JP2020516045A - 架橋ナノ粒子薄膜及び製造方法、並びに薄膜光電子デバイス - Google Patents
架橋ナノ粒子薄膜及び製造方法、並びに薄膜光電子デバイス Download PDFInfo
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- JP2020516045A JP2020516045A JP2020502747A JP2020502747A JP2020516045A JP 2020516045 A JP2020516045 A JP 2020516045A JP 2020502747 A JP2020502747 A JP 2020502747A JP 2020502747 A JP2020502747 A JP 2020502747A JP 2020516045 A JP2020516045 A JP 2020516045A
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- -1 manufacturing method Substances 0.000 title description 5
- 238000004132 cross linking Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 26
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- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
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- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 2
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- QZTQQBIGSZWRGI-UHFFFAOYSA-N 2-n',7-n'-bis(3-methylphenyl)-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=C3C4(C5=CC=CC=C5C5=CC=CC=C54)C4=CC(=CC=C4C3=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 QZTQQBIGSZWRGI-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
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- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
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- 229910002665 PbTe Inorganic materials 0.000 description 1
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- 150000001412 amines Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
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- 238000004090 dissolution Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- ZTLUNQYQSIQSFK-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]naphthalen-1-amine Chemical compound C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC2=CC=CC=C12 ZTLUNQYQSIQSFK-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- ATGUVEKSASEFFO-UHFFFAOYSA-N p-aminodiphenylamine Chemical compound C1=CC(N)=CC=C1NC1=CC=CC=C1 ATGUVEKSASEFFO-UHFFFAOYSA-N 0.000 description 1
- 238000013087 polymer photovoltaic Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
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Abstract
Description
ナノ粒子を溶媒中に分散し、均一に混合してナノ粒子溶液を得るステップAと、
溶液法によりナノ粒子溶液をナノ粒子薄膜に製造し、複合ガスを流して架橋反応を発生させ、架橋ナノ粒子薄膜を得るステップBと、を含む架橋ナノ粒子薄膜の製造方法を提供する。
まずナノ粒子溶液を密閉した環境に置き、溶液法によりナノ粒子溶液をナノ粒子薄膜に製造するステップB1と、
次に密閉した環境に複合ガスを流して架橋反応を発生させ、架橋ナノ粒子薄膜を得るステップB2と、を含む。
まずナノ粒子溶液を不活性ガスの環境に置き、溶液法によりナノ粒子溶液をナノ粒子薄膜に製造するステップB1’と、
次にナノ粒子薄膜を密閉した環境に置き、密閉した環境に複合ガスを流して架橋反応を発生させ、架橋ナノ粒子薄膜を得るステップB2’と、を含む。
1.酸化物ナノ粒子
2.硫化物ナノ粒子
3.セレン化物ナノ粒子
4.窒化物ナノ粒子
5.フッ化物ナノ粒子
まずナノ粒子溶液を密閉した環境に置き、溶液法によりナノ粒子溶液をナノ粒子薄膜に製造するステップB1と、
次に密閉した環境に複合ガスを流して架橋反応を発生させ、架橋ナノ粒子薄膜を得るステップB2と、を含む。
まずナノ粒子溶液を不活性ガスの環境に置き、溶液法によりナノ粒子溶液をナノ粒子薄膜に製造するステップB1’と、
次にナノ粒子薄膜を密閉した環境に置き、密閉した環境に複合ガスを流して架橋反応を発生させ、架橋ナノ粒子薄膜を得るステップB2’と、を含む。
Claims (18)
- ナノ粒子を溶媒中に分散し、均一に混合してナノ粒子溶液を得るステップAと、
溶液法によりナノ粒子溶液をナノ粒子薄膜に製造し、複合ガスを流して架橋反応を発生させ、架橋ナノ粒子薄膜を得るステップBと、を含むことを特徴とする架橋ナノ粒子薄膜の製造方法。 - 前記複合ガスは、還元性ガス、酸素ガス、水蒸気、及び二酸化炭素を含むことを特徴とする請求項1に記載の架橋ナノ粒子薄膜の製造方法。
- 還元性ガスのバイアスは1〜100Pa間に制御され、酸素ガスのバイアスは0〜2×104Pa間に制御され、水蒸気のバイアスは0〜2×103Pa間に制御され、二酸化炭素のバイアスは0〜100Pa間に制御されることを特徴とする請求項2に記載の架橋ナノ粒子薄膜の製造方法。
- 前記ステップAでは、前記ナノ粒子溶液の質量濃度は1〜100mg/mlであることを特徴とする請求項1に記載の架橋ナノ粒子薄膜の製造方法。
- 前記ナノ粒子は、酸化物ナノ粒子、硫化物ナノ粒子、セレン化物ナノ粒子、及び窒化物ナノ粒子、フッ化物ナノ粒子のうちの1種又は複数種を含むことを特徴とする請求項1に記載の架橋ナノ粒子薄膜の製造方法。
- 前記ナノ粒子の平均径は5nm以内に制御されていることを特徴とする請求項1に記載の架橋ナノ粒子薄膜の製造方法。
- 前記溶媒はアルコール系溶媒であることを特徴とする請求項1に記載の架橋ナノ粒子薄膜の製造方法。
- 前記ステップBは、具体的に、
まずナノ粒子溶液を密閉した環境に置き、溶液法によりナノ粒子溶液をナノ粒子薄膜に製造するステップB1と、
次に密閉した環境に複合ガスを流して架橋反応を発生させ、架橋ナノ粒子薄膜を得るステップB2と、を含むことを特徴とする請求項1に記載の架橋ナノ粒子薄膜の製造方法。 - 前記ステップBは、具体的に、
まずナノ粒子溶液を不活性ガスの環境に置き、溶液法によりナノ粒子溶液をナノ粒子薄膜に製造するステップB1’と、
次にナノ粒子薄膜を密閉した環境に置き、密閉した環境に複合ガスを流して架橋反応を発生させ、架橋ナノ粒子薄膜を得るステップB2’と、を含むことを特徴とする請求項1に記載の架橋ナノ粒子薄膜の製造方法。 - 前記還元性ガスは、一酸化炭素、水素ガス、及びアンモニアガスのうちの1種であることを特徴とする請求項2に記載の架橋ナノ粒子薄膜の製造方法。
- 前記ステップBでは、前記架橋ナノ粒子薄膜の厚さは15〜60nmであることを特徴とする請求項1に記載の架橋ナノ粒子薄膜の製造方法。
- 請求項1乃至11のいずれか一項に記載の架橋ナノ粒子薄膜の製造方法により製造されたことを特徴とする架橋ナノ粒子薄膜。
- 請求項12に記載の架橋ナノ粒子薄膜を備えることを特徴とする薄膜光電子デバイス。
- 前記薄膜光電子デバイスは、エレクトロルミネセンスデバイス、薄膜太陽光発電、薄膜光検出器、及び薄膜トランジスタのうちのいずれか1種であることを特徴とする請求項13に記載の薄膜光電子デバイス。
- 前記エレクトロルミネセンスデバイスは、第1電極、正孔注入層、正孔輸送層、発光層、電子輸送層、及び第2電極を備え、前記電子輸送層の材料は、ナノ粒子薄膜を架橋処理することで形成された架橋ナノ粒子薄膜であることを特徴とする請求項14に記載の薄膜光電子デバイス。
- 前記薄膜太陽光発電デバイスは、第1電極、吸光層、電子抽出層、及び第2電極を備え、前記電子抽出層の材料は、ナノ粒子薄膜を架橋処理することで形成された架橋ナノ粒子薄膜であることを特徴とする請求項14に記載の薄膜光電子デバイス。
- 前記薄膜光検出器は、陽極、電子障壁層、吸光層、正孔障壁層、及び陰極を備え、前記正孔障壁層の材料は、ナノ粒子薄膜を架橋処理することでなる架橋ナノ粒子薄膜であることを特徴とする請求項14に記載の薄膜光電子デバイス。
- 前記薄膜トランジスタの半導体層の材料は、ナノ粒子薄膜を架橋処理することで形成された架橋ナノ粒子薄膜であることを特徴とする請求項14に記載の薄膜光電子デバイス。
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