WO2014184701A1 - Led with scattering features in substrate - Google Patents

Led with scattering features in substrate Download PDF

Info

Publication number
WO2014184701A1
WO2014184701A1 PCT/IB2014/061196 IB2014061196W WO2014184701A1 WO 2014184701 A1 WO2014184701 A1 WO 2014184701A1 IB 2014061196 W IB2014061196 W IB 2014061196W WO 2014184701 A1 WO2014184701 A1 WO 2014184701A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
light
areas
semiconductor layers
led semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2014/061196
Other languages
English (en)
French (fr)
Inventor
Kenneth JANSSEN
Hans-Helmut Bechtel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips GmbH
Koninklijke Philips NV
Original Assignee
Philips GmbH
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips GmbH, Koninklijke Philips NV filed Critical Philips GmbH
Priority to JP2016513467A priority Critical patent/JP6401248B2/ja
Priority to EP14726207.5A priority patent/EP2997606B1/en
Priority to CN201480040511.4A priority patent/CN105531833B/zh
Priority to KR1020157035361A priority patent/KR102222215B1/ko
Priority to US14/891,344 priority patent/US9508908B2/en
Publication of WO2014184701A1 publication Critical patent/WO2014184701A1/en
Anticipated expiration legal-status Critical
Priority to US15/335,354 priority patent/US9893253B2/en
Priority to US15/689,899 priority patent/US10074786B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • Fig. 5 illustrates how the LED structure of Fig. 4 may be formed. After the LED semiconductor layers are grown, the growth substrate is removed, and the substrate 57 is affixed to the top of the N-type layer 12. A thin layer of silicone may be used as the adhesive. The affixing may be performed under heat and pressure in a vacuum environment.
  • a phosphor layer 20 is then formed over the substrate 57.
  • the phosphor layer 20 may also be formed over the sides of the substrate 57 and the LED layers. In one

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
PCT/IB2014/061196 2013-05-15 2014-05-05 Led with scattering features in substrate Ceased WO2014184701A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2016513467A JP6401248B2 (ja) 2013-05-15 2014-05-05 基板内に散乱機構を有するｌｅｄ
EP14726207.5A EP2997606B1 (en) 2013-05-15 2014-05-05 Led with scattering features in substrate
CN201480040511.4A CN105531833B (zh) 2013-05-15 2014-05-05 具有衬底中的散射特征的led
KR1020157035361A KR102222215B1 (ko) 2013-05-15 2014-05-05 기판내에 산란 특징을 갖는 led
US14/891,344 US9508908B2 (en) 2013-05-15 2014-05-05 LED with scattering features in substrate
US15/335,354 US9893253B2 (en) 2013-05-15 2016-10-26 LED with scattering features in substrate
US15/689,899 US10074786B2 (en) 2013-05-15 2017-08-29 LED with scattering features in substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361823528P 2013-05-15 2013-05-15
US61/823,528 2013-05-15

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/891,344 A-371-Of-International US9508908B2 (en) 2013-05-15 2014-05-05 LED with scattering features in substrate
US15/335,354 Continuation US9893253B2 (en) 2013-05-15 2016-10-26 LED with scattering features in substrate

Publications (1)

Publication Number Publication Date
WO2014184701A1 true WO2014184701A1 (en) 2014-11-20

Family

ID=50792485

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2014/061196 Ceased WO2014184701A1 (en) 2013-05-15 2014-05-05 Led with scattering features in substrate

Country Status (7)

Country Link
US (3) US9508908B2 (https=)
EP (1) EP2997606B1 (https=)
JP (1) JP6401248B2 (https=)
KR (1) KR102222215B1 (https=)
CN (2) CN108198918B (https=)
TW (2) TWI641161B (https=)
WO (1) WO2014184701A1 (https=)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
US20160093782A1 (en) * 2013-05-15 2016-03-31 Koninklijke Philips N.V. Led with scattering features in substrate
EP3428975A1 (en) * 2017-07-14 2019-01-16 AGC Glass Europe Light-emitting devices having an antireflective silicon carbide or sapphire substrate and methods of forming the same
WO2022243352A1 (de) * 2021-05-20 2022-11-24 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement

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EP2997606B1 (en) 2016-07-13
US20170358722A1 (en) 2017-12-14
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US20170047492A1 (en) 2017-02-16
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JP6401248B2 (ja) 2018-10-10
US20160093782A1 (en) 2016-03-31
KR102222215B1 (ko) 2021-03-03
TW201743464A (zh) 2017-12-16
TWI641161B (zh) 2018-11-11
EP2997606A1 (en) 2016-03-23
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CN105531833A (zh) 2016-04-27
US9893253B2 (en) 2018-02-13
US10074786B2 (en) 2018-09-11

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