WO2015174347A1 - レーザアニール装置、レーザアニール処理用連続搬送路、レーザ光照射手段およびレーザアニール処理方法 - Google Patents

レーザアニール装置、レーザアニール処理用連続搬送路、レーザ光照射手段およびレーザアニール処理方法 Download PDF

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WO2015174347A1
WO2015174347A1 PCT/JP2015/063344 JP2015063344W WO2015174347A1 WO 2015174347 A1 WO2015174347 A1 WO 2015174347A1 JP 2015063344 W JP2015063344 W JP 2015063344W WO 2015174347 A1 WO2015174347 A1 WO 2015174347A1
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Prior art keywords
conveyance path
processed
continuous
carry
laser
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PCT/JP2015/063344
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English (en)
French (fr)
Japanese (ja)
Inventor
貞夫 谷川
澤井　美喜
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株式会社日本製鋼所
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Application filed by 株式会社日本製鋼所 filed Critical 株式会社日本製鋼所
Priority to KR1020157034732A priority Critical patent/KR102337428B1/ko
Priority to JP2016519233A priority patent/JP6560198B2/ja
Priority to CN201580003126.7A priority patent/CN105830201A/zh
Priority to TW104114881A priority patent/TWI692811B/zh
Publication of WO2015174347A1 publication Critical patent/WO2015174347A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Definitions

  • the present invention relates to a laser annealing apparatus for irradiating an object to be processed with laser light to perform annealing, a continuous conveying path for laser annealing, laser light irradiation means, and a laser annealing method.
  • annealing treatment of the object to be processed for example, an amorphous semiconductor provided on a silicon substrate or a glass substrate is crystallized by irradiating laser light, or a polycrystalline semiconductor is irradiated with laser light to be single-crystallized, Annealing treatment is performed to irradiate a semiconductor with a laser beam for modification or to activate or stabilize impurities.
  • the purpose of the annealing treatment is not limited to the above, and includes all treatments in which heat treatment is performed by irradiating the target object with laser light.
  • a stage 31 is disposed in the processing chamber 30 so as to be able to reciprocate along the scanning direction (X-axis direction), as shown in FIG.
  • the stage 31 can move in the X direction by floating movement with nitrogen gas.
  • the inside of the processing chamber 30 is adjusted to a nitrogen gas atmosphere during the process, and the laser irradiation position has a seal portion 34 that blows out and shields nitrogen gas with a lower oxygen concentration around the object to be processed.
  • a plate-like object 100 in which a semiconductor film is formed on a substrate is prepared near the processing chamber 30, and a gate provided in the processing chamber 30.
  • the stage 31 is moved to the side 35, the workpiece 100 is carried into the processing chamber 30 through the gate 35, and the workpiece 100 is placed on the stage 31. Thereafter, the gate 35 is closed to maintain the inside of the processing chamber 30 in a nitrogen gas atmosphere.
  • the object to be processed 100 is moved, and the semiconductor film of the object to be processed 100 is irradiated with the laser beam 42, so that the object 100 is irradiated while relatively scanning the laser beam 42.
  • Annealing there is a type in which the processability of the workpiece 100 is improved by rotating the stage 31 in a direction orthogonal to the X-axis (Y-axis direction) or rotating the stage 31 ( ⁇ -axis rotation).
  • the stage 31 is returned to the loading position, the gate 35 is opened, and the target object 100 subjected to the annealing process is taken out from the processing chamber 30 and moved to a predetermined position. .
  • a new target object 100 that has not been annealed is prepared in the vicinity of the processing chamber 30, and the same processing as described above is repeated.
  • Patent Document 1 an apparatus in which a carry-in gate and a carry-out gate are provided on opposite walls of the processing chamber is also known (for example, Patent Document 1).
  • the semiconductor substrate that has been annealed can be taken out from the gate for unloading.
  • the stage is moved to the loading side, and a new object to be processed is loaded from the gate on the loading side.
  • one object to be processed is carried into the apparatus from the carry-in port, and is carried out from the carry-out port (in most cases, the same as the carry-in port) after the annealing treatment ( Batch processing).
  • the annealing treatment of the object to be processed is performed as a batch process for each object to be processed. This is due to the fact that the object to be processed is moved together with the movement of the stage holding the object to be processed, and is determined by the structure of the apparatus. In this case, completion of processing of the object to be processed including loading / unloading is a condition for starting processing of the next object to be processed. Therefore, the time required for loading and unloading and the time for transporting through the apparatus are required for each object to be processed.
  • the loading / unloading time / transport time is not related to the process, and is required to be reduced as much as possible from the viewpoint of improving the tact time.
  • the loading / unloading time / transporting time varies depending on the apparatus, it is several tens of seconds or more, which takes a fraction of the time required for the process time, which causes a reduction in production efficiency.
  • the present invention has been made in the context of the above circumstances, and a laser annealing apparatus, a laser annealing process continuous conveyance path, and a laser beam irradiation means that can increase production efficiency by minimizing time other than process processing time as much as possible. It is another object of the present invention to provide a laser annealing method.
  • the first aspect of the present invention is a laser annealing apparatus for performing an annealing process by irradiating an object to be processed with laser light.
  • a continuous conveyance path for continuously conveying the object to be processed in a certain direction;
  • a laser beam irradiation means for irradiating the object to be processed conveyed on the continuous conveyance path with the laser beam.
  • an annealing process can be performed by irradiating a laser beam to the object to be processed that is conveyed by the continuous conveyance path.
  • the processed object to be processed can be carried out without causing any trouble in the carrying-in work of the next object to be processed.
  • a laser annealing apparatus is the processing chamber according to the first aspect of the present invention, wherein the processing chamber is irradiated with the laser light, and the inlet provided in the processing chamber on the upstream side of the continuous conveyance path. And a carry-out port provided in the processing chamber located downstream of the continuous transfer path, wherein the continuous transfer path is located from the carry-in port to the carry-out port.
  • the object to be processed can be continuously conveyed by the continuous conveyance path in the processing chamber independent of the carry-in and carry-out, the stable support of the object to be treated becomes easy, and good annealing properties can be ensured. .
  • the continuous conveyance path is an irradiation region in which the object to be processed is conveyed while the object to be processed is irradiated with the laser beam.
  • carrying-in and carrying-out operations can be performed without being restricted by the carrying speed during the process by carrying out the conveyance other than the annealing process at a higher speed, and the workability is improved.
  • the laser annealing apparatus of the fourth aspect of the present invention is characterized in that, in the third aspect of the present invention, the carry-in / out conveyance path has a variable conveyance speed.
  • the carry-in / out conveyance path can be conveyed at least at the same conveyance speed as the irradiation area conveyance path and a conveyance speed larger than the conveyance speed. It is characterized by
  • a laser annealing apparatus is the laser annealing apparatus according to any one of the first to fifth aspects, wherein the continuous transport path is supported by the support means for supporting the object to be processed, and the support means. And a moving means for moving the object to be processed along the transport direction.
  • the means for supporting the object to be processed and the means for moving the object to be processed separately it becomes easy to ensure stable support and flatness of the object to be processed at the time of continuous conveyance, The depth of focus when the laser beam is irradiated is appropriately maintained, and good annealing can be ensured.
  • the laser annealing apparatus is characterized in that, in the sixth aspect of the present invention, the support means is a gas levitation means for levitating and supporting the object to be processed by blowing the gas upward.
  • the attitude of the semiconductor substrate can be easily controlled, and the semiconductor substrate can be moved without impairing the stable holding of the semiconductor substrate.
  • the laser annealing apparatus of the eighth aspect of the present invention is characterized in that, in the seventh aspect of the present invention, the gas levitation means uses an inert gas as the gas.
  • the effect of maintaining the irradiation area of the object to be processed in an inert atmosphere by the blown inert gas can be increased along with the gas floating of the object to be processed.
  • the laser annealing apparatus of the ninth aspect of the present invention is the laser annealing apparatus according to any one of the sixth to eighth aspects of the present invention, wherein the moving means transports the workpiece to the downstream side of the continuous transport path and then the continuous transport. It is possible to return to the upstream side of the road.
  • the moving means can return and move so that the object to be processed can be continuously conveyed. At this time, by making the return movement of the moving means larger than the conveyance speed of the objects to be processed, the interval between the objects to be processed can be reduced and the production efficiency can be improved.
  • the return movement of the moving means may be returned by moving in an annular shape, or may be moved by reciprocating movement, and the movement form is not particularly limited.
  • a laser annealing apparatus is the laser annealing apparatus according to any one of the first to ninth aspects of the present invention, wherein the local region covers at least a surface region of the object to be processed that is irradiated with the laser light in the continuous conveyance path. It has the local gas seal part which injects gas, It is characterized by the above-mentioned.
  • the laser annealing apparatus of the eleventh aspect of the present invention is characterized in that, in the tenth aspect of the present invention, the local gas is an inert gas.
  • the area irradiated with the laser light or the surrounding area can be placed in a clean environment, and environmental control over the entire processing chamber is facilitated.
  • the laser annealing apparatus of the twelfth aspect of the present invention is characterized in that, in the tenth or eleventh aspect of the present invention, the atmosphere excluding the local gas is air.
  • the atmosphere can be adjusted easily and inexpensively.
  • the continuous transport path for laser annealing treatment of the thirteenth aspect of the present invention is a continuous transport path for performing laser annealing while continuously transporting the object to be processed in a certain direction,
  • a carry-in conveyance path that is a part of the continuous conveyance path and carries the object to be processed to the upstream side of the continuous conveyance path;
  • An irradiation region that is part of the continuous conveyance path and performs annealing by irradiating the object to be processed with laser light while conveying the object to be processed that has passed through the carry-in conveyance path on the downstream side of the carry-in conveyance path A transport path;
  • It is a part of the continuous conveyance path, and has a carry-out conveyance path for carrying out the object to be processed that has undergone the annealing process on the downstream side of the irradiation area conveyance path.
  • the continuous annealing path for laser annealing treatment according to the fourteenth aspect of the present invention is configured such that the conveyance speed in the carry-in conveyance path and the carry-out conveyance path is greater than the conveyance speed in the irradiation area conveyance path.
  • the object to be processed can be conveyed.
  • the continuous annealing path for laser annealing is the continuous conveying path at least in the irradiation area conveying path, wherein the object to be processed is blown upwardly from the gas. It is characterized by being moved along the conveying direction while floating.
  • the laser beam irradiation means of the sixteenth aspect of the present invention comprises a laser beam source for outputting a laser beam, and a laser beam applied to an object to be processed which is continuously conveyed by a continuous conveyance path and reaches an irradiation region of the continuous conveyance path. And an optical system member that emits light while relatively scanning.
  • a laser annealing method comprising: annealing an object by irradiating the object to be processed with a laser beam while the object to be processed is conveyed by a continuous conveyance path that conveys the object to be treated continuously in a certain direction.
  • a laser annealing method for performing A carry-in conveyance step for carrying in and carrying the object to be processed on a part of the continuous conveyance path and upstream of the continuous conveyance path;
  • An annealing process step of performing an annealing process by irradiating the laser beam while transporting the object to be processed on the downstream side of the continuous transport path that is a part of the continuous transport path and the carry-in transport process is performed.
  • An unloading / conveying step of unloading the object to be processed while being part of the continuous conveying path and downstream of the continuous conveying path on which the annealing treatment has been performed.
  • the conveyance speed of the continuous conveyance path in the carry-in conveyance process and the carry-out conveyance process is set to the conveyance speed of the continuous conveyance path in the annealing treatment process. It is characterized in that it can be conveyed at a speed higher than the speed.
  • the laser annealing method according to the seventeenth or eighteenth aspect of the present invention, wherein at least in the annealing step, the object to be processed is conveyed by being blown upward by a gas. It moves along a direction, It is characterized by the above-mentioned.
  • the time other than the annealing process of the object to be processed can be minimized as much as possible, and the productivity can be greatly improved.
  • FIG. 1 shows an outline of a laser annealing apparatus.
  • FIG. 1A shows an enlarged view of a processing chamber, and
  • FIG. 1B shows an outline of the entire system.
  • an object to be processed 100 is a target object to be processed in which a semiconductor film is formed on a glass substrate.
  • the processing chamber 1 has a rectangular parallelepiped-shaped wall portion, and is provided with a carry-in port 1 a (the left side in the drawing) and a carry-out port 1 b (the right side in the drawing) on opposing walls in the longitudinal direction. .
  • the carry-in port 1a and the carry-out port 1b may be opened, or may be configured to be openable and closable. As a structure that can be opened and closed, a simple sealing structure can be used. Note that the carry-in port and the carry-out port are not limited to specific ones as long as the carry-in port and the carry-out port are provided along a certain conveyance direction of the continuous conveyance path.
  • a continuous conveyance path 2 is provided from the inside of the carry-in port 1a to the inside of the carry-out 1b.
  • a gas levitation device 20 is disposed in the continuous conveyance path 2.
  • the gas levitation device 20 jets gas from below to above and supports the object 100 to be levitated above, and corresponds to the gas levitation means, that is, the support means of the present invention.
  • the gas levitation device 20 can adjust the posture, deflection, and the like of the workpiece 100 by having a plurality of ejection positions (not shown).
  • guides 28 and 29 are arranged along the longitudinal direction on both sides of the gas levitation device 20, and the guides 28 and 29 have slide portions that can move along the guides. 21 and 25 are provided.
  • the slide parts 21 and 25 can change the moving speed according to their positions.
  • a plurality of elevating parts 22 and 26 that can be vertically adjusted by changing their positions in the longitudinal direction are provided.
  • each of the slide parts 21 and 25 has two lift parts 22 and 22 and lift parts 26 and 26, respectively.
  • the plurality of elevating units 22 and 22 or elevating units 26 and 26 may be configured to adjust the support state of the workpiece 100 by changing the ascending positions.
  • Adsorption parts 23 and 27 are provided on the elevating parts 22 and 26, and the object 100 that is levitated by the gas levitation device 20 is adsorbed.
  • the guide 28, the slide part 21, the lifting part 22, the suction part 23 and guide 29, the slide part 25, the lifting part 26, and the suction part 27 cooperate to constitute the moving means of the present invention.
  • the gas levitation device 20, the guide 28, the slide unit 21, the lifting unit 22, the suction unit 23 and the guide 29, the slide unit 25, the lifting unit 26, and the suction unit 27 constitute the continuous conveyance path 2 of the present invention. Yes.
  • the continuous conveyance path 2 is described as being provided over the processing chamber 1.
  • the continuous conveyance path 2 may be extended outside the processing chamber 1.
  • the processing chamber 1 is not essential as the present invention.
  • a laser light source 40 that outputs laser light is provided outside the processing chamber 1.
  • the type of laser light is not particularly limited, and may be either continuous wave or pulse wave.
  • An optical system member 41 composed of a mirror, a lens, and the like is disposed in the optical path of the laser beam.
  • a laser beam 42 having a line beam shape is introduced into the processing chamber 1 and is on the continuous conveyance path 2.
  • the object 100 to be processed is irradiated.
  • the laser light source 40 and the optical system member 41 constitute the laser light irradiation means of the present invention.
  • the leading end in the conveyance direction of the object to be processed 100 reaches the irradiation position of the laser light 42, and the rear end in the conveyance direction of the object to be processed 100 leaves the irradiation position of the laser light 42.
  • the irradiation area conveyance path 2b Up to the position immediately before is the irradiation area, and as shown in FIG. 1, a part of the continuous conveyance path 2 during this period constitutes the irradiation area conveyance path 2b.
  • a part of the continuous conveyance path 2 on the upstream side of the irradiation area conveyance path 2b constitutes a carry-in conveyance path 2a
  • a part of the continuous conveyance path 2 on the downstream side of the irradiation area conveyance path 2b constitutes a carry-out conveyance path 2c. is doing.
  • the boundary line on the left side in the drawing is based on the rear end side of the object to be processed 100
  • the boundary line on the right side in the drawing is based on the tip side of the object to be processed 100.
  • the irradiation area conveyance path includes at least the range of the above-described conveyance path, and a wider conveyance path range may be used as the irradiation area conveyance path.
  • the workpiece 100 In the irradiation region conveyance path 2b, the workpiece 100 needs to move at the conveyance speed in the process process, and the above-described moving unit moves at a conveyance speed corresponding to the scanning speed in the process process. In the case where the irradiation position of the laser beam 42 can be changed, the conveyance speed by the moving unit is determined so that the laser beam 42 moves relatively at the scanning speed including the irradiation position of the laser beam 42. . In the carry-in conveyance path 2a and the carry-out conveyance path 2c, the workpiece 100 can move faster than the irradiation area conveyance path 2b, and the moving means can be moved at a relatively high speed during this time.
  • the covered area in the same speed as the irradiation area conveyance path 2b.
  • the processing body 100 may be transported.
  • the laser annealing apparatus 1 is adjacent to a carry-in chamber 10 so as to communicate with the carry-in port 1a side of the processing chamber 1, and the interior of the carry-in chamber 10 can be sealed.
  • the cleaning chamber 12 in which a plurality of objects to be processed 100 before the annealing process are stored, the cleaning unit 12 that cleans the processing target 100 taken out from the storage chamber 11, and the cleaning unit 12 are cleaned. It has a loading device 13 capable of continuously loading the workpiece 100 into the processing chamber 1 through the loading port 1a at a predetermined interval.
  • the predetermined interval when carrying in the object 100 is not limited to a specific range as long as it does not overlap with the preceding object 100 and does not interfere with the carry-in. Further, the predetermined intervals may be different between the semiconductor substrates.
  • the accommodation method of the accommodation chamber 11 is not particularly limited as long as the object to be processed 100 can be accommodated by an appropriate method such as vertical placement or horizontal placement.
  • the cleaning unit may be either a batch type or a single wafer type, and the cleaning method may be wet cleaning, dry cleaning, or a combination thereof.
  • the unloading chamber 15 is adjacent to the unloading port 1b side of the processing chamber 1, and the interior of the unloading chamber 15 communicates with the unloading port 1b and can be sealed.
  • a carry-out device 14 for continuously taking out the workpiece 100 that has been annealed from the continuous conveyance path of the processing chamber 1 is installed.
  • the local gas seal part 3 which injects the local gas which covers a laser beam irradiation area
  • the local gas injection region can be set to an appropriate range on the assumption that at least the region irradiated with the laser beam is included.
  • an inert gas such as nitrogen gas is used as the local gas.
  • the laser beam 42 passes through the local gas seal portion 3 and is irradiated to the object 100 to be processed.
  • an inert gas for example, nitrogen gas, as the levitation gas at least in a range equivalent to the local gas seal portion 3. Outside this range, levitation gas may be used and inexpensive air may be used.
  • a plurality of objects to be processed 100 are accommodated in the accommodation chamber 11 and can be supplied.
  • the storage chamber 11 may be replenished with a new object 100 during the laser annealing process.
  • the objects to be processed 100a, 100b, and 100c are displayed in the order of loading in order to distinguish the objects to be sequentially loaded into the processing chamber.
  • the object to be processed 100 in the storage chamber 11 is cleaned in a wet or dry manner in a cleaning unit 12 by a batch type or a single wafer type.
  • the gas levitation device 20 prepares for gas injection or gas injection, and at least one of the slide portion 21 and the slide portion 25 is moved along the guide 28 or the guide 29 to the carry-in entrance 1 a side. Move it to.
  • the laser light source 40 outputs laser light, and the optical system member 41 generates a line beam.
  • the laser beam 42 is retracted to an appropriate location outside the processing chamber without irradiating the processing chamber 1 with a beam by a part of the optical system member 41.
  • the object 100 a cleaned by the cleaning unit 12 is carried into the processing chamber 1 from the carry-in entrance 1 a and is conveyed at a relatively high speed by the carry-in conveyance path 2 a of the continuous conveyance path 2.
  • the object to be processed 100 reaches the irradiation area of the laser beam 42, the object to be processed 100 is introduced into the processing chamber 1 while being conveyed at a predetermined conveyance speed (relatively low speed) by the irradiation area conveyance path 2b of the continuous conveyance path 2.
  • the laser beam 42 is irradiated on the surface.
  • the laser beam 42 is scanned relative to the object to be processed 100a, and a predetermined region of the object to be processed 100a is annealed.
  • the to-be-processed object 100 subjected to the annealing treatment passes through the irradiation region conveyance path 2b and is conveyed to the vicinity of the unloading port 1b at a relatively high speed by the unloading conveyance path 2c of the continuous conveyance path 2, and immediately the processing chamber 1 by the unloading device 14. Is carried out to the carry-out chamber 15.
  • the next object to be processed 100b is carried into the processing chamber 1 during the annealing process of the object to be processed 100a, and is conveyed at a high speed through the carry-in conveyance path 2a, and has a predetermined distance from the object to be processed 100a.
  • the irradiation area conveyance path 2b is reached.
  • the object 100b is annealed while being transported at a predetermined speed in the irradiation region transport path 2b as described above.
  • the annealing process is completed, similarly to the above, it is transported at a relatively high speed through the unloading / conveying path 2 c and is unloaded from the processing chamber 1 to the unloading chamber 15 by the unloading device 14.
  • a new semiconductor substrate can be carried into the processing chamber 1 and continuously processed in the same manner.
  • the elevating part 22 rises to an appropriate position, and the suction part 23 adsorbs the back side of the object to be processed 100 a.
  • the slide portion 21 moves to the carry-out port 1b side at a predetermined speed.
  • the movement speed is relatively high in the carry-in conveyance path 2a and the carry-out conveyance path 2c, and is relatively low in the irradiation area conveyance path 2b according to the scanning speed during the process.
  • the object to be processed 100a is irradiated while the laser beam 42 is relatively scanned in the irradiation area conveyance path 2b, and the necessary area of the object to be processed 100a is annealed.
  • the object to be processed 100a after being annealed is conveyed to the vicinity of the carry-out port 1b by the continuous conveyance path 2, the adsorption by the adsorption unit 23 is released and the elevating unit 22 is lowered.
  • the workpiece 100a is immediately carried out from the processing chamber 1 to the carry-out chamber 15 by the carry-out device 14 as described above.
  • the slide portion 21 returns to the initial position on the carry-in port 1a side along the guide 28 by reciprocating movement, and is used for holding the semiconductor substrate later.
  • the moving speed at the time of return movement is set to the next object to be processed by moving the object to be processed at a speed higher than the speed at which the object is conveyed.
  • the gas levitation device 20 levitates the air, and the elevation unit 26 on the slide unit 25 is appropriately raised.
  • the workpiece 100b is sucked from the back surface side by the suction portion 27 and put into a cantilever state.
  • the slide part 25 when the workpiece 100b is sucked by the suction part 27, the slide part 25 is moved toward the carry-out port 1b at a predetermined speed in the same manner as described above. As a result, the workpiece 100b moves along the continuous conveyance path 2 and is annealed by the laser light 42.
  • the to-be-processed object 100b is conveyed by the continuous conveyance path 2 to the vicinity of the carrying-out exit 1b, the adsorption
  • suction part 27 is cancelled
  • the slide portion 25 moves back and forth along the guide 29 to the initial position on the carry-in port 1a side, and is used to hold the object to be processed later.
  • the moving speed at the time of return movement is set to the next object to be processed by moving the object to be processed at a speed higher than the speed at which the object is conveyed.
  • the next object to be processed is carried into the processing chamber 1, it is adsorbed by the adsorption part 23 on the slide part 21 side and conveyed to the carry-out port 1b side.
  • the objects to be processed 100a and 100b can be continuously carried into the treatment chamber, and annealing treatment and carry-out treatment can be performed.
  • Each of the above operations can be controlled by a control unit (not shown), and the operation can be controlled by the control unit while synchronizing the carry-in device, the carry-out device, and the moving means.
  • the control unit can be configured by a CPU, a program for causing the CPU to execute a predetermined operation, a storage unit storing operation parameters, and the like.
  • the time required for loading and unloading a semiconductor substrate with respect to the annealing process is about 1/4 of the annealing process time.
  • productivity is improved by about 25% by reducing the time required for carry-in and carry-out to almost zero.
  • FIG. 6 shows the oscillation operation of the laser light source in the conventional apparatus.
  • the laser In laser oscillation, it is necessary to maintain a continuous oscillation state in order to operate stably. Therefore, the laser must continue to oscillate during times that do not contribute to production, such as transport time. For this reason, in the laser annealing apparatus, laser oscillation is continued, and the laser beam 42 is introduced into the processing chamber 1 through the optical system member when necessary.
  • the gas enclosed in the excimer laser or the like deteriorates depending on the number of times of laser oscillation, the gas must be periodically replaced.
  • FIG. 7 shows a time chart of the present embodiment, and shows an example of processing three substrates.
  • the semiconductor substrates are mostly carried out and carried in during the irradiation process of other semiconductor substrates. It is possible to increase the productivity by minimizing the dead time.
  • the case where the long width of the laser light has one side of the substrate has been described. Therefore, by moving the semiconductor substrate in one direction, the annealing process can be completed by relatively scanning the laser beam.
  • the laser beam length may not reach one side of the substrate.
  • the case where the laser beam length is 1 ⁇ 2 side length of the substrate will be described with reference to FIG.
  • a continuous transfer path 200a for transferring a semiconductor substrate in one direction and a continuous transfer path 200b for transferring a semiconductor substrate in the opposite direction are arranged in parallel.
  • a carry-in port 1a is provided on the upstream side of the continuous conveyance path 200a in the conveyance direction.
  • the upstream side in the transport direction of the continuous transport path 200b is located on the downstream side in the transport direction of the continuous transport path 200a, and the carry-out port 1b is located on the downstream side in the transport direction of the continuous transport path 200b.
  • the target objects 100a, 100b, 100c, and 100d are displayed in that order.
  • the laser beam 42a is irradiated on the left side with reference to the conveyance direction of the loaded object 100.
  • a local gas seal portion 3a for injecting and sealing nitrogen gas or the like around the irradiation region of the laser light 42a is provided.
  • the laser beam 42b is irradiated on the right side with reference to the conveyance direction of the loaded object 100.
  • a local gas seal portion 3b that seals the irradiation region of the laser beam 42b and its surroundings by jetting nitrogen gas or the like is provided.
  • the object to be processed 100a first carried into the carry-in port 1a by a carry-in device is conveyed by the continuous conveyance path 200a and locally by the local gas seal portion 3a, like the object to be processed 100d in the figure. While the gas is injected and sealed, the laser beam 42a is irradiated, and the left side in the transport direction is annealed.
  • the object to be processed 100a reaches the downstream end in the conveyance direction of the conveyance path 2a in the same manner as the object to be processed 100c in the figure, and is conveyed upstream in the conveyance direction of the continuous conveyance path 200b, similarly to the object to be processed 100b in the figure. Then, it is conveyed downstream by the continuous conveyance path 200b.
  • the object to be processed 100a conveyed through the continuous conveyance path 200b is irradiated with the laser beam 42b while being irradiated with the local gas by the local gas seal portion 3b and sealing the laser light irradiation region and its periphery.
  • the right side of the direction is annealed.
  • the necessary region of the workpiece 100a is annealed by the annealing process on the continuous conveyance path 200a and the annealing process on the continuous conveyance path 200b.
  • the workpiece 100a reaches the downstream end in the transport direction of the continuous transport path 200b, and is unloaded from the processing chamber 1 through the unloading device (not shown) through the unloading port 1b.
  • the objects to be processed 100b, 100c, and 100d are sequentially carried in and conveyed, and the annealing process is continuously performed. Even when the long laser beam width does not reach the length of one side of the semiconductor substrate, the annealing process can be performed over the entire width of the substrate. In addition, when the continuous conveyance path cannot process the length of one side of the substrate with two conveyance paths, the number of parallel movements of the continuous conveyance path can be increased to cope with the problem.
  • the continuous conveyance path 200a is passed to the continuous conveyance path 200b without changing the direction of the object to be processed, but the object may be conveyed with its direction changed.
  • the continuous conveyance path includes the gas levitation device over the entire length.
  • the present invention does not necessarily include the gas levitation device.
  • gas floating may be performed only in the irradiation region conveyance path 2b.
  • FIG. 9 shows the continuous conveyance path 2d of this embodiment.
  • idle rotation rollers 20a having a rotation axis in a direction orthogonal to the conveyance direction are arranged at intervals in the conveyance direction to enable support of the object to be processed. . Therefore, the rotating roller 20a constitutes the support means of the present invention.
  • the rotating roller 20a can be driven to rotate, but it is preferable to have the moving means described above separately.
  • the object to be processed carried into the carry-in conveyance path 2a is supported by the rotating roller 20a and moved in the conveyance direction by the moving means.
  • the object to be processed is supported by the gas levitation device 20 when it reaches the irradiation area conveyance path 2b, and thereafter, when it reaches the carry-out conveyance path 2c, it is supported by the rotating roller 20a and is moved by the moving means, like the carry-in conveyance path 2a. Be transported.
  • the support of the object to be processed is different from the support of the object to be processed in the irradiation region transport path 2b because the support and flatness other than the irradiation region transport path 2b are not required except for the irradiation region transport path 2b. You may make it support a to-be-processed object.

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PCT/JP2015/063344 2014-05-12 2015-05-08 レーザアニール装置、レーザアニール処理用連続搬送路、レーザ光照射手段およびレーザアニール処理方法 WO2015174347A1 (ja)

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KR1020157034732A KR102337428B1 (ko) 2014-05-12 2015-05-08 레이저 어닐 장치, 레이저 어닐 처리용 연속 반송로, 레이저광 조사 수단 및 레이저 어닐 처리 방법
JP2016519233A JP6560198B2 (ja) 2014-05-12 2015-05-08 レーザアニール装置、レーザアニール処理用連続搬送路およびレーザアニール処理方法
CN201580003126.7A CN105830201A (zh) 2014-05-12 2015-05-08 激光退火装置、激光退火处理用连续传送路径、激光照射单元以及激光退火处理方法
TW104114881A TWI692811B (zh) 2014-05-12 2015-05-11 雷射退火裝置、雷射退火處理用連續搬運路徑、雷射光照射手段以及雷射退火處理方法

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