  • the sulfide nanoparticles may be, but not limited to, one of zinc sulfide and molybdenum sulfide
  • the particles may be, but are not limited to, one of zinc selenide and lead selenide
  • the nitride nanoparticles may be, but not limited to, one of silicon nitrid
  • the present invention controls the size of the nanoparticles, preferably controlling the average diameter of the spherical nanoparticles to within 5 nm to ensure that a sufficient amount of surface state metal atoms can participate in the reaction.
  • the solvent may be an alcohol solvent such as methanol, ethanol or the like.
  • Step B forming a nanoparticle film by a solution method, and introducing a combined gas to promote a crosslinking reaction to obtain a crosslinked nanoparticle film.
  • the present invention deposits a film by a solution method, which may be spin coating, ink jet printing, spray coating, blade coating, or the like.
  • the combined gas includes a reducing gas, oxygen, water vapor, and carbon dioxide.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa
  • the oxygen bias is controlled between 0 and 2 x 10 4 Pa
  • the water vapor bias is controlled at 0 to 2.
  • Between ⁇ 10 3 Pa and carbon dioxide bias are controlled between 0 and 100 Pa.
  • the present invention controls the combined gas in contact with the membrane, preferably controlling the combined gas in contact with the membrane within the above-mentioned bias range, because the density of the film produced in the biasing range is higher, and the film is loaded in the film.
  • the electron mobility of the electrons will also be high.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, and the oxygen bias is controlled between 0 and 1 ⁇ 10 3 Pa.
  • the pressure is controlled between 0 and 1 x 10 3 Pa, and the carbon dioxide bias is controlled between 0 and 100 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, and the oxygen bias is controlled between 0 and 1 ⁇ 10 4 Pa.
  • the pressure is controlled between 0 and 2 x 10 3 Pa, and the carbon dioxide bias is controlled between 0 and 100 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, and the oxygen bias is controlled between 0 and 5 ⁇ 10 3 Pa.
  • the pressure is controlled between 0 and 2 x 10 3 Pa, and the carbon dioxide bias is controlled between 0 and 100 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, the oxygen bias is controlled to be less than 0.1 Pa, and the water vapor bias is controlled at 0 to 2. Between ⁇ 10 3 Pa and carbon dioxide bias are controlled between 0 and 100 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, the oxygen bias is controlled to be less than 0.1 Pa, and the water vapor bias is controlled at 0 to 2. Between ⁇ 10 3 Pa and carbon dioxide bias are controlled between 0 and 100 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, the oxygen bias is controlled to be less than 0.1 Pa, and the water vapor bias is controlled at 0 to between 1 ⁇ 10 2 Pa, the bias control of carbon dioxide between 0 ⁇ 10Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, the oxygen bias is controlled to be less than 0.1 Pa, and the water vapor bias is controlled to be less than 0.1. Pa, carbon dioxide bias is controlled between 0 and 100 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa
  • the oxygen bias is controlled at 0.1 to 1 Pa
  • the water vapor bias is controlled at 0 to Between 2 ⁇ 10 3 Pa
  • the carbon dioxide bias is controlled between 0 and 100 Pa.
  • nitrogen gas is maintained at about 1 ⁇ 10 5 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, the oxygen bias is controlled to be less than 0.1 Pa, and the water vapor bias is controlled at 0 to Between 2 ⁇ 10 3 Pa, the carbon dioxide bias is controlled between 10 and 100 Pa. Further, nitrogen gas is maintained at about 1 ⁇ 10 5 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, the oxygen bias is controlled to be less than 0.1 Pa, and the water vapor bias is controlled at 0 to Between 1 ⁇ 10 2 Pa, the carbon dioxide bias is controlled between 0 and 10 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the bias of the reducing gas (such as carbon monoxide, hydrogen or ammonia) is controlled between 1 and 100 Pa, the oxygen bias is controlled to be less than 0.1 Pa, and the water vapor bias is controlled at 0 to Between 2 ⁇ 10 3 Pa, the carbon dioxide bias is controlled between 10 and 100 Pa.
  • the film produced in this bias range will have a higher density and a higher carrier electron mobility in the film.
  • the invention cross-links the nanoparticles at the time of film formation, and the cross-linking means that there is a substance filling between the nanoparticles and the nanoparticles are connected by chemical bonds. Correspondingly, there is no substance linked by chemical bonds between the uncrosslinked nanoparticles.
  • the present invention can increase the density and carrier mobility of the corresponding film by the above crosslinking method.
  • the present invention can directly form the nanoparticle solution into a nanoparticle film under non-vacuum conditions.
  • the step B specifically includes:
  • Step B1 First, the nanoparticle solution is placed in a closed environment, and the nanoparticle solution is formed into a nanoparticle film by a solution method;
  • step B2 a combined gas is introduced into the closed environment to cause a crosslinking reaction to occur, thereby obtaining a crosslinked nanoparticle film.
  • the nanoparticle solution is made into a nanoparticle film under closed non-vacuum conditions, and then the combined gas is introduced into the sealed environment to promote the crosslinking reaction to obtain a crosslinked nanoparticle film.
  • the invention is not limited to the preparation of the crosslinked nanoparticle film in the above gas environment, and the nanoparticle film can be first prepared under an inert gas condition, and the obtained nanoparticle film is placed in a closed environment, and then the combined gas is introduced to promote the delivery.
  • the coupling reaction takes place to obtain a crosslinked nanoparticle film.
  • the step B specifically includes:
  • Step B1' first placing the nanoparticle solution in an inert gas environment, and forming the nanoparticle solution into a nanoparticle film by a solution method;
  • step B2' the nanoparticle film is then placed in a closed environment, and a combined gas is introduced into the closed environment to cause a crosslinking reaction to occur, thereby obtaining a crosslinked nanoparticle film.
  • the crosslinked nanoparticle film is further dried to finally obtain a crosslinked nanoparticle film having a thickness of 15 to 60 nm.
  • the drying temperature is higher than the boiling point of the solvent in the nanoparticle solution; according to the film thickness, the drying time is more than 15 minutes per 50 nm.
  • the present invention also provides a crosslinked nanoparticle film prepared by the method for preparing a crosslinked nanoparticle film according to any of the above.
  • a typical nanoparticle film is self-assembled from nanoparticles that are not cross-linked to each other.
  • a combined gas is introduced to promote cross-linking between the particles, thereby increasing electrical coupling between the particles.
  • the barrier of carrier transport is reduced, and the carrier mobility is increased, thereby greatly improving the electrical performance.
  • the use of the thus obtained crosslinked nanoparticle film in a light-emitting diode such as a solution method, a thin film solar cell, a photodetector, and a thin film transistor can significantly improve the performance of the above device.
  • FIG. 1 is a schematic structural view of a conventional uncrosslinked zinc oxide nanoparticle film
  • FIG. 2 is a schematic structural view of a crosslinked zinc oxide nanoparticle film prepared by the method of the present invention
  • FIG. 3 is a different film pair ITO/ Schematic diagram of current-voltage curves for NPB/MoO x /Al devices.
  • Fig. 1 there is no substance bonded by chemical bonds between the uncrosslinked nanoparticles 1; as can be seen from Fig.
  • the current of ITO/NPB/MoO x /Al structure is obviously inhibited; while the uncrosslinked ZnO nanoparticle film is immersed in an alcohol solvent (such as ethanol), the current is significantly increased, indicating that it is not crosslinked.
  • the ZnO nanoparticle film is detached during the immersion process, so that the current of the response device is significantly increased, and is very close to the device without adding the ZnO nanoparticle film. Therefore, the crosslinked zinc oxide nanoparticle film obtained by crosslinking the zinc oxide nanoparticles has no obvious dissolution or substance detachment after being soaked in the original solvent (the solvent used for dispersing the zinc oxide nanoparticles, usually an alcohol solvent); The uncrosslinked nanoparticle film is easily peeled off after soaking.
  • an alcohol solvent such as ethanol
  • the present invention also provides a thin film optoelectronic device comprising the crosslinked nanoparticle film as described above.
  • the thin film optoelectronic device is any one of an electroluminescent device, a thin film photovoltaic, a thin film photodetector, and a thin film transistor.
  • the electroluminescent device includes: a first electrode 10, a hole injection layer 20, a hole transport layer 30, a light emitting layer 40, and an electron transport layer. 50 and the second electrode 60; the material of the electron transport layer 50 is a crosslinked nanoparticle film formed by crosslinking treatment of the nanoparticle film.
  • the first electrode and the second electrode has a high light transmittance for a light band emitted by the light emitting layer.
  • the first electrode may be selected from One or more of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (AZO); preferably, the first The electrode is ITO.
  • the material of the hole transport layer may be selected from poly [bis(4-phenyl)(4-butylphenyl)amine], 4-butyl-N,N-diphenyl Alkyl aniline homopolymer, aniline, 4-butyl-N,N-diphenyl, homopolymer (Poly-TPD), poly(9,9-dioctylfluorene-CO-N-(4-butyl) Phenyl)diphenylamine) (TFB), poly(9-vinylcarbazole) (PVK), TPD, Spiro-TPD, LG101, HAT-CN, PEDOT: PSS, TAPC, a-NPB, m-MTDATA, NixO, MoOx, VOx, WOx or a mixture thereof; preferably, the hole transport layer is poly-TPD.
  • the hole transport layer has a thickness of 10 to 100 nm.
  • the material of the quantum dot light-emitting layer includes, but is not limited to, nanocrystals of II-VI semiconductor, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary, ternary, quaternary II-VI compounds; III-V semiconductor nanocrystals such as GaP, GaAs, InP, InAs and other binary, ternary, quaternary III-V
  • the quantum dot luminescent material for electroluminescence is not limited to II-V compound, III-VI compound, IV-VI compound, I-III-VI compound, II-IV-VI group. Compound, group IV elemental.
  • the second electrode may be selected from the group consisting of Al, Ag, Cu, Mo, Au, or an alloy thereof; preferably, the second electrode is Au.
  • the second electrode has a thickness of 50 to 500 nm; preferably, the second electrode has a thickness of 100 to 200 nm.
  • the thin film photovoltaic device includes: a first electrode 10, a mooring layer 20, an electron extraction layer 30, and a second electrode 40; the electron extraction layer
  • the material of 30 is a crosslinked nanoparticle film formed by crosslinking treatment of the nanoparticle film.
  • the first electrode may be selected from indium doped tin oxide ( ITO), one or more of fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), and aluminum-doped zinc oxide (AZO); preferably, the first electrode is ITO.
  • ITO indium doped tin oxide
  • FTO fluorine-doped tin oxide
  • ATO antimony-doped tin oxide
  • AZO aluminum-doped zinc oxide
  • the light absorbing layer may be a semiconductor homojunction and a heterojunction; the material of the light absorbing layer is a light absorbing material in a solar spectrum, and may include: a polymer photovoltaic material, an organic small molecule. Photovoltaic materials, halogen-containing perovskite photovoltaic materials, chalcopyrite structural materials (such as copper indium gallium selenide), II-VI compound materials (such as thin films and nanocrystals), single crystal, polycrystalline, amorphous silicon.
  • the light absorbing layer will comprise a specific material in a certain material category; if the light absorbing layer is a heterojunction, the light absorbing layer will comprise a total of the above categories or two material categories. Two specific materials.
  • the second electrode may be selected from the group consisting of Al, Ag, Cu, Mo, Au, or an alloy thereof; preferably, the second electrode is Au.
  • the second electrode has a thickness of 50 to 500 nm; preferably, the second electrode has a thickness of 100 to 200 nm.
  • the thin film photodetector includes, in order, an anode 4, an electron blocking layer 5, a light absorbing layer 6, a hole blocking layer 7, and a cathode 8;
  • the material of the hole blocking layer 7 is a crosslinked nano particle film obtained by crosslinking a nano particle film.
  • At least one of the anode and the cathode has a high transmittance for the detection band.
  • the anode may be selected from the group consisting of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), and aluminum doped zinc oxide (AZO).
  • ITO indium doped tin oxide
  • FTO fluorine doped tin oxide
  • ATO antimony doped tin oxide
  • AZO aluminum doped zinc oxide
  • the anode is ITO.
  • the material of the electron blocking layer may be selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), polyethylene.
  • Carbazole (PVK) poly(N,N' bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD), poly(9,9-dioctyl) ⁇ -co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4"-tris(carbazol-9-yl)triphenylamine (TCTA), 4, 4'-bis(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4, 4'-diamine (TPD), N,N'-diphenyl
  • the material of the light absorbing layer may be a binary III-V compound (such as GaN, GaAs or InGaAs), a multi-component III-V compound, a nanocrystal of a II-VI compound material, or an organic One or more of a semiconductor material, a halogen-containing perovskite material, a chalcopyrite structural material (such as copper indium gallium selenide), single crystal, polycrystalline, amorphous silicon.
  • the light absorbing layer (photoelectron generating layer) may be a semiconductor or a semiconductor heterojunction. Specifically, if the light absorbing layer is formed in the same manner, the material of the light absorbing layer is a specific material in one of the above material categories. If the light absorbing layer is a heterojunction, the material is a total of two specific materials in one of the above material categories or two material categories.
  • the cathode may be selected from the group consisting of Al, Ag, Cu, Mo, Au, or an alloy thereof; preferably, the cathode is Au.
  • the cathode has a thickness of 50 to 500 nm; preferably, the cathode has a thickness of 100 to 200 nm.
  • the thin film photodetector is partially packaged, fully packaged, or unpackaged.
  • the semiconductor layer material of the thin film transistor is a crosslinked nanoparticle film formed by cross-linking a nanoparticle film;
  • the thin film transistor includes a substrate 10 and is disposed on the substrate 10.
  • the source electrode 20 and the drain electrode 30 are separated by the semiconductor layer 60; specifically, the semiconductor layer may have a thickness greater than a thickness of the source electrode and the drain electrode (shown in FIG. 7a); the semiconductor layer is also It may be set to coincide with the thickness of the source and drain electrodes (shown in Figure 7b).
  • the thin film transistor may further be disposed as a substrate, a gate electrode, an insulating layer, and a semiconductor layer which are sequentially stacked from bottom to top, and the active layer and the drain electrode are disposed on the semiconductor layer.
  • the source electrode and the drain electrode are separated from each other.
  • the thin film transistor may further be disposed as a substrate, a gate electrode, an insulating layer, and a semiconductor layer which are sequentially stacked from bottom to top, and an active electrode and a drain electrode are further disposed on the insulating layer, Source and drain electrodes are located inside the semiconductor layer and separated by the semiconductor layer.
  • the material of the source electrode, the drain electrode, and the gate electrode may be a metal or a semiconductor having high conductivity; the material of the insulating layer may be a dielectric material such as an oxide or a nitride.
  • the present invention provides a crosslinked nanoparticle film, a preparation method thereof and a thin film optoelectronic device.
  • the invention adopts a combination gas when the nanoparticle is formed into a film, thereby promoting cross-linking between the particles, thereby increasing
  • the electrical coupling between the particles reduces the barrier of carrier transport and increases the carrier mobility, thereby greatly improving the electrical performance.
  • Applying the thus obtained crosslinked nanoparticle film to the electroluminescent device prepared by the solution method as an electron transport layer can improve carrier balance, improve luminous efficiency and device lifetime; and apply it to thin film photovoltaic prepared by solution method
  • the electron transport layer can significantly reduce the linear resistance of the device, improve the parallel resistance, and improve the energy conversion efficiency of the device.
  • Applying it to the thin film photodetector prepared by the solution method as an electron extraction layer and a hole blocking layer can reduce the current and improve the detection.
  • the rate is applied to the thin film transistor prepared by the solution method to improve the carrier mobility of the semiconductor layer, increase the source-drain current, and increase the response frequency.

Abstract

公开了一种交联纳米颗粒薄膜及其制备方法与薄膜光电子器件，其中，制备方法包括：将纳米颗粒分散在溶剂中，并混合均匀，得到纳米颗粒溶液；通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜，并通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。通过在纳米颗粒成膜时，通入组合气体，促使颗粒之间相互交联，由此增加颗粒之间的电学耦合，降低载流子传输的势垒，增加载流子迁移率，从而大幅度提升薄膜的电学性能。

Description

一种交联纳米颗粒薄膜及制备方法与薄膜光电子器件 技术领域
本发明涉及器件薄膜制备领域，尤其涉及一种交联纳米颗粒薄膜及制备方法与薄膜光电子器件。
背景技术
氧化物纳米颗粒(或球形氧化物纳米晶)具有良好的结晶程度，这保证了其与体材料(低维材料)相似的光学、电学性质；另一方面，由于纳米颗粒自组装成膜的效果很好，使低成本的涂布制备工艺可以被应用。溶液法制备的光电子器件的过程中，纳米颗粒是形成相应氧化物薄膜的重要解决方案之一。常见的例子包括氧化锌(ZnO x)纳米颗粒，氧化钛(TiO x)颗粒的薄膜在发光二极管、薄膜太阳能电池、薄膜晶体管中作为传输电子的半导体材料；氧化镍(NiO x)在同样器件中作为传输空穴的半导体材料。
尽管如此，纳米颗粒之间相互堆积形成的薄膜与体材料薄膜仍然存在区别，这主要体现在载流子的传输特性上。虽然纳米颗粒内部具有良好的结晶性，但这样的结构只局限在纳米级别的范围内，即便在密排的情况下，纳米颗粒之间往往是由绝缘的表面配体填充甚至没有任何物质填充。如此，纳米颗粒之间存在相当高的载流子传输势垒，载流子在纳米颗粒薄膜内部的传输只能遵循跳跃式传输的规律，这导致材料在薄膜尺度下表现出的载流子迁移率远小于相应的体材料薄膜。
因此，现有技术还有待于改进和发展。
发明内容
鉴于上述现有技术的不足，本发明的目的在于提供一种交联纳米颗粒薄膜及制备方法与薄膜光电子器件，旨在解决现有器件薄膜的载流子传输势垒较高，载流子迁移率较低的问题。
本发明的技术方案如下：
一种交联纳米颗粒薄膜的制备方法，其中，包括：
步骤A、将纳米颗粒分散在溶剂中，并混合均匀，得到纳米颗粒溶液；
步骤B、通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜，并通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
所述的交联纳米颗粒薄膜的制备方法，其中，所述组合气体包括还原性气体、氧气、水汽和二氧化碳。
所述的交联纳米颗粒薄膜的制备方法，其中，还原性气体偏压控制在1～100Pa之间，氧气偏压控制在0～2×10 4Pa之间，水汽偏压控制在0～2×10 3Pa之间，二氧化碳偏压控制在0～100Pa之间。
所述的交联纳米颗粒薄膜的制备方法，其中，所述步骤A中，所述纳米颗粒溶液的质量浓度为1～100mg/ml。
所述的交联纳米颗粒薄膜的制备方法，其中，所述纳米颗粒为氧化物纳米颗粒、硫化物纳米颗粒、硒化物纳米颗粒、氮化物纳米颗粒、氟化物纳米颗粒中的一种或多种。
所述的交联纳米颗粒薄膜的制备方法，其中，所述纳米颗粒的平均直径控制在5nm以内。
所述的交联纳米颗粒薄膜的制备方法，其中，所述溶剂为醇类溶剂。
所述的交联纳米颗粒薄膜的制备方法，其中，所述步骤B具体包括：
步骤B1、首先将纳米颗粒溶液置于密闭的环境中，通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜；
步骤B2、然后往密闭的环境中通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
所述的交联纳米颗粒薄膜的制备方法，其中，所述步骤B具体包括：
步骤B1’、首先将纳米颗粒溶液置于惰性气体环境中，通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜；
步骤B2’、然后将纳米颗粒薄膜置于密闭的环境中，往密闭的环境中通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
所述的交联纳米颗粒薄膜的制备方法，其中，所述还原性气体为一氧化碳、氢气和氨气中的一种。
所述的交联纳米颗粒薄膜的制备方法，其中，所述步骤B中，所述交联纳米颗粒薄膜的厚度为15～60nm。
一种交联纳米颗粒薄膜，其中，采用如上所述的交联纳米颗粒薄膜的制备方法制备而成。
一种薄膜光电子器件，其中，包括如上所述的交联纳米颗粒薄膜。
所述的薄膜光电子器件，其中，所述薄膜光电子器件为电致发光器件、薄膜光伏、薄膜光探测器、薄膜晶体管中的任意一种。
所述的薄膜光电子器件，其中，所述电致发光器件包括：第一电极、空穴注入层、空穴传输层、发光层、电子传输层和第二电极；所述电子传输层的材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜。
所述的薄膜光电子器件，其中，所述薄膜光伏器件包括：第一电极、系光层、电子抽取层和第二电极；所述电子抽取层的材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜。
所述的薄膜光电子器件，其中，所述薄膜光探测器包括：阳极、电子阻挡层、吸光层、空穴阻挡层和阴极；所述空穴阻挡层的材料为纳米颗粒薄膜经交联处理而成的交联纳米颗粒薄膜。
所述的薄膜光电子器件，其中，所述薄膜晶体管的半导体层材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜。有益效果：本发明在纳米颗粒成膜时使颗粒之间相互交联，以增加颗粒之间的电学耦合，降低载流子传输的势垒，增加载流子迁移率，从而大幅度提升电学性能，这样制备出的纳米颗粒薄膜可以显著提升薄膜光电子器件的性能。
附图说明
图1为现有未交联氧化锌纳米颗粒薄膜的结构示意图。
图2为本发明方法制备的交联氧化锌纳米颗粒薄膜的结构示意图。
图3为不同薄膜对ITO/NPB/MoO x/Al器件的电流-电压曲线示意图。
图4为本发明的薄膜光电子器件实施方式中一种电致发光器件较佳实施例的结构示意图。
图5为本发明的薄膜光电子器件实施方式中一种薄膜光伏器件较佳实施例的结构示意图。
图6为本发明的薄膜光电子器件实施方式中一种薄膜光探测器较佳实施例的结构示意图。
图7a为本发明的薄膜光电子器件实施方式中一种薄膜晶体管较佳实施例的第一结构示意图。
图7b为本发明的薄膜光电子器件实施方式中一种薄膜晶体管较佳实施例的第二结构示意图。
图8为本发明的薄膜光电子器件实施方式中一种薄膜晶体管较佳实施例的第三结构示意图。
图9为本发明的薄膜光电子器件实施方式中一种薄膜晶体管较佳实施例的第四结构示意图。
具体实施方式
本发明提供一种交联纳米颗粒薄膜及制备方法与薄膜光电子器件，为使本发明的目的、技术方案及效果更加清楚、明确，以下对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
本发明的一种交联纳米颗粒薄膜的制备方法较佳实施例，其中，包括：
步骤A、将纳米颗粒分散在溶剂中，并混合均匀，得到纳米颗粒溶液；
所述步骤A具体为，按质量浓度为1～100mg/ml的配比，将纳米颗粒分散在溶剂中，并混合至混合均匀，配制得到可供溶液法成膜使用的纳米颗粒溶液。其中，所述纳米颗粒可以为宽带隙的氧化物纳米颗粒、硫化物纳米颗粒、硒化物纳米颗粒、氮化物纳米颗粒、氟化物纳米颗粒中的一种或多种，所述氧化物纳米颗粒可以为但不限于ZnO x(如ZnO)、TiO x(如TiO 2)等中的一种；所述硫化物纳米颗粒可以为但不限于硫化锌、硫化钼中的一种；所述硒化物纳米颗粒可以为但不限于硒化锌、硒化铅中的一种；所述氮化物纳米颗粒可以为但不限于氮化硅、氮化铝中的一种；所述氟化物纳米颗粒可以为但不限于氟化镧、氟化钠中的一种。本发明控制纳米颗粒的尺寸，较佳地将球状纳米颗粒的平均直径控制在5nm以内，以保证有足量表面态金属原子可以参与反应。所述溶剂可以为醇类溶剂，如甲醇、乙醇等。
步骤B、通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜，并通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。本发明通过溶液法沉积薄膜，所述溶液法可以为旋涂、喷墨打印、喷涂、刮刀涂布等。
具体地，所述组合气体包括还原性气体、氧气、水汽和二氧化碳。较佳地，还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在0～2×10 4Pa之间，水汽偏压控制在0～2×10 3Pa之间、二氧化碳偏压控制在 0～100Pa之间。本发明控制与膜接触的组合气体，较佳地将与膜接触的组合气体控制在上述偏压范围内，这是因为在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
下面对上述各类型纳米颗粒发生交联反应的条件进行详细说明。
1、氧化物纳米颗粒
纳米颗粒为氧化锌纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在0～1×10 3Pa之间，水汽偏压控制在0～1×10 3Pa之间、二氧化碳偏压控制在0～100Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
纳米颗粒为氧化钛纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在0～1×10 4Pa之间，水汽偏压控制在0～2×10 3Pa之间、二氧化碳偏压控制在0～100Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
纳米颗粒为氧化镍纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在0～5×10 3Pa之间，水汽偏压控制在0～2×10 3Pa之间、二氧化碳偏压控制在0～100Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
2、硫化物纳米颗粒
纳米颗粒为硫化锌纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在小于0.1Pa，水汽偏压控制在0～2×10 3Pa之间、二氧化碳偏压控制在0～100Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
纳米颗粒为硫化钼纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在小于0.1Pa，水汽偏压控制在0～2×10 3Pa之间、二氧化碳偏压控制在0～100Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
3、硒化物纳米颗粒
纳米颗粒为硒化锌纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在小于0.1Pa，水汽偏压控制在 0～1×10 2Pa之间、二氧化碳偏压控制在0～10Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
纳米颗粒为硒化铅纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在小于0.1Pa，水汽偏压控制在小于0.1Pa、二氧化碳偏压控制在0～100Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
4、氮化物纳米颗粒
纳米颗粒为氮化硅纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在0.1～1Pa，水汽偏压控制在0～2×10 3Pa之间、二氧化碳偏压控制在0～100Pa之间。此外，氮气保持在1×10 5Pa左右。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
纳米颗粒为氮化铝纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在小于0.1Pa，水汽偏压控制在0～2×10 3Pa之间、二氧化碳偏压控制在10～100Pa之间。此外，氮气保持在1×10 5Pa左右。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
5、氟化物纳米颗粒
纳米颗粒为氟化镧纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在小于0.1Pa，水汽偏压控制在0～1×10 2Pa之间、二氧化碳偏压控制在0～10Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
纳米颗粒为氟化钠纳米颗粒时，将还原性气体(如一氧化碳、氢气或氨气等)偏压控制在1～100Pa之间，氧气偏压控制在小于0.1Pa，水汽偏压控制在0～2×10 3Pa之间、二氧化碳偏压控制在10～100Pa之间。在该偏压范围内制成的薄膜致密度会较高，薄膜中载流子电子迁移率也会较高。
本发明使纳米颗粒在成膜时相互交联，交联是指纳米颗粒之间有物质填充并通过化学键使纳米颗粒连接。相对应地，未交联的纳米颗粒之间没有通过化学键作用连接的物质。本发明通过上述交联方法，可提高相应薄膜的致密度和载流子迁移率。
本发明可在非真空条件下将纳米颗粒溶液直接制成纳米颗粒薄膜，具体地，所述步骤B具体包括：
步骤B1、首先将纳米颗粒溶液置于密闭的环境中，通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜；
步骤B2、然后往密闭的环境中通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
上述步骤即为，在密闭的非真空条件下将纳米颗粒溶液制成纳米颗粒薄膜，然后往该密闭的环境中通入上述组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
本发明不限于上述气体环境下制成交联纳米颗粒薄膜，还可先在惰性气体条件下制成纳米颗粒薄膜后，将得到的纳米颗粒薄膜置于密闭的环境中，然后通入组合气体促使交联反应发生，得到交联纳米颗粒薄膜。具体地，所述步骤B具体包括：
步骤B1’、首先将纳米颗粒溶液置于惰性气体环境中，通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜；
步骤B2’、然后将纳米颗粒薄膜置于密闭的环境中，往密闭的环境中通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
本发明上述交联反应结束后，还对交联纳米颗粒薄膜进行干燥处理，最终得到厚度为15～60nm的交联纳米颗粒薄膜。其中干燥温度高于纳米颗粒溶液中溶剂的沸点；根据膜厚，干燥时间大于15分钟之每50纳米。
本发明还提供一种交联纳米颗粒薄膜，其中，采用如上任一项所述的交联纳米颗粒薄膜的制备方法制备而成。
通常的纳米颗粒薄膜由相互不交联的纳米颗粒自组装而成，本发明采用在纳米颗粒成膜时，通入组合气体，促使颗粒之间相互交联，由此增加颗粒之间的电学耦合，降低载流子传输的势垒，增加载流子迁移率，从而大幅度提升电学性能。将如此获得的交联纳米颗粒薄膜应用在诸如溶液法制备的发光二极管、薄膜太阳能电池、光探测器、薄膜晶体管中，可显著提升上述器件的性能。
下面以氧化锌纳米颗粒为例，对现有未交联氧化锌纳米颗粒薄膜和通过本发明方法制备的交联氧化锌纳米颗粒薄膜的性能进行测试。结合图1-3，图1为现 有未交联氧化锌纳米颗粒薄膜的结构示意图，图2为本发明方法制备的交联氧化锌纳米颗粒薄膜的结构示意图，图3为不同薄膜对ITO/NPB/MoO x/Al器件的电流-电压曲线示意图。从图1可以看出，未交联的纳米颗粒1之间没有通过化学键作用连接的物质；从图2可以看出，纳米颗粒2之间有物质3填充并通过化学键使纳米颗粒2连接。由于加入的氧化锌对ITO/NPB/MoO x/Al这个结构的电流有非常有效的抑制作用，可以通过观察电流是否增加的方式判断ZnO纳米颗粒薄膜有没有在浸泡过程中脱离。从图3可以看出，交联ZnO纳米颗粒薄膜不论是否经过醇类溶剂(如乙醇)浸泡，电流都保持在较低数值，这说明交联ZnO纳米颗粒薄膜没有在浸泡过程中脱离，使得ZnO对ITO/NPB/MoO x/Al这个结构的电流起到了明显的抑制作用；而未交联的ZnO纳米颗粒薄膜经过醇类溶剂(如乙醇)浸泡后，电流显著升高，这说明未交联的ZnO纳米颗粒薄膜在浸泡过程中脱落了，使响应器件的电流显著升高，并非常接近不添加ZnO纳米颗粒薄膜的器件。因此，氧化锌纳米颗粒交联后得到的交联氧化锌纳米颗粒薄膜在原溶剂(指分散氧化锌纳米颗粒时采用的溶剂，通常是醇类溶剂)中浸泡后没有明显溶解或物质脱离；相反，未经交联的纳米颗粒薄膜经过浸泡后很容易脱落。
本发明还提供一种薄膜光电子器件，其中，包括如上所述的交联纳米颗粒薄膜。具体地，所述薄膜光电子器件为电致发光器件、薄膜光伏、薄膜光探测器、薄膜晶体管中的任意一种。
作为薄膜光电子器件中一具体的实施方式，如图4所示，所述电致发光器件依次包括：第一电极10、空穴注入层20、空穴传输层30、发光层40、电子传输层50和第二电极60；所述电子传输层50的材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜。
本实施方式所述电致发光器件中，所述第一电极和第二电极中至少有一个电极对发光层所发射的光波段有高透光率，具体地，所述第一电极可选自铟掺杂氧化锡(ITO)、氟掺杂氧化锡(FTO)、锑掺杂氧化锡(ATO)、铝掺杂氧化锌(AZO)中的一种或多种；优选地，所述第一电极为ITO。
进一步，在本实施方式中，所述空穴传输层的材料可选自聚[双(4-苯基)(4-丁基苯基)胺]、4-丁基-N,N-二苯基苯胺均聚物、苯胺、4-丁基-N,N-二苯基、均聚合物(Poly-TPD)、聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)(TFB)、聚(9- 乙烯咔唑)(PVK)、TPD、Spiro-TPD、LG101、HAT-CN、PEDOT:PSS、TAPC、a-NPB、m-MTDATA、NixO、MoOx、VOx、WOx或它们的混合物；优选地，所述空穴传输层为poly-TPD。所述空穴传输层的厚度为10～100nm。
进一步，在本实施方式中，所述量子点发光层的材料包括但不限于，II-VI半导体的纳米晶，比如CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、PbS、PbSe、PbTe和其他二元、三元、四元的II-VI化合物；III-V族半导体的纳米晶，比如GaP、GaAs、InP、InAs和其他二元、三元、四元的III-V化合物；所述的用于电致发光的量子点发光材料材料还不限于II-V族化合物、III-VI化合物、IV-VI族化合物、I-III-VI族化合物、II-IV-VI族化合物、IV族单质。
进一步，在本实施方式中，所述第二电极可选自Al、Ag、Cu、Mo、Au或它们的合金；优选地，所述第二电极为Au。所述第二电极的厚度为50～500nm；优选地，所述第二电极的厚度为100～200nm。
作为薄膜光电子器件中一具体的实施方式，如图5所示，所述薄膜光伏器件依次包括：第一电极10、系光层20、电子抽取层30和第二电极40；所述电子抽取层30的材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜。
本实施方式所述薄膜光伏器件中，所述第一电极和第二电极中至少有一个电极对太阳光具有高透光率，具体地，所述第一电极可选自铟掺杂氧化锡(ITO)、氟掺杂氧化锡(FTO)、锑掺杂氧化锡(ATO)、铝掺杂氧化锌(AZO)中的一种或多种；优选地，所述第一电极为ITO。
进一步，在本实施方式中，所述吸光层可以为一个半导体同制节、异质结；所述吸光层的材料为太阳光谱范围内的吸光材料，可以包括：聚合物光伏材料、有机小分子光伏材料、含卤素钙钛矿光伏材料、黄铜矿结构材料(例如铜铟镓硒)、II-VI化合物材料(例如薄膜和纳米晶体)、单晶、多晶、无定型硅。若所述吸光层为同制结，吸光层将包含上述某一材料类别中的具体材料；若所述吸光层为异质结，则吸光层将包含上述某一类别或两种材料类别中总共两种具体材料。
进一步，在本实施方式中，所述第二电极可选自Al、Ag、Cu、Mo、Au或它们的合金；优选地，所述第二电极为Au。所述第二电极的厚度为50～500nm；优选地，所述第二电极的厚度为100～200nm。
作为薄膜光电子器件中一具体的实施方式，如图6所示，所述薄膜光探测器 依次包括：阳极4、电子阻挡层5、吸光层6、空穴阻挡层7和阴极8；所述空穴阻挡层7的材料为纳米颗粒薄膜经交联处理而成的交联纳米颗粒薄膜。
本实施方式所述薄膜光电探测器中，所述阳极和阴极中至少有一个电极对探测波段有高透过率。
进一步，在本实施方式中，所述阳极可选自铟掺杂氧化锡(ITO)、氟掺杂氧化锡(FTO)、锑掺杂氧化锡(ATO)、铝掺杂氧化锌(AZO)中的一种或多种；优选地，所述阳极为ITO。
进一步，在本实施方式中，所述电子阻挡层的材料可选自聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)(TFB)、聚乙烯咔唑(PVK)、聚(N,N'双(4-丁基苯基)-N,N'-双(苯基)联苯胺)(poly-TPD)、聚(9,9-二辛基芴-共-双-N,N-苯基-1,4-苯二胺)(PFB)、4,4’,4”-三(咔唑-9-基)三苯胺(TCTA)、4,4'-二(9-咔唑)联苯(CBP)、N,N’-二苯基-N,N’-二(3-甲基苯基)-1,1’-联苯-4,4’-二胺(TPD)、N,N’-二苯基-N,N’-(1-萘基)-1,1’-联苯-4,4’-二胺(NPB)、掺杂石墨烯、非掺杂石墨烯、C60、或它们的混合物；优选地，所述电子阻挡层为poly-TPD。所述电子阻挡层的厚度为10～100nm。
进一步，在本实施方式中，所述吸光层的材料可以为二元III-V族化合物(如GaN、GaAs或InGaAs)、多元的III-V族化合物、II-VI化合物材料的纳米晶、有机半导体材料、含卤素钙钛矿材料、黄铜矿结构材料(如铜铟镓硒)、单晶、多晶、无定型硅中的一种或多种。所述吸光层(光电子产生层)可以为一个半导体同制结，也可以为一个半导体异制结。具体地，若吸光层为同制结，吸光层的材料为上述某一材料类别中的一种具体材料。若吸光层为异制结，其材料为上述某一材料类别或者两种材料类别中总共两种具体材料。
进一步，在本实施方式中，所述阴极可选自Al、Ag、Cu、Mo、Au或它们的合金；优选地，所述阴极为Au。所述阴极的厚度为50～500nm；优选地，所述阴极的厚度为100～200nm。优选地，所述薄膜光探测器为部分封装、全封装、或不封装。
作为薄膜光电子器件中一具体的实施方式，所述薄膜晶体管的半导体层材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜；所述薄膜晶体管包括衬底10、位于衬底10上的源电极20和漏电极30、位于所述源电极20和漏电极30 上的绝缘层40、位于所述绝缘层40上的柵电极50，所述衬底10上还设置有半导体层60，所述源电极20和漏电极30之间被所述半导体层60隔开；具体地，所述半导体层厚度可大于所述源电极和漏电极的厚度(图7a所示)；所述半导体层也可以设置为与所述源电极和漏电极的厚度一致(图7b所示)。
更进一步，如图8所示，所述薄膜晶体管还可设置为：从下至上依次叠加的衬底、柵电极、绝缘层以及半导体层，所述半导体层上设置有源电极和漏电极，所述源电极和漏电极彼此分开。
或者如图9所示，所述薄膜晶体管还可设置为：从下至上依次叠加的衬底、柵电极、绝缘层以及半导体层，所述绝缘层上还设置有源电极和漏电极，所述源电极和漏电极位于所述半导体层内部并被所述半导体层分开。
本实施方式所述薄膜晶体管中，所述源电极、漏电极和柵电极的材料可以为金属或具有高导电率的半导体；所述绝缘层的材料可以为电介质材料，例如氧化物或氮化物。
综上所述，本发明提供的一种交联纳米颗粒薄膜及制备方法与薄膜光电子器件，本发明采用在纳米颗粒成膜时，通入组合气体，促使颗粒之间相互交联，由此增加颗粒之间的电学耦合，降低载流子传输的势垒，增加载流子迁移率，从而大幅度提升电学性能。将如此获得的交联纳米颗粒薄膜应用在溶液法制备的电致发光器件中作为电子传输层可以改善载流子平衡，提高发光效率和器件寿命；将其应用在溶液法制备的薄膜光伏中作为电子传输层可以显著降低器件的线性电阻、提高并联电阻，提高器件的能量转换效率；将其应用在溶液法制备的薄膜光探测器中作为电子抽取层和空穴阻挡层可以降低电流，提高探测率；将其应用在溶液法制备的薄膜晶体管中可以提高半导体层的载流子迁移率，增加源极-漏极电流，提高响应频率。
应当理解的是，本发明的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (18)

  1. 一种交联纳米颗粒薄膜的制备方法，其特征在于，包括：
    步骤A、将纳米颗粒分散在溶剂中，并混合均匀，得到纳米颗粒溶液；
    步骤B、通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜，并通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
  2. 根据权利要求1所述的交联纳米颗粒薄膜的制备方法，其特征在于，
    所述组合气体包括还原性气体、氧气、水汽和二氧化碳。
  3. 根据权利要求2所述的交联纳米颗粒薄膜的制备方法，其特征在于，还原性气体偏压控制在1～100Pa之间，氧气偏压控制在0～2×10 4Pa之间，水汽偏压控制在0～2×10 3Pa之间，二氧化碳偏压控制在0～100Pa之间。
  4. 根据权利要求1所述的交联纳米颗粒薄膜的制备方法，其特征在于，所述步骤A中，所述纳米颗粒溶液的质量浓度为1～100mg/ml。
  5. 根据权利要求1所述的交联纳米颗粒薄膜的制备方法，其特征在于，所述纳米颗粒为氧化物纳米颗粒、硫化物纳米颗粒、硒化物纳米颗粒、氮化物纳米颗粒、氟化物纳米颗粒中的一种或多种。
  6. 根据权利要求1所述的交联纳米颗粒薄膜的制备方法，其特征在于，所述纳米颗粒的平均直径控制在5nm以内。
  7. 根据权利要求1所述的交联纳米颗粒薄膜的制备方法，其特征在于，所述溶剂为醇类溶剂。
  8. 根据权利要求1所述的交联纳米颗粒薄膜的制备方法，其特征在于，所述步骤B具体包括：
    步骤B1、首先将纳米颗粒溶液置于密闭的环境中，通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜；
    步骤B2、然后往密闭的环境中通入组合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
  9. 根据权利要求1所述的交联纳米颗粒薄膜的制备方法，其特征在于，所述步骤B具体包括：
    步骤B1’、首先将纳米颗粒溶液置于惰性气体环境中，通过溶液法将纳米颗粒溶液制成纳米颗粒薄膜；
    步骤B2’、然后将纳米颗粒薄膜置于密闭的环境中，往密闭的环境中通入组 合气体，促使交联反应发生，得到交联纳米颗粒薄膜。
  10. 根据权利要求2所述的交联纳米颗粒薄膜的制备方法，其特征在于，所述还原性气体为一氧化碳、氢气和氨气中的一种。
  11. 根据权利要求1所述的交联纳米颗粒薄膜的制备方法，其特征在于，所述步骤B中，所述交联纳米颗粒薄膜的厚度为15～60nm。
  12. 一种交联纳米颗粒薄膜，其特征在于，采用如权利要求1～11任一项所述的交联纳米颗粒薄膜的制备方法制备而成。
  13. 一种薄膜光电子器件，其特征在于，包括如权利要求12所述的交联纳米颗粒薄膜。
  14. 根据权利要求13所述的薄膜光电子器件，其特征在于，所述薄膜光电子器件为电致发光器件、薄膜光伏、薄膜光探测器、薄膜晶体管中的任意一种。
  15. 根据权利要求14所述的薄膜光电子器件，其特征在于，所述电致发光器件包括：第一电极、空穴注入层、空穴传输层、发光层、电子传输层和第二电极；所述电子传输层的材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜。
  16. 根据权利要求14所述的薄膜光电子器件，其特征在于，所述薄膜光伏器件包括：第一电极、系光层、电子抽取层和第二电极；所述电子抽取层的材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜。
  17. 根据权利要求14所述的薄膜光电子器件，其特征在于，所述薄膜光探测器包括：阳极、电子阻挡层、吸光层、空穴阻挡层和阴极；所述空穴阻挡层的材料为纳米颗粒薄膜经交联处理而成的交联纳米颗粒薄膜。
  18. 根据权利要求14所述的薄膜光电子器件，其特征在于，所述薄膜晶体管的半导体层材料为纳米颗粒薄膜经交联处理形成的交联纳米颗粒薄膜。
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