WO2018047770A1 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
WO2018047770A1
WO2018047770A1 PCT/JP2017/031795 JP2017031795W WO2018047770A1 WO 2018047770 A1 WO2018047770 A1 WO 2018047770A1 JP 2017031795 W JP2017031795 W JP 2017031795W WO 2018047770 A1 WO2018047770 A1 WO 2018047770A1
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WO
WIPO (PCT)
Prior art keywords
resin composition
semiconductor device
photosensitive resin
manufacturing
film
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PCT/JP2017/031795
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English (en)
French (fr)
Japanese (ja)
Inventor
裕馬 田中
岡明　周作
友規 釼持
Original Assignee
住友ベークライト株式会社
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Application filed by 住友ベークライト株式会社 filed Critical 住友ベークライト株式会社
Priority to JP2017563145A priority Critical patent/JP6477925B2/ja
Priority to CN201780054916.7A priority patent/CN109690759B/zh
Priority to KR1020197009608A priority patent/KR102028870B1/ko
Publication of WO2018047770A1 publication Critical patent/WO2018047770A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device.
  • the present inventors examined the reliability of the fan-out type WLP obtained by the conventional manufacturing process described in Patent Document 1 and the like. As a result, coating unevenness of the resin composition such as repelling occurs inside the insulating resin film formed on the sealing material for sealing the semiconductor chip is caused, and as a result, the insulating resin film It was found that the reliability of the decline. Note that in this specification, the repellency of the insulating resin film means that the insulating resin film has uneven thickness and the base of the insulating resin film is exposed.
  • the present invention provides a technique for manufacturing a fan-out type semiconductor device having an insulating resin film excellent in reliability with high yield.
  • a step of preparing a structure in which a plurality of semiconductor chips having connection terminals on the surface are embedded in a sealing material Forming a first insulative resin film in a region on the surface on the side where the connection terminals provided on the semiconductor chip in the structure are disposed; Forming a first opening in the first insulating resin film and the structure to expose a part of the connection terminal; Forming a conductive film so as to cover the exposed connection terminal and at least a part of the first insulating resin film; Forming a second insulating resin film on the surface of the conductive film; Forming a second opening exposing a portion of the conductive film outside a region formed on the semiconductor chip in the second insulating resin film; Including
  • the resin material constituting the first insulating resin film is a photosensitive resin composition containing an alkali-soluble resin,
  • (First embodiment) 1 to 3 are views for explaining an example of a method for manufacturing the semiconductor device 100 according to the present embodiment.
  • the manufacturing method of the semiconductor device 100 according to the present embodiment includes a plurality of semiconductor chips 40 having connection terminals 30 on the surface. And a step of forming a first insulating resin film 60 in a region on the surface of the structure on the side where the connection terminals 30 of the semiconductor chip 40 are embedded. Forming a first opening 250 exposing a part of the connection terminal 30 in the first insulating resin film 60 and the structure; the exposed connection terminal 30; and the first insulating resin film.
  • the second opening 300 is formed outside the region formed on the semiconductor chip 40 in the second insulating resin film 70. It is characterized by forming.
  • a resin material constituting the first insulating resin film 60 a photosensitive resin composition containing an alkali-soluble resin, and about droplets made of such a photosensitive resin composition. It is particularly important to use a droplet whose surface tension measured by the hanging drop method is 20 mN / m or more and 45 mN / m or less.
  • the manufacturing method according to the present embodiment is a method characterized in that the semiconductor chip 40 is sealed from the surface of the semiconductor chip 40 opposite to the side on which the electrode pads 30 are disposed.
  • a plurality of semiconductor chips 40 obtained by separating a semiconductor wafer that has been passivated in advance by forming a passivation film 50 are separated at predetermined intervals.
  • a structure in which the terminal surface of the semiconductor chip 40 (the surface on which the electrode pad 30 is disposed) is attached to the adhesive surface of the adhesive member 200 is prepared.
  • a method for manufacturing such a structure a method of dividing the semiconductor wafer into a state in which the semiconductor wafer is attached to the adhesive surface of the adhesive member 200 may be used.
  • a method of die-bonding the semiconductor chip 40 to the adhesive surface of the adhesive member 200 may be used.
  • the photosensitive resin composition used in order to form the 1st insulating resin film 60 mentioned later can be used as a material which forms the said passivation film 50.
  • the plurality of semiconductor chips 40 are embedded in the sealing material 10 so that the electrode pads 30 provided on the respective surfaces all face the same direction. It is preferable.
  • a pillar-shaped conductor portion made of a metal such as copper may be formed on the electrode pad 30 provided in the semiconductor chip 40 described above.
  • solder bumps may be formed on the end surface of the conductor portion opposite to the side where the electrode pads are disposed.
  • the plurality of semiconductor chips 40 attached to the adhesive member 200 are covered and sealed with a cured product of the semiconductor sealing resin composition.
  • cured material of the resin composition for semiconductor sealing shows a sealing material.
  • known materials can be used, and examples thereof include an epoxy resin composition containing an epoxy resin, an inorganic filler, and a curing agent.
  • examples of the method for sealing the semiconductor chip 40 using the semiconductor sealing resin composition include a transfer molding method, a compression molding method, an injection molding method, and a lamination method.
  • a transfer molding method, a compression molding method, or a lamination method is preferable from the viewpoint of forming the sealing material 10 without leaving an unfilled portion. Therefore, it is preferable that the resin composition for semiconductor sealing used for this manufacturing method is a granular form, a granular form, a tablet form, or a sheet form.
  • the compression molding method is particularly preferable from the viewpoint of suppressing the occurrence of displacement of the semiconductor chip 40 during the molding of the sealing material 10.
  • the adhesive member 200 is peeled off. By doing so, it is possible to obtain a structure in which a plurality of semiconductor chips 40 having electrode pads 30 on the surface are embedded in the sealing material 10.
  • the adhesive member 200 is preferably peeled off from the structure after reducing the adhesion between the adhesive member 200 and the structure.
  • the adhesion layer between the adhesive member 200 and the structure is adhered by, for example, performing ultraviolet irradiation or heat treatment to deteriorate the adhesion layer of the adhesion member 200 forming the adhesion site. A method of reducing the property.
  • the adhesive member 200 is not particularly limited as long as it adheres to the semiconductor chip 40, and examples thereof include a member in which a back grind tape and an adhesive layer are laminated.
  • the structure shown in FIG. 1C relates to an aspect in which the surface of the semiconductor chip 40 opposite to the side on which the electrode pads 30 are disposed is covered with the sealing material 10.
  • the sealing material 10 is a known method so that the surface of the semiconductor chip 40 opposite to the side on which the electrode pad 30 is disposed is exposed. The step of polishing and removing may be included.
  • a first insulating resin film 60 is formed on the surface of the obtained structure on the side where the electrode pad 30 is embedded.
  • the first insulating resin film 60 is formed by applying and drying a varnish-like resin composition on the surface of the structure body on which the electrode pad 30 is embedded. To do.
  • the film thickness of the first insulating resin film 60 can be, for example, 5 ⁇ m or more and 300 ⁇ m or less.
  • a known method such as a spin coating method, a slit coating method, an ink jet method, or the like can be employed. Among these, a spin coating method is preferably employed.
  • the photosensitive resin composition containing alkali-soluble resin as a resin material which comprises the 1st insulating resin film 60 Comprising: It consists of this photosensitive resin composition. It is important to use a droplet whose surface tension measured by the hanging drop method is 20 mN / m or more and 45 mN / m or less. Thus, the first insulating resin film 60 having excellent shape reliability can be formed on the sealing material 10 with a high yield. Moreover, the detail of the photosensitive resin composition used for this manufacturing method is mentioned later.
  • the present manufacturing method it is preferable to perform plasma treatment on the surface of the sealing material 10 on the side where the first insulating resin film 60 is formed before the first insulating resin film 60 is formed. .
  • the wettability of the first insulating resin film 60 can be improved.
  • the adhesion between the sealing material 10 and the first insulating resin film 60 is further improved.
  • argon gas, oxidizing gas, or fluorine-based gas can be used as a processing gas.
  • the oxidizing gas include O 2 gas, O 3 gas, CO gas, CO 2 gas, NO gas, and NO 2 gas.
  • an oxidizing gas is preferably used as the processing gas.
  • the oxidizing gas for example, O 2 gas is preferably used.
  • O 2 gas is preferably used as the oxidizing gas.
  • a specific functional group can be formed on the surface of the sealing material 10. Therefore, the adhesion and applicability of the first insulating resin film 60 to the sealing material 10 can be further improved, and the reliability of the semiconductor device can be further improved.
  • the conditions for the plasma treatment in this production method are not particularly limited, but in addition to the ashing treatment, a treatment for contacting with plasma derived from an inert gas may be used.
  • the plasma processing which concerns on this manufacturing method is the plasma processing performed without applying a bias voltage to a process target, or the plasma processing performed using non-reactive gas.
  • it may replace with the plasma processing mentioned above, may implement a chemical
  • medical solution process alkaline permanganate aqueous solution, such as potassium permanganate and sodium permanganate, is mentioned, for example.
  • a first opening 250 that exposes a part of the electrode pad 30 is formed in the first insulating resin film 60.
  • a method of forming the first opening 250 an exposure development method or a laser processing method can be used.
  • the desmear process which removes the smear produced when forming this 1st opening part 250 about the formed 1st opening part 250.
  • FIG. This desmear processing method can be performed by the following method, for example. First, the structure having the first insulating resin film 60 in which the first opening 250 is formed is immersed in a swelling liquid containing an organic solvent, and then immersed in an alkaline permanganate aqueous solution.
  • the permanganate examples include potassium permanganate and sodium permanganate.
  • the temperature of the potassium permanganate aqueous solution to be immersed is preferably 45 ° C. or higher, and preferably 95 ° C. or lower.
  • the immersion time in the aqueous potassium permanganate solution is preferably 2 minutes or more, and preferably 20 minutes or less. By doing so, the adhesion between the first insulating resin film 60 and the sealing material 10 can be improved more reliably.
  • argon gas, O 2 gas, O 3 gas, CO gas, CO 2 gas, NO gas, NO 2 gas, or fluorine-based gas can be used as the processing gas.
  • a conductive film 110 is formed so as to cover the exposed electrode pad 30 and the first insulating resin film 60.
  • the conductive film 110 is, for example, a solder plating film, a tin plating film, a two-layer plating film in which a gold plating film is laminated on a nickel plating film, or an under bump metal (UBM) film formed by electroless plating. It can be.
  • the film thickness of the electrically conductive film 110 can be 2 micrometers or more and 10 micrometers or less, for example. And about the obtained electrically conductive film 110, you may plasma-process with the method similar to the method mentioned above from the viewpoint of improving the durability of the semiconductor device 100 finally obtained.
  • the conductive film 110 can be formed as follows. Note that although an example in which the conductive film 110 including two layers of nickel and gold is formed is described here, the present invention is not limited to this.
  • a nickel plating film is formed.
  • the structure shown in FIG. 2B is immersed in a plating solution.
  • the conductive film 110 can be formed on the electrode pad 30 and the surface of the first insulating resin film 60.
  • the plating solution nickel lead and a reducing agent containing, for example, hypophosphite can be used.
  • electroless gold plating is performed on the nickel plating film.
  • the method of electroless gold plating is not particularly limited, for example, it can be performed by substitution gold plating performed by substitution of gold ions and ions of a base metal.
  • a second insulating resin film 70 is formed on the surface of the conductive film 110.
  • the second opening 300 that exposes a part of the conductive film 110 is formed outside the region formed on the semiconductor chip 40 in the second insulating resin film 70.
  • the method for forming the second insulating resin film 70 and the second opening 300 is the same as the method for forming the first insulating resin film 60 and the first opening 250. it can.
  • a photosensitive resin composition used for forming the first insulating resin film 60 can be used as a material for forming the second insulating resin film 70.
  • the solder bump 80 or the end portion of the bonding wire is melted and fused onto the conductive film 110 exposed in the second opening 300.
  • the semiconductor device 100 according to the present embodiment can be obtained.
  • the semiconductor device 100 may be divided into a plurality of semiconductor packages by cutting along the dicing line formed in the semiconductor device 100 so as to include at least one semiconductor chip 40. it can.
  • a semiconductor having a multilayer wiring structure in which a conductive film (wiring layer) and an insulating resin film are stacked in this order starting from the structure shown in FIG. Devices can also be made.
  • a semiconductor device including a four-layer conductive film (wiring layer) and a five-layer insulating resin film can be manufactured.
  • a method for forming the conductive film (wiring layer) a method similar to the method for forming the conductive film 110 can be used.
  • the insulating resin film can be formed using the same method as the first insulating resin film 60.
  • the solder bump 80 or the end of the bonding wire is melted to the outermost layer and melted to the conductive film (wiring layer) by the same method as described above. By attaching, the obtained semiconductor device can be electrically connected.
  • the manufacturing method described above relates to a method of forming an insulating resin film and a conductive film (wiring layer) only on one surface of the structure starting from the structure shown in FIG.
  • the structure shown in FIG. 1C is in a state where the surface of the semiconductor chip 40 opposite to the side on which the electrode pads 30 are disposed is also exposed, the structure is insulated from both surfaces of the structure.
  • a conductive resin film may be formed.
  • the manufacturing method can also be applied to a process for manufacturing a chip-sized semiconductor package. From the viewpoint of improving the productivity of a semiconductor package, the process for manufacturing the wafer level package described above in the background section. Or, it is preferably applied to a process for producing a panel level package on the premise that a large area panel larger than the wafer size is used.
  • the manufacturing method according to the present embodiment is a method characterized in that the semiconductor chip 40 is sealed from the surface of the semiconductor chip 40 on the side where the electrode pads 30 are disposed. And different. However, also in the manufacturing method according to the present embodiment, a semiconductor device having excellent adhesion between the sealing material 10 and the first insulating resin film 60 can be obtained, as in the first embodiment. The effect of.
  • This manufacturing method will be described with reference to FIGS. 4 to 5 are diagrams for explaining an example of a method for manufacturing the semiconductor device 100 according to the present embodiment.
  • a support 500 having a release film disposed on one surface of a base substrate is prepared.
  • the base substrate include a panel, a wafer, a glass substrate, and a stainless plate.
  • the semiconductor chip 40 in which the metal pillar 130 is formed on the electrode pad 30 is disposed on the release film of the support 500 described above. At this time, the semiconductor chip 40 is disposed on the support 500 such that the electrode pad 30 provided in the semiconductor chip 40 faces the surface opposite to the surface on which the support 500 is disposed.
  • the semiconductor chip 40 is sealed from the surface of the semiconductor chip 40 on the side where the electrode pads 30 are disposed, using a semiconductor sealing resin composition.
  • the sealing material 10 is polished and removed so that the surface of the metal pillar 130 formed on the electrode pad 30 in the semiconductor chip 40 is exposed.
  • the support 500 is separated and selectively removed.
  • the semiconductor chip 40, the electrode pad 30, and the metal pillar 130 are embedded in the sealing material 10, and the side opposite to the surface on which the electrode pad 30 is disposed in the metal pillar 130. It is possible to obtain a structure in which the surface is exposed.
  • the support 500 is preferably peeled after reducing the adhesion between the support 500 and the sealing material 10.
  • the material forming the adhesion site in the support 500 is deteriorated by, for example, performing ultraviolet irradiation or heat treatment on the adhesion site between the support 500 and the sealing material 10. It is preferable to peel after reducing the adhesion.
  • the selective removal described above refers to removing a part or all of the support 500.
  • Methods such as a chemical etching method using an acidic liquid or an alkaline liquid, a physical polishing method, a physical peeling method, a plasma irradiation method, a laser ablation method, and the like can be employed. Among them, a method of chemically removing with an acidic solution or an alkaline solution is preferable. Specific examples of the acidic solution used at this time include mixed acids and aqueous ferric chloride solutions.
  • the timing of peeling the support 500 is not limited to the timing described above with reference to FIG. 4D, and may be after the semiconductor device 100 shown in FIG. 5 is manufactured.
  • the semiconductor device 100 shown in FIG. 5 can be obtained.
  • the photosensitive resin composition used in this manufacturing method is used to form permanent films such as the first insulating resin film 60, the second insulating resin film 70, and the passivation film 50, for example.
  • the cured film which comprises a permanent film will be obtained by hardening the photosensitive resin composition.
  • a resin film obtained by applying a photosensitive resin composition is patterned into a desired shape by exposure and development, and then the permanent film is formed by curing the resin film by heat treatment or the like. .
  • the photosensitive resin composition used for this manufacturing method contains alkali-soluble resin. And the photosensitive resin composition used for this manufacturing method was controlled so that the surface tension of the droplet made of the photosensitive resin composition measured by the hanging drop method was 20 mN / m or more and 45 mN / m or less. Need to be. By carrying out like this, the wettability with respect to the sealing material 10 of the photosensitive resin composition used in order to form the 1st insulating resin film 60 can be improved. Therefore, according to this manufacturing method, when the first insulating resin film 60 is formed by using the photosensitive resin composition in which the surface tension of the droplets is within the above numerical range, It is possible to effectively suppress the occurrence of inconvenience due to coating unevenness of the conductive resin composition.
  • the first insulating resin film 60 excellent in reliability is formed on the sealing material 10 by using the photosensitive resin composition in which the surface tension of the droplet is within the above numerical range.
  • the photosensitive resin composition used for this manufacturing method compared with the conventional resin material, the familiarity (applicability
  • the photosensitive resin composition having a surface tension within the above numerical range it is excellent in reliability from the viewpoint of suppressing inconvenience caused by uneven coating of the photosensitive resin composition such as repelling. Further, the first insulating resin film 60 can be manufactured with a high yield. Thereby, in the case where the shear stress generated by the difference in linear expansion coefficient between the materials forming the first insulating resin film 60 and the sealing material 10 that is the adherend is applied. However, as a result, it is possible to prevent peeling or cracking from occurring at the bonding interface. Specifically, by using a photosensitive resin composition having a surface tension within the above numerical range, the peeling durability at the bonding interface between the first insulating resin film 60 and the sealing material 10 that is the adherend is used. Can be improved to such an extent that it can withstand the shear stress.
  • the lower limit of the surface tension of the droplet made of the photosensitive resin composition used in the present production method measured by the hanging drop method is 20 mN / m or more, preferably 25 mN / m. That's it.
  • the adhesive strength adheresiveness
  • handling properties can be improved.
  • the upper limit value of the surface tension of the droplet made of the photosensitive resin composition used in the present production method measured by the hanging drop method is 45 mN / m or less, as described above, but 42 mN / m or less. Is preferable, and it is more preferable that it is 40 mN / m or less.
  • the first insulating resin film 60 excellent in reliability can be manufactured with high yield.
  • a cured product having a thickness of 10 mm ⁇ 60 mm ⁇ 10 ⁇ m obtained by heat-treating the photosensitive resin composition used in the present production method at 230 ° C. for 90 minutes was used as a test piece, and the stretch rate was 5 mm at 23 ° C.
  • the tensile elongation rate of the test piece is preferably 20% or more and 200% or more, more preferably 25% or more and 200% when a tensile test is performed by a method based on JIS K7161 under the conditions of / min. That's it. By doing so, it is possible to form the first insulating resin film 60 having excellent durability that is not easily affected by the interface stress acting on the bonding interface with the sealing material 10, and as a result, peeling, cracking, etc. Can be prevented from occurring.
  • the glass transition temperature of the cured product obtained by heat-treating the photosensitive resin composition used in this production method under the conditions of 230 ° C. and 90 minutes is preferably 180 ° C. or more, and more preferably, 200 ° C. or higher.
  • the upper limit of the glass transition temperature is sufficient if it is about 300 ° C. or lower.
  • a cured product having a thickness of 10 mm ⁇ 60 mm ⁇ 10 ⁇ m obtained by heat-treating the photosensitive resin composition used in the present production method at 230 ° C. for 90 minutes was used as a test piece, and the stretch rate was 5 mm at 23 ° C.
  • the tensile elastic modulus of the test piece when a tensile test is performed by a method based on JIS K7161 under the conditions of / min is preferably 2 GPa or more and 5 GPa or less, and more preferably 2.5 GPa or more and 4 GPa or less. is there. By doing so, it is possible to form the first insulating resin film 60 having excellent durability that is not easily affected by the interface stress acting on the bonding interface with the sealing material 10, and as a result, peeling, cracking, etc. Can be prevented from occurring.
  • the curing temperature of the photosensitive resin composition used in this production method is preferably 150 ° C. or higher and 250 ° C. or lower, and more preferably 160 ° C. or higher and 230 ° C. or lower.
  • the method of preparing the photosensitive resin composition and the measurement by the hanging drop method by appropriately selecting the type and mixing ratio of each raw material component constituting the photosensitive resin composition. It becomes possible to make the value of the surface tension within a desired range. Specifically, a specific alkali-soluble resin, which will be described later, is dissolved in a specific solvent, and further, the type and content of each component such as a crosslinking agent, a silane coupling agent, a dissolution accelerator, and a surfactant are appropriately set. It is preferable to control. As a method for preparing the photosensitive resin composition, for example, it is considered to be important to mix each component in a nitrogen atmosphere. However, the preparation method of the photosensitive resin composition which concerns on this embodiment is not limited to these.
  • the inventors have controlled the surface tension of the droplets made of the photosensitive resin composition within a specific numerical range, the applicability of the photosensitive resin composition to the sealing material, and the photosensitive resin composition
  • a method for improving the adhesion between the cured product and the sealing material and further improving the reliability of the semiconductor device was studied.
  • an alkali-soluble resin having a specific structural unit is dissolved in a specific solvent, and the dispersibility of the alkali-soluble resin is further increased by additives such as a crosslinking agent, a silane coupling agent, a dissolution accelerator, and a surfactant. I found it important to improve.
  • the insulating resin film in order to improve mechanical properties such as tensile elongation and tensile modulus of the insulating resin film, it is preferable to include, for example, an alkali-soluble resin having a specific structure to be described later.
  • an alkali-soluble resin having a specific structure in order to disperse
  • a crosslinking agent it is preferable to use 2 or more types in combination, for example. Thereby, the entanglement between the alkali-soluble resins can be appropriately controlled. Thereby, the dispersibility of alkali-soluble resin can be improved.
  • silane coupling agent what contains the specific structural unit mentioned later is preferable, for example, Furthermore, it is preferable to combine the alkali-soluble resin of a specific structure, and the silane coupling agent of a specific structure. Moreover, as a solubility promoter, what contains the specific structural unit mentioned later is preferable, for example. Thereby, the compatibility of the raw material components in the photosensitive resin composition can be improved. Furthermore, it is preferable to use what has a specific functional group mentioned later as surfactant, for example. By appropriately controlling the above elements, it is possible to control the surface tension of the droplet made of the photosensitive resin composition within an appropriate numerical range.
  • the photosensitive resin composition contains an alkali-soluble resin as described above.
  • the photosensitive resin composition preferably contains a photosensitive agent from the viewpoint of enabling a coating film obtained by applying the photosensitive resin composition to be patterned by lithography. .
  • a photosensitive agent from the viewpoint of enabling a coating film obtained by applying the photosensitive resin composition to be patterned by lithography.
  • alkali-soluble resin Specific examples of alkali-soluble resins include phenolic resins, hydroxystyrene resins (polyhydroxystyrene), (meth) acrylic acid resins, acrylic resins such as (meth) acrylic ester resins, polybenzoxazole precursors and polyimide precursors, etc.
  • the developability, curability, adhesion and film formability of the photosensitive resin composition, the mechanical strength and heat resistance of the cured film obtained by curing the resin film, and the adhesion to other members are improved.
  • a precursor having an amide bond having a repeating unit represented by the following general formula (1) is particularly preferable.
  • the polybenzoxazole precursor and the polyimide precursor are a kind of polyamide resin and have an amide bond.
  • X and Y are organic groups.
  • R 1 is a hydroxyl group, —O—R 3 , an alkyl group, an acyloxy group, or a cycloalkyl group, and when there are a plurality of R 1 s , they may be the same or different.
  • R 2 is a hydroxyl group, a carboxyl group, —O—R 3 , or —COO—R 3 , and when there are a plurality of R 2 s , they may be the same or different.
  • R 3 in R 1 and R 2 is an organic group having 1 to 15 carbon atoms. When R 1 has no hydroxyl group, at least one of R 2 is a carboxyl group.
  • R 1 is a hydroxyl group.
  • m is an integer from 0 to 8
  • n is an integer from 0 to 8.
  • X, Y, R 1 to R 3 , m and n may be the same for each repeating unit, or may be different from each other.
  • a polyimide resin or a polybenzoxazole resin, or an imide bond and an oxazole ring are generated by causing a heat dehydration or a dehydration reaction using a catalyst.
  • a copolymer is produced.
  • the alkali-soluble resin may further contain one or both of a polyimide resin and a polybenzoxazole resin.
  • the precursor having an amide bond represented by the formula (1) is a polybenzoxazole precursor
  • at least one of R 1 is a hydroxyl group.
  • a dehydration ring closure occurs between R 1 and the amide structure by heat dehydration or a dehydration reaction using a catalyst, and a polybenzoxazole resin having an oxazole ring is generated.
  • the alkali-soluble resin contains at least one of a polybenzoxazole precursor or a polybenzoxazole resin.
  • the precursor having an amide bond represented by the formula (1) is a polyimide precursor
  • at least one of R 2 is a carboxyl group.
  • dehydration ring closure occurs between R 2 and the amide structure by heat dehydration or a dehydration reaction using a catalyst, and a polyimide resin is generated.
  • the alkali-soluble resin contains at least one of a polyimide precursor or a polyimide resin.
  • Examples of the organic group as X of the precursor having an amide bond having the structure represented by the formula (1) include an aromatic group having a structure such as a benzene ring, a naphthalene ring or a bisphenol structure, a pyrrole ring or a furan ring. And a heterocyclic organic group having the structure: and a siloxane group.
  • X in the precursor having an amide bond having a structure represented by the formula (1) is an organic group.
  • X for example, those containing an aromatic ring in the structural unit are preferable.
  • the aromatic ring refers to a benzene ring; a condensed aromatic ring such as a naphthalene ring, an anthracene ring, or a pyrene ring; a heteroaromatic ring such as a pyridine ring or a pyrrole ring.
  • Y in the precursor having an amide bond having a structure represented by the formula (1) is an organic group, and examples of such an organic group include the same as X.
  • Y in the formula (1) is, for example, an aromatic group having a structure such as a benzene ring, a naphthalene ring or a bisphenol structure, a heterocyclic organic group having a structure such as a pyrrole ring, a pyridine ring or a furan ring, and a siloxane group. Is mentioned.
  • Y in the precursor having an amide bond having a structure represented by the formula (1) is an organic group.
  • Y what contains an aromatic ring in the structural unit is preferable, for example.
  • mechanical properties such as glass transition temperature, tensile elongation, and tensile elastic modulus of the insulating resin film can be improved, and the reliability of the semiconductor device can be improved.
  • both X and Y contain an aromatic ring.
  • the molecular chains of the precursor can easily interact with each other, mechanical properties such as glass transition temperature, tensile elongation, and tensile elastic modulus of the insulating resin film can be further improved, and the reliability of the semiconductor device can be further improved.
  • the terminal amino group of the precursor is converted to an alkenyl group, an alkynyl group, and the like so as not to affect the mechanical properties and heat resistance of the cured product.
  • the end-capping can also be carried out as an amide using an acid anhydride or monocarboxylic acid containing an aliphatic group or a cyclic compound group having at least one organic group selected from hydroxyl groups.
  • the precursor having an amide bond represented by formula (1) may have a group in which at least one end of the precursor is end-capped with a nitrogen-containing cyclic compound. Thereby, adhesiveness with a metal wiring (especially copper wiring) etc. can be improved.
  • acid anhydrides or monocarboxylic acids containing an aliphatic group or cyclic compound group having at least one organic group selected from alkenyl groups, alkynyl groups, and hydroxyl groups include maleic anhydride, citraconic anhydride, and the like.
  • 2,3-dimethylmaleic anhydride 4-cyclohexene-1,2-dicarboxylic anhydride, exo-3,6-epoxy-1,2,3,6-tetrahydrophthalic anhydride, 5-norbornene -2,3-dicarboxylic anhydride, methyl-5-norbornene-2,3-dicarboxylic anhydride, itaconic anhydride, het acid anhydride, 5-norbornene-2-carboxylic acid, 4-ethynylphthalic anhydride , 4-phenylethynylphthalic anhydride, 4-hydroxyphthalic anhydride, 4-hydroxybenzoic acid, and 3-hydroxybenzoic acid It can be mentioned. These may be used alone or in combination of two or more, and a part of the end-capped amide moiety may be dehydrated and closed.
  • a precursor having an amide bond represented by formula (1) at least one organic group selected from an alkenyl group, an alkynyl group, and a hydroxyl group is used as the terminal carboxylic acid residue of the precursor.
  • An amine derivative containing a group of aliphatic groups or cyclic compound groups can be used to end-cleave as an amide.
  • a group end-capped with a nitrogen-containing cyclic compound is added to at least one of the ends to such an extent that the mechanical properties and heat resistance of the cured product are not affected. You may have. Thereby, adhesiveness with a metal wiring (especially copper wiring) etc. can be improved.
  • the nitrogen-containing cyclic compound include 1- (5-1H-triazoyl) methylamino group, 3- (1H-pyrazoyl) amino group, 4- (1H-pyrazoyl) amino group, and 5- (1H-pyrazoyl) amino group.
  • the precursor having an amide bond represented by the formula (1) is selected from, for example, diamine, bis (aminophenol) or diaminophenol having a structure containing a group represented by X in the formula (1).
  • a dicarboxylic acid to obtain a precursor having an amide bond represented by the formula (1)
  • 1-hydroxy-1,2,3-benzotriazole or the like is used to increase the reaction yield.
  • a dicarboxylic acid derivative of the active ester type reacted in advance may be used.
  • the precursor having an amide bond represented by the formula (1) is heated at, for example, 300 to 400 ° C., the precursor is dehydrated and closed, and as a result, polyimide, polybenzoxazole, or both A resin having excellent heat resistance can be obtained in the form of a copolymer.
  • the precursor having an amide bond represented by the formula (1) is a polybenzoxazole precursor
  • at least one of R 1 in the formula (1) is a hydroxyl group.
  • a dehydration ring closure occurs between R 1 and the amide structure by heat dehydration or a dehydration reaction using a catalyst, and a polybenzoxazole resin having an oxazole ring is generated.
  • the alkali-soluble resin contains at least one of a polybenzoxazole precursor or a polybenzoxazole resin.
  • the precursor having an amide bond represented by the formula (1) is a polyimide precursor
  • at least one of R 2 in formula (1) is a carboxyl group.
  • dehydration ring closure occurs between R 2 and the amide structure by heat dehydration or a dehydration reaction using a catalyst, and a polyimide resin is generated.
  • the alkali-soluble resin contains at least one of a polyimide precursor or a polyimide resin.
  • the phenol resin in the alkali-soluble resin examples include a reaction product of a phenol compound typified by a novolak type phenol resin and an aldehyde compound, or a reaction product of a phenol compound typified by a phenol aralkyl resin and a dimethanol compound or a derivative thereof. Can be used. Among these, it is particularly preferable to use a phenol resin obtained by reacting a phenol compound with an aldehyde compound from the viewpoint of suppressing film loss in the development process, improving thermal stability, and manufacturing cost.
  • phenol compounds include cresols such as phenol, o-cresol, m-cresol or p-cresol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3, Xylenols such as 4-xylenol or 3,5-xylenol, ethylphenols such as o-ethylphenol, m-ethylphenol or p-ethylphenol, alkylphenols such as isopropylphenol, butylphenol or p-tert-butylphenol, or Polyhydric phenols such as resorcin, catechol, hydroquinone, pyrogallol or phloroglucin can be used. These phenol compounds can be used alone or in combination of two or more.
  • the aldehyde compound is not particularly limited as long as it is an organic group having an aldehyde group.
  • formalin, paraformaldehyde, acetaldehyde, benzaldehyde, or salicylaldehyde can be used.
  • the benzaldehyde one substituted with at least one of an alkyl group, an alkoxy group or a hydroxy group, or an unsubstituted one can be used.
  • These aldehyde compounds can be used alone or in combination of two or more.
  • a phenol resin that is an alkali-soluble resin is obtained by synthesizing the phenol compound and the aldehyde compound by reacting them under an acid catalyst.
  • the acid catalyst is not particularly limited, and for example, oxalic acid, nitric acid, sulfuric acid, diethyl sulfate, acetic acid, p-toluenesulfonic acid, phenolsulfonic acid, or benzenesulfonic acid can be used.
  • dimethanol compound examples include 1,4-benzenedimethanol, 1,3-benzenedimethanol, 4,4′-biphenyldimethanol, 3,4′-biphenyldimethanol, 3,3′-biphenyldimethanol, or Dimethanol compounds such as 2,6-naphthalenediethanol, 1,4-bis (methoxymethyl) benzene, 1,3-bis (methoxymethyl) benzene, 4,4′-bis (methoxymethyl) biphenyl, 3,4 Bis (alkoxymethyl) compounds such as' -bis (methoxymethyl) biphenyl, 3,3'-bis (methoxymethyl) biphenyl or methyl 2,6-naphthalenedicarboxylate, or 1,4-bis (chloromethyl) benzene, 1,3-bis (chloromethyl) benzene, 1,4-bis (bromomethyl) benzene, 1, -Bis (bromomethyl) benzene, 4,4'-bis (chloromethyl)
  • hydroxystyrene resin in the alkali-soluble resin a polymerization reaction product or a copolymerization reaction product obtained by radical polymerization, cation polymerization, or anion polymerization of hydroxystyrene, styrene, or a derivative thereof can be used.
  • the phenol resin in the alkali-soluble resin examples include a reaction product of a phenol compound typified by a novolak type phenol resin and an aldehyde compound, or a reaction product of a phenol compound typified by a phenol aralkyl resin and a dimethanol compound or a derivative thereof. Can be used. Among these, it is particularly preferable to use a phenol resin obtained by reacting a phenol compound with an aldehyde compound from the viewpoint of suppressing film loss in the development process, improving thermal stability, and manufacturing cost.
  • the alkali-soluble resin is a polymer of a cyclic olefin monomer such as norbornene or cycloalkane (cyclic olefin-based resin)
  • examples of the polymerization method of the polymer include an addition polymerization method and a ring-opening polymerization method. These polymers may be random copolymers, block copolymers, or alternating copolymers.
  • cyclic olefin monomer examples include monocyclic compounds such as cyclohexene and cyclooctene, norbornene, norbornadiene, dicyclopentadiene, dihydrodicyclopentadiene, tetracyclododecene, tricyclopentadiene, dihydrotricyclopentadiene, tetra And polycyclic compounds such as cyclopentadiene and dihydrotetracyclopentadiene.
  • bonded with these monomers can also be used as a cyclic olefin monomer which concerns on this embodiment.
  • the cyclic olefin resin according to the present embodiment is preferably a norbornene resin from the viewpoint of heat resistance.
  • the norbornene-based resin described above is, for example, ring-opening metathesis polymerization (ROMP), a combination of ROMP and a hydrogenation reaction, polymerization using radicals or cations, polymerization using a cationic palladium polymerization initiator, and other polymerization initiation. It can be obtained by all known polymerization methods such as polymerization using an agent (for example, polymerization initiator of nickel or other transition metal).
  • the cyclic olefin resin according to the present embodiment is an addition polymer of a cyclic olefin monomer
  • specific examples of the addition polymer include those shown in the following (1) to (3).
  • (1) Addition (co) polymer of norbornene type monomer obtained by addition (co) polymerization of norbornene type monomer.
  • (2) An addition copolymer of a norbornene type monomer and ethylene or ⁇ -olefins.
  • An addition polymer such as an addition copolymer of a norbornene-type monomer and a non-conjugated diene and, if necessary, another monomer.
  • the above addition polymer can be obtained by coordination polymerization using a metal catalyst or radical polymerization.
  • a polymer in coordination polymerization, can be obtained by polymerizing a monomer in a solution in the presence of a transition metal catalyst.
  • metal catalysts used for coordination polymerization include (toluene) bis (perfluorophenyl) nickel, (mesylene) bis (perfluorophenyl) nickel, (benzene) bis (perfluorophenyl) nickel, bis (tetrahydro) bis Known metal catalysts such as (perfluorophenyl) nickel, bis (ethyl acetate) bis (perfluorophenyl) nickel, and bis (dioxane) bis (perfluorophenyl) nickel may be mentioned.
  • the cyclic olefin-based resin according to the present embodiment is a ring-opening polymer of a cyclic olefin monomer
  • specific examples of the ring-opening polymer include the following (4) to (6).
  • a ring-opening copolymer of a norbornene-type monomer and a non-conjugated diene or other monomer is produced by ring-opening (co) polymerization of at least one or more norbornene-type monomers by a known ring-opening polymerization method using titanium or a tungsten compound as a catalyst. Then, if necessary, the carbon-carbon double bond in the ring-opening (co) polymer is hydrogenated by a conventional hydrogenation method to produce a thermoplastic saturated norbornene resin.
  • the norbornene-based resin may be a ring-opening polymer such as a polymer obtained by hydrogenating the (co) polymer shown in the above (1) to (6) as necessary.
  • the content of the alkali-soluble resin is preferably 10% by weight or more and 70% by weight or less, more preferably 15% by weight or more and 65% by weight or less, based on the total amount of nonvolatile components of the photosensitive resin composition. More preferably, it is 20 to 50 weight%.
  • the curability of the photosensitive resin composition can be improved by setting the content of the alkali-soluble resin to the above lower limit value or more. Thereby, the heat resistance of the permanent film formed using a photosensitive resin composition, mechanical strength, and durability can be improved. On the other hand, the resolution in lithography can be improved by setting the content of the alkali-soluble resin to the upper limit or less.
  • the ratio (weight%) of the non-volatile component in the photosensitive resin composition can be measured as follows, for example. First, 1.0 g of the photosensitive resin composition is weighed out as a sample in an aluminum cup whose weight (w 0 ) has been measured. In this case, the total weight of the sample and the aluminum cup and w 1. Next, the aluminum cup is kept in a hot air dryer adjusted to 210 ° C. under normal pressure for 1 hour, and then taken out of the hot air dryer and cooled to room temperature. Next, the total weight (w 2 ) of the cooled sample and the aluminum cup is measured. And the ratio (weight%) of the non-volatile component in the photosensitive resin composition is computed from the following formula
  • Formula: Non-volatile content (% by weight) (w 2 ⁇ w 0 ) / (w 1 ⁇ w 0 ) ⁇ 100
  • the photosensitive resin composition according to this embodiment may contain a photosensitive agent.
  • a photosensitive agent a compound that generates an acid by light, that is, a photoactive compound can be used.
  • the photosensitive agent include photosensitive diazoquinone compounds, photosensitive diazonaphthoquinone compounds, diaryliodonium salts, triarylsulfonium salts, onium salts such as sulfonium borate salts, 2-nitrobenzyl ester compounds, N-iminosulfonate compounds, Examples thereof include imidosulfonate compounds, 2,6-bis (trichloromethyl) -1,3,5-triazine compounds, and dihydropyridine compounds.
  • a photosensitive diazoquinone compound and a photosensitive diazonaphthoquinone compound that are excellent in sensitivity and solvent solubility are preferable.
  • Specific examples thereof include 1,2-benzoquinonediazide-4-sulfonic acid ester of a phenol compound, 1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,2-naphthoquinonediazide-5-sulfonic acid ester, and the like. Can be mentioned.
  • the content of the photosensitizer is preferably 1 part by weight or more and 50 parts by weight or less, more preferably 5 parts by weight or more and 40 parts by weight or less, and still more preferably, with respect to 100 parts by weight of the alkali-soluble resin. 8 parts by weight or more and 35 parts by weight or less.
  • the photosensitive resin composition according to this embodiment may contain a crosslinking agent.
  • a crosslinking agent known compounds can be used as long as they have a group capable of reacting with an alkali-soluble resin.
  • Specific examples of the crosslinking agent include epoxy compounds, alkoxymethyl compounds, methylol compounds, oxetane compounds and the like.
  • 1 type (s) or 2 or more types can be used in combination in the above specific examples.
  • the dispersibility of alkali-soluble resin can be improved because two or more types of crosslinked structures are appropriately entangled.
  • mechanical properties such as tensile elongation and tensile modulus of the cured product of the photosensitive resin composition can be further improved.
  • the crosslinking agent includes, for example, an alkoxymethyl compound or a methylol compound.
  • Specific examples of the methylol compound suitable as the crosslinking agent include paraxylene glycol.
  • glycidyl ether such as glycidyl ether, adipic acid diglycidyl ester, glycidyl ester such as o-phthalic acid diglycidyl ester, 3,4-epoxycyclohexylmethyl (3,4-epoxycyclohexane) carboxylate, 3 , 4-Epoxy-6-methylcyclohexylmethyl (3,4-epoxy-6-methylcyclohexane) carboxylate, bis (3,4-epoxy 6-methylcyclohexylmethyl) adipate, dicyclopentanediene oxide, bis (2,3-epoxycyclopentyl) ether, Daicel Corporation's Celoxide 2021, Celoxide 2081, Celoxide 2083, Celoxide 2085, Celoxide 8000, Epoxide GT401, etc.
  • LX-01 manufactured by Daiso Corporation
  • Poly-functional alicyclic epoxy resins such as Poly [(2-oxylanyl) -1,2-cyclohexandiol] 2-ethyl-2- (hydroxymethyl) -1,3-propanediol ether (3: 1), EHPE- 3150 (manufactured by Daicel Corporation) can also be used.
  • the photosensitive resin composition can contain one or more of the epoxy compounds exemplified above.
  • crosslinking agent examples include 1,4-bis (methoxymethyl) benzene, 4,4′-biphenyldimethanol, 4,4′-bis (methoxymethyl) biphenyl, manufactured by Honshu Chemical Co., Ltd. TMOM-BP, DML-DP, TMOM-BP-MF, Nicarax MX-270, MX-290, MX-370, etc.
  • the content of the crosslinking agent is preferably 1 part by weight or more and 100 parts by weight or less, more preferably 2 parts by weight or more and 50 parts by weight or less with respect to 100 parts by weight of the alkali-soluble resin. Less than parts by weight.
  • the content of the crosslinking agent is within the above range, a cured film excellent in chemical resistance and resolution can be formed, which is preferable.
  • the photosensitive resin material according to the present embodiment may contain a silane coupling agent.
  • a silane coupling agent preferably contain organosilicon.
  • the silane coupling agent include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacrylate.
  • Examples thereof include silicon compounds obtained by reacting a silane and a silicon compound having an amino group with an acid dianhydride or an acid anhydride.
  • silicon compound having an amino group examples include 3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltriethoxysilane, and the like. These may be used individually by 1 type and may be used in combination of 2 or more type.
  • acid dianhydride or acid anhydride examples include maleic anhydride, chloromaleic anhydride, cyanomaleic anhydride, cytoconic acid, phthalic anhydride, pyromellitic anhydride, 4,4′-biphthalate.
  • acid dianhydride, 4,4′-oxydiphthalic dianhydride, 4,4′-carbonyldiphthalic anhydride, and the like examples include acid dianhydride, 4,4′-oxydiphthalic dianhydride, 4,4′-carbonyldiphthalic anhydride, and the like. These may be used individually by 1 type and may be used in combination of 2 or more type.
  • the silane coupling agent preferably includes, for example, a structural unit represented by the following formula (S1) or formula (S2).
  • S1 and S2 a portion where no atomic symbol is described is arbitrary.
  • the silane coupling agent having a structure close to that of the polybenzoxazole precursor and the polyimide precursor, the amide bond between the photosensitive resin composition and the sealing material strongly interacts with each other.
  • the alkali-soluble resin and the silane coupling agent have an aromatic ring, they interact more strongly by stacking ⁇ electrons.
  • the alkali-soluble resin and the silane coupling agent interact with each other, and the silane coupling agent and the sealing material interact with each other, whereby an insulating resin film made of a cured product of the photosensitive resin composition and Adhesiveness with a sealing material can be improved. Further, peeling and cracking are less likely to occur at the interface between the insulating resin film and the sealing material, and the reliability of the semiconductor device can be improved.
  • silane coupling agent it is preferable to contain 2 or more types from which the structure differs among the said specific examples, for example, and it is more preferable to contain 3 or more types from which a structure differs. Thereby, the affinity of the photosensitive resin composition with respect to the component contained in the sealing material 10 can be improved. Therefore, the adhesiveness between the cured product of the photosensitive resin composition and the sealing material 10 and the reliability of the semiconductor device can be further improved.
  • the silane coupling agent having a different structure preferably contains, for example, one containing a structural unit represented by the above formula (S1) and one containing a structural unit represented by the above formula (S2).
  • the content of the silane coupling agent is preferably 0.05 parts by weight or more and 50 parts by weight or less, and more preferably 0.1 parts by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the alkali-soluble resin. More preferably, it is 0.5 parts by weight or more and 10 parts by weight or less.
  • the content of the silane coupling agent is within the above range, the preservability of the photosensitive resin composition can be improved and a resin film having excellent adhesion to other members can be formed from the composition. .
  • the photosensitive resin composition according to this embodiment may contain a dissolution accelerator.
  • the dissolution accelerator is a component capable of improving the solubility of the exposed portion of the coating film formed using the photosensitive resin composition in the developer and improving scum during patterning.
  • a dissolution accelerator a compound having a phenolic hydroxyl group is preferable.
  • examples of the dissolution accelerator include those having a biphenol type skeleton or bisphenol. Those having an A-type skeleton are preferred. Thereby, the skeleton of the alkali-soluble resin interacts with the dissolution accelerator, and the dispersibility of the alkali-soluble resin can be further improved.
  • the dissolution accelerator having a biphenol type skeleton for example, those represented by the following general formula (D1) are preferable, and those having a bisphenol A type skeleton include, for example, the following general formula ( Those represented by D2) are preferred.
  • R 3 to R 12 are each independently hydrogen, a hydroxyl group, or an organic group having 1 to 10 carbon atoms, At least one of R 3 to R 7 and at least one of R 8 to R 12 includes a hydroxyl group.
  • R 3 to R 12 are each independently hydrogen, a hydroxyl group, or an organic group having 1 to 10 carbon atoms, At least one of R 3 to R 7 and at least one of R 8 to R 12 includes a hydroxyl group.
  • R 3 to R 12 in the general formula (D1) and the general formula (D2) are each independently hydrogen, hydroxyl group, or an organic group having 1 to 10 carbon atoms, for example, hydrogen, hydroxyl Group, or an organic group having 1 to 5 carbon atoms, preferably hydrogen, a hydroxyl group, or an organic group having 1 to 3 carbon atoms.
  • R 3 to R 12 are monovalent organic groups.
  • the monovalent organic group means a valence. That is, each of R 3 to R 12 has one bond that bonds to another atom.
  • organic group constituting R 3 to R 12 in the general formulas (D1) and (D2) include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, and an n-butyl group.
  • Alkyl groups such as isobutyl, sec-butyl, tert-butyl, pentyl, neopentyl, hexyl, heptyl, octyl, nonyl, decyl; alkenyl such as allyl, pentenyl, vinyl Group; alkynyl group such as ethynyl group; alkylidene group such as methylidene group and ethylidene group; aryl group such as tolyl group, xylyl group, phenyl group, naphthyl group and anthracenyl group; aralkyl group such as benzyl group and phenethyl group; adamantyl group , A cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, a cyclooctyl group; Group, and alkaryl groups, such as xylyl
  • At least one of R 3 to R 7 and at least one of R 8 to R 12 includes a hydroxyl group.
  • R 5 and R 10 preferably include a hydroxyl group, and R 5 and R 10 are more preferably a hydroxyl group.
  • the photosensitive resin composition according to the present embodiment may contain a surfactant.
  • the surfactant according to this embodiment includes, for example, a compound containing a fluorine group (for example, a fluorinated alkyl group), a silanol group, or a compound having a siloxane bond as a main skeleton.
  • a fluorine group for example, a fluorinated alkyl group
  • a silanol group for example, a silanol group
  • a compound having a siloxane bond as a main skeleton.
  • it is more preferable to use a fluorine-based surfactant or a silicone-based surfactant as the surfactant and it is particularly preferable to use a fluorine-based surfactant.
  • a fluorosurfactant examples include Megafac F-171, F-173, F-444, F-470, F-471, F-475, F-482, F-477, manufactured by DIC Corporation. Examples thereof include F-554, F-556 and F-557, Novec FC4430 and FC4432 manufactured by Sumitomo 3M Limited.
  • a fluorine-type surfactant shows surfactant provided with a fluorine group.
  • a fluorinated surfactant is preferably included.
  • the content of the surfactant is preferably 0.005 to 5 parts by weight, more preferably 0.01 to 2 parts by weight, with respect to 100 parts by weight of the alkali-soluble resin. Most preferably, it is 0.01 parts by weight or more and 1 part by weight or less. Thereby, the flatness of the resin film obtained using the photosensitive resin composition can be improved.
  • the photosensitive resin composition may contain additives such as a curing agent, an antioxidant, a filler, and a sensitizer in addition to the above-described components as necessary.
  • the photosensitive resin composition may contain a solvent.
  • the photosensitive resin composition has a varnish shape, for example.
  • solvents include N-methyl-2-pyrrolidone, ⁇ -butyrolactone (GBL), N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, di- Propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (PGMEA), methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, and Examples include ethyl pyruvate and methyl-3-methoxypropionate.
  • the solvent among the above specific examples, for example, those having an ester bond are preferable.
  • a solvent provided with an ester bond a heterocyclic compound is preferable, for example.
  • the heterocyclic compound for example, those containing a lactone ring are preferred.
  • the present inventors examined a combination of an alkali-soluble resin and a solvent. As a result, the alkali-soluble resin containing an aromatic ring in the structural unit had low dispersibility in the solvent. In the conventional photosensitive resin composition having a low dispersibility of the alkali-soluble resin, the surface tension of the droplet made of the photosensitive resin composition does not fall within the specific numerical range described above.
  • the applicability of the photosensitive resin composition was low, and a semiconductor device could not be produced. Further, even if the application is made and the semiconductor device is manufactured, there is a disadvantage that the adhesion between the insulating resin film and the sealing material is low and the reliability of the semiconductor device is lowered. Therefore, as a result of studying a solvent that can suitably disperse an alkali-soluble resin containing an aromatic ring in its structural unit, the present inventors have found that the solvent having a specific functional group and structure described above is a dispersion of an alkali-soluble resin. It turned out that it is excellent in property.
  • the content of the solvent is, for example, preferably 100 parts by weight or more, and more preferably 130 parts by weight or more with respect to 100 parts by weight of the alkali-soluble resin. Further, the content of the solvent is preferably 300 parts by weight or less, and more preferably 250 parts by weight or less with respect to 100 parts by weight of the alkali-soluble resin, for example. Thereby, workability
  • the resin composition for encapsulating a semiconductor according to this embodiment examples include an epoxy resin composition containing a thermosetting resin, an inorganic filler, and a curing agent.
  • thermosetting resins include phenol novolak resins, cresol novolak resins, bisphenol A novolak resins, and triazine skeleton-containing phenol novolak resins; unmodified resole phenol resins, tung oil, linseed oil, walnut oil Phenol resins such as resol type phenol resins such as oil-modified resol phenol resin modified with bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol E type epoxy resin, bisphenol M type epoxy resin, Bisphenol type epoxy resins such as bisphenol P type epoxy resin and bisphenol Z type epoxy resin; phenol novolac type epoxy resin, cresol novolac type epoxy resin Novolac type epoxy resins such as: biphenyl type epoxy resins, biphenyl aralkyl type epoxy resins, aryl alkylene type epoxy resins, naphthalene type epoxy resins, anthracene type epoxy resins, phenoxy
  • the content of the thermosetting resin is preferably 1% by mass or more and 38% by mass or less, and more preferably 1.5% by mass or more and 35% by mass or less with respect to the total amount of the semiconductor sealing resin composition. Yes, more preferably 2% by mass or more and 30% by mass or less, and most preferably 3% by mass or more and 25% by mass or less.
  • thermosetting resin it is preferable to use an epoxy resin as the thermosetting resin.
  • said epoxy resin it is possible to use the monomer, oligomer, and polymer in general which have 2 or more of epoxy groups in 1 molecule irrespective of the molecular weight and molecular structure.
  • epoxy resins include biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, stilbene type epoxy resins, hydroquinone type epoxy resins and the like; cresol novolac type epoxy resins, Novolak type epoxy resins such as phenol novolac type epoxy resin and naphthol novolak type epoxy resin; Phenol aralkyl type epoxy such as phenylene skeleton-containing phenol aralkyl type epoxy resin, biphenylene skeleton containing phenol aralkyl type epoxy resin, phenylene skeleton containing naphthol aralkyl type epoxy resin Resin; Trifunctional epoxy resin such as triphenolmethane type epoxy resin and alkyl-modified triphenolmethane type epoxy resin; Examples include modified phenolic epoxy resins such as diene-modified phenolic epoxy resins and terpene-modified phenolic epoxy resins; and heterocyclic-containing epoxy resins such as triazine nucleus-
  • a curing agent may be contained in the semiconductor sealing resin composition.
  • curing agent should just react and cure with a thermosetting resin.
  • specific examples of curing agents that can be used when an epoxy resin is used as the thermosetting resin include linear aliphatic groups having 2 to 20 carbon atoms such as ethylenediamine, trimethylenediamine, tetramethylenediamine, and hexamethylenediamine.
  • Aniline Resol type phenol resins such as resole resin and dimethyl ether resole resin; Novolak type phenol resins such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, non
  • Alicyclic acid anhydride trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid
  • Acid anhydrides including aromatic acid anhydrides such as BTDA polymercaptan compounds such as polysulfides, thioesters, thioethers
  • isocyanate compounds such as isocyanate prepolymers and blocked isocyanates
  • organic acids such as carboxylic acid-containing polyester resins, etc. Is mentioned. These may be used alone or in combination of two or more.
  • a compound having at least two phenolic hydroxyl groups in one molecule is preferable, and specific examples thereof include phenol novolak resin, cresol novolak resin, tert- Examples thereof include novolak-type phenol resins such as butylphenol novolak resin and nonylphenol novolak resin; resol-type phenol resins; polyoxystyrene such as polyparaoxystyrene; phenylene skeleton-containing phenol aralkyl resins and biphenylene skeleton-containing phenol aralkyl resins.
  • the semiconductor sealing resin composition may contain a curing accelerator.
  • the curing accelerator is not particularly limited as long as it accelerates the curing reaction between a functional group such as an epoxy group and the curing agent. Specific examples thereof include 1,8-diazabicyclo [5.4.0] undecene- Diazabicycloalkenes and derivatives thereof such as 7; amine compounds such as tributylamine and benzyldimethylamine; imidazole compounds such as 2-methylimidazole; organic phosphines such as triphenylphosphine and methyldiphenylphosphine; tetraphenylphosphonium tetra Phenylborate, Tetraphenylphosphonium ⁇ Tetrabenzoic acid borate, Tetraphenylphosphonium ⁇ Tetranaphthoic acid borate, Tetraphenylphosphonium ⁇ Tetranaphthoyloxyborate, Tetraphenylphosphonium ⁇ Tetranaphthy
  • the semiconductor sealing resin composition may contain, if necessary, a silane coupling agent such as ⁇ -glycidoxypropyltrimethoxysilane; a colorant such as carbon black; a natural wax; Mold release agents such as wax, higher fatty acids or metal salts thereof, paraffin wax such as paraffin, paraffin oxide or polyethylene oxide; low stress agents such as silicone oil and silicone rubber; ion scavengers such as hydrotalcite; aluminum hydroxide Flame retardants such as: various additives such as antioxidants may be added.
  • a silane coupling agent such as ⁇ -glycidoxypropyltrimethoxysilane
  • a colorant such as carbon black
  • a natural wax such as wax, higher fatty acids or metal salts thereof, paraffin wax such as paraffin, paraffin oxide or polyethylene oxide
  • low stress agents such as silicone oil and silicone rubber
  • ion scavengers such as hydrotalcite
  • aluminum hydroxide Flame retardants such as: various additives such as antioxidants may
  • the resin composition for semiconductor encapsulation contains a release agent such as paraffin wax
  • the affinity between the conventional photosensitive resin composition and the resin composition for semiconductor encapsulation is poor and the coating property is inferior.
  • the photosensitive resin composition according to the present embodiment has a high affinity with the semiconductor sealing resin composition, it exhibits suitable coating properties even when the semiconductor sealing resin composition contains a release agent. It is convenient from the viewpoint that can be done.
  • the resin composition for semiconductor sealing contains a silane coupling agent, for example. Thereby, affinity with the resin composition for sealing and the photosensitive resin composition can be improved, and the applicability
  • the encapsulating resin composition preferably contains aminosilane as a silane coupling agent.
  • the silane coupling agent contained in the resin composition for sealing and the photosensitive resin composition performs the interaction derived from an amide bond, and can improve applicability
  • the pressure-sensitive adhesive member 200 is not particularly limited as long as it can adhere the semiconductor chip 40, but may be formed of a support film and a pressure-sensitive adhesive layer, for example.
  • the constituent material of the support film is not particularly limited.
  • the surface of the support film can be subjected to chemical or physical surface treatment in order to improve the adhesion with the pressure-sensitive adhesive layer.
  • the support film may contain various additives (fillers, plasticizers, antioxidants, flame retardants, antistatic agents) as long as the effects of the invention are not impaired.
  • the pressure-sensitive adhesive layer of the pressure-sensitive adhesive member 200 is composed of a first resin composition containing an acrylic pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, a vinyl alkyl ether-based pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, a polyester-based pressure-sensitive adhesive, and the like. Among them, acrylic pressure-sensitive adhesives are preferable.
  • a polyamide resin which is a polybenzoxazole precursor represented by the following formula (2) was obtained as an alkali-soluble resin (A-1).
  • the obtained alkali-soluble resin (A-1) had a weight average molecular weight of 17,040.
  • the mixed solution was cooled to room temperature, and then the pH was adjusted using a 10 wt% aqueous hydrochloric acid solution so that the pH of the mixed solution was in the range of 6.0 to 7.0.
  • the precipitate obtained by filtering out the precipitate deposited in the mixed solution is washed with water, dried at a temperature of 60 to 70 ° C., and bis-N, N ′-(para-nitrobenzoyl) -2. , 2-bis (4-hydroxyphenyl) propane solid was obtained.
  • the palladium-carbon catalyst was removed by filtering the suspension, and then the obtained filtrate was subjected to an evaporator to evaporate the solvent component.
  • the product thus obtained is dried at 90 ° C., whereby bis-N, N ′-(para-aminobenzoyl) -2,2-bis (4- Hydroxyphenyl) propane was obtained.
  • the obtained alkali-soluble resin (A-2) had a weight average molecular weight of 15,200.
  • a polyamide resin which is a polybenzoxazole precursor represented by the following formula (6) was obtained as an alkali-soluble resin (A-3).
  • the obtained alkali-soluble resin (A-3) had a weight average molecular weight of 17,040.
  • the obtained alkali-soluble resin (A-4) had a weight average molecular weight of 9,800.
  • each raw material component other than the solvent (G) is dissolved in the solvent (G) in the amount shown in the following Table 1 so that the viscosity after preparation is about 500 mPa ⁇ s. And stirred under a nitrogen atmosphere. Then, the filtrate obtained by filtering with a polyethylene filter having a pore size of 0.2 ⁇ m was obtained as a varnish-like photosensitive resin composition.
  • the raw material components of the photosensitive resin composition are shown below.
  • Photosensitizer B-1 Photosensitizer (B-1) obtained in Synthesis Example 5 (diazonaphthoquinone compound)
  • Thermal crosslinking agent (C) Thermal crosslinking agent C-1: para-xylene glycol (Tokyo Chemical Industry Co., Ltd., (C-1) in the following formula (11))
  • Thermal crosslinking agent C-2 Tetramethoxymethylglycoluril (manufactured by Sanwa Chemical Co., Ltd., Nicalak MX-270, (C-2) in the following formula (11))
  • Silane coupling agent D-1 3-methacryloxypropyltrimethoxysilane (manufactured by Shin-Etsu Silicone)
  • Silane coupling agent D-2 Silane coupling agent obtained by Synthesis Example 6
  • Silane coupling agent D-3 Silane coupling agent obtained by Synthesis Example 7
  • Surfactant F-1 Fluorosurfactant (manufactured by DIC, MegaFuck F-556)
  • Surfactant F-2 Fluorosurfactant (Sumitomo 3M, FC4430)
  • Glass transition temperature (Tg) of cured product The obtained varnish-like photosensitive resin compositions according to Examples 1 to 11 and Comparative Example 1 were heat-treated in a nitrogen atmosphere at 230 ° C. for 90 minutes. By curing, a test piece (30 mm ⁇ 5 mm ⁇ 10 ⁇ m thickness) made of a cured product of the photosensitive resin composition was obtained. Subsequently, the thermal expansion coefficient of the test piece obtained at a heating rate of 10 ° C./min was measured using a thermomechanical analyzer (manufactured by Seiko Instruments Inc., TMA / SS6000). Next, based on the obtained measurement results, the glass transition temperature (Tg) of the cured product was calculated from the inflection point of the thermal expansion coefficient. The unit is ° C.
  • -Tensile modulus of cured product The obtained varnish-like photosensitive resin compositions according to Examples 1 to 11 and Comparative Example 1 are cured by heat treatment under conditions of 230 ° C and 90 minutes in a nitrogen atmosphere. Thus, a test piece (10 mm ⁇ 60 mm ⁇ 10 ⁇ m thickness) made of a cured product of the photosensitive resin composition was obtained. Next, the obtained test piece was subjected to a tensile test using a tensile tester (Orientec Co., Ltd., Tensilon RTC-1210A) in a 23 ° C. atmosphere according to JIS K7161, and the measurement results obtained. Based on the above, a stress-strain curve was prepared.
  • a tensile tester Orientec Co., Ltd., Tensilon RTC-1210A
  • the tensile modulus was calculated from the initial gradient of the created stress-strain curve.
  • the unit of tensile modulus is GPa.
  • the stretching speed in the tensile test was 5 mm / min.
  • the evaluation results are shown in Table 1 below.
  • the semiconductor device according to each example was manufactured by the following method.
  • the film was arranged at 10 mm intervals in the vertical and horizontal directions.
  • the simulated element wafer is arranged so that the aluminum circuit faces the surface on the side facing the thermally peelable film in the simulated element wafer.
  • the epoxy resin composition comprises a polyfunctional epoxy resin as an epoxy resin, a polyfunctional phenol resin as a curing agent, silica as an inorganic filler, an aminosilane coupling agent as a coupling agent, and a paraffin wax as a release agent. And was included.
  • the heat-peelable film is peeled off from the carrier while being heated using a hot plate heated to 200 ° C., and then post-cured at 175 ° C. for 4 hours.
  • the encapsulant resin substrate having a built-in semiconductor chip shown in c) (a structure in which a plurality of semiconductor chips are embedded inside the encapsulant, hereinafter also referred to as a chip-embedded encapsulant resin substrate) was obtained.
  • first insulating resin film Formation of first insulating resin film
  • a batch type plasma processing apparatus manufactured by March
  • AP-1000 an oxygen plasma treatment was performed under conditions of an output energy of 800 W, a gas amount of 200 sccm, and a time of 1 minute.
  • a pre-bake treatment at 120 ° C.
  • an insulating resin film provided with an opening so as to expose a part of the aluminum circuit was prepared by heat-treating and curing at 230 ° C. for 90 minutes in an oxygen atmosphere.
  • the chip-embedded sealing material resin substrate provided with the insulating resin film is also referred to as a resin film-equipped sealing material substrate.
  • Example 12 the same photosensitive resin composition as in Example 1 was used, and the resin film was cured under an oxygen atmosphere at a temperature of 180 ° C. for 30 minutes to produce an insulating resin film.
  • Example 13 the same photosensitive resin composition as in Example 1 was used, and the resin film was cured under an oxygen atmosphere at a temperature of 250 ° C. for 30 minutes to produce an insulating resin film.
  • Formation of the second insulating resin film A batch type plasma processing apparatus (manufactured by March) is applied to the surface on the side where the Cu wiring layer is arranged in the sealing material substrate with the Cu wiring layer obtained by the method described above. , AP-1000), and an oxygen plasma treatment was performed under conditions of an output energy of 800 W, a gas amount of 200 sccm, and a time of 1 minute. Next, using a spin coater, the varnish-like photosensitive resin composition produced by the above-described method was applied to the surface of the encapsulant substrate with a Cu wiring layer on which the Cu wiring layer was disposed. Thereafter, a pre-bake treatment was performed at 120 ° C.
  • the exposed portion was dissolved and removed by performing paddle development processing twice while adjusting, and then rinsed with pure water for 10 seconds. Thereafter, an insulating resin film provided with an opening so as to expose a part of the Cu wiring layer is produced by heat-treating under an oxygen atmosphere at 230 ° C. for 90 minutes to form a desired semiconductor. Got the device.
  • size of 35 mm x 35 mmx300 micrometer thickness was produced by the method similar to the method mentioned above.
  • a batch type plasma processing apparatus manufactured by March, AP-1000 is used for the surface on the side where the semiconductor chip is arranged in the obtained semiconductor chip embedded sealing resin substrate, the output energy is 800 W, Oxygen plasma treatment was performed under conditions of a gas amount of 200 sccm and a time of 1 minute.
  • the first to third embodiments manufactured by the above-described method so that the film thickness becomes 10 ⁇ m with respect to the surface on the side where the semiconductor chip is disposed in the semiconductor chip embedded sealing resin substrate. 13.
  • a varnish-like photosensitive resin composition according to Comparative Example 1 was applied.
  • the structure for evaluation was obtained by performing a prebaking process for 120 minutes at 120 degreeC with a hotplate.
  • the appearance of the resin film made of the photosensitive resin composition in the structure was evaluated based on the following criteria.
  • the semiconductor chip-embedded sealing material resin substrate is used by cutting a region 5 mm from the end. For this reason, there is no practical problem with repelling in an area within 5 mm.
  • Adhesiveness between cured product of photosensitive resin composition and sealing material First, a semiconductor chip built-in sealing material resin substrate having a size of 35 mm ⁇ 35 mm ⁇ 300 ⁇ m was prepared by the same method as described above. . Next, a batch type plasma processing apparatus (manufactured by March, AP-1000) is used for the surface on the side where the semiconductor chip is arranged in the obtained semiconductor chip embedded sealing resin substrate, the output energy is 800 W, Oxygen plasma treatment was performed under conditions of a gas amount of 200 sccm and a time of 1 minute.
  • the first to third embodiments manufactured by the above-described method so that the film thickness becomes 10 ⁇ m with respect to the surface on the side where the semiconductor chip is disposed in the semiconductor chip embedded sealing resin substrate.
  • prebaking treatment was performed at 120 ° C. for 4 minutes on a hot plate.
  • cured material of the photosensitive resin composition was obtained by heat-processing on 230 degreeC and 90-minute conditions in nitrogen atmosphere.
  • the obtained resin film was cut into 11 pieces at 1 mm intervals in the vertical and horizontal directions using a cutter. In this way, a structure having 100 independent resin films was obtained.
  • the obtained structure was subjected to a treatment (pressure cooker treatment) at 125 ° C., a relative humidity of 100%, for 300 hours using a pressure cooker tester device.
  • a peeling test was performed in which the tape was peeled off after a cellophane (registered trademark) having an adhesive strength of 3 N / 10 mm or more was sufficiently applied to the resin film in the treated structure.
  • Table 1 shows the number of resin films peeled by the peel test.
  • produces with respect to the semiconductor chip built-in sealing material resin substrate, it was not able to apply
  • ⁇ Reliability of semiconductor device Ten semiconductor devices according to Examples 1 to 13 obtained by the above-described method were subjected to 500 cycles in a temperature range of ⁇ 65 ° C. to 150 ° C. in a thermal cycle tester. A cold cycle test was conducted. Subsequently, about the semiconductor device after a thermal cycle test, the cross section was cut out and the presence or absence of peeling and a crack was confirmed about the interface between the resin film which consists of hardened
  • any semiconductor device including an insulating resin film formed using a photosensitive resin composition whose surface tension measured by the hanging drop method satisfies a predetermined condition is sealed. It was confirmed that it was excellent in reliability in terms of the presence or absence of peeling and cracks at the bonding interface between the stopper and the insulating resin film. Further, when the photosensitive resin composition of Comparative Example 1 was used, a desired insulating resin film could not be formed on the sealing material due to the occurrence of repellency. That is, when the photosensitive resin composition of Comparative Example 1 was used, a desired semiconductor device could not be produced.
  • Comparative Example 2 Further, as the semiconductor device of Comparative Example 2, the same photosensitive resin composition as that of Example 1 described above was used, and a semiconductor device was manufactured by the same method as Example 1 without performing oxygen plasma treatment. Specifically, when forming the first insulating resin film, the oxygen plasma treatment was not performed on the surface of the chip-embedded sealing material resin substrate on the side where the semiconductor chip is disposed. Further, when forming the second insulating resin film, the oxygen plasma treatment was not performed on the surface of the sealing material substrate with the Cu wiring layer on which the Cu wiring layer is disposed. Except for these, a semiconductor device was prepared by the same method as in Example 1, and a semiconductor device of Comparative Example 2 was obtained.
  • paintability with respect to the sealing material of the photosensitive resin composition concerning the semiconductor device of the comparative example 2 was evaluated. Specifically, the surface of the semiconductor chip-embedded sealing material resin substrate on which the semiconductor chip is arranged is not subjected to oxygen plasma treatment, and the photosensitive resin composition is formed in the same manner as in Example 1. The applicability to the sealing material was evaluated. The evaluation results are shown in Table 2 below.
  • the adhesion between the cured product of the photosensitive resin composition and the sealing material according to the semiconductor device of Comparative Example 2 was evaluated. Specifically, the surface of the semiconductor chip-embedded sealing material resin substrate on which the semiconductor chip is arranged is not subjected to oxygen plasma treatment, and the photosensitive resin composition is formed in the same manner as in Example 1. The adhesion between the cured product and the sealing material was evaluated. The evaluation results are shown in Table 2 below.
  • the semiconductor device of each example has a coating property with respect to the sealing material of the photosensitive resin composition, and a cured product and the sealing material of the photosensitive resin composition, compared with the semiconductor device of Comparative Example 2. It was confirmed that the adhesiveness and the reliability of the semiconductor device were excellent.

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JP7322580B2 (ja) 2019-08-09 2023-08-08 住友ベークライト株式会社 電子装置の製造方法
JP2021128300A (ja) * 2020-02-17 2021-09-02 住友ベークライト株式会社 感光性樹脂組成物、および半導体装置の製造方法
WO2021241447A1 (ja) * 2020-05-26 2021-12-02 ローム株式会社 半導体装置、および半導体装置の製造方法
CN117059583A (zh) * 2023-10-12 2023-11-14 江苏芯德半导体科技有限公司 一种具有异质胶材的晶圆级扇出型封装结构及其封装方法
CN117059583B (zh) * 2023-10-12 2024-01-09 江苏芯德半导体科技有限公司 一种具有异质胶材的晶圆级扇出型封装结构及其封装方法

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