WO2017081951A1 - ヒータ - Google Patents
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- Publication number
- WO2017081951A1 WO2017081951A1 PCT/JP2016/078892 JP2016078892W WO2017081951A1 WO 2017081951 A1 WO2017081951 A1 WO 2017081951A1 JP 2016078892 W JP2016078892 W JP 2016078892W WO 2017081951 A1 WO2017081951 A1 WO 2017081951A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ceramic substrate
- heating resistor
- heating
- heater
- groove portion
- Prior art date
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0202—Switches
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/003—Heaters using a particular layout for the resistive material or resistive elements using serpentine layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
Definitions
- the present invention relates to a heater.
- a ceramic heater for a semiconductor manufacturing apparatus described in Japanese Patent Application Laid-Open No. 2004-146567 (hereinafter also referred to as Patent Document 1) is known.
- a ceramic heater for a semiconductor manufacturing apparatus described in Patent Document 1 has a ceramic substrate (first ceramic substrate) having a wafer mounting surface (heating surface) on the upper surface and a resistance heating element (heating resistor) on the lower surface; And another ceramic substrate (second ceramic substrate) provided on the lower surface of the first ceramic substrate via an adhesive layer.
- the heater includes a first ceramic substrate having a heating surface on one main surface, a second ceramic substrate provided to cover the other main surface of the first ceramic substrate with one main surface, and the second ceramic substrate A heating resistor provided on the one main surface of the substrate; and an adhesive layer for bonding the first ceramic substrate and the second ceramic substrate so as to cover the heating resistor.
- FIG. It is sectional drawing which shows a heater. It is a schematic diagram which shows the wiring pattern of the heating resistor in the heater shown in FIG. It is sectional drawing which shows the other example of a heater. It is a schematic diagram which shows the wiring pattern of the heating resistor in the heater of another example. It is an expanded sectional view which shows the cross section of the heating resistor in the heater of another example. It is an expanded sectional view which shows the cross section of the heating resistor in the heater of another example. It is an expanded sectional view which shows the cross section of the heating resistor in the heater of another example.
- FIG. 1 is a cross-sectional view showing the heater 100.
- the heater 100 is provided so as to cover the first ceramic substrate 1 having the heating surface 10 on one main surface and the other main surface of the first ceramic substrate 1 with one main surface.
- the second ceramic substrate 2, the heating resistor 3 provided on one main surface of the second ceramic substrate 2, and the first ceramic substrate 1 and the second ceramic substrate 2 are bonded to cover the heating resistor 3.
- Layer 5 The second ceramic substrate 2, the heating resistor 3 provided on one main surface of the second ceramic substrate 2, and the first ceramic substrate 1 and the second ceramic substrate 2 are bonded to cover the heating resistor 3.
- “one main surface” of the first ceramic substrate 1 is the upper surface of the first ceramic substrate 1, and “the other main surface” of the first ceramic substrate 1 is the lower surface of the first ceramic substrate 1. .
- “one main surface” of the second ceramic substrate 2 is the upper surface of the second ceramic substrate 2, and “the other main surface” of the second ceramic substrate 2 is the lower surface of the second ceramic substrate 2. Therefore, for convenience of explanation, the following description will be made using the words of the upper surface and the lower surface instead of “one main surface” and “the other main surface”.
- the “one main surface” is not limited to the upper surface, and there is no problem even if it is a surface other than the upper surface, such as the lower surface or the side surface, depending on the orientation of the heater 100.
- the “other main surface” is not limited to the lower surface, and there is no problem even if it is a surface other than the lower surface such as the upper surface or the side surface according to the orientation of the heater 100.
- the first ceramic substrate 1 is a plate-like member having a heating surface 10 on the upper surface.
- the first ceramic substrate 1 is a member that contacts an object to be heated.
- the first ceramic substrate 1 is a member for reducing unevenness of heat transmitted from the heating resistor 3 and transmitting it to the heating surface 10.
- the first ceramic substrate 1 heats an object to be heated, such as a silicon wafer or a silicon wafer chip, on the heating surface 10 on the upper surface.
- the heater 100 is a member having, for example, a rectangular shape when viewed in plan. In this case, the first ceramic substrate 1 and the second ceramic substrate 2 are also rectangular.
- the first ceramic substrate 1 is made of a ceramic material such as alumina, aluminum nitride, silicon nitride, or yttria.
- the dimensions of the first ceramic substrate 1 can be set such that the vertical length is 10 to 120 mm, the horizontal length is 10 to 120 mm, and the thickness is 1 to 10 mm.
- the diameter can be set to 50 mm to 450 mm, and the thickness can be set to 1 to 10 mm.
- the heater 100 may further include a temperature sensor 4 inside the first ceramic substrate 1.
- the temperature sensor 4 is made of a conductor pattern, for example. The temperature can be measured by measuring the change in the resistance value of the conductor pattern.
- the temperature sensor 4 is formed of a conductor pattern, for example, the temperature sensor 4 is drawn around almost the entire surface in a repeatedly bent shape.
- the conductor pattern is made of a metal material such as tungsten, molybdenum, or platinum.
- a sensor in which a thermocouple is embedded in the ceramic substrate 1 can be used.
- the temperature sensor 4 By embedding the temperature sensor 4 in the first ceramic substrate 1, for example, the temperature can be measured at a portion closer to the heating surface 10 as compared with the case where the temperature sensor 4 is embedded in the second ceramic substrate 2. Therefore, the measurement result in the temperature sensor 4 can be brought close to the actual temperature of the heating surface 10.
- the second ceramic substrate 2 is a member provided with a heating resistor 3 on the upper surface.
- the second ceramic substrate 2 is provided so as to cover the lower surface of the first ceramic substrate 1 with the upper surface.
- the first ceramic substrate 1 and the second ceramic substrate 2 are bonded via an adhesive layer 5.
- the adhesive layer 5 is in contact with the lower surface of the first ceramic substrate 1 and the upper surface of the second ceramic substrate 2.
- the second ceramic substrate 2 is made of a ceramic material such as alumina, aluminum nitride, silicon nitride, or yttria, for example.
- the second ceramic substrate 2 may be made of the same material as the first ceramic substrate 1.
- the second ceramic substrate 2 is, for example, a rectangular member.
- the second ceramic substrate 2 can have a vertical length of 10 to 120 mm, a horizontal length of 10 to 120 mm, and a thickness of 1 to 10 mm.
- the diameter can be set to 50 mm to 450 mm, and the thickness can be set to 1 to 10 mm.
- the first ceramic substrate 1 and the second ceramic substrate 2 are formed, for example, such that the side surfaces are flush with each other.
- the second ceramic substrate 2 may have irregularities on the lower surface. Since the second ceramic substrate 2 has irregularities on the lower surface, the heat dissipation property on the lower surface can be improved. Thereby, the temperature of the heater 100 can be quickly lowered.
- a plurality of juxtaposed grooves can be used.
- the groove is formed so as to extend along the horizontal direction or the vertical direction of the second ceramic substrate 2 and is formed on the entire lower surface of the second ceramic substrate 2.
- the heating resistor 3 is a member for heating the sample placed on the heating surface 10 on the upper surface of the first ceramic substrate 1.
- the heating resistor 3 is provided on the upper surface of the second ceramic substrate 2.
- the heating resistor 3 can be heated.
- the heat generated by the heating resistor 3 is transmitted through the adhesive layer 5 and the inside of the first ceramic substrate 1 and reaches the heating surface 10 on the upper surface of the first ceramic substrate 1.
- the sample installed on the heating surface 10 can be heated.
- the heating resistor 3 is a linear pattern having a plurality of folded portions, and is formed on almost the entire top surface of the second ceramic substrate 2. Thereby, it can suppress that dispersion
- FIG. Note that FIG. 2 and FIG. 4 described later are not cross-sectional views, but the heating resistor 3 is hatched for the purpose of helping understanding.
- the heating resistor 3 contains a conductor component and a glass component.
- a conductor component metal materials, such as silver palladium, platinum, aluminum, or gold
- a metal that can be sintered in the atmosphere may be selected as the metal material.
- the glass component includes oxides of materials such as silicon, aluminum, bismuth, calcium, boron, and zinc.
- the following method can be used for temperature control of the heater 100.
- the temperature can be measured by providing the temperature sensor 4 described above inside the first ceramic substrate 1.
- the voltage applied to the heating resistor 3 is adjusted based on the temperature of the first ceramic substrate 1 measured as described above. Thereby, the heat generation of the heating resistor 3 can be controlled so that the temperature of the heating surface 10 becomes constant.
- the adhesive layer 5 is a member for bonding the first ceramic substrate 1 and the second ceramic substrate 2.
- the adhesive layer 5 is provided between the lower surface of the first ceramic substrate 1 and the upper surface of the second ceramic substrate 2.
- the adhesive layer 5 bonds the first ceramic substrate 1 and the second ceramic substrate 2 together with the heating resistor 3.
- the adhesive layer 5 is made of, for example, a resin material such as silicone resin or epoxy resin.
- the thickness of the adhesive layer 5 can be set to 0.01 to 0.3 mm, for example.
- the adhesive layer 5 may contain a filler such as alumina or aluminum nitride.
- the heat generating resistor 3 is provided on the upper surface of the second ceramic substrate 2, so that the heat generated in the heat generating resistor 3 is not only the first ceramic substrate 1 but also the adhesive layer 5. Can also be diffused. Thereby, the soaking
- the upper surface of the second ceramic substrate 2 may have a groove portion 21, and the heating resistor 3 may be provided on the bottom surface of the groove portion 21 along the shape of the groove portion 21. Since the heating resistor 3 is provided in the groove portion 21, when the first ceramic substrate 1 and the second ceramic substrate 2 are bonded by the adhesive layer 5, the heating resistor 3 is directly above the portion where the heating resistor 3 is provided. The variation in the thickness of the adhesive layer 5 immediately above the portion where the heating resistor 3 is not provided can be reduced. Thereby, the thermal uniformity in the heating surface 10 can be improved.
- the dimensions of the groove 21 can be set, for example, such that the depth is 1 to 2 times the thickness of the heating resistor 3 and the width of the opening is 1 to 1.2 times the width of the bottom surface.
- the groove portion 21 is formed to have a plurality of folded portions.
- FIG. 4 is not a cross-sectional view, but hatching is also applied to a region corresponding to the groove 21 in addition to the heating resistor 3 for the purpose of facilitating understanding.
- the groove portion 21 is provided corresponding to a portion where the heating resistor 3 is provided.
- the heating resistor 3 is provided on the bottom surface of the groove portion 21, and the heating resistor 3 and the groove portion 21 have the same shape when seen in a plan view.
- the “similar shape” means that the length direction (axial direction) of the pattern of the heating resistor 3 and the length direction (axial direction) of the groove 21 are aligned, and the size in the width direction is sufficient. (Width) may be different. Specifically, for example, as shown in FIG. 4, the groove 21 may be formed wider than the heating resistor 3.
- the opening of the groove portion 21 is formed wider than the bottom surface of the groove portion 21, and the entire bottom surface of the groove portion 21 is formed.
- the heating resistor 3 may be formed. Further, the heating resistor 3 is formed only on the center side in the width direction of the groove portion 21, and the heating resistor 3 may not be formed at the corner (end side in the width direction) of the groove portion 21.
- the thickness of the heating resistor 3 may be smaller than the depth of the groove 21.
- the surface of the heating resistor 3 can be positioned inside the groove portion 21 with respect to the opening of the groove portion 21.
- the heat generated from the heating resistor 3 is transferred to the upper surface of the second ceramic substrate 2.
- heat can be diffused in the surface direction.
- a gap may be provided between the surface of the heating resistor 3 and the adhesive layer 5.
- the heat generated from the heating resistor 3 is more easily transmitted to the second ceramic substrate 2, so that the heat uniformity on the upper surface of the second ceramic substrate 2 can be further improved.
- the thermal uniformity on the heating surface 10 can be further improved.
- the heating resistor 3 may be provided on the bottom surface of the groove 21, and a part of the heating resistor 3 may be located outside the groove 21. Thereby, since the thickness of the heating resistor 3 can be increased, the risk of disconnection or the like can be reduced. In addition, since the heating resistor 3 is provided on the bottom surface of the groove portion 21, the heat generated from the heating resistor 3 can be easily diffused in the surface direction in the second ceramic substrate 2. As a result, the thermal uniformity on the upper surface of the second ceramic substrate 2 can be improved while improving the long-term reliability of the heating resistor 3, so that the thermal uniformity on the heating surface 10 from which heat is transferred can be further improved.
- the heating resistor 3 is provided in the groove portion 21, and the thickness of the heating resistor 3 is reduced toward the center in the width direction of the groove portion 21. May be.
- the long-term reliability of the heater 100 under a heat cycle can be improved.
- the heating resistor 3 when the heating resistor 3 is thermally expanded under a heat cycle, the heating resistor 3 can be easily thermally expanded to the center side by reducing the thickness on the center side. In general, thermal stress under a heat cycle tends to concentrate on the corners (portions formed by the bottom surface and the wall surface) of the groove portion 21 of the second ceramic substrate 2.
- the thickness on the center side of the heating resistor 3 can be set to, for example, 50 to 95% of the thickness on the end side in the width direction.
- the width of the groove portion 21 may increase from the bottom surface toward the opening. Thereby, when the heating resistor 3 formed on the bottom surface of the groove portion 21 is thermally expanded, the heating resistor 3 is easily thermally expanded toward the opening side. Therefore, the thermal stress generated between the second ceramic substrate 2 and the heating resistor 3 can be reduced.
- the width at the opening of the groove 21 can be set to 1.01 to 1.5 times the width at the bottom of the groove 21, for example.
- the following methods may be mentioned.
- a resinous mask is applied to the entire surface of the second ceramic substrate 2.
- the ceramic substrate 2 is fixed in a sandblasting apparatus, and powder such as silicon carbide is sprayed from the nozzle as a medium onto the surface of the second ceramic substrate 2.
- the resinous mask is designed so that only the portion covering the portion where the groove 21 is to be formed is torn by the collision of the media.
- the groove portion 21 having a predetermined depth can be provided on the surface of the second ceramic substrate 2.
- first ceramic substrate 10 heating surface 2: second ceramic substrate 21: groove portion 3: heating resistor 4: temperature sensor 5: adhesive layer 100: heater
Abstract
Description
10:加熱面
2:第2セラミック基板
21:溝部
3:発熱抵抗体
4:温度センサー
5:接着層
100:ヒータ
Claims (6)
- 一方の主面に加熱面を有する第1セラミック基板と、該第1セラミック基板の他方の主面を一方の主面で覆うように設けられた第2セラミック基板と、前記第2セラミック基板の前記一方の主面に設けられた発熱抵抗体と、前記第1セラミック基板と前記第2セラミック基板とを前記発熱抵抗体を覆って接着する接着層とを備えているヒータ。
- 前記第2セラミック基板の前記一方の主面が溝部を有するとともに、前記発熱抵抗体が前記溝部の底面に前記溝部の形状に沿って設けられている請求項1に記載のヒータ。
- 前記発熱抵抗体の厚みが、前記溝部の深さよりも小さい請求項2に記載のヒータ。
- 前記発熱抵抗体と前記接着層との間に隙間がある請求項3に記載のヒータ。
- 前記発熱抵抗体の厚みが、前記溝部の幅方向において、中心側に向かうに連れて厚みが小さくなっている請求項3または請求項4に記載のヒータ。
- 前記第1セラミック基板の内部に温度センサーをさらに備えた請求項1乃至請求項5のいずれかに記載のヒータ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020187012836A KR102041208B1 (ko) | 2015-11-12 | 2016-09-29 | 히터 |
CN201680064339.5A CN108353469B (zh) | 2015-11-12 | 2016-09-29 | 加热器 |
JP2017550026A JP6643353B2 (ja) | 2015-11-12 | 2016-09-29 | ヒータ |
US15/775,156 US11116046B2 (en) | 2015-11-12 | 2016-09-29 | Heater |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015222074 | 2015-11-12 | ||
JP2015-222074 | 2015-11-12 |
Publications (1)
Publication Number | Publication Date |
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WO2017081951A1 true WO2017081951A1 (ja) | 2017-05-18 |
Family
ID=58694984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2016/078892 WO2017081951A1 (ja) | 2015-11-12 | 2016-09-29 | ヒータ |
Country Status (5)
Country | Link |
---|---|
US (1) | US11116046B2 (ja) |
JP (1) | JP6643353B2 (ja) |
KR (1) | KR102041208B1 (ja) |
CN (1) | CN108353469B (ja) |
WO (1) | WO2017081951A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111602464A (zh) * | 2017-11-21 | 2020-08-28 | 沃特洛电气制造公司 | 集成式加热器和制造方法 |
WO2021039497A1 (ja) * | 2019-08-29 | 2021-03-04 | 京セラ株式会社 | 基体構造体及び基体構造体を用いた対象物載置装置 |
US11751289B2 (en) | 2017-11-21 | 2023-09-05 | Watlow Electric Manufacturing Company | Integrated heater and method of manufacture |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102111109B1 (ko) * | 2017-02-21 | 2020-05-14 | 엘지전자 주식회사 | 면상 발열장치, 이를 포함하는 전기 레인지 및 그 제조방법 |
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2016
- 2016-09-29 WO PCT/JP2016/078892 patent/WO2017081951A1/ja active Application Filing
- 2016-09-29 KR KR1020187012836A patent/KR102041208B1/ko active IP Right Grant
- 2016-09-29 CN CN201680064339.5A patent/CN108353469B/zh active Active
- 2016-09-29 JP JP2017550026A patent/JP6643353B2/ja active Active
- 2016-09-29 US US15/775,156 patent/US11116046B2/en active Active
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CN111602464B (zh) * | 2017-11-21 | 2023-01-24 | 沃特洛电气制造公司 | 集成式加热器和制造方法 |
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JPWO2021039497A1 (ja) * | 2019-08-29 | 2021-03-04 |
Also Published As
Publication number | Publication date |
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CN108353469B (zh) | 2021-01-22 |
JP6643353B2 (ja) | 2020-02-12 |
JPWO2017081951A1 (ja) | 2018-08-30 |
KR20180066149A (ko) | 2018-06-18 |
CN108353469A (zh) | 2018-07-31 |
US11116046B2 (en) | 2021-09-07 |
US20180332669A1 (en) | 2018-11-15 |
KR102041208B1 (ko) | 2019-11-06 |
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