WO2016189432A1 - Touch panel - Google Patents

Touch panel Download PDF

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Publication number
WO2016189432A1
WO2016189432A1 PCT/IB2016/052926 IB2016052926W WO2016189432A1 WO 2016189432 A1 WO2016189432 A1 WO 2016189432A1 IB 2016052926 W IB2016052926 W IB 2016052926W WO 2016189432 A1 WO2016189432 A1 WO 2016189432A1
Authority
WO
WIPO (PCT)
Prior art keywords
wiring
substrate
layer
touch panel
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2016/052926
Other languages
English (en)
French (fr)
Inventor
Hideaki Shishido
Daisuke Kubota
Yusuke Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN201680030074.7A priority Critical patent/CN107801414A/zh
Priority to CN202411376019.6A priority patent/CN119225560A/zh
Publication of WO2016189432A1 publication Critical patent/WO2016189432A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • G06F3/041662—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving using alternate mutual and self-capacitive scanning
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    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0448—Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
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    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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    • G06F2203/04106—Multi-sensing digitiser, i.e. digitiser using at least two different sensing technologies simultaneously or alternatively, e.g. for detecting pen and finger, for saving power or for improving position detection
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    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • G—PHYSICS
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    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Definitions

  • One embodiment of the present invention relates to an input device.
  • One embodiment of the present invention relates to a display device.
  • One embodiment of the present invention relates to an input/output device.
  • One embodiment of the present invention relates to a touch panel.
  • one embodiment of the present invention is not limited to the above technical field.
  • Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device, an input/output device, a driving method thereof, and a manufacturing method thereof.
  • a semiconductor device generally means a device that can function by utilizing semiconductor characteristics.
  • a semiconductor element such as a transistor, a semiconductor circuit, an arithmetic device, and a memory device are each an embodiment of a semiconductor device.
  • An imaging device, a display device, a liquid crystal display device, a light-emitting device, an input device, an input/output device, an electro-optical device, a power generation device (including a thin film solar cell, an organic thin film solar cell, and the like), and an electronic device may each include a semiconductor device.
  • a display device provided with a touch sensor as a position-input device has been in practical use.
  • a display device provided with a touch sensor is called a touch panel, a touch screen, or the like.
  • Examples of a portable information terminal provided with a touch panel are a smartphone and a tablet terminal.
  • liquid crystal display devices there is a liquid crystal display device provided with a liquid crystal element.
  • a liquid crystal display device provided with a liquid crystal element.
  • an active matrix liquid crystal display device in which pixel electrodes are arranged in a matrix and transistors are used as switching elements connected to respective pixel electrodes, has attracted attention.
  • an active matrix liquid crystal display device including transistors, in which metal oxide is used for a channel formation region, as switching elements connected to respective pixel electrodes is already known (Patent Documents 1 and 2).
  • a liquid crystal display device is classified into two major types: transmissive type and reflective type.
  • a backlight such as a cold cathode fluorescent lamp or an LED is used, and a state in which light from the backlight is transmitted through liquid crystal and output to the outside of the liquid crystal display device or a state in which light is not output is selected using optical modulation action of liquid crystal, whereby bright and dark images are displayed. Furthermore, those displays are combined to display an image.
  • a state in which external light, that is, incident light is reflected at a pixel electrode and output to the outside of the device or a state in which incident light is not output to the outside of the device is selected using optical modulation action of liquid crystal, whereby bright and dark images are displayed. Furthermore, those displays are combined to display an image.
  • Examples of the display device include a light-emitting device including a light-emitting element such as an organic electroluminescent (EL) element or a light-emitting diode (LED), and an electronic paper performing display by an electrophoretic method or the like.
  • a light-emitting device including a light-emitting element such as an organic electroluminescent (EL) element or a light-emitting diode (LED), and an electronic paper performing display by an electrophoretic method or the like.
  • EL organic electroluminescent
  • LED light-emitting diode
  • Patent Document 3 discloses a flexible light-emitting device in which an organic EL element is used.
  • Patent Document 1 Japanese Published Patent Application No. 2007-123861
  • Patent Document 2 Japanese Published Patent Application No. 2007-096055
  • Patent Document 3 Japanese Published Patent Application No. 2014-197522 DISCLOSURE OF INVENTION
  • a touch panel in which a display panel is provided with a function of inputting data with a finger, a stylus, or the like touching a screen as a user interface.
  • a substrate provided with a touch sensor can be attached to the display surface side of a display panel.
  • the thickness of the touch panel cannot be reduced and the number of components is increased.
  • One object of one embodiment of the present invention is to provide a thin touch panel.
  • Another object is to provide a touch panel having a simple structure. Another object is to provide a touch panel which can be easily incorporated into an electronic device. Another object is to provide a touch panel with a small number of components. Another object is to provide a lightweight touch panel. Another object is to provide a touch panel with high detection sensitivity.
  • Another object is to provide a novel input device. Another object is to provide a novel input device, a novel output device, a novel input/output device, or the like. Note that the description of these objects does not disturb the existence of other objects. In one embodiment of the present invention, there is no need to achieve all the objects. Other objects can be derived from the description of the specification, the drawings, the claims, and the like.
  • One embodiment of the present invention is a touch panel including a display portion, a signal line, a scan line, a first wiring, and a second wiring.
  • the display portion includes a plurality of pixel electrodes. The plurality of pixel electrodes are arranged in a first direction and a second direction intersecting the first direction in a matrix.
  • the signal line extends in the first direction.
  • the scan line extends in the second direction.
  • the first wiring extends in the first direction.
  • the second wiring extends in the second direction.
  • the first wiring includes a first portion parallel to the signal line, and the first portion is between two pixel electrodes adjacent in the second direction in a plan view.
  • the second wiring includes a second portion parallel to the scan line, and the second portion is between two pixel electrodes adjacent in the first direction in a plan view.
  • the first wiring do not intersect the signal line in a portion overlapping with the display portion and the second wiring do not intersect the scan line in a portion overlapping with the display portion.
  • the signal line and the first wiring be formed by processing the same conductive film and the scan line and the second wiring be formed by processing the same conductive film.
  • the first wiring be formed by processing the same conductive film as the signal line
  • the second wiring include a third portion formed by processing the same conductive film as the signal line and a fourth portion formed by processing the same conductive film as the scan line.
  • the fourth portion preferably intersects the signal line or the first wiring.
  • the second wiring be formed by processing the same conductive film as the scan line and the first wiring include a fifth portion formed by processing the same conductive film as the signal line and a sixth portion formed by processing the same conductive film as the scan line.
  • the fifth portion preferably intersects the scan line or the second wiring.
  • the first wiring preferably includes a seventh portion parallel to the scan line and intersecting the signal line.
  • the seventh portion is preferably between two pixel electrodes adjacent in the first direction.
  • the second wiring preferably includes an eighth portion parallel to the signal line and intersecting the scan line. The eighth portion is preferably between two pixel electrodes adjacent in the second direction.
  • the first wiring preferably has a mesh shape surrounding one or more of the pixel electrodes in a plan view.
  • the second wiring preferably has a mesh shape surrounding another one or more of the pixel electrodes in a plan view.
  • the first portion of the first wiring, the eighth portion of the second wiring, and the signal line are preferably formed by processing the same conductive film.
  • the seventh portion of the first wiring, the second portion of the second wiring, and the scan line are preferably formed by processing the same conductive film.
  • one of the first wiring and the second wiring is preferably formed by processing the same conductive film as the scan line or the signal line.
  • the other of the first wiring and the second wiring is preferably formed by processing a conductive film different from the scan line and the signal line. In that case, the other of the first wiring and the second wiring is preferably formed by processing the same conductive film as the pixel electrode.
  • the first wiring is preferably formed by processing a conductive film different from the scan line and the signal line.
  • the second wiring is preferably formed by processing a conductive film different from the scan line and the signal line.
  • the first wiring or the second wiring, or the first wiring and the second wiring are preferably formed by processing the same conductive film as the pixel electrode.
  • the touch panel preferably includes a liquid crystal element including a pixel electrode, a liquid crystal, and a common electrode.
  • the touch panel preferably includes a first substrate, a second substrate, a first polarizing plate, a second polarizing plate, and a backlight.
  • the backlight, the first polarizing plate, the first substrate, the second substrate, and the second polarizing plate are preferably stacked in this order.
  • the signal line, the scan line, the first wiring, the second wiring, and the pixel electrode are preferably provided on the second substrate side of the first substrate.
  • the touch panel preferably includes a light-emitting element including a pixel electrode, an EL layer, and a common electrode.
  • the touch panel preferably includes a first substrate, a second substrate, and a polarizing plate.
  • the polarizing plate, the first substrate, and the second substrate are preferably stacked in this order.
  • the signal line, the scan line, the first wiring, the second wiring, and the pixel electrode are preferably provided on the second substrate side of the first substrate.
  • a display panel has a function of displaying or outputting an image or the like on or to a display surface.
  • the display panel is one embodiment of an output device.
  • a structure in which a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) is attached to a substrate of a display panel, or a structure in which an integrated circuit (IC) is mounted on a substrate by a chip on glass (COG) method is referred to as a display panel module or a display module, or simply referred to as a display panel or the like in some cases.
  • a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) is attached to a substrate of a display panel
  • IC integrated circuit
  • COG chip on glass
  • a touch sensor has a function of sensing the contact or approach of an object such as a finger or a stylus. Therefore, the touch sensor is one embodiment of an output device.
  • a substrate including a touch sensor is referred to as a touch sensor panel or simply referred to as a touch sensor or the like in some cases.
  • a structure in which a connector such as an FPC or a TCP is attached to a substrate of a touch sensor panel, or a structure in which an integrated circuit (IC) is mounted on a substrate by a COG method is referred to as a touch sensor panel module, a touch sensor module, or a sensor module, or simply referred to as a touch sensor or the like in some cases.
  • a touch panel has a function of displaying or outputting an image or the like on or to a display surface and a function as a touch sensor capable of detecting the contact or approach of an object such as a finger or a stylus on or to the display surface. Therefore, the touch panel is an embodiment of an input/output device.
  • a touch panel can be referred to, for example, a display panel (or display device) with a touch sensor or a display panel (or display device) having a touch sensor function.
  • a touch panel can include a display panel and a touch sensor panel.
  • a touch panel can have a function of a touch sensor inside a display panel.
  • a structure in which a connector such as an FPC or a TCP is attached to a substrate of a touch panel, or a structure in which an integrated circuit (IC) is mounted on a substrate by a COG method is referred to as a touch panel module, a display module, or simply referred to as a touch panel or the like in some cases.
  • a thin touch panel can be provided.
  • a touch panel with a simple structure can be provided.
  • a touch panel which can be easily incorporated into an electronic device can be provided.
  • a touch panel with a small number of components can be provided.
  • a lightweight touch panel can be provided.
  • FIGS. 1 A and IB show a structure example of a touch panel module of an embodiment.
  • FIGS. 2A to 2C each show a structure example of a touch panel module of an embodiment.
  • FIGS. 3A to 3C each show a structure example of a touch panel module of an embodiment.
  • FIGS. 4A to 4C each show a structure example of a touch panel module of an embodiment.
  • FIGS. 5A to 5C each show a structure example of a touch panel module of an embodiment.
  • FIGS. 6A and 6B each illustrate structural examples of wirings of an embodiment.
  • FIGS. 7A and 7B each illustrate structural examples of wirings of an embodiment.
  • FIG. 8 shows a structure example of a touch panel module of an embodiment.
  • FIGS. 9A and 9B each show a structure example of a touch panel module of an embodiment.
  • FIGS. 10A and 10B each show a structure example of a touch panel module of an embodiment.
  • FIGS. 11A and 11B each show a structure example of a touch panel module of an embodiment.
  • FIGS. 12A and 12B each show a structure example of a touch panel module of an embodiment.
  • FIG. 13 shows a structure example of a touch panel module of an embodiment.
  • FIGS. 14A and 14B each show a structure example of a touch panel module of an embodiment.
  • FIGS. 15A and 15B each show a structure example of a touch panel module of an embodiment.
  • FIG. 16 shows a structure example of a touch panel module of an embodiment.
  • FIG. 17 shows a structure example of a touch panel module of an embodiment.
  • FIGS. 18A and 18B each show a structure example of a pixel of an embodiment.
  • FIG. 19 shows a structure example of a pixel of an embodiment.
  • FIG. 20 shows a structure example of a pixel of an embodiment.
  • FIG. 21 shows a structure example of a touch panel module of an embodiment.
  • FIGS. 22A and 22B each show a structure example of a touch panel module of an embodiment.
  • FIG. 23 shows a structure example of a touch panel module of an embodiment.
  • FIGS. 24A and 24B each show a structure example of a touch panel module of an embodiment.
  • FIGS. 25A and 25B each show a structure example of a touch panel module of an embodiment.
  • FIG. 26 shows a structure example of a touch panel module of an embodiment.
  • FIGS. 27A and 27B each show a structure example of a touch panel module of an embodiment.
  • FIGS. 28A and 28B each show a structure example of a touch panel module of an embodiment.
  • FIG. 29 shows a configuration example of a circuit of an embodiment.
  • FIG. 30 shows a configuration example of a circuit of an embodiment.
  • FIG. 31 shows a structure example of a touch panel module of an embodiment.
  • FIG. 32 shows a structure example of a touch panel module of an embodiment.
  • FIG. 33 shows a structure example of a touch panel module of an embodiment.
  • FIG. 34 shows a structure example of a touch panel module of an embodiment.
  • FIG. 35 shows a structure example of a touch panel module of an embodiment.
  • FIG. 36 shows a structure example of a touch panel module of an embodiment.
  • FIG. 37 shows a structure example of a touch panel module of an embodiment.
  • FIG. 38 shows a structure example of a touch panel module of an embodiment.
  • FIG. 39 shows a structure example of a touch panel module of an embodiment.
  • FIG. 40 shows a structure example of a touch panel module of an embodiment.
  • FIG. 41 shows a structure example of a touch panel module of an embodiment.
  • FIG. 42 shows a structure example of a touch panel module of an embodiment.
  • FIGS. 43 A and 43B are a circuit diagram and a timing chart of a touch sensor of an embodiment.
  • FIGS. 44A1, 44A2, 44B1, 44B2, 44C1, and 44C2 are cross-sectional views each illustrating an embodiment of a transistor.
  • FIGS. 45A1, 45A2, 45A3, 45B1, and 45B2 are cross-sectional views each illustrating an embodiment of a transistor.
  • FIGS. 46A1, 46A2, 46A3, 46B1, 46B2, 46C1, and 46C2 are cross-sectional views each illustrating an embodiment of a transistor.
  • FIG. 47 is a block diagram of a touch panel module of an embodiment.
  • FIGS. 48A to 48C each show a structure example of a touch panel module of an embodiment.
  • FIG. 49 illustrates a display module of an embodiment.
  • FIGS. 50A to 50H each illustrate an electronic device of an embodiment.
  • FIGS. 51 A and 5 IB each illustrate an electronic device of an embodiment.
  • FIGS. 52A, 52B, 52C1, 52C2, 52D, 52E, 52F, 52G, and 52H each illustrate an electronic device of an embodiment.
  • FIGS. 53A1, 53A2, 53B, 53C, 53D, 53E, 53F, 53G, 53H, and 531 each illustrate an electronic device of an embodiment.
  • FIGS. 54A to 54E illustrate electronic devices of embodiments.
  • FIG. 55 shows measured XRD spectra of samples.
  • FIGS. 56A and 56B are TEM images of samples and FIGS. 56C to 56L are electron diffraction patterns thereof.
  • FIGS. 57A to 57C show EDX mapping images of a sample.
  • Examples of the capacitive touch sensor are a surface capacitive touch sensor and a projected capacitive touch sensor.
  • Examples of a projected capacitive touch sensor are a self-capacitive touch sensor and a mutual capacitive touch sensor. The use of a mutual capacitive touch sensor is preferable because multiple points can be detected simultaneously.
  • the touch sensor that can be used for the touch panel of one embodiment of the present invention includes a pair of conductive layers. Capacitive coupling is generated in the pair of conductive layers. The capacitance of the pair of conductive layers changes when an object touches or approaches the pair of conductive layers. Utilizing this effect, detection can be conducted.
  • the touch panel of one embodiment of the present invention includes pixels arranged in a matrix, a plurality of signal lines, and a plurality of scan lines.
  • the pixel includes a pixel electrode.
  • the signal lines and the scan lines are provided to extend in directions intersecting each other.
  • a direction in which the signal lines extend is referred to as a first direction or an X direction
  • a direction in which the scan lines extend is referred to as a second direction or a Y direction. It is acceptable as long as the first direction and the second direction intersect each other; however, they are preferably orthogonal to each other.
  • the touch panel of one embodiment of the present invention includes a plurality of first wirings extending in the first direction and a plurality of second wirings extending in the second direction. Part of the first wiring and part of the second wiring function as a pair of electrodes included in the touch sensor. In other words, capacitive coupling occurs between the first wiring and the second wiring.
  • a layer, a wiring, a structure, or the like extends in a direction
  • the layer, the wiring, the structure, or the like is provided to extend in the direction.
  • the layer, the wiring, the structure, or the like may have a long extending shape in the direction, and may partly have a portion extending in a direction different from the direction.
  • the first wiring and the second wiring each can be provided between two adjacent pixel electrodes in a plan view. In this case, part of the first wiring and part of the second wiring may overlap with the pixel electrode.
  • the pair of wirings included in the touch sensor are provided in a region other than an optical path of light from a display element; thus, moire is not generated in principle.
  • moire means interference fringes generated in the case where two or more regular patterns overlap with each other. As a result, a touch panel having extremely high display quality can be obtained.
  • a light-blocking layer or a circularly polarizing plate be provided closer to the display surface side than the pair of wirings included in the touch sensor are. This can reduce or prevent reflection of external light caused by the pair of wirings, and the pair of wirings are less likely to be recognized by a user.
  • the first wiring and the second wiring each can have a shape extending in the first direction or the second direction in the form of stripes.
  • some of the plurality of first wirings are electrically connected to each other in a region outside the display portion that displays an image to form a group.
  • some of the plurality of second wirings are electrically connected to each other in a region outside the display portion to form a group.
  • the first wiring and the second wiring each can have a mesh shape including portions parallel to the first direction and the second direction.
  • one or more pixel electrodes can be provided in an opening of the mesh in a plan view.
  • the conductivity in the extending directions can be increased, so that delay of signals can be suppressed; thus, the detection sensitivity can be increased.
  • the first wiring and the second wiring are preferably formed by processing the same film as a wiring, an electrode, a semiconductor, or the like included in the pixel or the display element of the touch panel, a driver circuit, or the like.
  • a touch panel can be manufactured without providing a special step for adding a function of a touch sensor, which leads to a reduction in manufacturing cost.
  • the first wiring and the second wiring each have a stripe shape as described above
  • the first wiring can be formed by processing the same conductive film as the signal line and the second wiring can be formed by processing the same conductive film as the scan line.
  • the first wiring and the second wiring can be formed over different insulating layers, so that the first wiring and the second wiring can intersect each other without a special contrivance. Since the first wiring and the scan line are formed over different insulating layers and the second wiring and the signal line are formed over different insulating layers in that case, the first wiring and the scan line, or the second wiring and the signal line can intersect each other without a special contrivance.
  • the mesh shape can be formed in such a manner that portions parallel to the first direction are formed by processing the same conductive film as the signal line and portions parallel to the second direction are formed by processing the same conductive film as the scan line and these two types of portions are electrically connected to each other.
  • arbitrary two of the first wiring, the second wiring, the signal line, and the scan line can intersect each other without a special contrivance.
  • first wiring and the second wiring are not limited thereto. Other examples are described later.
  • the first wiring and the second wiring are formed by processing the same film as a wiring, an electrode, a semiconductor layer, or the like included in the pixel or the display element of the touch panel, the driver circuit, or the like
  • the side of a substrate over which the first wiring and the second wiring are formed also referred to as a first substrate or an element substrate
  • the first wiring and the second wiring can be close to the touch surface; thus, higher sensitivity can be preferably obtained.
  • the first substrate side of the touch panel functions as a display surface.
  • a transmissive liquid crystal display device for example, a polarizing plate and a backlight can be provided outside a substrate which is provided to face the first substrate and seals liquid crystal (also referred to as a second substrate or a counter substrate) and a polarizing plate can be provided outside the first substrate.
  • a bottom emission light-emitting element can be used as the display element, for example.
  • FIG. 1A is a schematic perspective view of a touch panel module 10 of one embodiment of the present invention.
  • a substrate 21 and a substrate 31 are attached to each other.
  • FIG. IB illustrates a structure of the substrate 21, and the substrate 31 is denoted by a broken line.
  • a display portion 32 including a plurality of pixel circuits, a circuit 34, a wiring 35, and the like are provided over the substrate 21.
  • An IC 43 and an FPC 42 are mounted over the substrate 31.
  • FIG. IB is an enlarged view of part of the display portion 32.
  • the display portion 32 includes a plurality of signal lines 51 extending in the X direction, a plurality of scan lines 52 extending in the Y direction, and a plurality of pixel electrodes 36 arranged in the X direction and the Y direction in a matrix. Furthermore, a plurality of wirings 23 extending in the X direction and a plurality of wirings 24 extending in the Y direction are provided in the display portion 32.
  • the wiring 23 includes a portion parallel to the signal line 51 and the wiring 24 includes a portion parallel to the scan line 52.
  • the wiring 23 and the wiring 24 function as a pair of electrodes included in the touch sensor.
  • the touch panel module 10 of one embodiment of the present invention includes a pair of wirings functioning as electrodes of the touch sensor over a substrate over which the pixel electrode 36, the signal line 51, the scan line 52, and the like are provided.
  • the pair of wirings of the touch sensor can be formed through the same steps as the pixel electrode 36, the signal line 51, the scan line 52, or the like which are used to display an image, so that manufacturing cost can be reduced.
  • Capacitive coupling occurs between the wiring 23 and the wiring 24.
  • one of the wirings 23 and 24 can be used as a transmission-side wiring (electrode), and the other thereof can be used as a reception- side wiring (electrode).
  • each of the wiring 23 and the wiring 24 can serve as both a transmission wiring and a reception wiring.
  • the wiring 23 and the wiring 24 are preferably formed by processing the same film as the signal line 51, the scan line 52, the pixel electrode 36, or a wiring, an electrode, a semiconductor, or the like provided in the display portion 32, for example.
  • a low-resistance material is preferably used as a material of the wirings 23 and 24.
  • metal such as silver, copper, or aluminum may be used.
  • a metal nanowire including a number of conductors with an extremely small width for example, a diameter of several nanometers
  • examples of such a metal nanowire include an Ag nanowire, a Cu nanowire, and an Al nanowire.
  • light transmittance of 89 % or more and a sheet resistance of 40 ohm/square or more and 100 ohm/square or less can be achieved.
  • the metal nanowire may be used for an electrode of the display element, e.g., a pixel electrode or a common electrode.
  • conductive oxide can be used for at least one of the wiring 23 and the wiring 24.
  • a conductive material containing indium oxide, tin oxide, or zinc oxide may be used.
  • the wiring and a display element may be provided to overlap with each other and light from the display element may be emitted through the wiring.
  • the wiring may be provided to overlap with the pixel electrode 36.
  • a display element in which the pixel electrode 36 is used as an electrode can be applied to the display portion 32.
  • a light-emitting element such as a transmissive liquid crystal display element or an organic EL element can be preferably used as the display element.
  • the display element is not limited thereto, and a variety of elements can be used.
  • Examples of the display element include reflective or semi-transmissive liquid crystal elements; display elements (electronic ink) that perform display by an electrophoretic method, an electronic liquid powder (registered trademark) method, or the like; MEMS shutter display elements; and optical interference type MEMS display elements.
  • a pixel included in the display portion 32 may include a pixel circuit in addition to the display element.
  • the pixel circuit may have a transistor, a capacitor, a wiring that electrically connects the transistor and the capacitor, and the like, for example.
  • FIG. 2A is a schematic cross-sectional view of part of the display portion 32.
  • FIG. 2A illustrates an example of one pixel, the wiring 23, and the wiring 24.
  • a liquid crystal element is used as a display element provided in the pixel is shown.
  • the substrate 21 and the substrate 31 are attached to each other with an adhesive layer or the like in a peripheral portion. Furthermore, a liquid crystal 37 is sealed between the substrate 21 and the substrate 31.
  • a transistor 70, the pixel electrode 36, the wiring 23, the wiring 24, and the like are provided over the substrate 21.
  • a coloring layer 65, a light-blocking layer 66, a common electrode 38, and the like are provided on the side of a surface of the substrate 31 which faces the substrate 21.
  • the transistor 70 includes a conductive layer 71 functioning as a gate, a semiconductor layer 72, an insulating layer 73 functioning as a gate insulating layer, a conductive layer 74a functioning as one of a source and a drain, a conductive layer 74b functioning as the other of the source and the drain, and the like.
  • the conductive layer 74a is part of the signal line 51 and the conductive layer 71 is part of the scan line 52.
  • the liquid crystal element 60 includes the pixel electrode 36, the common electrode 38, and the liquid crystal 37 sandwiched therebetween.
  • the liquid crystal element 60 is a transmissive liquid crystal element using a vertical alignment (VA) mode.
  • a pair of electrodes are provided in the thickness direction of the touch panel module 10 and an electric field is applied to the liquid crystal 37 in the thickness direction.
  • the arrangement of the electrodes is not limited thereto, and a method in which an electric field is applied in a direction perpendicular to the thickness direction may be employed.
  • a normally black liquid crystal display device for example, a transmissive liquid crystal display device using a vertical alignment (VA) mode can be used as the touch panel module 10.
  • VA vertical alignment
  • the vertical alignment mode include a multi-domain vertical alignment (MVA) mode, a patterned vertical alignment (PVA) mode, and an advanced super view (ASV) mode.
  • MVA multi-domain vertical alignment
  • PVA patterned vertical alignment
  • ASV advanced super view
  • Liquid crystal elements using a variety of modes can be used as the liquid crystal element 60.
  • a liquid crystal element using, instead of a VA mode, a twisted nematic (TN) mode, an in-plane switching (IPS) mode, a fringe field switching (FFS) mode, an axially symmetric aligned micro-cell (ASM) mode, an optically compensated birefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, or the like can be used.
  • the liquid crystal element controls transmission or non-transmission of light utilizing an optical modulation action of liquid crystal.
  • optical modulation action of liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field).
  • thermotropic liquid crystal low-molecular liquid crystal, high-molecular liquid crystal, polymer dispersed liquid crystal (PDLC), ferroelectric liquid crystal, anti-ferroelectric liquid crystal, or the like can be used.
  • PDLC polymer dispersed liquid crystal
  • ferroelectric liquid crystal anti-ferroelectric liquid crystal, or the like
  • These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like depending on conditions.
  • liquid crystal material either of a positive liquid crystal and a negative liquid crystal may be used, and an appropriate liquid crystal material can be used depending on the mode or design to be used.
  • FIG. 2 A illustrates an example where the wiring 24 and the conductive layer 71 are formed by processing the same conductive film and provided on the same surface. Furthermore, the wiring 23, the conductive layer 74a, and the conductive layer 74b are formed by processing the same conductive film and provided on the same surface.
  • the wiring 23 is formed over the insulating layer 73, and the wiring 24 is formed over the substrate 21 having an insulating property. Since the insulating layer 73 is provided between the wiring 23 and the wiring 24, the wirings 23 and 24 can intersect each other without a special contrivance.
  • capacitive coupling occurs between the wiring 23 and the wiring 24.
  • one of the wirings 23 and 24 can be used as a transmission-side electrode, and the other thereof can be used as a reception- side electrode.
  • a polarizing plate 61 and a polarizing plate 62 are provided so that the substrate 21 and the substrate 31 are sandwiched therebetween.
  • a backlight 63 is provided outside the polarizing plate 62. Thus, light enters from the backlight in a direction shown by an arrow in FIG. 2A, and the substrate 21 side functions as the display surface side.
  • a direct-below backlight or an edge-light backlight may be used.
  • a direct-below backlight including a light-emitting diode (LED) When used, local dimming is easily performed; thus, contrast can be preferably increased.
  • an edge-light type backlight is used, the thickness of a touch panel module including the backlight can be preferably reduced.
  • polarizing plate 61 on the display surface side a linear polarizing plate or a circularly polarizing plate can be used.
  • circularly polarizing plate for example, a stack including a linear polarizing plate and a quarter-wave retardation plate can be used.
  • FIGS. 2 A to 2C in the case where the wiring 23 and the wiring 24 included in the touch sensor are provided on the substrate 21 side, external light is reflected by the wirings and the reflected light is visually recognized in some cases. In this case, reflection can be suppressed with a circularly polarizing plate used as the polarizing plate 61.
  • a circularly polarizing plate may be also used as the polarizing plate 62 and a general linear polarizing plate may be used.
  • the cell gap, alignment, driving voltage, and the like of the liquid crystal element 60 are controlled depending on the kinds of polarizing plates used as the polarizing plates 61 and 62 so that desirable contrast is obtained.
  • the coloring layer 65 can also be referred to as a color filter, and converts light of the backlight 63 into light exhibiting a specific color.
  • the coloring layer 65 of red, green, or blue is provided as a coloring layer in each pixel (sub-pixel); thus, full-color display can be performed.
  • a pixel (sub-pixel) corresponding to yellow, white, or the like in addition to the three colors is provided, power consumption can be reduced, which is preferable.
  • a transmissive liquid crystal element is used as the liquid crystal element 60
  • a light-transmitting conductive film can be used as the pixel electrode 36 and the common electrode 38.
  • a light-reflecting material can be used for the pixel electrode 36 or the common electrode 38.
  • the pixel electrode 36 and the common electrode 38 have a function of transmitting visible light.
  • the liquid crystal element 60 can be a transmissive liquid crystal element.
  • the backlight 63 is positioned on the substrate 31 side
  • light from the backlight 63 which is polarized by the polarizing plate 62 passes through the substrate 31, the common electrode 38, the liquid crystal 37, the pixel electrode 36, the substrate 21, and the like, and then reaches the polarizing plate 61.
  • alignment of the liquid crystal 37 is controlled with a voltage applied between the pixel electrode 36 and the common electrode 38, and thus, optical modulation of light can be controlled.
  • the intensity of light emitted through the polarizing plate 61 can be controlled.
  • Light other than one in a particular wavelength region of the incident light is absorbed by the coloring layer 65, and thus, emitted light has emission spectrum peak in the particular wavelength region.
  • light emitted through the polarizing plate 61 becomes light with red, green, or blue.
  • the transistor 70 be provided to overlap with the light-blocking layer 66 as illustrated in FIG. 2A.
  • the wiring 23 and the wiring 24 be provided to overlap with the light-blocking layer 66.
  • irregular reflection of light from the backlight 63 which is caused by the wiring 23 or the wiring 24 can be prevented, so that contrast of an image or a movie to be displayed can be increased.
  • FIG. 2B illustrates an example where both of the wirings 23 and 24 are formed by processing the same conductive film as the conductive layer 74a and the conductive layer 74b.
  • a bridge structure is formed in an intersection portion of the wiring 23 and the wiring 24 by using a conductive layer obtained by processing the same conductive film as the conductive layer 71, the pixel electrode 36, or the like so that the wirings 23 and 24 intersect each other.
  • the conductive layer may be provided to overlap with one of the wirings 23 and 24 and electrically connected to the other thereof.
  • FIG. 2C illustrates an example where both of the wirings 23 and 24 are formed by processing the same conductive film as the conductive layer 71.
  • a bridge structure is formed in an intersection portion of the wiring 23 and the wiring 24 by using a conductive layer obtained by processing the same conductive film as the conductive layer 74a, the pixel electrode 36, or the like.
  • transistor 70 is a bottom-gate transistor in each of FIGS. 2A to 2C, a top-gate transistor may be used.
  • FIG. 3 A illustrates an example where the transistor 70 is a top-gate transistor.
  • the transistor 70 in FIG. 3A includes the semiconductor layer 72, the insulating layer 73 covering the semiconductor layer 72, and the conductive layer 71 overlapping with part of the semiconductor layer 72.
  • the semiconductor layer 72 includes a pair of low-resistance regions 75 between which a region where a channel is formed (a region overlapping with the conductive layer 71) is interposed.
  • One of the low-resistance regions 75 functions as a source and the other thereof functions as a drain.
  • the conductive layer 74a and the conductive layer 74b are electrically connected to the respective low-resistance regions 75 through openings in the insulating layer 81.
  • an insulating layer 82 is provided to cover the conductive layer 74a and the conductive layer 74b, and the pixel electrode 36 is provided over the insulating layer 82.
  • the pixel electrode 36 is electrically connected to the conductive layer 74b through an opening in the insulating layer 82.
  • FIG. 3A illustrates an example where the wiring 23 is formed by processing the same conductive film as the conductive layers 74a and 74b and the wiring 24 is formed by processing the same conductive film as the conductive layer 71.
  • the wiring 23 is positioned over the insulating layer 81 and the wiring 24 is positioned over the insulating layer 73.
  • FIG. 3B illustrates an example where both of the wirings 23 and 24 are formed by processing the same conductive film as the conductive layer 71.
  • FIG. 3C illustrates an example where both of the wirings 23 and 24 are formed by processing the same conductive film as the conductive layer 74a and the conductive layer 74b.
  • the substrate 21 side functions as the display surface side; however, the substrate 31 side may function as the display surface side.
  • the backlight 63 is provided outside the polarizing plate 61.
  • a circularly polarizing plate may be used as the polarizing plate 61, or a circularly polarizing plate may be provided in addition to the polarizing plate 61.
  • the backlight 63 is provided outside the substrate 31 and the substrate 21 side functions as the display surface and the touch surface of the touch panel.
  • the substrate 21 side on which the wiring 23 and the wiring 24 are supported functions as the touch surface of the touch panel, the physical distance between an object and the wiring 23 or the wiring 24 can be short; thus, the detection sensitivity of the touch sensor can be increased.
  • the backlight 63 can be provided outside the substrate 21 and the substrate 31 side can function as the display surface and the touch surface of the touch panel.
  • FIG. 4A is a schematic cross-sectional view of part of the display portion 32.
  • FIG. 4A illustrates an example of one pixel, the wiring 23, and the wiring 24.
  • the substrate 21 side of the display portion 32 functions as the display surface side.
  • the substrate 21 and the substrate 31 are attached to each other with an adhesive layer 68.
  • the insulating layer 81 is provided to cover the transistor 70, and the pixel electrode 36 is provided over the insulating layer 81.
  • the pixel electrode 36 is electrically connected to the conductive layer 74b through an opening in the insulating layer 81.
  • the insulating layer 83 is provided over the insulating layer 81.
  • the insulating layer 83 includes an opening overlapping with the pixel electrode 36. Part of the insulating layer 83 is provided to cover an end portion of the pixel electrode 36.
  • An EL layer 47 and a common electrode 48 are stacked in this order over the insulating layer 83 and the pixel electrode 36.
  • the light-emitting element 40 includes the pixel electrode 36, the common electrode 48, and the EL layer 47 sandwiched therebetween.
  • the light-emitting element 40 in FIG. 4A is a bottom-emission light-emitting element in which light is emitted to the substrate 21 side on which the light-emitting element 40 is supported.
  • the pixel electrode 36 on the substrate 21 side has a function of transmitting visible light
  • the common electrode 48 on the substrate 31 side has a function of reflecting visible light.
  • the coloring layer 65 is provided in a position closer to the substrate 21 side than the light-emitting element 40 is.
  • the coloring layer 65 converts light from the light-emitting element 40 into light having a specific color.
  • the coloring layer 65 of red, green, or blue is provided as a coloring layer in each pixel (sub-pixel); thus, full-color display can be performed.
  • a pixel (sub-pixel) corresponding to yellow, white, or the like in addition to the three colors is provided, power consumption can be reduced, which is preferable.
  • the structure of the light-emitting element 40 is not limited thereto, and a top-emission light-emitting element or a dual-emission light-emitting element can be used.
  • the EL layer 47 of the light-emitting element 40 is separately fabricated in each pixel (sub-pixel), and thus, the light-emitting elements 40 exhibiting different colors may be separately fabricated in pixels (sub-pixels). In that case, the coloring layer 65 is not necessarily provided.
  • FIG. 4 A illustrates an example where the polarizing plate 61 is provided outside the substrate 21, i.e., on the display surface side.
  • a circularly polarizing plate can be preferably used as the polarizing plate 61.
  • the circularly polarizing plate used as the polarizing plate 61 can prevent reflection due to the wiring 23, the wiring 24, or the like.
  • FIG. 4B illustrates an example where both of the wirings 23 and 24 are formed by processing the same conductive film as the conductive layer 74a and the conductive layer 74b.
  • FIG. 4C illustrates an example where both of the wirings 23 and 24 are formed by processing the same conductive film as the conductive layer 71.
  • FIG. 5A illustrates an example where a top-gate transistor is used as the transistor 70.
  • FIG. 5B illustrates an example where both of the wirings 23 and 24 are formed by processing the same conductive film as the conductive layer 74a and the conductive layer 74b.
  • FIG. 5C illustrates an example where both of the wirings 23 and 24 are formed by processing the same conductive film as the conductive layer 71.
  • a bottom-emission light-emitting element is used as the light-emitting element 40 and the substrate 21 side functions as the display surface and the touch surface of the touch panel.
  • the substrate 21 side on which the wiring 23 and the wiring 24 are supported functions as the touch surface of the touch panel, the physical distance between an object and the wiring 23 or the wiring 24 can be short; thus, the detection sensitivity of the touch sensor can be increased.
  • a top-emission light-emitting element or a dual-emission light-emitting element can be used as the light-emitting element 40 and the substrate 31 side may function as the display surface and the touch surface of the touch panel.
  • FIG. 6A illustrates an example of top surface shapes of the wirings 23 and the wirings 24.
  • the wirings 23 extend in the X direction and the wirings 24 extend in the Y direction.
  • the wirings 23 each include a plurality of stripes extending in the X direction in a region overlapping with the display portion 32, and the plurality of stripes are connected to each other in a region outside the display portion 32.
  • the wiring 23 can be formed using only portions substantially parallel in the X direction and the wiring 24 can be formed using only portions substantially parallel in the Y direction in a portion overlapping with the display portion 32.
  • the wiring 23 can be arranged not to intersect the signal line 51 (not illustrated) extending in the X direction, they can be formed at the same time by processing the same conductive film.
  • the wiring 24 is arranged not to intersect the scan line 52 (not illustrated) extending in the Y direction and they can be formed using the same conductive film.
  • a conductive layer 26a extending in the X direction may be provided between the adjacent wirings 23.
  • a conductive layer 26b extending in the Y direction may be provided between the adjacent wirings 24.
  • the conductive layer 26a and the conductive layer 26b can be brought into an electrically floating state or supplied with a predetermined constant potential, for example.
  • a regular pattern in layout from a region where the wiring 23 and the wiring 24 are provided to a region where they are not provided can be maintained. Therefore, between a pixel close to the wiring 23 and the wiring 24 and a pixel far from them, luminance unevenness due to a thickness difference or the like of stacks included in the pixels can be suppressed.
  • a short-side direction of the display portion 32 is referred to as the X direction and a long-side direction of the display portion 32 is referred to as the Y direction in FIGS. 6A and 6B and the like; however, one embodiment of the present invention is not limited thereto, and the short-side direction and the long-side direction may be referred to as the Y direction and the X direction, respectively.
  • FIG. 7A illustrates an example of the wiring 23 and the wiring 24 having shapes different from those in FIG. 6A.
  • the wiring 23 and the wiring 24 each have portions parallel in the X direction and portions parallel in the Y direction, and a mesh-like top surface shape can be formed by these two types of portions.
  • the wiring 23 and the wiring 24 are provided so that one or more pixel electrodes 36 (not illustrated) are included in the opening of the mesh in a plan view, and accordingly, they can be provided not to block light from the display element.
  • the conductive layer 26 may be provided to fill a space between the wiring 23 and the wiring 24 as illustrated in FIG. 7B.
  • the conductive layer 26 preferably includes portions parallel in the X direction and portions parallel in the Y direction as well as the wiring 23 and the wiring 24.
  • part of the conductive layer 26 preferably has a mesh shape.
  • the wiring 23 and the wiring 24 can intersect each other without a special contrivance.
  • the wiring 24 may have a structure in which an island-shaped portion formed by processing the same conductive film as the wiring 23 and an island-shaped portion formed by processing a conductive film over an insulating layer that is different from the wiring 23 are connected to each other so that the wiring 23 and the wiring 24 intersect each other, for example.
  • the wiring 23 may have a structure in which such two types of island-shaped portions are connected to each other.
  • the wiring 23 and the wiring 24 may intersect each other without an electrical short-circuit in such a manner that at least one of the wirings 23 and 24 is formed using portions parallel in the X direction and portions parallel in the Y direction which are formed by processing different conductive films over different insulating layers and the two types of portions are connected to each other.
  • a specific structure example of a wiring in the case where a liquid crystal element is used for the display portion 32 is described below. Note that in the following diagrams, a layer, a wiring, and the like formed by processing the same conductive film are shown with the same hatching pattern for simplicity.
  • FIG. 8 illustrates an example of arrangement (layout) of the signal line 51, the scan line 52, the wiring 23, the wiring 24, the pixel electrode 36, and the like in the display portion 32.
  • FIG. 8 corresponds to an enlarged view of the region A in FIG. 6A or FIG. 7A.
  • the signal line 51 and the wiring 23 are parallel in the X direction.
  • the scan line 52 and the wiring 24 are parallel in the Y direction.
  • the signal line 51 and the wiring 23 are formed by processing the same conductive film, and the scan line 52 and the wiring 24 are formed by processing the same conductive film.
  • the wiring 23 and the wiring 24 can be formed without an increase in the number of steps.
  • Such a structure enables the wiring 23 and the wiring 24, the signal line 51 and the wiring 24, and the scan line 52 and the wiring 23 to intersect each other without a special contrivance.
  • FIG. 8 illustrates a pixel circuit 80 including the transistor 70 and the pixel electrode 36.
  • the pixel circuits 80 are arranged in the X direction and the Y direction in a matrix.
  • the pixel circuit 80 corresponds to one sub-pixel included in the display portion 32.
  • part of the scan line 52 functions as a gate electrode.
  • Part of the signal line 51 functions as a source electrode or a drain electrode.
  • the semiconductor layer 72 is provided to overlap with a projected portion of the scan line 52, and a projected portion of the signal line 51 is provided to overlap with part of the semiconductor layer 72.
  • the conductive layer 74b is provided on a side opposite to the signal line 51 of the semiconductor layer 72. The conductive layer 74b is electrically connected to the pixel electrode 36.
  • the wiring 23 is provided between the two pixel circuits 80 adjacent in the Y direction. It can be said that the wiring 23 is provided between the two pixel electrodes 36 adjacent in the Y direction, between the two signal lines 51 adjacent in the Y direction, between the two semiconductor layers 72 adjacent in the Y direction, between the two conductive layers 74b adjacent in the Y direction, or the like.
  • the wiring 24 is provided between the two pixel circuit 80 adjacent in the X direction. It can be said that the wiring 24 is provided between the two pixel electrodes 36 adjacent in the X direction, between the two scan lines 52 adjacent in the X direction, between the two semiconductor layers 72 adjacent in the X direction, between the two conductive layers 74b adjacent in the X direction, or the like.
  • FIG. 8 illustrates an example where the width of the wiring 24 is larger than that of the wiring 23.
  • the width of the wiring 24 is preferably larger than that of the wiring 23 to reduce electrical resistance.
  • the thickness of the wiring 24 may be larger than that of the wiring 23 to reduce electrical resistance of the wiring 24.
  • the width of the wiring 23 and the width of the wiring 24 are not limited thereto, and that of the wiring 23 may be larger than that of the wiring 24 or those of the wirings 23 and 24 may be substantially the same.
  • each of the wirings 23 and 24 can be appropriately set so that for example, the time constant of the wiring 23 and that of the wiring 24 are substantially the same or one of the wirings 23 and 24 which is used as a detection- side wiring has a smaller time constant than the other.
  • FIG. 9A illustrates an example where the structure of the wiring 24 is different from that in FIG. 8.
  • the wiring 24 in FIG. 9 A has a structure in which a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the same conductive film as the scan line 52 are alternately arranged.
  • the two types of portions overlap with each other in regions and are electrically connected to each other through openings in an insulating layer positioned therebetween in the regions.
  • Each of the portions of the wiring 24 that are formed by processing the same conductive film as the scan line 52 intersects at least one of the signal line 51 and the wiring 23.
  • FIG. 9B illustrates an example where the structure of the wiring 23 is different from that in FIG. 8.
  • the wiring 23 in FIG. 9B has a structure in which a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the same conductive film as the scan line 52 are alternately arranged.
  • the two types of portions overlap with each other in regions and are electrically connected to each other through openings in an insulating layer positioned therebetween in the regions.
  • Each of the portions of the wiring 23 that are formed by processing the same conductive film as the signal line 51 intersects at least one of the scan line 52 and the wiring 24.
  • Structure Examples 1-1 to 1-3 are preferably used in the case where the wiring 23 and the wiring 24 have a stripe shape in a portion overlapping with the display portion 32 as illustrated in Example 1 of Wiring Shape (e.g., FIGS. 6A and 6B), for example.
  • FIG. 10A illustrates an example where the wiring 23 includes both of portions parallel in the X direction and portions parallel in the Y direction.
  • FIG. 10B illustrates an example where the wiring 24 includes both of portions parallel in the X direction and portions parallel in the Y direction.
  • FIG. 10A corresponds to an enlarged view of the region B in FIG. 7 A
  • FIG. 10B corresponds to an enlarged view of the region C in FIG. 7 A.
  • the wiring 23 is used for the description here, the wiring 24, and the conductive layer 26, the conductive layer 26a, the conductive layer 26b, and the like, which are described above can have similar shapes.
  • the portions parallel in the X direction in the wiring 23 are formed by processing the same conductive film as the signal line 51. Meanwhile, the portions parallel in the Y direction are formed by processing the same conductive film as the scan line 52.
  • the portions parallel in the X direction are electrically connected to the portions parallel in the Y direction through openings in an insulating film positioned between the two types of portions at the intersections of the two types of portions. With such a structure, the wiring 23 can have a mesh shape.
  • the wiring 23 has one opening surrounded by two portions adjacent and parallel in the X direction and two portions adjacent and parallel in the Y direction.
  • FIGS. 10A and 10B each illustrate a structure where the three pixel electrodes 36 are provided in the opening, one embodiment of the present invention is not limited thereto, and a structure where one or more pixel electrodes 36 are provided can be employed.
  • the wiring 23 has a dense mesh shape, the resistance of the wiring 23 can be reduced. Meanwhile, when the wiring 23 has a sparse mesh shape, parasitic capacitance of the wiring 23 can be reduced.
  • the distance between the two portions parallel and adjacent in the X direction in the wiring 23 and the distance between the two portions parallel and adjacent in the Y direction in the wiring 23 are set to be substantially the same; however, they may be different from each other.
  • the two portions parallel and adjacent in the Y direction may be provided with a distance of two pixels (e.g., with a distance of six sub-pixels in the case where three sub-pixels of RGB are provided) therebetween, and the two portions parallel and adjacent in the X direction may be provided with a distance of one pixel therebetween.
  • the wiring 23 has a mesh shape including an opening which is long in the Y direction.
  • FIG. 11A illustrates an example where the structure of the wiring 23 is different from those in FIGS. 10A and 10B.
  • portions parallel in the X direction in the wiring 23 are formed by processing the same conductive film as the signal line 51.
  • portions parallel in the Y direction in the wiring 23 have a structure in which a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 and a portion (conductive layer) obtained by processing the same conductive film as the scan line 52 are alternately arranged.
  • the two different conductive layers overlap with each other in regions and are electrically connected to each other through openings in an insulating layer positioned therebetween in the regions.
  • FIG. 1 IB illustrates an example where the structure of the wiring 23 is different from those in FIGS. 10A and 10B and FIG. 11 A.
  • portions parallel in the Y direction in the wiring 23 are formed by processing the same conductive film as the scan line 52.
  • portions parallel in the X direction in the wiring 23 have a structure in which a portion (conductive layer) obtained by processing the same conductive film as the scan line 52 and a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 are alternately arranged.
  • the two different conductive layers overlap with each other in regions and are electrically connected to each other through openings in an insulating layer positioned therebetween in the regions.
  • Structure Examples 2-1 to 2-3 are preferably used in the case where the wiring 23 and the wiring 24 have a mesh shape as illustrated in Example 2 of Wiring Shape (e.g., FIGS. 7 A and 7B), for example.
  • the wiring 23 and the wiring 24 are formed by processing the same conductive films as the signal line 51 and the scan line 52 is described above, one or both of the wirings 23 and 24 may be formed by processing a conductive film different from the signal line 51 and the scan line 52.
  • FIG. 12A illustrates an example where the wiring 23 is formed by processing a conductive film different from the signal line 51 unlike the structure illustrated in FIG. 8.
  • the wiring 23 may be positioned above the signal line 51 and the scan line 52, between the scan line 52 and the signal line 51, or below the signal line 51 and the scan line 52 (on the substrate 21 side).
  • the wiring 23, the signal line 51, and the scan line 52 are preferably formed over respective insulating layers.
  • the wiring 23 may be formed by processing the same conductive film as the pixel electrode 36, for example. In that case, the wiring 23 can be formed through the same steps as the pixel electrode 36.
  • the wiring 23 and the wiring 24 are electrically connected to each other through openings in the insulating layer positioned therebetween to form a mesh shape.
  • the wiring 23 and the signal line 51 are provided over different insulating layers, they can be provided to overlap with each other as illustrated in FIG. 12B. Thus, a space for the wiring 23 is unnecessary in the Y direction, which leads to an increase in resolution or aperture ratio.
  • FIG. 12B illustrates the case where a linear portion of the signal line 51 is included in the wiring 23 in a plan view; however, one embodiment of the present invention is not limited thereto.
  • the wiring 23 and the signal line 51 may be provided so that the wiring 23 has a smaller width than the signal line 51 and is included in the signal line 51 in a plan view.
  • the wiring 23 and the signal line 51 may be provided so that part of the signal line 51 overlaps with the wiring 23 and the other part thereof does not overlap with the wiring 23. Thus, parasitic capacitance between the signal line 51 and the wiring 23 can be reduced.
  • FIG. 13 illustrates an example where the wiring 24 is formed by processing a conductive film different from the scan line 52 unlike the structure illustrated in FIG. 8.
  • the wiring 24 in FIG. 13 is provided in a position closer to the substrate 21 side than the wiring 23 and the signal line 51 are.
  • the wiring 24 may be provided over an insulating layer different from the signal line 51, the scan line 52, the wiring 23, and the like.
  • the wiring 24 may be formed by processing the same conductive film as the pixel electrode 36.
  • FIG. 14A illustrates an example where the wiring 23, the wiring 24, the signal line 51, and the scan line 52 are formed by processing respective conductive films.
  • the wiring 23, the wiring 24, the signal line 51, and the scan line 52 may be provided over respective insulating layers.
  • the wiring 24 is positioned at least above the wiring 23, the signal line 51, and the scan line 52, and the wiring 23 is positioned at least above the scan line 52.
  • FIG. 14B illustrates an example where the wiring 24 is positioned at least below the signal line 51, and the wiring 23 is positioned at least below the wiring 24 and the scan line 52.
  • the positions of the wiring 23, the wiring 24, the signal line 51, and the scan line 52 in the height direction are not limited thereto, and a variety of stack structures can be employed.
  • the wiring 23 and the signal line 51 may be provided to at least partly overlap with each other, or the wiring 24 and the scan line 52 may be provided to at least partly overlap with each other.
  • FIG. 15A illustrates an example where the wiring 23 having a mesh shape is formed by processing the same conductive film as the pixel electrode 36.
  • FIG. 15B illustrates an example where the wiring 23 having a mesh shape is formed using a conductive film different from the signal line 51, the scan line 52, and the pixel electrode 36.
  • the wiring 23 is positioned at least above the scan line 52 and at least below the signal line 51.
  • the position of the wiring 23 in the height direction is not limited thereto, and the wiring 23 may be provided over an insulating layer different from the signal line 51, the scan line 52, and the pixel electrode 36.
  • the wiring 23 may be positioned below or above the signal line 51, the scan line 52, and the pixel electrode 36 or between two of the signal line 51, the scan line 52, and the pixel electrode 36.
  • the wiring 23 is described here, the wiring 24 (the conductive layers 26a and 26b and the conductive layer 26) can have a similar structure.
  • FIG. 16 illustrates a structure example of the pixel circuit 80 applicable to a liquid crystal element using a VA mode.
  • the pixel circuit 80 in FIG. 16 includes the transistor 70, a capacitor 85, the pixel electrode 36, and the like.
  • the pixel circuit 80 is connected to a capacitor line 53 in addition to the signal line 51 and the scan line 52.
  • Part of the capacitor line 53 functions as one electrode of the capacitor 85 in the pixel circuit 80.
  • the capacitor line 53 can be supplied with a fixed potential such as a common potential, a ground potential, or a reference potential, for example, and may be supplied with a pulse potential or the like depending on a driving method.
  • the capacitor 85 includes part of the conductive layer 74b, part of the capacitor line 53, and an insulating layer (not illustrated) positioned therebetween.
  • the capacitor line 53 is provided to extend in a direction (the Y direction) parallel to the scan line 52.
  • the capacitor line 53 may be provided to extend in a direction (the X direction) parallel to the signal line 51 or may be provided to extend in both directions in a grid pattern.
  • the capacitor line 53 is formed by processing the same conductive film as the scan line 52; however, the capacitor line 53 may be formed by processing the same conductive film as the signal line 51, the pixel electrode 36, or the like, or by processing a conductive film different from them.
  • the wiring 23 and the wiring 24 each have the structure described in
  • the wiring 23 extending in the X direction is formed by processing the same conductive film as the signal line 51 and the wiring 24 extending in the Y direction is formed by processing the same conductive film as the scan line 52. Note that the structures of the wirings 23 and 24 can be replaced with the above-described structures.
  • FIG. 17 illustrates a structure example of the pixel circuit 80 applicable to a liquid crystal element using an FFS mode.
  • the pixel circuit 80 in FIG. 17 includes the transistor 70, the pixel electrode 36, and the common electrode 38.
  • the pixel circuit 80 is connected to the signal line 51, the scan line 52, and a common wiring 54.
  • the common wiring 54 is a wiring supplied with a potential supplied to the common electrode 38.
  • the common wiring 54 can be supplied with a fixed potential such as a common potential, a ground potential, or a reference potential, for example, and may be supplied with a pulse potential or the like depending on a driving method.
  • the common electrode 38 is provided to overlap with the pixel electrode 36.
  • the pixel electrode 36 has a comb-like top surface shape.
  • the common electrode 38 is provided to overlap with at least a region between two adjacent projected portions of the pixel electrode 36.
  • a side of the projected portion of the pixel electrode 36 is preferably oblique to the X direction or the Y direction.
  • the obliquely projected portions of the pixel electrode 36 are arranged symmetrically with respect to the Y direction.
  • two kinds of portions projected symmetrically with respect to the X direction or the Y direction are preferably provided in such a manner. The use of the pixel electrode 36 having such a structure can expand the viewing angle of the display portion 32.
  • a capacitor can be formed using the pixel electrode 36, the common electrode 38, and an insulating layer (not illustrated) positioned therebetween.
  • a space for a capacitor line or a capacitor is unnecessary, which easily leads to an increase in aperture ratio or resolution.
  • the common electrodes 38 extend in the Y direction. Furthermore, the common electrodes 38 are electrically connected to the common wirings 54 extending parallel to each other in the X direction. Consequently, the common electrodes 38 in the plurality of pixel circuits 80 adjacent in the Y direction and the plurality of pixel circuits 80 adjacent in the X direction can be electrically connected to each other.
  • the width of the common electrode 38 in the X direction be small in a portion where the common electrode 38 and the signal line 51 overlap with each other as illustrated in FIG. 17 because parasitic capacitance between the common electrode 38 and the signal line 51 can be reduced.
  • the common electrode 38 has a comb-like top surface shape and the pixel electrode 36 is provided to overlap with a region between two projected portions of the common electrode 38.
  • the common wiring 54 is formed by processing the same conductive film as the signal line 51; however, the common wiring 54 may be formed by processing the same conductive film as the scan line 52, the common electrode 38, the pixel electrode 36, or the like, or by processing a conductive film different from them.
  • the wiring 23 and the wiring 24 each have the structure described in Structure Example 1-1. Specifically, the wiring 23 extending in the X direction is formed by processing the same conductive film as the signal line 51 and the wiring 24 extending in the Y direction is formed by processing the same conductive film as the scan line 52. Note that the structures of the wirings 23 and 24 can be replaced with the above-described structures.
  • FIG. 18A is different from FIG. 17 mainly in the shape of the pixel electrode 36.
  • the pixel electrode 36 has a top surface shape including one or more openings (slits).
  • the shape of the slit of the pixel electrode 36 is preferably a V-shape in which part of a rectangle is bent, not a rectangle.
  • the viewing angle of the display portion 32 can be expanded.
  • FIG. 18A illustrates an example where the width of part of the common electrode 38 is reduced so that an area where the common electrode 38 and the signal line 51 intersect each other between the adjacent pixel circuits 80 is reduced.
  • Such a structure can reduce the parasitic capacitance of the signal line 51.
  • FIG. 18B illustrates an example where the common electrode 38 has a shape different from that in FIG. 18 A.
  • the common electrode 38 includes an opening overlapping with the transistor 70 and a contact portion between the conductive layer 74b and the pixel electrode 36. In FIG. 18B, one opening is provided for each pixel circuit.
  • the common electrode 38 is provided to extend in the X direction and the Y direction.
  • the common electrode 38 includes a region overlapping with part of the signal line 51 and a region overlapping with part of the scan line 52. Such a structure can reduce electrical resistance of the common electrode 38 in the X direction and the Y direction.
  • FIG. 19 illustrates an example where the common electrode 38 is positioned above the pixel electrode 36.
  • the pixel electrode 36 positioned in a lower portion also has a comb-like top surface shape.
  • the pixel electrode 36 and the common electrode 38 are arranged to engage with each other in a plan view.
  • a side of a projected portion of the pixel electrode 36 and a side of a projected portion of the common electrode 38 are substantially aligned with each other in a plan view.
  • the pixel electrode 36 and the common electrode 38 may be provided so that the two projected portions partly overlap with each other in a plan view.
  • the pixel electrode 36 and the common electrode 38 may be provided so that the two projected portions are apart from each other in a plan view.
  • the signal line 51 has a top surface shape having a portion of which has a small width so that the width of a portion overlapping with the scan line 52, the common electrode 38, and the like is small and the other portion of which has a large width.
  • the scan line 52 also has a top surface shape having a partly small width so that an area overlapping with the signal line 51 is small.
  • FIG. 20 illustrates an example where two pixel circuits 80 are provided in each of the X direction and the Y direction.
  • the pixel circuits 80 are provided symmetrically with respect to the X direction and the Y direction, and accordingly, one unit including four pixel circuits 80 is formed.
  • the common electrode 38 includes a portion extending in the X direction and a portion extending in the Y direction.
  • a portion which connects the common electrodes 38 included in the pixel circuits 80 adjacent in the Y direction extends in the X direction and is provided between the two pixel circuits 80 adjacent in the Y direction.
  • a portion which connects the common electrodes 38 included in the pixel circuits 80 adjacent in the X direction extends in the Y direction and is provided between the two pixel circuits 80 adjacent in the X direction.
  • the area of the portions where the common electrodes 38 included in the adjacent pixel circuits 80 are connected to each other can be reduced, so that the aperture ratio or the resolution can be increased.
  • a specific structure example of a wiring in the case where an organic EL element is used for the display portion 32 is described below. Note that in the following diagrams, a layer, a wiring, and the like formed by processing the same conductive film are shown with the same hatching pattern for simplicity. Note that portions similar to those described in Structure Example 1 of Wiring are not described in some cases.
  • FIG. 21 illustrates an example of arrangement (layout) of the signal line 51, the scan line 52, a power supply line 55, the wiring 23, the wiring 24, the pixel electrode 36, and the like in the display portion 32.
  • the signal line 51 and the wiring 23 are parallel in the X direction.
  • the scan line 52 and the wiring 24 are parallel in the Y direction.
  • the signal line 51 and the wiring 23 are formed by processing the same conductive film, and the scan line 52 and the wiring 24 are formed by processing the same conductive film.
  • the wiring 23 and the wiring 24 can be formed without an increase in the number of steps.
  • the power supply line 55 has a function of supplying a potential or a signal to one electrode of the capacitor 85 of the pixel circuit 80.
  • An example where the power supply line 55 is parallel to the signal line 51 is shown here. Note that the power supply line 55 may be parallel to the scan line 52. In that case, when the power supply line 55 is formed by processing the same conductive film as the scan line 52, the power supply line 55 and the signal line 51 can intersect each other and the power supply line 55 and the wiring 23 can intersect each other without any special contrivance.
  • the pixel circuit 80 in FIG. 21 includes a transistor 70a, a transistor 70b, the capacitor 85, and the pixel electrode 36.
  • the pixel circuits 80 are arranged in the X direction and the Y direction in a matrix.
  • the pixel circuit 80 corresponds to one sub-pixel included in the display portion 32.
  • part of the scan line 52 functions as a gate electrode of the transistor 70a.
  • Part of the signal line 51 functions as one of a source electrode and a drain electrode of the transistor 70a.
  • the semiconductor layer 72 is provided to overlap with part of the scan line 52, and the signal line 51 is provided to overlap with part of the semiconductor layer 72.
  • the conductive layer 74b functioning as the other of the source electrode and the drain electrode of the transistor 70a is provided on a side opposite to the signal line 51 of the semiconductor layer 72.
  • the conductive layer 74b is electrically connected to the conductive layer 76. A portion of the conductive layer 76 functions as a gate electrode of the transistor 70b.
  • the conductive layer 76 and the power supply line 55 are provided to overlap with each other so that the capacitor 85 is formed. In other words, another portion of the conductive layer 76 functions as one electrode of the capacitor 85. A portion of the power supply line 55 functions as the other electrode of the capacitor 85 and another portion of the power supply line 55 functions as one of a source and a drain of the transistor 70b. The other of the source and the drain of the transistor 70b is electrically connected to the pixel electrode 36.
  • FIG. 22A illustrates an example where the structure of the wiring 24 is different from that in FIG. 21.
  • the wiring 24 in FIG. 22 A has a structure in which a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the same conductive film as the scan line 52 are alternately arranged as in Structure Example 1-2.
  • the two types of portions overlap with each other in regions and are electrically connected to each other through openings in an insulating layer positioned therebetween in the regions.
  • Each of the portions of the wiring 24 that are formed by processing the same conductive film as the scan line 52 intersects at least one of the signal line 51, the power supply line 55, and the wiring 23.
  • FIG. 22B illustrates an example where the structure of the wiring 23 is different from that in FIG. 21.
  • the wiring 23 in FIG. 22B has a structure in which a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the same conductive film as the scan line 52 are alternately arranged as in Structure Example 1-3.
  • the two types of portions overlap with each other in regions and are electrically connected to each other through openings in an insulating layer positioned therebetween in the regions.
  • FIG. 23 illustrates an example where the wiring 23 includes both of portions parallel in the X direction and portions parallel in the Y direction as in Structure Example 2-1.
  • the wiring 23 is used for the description here, the wiring 24, the conductive layer 26, the conductive layer 26a, the conductive layer 26b, and the like can have similar shapes.
  • FIG. 24A illustrates an example where the structure of the wiring 23 is different from that in FIG. 23.
  • portions parallel in the X direction in the wiring 23 are formed by processing the same conductive film as the signal line 51 as in Structure Example 2-2.
  • portions parallel in the Y direction in the wiring 23 have a structure in which a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 and a portion (conductive layer) obtained by processing the same conductive film as the scan line 52 are alternately arranged.
  • the two types of different conductive layers overlap with each other in regions and are electrically connected to each other through openings in an insulating layer positioned therebetween in the regions.
  • the portions obtained by processing the same conductive film as the scan line 52 intersect at least one of the signal line 51 and the power supply line 55.
  • FIG. 24B illustrates an example where the structure of the wiring 23 is different from those in FIG. 23 and FIG. 24A.
  • portions parallel in the Y direction in the wiring 23 are formed by processing the same conductive film as the scan line 52 as in Structure Example 2-3.
  • portions parallel in the X direction in the wiring 23 have a structure in which a portion (conductive layer) obtained by processing the same conductive film as the scan line 52 and a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 are alternately arranged.
  • the two different conductive layers overlap with each other in regions and are electrically connected to each other through openings in an insulating layer positioned therebetween in the regions.
  • the wiring 23 and the wiring 24 are formed by processing the same conductive films as the signal line 51 and the scan line 52 is described above, one or both of the wirings 23 and 24 may be formed by processing a conductive film different from the signal line 51 and the scan line 52 as in Structure Example 3-1 or the like.
  • FIG. 25A and FIG. 25B each illustrate an example where the wiring 23 is formed by processing a conductive film different from the signal line 51 unlike the structure illustrated in FIG. 21.
  • FIG. 26 illustrates an example where the wiring 24 is formed by processing a conductive film different from the scan line 52 unlike the structure illustrated in FIG. 21.
  • FIG. 27 A illustrates an example where the wiring 23, the wiring 24, the signal line 51, and the scan line 52 are formed by processing respective conductive films as in Structure Example 3-2.
  • the wiring 23, the wiring 24, the signal line 51, and the scan line 52 may be provided over respective insulating layers.
  • the wiring 24 is positioned at least above the wiring 23, the signal line 51, and the scan line 52, and the wiring 23 is positioned at least above the scan line 52.
  • FIG. 27B illustrates an example where the wiring 24 is positioned at least below the signal line 51, and the wiring 23 is positioned at least below the wiring 24 and the scan line 52.
  • FIG. 28A illustrates an example where the wiring 23 having a mesh shape is formed by processing the same conductive film as the pixel electrode 36 as in Structure Example 3-3.
  • FIG. 28B illustrates an example where the wiring 23 having a mesh shape is formed using a conductive film different from the signal line 51, the scan line 52, and the pixel electrode 36.
  • the wiring 23 is positioned at least above the scan line 52 and at least below the signal line 51.
  • FIG. 29 illustrates an example of a circuit diagram of a touch panel of one embodiment of the present invention.
  • FIG. 29 part of a display portion in which two kinds of wirings included in a touch sensor are each provided in a stripe form is illustrated.
  • the example in FIG. 29 corresponds to the examples in FIGS. 6A and 6B and the like.
  • Pixels 90 arranged in a matrix each include the transistor 70 and a circuit 91.
  • the circuit 91 includes at least one display element.
  • a variety of display elements can be applied to the display element. Typically, the above-described liquid crystal element 60 or the light-emitting element 40 is preferably used.
  • a wiring 23a and a wiring 23b each include a plurality of portions extending in a direction parallel to the signal line 51 (the X direction). Furthermore, a wiring 24a and a wiring 24b include a plurality of portions extending in a direction parallel to the scan line 52 (the Y direction).
  • the wiring 23a, the wiring 23b, the wiring 24a, and the wiring 24b have the plurality of portions electrically connected to each other in a region outside the display portion. Note that in the following description, the wiring 23a and the wiring 23b are collectively referred to as the wiring 23 and the wiring 24a and the wiring 24b are collectively referred to as the wiring 24 in some cases.
  • the wiring 23 and the wiring 24 form capacitors.
  • the capacitors are arranged in a matrix to form a touch sensor.
  • the touch sensor can sense an object by utilizing a change in capacitance of the capacitor due to the approach of the object.
  • the capacitance includes, for example, a first capacitance component of a portion where the wiring 23 and the wiring 24 overlap with each other and a second capacitance component formed when the wiring 23 and the wiring 24 are provided close to each other.
  • the second capacitance component is mainly changed owing to the approach of the object.
  • the wirings extending in the X direction each have two portions parallel in the X direction and the wirings extending in the Y direction (the wiring 24a and the wiring 24b) each have two portions parallel in the Y direction; however, one embodiment of the present invention is not limited thereto, and three or more portions parallel in the X direction or three or more portions parallel in the Y direction may be provided.
  • the number of pixels 90 provided between two linear portions of one wiring is not limited to the example in FIG. 29 as long as at least one pixel 90 is provided.
  • FIG. 30 part of a display portion in which two kinds of wirings included in a touch sensor are each have a mesh shape is illustrated.
  • the example in FIG. 30 corresponds to the examples in FIGS. 7 A and 7B and the like.
  • FIG. 30 illustrates an intersection of the wiring 23 and the wiring 24 which each have a mesh shape.
  • the wiring 23 and the wiring 24 form capacitors. Detection can be performed by utilizing a change in capacitance of the capacitor.
  • a specific cross-sectional structure example of a touch panel module of one embodiment of the present invention in which a liquid crystal element is applied to a display element is described below.
  • FIG. 31 is a schematic cross-sectional view of the touch panel module 10.
  • FIG. 31 illustrates an example of cross sections of a region including the FPC 42, a region including the circuit 34, a region including the display portion 32, and the like in FIG. 1 A.
  • the substrate 21 and the substrate 31 are attached to each other with an adhesive layer 141.
  • a region surrounded by the substrate 21, the substrate 31, and the adhesive layer 141 is filled with a liquid crystal 112.
  • a polarizing plate 130a is provided on an outer surface of the substrate 31.
  • a polarizing plate 130b is provided on an outer surface of the substrate 21.
  • a backlight can be provided outside the polarizing plate 130a or the polarizing plate 130b.
  • a touch sensor 22 including the wiring 23 and the wiring 24, a pixel electrode 111 of the liquid crystal element 60, a transistor 201, a transistor 202, a capacitor 203, a connection portion 204, the wiring 35, and the like are provided over the substrate 21.
  • the transistor 201 corresponds to the transistor 70 described above.
  • a coloring layer 131, a light-blocking layer 132, an insulating layer 123, a common electrode 113 of the liquid crystal element 60, a spacer 124, and the like are provided over the substrate 31.
  • Insulating layers such as an insulating layer 211, an insulating layer 212, an insulating layer 213, and an insulating layer 214 are provided over the substrate 21.
  • a portion of the insulating layer 211 functions as a gate insulating layer of each transistor, and another portion thereof functions as a dielectric of the capacitor 203.
  • the insulating layer 212, the insulating layer 213, and the insulating layer 214 are provided to cover each transistor, the capacitor 203, and the like.
  • the insulating layer 214 functions as a planarization layer.
  • the insulating layers 212, 213, and 214 are provided to cover the transistors and the like is described here; however, one embodiment of the present invention is not limited to this example, and four or more insulating layers, a single insulating layer, or two insulating layers may be provided.
  • the insulating layer 214 functioning as a planarization layer is not necessarily provided when not needed.
  • the transistor 201 and the transistor 202 each include a conductive layer 221 part of which functions as a gate, conductive layers 222 part of which functions as a source electrode and a drain electrode, and a semiconductor layer 231.
  • a plurality of layers obtained by processing the same conductive film are shown with the same hatching pattern.
  • one of the pair of conductive layers 222 which is not electrically connected to the pixel electrode 111 functions as part of a signal line.
  • the conductive layer 221 functioning as a gate electrode of the transistor 202 also functions as part of a scan line.
  • FIG. 31 illustrates an example where the wiring 23 is formed by processing the same conductive film as the conductive layer 222 and the wiring 24 is formed by processing the same conductive film as the conductive layer 221.
  • FIG. 31 illustrates a cross section of one sub-pixel as an example of the display portion 32.
  • the sub-pixel includes, for example, the transistor 202, the capacitor 203, the liquid crystal element 60, and the coloring layer 131.
  • the coloring layers 131 are selectively formed so that a sub-pixel exhibiting a red color, a sub-pixel exhibiting a green color, and a sub-pixel exhibiting a blue color are arranged; thus, full-color display can be achieved.
  • the pixel circuit (sub-pixel circuit) includes the transistor 202, the capacitor 203, the pixel electrode 111, a wiring, and the like.
  • FIG. 31 illustrates an example of the circuit 34 in which the transistor 201 is provided.
  • the transistors 201 and 202 each include one gate electrode in FIG. 31, the semiconductor layer 231 where a channel is formed may be provided between two gate electrodes.
  • Such a structure enables control of threshold voltages of transistors.
  • the two gate electrodes may be connected to each other and supplied with the same signal to operate the transistors.
  • Such transistors can have higher field-effect mobility and thus have higher on-state current than other transistors. Consequently, a circuit capable of high-speed operation can be obtained. Furthermore, the area occupied by a circuit portion can be reduced.
  • the use of the transistor having high on-state current can reduce signal delay in wirings and can reduce display unevenness even in a display panel or a touch panel in which the number of wirings is increased because of increase in size or resolution.
  • transistor included in the circuit 34 and the transistor included in the display portion 32 may have the same structure.
  • a plurality of transistors included in the circuit 34 may have the same structure or different structures.
  • a plurality of transistors included in the display portion 32 may have the same structure or different structures.
  • a material through which impurities such as water or hydrogen do not easily diffuse is preferably used for at least one of the insulating layers 212 and 213 which cover the transistors. That is, the insulating layer 212 or the insulating layer 213 can function as a barrier film. Such a structure can effectively suppress diffusion of the impurities into the transistors from the outside, and a highly reliable touch panel can be provided.
  • the pixel electrode 111 is provided over the insulating layer 214.
  • the pixel electrode 111 is electrically connected to one of a source and a drain of the transistor 202 through an opening formed in the insulating layer 214, the insulating layer 213, the insulating layer 212, and the like.
  • the pixel electrode 111 is also electrically connected to one electrode of the capacitor 203.
  • the insulating layer 123 is provided on the substrate 31 side to cover the coloring layer 131 and the light-blocking layer 132.
  • the insulating layer 123 may have a function of a planarization film.
  • the insulating layer 123 enables the common electrode 113 to have an almost flat surface, resulting in a uniform alignment state of the liquid crystal 112.
  • the liquid crystal element 60 includes the pixel electrode 111, part of the common electrode 113, and the liquid crystal 112 sandwiched therebetween.
  • Alignment films for controlling alignment of the liquid crystal 112 may be provided on surfaces of the pixel electrode 111, the common electrode 113, the insulating layer 214, and the like which are in contact with the liquid crystal 112.
  • the wirings 23 and 24 are provided not to overlap with the liquid crystal element 60. Furthermore, it is preferable that the wirings 23 and 24 be provided to overlap with the light-blocking layer 132.
  • the liquid crystal element 60 the pixel electrode 1 11 and the common electrode 113 each have a function of transmitting visible light.
  • the liquid crystal element 60 can be a transmissive liquid crystal element.
  • a backlight is provided on the substrate 31 side
  • light from the backlight which is polarized by the polarizing plate 130a passes through the substrate 31, the common electrode 113, the liquid crystal 112, the pixel electrode 111, and the substrate 21, and then reaches the polarizing plate 130b.
  • alignment of the liquid crystal 112 is controlled with a voltage that is applied between the pixel electrode 111 and the common electrode 113, and thus optical modulation of light can be controlled. That is, the intensity of light emitted through the polarizing plate 130b can be controlled.
  • Light other than one in a particular wavelength region of the incident light is absorbed by the coloring layer 131, and thus, emitted light is red light, for example.
  • polarizing plate 130b a linear polarizing plate or a circularly polarizing plate can be used.
  • An example of a circularly polarizing plate is a stack including a linear polarizing plate and a quarter-wave retardation plate.
  • FIG. 31 in the case where the wiring 23 and the wiring 24 included in the touch sensor are provided in a position closer to the substrate 21 side than the light-blocking layer 132 is, external light is reflected by the wirings and the reflected light is visually recognized in some cases. In this case, reflection can be suppressed with a circularly polarizing plate used as the polarizing plate 130b.
  • a circularly polarizing plate may be also used as the polarizing plate 130a and a general linear polarizing plate may be used.
  • the cell gap, alignment, driving voltage, and the like of the liquid crystal element used as the liquid crystal element 60 are controlled depending on the kinds of polarizing plates used as the polarizing plates 130a and 130b so that desirable contrast is obtained.
  • the liquid crystal element 60 can use a variety of modes given in Cross-sectional
  • the common electrode 113 is electrically connected to a conductive layer provided on the substrate 21 through a connector 243 in a portion close to an end portion of the substrate 31.
  • a potential or a signal can be supplied from an FPC or an IC provided on the substrate 21 side to the common electrode 113.
  • a conductive particle can be used, for example.
  • a particle of an organic resin, silica, or the like coated with a metal material can be used. It is preferable to use nickel or gold as the metal material because contact resistance can be decreased. It is also preferable to use a particle coated with layers of two or more kinds of metal materials, such as a particle coated with nickel and further with gold.
  • a material capable of elastic deformation or plastic deformation is preferably used. As illustrated in FIG. 31, the conductive particle has a shape that is vertically crushed in some cases. With the crushed shape, the contact area between the connector 243 and a conductive layer electrically connected to the connector 243 can be increased, thereby reducing contact resistance and suppressing the generation of problems such as disconnection.
  • the connector 243 is preferably provided so as to be covered with the adhesive layer 141.
  • a paste or the like for forming the adhesive layer 141 may be applied, and then, the connector 243 may be provided.
  • a structure in which the connector 243 is provided in a portion provided with the adhesive layer 141 can be applied to, for example, a structure in which the adhesive layer 141 is provided in the peripheral region, e.g., a display device with a solid sealing structure or a display device with a hollow sealing structure.
  • connection portion 204 is provided in a region near an end portion of the substrate
  • connection portion 204 is electrically connected to the FPC 42 through a connection layer 242.
  • the connection portion 204 is formed by stacking part of the wiring 35 and a conductive layer obtained by processing the same conductive film as the pixel electrode 111.
  • a cross-sectional structure example of the touch panel module 10 that includes a liquid crystal element having a mode different from that in Cross-sectional Structure Example 3-1 is described below. Note that descriptions of the portions already described are omitted and different portions are described below.
  • FIG. 32 illustrates an example where the liquid crystal element 60 is a liquid crystal element using an FFS mode.
  • the liquid crystal element 60 includes a pixel electrode 151, a liquid crystal 152, and a common electrode 153.
  • the common electrode 153 is provided over the insulating layer 214.
  • the insulating layer 215 is provided to cover the common electrode 153, and the pixel electrode 151 is provided over the insulating layer 215.
  • the pixel electrode 151 is electrically connected to one of a source and a drain of the transistor 202 through an opening provided in the insulating layers 212 to 215.
  • the pixel electrode 151 has a comb-like top surface shape or a top surface shape with a slit.
  • the common electrode 153 is provided to overlap with the pixel electrode 151. There is a portion where the pixel electrode 151 is not provided over the common electrode 153 in a region overlapping with the coloring layer 131 and the like.
  • FIG. 32 illustrates an example where the pixel electrode 151 having a comb-like top surface shape or a top surface shape with a slit is provided above the insulating layer 215 and the common electrode 153 is provided below the insulating layer 215.
  • the common electrode 153 may be formed above the insulating layer 215 and the pixel electrode 151 may be formed below the insulating layer 215.
  • the pixel electrode 151 below the insulating layer 215 may be electrically connected to one of a source and a drain of the transistor 202.
  • the common electrode 153 above the insulating layer 215 may have a comb-like top surface shape or a top surface shape with a slit.
  • the pixel electrode 151 and the common electrode 153 are stacked with the insulating layer 215 positioned therebetween to form the capacitor 203. Therefore, another capacitor is not necessarily provided, and thus the aperture ratio of the pixel can be increased.
  • a transmissive liquid crystal element With the use of a conductive material that transmits visible light for the common electrode 153, a transmissive liquid crystal element can be obtained.
  • the aperture ratio can be further increased, which is preferable.
  • one or both of the pixel electrode 151 and the common electrode 153 may be formed using a material that reflects visible light. When both of them are formed using a material that reflects visible light, the aperture ratio can be increased.
  • the common electrode 153 may be formed using a material that reflects visible light and the pixel electrode 151 may be formed using a material that transmits visible light.
  • the pixel electrode 151 may be formed using a material that reflects visible light and the common electrode 153 may be formed using a material that transmits visible light to form a semi-transmissive liquid crystal element. In that case, a reflective mode in which light reflected by the pixel electrode 151 is used and a transmissive mode in which light from a backlight which passes through a slit in the pixel electrode 151 can be switched.
  • a liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used.
  • a blue phase is one of liquid crystal phases, which is generated just before a cholesteric phase changes into an isotropic phase while the temperature of cholesteric liquid crystal is increased. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition in which several weight percent or more of a chiral material is mixed is used for the liquid crystal layer in order to improve the temperature range.
  • the liquid crystal composition which includes liquid crystal exhibiting a blue phase and a chiral material has a short response time and optical isotropy.
  • liquid crystal composition which includes liquid crystal exhibiting a blue phase and a chiral material does not need alignment treatment and has a small viewing angle dependence.
  • An alignment film does not need to be provided and rubbing treatment is thus not necessary; accordingly, electrostatic discharge damage caused by the rubbing treatment can be prevented and defects and damage of the liquid crystal display device in the manufacturing process can be reduced.
  • a cross-sectional structure example of the touch panel module 10 including a liquid crystal element having a mode different from those in Cross-sectional Structure Examples 3-1 and 3-2 is described below. Note that descriptions of the portions already described are omitted and different portions are described below.
  • FIG. 34 illustrates an example where the liquid crystal element 60 is a liquid crystal element using an IPS mode.
  • the liquid crystal element 60 includes the pixel electrode 151, the liquid crystal 152, and the common electrode 153.
  • the pixel electrode 151 and the common electrode 153 are provided over the insulating layer 214.
  • the pixel electrode 151 and the common electrode 153 each have a comb-like top surface shape and are provided to engage with each other.
  • the pixel electrode 151 and the common electrode 153 are preferably formed by processing the same conductive film. In FIG. 34, the pixel electrode 151 and the common electrode 153 are shown with different hatching patterns for clarity.
  • a specific cross-sectional structure example of a touch panel module of one embodiment of the present invention in which an organic EL element is applied to a display element is described below. Note that portions similar to those described above are not described in some cases.
  • FIG. 35 is a schematic cross-sectional view of the touch panel module 10.
  • FIG. 35 illustrates an example of cross sections of a region including the FPC 42, a region including the circuit 34, a region including the display portion 32, and the like in FIG. 1A.
  • the display portion 32 in FIG. 35 illustrates an example of a cross section taken along line X1-X2 in FIG. 21.
  • the substrate 21 and the substrate 31 are attached to each other with the adhesive layer 141.
  • Part of the adhesive layer 141 has a function of sealing the light-emitting element 40.
  • the polarizing plate 130 is preferably provided on an outer surface of the substrate 21.
  • the touch sensor 22 including the wiring 23 and the wiring 24, the light-emitting element 40, the transistor 201, the transistor 202, a transistor 205, the capacitor 203, the connection portion 204, the coloring layer 131, the wiring 35, and the like are provided over the substrate 21.
  • the light-emitting element 40 has a stacked structure of the pixel electrode 111, an EL layer 102, and a common electrode 103.
  • the light-emitting element 40 is a bottom-emission light-emitting element in which light is emitted to the substrate 21 side.
  • Insulating layers such as the insulating layer 211, the insulating layer 212, the insulating layer 213, the insulating layer 214, and the insulating layer 215 are provided over the substrate 21.
  • a portion of the insulating layer 211 functions as a gate insulating layer of each transistor, and another portion thereof functions as a dielectric of the capacitor 203.
  • the insulating layer 212, the insulating layer 213, and the insulating layer 214 are provided to cover each transistor, the capacitor 203, and the like.
  • the insulating layer 214 functions as a planarization layer.
  • the insulating layers 212, 213, and 214 are provided to cover the transistors and the like is described here; however, one embodiment of the present invention is not limited to this example, and four or more insulating layers, a single insulating layer, or two insulating layers may be provided.
  • the insulating layer 214 functioning as a planarization layer is not necessarily provided when not needed.
  • the insulating layer 215 is provided to cover an end portion of the pixel electrode 111, a contact portion which electrically connects the pixel electrode 111 and the transistor 205, and the like.
  • the insulating layer 215 functions as a planarization layer.
  • the transistor 201, the transistor 202, and the transistor 205 each include the conductive layer 221 part of which functions as a gate, the conductive layer 222 part of which functions as a source electrode and a drain electrode, and the semiconductor layer 231.
  • the conductive layer 221 part of which functions as a gate the conductive layer 222 part of which functions as a source electrode and a drain electrode, and the semiconductor layer 231.
  • a plurality of layers obtained by processing the same conductive film are shown with the same hatching pattern.
  • the capacitor 203 includes part of the conductive layer 221 functioning as a gate electrode of the transistor 205, part of the insulating layer 211, and part of the conductive layer 222 functioning as a source electrode and a drain electrode of the transistor
  • one of the pair of conductive layers 222 which is not electrically connected to the capacitor 203 functions as part of a signal line.
  • the conductive layer 221 functioning as a gate electrode of the transistor 202 also functions as part of a scan line.
  • FIG. 35 illustrates an example where the wiring 23 is formed by processing the same conductive film as the conductive layer 222 and the wiring 24 is formed by processing the same conductive film as the conductive layer 221.
  • FIG. 35 illustrates a cross section of one sub-pixel as an example of the display portion 32.
  • the sub-pixel includes, for example, the transistor 202, the capacitor 203, the transistor 205, the light-emitting element 40, and the coloring layer 131.
  • the coloring layers 131 are selectively formed so that a sub-pixel exhibiting a red color, a sub-pixel exhibiting a green color, and a sub-pixel exhibiting a blue color are arranged; thus, full-color display can be achieved.
  • the pixel circuit (sub-pixel circuit) includes the transistor 202, the capacitor 203, the transistor 205, the pixel electrode 111, a wiring, and the like.
  • the transistors 201, 202, and 205 each include one gate electrode in FIG. 35, the semiconductor layer 231 where a channel is formed may be provided between two gate electrodes.
  • the pixel electrode 111 is provided over the insulating layer 214.
  • the pixel electrode 111 is electrically connected to one of a source and a drain of the transistor 205 through an opening formed in the insulating layer 214, the insulating layer 213, the insulating layer 212, and the like.
  • the other of the source and the drain of the transistor 205 is electrically connected to the capacitor 203.
  • the coloring layer 131 is provided over the insulating layer 213.
  • the coloring layer 131 is provided over the insulating layer 213.
  • the insulating layer 214 functioning as a planarization layer is provided to cover the coloring layer 131.
  • the coloring layer 131 is preferably covered with the insulating layer 214 because a surface of the pixel electrode 111 can be almost flat.
  • the pixel electrode 111 has a function of transmitting visible light and the common electrode 103 has a function of reflecting visible light.
  • a bottom-emission light-emitting element in which light is emitted to the substrate 21 side which supports the light-emitting element 40 can be provided.
  • both of the pixel electrode 111 and the common electrode 103 have a function of transmitting visible light to obtain a dual-emission light-emitting element.
  • a light-emitting element exhibiting a white color can be preferably used as the light-emitting element 40.
  • the light-emitting elements 40 do not need to be separately fabricated in respective sub-pixels; accordingly, an extremely high definition touch panel can be provided.
  • an extremely high definition touch panel can be provided.
  • light from the light-emitting element 40 passes through the coloring layer 131, light out of a specific wavelength range is absorbed by the coloring layer 131. Consequently, red light is extracted, for example.
  • polarizing plate 130 a circularly polarizing plate is preferably used.
  • the substrate 21 side functions as the display surface side as illustrated in FIG. 35
  • the wiring 23 and the wiring 24 included in the touch sensor reflect external light and the reflected light is visually recognized in some cases. In this case, reflection can be suppressed with a circularly polarizing plate used as the polarizing plate 130.
  • FIG. 36 illustrates a cross-sectional structure example of the touch panel module 10 with a hollow sealing structure.
  • the adhesive layer 141 does not cover the light-emitting element 40 and is provided in a peripheral portion of the substrate 31. There is a space 142 between the common electrode 103 and the substrate 31.
  • the space 142 may be filled with air, preferably an inert gas such as a rare gas or a nitrogen gas.
  • an inert gas such as a rare gas or a nitrogen gas.
  • a dry agent 143 is provided between the substrate 31 and the common electrode 103.
  • the dry agent 143 can be provided without an increase in thickness of the touch panel module 10.
  • drying agent 143 for example, a substance which adsorbs moisture by chemical adsorption, such as an oxide of an alkaline earth metal (e.g., a calcium oxide or a barium oxide), can be used.
  • a substance that adsorbs moisture by physical adsorption such as zeolite or silica gel, may be used.
  • FIG. 37 illustrates an example where the coloring layer 131 is formed over a different substrate.
  • the coloring layer 131 and the light-blocking layer 132 are formed over a substrate 161.
  • the substrate 161 is attached to the substrate 21 with an adhesive layer 251.
  • the coloring layer 131 is provided to overlap with at least the light-emitting element 40.
  • the light-blocking layer 132 is provided to overlap with the wiring 23, the wiring 24, the transistor 202, the transistor 205, the capacitor 203, the transistor 201, and the like.
  • the light-blocking layer 132 has a function of blocking visible light.
  • Such a structure can suppress reflection of external light by the wiring 23, the wiring 24, or the like and improve contrast even when the substrate 21 side functions as the display surface side.
  • the substrate 161 can also be used as a protective substrate for protecting the substrate 21 and the like.
  • a protective layer (such as a ceramic coat) is preferably provided over the substrate.
  • the protective layer can be formed using an inorganic insulating material such as silicon oxide, aluminum oxide, yttrium oxide, or yttria-stabilized zirconia (YSZ).
  • tempered glass may be used for the substrate.
  • the tempered glass which can be used here is one that has been subjected to physical or chemical treatment by an ion exchange method, a thermal tempering method, or the like and has a surface to which compressive stress has been added.
  • FIG. 38 illustrates an example where the coloring layer 131 and the light-blocking layer
  • a substrate 162 may be provided with the adhesive layer 251 to protect the coloring layer 131 and the light-blocking layer 132.
  • FIG. 39 illustrates an example of a cross-sectional structure in which the light-emitting elements 40 are fabricated in respective sub-pixels.
  • the EL layer 102 in FIG. 39 has an island-shaped top surface.
  • the EL layers 102 can be formed in respective sub-pixels in the example in FIG. 39, the light-emitting element 40 in one sub-pixel can exhibit a color different from that exhibited by a light-emitting element in an adjacent sub-pixel. Consequently, full-color display can be performed without the coloring layer 131.
  • FIG. 40 illustrates an example of a top-emission light-emitting element.
  • the light-emitting element 40 in FIG. 40 emits light to the substrate 31 side. Therefore, the substrate 31 side functions both as the display surface side and as the touch surface side.
  • the polarizing plate 130 is positioned on an outer surface of the substrate 31.
  • the pixel electrode 111 of the light-emitting element 40 has a function of reflecting visible light.
  • the common electrode 103 has a function of blocking visible light.
  • the substrate 31 is provided with the coloring layer 131, the light-blocking layer 132, and the like. [0309]
  • the spacer 124 is provided on the substrate 31 side.
  • the spacer 124 has a function of adjusting the distance between the substrate 21 and the substrate 31. There is a gap between the spacer 124 and the common electrode 103 or the insulating layer 215 in FIG. 40; however, the spacer 124 may be in contact with the common electrode 103 or the insulating layer 215.
  • the spacer 124 is provided on the substrate 31 side in the structure described here, the spacer 124 may be provided on the substrate 21 side (e.g., over the insulating layer 215).
  • a particulate spacer may be used instead of the spacer 124.
  • a material such as silica can be used for the particulate spacer, an elastic material such as an organic resin or rubber is preferably used. In some cases, the particulate spacer may be vertically crushed.
  • the pixel electrode 111 can be provided to cover the transistor 202, the transistor 205, the capacitor 203, and the like.
  • the aperture ratio of the pixel can be preferably increased.
  • the common electrode 103 includes an opening.
  • the opening is provided to overlap with the wiring 23 and the wiring 24.
  • a region where a conductive layer which could be supplied with a predetermined potential is not positioned is preferably provided between the touch surface and the wiring 23 or the wiring 24.
  • a change in capacitance between the wiring 23 and the wiring 24 can be increased by operation such as touch because an electric field from the wiring 23 or the wiring 24 is not blocked by the conductive layer, and accordingly, detection sensitivity can be increased.
  • a region where the EL layer 102 is not provided is preferably provided in a position overlapping with the wiring 23 and the wiring 24.
  • the EL layer 102 is provided so that an end portion of the EL layer 102 is also covered with the common electrode 103, the EL layer 102 is not exposed, so that high reliability can be achieved.
  • the light-blocking layer 132 preferably has an insulating property.
  • the light-blocking layer 132 overlapping with the wiring 23 or the wiring 24 has an insulating property, an electric field from the wiring 23 or the wiring 24 is prevented from being blocked by the light-blocking layer 132, so that detection sensitivity can be increased.
  • FIG. 41 illustrates a cross-sectional structure example of the touch panel module 10 in which a substrate 171 and a substrate 172 which have flexibility are used as a pair of substrates. Part of a display surface of the touch panel module 10 in FIG. 41 is bendable.
  • the substrate 171, the adhesive layer 251, and an insulating layer 216 are provided instead of the substrate 21. Furthermore, the substrate 172 is provided instead of the substrate 31.
  • the conductive layer 221 and the insulating layer 211 are provided on one surface of the insulating layer 216.
  • the substrate 171 is attached to the opposite surface of the insulating layer 216 with the adhesive layer 251.
  • the substrate 171 and the substrate 172 can each be formed using a flexible material. Note that the substrate 171 and the substrate 172 may each have a function of a protective layer for protecting a surface of the touch panel module 10. The substrate 171 and the substrate 172 do not necessarily have a function of supporting the transistors, the light-emitting element, a wiring, or the like.
  • the insulating layer 216 preferably has a function of suppressing diffusion of impurities such as water or hydrogen.
  • the insulating layer 217 is provided to cover the common electrode 103.
  • the insulating layer 217 has a function of suppressing diffusion of impurities such as water into the common electrode 103, the EL layer 102, or the like.
  • the common electrode 103 be provided to cover an end portion of the EL layer 102 and the insulating layer 217 be provided to cover an end portion of the common electrode 103 as illustrated in FIG. 41.
  • the common electrode 103 or the EL layer 102 can be more effectively suppressed.
  • the touch panel module 10 in FIG. 41 has a structure in which each transistor and the light-emitting element 40 are sandwiched between the insulating layer 216 and the insulating layer 217.
  • the insulating layer 216 and the insulating layer 217 positioned further inward (closer to each transistor or the light-emitting element 40) than these components can suppress impurity diffusion, so that reliability can be increased.
  • FIG. 42 illustrates an example where a top-emission light-emitting element is used as the light-emitting element 40.
  • an insulating layer 218, an adhesive layer 252, and the substrate 172 are provided instead of the substrate 31 in FIG. 40.
  • the substrate 171, the adhesive layer 251, and the insulating layer 216 are provided instead of the substrate 21.
  • the coloring layer 131, the light-blocking layer 132, the spacer 124, and the like are provided on one surface of the insulating layer 218.
  • the substrate 172 is attached to the opposite surface of the insulating layer 218 with the adhesive layer 252.
  • a material through which impurities such as water do not easily diffuse is preferably used for the insulating layer 218 as in the case of the insulating layer 216.
  • the touch panel module 10 can have high reliability.
  • an element layer includes a display element, for example, and may include a wiring electrically connected to a display element or an element such as a transistor used in a pixel or a circuit in addition to the display element.
  • a support body e.g., the substrate 171 or the substrate 172 in FIG. 41 and FIG. 42
  • a substrate e.g., the substrate 171 or the substrate 172 in FIG. 41 and FIG. 42
  • a substrate e.g., the substrate 171 or the substrate 172 in FIG. 41 and FIG. 42
  • an element layer As a method for forming an element layer over a flexible substrate provided with an insulating surface, there are a method in which an element layer is formed directly over a substrate, and a method in which an element layer is formed over a supporting base material that is different from the substrate and then the element layer is separated from the supporting base material and transferred to the substrate.
  • the element layer be formed directly over the substrate, in which case a manufacturing process can be simplified.
  • the element layer is preferably formed in a state where the substrate is fixed to a supporting base material, in which case transfer thereof in an apparatus and between apparatuses can be easy.
  • the element layer is formed over the supporting base material and then transferred to the substrate.
  • a separation layer and an insulating layer are stacked over the supporting base material, and then the element layer is formed over the insulating layer.
  • the element layer is separated from the supporting base material and then transferred to the substrate.
  • selected is a material with which separation at an interface between the supporting base material and the separation layer, at an interface between the separation layer and the insulating layer, or in the separation layer occurs.
  • a stacked layer of a layer including a high-melting-point metal material, such as tungsten, and a layer including an oxide of the metal material be used as the separation layer, and a stacked layer of a plurality of layers, such as a silicon nitride layer, a silicon oxynitride layer, and a silicon nitride oxide layer be used as the insulating layer over the separation layer.
  • a high-melting-point metal material such as tungsten
  • a layer including an oxide of the metal material be used as the separation layer
  • a stacked layer of a plurality of layers such as a silicon nitride layer, a silicon oxynitride layer, and a silicon nitride oxide layer be used as the insulating layer over the separation layer.
  • the use of the high-melting-point metal material is preferable because the degree of freedom of the process for forming the element layer can be increased.
  • the separation may be performed by application of mechanical power, by etching of the separation layer, by dripping of a liquid into part of the separation interface to penetrate the entire separation interface, or the like.
  • separation may be performed by heating the separation interface by utilizing a difference in thermal expansion coefficient.
  • the separation layer is not necessarily provided in the case where separation can occur at an interface between the supporting base material and the insulating layer.
  • glass and an organic resin such as polyimide can be used as the supporting base material and the insulating layer, respectively.
  • a separation trigger may be formed by locally heating part of the organic resin with laser light or the like, or by physically cutting part of or making a hole through the organic resin with a sharp tool, for example, so that separation may be performed at an interface between the glass and the insulating layer.
  • a metal layer may be provided between the supporting base material and the insulating layer formed of an organic resin, and separation may be performed at the interface between the metal layer and the insulating layer formed of an organic resin by heating the metal layer by feeding current to the metal layer.
  • a layer of a light-absorbing material e.g., a metal, a semiconductor, or an insulator
  • the insulating layer formed of an organic resin can be used as a substrate.
  • a first separation layer and the insulating layer 216 are formed in this order over a first supporting base material, and then components in a layer over the first separation layer and the insulating layer 216 are formed.
  • the first supporting base material and the substrate 172 are attached to each other with the adhesive layer 141.
  • separation at an interface between the first separation layer and the insulating layer 216 is conducted so that the first supporting base material and the first separation layer are removed, and then the substrate 171 is attached to the insulating layer 216 with the adhesive layer 251.
  • a first separation layer and the insulating layer 216 are formed in this order over a first supporting base material, and then components in a layer over the first separation layer and the insulating layer 216 are formed.
  • a second separation layer and the insulating layer 218 are formed in this order over a second supporting base material, and then components in a layer over the second separation layer and the insulating layer 218 are formed.
  • the first supporting base material and the second supporting base material are attached to each other with the adhesive layer 141.
  • separation at an interface between the second separation layer and the insulating layer 218 is conducted so that the second supporting base material and the second separation layer are removed, and then the substrate 172 is attached to the insulating layer 218 with the adhesive layer 252. Furthermore, separation at an interface between the first separation layer and the insulating layer 216 is conducted so that the first supporting base material and the first separation layer are removed, and then the substrate 171 is attached to the insulating layer 216 with the adhesive layer 251. Note that either side may be subjected to separation and attachment first.
  • a substrate having a flat surface can be used as the substrate included in the touch panel.
  • the substrate on the side from which light from the display element is extracted is formed using a material that transmits the light.
  • a material such as glass, quartz, ceramics, sapphire, or an organic resin can be used.
  • the weight and thickness of the touch panel can be decreased by using a thin substrate.
  • a flexible touch panel can be obtained by using a substrate that is thin enough to have flexibility.
  • non-alkali glass barium borosilicate glass, aluminoborosilicate glass, or the like can be used.
  • a metal substrate or the like can be used in addition to the above-mentioned substrates.
  • a metal material and an alloy material, which have high thermal conductivity, are preferable because they can easily conduct heat to the whole substrate and accordingly can prevent a local temperature rise in the touch panel.
  • the thickness of a metal substrate is preferably greater than or equal to 10 ⁇ and less than or equal to 200 ⁇ , more preferably greater than or equal to 20 ⁇ and less than or equal to 50 ⁇ .
  • a material of a metal substrate it is favorable to use, for example, a metal such as aluminum, copper, and nickel, an aluminum alloy, or an alloy such as stainless steel.
  • a substrate subjected to insulation treatment e.g., a metal substrate whose surface is oxidized or provided with an insulating film.
  • An insulating film may be formed by, for example, a coating method such as a spin-coating method and a dipping method, an electrodeposition method, an evaporation method, or a sputtering method.
  • An oxide film may be formed over the substrate surface by a known method such as an anodic oxidation method, exposing to or heating in an oxygen atmosphere, or the like.
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), a polyacrylonitrile resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamide imide resin, a polyvinyl chloride resin, and a polytetrafluoroethylene (PTFE).
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PES polyethersulfone
  • a material with a low thermal expansion coefficient for example, a material with a thermal expansion coefficient lower than or equal to 30 x 10 ⁇ 6 /K, such as a polyamide imide resin, a polyimide resin, or PET.
  • a substrate in which a fibrous body is impregnated with a resin (also referred to as prepreg) or a substrate whose thermal expansion coefficient is reduced by mixing an inorganic filler with an organic resin can also be used.
  • a substrate using such a material is lightweight, and thus a touch panel using this substrate can also be lightweight.
  • a high-strength fiber of an organic compound or an inorganic compound is used as the fibrous body.
  • the high-strength fiber is specifically a fiber with a high tensile elastic modulus or a fiber with a high Young's modulus.
  • Typical examples thereof include a polyvinyl alcohol based fiber, a polyester based fiber, a polyamide based fiber, a polyethylene based fiber, an aramid based fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.
  • glass fiber glass fiber using E glass, S glass, D glass, Q glass, or the like can be used.
  • These fibers may be used in a state of a woven fabric or a nonwoven fabric, and a structure body in which this fibrous body is impregnated with a resin and the resin is cured may be used as the flexible substrate.
  • the structure body including the fibrous body and the resin is preferably used as the flexible substrate, in which case the reliability against bending or breaking due to local pressure can be increased.
  • a hard coat layer e.g., a silicon nitride layer
  • a layer e.g., an aramid resin layer
  • an insulating film with low water permeability may be stacked over the flexible substrate.
  • an inorganic insulating material such as silicon nitride, silicon oxynitride, aluminum oxide, or aluminum nitride can be used.
  • the substrate may be formed by stacking a plurality of layers.
  • a barrier property against water and oxygen can be improved and thus a highly reliable touch panel can be provided.
  • glass, metal, or the like that is thin enough to have flexibility can be used as the substrate.
  • a composite material where glass and a resin material are attached to each other may be used.
  • a substrate in which a glass layer, an adhesive layer, and an organic resin layer are stacked from the side closer to the display element can be used, for example.
  • the thickness of the glass layer is greater than or equal to 20 ⁇ and less than or equal to 200 ⁇ , preferably greater than or equal to 25 ⁇ and less than or equal to 100 ⁇ . With such a thickness, the glass layer can have both a high barrier property against water and oxygen and high flexibility.
  • the thickness of the organic resin layer is greater than or equal to 10 ⁇ and less than or equal to 200 ⁇ , preferably greater than or equal to 20 ⁇ and less than or equal to 50 ⁇ . Providing such an organic resin layer, occurrence of a crack or a break in the glass layer can be suppressed and mechanical strength can be improved. With the substrate that includes such a composite material of a glass material and an organic resin, a highly reliable flexible touch panel can be provided.
  • the transistor includes a conductive layer functioning as the gate electrode, the semiconductor layer, a conductive layer functioning as the source electrode, a conductive layer functioning as the drain electrode, and an insulating layer functioning as the gate insulating layer.
  • a bottom-gate transistor is used.
  • the structure of the transistor included in the touch panel of one embodiment of the present invention there is no particular limitation on the structure of the transistor included in the touch panel of one embodiment of the present invention.
  • a planar transistor, a staggered transistor, or an inverted staggered transistor may be used.
  • a top-gate transistor or a bottom-gate transistor may be used.
  • Gate electrodes may be provided above and below a channel.
  • crystallinity of a semiconductor material used for the transistors there is no particular limitation on the crystallinity of a semiconductor material used for the transistors, and an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, or a semiconductor partly including crystal regions) may be used. It is preferable that a semiconductor having crystallinity be used, in which case deterioration of the transistor characteristics can be suppressed.
  • an element of Group 14 e.g., silicon or germanium
  • a compound semiconductor e.g., germanium
  • an oxide semiconductor e.g., germanium
  • a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.
  • an oxide semiconductor having a wider band gap than silicon is preferably used.
  • a semiconductor material having a wider band gap and a lower carrier density than silicon is preferably used because off-state leakage current of the transistor can be reduced.
  • an oxide semiconductor film also referred to as CAAC-OS (a c-axis aligned crystalline oxide semiconductor or a c-axis aligned and a-b-plane anchored crystalline oxide semiconductor)
  • CAAC-OS a c-axis aligned crystalline oxide semiconductor or a c-axis aligned and a-b-plane anchored crystalline oxide semiconductor
  • CAAC-OS a c-axis aligned crystalline oxide semiconductor or a c-axis aligned and a-b-plane anchored crystalline oxide semiconductor
  • Such an oxide semiconductor can be preferably used for a flexible touch panel which is used in a bent state, or the like.
  • a transistor with an oxide semiconductor whose band gap is larger than the band gap of silicon can hold charges stored in a capacitor that is series-connected to the transistor for a long time, owing to the low off-state current of the transistor.
  • operation of a driver circuit can be stopped while a gray scale of each pixel is maintained. As a result, a display device with extremely low power consumption can be obtained.
  • the semiconductor layer preferably includes, for example, a film represented by an In- -Zn oxide that contains at least indium, zinc, and M (a metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium).
  • M a metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium.
  • the oxide semiconductor preferably contains a stabilizer in addition to indium, zinc, and
  • the stabilizer including metals that can be used as , are gallium, tin, hafnium, aluminum, and zirconium.
  • lanthanoid such as lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium can be given.
  • any of the following can be used, for example: an In-Ga-Zn-based oxide, an In-Al-Zn-based oxide, an In-Sn-Zn-based oxide, an In-Hf-Zn-based oxide, an In-La-Zn-based oxide, an In-Ce-Zn-based oxide, an In-Pr-Zn-based oxide, an In-Nd-Zn-based oxide, an In-Sm-Zn-based oxide, an In-Eu-Zn-based oxide, an In-Gd-Zn-based oxide, an In-Tb-Zn-based oxide, an In-Dy-Zn-based oxide, an In-Ho-Zn-based oxide, an In-Er-Zn-based oxide, an In-Tm-Zn-based oxide, an In-Yb-Zn-based oxide, an In-Lu-Zn-based oxide, an In-Sn-Ga-Zn-based oxide, an In-Hf-
  • an "In-Ga-Zn-based oxide” means an oxide containing In
  • the In-Ga-Zn-based oxide may contain another metal element in addition to In, Ga, and Zn.
  • the semiconductor layer and the conductive layer may include the same metal elements contained in the above oxides.
  • the use of the same metal elements for the semiconductor layer and the conductive layer can reduce the manufacturing cost. For example, when metal oxide targets with the same metal composition are used, the manufacturing cost can be reduced, and the same etching gas or the same etchant can be used in processing the semiconductor layer and the conductive layer. Note that even when the semiconductor layer and the conductive layer include the same metal elements, they have different compositions in some cases. For example, a metal element in a film is released during the manufacturing process of the transistor and the capacitor, which might result in different metal compositions.
  • the proportions of In and M when the summation of In and M is assumed to be 100 atomic% are preferably as follows: the atomic percentage of In is higher than 25 atomic% and the atomic percentage of M is lower than 75 atomic%, more preferably, the atomic percentage of In is higher than 34 atomic% and the atomic percentage of Mis lower than 66 atomic%.
  • the energy gap of the semiconductor layer is 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more. With the use of an oxide semiconductor having such a wide energy gap, the off-state current of the transistor can be reduced.
  • the thickness of the semiconductor layer is greater than or equal to 3 nm and less than or equal to 200 nm, preferably greater than or equal to 3 nm and less than or equal to 100 nm, more preferably greater than or equal to 3 nm and less than or equal to 50 nm.
  • the semiconductor layer contains an In-M-Zn oxide
  • the atomic ratio of metal elements of a sputtering target used for forming a film of the In-M-Zn oxide satisfy In > M and Zn > M.
  • the atomic ratio of metal elements in the formed semiconductor layer varies from the above atomic ratio of metal elements of the sputtering target within a range of ⁇ 40 % as an error.
  • the semiconductor layer is an oxide semiconductor film whose carrier density is lower than or equal to 1 x 10 17 /cm 3 , preferably lower than or equal to 1 x 10 15 /cm 3 , more preferably lower than or equal to 1 x 10 13 /cm 3 , still more preferably lower than or equal to 1 x 10 u /cm 3 .
  • Such an oxide semiconductor is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
  • the oxide semiconductor has low impurity concentration and a low density of defect states and can thus be referred to as an oxide semiconductor having stable characteristics.
  • a material with an appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics (e.g., field-effect mobility and threshold voltage) of a transistor.
  • the carrier density, the impurity concentration, the defect density, the atomic ratio between a metal element and oxygen, the interatomic distance, the density, and the like of the semiconductor layer be set to appropriate values.
  • the concentration of silicon or carbon (measured by secondary ion mass spectrometry) in the semiconductor layer is lower than or equal to 2 x 10 18 atoms/cm 3 , preferably lower than or equal to 2 x 10 17 atoms/cm 3 .
  • the concentration of alkali metal or alkaline earth metal of the semiconductor layer which is measured by secondary ion mass spectrometry, is lower than or equal to 1 x 10 18 atoms/cm 3 , preferably lower than or equal to 2 x 10 16 atoms/cm 3 .
  • the concentration of nitrogen which is measured by secondary ion mass spectrometry is preferably set to lower than or equal to 5 x 10 18 atoms/cm 3 .
  • the semiconductor layer may have a non-single-crystal structure, for example.
  • the non-single-crystal structure includes CAAC-OS, a polycrystalline structure, a microcrystalline structure, or an amorphous structure, for example.
  • an amorphous structure has the highest density of defect states
  • CAAC-OS has the lowest density of defect states.
  • the semiconductor layer may have an amorphous structure, for example.
  • An oxide semiconductor film having an amorphous structure has disordered atomic arrangement and no crystalline component, for example.
  • an oxide film having an amorphous structure has, for example, an absolutely amorphous structure and no crystal part.
  • the semiconductor layer may be a mixed film including two or more of the following: a region having an amorphous structure, a region having a microcrystalline structure, a region having a polycrystalline structure, a region of CAAC-OS, and a region having a single-crystal structure.
  • the mixed film has, for example, a single-layer structure or a stacked-layer structure including two or more of the above regions in some cases.
  • silicon is preferably used as a semiconductor in which a channel of a transistor is formed.
  • amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferable.
  • microcrystalline silicon, polycrystalline silicon, single-crystal silicon, or the like is preferably used.
  • polycrystalline silicon can be formed at a lower temperature than single-crystal silicon and has higher field effect mobility and higher reliability than amorphous silicon.
  • the aperture ratio of the pixel can be improved. Even in the case of a high-definition display panel, a gate driver circuit and a source driver circuit can be formed over a substrate over which the pixels are formed, and the number of components of an electronic device can be reduced.
  • the bottom-gate transistor described in this embodiment is preferable because the number of manufacturing steps can be reduced.
  • amorphous silicon which can be formed at a lower temperature than polycrystalline silicon, is used for the semiconductor layer, materials with low heat resistance can be used for a wiring, an electrode, or a substrate below the semiconductor layer, so that the range of choices of materials can be widened. For example, an extremely large glass substrate can be favorably used.
  • the top-gate transistor described in this embodiment is preferable because an impurity region is easily formed in a self-aligned manner and variation in characteristics can be reduced. In that case, the use of polycrystalline silicon, single-crystal silicon, or the like is particularly preferable.
  • any of metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, or an alloy containing any of these metals as its main component can be used.
  • a single-layer structure or multi-layer structure including a film containing any of these materials can be used.
  • the following structures can be given: a single-layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is stacked over a titanium film, a two-layer structure in which an aluminum film is stacked over a tungsten film, a two-layer structure in which a copper film is stacked over a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is stacked over a titanium film, a two-layer structure in which a copper film is stacked over a tungsten film, a three-layer structure in which a titanium film or a titanium nitride film, an aluminum film or a copper film, and a titanium film or a titanium nitride film are stacked in this order, and a three-layer structure in which a molybdenum film or a molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or a molybdenum nitrid
  • a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added, or graphene can be used.
  • a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing any of these metal materials can be used.
  • a nitride of the metal material e.g., titanium nitride
  • the thickness is set small enough to be able to transmit light.
  • a stack of any of the above materials can be used as the conductive layer.
  • a stacked film of indium tin oxide and an alloy of silver and magnesium is preferably used because the conductivity can be increased. They can also be used for conductive layers such as a variety of wirings and electrodes included in a touch panel, and an electrode (e.g., a pixel electrode or a common electrode) included in a display element.
  • Examples of an insulating material that can be used for the insulating layers, the overcoat, the spacer, and the like include a resin such as acrylic or epoxy resin, a resin having a siloxane bond, and an inorganic insulating material such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, or aluminum oxide.
  • the light-emitting element is preferably provided between a pair of insulating films with low water permeability, in which case impurities such as water can be prevented from entering the light-emitting element. Thus, a decrease in device reliability can be prevented.
  • a film containing nitrogen and silicon e.g., a silicon nitride film or a silicon nitride oxide film
  • a film containing nitrogen and aluminum e.g., an aluminum nitride film
  • a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like can be used.
  • the water vapor transmittance of the insulating film with low water permeability is lower than or equal to 1 x 10 ⁇ 5 [g/m 2 -day], preferably lower than or equal to 1 x 10 ⁇ 6 [g/m 2 -day], further preferably lower than or equal to 1 x 10 ⁇ 7 [g/m 2 -day], still further preferably lower than or equal to 1 x 10 ⁇ 8 [g/m 2 -day].
  • a self-luminous element can be used, and an element whose luminance is controlled by current or voltage is included in the category of the light-emitting element.
  • a light-emitting diode (LED), an organic EL element, an inorganic EL element, or the like can be used.
  • the light-emitting element may be a top emission, bottom emission, or dual emission light-emitting element.
  • a conductive film that transmits visible light is used as the electrode through which light is extracted.
  • a conductive film that reflects visible light is preferably used as the electrode through which light is not extracted.
  • the EL layer includes at least a light-emitting layer.
  • the EL layer may further include one or more layers containing any of a substance with a high hole-injection property, a substance with a high hole-transport property, a hole-blocking material, a substance with a high electron-transport property, a substance with a high electron-injection property, a substance with a bipolar property (a substance with a high electron- and hole-transport property), and the like.
  • Either a low molecular compound or a high molecular compound can be used for the EL layer, and an inorganic compound may also be used.
  • the layers included in the EL layer can be formed by any of the following methods: an evaporation method (including a vacuum evaporation method), a transfer method, a printing method, an inkjet method, a coating method, and the like.
  • the EL layer preferably contains two or more kinds of light-emitting substances.
  • light-emitting substances are selected so that two or more light-emitting substances emit complementary colors to obtain white light emission.
  • the light-emitting element preferably emits light with a spectrum having two or more peaks in the wavelength range of a visible light region (e.g., 350 nm to 750 nm).
  • An emission spectrum of a material emitting light having a peak in the wavelength range of a yellow light preferably includes spectral components also in the wavelength range of a green light and a red light.
  • a light-emitting layer containing a light-emitting material emitting light of one color and a light-emitting layer containing a light-emitting material emitting light of another color are preferably stacked in the EL layer.
  • the plurality of light-emitting layers in the EL layer may be stacked in contact with each other or may be stacked with a region not including any light-emitting material therebetween.
  • a region containing the same material as one in the fluorescent layer or phosphorescent layer for example, a host material or an assist material
  • no light-emitting element may be provided. This facilitates the manufacture of the light-emitting element and reduces the drive voltage.
  • the light-emitting element may be a single element including one EL layer or a tandem element in which a plurality of EL layers are stacked with a charge generation layer therebetween.
  • the conductive film that transmits visible light can be formed using, for example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added.
  • a film of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium; an alloy containing any of these metal materials; or a nitride of any of these metal materials (e.g., titanium nitride) can be used when formed thin so as to have a light-transmitting property.
  • a stack of any of the above materials can be used as the conductive layer.
  • a stacked film of indium tin oxide and an alloy of silver and magnesium is preferably used, in which case conductivity can be increased.
  • graphene or the like may be used.
  • a metal material such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium or an alloy including any of these metal materials can be used.
  • Lanthanum, neodymium, germanium, or the like may be added to the metal material or the alloy.
  • an alloy containing aluminum such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, or an alloy of aluminum and neodymium may be used.
  • an alloy containing silver such as an alloy of silver and copper, an alloy of silver and palladium, or an alloy of silver and magnesium may be used.
  • An alloy of silver and copper is preferable because of its high heat resistance. Furthermore, when a metal film or a metal oxide film is stacked in contact with an aluminum film or an aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. Examples of a material for the metal film or the metal oxide film are titanium, titanium oxide, and the like. Alternatively, the conductive film having a property of transmitting visible light and a film containing any of the above metal materials may be stacked. For example, a stack of silver and indium tin oxide, a stack of an alloy of silver and magnesium and indium tin oxide, or the like can be used.
  • the electrodes may be formed separately by an evaporation method or a sputtering method.
  • a discharging method such as an inkjet method, a printing method such as a screen printing method, or a plating method may be used.
  • a variety of curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, an anaerobic adhesive, and a photo curable adhesive such as an ultraviolet curable adhesive can be used.
  • these adhesives include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a polyimide resin, an imide resin, a polyvinyl chloride (PVC) resin, a polyvinyl butyral (PVB) resin, and an ethylene vinyl acetate (EVA) resin.
  • a material with low moisture permeability such as an epoxy resin, is preferred.
  • a two-component-mixture-type resin may be used.
  • an adhesive sheet or the like may be used.
  • the resin may include a drying agent.
  • a substance that adsorbs water by chemical adsorption such as oxide of an alkaline earth metal (e.g., calcium oxide or barium oxide)
  • an alkaline earth metal e.g., calcium oxide or barium oxide
  • a substance that adsorbs water by physical adsorption such as zeolite or silica gel
  • the drying agent is preferably included because it can prevent impurities such as water from entering the element, thereby improving the reliability of the display panel.
  • a filler with a high refractive index or light-scattering member into the resin, in which case light extraction efficiency can be enhanced.
  • a filler with a high refractive index or light-scattering member into the resin, in which case light extraction efficiency can be enhanced.
  • titanium oxide, barium oxide, zeolite, zirconium, or the like can be used.
  • connection layers an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • a material that can be used for the coloring layers a metal material, a resin material, and a resin material containing a pigment or dye can be given.
  • a material that can be used for the light-blocking layer carbon black, a metal oxide, and a composite oxide containing a solid solution of a plurality of metal oxides can be given.
  • Stacked films containing the material of the coloring layer can also be used for the light-blocking layer.
  • a stacked-layer structure of a film containing a material of a coloring layer which transmits light of a certain color and a film containing a material of a coloring layer which transmits light of another color can be employed. It is preferable that the coloring layer and the light-blocking layer be formed using the same material because the same manufacturing apparatus can be used and the process can be simplified.
  • CAC-OS cloud aligned complementary oxide semiconductor
  • the CAC refers to, for example, a composition of a material in which elements included in an oxide semiconductor are unevenly distributed.
  • the material including unevenly distributed elements has a size of greater than or equal to 0.5 nm and less than or equal to 10 nm, preferably greater than or equal to 1 nm and less than or equal to 2 nm, or a similar size.
  • a state in which one or more metal elements are unevenly distributed and regions including the metal element(s) are mixed is referred to as a mosaic pattern or a patch-like pattern.
  • the region has a size of greater than or equal to 0.5 nm and less than or equal to 10 nm, preferably greater than or equal to 1 nm and less than or equal to 2 nm, or a similar size.
  • CAC-IGZO has a composition in which materials are separated into indium oxide ( ⁇ , where XI is a real number greater than 0) or indium zinc oxide ( ⁇ ⁇ 2 ⁇ ⁇ 2 0 ⁇ 2, where X2, Y2, and 22 are real numbers greater than 0), and gallium oxide (GaOxj, where X3 is a real number greater than 0), gallium zinc oxide (Ga ⁇ Zn ⁇ Oz , where X4, Y4, and 24 are real numbers greater than 0), or the like, and a mosaic pattern is formed. Then, ⁇ and ⁇ 2 ⁇ 72 ⁇ forming the mosaic pattern are evenly distributed in the film.
  • This composition is also referred to as a cloud-like composition.
  • the CAC-IGZO is a composite oxide semiconductor with a composition in which a region including GaOx as a main component and a region including ⁇ 2 ⁇ 72 ⁇ 2 or ⁇ ! as a main component are mixed. Note that in this specification, for example, when the atomic ratio of In to an element M in a first region is greater than the atomic ratio of In to an element M in a second region, the first region has higher In concentration than the second region.
  • IGZO a compound including In, Ga, Zn, and O
  • Typical examples of IGZO include a crystalline compound represented by InGa03(ZnO) m i ⁇ ml is a natural number) and a crystalline compound represented by In ( i +x o)Ga(i- x o)03(ZnO) m o (-1 ⁇ x0 ⁇ 1; mO is a given number).
  • the above crystalline compounds have a single-crystal structure, a polycrystalline structure, or a CAAC structure.
  • the CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis alignment and are connected in the a-b plane direction without alignment.
  • the CAC relates to the material composition.
  • a CAC material including In, Ga, Zn, and O regions where nanoparticles including Ga as a main component are partly observed and regions where nanoparticles including In as a main component are partly observed are randomly dispersed to form a mosaic pattern. Therefore, the crystal structure is a secondary element for the CAC composition.
  • a stacked-layer structure including two or more films with different atomic ratios is not included.
  • a two-layer structure of a film including In as a main component and a film including Ga as a main component is not included.
  • a boundary between the region including GaO as a main component and the region including ⁇ ⁇ 2 ⁇ 2 ⁇ 2 or ⁇ as a main component is not clearly observed in some cases.
  • each sample includes a substrate and an oxide semiconductor over the substrate.
  • a glass substrate is used as the substrate.
  • a 100-nm-thick In-Ga-Zn oxide is formed as an oxide semiconductor with a sputtering apparatus.
  • the oxide target provided in the sputtering apparatus is supplied with an AC power of 2500 W.
  • the substrate temperature is set to a temperature that is not increased by intentional heating (hereinafter such a temperature is also referred to as R.T.), to 130 °C, and to 170 °C.
  • the ratio of a flow rate of an oxygen gas to a flow rate of a mixed gas of Ar and oxygen (also referred to as an oxygen gas flow rate ratio) is set to 10 %, 30 %, and 100 %.
  • results of X-ray diffraction (XRD) measurement performed on the nine samples are described.
  • XRD apparatus D8 ADVANCE manufactured by Bruker AXS is used. The conditions are as follows: scanning is performed by an out-of-plane method at ⁇ /2 ⁇ , the scanning range is 15 deg. to 50 deg., the step width is 0.02 deg., and the scanning speed is 3.0 deg./min.
  • FIG. 55 shows XRD spectra measured by an out-of-plane method.
  • the top row shows the measurement results of the samples formed at a substrate temperature of 170 °C;
  • the middle row shows the measurement results of the samples formed at a substrate temperature of 130 °C;
  • the bottom row shows the measurement results of the samples formed at a substrate temperature of R.T.
  • the left column shows the measurement results of the samples formed with an oxygen gas flow rate ratio of 10 %;
  • the middle column shows the measurement results of the samples formed with an oxygen gas flow rate ratio of 30 %;
  • the right column shows the measurement results of the samples formed with an oxygen gas flow rate ratio of 100 %.
  • the higher the substrate temperature at the time of formation is or the higher the oxygen gas flow rate ratio at the time of formation is, the higher the intensity of the peak at around 2 ⁇ 31° is.
  • This section describes the observation and analysis results of the samples formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10 % with a high-angle annular dark-field scanning transmission electron microscope (HAADF-STEM).
  • HAADF-STEM high-angle annular dark-field scanning transmission electron microscope
  • HAADF-STEM also referred to as plan-view TEM images and cross-sectional TEM images, respectively.
  • the TEM images are observed with a spherical aberration corrector function.
  • the HAADF-STEM images are obtained using an atomic resolution analytical electron microscope JEM-ARM200F manufactured by JEOL Ltd. under the following conditions: the acceleration voltage is 200 kV, and irradiation with an electron beam with a diameter of approximately 0.1 nm is performed.
  • FIG. 56A is a plan-view TEM image of the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10 %.
  • FIG. 56B is a cross-sectional TEM image of the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10 %.
  • This section describes electron diffraction patterns obtained by irradiation of the sample formed at a substrate temperature of R.T. and an oxygen gas flow rate ratio of 10 % with an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam).
  • Electron diffraction patterns of points indicated by black dots al, a2, a3, a4, and a5 in the plan-view TEM image in FIG. 56A of the sample formed at a substrate temperature of R.T. and an oxygen gas flow rate ratio of 10 % are observed. Note that the electron diffraction patterns are observed while electron beam irradiation is performed at a constant rate for 35 seconds.
  • FIGS. 56C, 56D, 56E, 56F, and 56G show the results of the points indicated by the black dots al, a2, a3, a4, and a5, respectively.
  • regions with high luminance in a circular (ring) pattern can be shown. Furthermore, a plurality of spots can be shown in a ring-like shape.
  • Electron diffraction patterns of points indicated by black dots bl, b2, b3, b4, and b5 in the cross-sectional TEM image in FIG. 56B of the sample formed at a substrate temperature of R.T. and an oxygen gas flow rate ratio of 10 % are observed.
  • FIGS. 56H, 561, 56J, 56K, and 56L show the results of the points indicated by the black dots bl, b2, b3, b4, and b5, respectively.
  • FIGS. 56H, 561, 56J, 56K, and 56L regions with high luminance in a ring pattern can be shown. Furthermore, a plurality of spots can be shown in a ring-like shape.
  • a diffraction pattern including a spot derived from the (009) plane of the InGaZn0 4 crystal is obtained. That is, the CAAC-OS has c-axis alignment and the c-axes are aligned in the direction substantially perpendicular to the formation surface or the top surface of the CAAC-OS. Meanwhile, a ring-like diffraction pattern is shown when an electron beam with a probe diameter of 300 nm is incident on the same sample in a direction perpendicular to the sample surface. That is, it is found that the CAAC-OS has neither a-axis alignment nor b-axis alignment.
  • a diffraction pattern like a halo pattern is observed when an oxide semiconductor including a nanocrystal (a nanocrystalline oxide semiconductor (nc-OS)) is subjected to electron diffraction using an electron beam with a large probe diameter (e.g., 50 nm or larger).
  • a large probe diameter e.g. 50 nm or larger
  • bright spots are shown in a nanobeam electron diffraction pattern of the nc-OS obtained using an electron beam with a small probe diameter (e.g., smaller than 50 nm).
  • regions with high luminance in a circular (ring) pattern are shown in some cases.
  • a plurality of bright spots are shown in a ring-like shape in some cases.
  • the electron diffraction pattern of the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10 % has regions with high luminance in a ring pattern and a plurality of bright spots appear in the ring-like pattern. Accordingly, the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10 % exhibits an electron diffraction pattern similar to that of the nc-OS and does not show alignment in the plane direction and the cross-sectional direction.
  • an oxide semiconductor formed at a low substrate temperature or with a low oxygen gas flow rate ratio is likely to have characteristics distinctly different from those of an oxide semiconductor film having an amorphous structure and an oxide semiconductor film having a single crystal structure.
  • This section describes the analysis results of elements included in the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10 %.
  • EDX energy dispersive X-ray spectroscopy
  • An energy dispersive X-ray spectrometer Analysis Station JED-2300T manufactured by JEOL Ltd. is used as an elementary analysis apparatus in the EDX measurement.
  • a Si drift detector is used to detect an X-ray emitted from the sample.
  • an EDX spectrum of a point is obtained in such a manner that electron beam irradiation is performed on the point in a detection target region of a sample, and the energy of characteristic X-ray of the sample generated by the irradiation and its frequency are measured.
  • peaks of an EDX spectrum of the point are attributed to electron transition to the L shell in an In atom, electron transition to the K shell in a Ga atom, and electron transition to the K shell in a Zn atom and the K shell in an O atom, and the proportions of the atoms in the point are calculated.
  • An EDX mapping image indicating distributions of proportions of atoms can be obtained through the process in an analysis target region of a sample.
  • FIGS. 57A to 57C show EDX mapping images in a cross section of the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10 %.
  • FIG. 57A shows an EDX mapping image of Ga atoms. The proportion of the Ga atoms in all the atoms is
  • FIG. 57B shows an EDX mapping image of In atoms. The proportion of the In atoms in all the atoms is 9.28 atomic% to 33.74 atomic%.
  • FIG. 57C shows an EDX mapping image of Zn atoms. The proportion of the Zn atoms in all the atoms is 6.69 atomic% to 24.99 atomic%.
  • FIGS. 57A to 57C show the same region in the cross section of the sample formed at a substrate temperature of R.T. and with an oxygen flow rate ratio of 10 %.
  • the proportion of an element is indicated by grayscale: the more measured atoms exist in a region, the brighter the region is; the less measured atoms exist in a region, the darker the region is.
  • the magnification of the EDX mapping images in FIGS. 57A to 57C is 7200000 times.
  • the EDX mapping images in FIGS. 57A to 57C show relative distribution of brightness indicating that each element has a distribution in the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10 %. Areas surrounded by solid lines and areas surrounded by dashed lines in FIGS. 57A to 57C are examined.
  • a relatively dark region occupies a large area in the area surrounded by the solid line, while a relatively bight region occupies a large area in the area surrounded by the dashed line.
  • a relatively bight region occupies a large area in the area surrounded by the solid line, while a relatively dark region occupies a large area in the area surrounded by the dashed line.
  • the areas surrounded by the solid lines are regions including a relatively large number of In atoms and the areas surrounded by the dashed lines are regions including a relatively small number of In atoms.
  • the right portion of the area surrounded by the solid line is relatively bright and the left portion thereof is relatively dark.
  • the area surrounded by the solid line is a region including ⁇ ⁇ 2 ⁇ ⁇ 2 0 ⁇ 2, ⁇ , and the like as main components.
  • the area surrounded by the solid line is a region including a relatively small number of Ga atoms and the area surrounded by the dashed line is a region including a relatively large number of Ga atoms.
  • the upper left portion of the area surrounded by the dashed line is relatively bright and the lower right portion thereof is relatively dark.
  • the area surrounded by the dashed line is a region including GaOxj, Gax 4 Z Y4 0z 4 , and the like as main components.
  • the In atoms are relatively more uniformly distributed than the Ga atoms, and regions including InOxi as a main component is seemingly joined to each other through a region including ⁇ ⁇ 2 ⁇ 2 ⁇ 2 as a main component.
  • the regions including ⁇ ⁇ 2 ⁇ ⁇ 2 0 ⁇ 2 and InOxi as main components extend like a cloud.
  • CAC-IGZO In-Ga-Zn oxide having a composition in which the regions including GaOx ? as a main component and the regions including ⁇ ⁇ 2 ⁇ 2 ⁇ 2 or ⁇ as a main component are unevenly distributed and mixed.
  • the crystal structure of CAC-IGZO includes an nc structure.
  • an electron diffraction pattern of the CAC-IGZO with the nc structure several or more bright spots appear in addition to bright sports derived from IGZO including a single crystal, a poly crystal, or a CAAC.
  • the crystal structure is defined as having high luminance regions appearing in a ring pattern.
  • each of the regions including GaOx? as a main component and the regions including Inx 2 Zny 2 0z or InOxi as a main component has a size of greater than or equal to 0.5 nm and less than or equal to 10 nm, or greater than or equal to 1 nm and less than or equal to 3 nm. Note that it is preferable that a diameter of a region including each metal element as a main component be greater than or equal to 1 nm and less than or equal to 2 nm in the EDX mapping images.
  • CAC-IGZO has a structure different from that of an IGZO compound in which metal elements are evenly distributed, and has characteristics different from those of the IGZO compound. That is, in CAC-IGZO, regions including GaOx or the like as a main component and regions including ⁇ 2 ⁇ 72 ⁇ or ⁇ as a main component are separated to form a mosaic pattern. Accordingly, when CAC-IGZO is used for a semiconductor element, the property derived from GaOxj or the like and the property derived from Inx 2 Zny 2 0z 2 or InOxi complement each other, whereby high on-state current (Ion) and high field-effect mobility ( ⁇ ) can be achieved.
  • Ion on-state current
  • ⁇ field-effect mobility
  • a semiconductor element including CAC-IGZO has high reliability.
  • CAC-IGZO is suitably used in a variety of semiconductor devices typified by a display.
  • FIG. 43A is a block diagram illustrating the structure of a mutual capacitive touch sensor.
  • FIG. 43 A illustrates a pulse voltage output circuit 601 and a current sensing circuit 602. Note that in FIG. 43 A, six wirings XI to X6 represent electrodes 621 to which a pulse voltage is applied, and six wirings Yl to Y6 represent electrodes 622 that sense changes in current. The number of such electrodes is not limited to those illustrated in this example.
  • FIG. 43A also illustrates a capacitor 603 that is formed with the electrodes 621 and 622 overlapping with each other or being provided close to each other. Note that functional replacement between the electrodes 621 and 622 is possible.
  • the wiring 23 described in Embodiment 1 corresponds to one of the electrode 621 and the electrode 622
  • the wiring 24 described in Embodiment 1 corresponds to the other of the electrode 621 and the electrode 622.
  • the pulse voltage output circuit 601 is, for example, a circuit for sequentially inputting a pulse voltage to the wirings XI to X6.
  • the current sensing circuit 602 is a circuit for sensing current flowing through each of the wirings Y1-Y6, for example.

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